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Effect of low-temperature compression on superconductivity and crystal structure in strontium metal
Authors:
J. Lim,
S. Sinha,
D. E. Jackson,
R. S. Kumar,
C. Park,
R. J. Hemley,
D. VanGennep,
Y. K. Vohra,
R. G. Hennig,
P. J. Hirschfeld,
G. R. Stewart,
J. J. Hamlin
Abstract:
The superconducting and structural properties of elemental strontium metal were investigated under pressures up to 60 GPa while maintaining cryogenic conditions during pressure application. Applying pressure at low temperatures reveals differences in superconducting and structural phases compared to previous reports obtained at room temperatures. Notably, the superconducting critical temperature e…
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The superconducting and structural properties of elemental strontium metal were investigated under pressures up to 60 GPa while maintaining cryogenic conditions during pressure application. Applying pressure at low temperatures reveals differences in superconducting and structural phases compared to previous reports obtained at room temperatures. Notably, the superconducting critical temperature exhibits a twofold increase under compression after cryogenic cooling within the pressure range of 35-42 GPa, compared to cryogenic cooling after room-temperature compression. Subsequently, the transition width becomes significantly sharper above 42 GPa. Low-temperature X-ray diffraction measurements under pressure reveal that this change corresponds to the Sr-III to Sr-IV transition, with no evidence of any metastable structure. Furthermore, the monoclinic Sr-IV structure was observed to remain stable to much higher pressures - at least up to 60 GPa, without the appearance of the incommensurate Sr-V phase present at room temperature. This implies that thermal activation energy plays an important role in overcoming the presence of a kinetic barrier to the Sr-V phase at room temperature.
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Submitted 12 August, 2024;
originally announced August 2024.
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Accelerating superconductor discovery through tempered deep learning of the electron-phonon spectral function
Authors:
Jason B. Gibson,
Ajinkya C. Hire,
Philip M. Dee,
Oscar Barrera,
Benjamin Geisler,
Peter J. Hirschfeld,
Richard G. Hennig
Abstract:
Integrating deep learning with the search for new electron-phonon superconductors represents a burgeoning field of research, where the primary challenge lies in the computational intensity of calculating the electron-phonon spectral function, $α^2F(ω)$, the essential ingredient of Midgal-Eliashberg theory of superconductivity. To overcome this challenge, we adopt a two-step approach. First, we com…
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Integrating deep learning with the search for new electron-phonon superconductors represents a burgeoning field of research, where the primary challenge lies in the computational intensity of calculating the electron-phonon spectral function, $α^2F(ω)$, the essential ingredient of Midgal-Eliashberg theory of superconductivity. To overcome this challenge, we adopt a two-step approach. First, we compute $α^2F(ω)$ for 818 dynamically stable materials. We then train a deep-learning model to predict $α^2F(ω)$, using an unconventional training strategy to temper the model's overfitting, enhancing predictions. Specifically, we train a Bootstrapped Ensemble of Tempered Equivariant graph neural NETworks (BETE-NET), obtaining an MAE of 0.21, 45 K, and 43 K for the Eliashberg moments derived from $α^2F(ω)$: $λ$, $ω_{\log}$, and $ω_{2}$, respectively, yielding an MAE of 2.5 K for the critical temperature, $T_c$. Further, we incorporate domain knowledge of the site-projected phonon density of states to impose inductive bias into the model's node attributes and enhance predictions. This methodological innovation decreases the MAE to 0.18, 29 K, and 28 K, respectively, yielding an MAE of 2.1 K for $T_c$. We illustrate the practical application of our model in high-throughput screening for high-$T_c$ materials. The model demonstrates an average precision nearly five times higher than random screening, highlighting the potential of ML in accelerating superconductor discovery. BETE-NET accelerates the search for high-$T_c$ superconductors while setting a precedent for applying ML in materials discovery, particularly when data is limited.
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Submitted 29 January, 2024;
originally announced January 2024.
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Optical properties and electronic correlations in La$_3$Ni$_2$O$_7$ bilayer nickelates under high pressure
Authors:
Benjamin Geisler,
Laura Fanfarillo,
James J. Hamlin,
Gregory R. Stewart,
Richard G. Hennig,
P. J. Hirschfeld
Abstract:
We explore the optical properties of La3Ni2O7 bilayer nickelates by using density functional theory including a Coulomb repulsion term. Convincing agreement with recent experimental ambient-pressure spectra is achieved for U=3eV, which permits tracing the microscopic origin of the characteristic features. Simultaneous consistency with angle-resolved photoemission spectroscopy and x-ray diffraction…
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We explore the optical properties of La3Ni2O7 bilayer nickelates by using density functional theory including a Coulomb repulsion term. Convincing agreement with recent experimental ambient-pressure spectra is achieved for U=3eV, which permits tracing the microscopic origin of the characteristic features. Simultaneous consistency with angle-resolved photoemission spectroscopy and x-ray diffraction suggests the notion of rather moderate electronic correlations in this novel high-Tc superconductor. Oxygen vacancies form predominantly at the inner apical sites and renormalize the optical spectrum quantitatively, while the released electrons are largely accommodated by a defect state. We show that the structural transition occurring under high pressure coincides with a significant enhancement of the Drude weight and a reduction of the out-of-plane interband contribution that act as a fingerprint of the emerging hole pocket. Finally, we investigate the role of the 2-2 versus 1-3 layer stacking and compare the bilayer nickelate to La4Ni3O10, La3Ni2O6, and NdNiO2, unveiling general trends in the optical spectrum as a function of the formal Ni valence in Ruddlesden-Popper versus reduced Ruddlesden-Popper nickelates.
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Submitted 11 April, 2024; v1 submitted 8 January, 2024;
originally announced January 2024.
