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Emergence of cellular nematic order is a conserved feature of gastrulation in animal embryos
Authors:
Xin Li,
Robert J. Huebner,
Margot L. K. Williams,
Jessica Sawyer,
Mark Peifer,
John B. Wallingford,
D. Thirumalai
Abstract:
Cells undergo dramatic changes in morphology during embryogenesis, yet how these changes affect the formation of ordered tissues remains elusive. Here we find that the emergence of a nematic liquid crystal phase occurs in cells during gastrulation in the development of embryos of fish, frogs, and fruit flies. Moreover, the spatial correlations in all three organisms are long-ranged and follow a si…
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Cells undergo dramatic changes in morphology during embryogenesis, yet how these changes affect the formation of ordered tissues remains elusive. Here we find that the emergence of a nematic liquid crystal phase occurs in cells during gastrulation in the development of embryos of fish, frogs, and fruit flies. Moreover, the spatial correlations in all three organisms are long-ranged and follow a similar power-law decay (y~$x^{-α}$ ) with $α$ less than unity for the nematic order parameter, suggesting a common underlying physical mechanism unifies events in these distantly related species. All three species exhibit similar propagation of the nematic phase, reminiscent of nucleation and growth phenomena. Finally, we use a theoretical model along with disruptions of cell adhesion and cell specification to characterize the minimal features required for formation of the nematic phase. Our results provide a framework for understanding a potentially universal features of metazoan embryogenesis and shed light on the advent of ordered structures during animal development.
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Submitted 16 July, 2024;
originally announced July 2024.
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Two-way photoeffect-like occupancy dynamics in a single (InGa)As quantum dot
Authors:
Pavel Sterin,
Kai Hühn,
Jens Hübner,
Michael Oestreich
Abstract:
We extend optical spin noise spectroscopy on single (InGa)As quantum dots to high magnetic fields at which the splitting between the two optical active Zeeman branches of the positively charged quantum dot trion transition is significantly larger than the homogeneous line width. Under such conditions, the typical theoretical approximations concerning the decoupling of spin and charge dynamics are…
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We extend optical spin noise spectroscopy on single (InGa)As quantum dots to high magnetic fields at which the splitting between the two optical active Zeeman branches of the positively charged quantum dot trion transition is significantly larger than the homogeneous line width. Under such conditions, the typical theoretical approximations concerning the decoupling of spin and charge dynamics are in general not valid anymore and the Kerr fluctuations show significantly richer detuning-dependent features in the spectral region between the two Zeeman branches. A comparison of the experimental data with an extended theory suggests that the typical Auger-recombination can be neglected at high magnetic fields in favour of a probe-laser induced photoeffect that shuffles not only the resident hole out of the quantum dot but also activates acceptor-bound holes which recharge the empty quantum dot.
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Submitted 17 February, 2023;
originally announced February 2023.
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Low Temperature Relaxation of Donor Bound Electron Spins in $^{28}$Si:P
Authors:
Eduard Sauter,
Nikolay V. Abrosimov,
Jens Hübner,
Michael Oestreich
Abstract:
We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped $^{28}$Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The $^{28}$Si:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T$^9$ dependence…
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We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped $^{28}$Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The $^{28}$Si:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T$^9$ dependence which dominates the spin relaxation between 2 and 4 K at low magnetic fields. The T$^7$ dependence reported for natural silicon is absent. At high magnetic fields, the spin relaxation is dominated by the magnetic field dependent single phonon spin relaxation process. This process is well documented for natural silicon at finite temperatures but the $^{28}$Si:P measurements validate additionally that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of $Γ$ as predicted by theory.
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Submitted 12 April, 2021;
originally announced April 2021.
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Hole-capture competition between a single quantum dot and an ionized acceptor
Authors:
Julia Wiegand,
Dmitry S. Smirnov,
Jakob Osberghaus,
Lida Abaspour,
Jens Hübner,
Michael Oestreich
Abstract:
We study the competition of hole capture between an In(Ga)As quantum dot and a directly adjacent ionized impurity in view of spin-photon interfaces. The Kerr rotation noise spectroscopy at 4.2 K shows that the hole-capture probability of the In(Ga)As quantum dot is about one order of magnitude higher compared to the hole-capture probability of the ionized impurity and suggests that a simultaneous…
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We study the competition of hole capture between an In(Ga)As quantum dot and a directly adjacent ionized impurity in view of spin-photon interfaces. The Kerr rotation noise spectroscopy at 4.2 K shows that the hole-capture probability of the In(Ga)As quantum dot is about one order of magnitude higher compared to the hole-capture probability of the ionized impurity and suggests that a simultaneous occupation of quantum dot and impurity by a hole is efficiently suppressed due to Coulomb interaction. A theoretical model of interconnected spin and charge noise allows the quantitative specification of all relevant time scales.
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Submitted 16 August, 2018;
originally announced August 2018.
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Optical amplification of spin noise spectroscopy via homodyne detection
Authors:
Pavel Sterin,
Julia Wiegand,
Jens Hübner,
Michael Oestreich
Abstract:
Spin noise (SN) spectroscopy measurements on delicate semiconductor spin systems, like single InGaAs quantum dots, are currently not limited by optical shot noise but rather by the electronic noise of the detection system. Here, we report a realization of homodyne SN spectroscopy enabling shot noise limited SN measurements. The proof-of-principle measurements on impurities in an isotopically enric…
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Spin noise (SN) spectroscopy measurements on delicate semiconductor spin systems, like single InGaAs quantum dots, are currently not limited by optical shot noise but rather by the electronic noise of the detection system. Here, we report a realization of homodyne SN spectroscopy enabling shot noise limited SN measurements. The proof-of-principle measurements on impurities in an isotopically enriched rubidium atom vapor show that homodyne SN spectroscopy can be utilized even in the low frequency spectrum which facilitates advanced semiconductor spin research like higher order SN measurements on spin qubits.
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Submitted 15 January, 2018;
originally announced January 2018.
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Spin and reoccupation noise in a single quantum dot beyond the fluctuation-dissipation theorem
Authors:
J. Wiegand,
D. S. Smirnov,
J. Hübner,
M. M. Glazov,
M. Oestreich
Abstract:
We report on the nonequilibrium spin noise of a single InGaAs quantum dot charged by a single hole under strong driving by a linearly polarized probe light field. The spectral dependency of the spin noise power evidences a homogeneous broadening and negligible charge fluctuations in the environment of the unbiased quantum dot. Full analysis of the spin noise spectra beyond the fluctuation-dissipat…
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We report on the nonequilibrium spin noise of a single InGaAs quantum dot charged by a single hole under strong driving by a linearly polarized probe light field. The spectral dependency of the spin noise power evidences a homogeneous broadening and negligible charge fluctuations in the environment of the unbiased quantum dot. Full analysis of the spin noise spectra beyond the fluctuation-dissipation theorem yields the heavy-hole spin dynamics as well as the trion spin dynamics. Moreover, the experiment reveals an additional much weaker noise contribution in the Kerr rotation noise spectra. This additional noise contribution has a maximum at the quantum dot resonance and shows a significantly longer correlation time. Magnetic-field-dependent measurements in combination with theoretical modeling prove that this additional noise contribution unveils a charge reoccupation noise which is intrinsic in naturally charged quantum dots.
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Submitted 15 February, 2018; v1 submitted 3 August, 2017;
originally announced August 2017.
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Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition
Authors:
J. G. Lonnemann,
E. P. Rugeramigabo,
M. Oestreich,
J. Hübner
Abstract:
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex contributions to the spin relaxation at the metal-to-insulator transition (MIT). Just below the MIT, the interplay between hopping induced loss of spin coherence and hy…
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We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex contributions to the spin relaxation at the metal-to-insulator transition (MIT). Just below the MIT, the interplay between hopping induced loss of spin coherence and hyperfine interaction yields a maximum spin lifetime exceeding 800~ns. At slightly higher doping concentrations, however, the spin relaxation deviates from the expected Dyakonov-Perel mechanism which is consistently explained by a reduction of the effective motional narrowing with increasing doping concentration. The reduction is attributed to the change of the dominant momentum scattering mechanism in the metallic impurity band where scattering by local conductivity domain boundaries due to the intrinsic random distribution of donors becomes significant. Here, we fully identify and model all intricate contributions of the relevant microscopic scattering mechanisms which allows the complete quantitative modeling of the electron spin relaxation in the entire regime from weakly interacting up to fully delocalized electrons.