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Diboride compounds doped with transition metals$\unicode{x2013}$a route to superconductivity through structure stabilization as well as defects
Authors:
P. M. Dee,
J. S. Kim,
A. C. Hire,
J. Lim,
L. Fanfarillo,
S. Sinha,
J. J. Hamlin,
R. G. Hennig,
P. J. Hirschfeld,
G. R. Stewart
Abstract:
Recent investigations into MoB$_{2}$ have unveiled a direct connection between a pressure-induced structural transition to a P6/mmm space group structure and the emergence of superconductivity, producing critical temperatures up to 32 K at 100 GPa. This pressure-induced superconducting state underscores the potential of doped MoB$_{2}$ as a possible candidate for metastable superconductivity at am…
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Recent investigations into MoB$_{2}$ have unveiled a direct connection between a pressure-induced structural transition to a P6/mmm space group structure and the emergence of superconductivity, producing critical temperatures up to 32 K at 100 GPa. This pressure-induced superconducting state underscores the potential of doped MoB$_{2}$ as a possible candidate for metastable superconductivity at ambient pressure. In this work, we demonstrate that doping by Zr, Hf, or Ta stabilizes the P6/mmm structure at ambient pressure and results in the realization of a superconducting state with critical temperatures ranging from 2.4 up to 8.5 K depending on the specific doping. We estimate the electron-phonon coupling $λ$ and the density of states based on resistivity and specific heat data, finding that $λ$ ranges from 0.4 - 0.6 for these compounds. Finally, to investigate the role of possible metastable defect structures on the critical temperature, we analyze MoB$_{2}$, MoB$_{2.5}$, and Nb/Zr-doped MoB$_{2}$ using rapid cooling techniques. Notably, splat-quenching produces samples with higher critical temperatures and even retains superconductivity in MoB$_{2}$ at ambient pressure, achieving a critical temperature of 4.5 K.
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Submitted 11 October, 2023; v1 submitted 5 October, 2023;
originally announced October 2023.
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Structural transitions, octahedral rotations, and electronic properties of $A_3$Ni$_2$O$_7$ rare-earth nickelates under high pressure
Authors:
Benjamin Geisler,
James J. Hamlin,
Gregory R. Stewart,
Richard G. Hennig,
P. J. Hirschfeld
Abstract:
Motivated by the recent observation of superconductivity with $T_c \sim 80$ K in pressurized La3Ni2O7 [Nature 621, 493 (2023)], we explore the structural and electronic properties in A3Ni2O7 bilayer nickelates (A=La-Lu, Y, Sc) as a function of hydrostatic pressure (0-150 GPa) from first principles including a Coulomb repulsion term. At $\sim 20$ GPa, we observe an orthorhombic-to-tetragonal transi…
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Motivated by the recent observation of superconductivity with $T_c \sim 80$ K in pressurized La3Ni2O7 [Nature 621, 493 (2023)], we explore the structural and electronic properties in A3Ni2O7 bilayer nickelates (A=La-Lu, Y, Sc) as a function of hydrostatic pressure (0-150 GPa) from first principles including a Coulomb repulsion term. At $\sim 20$ GPa, we observe an orthorhombic-to-tetragonal transition in La$_3$Ni$_2$O$_7$ at variance with recent x-ray diffraction data, which points to so-far unresolved complexities at the onset of superconductivity, e.g., charge doping by variations in the oxygen stoichiometry. We compile a structural phase diagram with particular emphasis on the $b/a$ ratio, octahedral anisotropy, and octahedral rotations. Intriguingly, chemical and external pressure emerge as two distinct and counteracting control parameters. We find unexpected correlations between $T_c$ and the in-plane Ni-O-Ni bond angles for La$_3$Ni$_2$O$_7$. Moreover, two novel structural phases with significant $c^+$ octahedral rotations and in-plane bond disproportionations are uncovered for A=Nd-Lu, Y, Sc that exhibit a surprising pressure-driven electronic reconstruction in the Ni $e_g$ manifold. By disentangling the involvement of basal versus apical oxygen states at the Fermi surface, we identify Tb$_3$Ni$_2$O$_7$ as an interesting candidate for superconductivity at ambient pressure. These results suggest a profound tunability of the structural and electronic phases in this novel materials class and are key for a fundamental understanding of the superconductivity mechanism.
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Submitted 20 March, 2024; v1 submitted 26 September, 2023;
originally announced September 2023.
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Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides
Authors:
Feifei Xiang,
Lysander Huberich,
Preston A. Vargas,
Riccardo Torsi,
Jonas Allerbeck,
Anne Marie Z. Tan,
Chengye Dong,
Pascal Ruffieux,
Roman Fasel,
Oliver Gröning,
Yu-Chuan Lin,
Richard G. Hennig,
Joshua A. Robinson,
Bruno Schuler
Abstract:
The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS…
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The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS$_2$ by scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM). By substrate chemical gating different charge states of sulfur vacancies (Vac$_\text{S}$) and substitutional rhenium dopants (Re$_\text{Mo}$) can be stabilized. Vac$_\text{S}^{-1}$ as well as Re$_\text{Mo}^{0}$ and Re$_\text{Mo}^{-1}$ exhibit local lattice distortions and symmetry-broken defect orbitals attributed to a Jahn-Teller effect (JTE) and pseudo-JTE, respectively. By mapping the electronic and geometric structure of single point defects, we disentangle the effects of spatial averaging, charge multistability, configurational dynamics, and external perturbations that often mask the presence of local symmetry breaking.
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Submitted 4 August, 2023;
originally announced August 2023.
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Nb-substitution suppresses the superconducting critical temperature of pressurized MoB$_2$
Authors:
J. Lim,
S. Sinha,
A. C. Hire,
J. S. Kim,
P. M. Dee,
R. S. Kumar,
D. Popov,
R. J. Hemley,
R. G. Hennig,
P. J. Hirschfeld,
G. R. Stewart,
J. J. Hamlin
Abstract:
A recent work has demonstrated that MoB$_2$, transforming to the same structure as MgB$_2$ ($P6/mmm$), superconducts at temperatures above 30 K near 100 GPa [C. Pei $et$ $al$. Natl. Sci. Rev., nwad034 (2023)], and Nb-substitution in MoB$_2$ stabilizes the $P6/mmm$ structure down to ambient pressure [A. C. Hire $et$ $al$. Phys. Rev. B 106, 174515 (2022)]. The current work explores the high pressure…
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A recent work has demonstrated that MoB$_2$, transforming to the same structure as MgB$_2$ ($P6/mmm$), superconducts at temperatures above 30 K near 100 GPa [C. Pei $et$ $al$. Natl. Sci. Rev., nwad034 (2023)], and Nb-substitution in MoB$_2$ stabilizes the $P6/mmm$ structure down to ambient pressure [A. C. Hire $et$ $al$. Phys. Rev. B 106, 174515 (2022)]. The current work explores the high pressure superconducting behavior of Nb-substituted MoB$_2$ (Nb$_{0.25}$Mo$_{0.75}$B$_2$). High pressure x-ray diffraction measurements show that the sample remains in the ambient pressure $P6/mmm$ structure to at least 160 GPa. Electrical resistivity measurements demonstrate that from an ambient pressure $T_c$ of 8 K (confirmed by specific heat to be a bulk effect), the critical temperature is suppressed to 4 K at 50 GPa, before gradually rising to 5.5 K at 170 GPa. The critical temperature at high pressure is thus significantly lower than that found in MoB$_2$ under pressure (30 K), revealing that Nb-substitution results in a strong suppression of the superconducting critical temperature. Our calculations indeed find a reduced electron-phonon coupling in Nb$_{0.25}$Mo$_{0.75}$B$_2$, but do not account fully for the observed suppression, which may also arise from inhomogeneity and enhanced spin fluctuations.