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Submitted 2 June, 2017;
originally announced June 2017.
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Molecular Packing Motifs Determine Charge-Transfer and Carrier Dynamics in Molecular Heterosystems: the Case of Pentacene - Perfluoropentacene
Authors:
Andre Rinn,
Tobias Breuer,
Julia Wiegand,
Michael Beck,
Jens Hübner,
Michael Oestreich,
Wolfram Heimbrodt,
Gregor Witte,
Sangam Chatterjee
Abstract:
The great majority of electronic and optoelectronic devices depends on interfaces between n-type and p-type semiconductors. Finding such matching donor-acceptor systems in molecular crystals remains a challenging endeavor. Structurally compatible molecules may not necessarily be suitable with respect to their optical and electronic properties: large exciton binding energies may favor bound electro…
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The great majority of electronic and optoelectronic devices depends on interfaces between n-type and p-type semiconductors. Finding such matching donor-acceptor systems in molecular crystals remains a challenging endeavor. Structurally compatible molecules may not necessarily be suitable with respect to their optical and electronic properties: large exciton binding energies may favor bound electron-hole pairs rather than charge separation by exciton dissociation, and free, band-like transport is challenging to achieve as hopping commonly dominates charge motion. Structurally well-defined pentacene-perfluoropentacene heterostructures in different polymorphs and molecular orientations are model systems to study the relation of packing motif and optical properties. These heterosystems feature two characteristic interface-specific luminescence channels at around 1.4 and 1.5 eV. Their relative emission strength strongly depends on the molecular alignment of the respective donor and acceptor molecules. Evaluating their dynamics in comparison with the corresponding unitary films reveals the role of singlet-triplet intersystem crossing and different channels for carrier injection into the interface-specific resonances.
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Submitted 11 December, 2016;
originally announced December 2016.
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Interplay of Electron and Nuclear Spin Noise in GaAs
Authors:
Fabian Berski,
Jens Hübner,
Michael Oestreich,
Arne Ludwig,
A. D. Wieck,
Mikhail Glazov
Abstract:
We present spin noise (SN) measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over six orders of magnitude from milliseconds to nanoseconds. The SN spectra detected at the donor-bound exciton transition show the multifaceted dynamical regime of the ubiquitous mutual electron and nuclear spin interaction typical for III-V based semiconductor systems…
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We present spin noise (SN) measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over six orders of magnitude from milliseconds to nanoseconds. The SN spectra detected at the donor-bound exciton transition show the multifaceted dynamical regime of the ubiquitous mutual electron and nuclear spin interaction typical for III-V based semiconductor systems. The experiment distinctly reveals the finite Overhauser-shift of an electron spin precession at zero external magnetic field and a second contribution around zero frequency stemming from the electron spin components parallel to the nuclear spin fluctuations. Moreover, at very low frequencies features related with time-dependent nuclear spin fluctuations are clearly resolved making it possible to study the intricate nuclear spin dynamics at zero and low magnetic fields. The findings are in agreement with the developed model of electron and nuclear SN.
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Submitted 17 June, 2015;
originally announced June 2015.
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Optical Spin Noise of a Single Hole Spin Localized in an (InGa)As Quantum Dot
Authors:
Ramin Dahbashi,
Jens Hübner,
Fabian Berski,
Klaus Pierz,
Michael Oestreich
Abstract:
We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light intensity dependent studies reveal even at low magnetic fields a strong magnetic field dependence of the longitudinal heavy hole spin relaxation time with an extremely…
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We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light intensity dependent studies reveal even at low magnetic fields a strong magnetic field dependence of the longitudinal heavy hole spin relaxation time with an extremely long $T_1$ of $\ge$ 180 $μ$s at 31 mT and 5 K. The wavelength dependence of the spin noise power discloses for finite light intensities an inhomogeneous single quantum dot spin noise spectrum which is explained by charge fluctuations in the direct neighborhood of the quantum dot. The charge fluctuations are corroborated by the distinct intensity dependence of the effective spin relaxation rate.