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Submitted 5 September, 2023; v1 submitted 27 February, 2023;
originally announced February 2023.
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High critical field superconductivity at ambient pressure in MoB$_2$ stabilized in the P6/mmm structure via Nb substitution
Authors:
A. C. Hire,
S. Sinha,
J. Lim,
J. S. Kim,
P. M. Dee,
L. Fanfarillo,
J. J. Hamlin,
R. G. Hennig,
P. J. Hirschfeld,
G. R. Stewart
Abstract:
Recently it was discovered that, under elevated pressures, MoB$_2$ exhibits superconductivity at a critical temperature, $T_c$, as high as 32 K. The superconductivity appears to develop following a pressure-induced structural transition from the ambient pressure R$\bar{3}$m structure to an MgB$_2$-like P6/mmm structure. This suggests that remarkably high $T_c$ values among diborides are not restri…
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Recently it was discovered that, under elevated pressures, MoB$_2$ exhibits superconductivity at a critical temperature, $T_c$, as high as 32 K. The superconductivity appears to develop following a pressure-induced structural transition from the ambient pressure R$\bar{3}$m structure to an MgB$_2$-like P6/mmm structure. This suggests that remarkably high $T_c$ values among diborides are not restricted to MgB$_2$ as previously appeared to be the case, and that similarly high $T_c$ values may occur in other diborides if they can be coerced into the MgB$_2$ structure. In this paper, we show that density functional theory calculations indicate that phonon free energy stabilizes the P6/mmm structure over the R$\bar{3}$m at high temperatures across the Nb$_{1-x}$Mo$_x$B$_2$ series. X-ray diffraction confirms that the synthesized Nb-substituted MoB$_2$ adopts the MgB$_2$ crystal structure. High magnetic field electrical resistivity measurements and specific heat measurements demonstrate that Nb$_{1-x}$Mo$_x$B$_2$ exhibits superconductivity with $T_c$ as high as 8 K and critical fields approaching 6 T.
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Submitted 30 December, 2022;
originally announced December 2022.
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Magnetic molecule tunnel heterojunctions
Authors:
Xuanyuan Jiang,
Andrew Brooks,
Shuanglong Liu,
John Koptur-Palenchar,
Yundi Quan,
Richard G. Hennig,
Hai-Ping Cheng,
Xiaoguang Zhang,
Arthur F. Hebard
Abstract:
We characterize molecular magnet heterojunctions in which sublimated CoPc films as thin as 5 nm are sandwiched between transparent conducting bottom-layer indium tin oxide and top-layer soft-landing eutectic GaIn (EGaIn) electrodes. The roughness of the cobalt phthalocyanine (CoPc) films was determined by atomic force microscopy to be on the order of several nanometers, and crystalline ordering of…
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We characterize molecular magnet heterojunctions in which sublimated CoPc films as thin as 5 nm are sandwiched between transparent conducting bottom-layer indium tin oxide and top-layer soft-landing eutectic GaIn (EGaIn) electrodes. The roughness of the cobalt phthalocyanine (CoPc) films was determined by atomic force microscopy to be on the order of several nanometers, and crystalline ordering of lying-down planar molecules was confirmed by X-ray diffraction. The current-voltage (I-V) characteristics reveal the onset of a superconducting gap at Tc = 6 K, which together with higher temperature fits to a modified Simmons' model, provide incontrovertible evidence for direct quantum mechanical tunneling processes through the magnetic molecules in our heterojunctions. The voltage dependent features in the differential conductance measurements relate to spin states of single molecules or aggregates of molecules and should prove to be important for quantum information device development.
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Submitted 27 April, 2022;
originally announced April 2022.
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Crystal Structure of the $τ_{11}$ Al$_4$Fe$_{1.7}$Si Phase from Neutron Diffraction and Ab Initio Calculations
Authors:
Biswas Rijal,
Sujeily Soto,
Kausturi Parui,
Anil Sachdev,
Megan M. Butala,
Michele V. Manuel,
Richard G. Hennig
Abstract:
The intermetallic $τ_{11}$ Al$_4$Fe$_{1.7}$Si phase is of interest for high-temperature structural application due to its combination of low density and high strength. We determine the crystal structure of the $τ_{11}$ phase through a combination of powder neutron diffraction and density functional theory calculations. Using Pawley and Rietveld refinements of the neutron diffraction data provides…
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The intermetallic $τ_{11}$ Al$_4$Fe$_{1.7}$Si phase is of interest for high-temperature structural application due to its combination of low density and high strength. We determine the crystal structure of the $τ_{11}$ phase through a combination of powder neutron diffraction and density functional theory calculations. Using Pawley and Rietveld refinements of the neutron diffraction data provides an initial crystal structure model. Since Al and Si have nearly identical neutron scattering lengths, we use density-functional calculations to determine their preferred site occupations. The $τ_{11}$ phase exhibits a hexagonal crystal structure with space group $P6_3/mmc$ and lattice parameters of $a=7.478$~Å and $c=7.472$~Å. The structure comprises five Wyckoff positions; Al occupies the $6h$ and $12k$ sites, Fe the $2a$ and $6h$ sites, and Si the $2a$ sites. We observe site disorder and partial occupancies on all sites with a large fraction of 80\% Fe vacancies on the $2d$ sites, indicating an entropic stabilization of the $τ_{11}$ phase at high temperature.
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Submitted 12 November, 2021;
originally announced November 2021.