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Submitted 14 April, 2014; v1 submitted 13 June, 2013;
originally announced June 2013.
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Spin noise spectroscopy of donor bound electrons in ZnO
Authors:
H. Horn,
A. Balocchi,
X. Marie,
A. Bakin,
A. Waag,
M. Oestreich,
J. Hübner
Abstract:
We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nucl…
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We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nuclear spins of the naturally occurring $^{67}$Zn isotope. We measure a typical spin dephasing time of 23 ns in agreement with the expected theoretical values. On the other hand, we measure a third, very high spin dephasing rate which is attributed to a high defect density of the investigated ZnO material. Measurements of the spin dynamics under the influence of transverse as well as longitudinal external magnetic fields unambiguously reveal the intriguing connections of the electron spin with its nuclear and structural environment.
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Submitted 25 September, 2012;
originally announced September 2012.
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Ultrahigh Bandwidth Spin Noise Spectroscopy: Detection of Large g-Factor Fluctuations in Highly n-Doped GaAs
Authors:
Fabian Berski,
Hendrik Kuhn,
Jan G. Lonnemann,
Jens Hübner,
Michael Oestreich
Abstract:
We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing an ingenious scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We employ the tech…
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We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing an ingenious scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We employ the technique to highly n-doped bulk GaAs where magnetic field dependent measurements show unexpected large g-factor fluctuations. Calculations suggest that such large g-factor fluctuations do not necessarily result from extrinsic sample variations but are intrinsically present in every doped semiconductor due to the stochastic nature of the dopant distribution.
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Submitted 30 June, 2012;
originally announced July 2012.
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Measurement of heavy-hole spin dephasing in (InGa)As quantum dots
Authors:
R. Dahbashi,
J. Hübner,
F. Berski,
J. Wiegand,
X. Marie,
K. Pierz,
H. W. Schumacher,
M. Oestreich
Abstract:
We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time τ_{fast}^{hh} of 27 ns and a second, long spin relaxation time τ_{slow}^{hh} which exceeds…
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We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time τ_{fast}^{hh} of 27 ns and a second, long spin relaxation time τ_{slow}^{hh} which exceeds the latter by more than one order of magnitude. The two times are attributed to heavy hole spins aligned perpendicular and parallel to the stochastic nuclear magnetic field. Intensity dependent measurements and numerical simulations reveal that the long relaxation time is still obscured by light absorption, despite low laser intensity and large detuning. Off-resonant light absorption causes a suppression of the spin noise signal due to the creation of a second hole entailing a vanishing hole spin polarization.
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Submitted 2 January, 2012; v1 submitted 3 September, 2011;
originally announced September 2011.
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Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells
Authors:
J. Hübner,
S. Kunz,
S. Oertel,
D. Schuh,
M. Pochwała,
H. T. Duc,
J. Förstner,
T. Meier,
M. Oestreich
Abstract:
We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Landé-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure h…
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We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Landé-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure higher order effect that exists as well for diamond type lattices. The measurements for various well widths are very well described within 14 x 14 band k.p theory and illustrate that the electron spin is an excellent meter variable to map out the internal -otherwise hidden- symmetries in two dimensional systems. Fourth order perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a qualitative understanding of the observed effects.
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Submitted 7 April, 2011;
originally announced April 2011.
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Electron spin relaxation as evidence of excitons in an electron-hole plasma
Authors:
S. Oertel,
S. Kunz,
D. Schuh,
W. Wegscheider,
J. Hübner,
M. Oestreich
Abstract:
We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over q…
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We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over quasi free excitons to an electron-hole plasma, and reveal strong excitonic signatures even at relatively high densities and temperatures.
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Submitted 6 April, 2011; v1 submitted 12 March, 2011;
originally announced March 2011.