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Ultra-fast interpretable machine-learning potentials
Authors:
Stephen R. Xie,
Matthias Rupp,
Richard G. Hennig
Abstract:
All-atom dynamics simulations are an indispensable quantitative tool in physics, chemistry, and materials science, but large systems and long simulation times remain challenging due to the trade-off between computational efficiency and predictive accuracy. To address this challenge, we combine effective two- and three-body potentials in a cubic B-spline basis with regularized linear regression to…
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All-atom dynamics simulations are an indispensable quantitative tool in physics, chemistry, and materials science, but large systems and long simulation times remain challenging due to the trade-off between computational efficiency and predictive accuracy. To address this challenge, we combine effective two- and three-body potentials in a cubic B-spline basis with regularized linear regression to obtain machine-learning potentials that are physically interpretable, sufficiently accurate for applications, as fast as the fastest traditional empirical potentials, and two to four orders of magnitude faster than state-of-the-art machine-learning potentials. For data from empirical potentials, we demonstrate exact retrieval of the potential. For data from density functional theory, the predicted energies, forces, and derived properties, including phonon spectra, elastic constants, and melting points, closely match those of the reference method. The introduced potentials might contribute towards accurate all-atom dynamics simulations of large atomistic systems over long time scales.
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Submitted 25 May, 2023; v1 submitted 1 October, 2021;
originally announced October 2021.
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Creating superconductivity in WB2 through pressure-induced metastable planar defects
Authors:
J. Lim,
A. C. Hire,
Y. Quan,
J. S. Kim,
S. R. Xie,
S. Sinha,
R. S. Kumar,
D. Popov,
C. Park,
R. J. Hemley,
J. J. Hamlin,
R. G. Hennig,
P. J. Hirschfeld,
G. R. Stewart
Abstract:
High-pressure electrical resistivity measurements reveal that the mechanical deformation of ultra-hard WB2 during compression induces superconductivity above 50 GPa with a maximum superconducting critical temperature, Tc of 17 K at 90 GPa. Upon further compression up to 190 GPa, the Tc gradually decreases. Theoretical calculations show that electron-phonon mediated superconductivity originates fro…
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High-pressure electrical resistivity measurements reveal that the mechanical deformation of ultra-hard WB2 during compression induces superconductivity above 50 GPa with a maximum superconducting critical temperature, Tc of 17 K at 90 GPa. Upon further compression up to 190 GPa, the Tc gradually decreases. Theoretical calculations show that electron-phonon mediated superconductivity originates from the formation of metastable stacking faults and twin boundaries that exhibit a local structure resembling MgB2} (hP3, space group 191, prototype AlB2). Synchrotron x-ray diffraction measurements up to 145 GPa} show that the ambient pressure hP12 structure (space group 194, prototype WB2) continues to persist to this pressure, consistent with the formation of the planar defects above 50 GPa. The abrupt appearance of superconductivity under pressure does not coincide with a structural transition but instead with the formation and percolation of mechanically-induced stacking faults and twin boundaries. The results identify an alternate route for designing superconducting materials.
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Submitted 12 September, 2022; v1 submitted 23 September, 2021;
originally announced September 2021.
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Controllable p-type Doping of 2D WSe2 via Vanadium Substitution
Authors:
Azimkhan Kozhakhmetov,
Samuel Stolz,
Anne Marie Z. Tan,
Rahul Pendurthi,
Saiphaneendra Bachu,
Furkan Turker,
Nasim Alem,
Jessica Kachian,
Saptarshi Das,
Richard G. Hennig,
Oliver Gröning,
Bruno Schuler,
Joshua A. Robinson
Abstract:
Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, we report scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400…
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Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, we report scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400 °C, respectively. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, our study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.
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Submitted 28 July, 2021;
originally announced July 2021.
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Charged Vacancy Defects in Black Phosphorus Monolayer Phosphorene
Authors:
Biswas Rijal,
Anne Marie Z. Tan,
Christoph Freysoldt,
Richard G. Hennig
Abstract:
The two-dimensional semiconductor phosphorene has attracted extensive research interests for potential applications in optoelectronics, spintronics, catalysis, sensors, and energy conversion. To harness phosphorene's potential requires a better understanding of how intrinsic defects control carrier concentration, character, and mobility. Using density-functional theory and a charge correction sche…
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The two-dimensional semiconductor phosphorene has attracted extensive research interests for potential applications in optoelectronics, spintronics, catalysis, sensors, and energy conversion. To harness phosphorene's potential requires a better understanding of how intrinsic defects control carrier concentration, character, and mobility. Using density-functional theory and a charge correction scheme to account for the appropriate boundary conditions, we conduct a comprehensive study of the effect of structure on the formation energy, electronic structure, and charge transition level of the charged vacancy point defects in phosphorene. We predict that the neutral vacancy exhibits a 9-5 ring structure with a formation energy of 1.7 eV and transitions to a negatively charged state at a Fermi level 1.04 eV above the valence band maximum. The corresponding optical charge transitions display sizeable Frank-Condon shifts with a large Stokes shift of 0.3 eV. Phosphorene vacancies should become negatively charged in n-doped phosphorene, which would passivate the dopants and reduce the charge carrier concentration and mobility.
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Submitted 10 July, 2021;
originally announced July 2021.
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Machine learning of superconducting critical temperature from Eliashberg theory
Authors:
S. R. Xie,
Y. Quan,
A. C. Hire,
B. Deng,
J. M. DeStefano,
I. Salinas,
U. S. Shah,
L. Fanfarillo,
J. Lim,
J. Kim,
G. R. Stewart,
J. J. Hamlin,
P. J. Hirschfeld,
R. G. Hennig
Abstract:
The Eliashberg theory of superconductivity accounts for the fundamental physics of conventional electron-phonon superconductors, including the retardation of the interaction and the effect of the Coulomb pseudopotential, to predict the critical temperature $T_c$ and other properties. McMillan, Allen, and Dynes derived approximate closed-form expressions for the critical temperature predicted by th…
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The Eliashberg theory of superconductivity accounts for the fundamental physics of conventional electron-phonon superconductors, including the retardation of the interaction and the effect of the Coulomb pseudopotential, to predict the critical temperature $T_c$ and other properties. McMillan, Allen, and Dynes derived approximate closed-form expressions for the critical temperature predicted by this theory, which depends essentially on the electron-phonon spectral function $α^2F(ω)$, using $α^2F$ for low-$T_c$ superconductors. Here we show that modern machine learning techniques can substantially improve these formulae, accounting for more general shapes of the $α^2F$ function. Using symbolic regression and the sure independence screening and sparsifying operator (SISSO) framework, together with a database of artificially generated $α^2F$ functions, ranging from multimodal Einstein-like models to calculated spectra of polyhydrides, as well as numerical solutions of the Eliashberg equations, we derive a formula for $T_c$ that performs as well as Allen-Dynes for low-$T_c$ superconductors, and substantially better for higher-$T_c$ ones. The expression identified through our data-driven approach corrects the systematic underestimation of $T_c$ while reproducing the physical constraints originally outlined by Allen and Dynes. This equation should replace the Allen-Dynes formula for the prediction of higher-temperature superconductors and for the estimation of $λ$ from experimental data.
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Submitted 10 July, 2021; v1 submitted 9 June, 2021;
originally announced June 2021.
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Towards high-throughput superconductor discovery via machine learning
Authors:
Stephen R. Xie,
Y. Quan,
Ajinkya Hire,
Laura Fanfarillo,
G. R. Stewart,
J. J. Hamlin,
R. G. Hennig,
P. J. Hirschfeld
Abstract:
Even though superconductivity has been studied intensively for more than a century, the vast majority of superconductivity research today is carried out in nearly the same manner as decades ago. That is, each study tends to focus on only a single material or small subset of materials, and discoveries are made more or less serendipitously. Recent increases in computing power, novel machine learning…
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Even though superconductivity has been studied intensively for more than a century, the vast majority of superconductivity research today is carried out in nearly the same manner as decades ago. That is, each study tends to focus on only a single material or small subset of materials, and discoveries are made more or less serendipitously. Recent increases in computing power, novel machine learning algorithms, and improved experimental capabilities offer new opportunities to revolutionize superconductor discovery. These will enable the rapid prediction of structures and properties of novel materials in an automated, high-throughput fashion and the efficient experimental testing of these predictions. Here, we review efforts to use machine learning to attain this goal.
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Submitted 22 April, 2021;
originally announced April 2021.
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Superconductivity of $β$-Gallium
Authors:
Yundi Quan,
Peter J. Hirschfeld,
Richard G. Hennig
Abstract:
Elemental gallium can exist in several phases under ambient conditions. The stable $α$ phase has a superconducting transition temperature, $T_c$, of 0.9~K. By contrast, the $T_c$ of the metastable $β$ phase is around 6~K. To understand the significant improvement in $T_c$ in the $β$ phase, we first calculate the electronic structure, phonon dispersion, and the electron-phonon coupling of gallium i…
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Elemental gallium can exist in several phases under ambient conditions. The stable $α$ phase has a superconducting transition temperature, $T_c$, of 0.9~K. By contrast, the $T_c$ of the metastable $β$ phase is around 6~K. To understand the significant improvement in $T_c$ in the $β$ phase, we first calculate the electronic structure, phonon dispersion, and the electron-phonon coupling of gallium in the $α$ and $β$ phase. Next, we solve the Eliashberg equations to obtain the superconducting gaps and the transition temperatures. Using these results, we relate the increased $T_c$ in the $β$ phase to structural differences between the phases that affect the electronic and phonon properties. The structure motif of the $α$ phase is Ga$_2$ dimers, which form strong covalent bonds leading to bonding and antibonding states that suppress the density of states at the Fermi level. The $β$-Ga structure consists of arrays of Ga chains that favor strong coupling between the lattice vibrations and the electronic states near the Fermi level. The increased density of states and strong coupling to the phonons for the $β$-Ga chains compared to the $α$ Ga$_2$ dimers enhance superconductivity in the $β$-Ga phase.
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Submitted 20 April, 2021;
originally announced April 2021.
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High pressure study of low-Z superconductor Be$_{22}$Re
Authors:
J. Lim,
A. C. Hire,
Y. Quan,
J. Kim,
L. Fanfarillo,
S. R. Xie,
R. S. Kumar,
C. Park,
R. J. Hemley,
Y. K. Vohra,
R. G. Hennig,
P. J. Hirschfeld,
G. R. Stewart,
J. J. Hamlin
Abstract:
With $T_c \sim 9.6~\mathrm{K}$, Be$_{22}$Re exhibits one of the highest critical temperatures among Be-rich compounds. We have carried out a series of high-pressure electrical resistivity measurements on this compound to 30 GPa. The data show that the critical temperature $T_c$ is suppressed gradually at a rate of $dT_c/dP = -0.05~\mathrm{K/GPa}$. Using density functional theory (DFT) calculations…
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With $T_c \sim 9.6~\mathrm{K}$, Be$_{22}$Re exhibits one of the highest critical temperatures among Be-rich compounds. We have carried out a series of high-pressure electrical resistivity measurements on this compound to 30 GPa. The data show that the critical temperature $T_c$ is suppressed gradually at a rate of $dT_c/dP = -0.05~\mathrm{K/GPa}$. Using density functional theory (DFT) calculations of the electronic and phonon density of states (DOS) and the measured critical temperature, we estimate that the rapid increase in lattice stiffening in Be$_{22}$Re overwhelms a moderate increase in the electron-ion interaction with pressure, resulting in the decrease in $T_c$. High pressure x-ray diffraction measurements show that the ambient pressure crystal structure of Be$_{22}$Re persists to at least 154 GPa. We discuss the relationship between low-Z Be-rich superconductors and the high-$T_c$ superhydrides.
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Submitted 4 April, 2021; v1 submitted 2 April, 2021;
originally announced April 2021.