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Spin-orbit fields in asymmetric (001) quantum wells
Authors:
P. S. Eldridge,
J. Hübner,
S. Oertel,
R. T. Harley,
M. Henini,
M. Oestreich
Abstract:
We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conduction…
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We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conduction band potential gradients which break the inversion symmetry. The negligible Rashba coefficient is a consequence of the 'isomorphism' of conduction and valence band potentials in quantum systems where the asymmetry is solely produced by alloy variations.
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Submitted 11 October, 2010;
originally announced October 2010.
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Semiconductor Spin Noise Spectroscopy: Fundamentals, Accomplishments, and Challenges
Authors:
G. M. Müller,
M. Oestreich,
M. Römer,
J. Hübner
Abstract:
Semiconductor spin noise spectroscopy (SNS) has emerged as a unique experimental tool that utilizes spin fluctuations to provide profound insight into undisturbed spin dynamics in doped semiconductors and semiconductor nanostructures. The technique maps ever present stochastic spin polarization of free and localized carriers at thermal equilibrium via the Faraday effect onto the light polarization…
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Semiconductor spin noise spectroscopy (SNS) has emerged as a unique experimental tool that utilizes spin fluctuations to provide profound insight into undisturbed spin dynamics in doped semiconductors and semiconductor nanostructures. The technique maps ever present stochastic spin polarization of free and localized carriers at thermal equilibrium via the Faraday effect onto the light polarization of an off-resonant probe laser and was transferred from atom optics to semiconductor physics in 2005. The inimitable advantage of spin noise spectroscopy to all other probes of semiconductor spin dynamics lies in the fact that in principle no energy has to be dissipated in the sample, i.e., SNS exclusively yields the intrinsic, undisturbed spin dynamics and promises optical non-demolition spin measurements for prospective solid state based optical spin quantum information devices. SNS is especially suitable for small electron ensembles as the relative noise increases with decreasing number of electrons. In this review, we first introduce the basic principles of SNS and the difference in spin noise of donor bound and of delocalized conduction band electrons. We continue the introduction by discussing the spectral shape of spin noise and prospects of spin noise as a quantum interface between light and matter. In the main part, we give a short overview about spin relaxation in semiconductors and summarize corresponding experiments employing SNS. Finally, we give in-depth insight into the experimental aspects and discuss possible applications of SNS.
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Submitted 25 March, 2011; v1 submitted 12 August, 2010;
originally announced August 2010.
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Efficient Data Averaging for Spin Noise Spectroscopy in Semiconductors
Authors:
Georg M. Müller,
Michael Römer,
Jens Hübner,
Michael Oestreich
Abstract:
Spin noise spectroscopy (SNS) is the perfect tool to investigate electron spin dynamics in semiconductors at thermal equilibrium. We simulate SNS measurements and show that ultrafast digitizers with low bit depth enable sensitive, high bandwidth SNS in the presence of strong optical background shot noise. The simulations reveal that optimized input load at the digitizer is crucial for efficient sp…
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Spin noise spectroscopy (SNS) is the perfect tool to investigate electron spin dynamics in semiconductors at thermal equilibrium. We simulate SNS measurements and show that ultrafast digitizers with low bit depth enable sensitive, high bandwidth SNS in the presence of strong optical background shot noise. The simulations reveal that optimized input load at the digitizer is crucial for efficient spin noise detection while the bit depth influences the sensitivity rather weakly.
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Submitted 25 March, 2011; v1 submitted 9 August, 2010;
originally announced August 2010.
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Electron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition
Authors:
M. Römer,
H. Bernien,
G. Müller,
D. Schuh,
J. Hübner,
M. Oestreich
Abstract:
We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using spin noise spectroscopy. The temperature dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confir…
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We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using spin noise spectroscopy. The temperature dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-insulator-transition shows the longest spin relaxation time at low temperatures, a clear crossing of the spin relaxation rates is observed at 70 K and the highest doped sample reveals the longest spin relaxation time above 70 K.
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Submitted 20 November, 2009;
originally announced November 2009.