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A15 Nb$_3$Si -- A "high" Tc superconductor synthesized at a pressure of one megabar and metastable at ambient conditions
Authors:
Jinhyuk Lim,
J. S. Kim,
Ajinkya C. Hire,
Yundi Quan,
R. G. Hennig,
P. J. Hirschfeld,
J. J. Hamlin,
G. R. Stewart,
Bart Olinger
Abstract:
A15 Nb$_3$Si is, until now, the only high temperature superconductor produced at high pressure (~110 GPa) that has been successfully brought back to room pressure conditions in a metastable condition. Based on the current great interest in trying to create metastable-at-room-pressure high temperature superconductors produced at high pressure, we have restudied explosively compressed A15 Nb$_3$Si a…
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A15 Nb$_3$Si is, until now, the only high temperature superconductor produced at high pressure (~110 GPa) that has been successfully brought back to room pressure conditions in a metastable condition. Based on the current great interest in trying to create metastable-at-room-pressure high temperature superconductors produced at high pressure, we have restudied explosively compressed A15 Nb$_3$Si and its production from tetragonal Nb$_3$Si. First, diamond anvil cell pressure measurements up to 88 GPa were performed on explosively compressed A15 Nb$_3$Si material to trace Tc as a function of pressure. Tc is suppressed to ~ 5.2 K at 88 GPa. Then, using these Tc (P) data for A15 Nb$_3$Si, pressures up to 92 GPa were applied at room temperature (which increased to 120 GPa at 5 K) on tetragonal Nb$_3$Si. Measurements of the resistivity gave no indication of any A15 structure production, i.e., no indications of the superconductivity characteristic of A15 Nb$_3$Si. This is in contrast to the explosive compression (up to P~110 GPa) of tetragonal Nb$_3$Si, which produced 50-70% A15 material, Tc = 18 K at ambient pressure, in a 1981 Los Alamos National Laboratory experiment. Our theoretical calculations show that A15 Nb$_3$Si has an enthalpy vs the tetragonal structure that is 0.07 eV/atom smaller at 100 GPa, implying that the accompanying high temperature (1000 deg C) caused by explosive compression is necessary to successfully drive the reaction kinetics of the tetragonal -> A15 Nb$_3$Si structural transformation. Annealing experiments on the A15 explosively compressed material reaching time scales of 39 years are consistent with this viewpoint.
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Submitted 4 June, 2021; v1 submitted 4 December, 2020;
originally announced December 2020.
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Remarkable low-energy properties of the pseudogapped semimetal Be$_5$Pt
Authors:
L. Fanfarillo,
J. J. Hamlin,
R. G. Hennig,
Ajinkya Hire,
P. J. Hirschfeld,
Jungsoo Kim,
Jinhyuk Lim,
Yundi Quan,
G. R. Stewart,
Stephen R. Xie
Abstract:
We report measurements and calculations on the properties of the intermetallic compound Be$_5$Pt. High-quality polycrystalline samples show a nearly constant temperature dependence of the electrical resistivity over a wide temperature range. On the other hand, relativistic electronic structure calculations indicate the existence of a narrow pseudogap in the density of states arising from accidenta…
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We report measurements and calculations on the properties of the intermetallic compound Be$_5$Pt. High-quality polycrystalline samples show a nearly constant temperature dependence of the electrical resistivity over a wide temperature range. On the other hand, relativistic electronic structure calculations indicate the existence of a narrow pseudogap in the density of states arising from accidental approximate Dirac cones extremely close to the Fermi level. A small true gap of order 3 meV is present at the Fermi level, yet the measured resistivity is nearly constant from low to room temperature. We argue that this unexpected behavior can be understood by a cancellation of the energy dependence of density of states and relaxation time due to disorder, and discuss a model for electronic transport. With applied pressure, the resistivity becomes semiconducting, consistent with theoretical calculations that show that the band gap increases with applied pressure. We further discuss the role of Be inclusions in the samples.
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Submitted 26 October, 2020; v1 submitted 17 May, 2020;
originally announced May 2020.
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Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections
Authors:
Anne Marie Z. Tan,
Christoph Freysoldt,
Richard G. Hennig
Abstract:
Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the potential of these materials for electronic devices requires a better understanding of how defects control the carrier concentration, character, and mobility. Utilizi…
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Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the potential of these materials for electronic devices requires a better understanding of how defects control the carrier concentration, character, and mobility. Utilizing a correction scheme developed by Freysoldt and Neugebauer to ensure the appropriate electrostatic boundary conditions for charged defects in 2D materials, we perform density functional theory calculations to compute formation energies and charge transition levels associated with sulfur vacancies in monolayer and layered bulk MoS$_2$. We investigate the convergence of these defect properties with respect to vacuum spacing, in-plane supercell dimensions, and different levels of theory. We also analyze the electronic structures of the defects in different charge states to gain insights into the effect of defects on bonding and magnetism. We predict that both vacancy structures undergo a Jahn-Teller distortion, which helps stabilize the sulfur vacancy in the $-1$ charged state.
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Submitted 7 April, 2020;
originally announced April 2020.
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Computational Synthesis of Substrates by Crystal Cleavage
Authors:
Joshua T. Paul,
Alice Galdi,
Christopher Parzyck,
Kyle Shen,
Richard G. Hennig
Abstract:
The discovery of novel substrate materials has been dominated by trial and error, opening the opportunity for a systematic search. To identify stable crystal surfaces, we generate bonding networks for materials from the Materials Project database with one to five atoms in the primitive unit cell. For three-dimensional crystals in this set, we systematically break up to three bonds in the bonding n…
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The discovery of novel substrate materials has been dominated by trial and error, opening the opportunity for a systematic search. To identify stable crystal surfaces, we generate bonding networks for materials from the Materials Project database with one to five atoms in the primitive unit cell. For three-dimensional crystals in this set, we systematically break up to three bonds in the bonding network of the primitive cell. Successful cleavage reduces the bonding network to two periodic dimensions, creating a layer of the cleaved crystal. We identify 4,693 unique cleavage surfaces across 2,133 bulk crystals, 4,626 of which have a maximum Miller index of 1. To characterize the likelihood of cleavage and the thermodynamic stability of the cleaved surfaces, we create monolayers of these surfaces and calculate the work of cleavage and the partially-relaxed surface energy using density functional theory to discover 3,991 potential substrates, 2,307 of which do not contain f-valence electrons and 2,183 of which are derived from a bulk precursor with an entry in the Inorganic Crystal Structure Database. Following, we identify distinct trends in the work of cleavage of these layers and relate them to metallic and covalent/ionic bonding of the three-dimensional precursor. We also assembled a database of commercially available substrates and show that the database of predicted substrates significantly enhances the diversity and range of the distribution of electronic properties and lattice parameters, providing opportunities for the epitaxial growth of many materials. We illustrate the potential impact of the substrate database by identifying several new epitaxial substrates for the transparent conductor BaSnO3, which exhibit low cleavage energies and result in strains an order of magnitude lower than currently used substrates.
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Submitted 29 March, 2021; v1 submitted 3 February, 2020;
originally announced February 2020.
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Uncertainty Quantification for Materials Properties in Density Functional Theory with k-Point Density
Authors:
Joshua J. Gabriel,
Faical Yannick C. Congo,
Alexander Sinnott,
Kiran Mathew,
Thomas C. Allison,
Francesca Tavazza,
Richard G. Hennig
Abstract:
Many computational databases emerged over the last five years that report material properties calculated with density functional theory. The properties in these databases are commonly calculated to a precision that is set by choice of the basis set and the k-point density for the Brillouin zone integration. We determine how the precision of properties obtained from the Birch equation of state for…
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Many computational databases emerged over the last five years that report material properties calculated with density functional theory. The properties in these databases are commonly calculated to a precision that is set by choice of the basis set and the k-point density for the Brillouin zone integration. We determine how the precision of properties obtained from the Birch equation of state for 29 transition metals and aluminum in the three common structures -- fcc, bcc, and hcp -- correlate with the k-point density and the precision of the energy. We show that the precision of the equilibrium volume, bulk modulus, and the pressure derivative of the bulk modulus correlate comparably well with the k-point density and the precision of the energy, following an approximate power law. We recommend the k-point density as the convergence parameter because it is computationally efficient, easy to use as a direct input parameter, and correlates with property precision at least as well as the energy precision. We predict that common k-point density choices in high throughput DFT databases result in precision for the volume of 0.1%, the bulk modulus of 1%, and the pressure derivative of 10%.
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Submitted 6 January, 2020;
originally announced January 2020.
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Functional Form of the Superconducting Critical Temperature from Machine Learning
Authors:
S. R. Xie,
G. R. Stewart,
J. J. Hamlin,
P. J. Hirschfeld,
R. G. Hennig
Abstract:
Predicting the critical temperature $T_c$ of new superconductors is a notoriously difficult task, even for electron-phonon paired superconductors for which the theory is relatively well understood. Early attempts by McMillan and Allen and Dynes to improve on the weak-coupling BCS formula led to closed-form approximate relations between $T_c$ and various measures of the phonon spectrum and the elec…
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Predicting the critical temperature $T_c$ of new superconductors is a notoriously difficult task, even for electron-phonon paired superconductors for which the theory is relatively well understood. Early attempts by McMillan and Allen and Dynes to improve on the weak-coupling BCS formula led to closed-form approximate relations between $T_c$ and various measures of the phonon spectrum and the electron-phonon interaction appearing in Eliashberg theory. Here we propose that these approaches can be improved with the use of machine learning algorithms. As an initial test, we train a model for identifying low-dimensional descriptors using the $T_c < 10$ K data tested by Allen and Dynes, and show that a simple analytical expression thus obtained improves upon the Allen-Dynes fit. Furthermore, the prediction for the recently discovered high $T_c$ material H$_3$S at high pressure is quite reasonable. Interestingly, $T_c$'s for more recently discovered superconducting systems with a more two-dimensional electron-phonon coupling, which do not follow Allen and Dynes' expression, also do not follow our analytic expression. Thus, this machine learning approach appears to be a powerful method for highlighting the need for a new descriptor beyond those used by Allen and Dynes to describe their set of isotropic electron-phonon coupled superconductors. We argue that this machine learning method, and its implied need for a descriptor characterizing Fermi surface properties, represents a promising new approach to superconductor materials discovery which may eventually replace the serendipitous discovery paradigm begun by Kamerlingh Onnes.
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Submitted 16 May, 2019;
originally announced May 2019.
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The conundrum of relaxation volumes in first-principles calculations of charge defects
Authors:
Anuj Goyal,
Kiran Mathew,
Richard G. Hennig,
Aleksandr Chernatynskiy,
Christopher R. Stank,
Samuel T. Murphy,
David A. Andersson,
Simon R. Phillpot,
Blas P. Uberuaga
Abstract:
The defect relaxation volumes obtained from density-functional theory (DFT) calculations of charged vacancies and interstitials are much larger than their neutral counterparts, seemingly unphysically large. In this work, we investigate the possible reasons for this and revisit the methods that address the calculation of charged defect structures in periodic DFT. We probe the dependence of the prop…
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The defect relaxation volumes obtained from density-functional theory (DFT) calculations of charged vacancies and interstitials are much larger than their neutral counterparts, seemingly unphysically large. In this work, we investigate the possible reasons for this and revisit the methods that address the calculation of charged defect structures in periodic DFT. We probe the dependence of the proposed energy corrections to charged defect formation energies on relaxation volumes and find that corrections such as the image charge correction and the alignment correction, which can lead to sizable changes in defect formation energies, have an almost negligible effect on the charged defect relaxation volume. We also investigate the volume for the net neutral defect reactions comprised of individual charged defects, and find that the aggregate formation volumes have reasonable magnitudes. This work highlights an important issue that, as for defect formation energies, the defect formation volumes depend on the choice of reservoir. We show that considering the change in volume of the electron reservoir in the formation reaction of the charged defects, analogous to how volumes of atoms are accounted for in defect formation volumes, can renormalize the formation volumes of charged defects such that they are comparable to neutral defects. This approach enables the description of the elastic properties of isolated charged defects within the overall neutral material, beyond the context of the overall defect reactions that produce the charged defect.
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Submitted 13 April, 2017;
originally announced April 2017.
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Pressure-induced superconductivity in the giant Rashba system BiTeI
Authors:
D. VanGennep,
A. Linscheid,
D. E. Jackson,
S. T. Weir,
Y. K. Vohra,
H. Berger,
G. R. Stewart,
R. G. Hennig,
P. J. Hirschfeld,
J. J. Hamlin
Abstract:
At ambient pressure, BiTeI is the first material found to exhibit a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher pressures, two structural transitions are known to occur. We have carried out a series of electrical resistivity and AC magnetic susceptibility measurements on BiTeI a…
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At ambient pressure, BiTeI is the first material found to exhibit a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher pressures, two structural transitions are known to occur. We have carried out a series of electrical resistivity and AC magnetic susceptibility measurements on BiTeI at pressure up to ~40 GPa in an effort to characterize the properties of the high-pressure phases. A previous calculation found that the high-pressure orthorhombic P4/nmm structure BiTeI is a metal. We find that this structure is superconducting with Tc values as high as 6 K. AC magnetic susceptibility measurements support the bulk nature of the superconductivity. Using electronic structure and phonon calculations, we compute Tc and find that our data is consistent with phonon-mediated superconductivity.
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Submitted 25 October, 2016;
originally announced October 2016.