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GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs
Authors:
Georg M. Müller,
Michael Römer,
Jens Hübner,
Michael Oestreich
Abstract:
We advance spin noise spectroscopy to an ultrafast tool to resolve high frequency spin dynamics in semiconductors. The optical non-demolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers at densities at the metal-to-insulator transition. The measurements prove in conjunction with depth resolved spin noise measurements that the broadening of the…
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We advance spin noise spectroscopy to an ultrafast tool to resolve high frequency spin dynamics in semiconductors. The optical non-demolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers at densities at the metal-to-insulator transition. The measurements prove in conjunction with depth resolved spin noise measurements that the broadening of the spin dephasing rate does not result from thermal fluctuations or spin-phonon interaction, as previously suggested, but from surface electron depletion.
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Submitted 4 February, 2010; v1 submitted 18 September, 2009;
originally announced September 2009.
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Spin noise spectroscopy in GaAs (110) quantum wells: Access to intrinsic spin lifetimes and equilibrium electron dynamics
Authors:
Georg M. Müller,
Michael Römer,
Dieter Schuh,
Werner Wegscheider,
Jens Hübner,
Michael Oestreich
Abstract:
In this letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The non-demolition measurement technique gives access to the otherwise concealed intrinsic, low temperature electron spin relaxation time of n-doped GaAs (110) quantum wells and to the corresponding low temperature anisotropic spin relaxation. The Brownian mot…
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In this letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The non-demolition measurement technique gives access to the otherwise concealed intrinsic, low temperature electron spin relaxation time of n-doped GaAs (110) quantum wells and to the corresponding low temperature anisotropic spin relaxation. The Brownian motion of the electrons within the spin noise probe laser spot becomes manifest in a modification of the spin noise line width. Thereby, the spatially resolved observation of the stochastic spin polarization uniquely allows to study electron dynamics at equilibrium conditions with a vanishing total momentum of the electron system.
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Submitted 19 September, 2008;
originally announced September 2008.
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THz emission from ultrafast optical orientation
Authors:
F. Nastos,
R. W. Newson,
J. Hübner,
J. E. Sipe,
H. M. van Driel
Abstract:
We show both theoretically and experimentally that the magnetization density accompanying ultrafast excitation of a semiconductor with circular polarized light varies rapidly enough to produce a detectable THz field.
We show both theoretically and experimentally that the magnetization density accompanying ultrafast excitation of a semiconductor with circular polarized light varies rapidly enough to produce a detectable THz field.
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Submitted 7 May, 2007;
originally announced May 2007.
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Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs
Authors:
J. Hübner,
S. Döhrmann,
D. Hägele,
M. Oestreich
Abstract:
Very high precision measurements of the electron Lande g-factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature dependent effective mass a temperature dependence of the interband matrix element within a common five level kp-theory can model both parameters con…
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Very high precision measurements of the electron Lande g-factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature dependent effective mass a temperature dependence of the interband matrix element within a common five level kp-theory can model both parameters consistently. A strong decrease of the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.
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Submitted 6 May, 2009; v1 submitted 24 August, 2006;
originally announced August 2006.
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Spin flip from dark to bright states in InP quantum dots
Authors:
D. W. Snoke,
J. Huebner,
W. W. Ruehle,
M. Zundel
Abstract:
We report measurements of the time for spin flip from dark (non-light emitting) exciton states in quantum dots to bright (light emitting) exciton states in InP quantum dots. Dark excitons are created by two-photon excitation by an ultrafast laser. The time for spin flip between dark and bright states is found to be approximately 200 ps, independent of density and temperature below 70 K. This is…
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We report measurements of the time for spin flip from dark (non-light emitting) exciton states in quantum dots to bright (light emitting) exciton states in InP quantum dots. Dark excitons are created by two-photon excitation by an ultrafast laser. The time for spin flip between dark and bright states is found to be approximately 200 ps, independent of density and temperature below 70 K. This is much shorter than observed in other quantum dot systems. The rate of decay of the luminescence intensity, approximately 300 ps, is not simply equal to the radiative decay rate from the bright states, because the rate of decay is limited by the rate of conversion from dark excitons into bright excitons. The dependence of the luminescence decay time on the spin flip time is a general effect that applies to many experiments.
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Submitted 8 October, 2003;
originally announced October 2003.