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Topology-Scaling Identification of Layered Solids and Stable Exfoliated 2D Materials
Authors:
Michael Ashton,
Joshua Paul,
Susan B. Sinnott,
Richard G. Hennig
Abstract:
The Materials Project crystal structure database has been searched for materials possessing layered motifs in their crystal structures using a topology-scaling algorithm. The algorithm identifies and measures the sizes of bonded atomic clusters in a structure's unit cell, and determines their scaling with cell size. The search yielded 826 stable layered materials, which are considered as candidate…
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The Materials Project crystal structure database has been searched for materials possessing layered motifs in their crystal structures using a topology-scaling algorithm. The algorithm identifies and measures the sizes of bonded atomic clusters in a structure's unit cell, and determines their scaling with cell size. The search yielded 826 stable layered materials, which are considered as candidates for the formation of two-dimensional monolayers via exfoliation. Density-functional theory calculates the exfoliation energy of each material and 681 monolayers are found to exhibit exfoliation energies below those of certain already-extant two-dimensional materials, indicating the possibility of exfoliating them from bulk phases. The crystal structures of these two-dimensional materials provide templates for future theoretical searches of stable two-dimensional materials. The optimized structures and other data for all 826 monolayers are provided at https://materialsweb.org .
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Submitted 6 June, 2017; v1 submitted 24 October, 2016;
originally announced October 2016.
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MPInterfaces: A Materials Project based Python Tool for High-Throughput Computational Screening of Interfacial Systems
Authors:
Kiran Mathew,
Arunima K. Singh,
Joshua J. Gabriel,
Kamal Choudhary,
Susan B. Sinnott,
Albert V. Davydov,
Francesca Tavazza,
Richard G. Hennig
Abstract:
A Materials Project based open-source Python tool, MPInterfaces, has been developed to automate the high-throughput computational screening and study of interfacial systems. The framework encompasses creation and manipulation of interface structures for solid/solid hetero-structures, solid/implicit solvents systems, nanoparticle/ligands systems; and the creation of simple system-agnostic workflows…
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A Materials Project based open-source Python tool, MPInterfaces, has been developed to automate the high-throughput computational screening and study of interfacial systems. The framework encompasses creation and manipulation of interface structures for solid/solid hetero-structures, solid/implicit solvents systems, nanoparticle/ligands systems; and the creation of simple system-agnostic workflows for in depth computational analysis using density-functional theory or empirical energy models. The package leverages existing open-source high-throughput tools and extends their capabilities towards the understanding of interfacial systems. We describe the various algorithms and methods implemented in the package. Using several test cases, we demonstrate how the package enables high-throughput computational screening of advanced materials, directly contributing to the Materials Genome Initiative (MGI), which aims to accelerate the discovery, development, and deployment of new materials.
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Submitted 24 February, 2016;
originally announced February 2016.
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Implicit self-consistent electrolyte model in plane-wave density-functional theory
Authors:
Kiran Mathew,
V. S. Chaitanya Kolluru,
Srinidhi Mula,
Stephan N. Steinmann,
Richard G. Hennig
Abstract:
The ab-initio computational treatment of electrochemical systems requires an appropriate treatment of the solid/liquid interfaces. A fully quantum mechanical treatment of the interface is computationally demanding due to the large number of degrees of freedom involved. In this work, we describe a computationally efficient model where the electrode part of the interface is described at the density-…
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The ab-initio computational treatment of electrochemical systems requires an appropriate treatment of the solid/liquid interfaces. A fully quantum mechanical treatment of the interface is computationally demanding due to the large number of degrees of freedom involved. In this work, we describe a computationally efficient model where the electrode part of the interface is described at the density-functional theory (DFT) level, and the electrolyte part is represented through an implicit solvation model based on the Poisson-Boltzmann equation. We describe the implementation of the linearized Poisson-Boltzmann equation into the Vienna Ab-initio Simulation Package (VASP), a widely used DFT code, followed by validation and benchmarking of the method. To demonstrate the utility of the implicit electrolyte model, we apply it to study the surface energy of Cu crystal facets in an aqueous electrolyte as a function of applied electric potential. We show that the applied potential enables the control of the shape of nanocrystals from an octahedral to a truncated octahedral morphology with increasing potential.
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Submitted 24 October, 2019; v1 submitted 13 January, 2016;
originally announced January 2016.
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Implicit solvation model for density-functional study of nanocrystal surfaces and reaction pathways
Authors:
Kiran Mathew,
Ravishankar Sundararaman,
Kendra Letchworth-Weaver,
T. A. Arias,
Richard G. Hennig
Abstract:
Solid-liquid interfaces are at the heart of many modern-day technologies and provide a challenge to many materials simulation methods. A realistic first-principles computational study of such systems entails the inclusion of solvent effects. In this work we implement an implicit solvation model that has a firm theoretical foundation into the widely used density-functional code VASP. The implicit s…
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Solid-liquid interfaces are at the heart of many modern-day technologies and provide a challenge to many materials simulation methods. A realistic first-principles computational study of such systems entails the inclusion of solvent effects. In this work we implement an implicit solvation model that has a firm theoretical foundation into the widely used density-functional code VASP. The implicit solvation model follows the framework of joint density functional theory. We describe the framework, our algorithm and implementation, and benchmarks for small molecular systems. We apply the solvation model to study the surface energies of different facets of semiconducting and metallic nanocrystals and the S$_{\text{N}} 2$ reaction pathway. We find that solvation reduces the surface energies of the nanocrystals, especially for the semiconducting ones and increases the energy barrier of the S$_{\text{N}} 2$ reaction.
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Submitted 15 October, 2013;
originally announced October 2013.
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Ab Initio Discovery of Novel Crystal Structure Stability in Barium and Sodium-Calcium Compounds under Pressure using DFT
Authors:
Joshua A. Taillon,
William W. Tipton,
Richard G. Hennig
Abstract:
Group I/II materials exhibit unexpected structural phase transitions at high pressures, providing potential insight into the origins of elemental superconductivity. We present here a computational study of elemental barium and binary sodium-calcium alloys to identify both known and unknown phases of barium under pressure, as well as stable high-pressure compounds in the immiscible Na-Ca system. To…
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Group I/II materials exhibit unexpected structural phase transitions at high pressures, providing potential insight into the origins of elemental superconductivity. We present here a computational study of elemental barium and binary sodium-calcium alloys to identify both known and unknown phases of barium under pressure, as well as stable high-pressure compounds in the immiscible Na-Ca system. To predict stability, we performed density functional theory calculations on randomly generated structures and evolved them using a genetic algorithm. For barium, we observed all of the expected phases and a number of new metastable structures, excluding the incommensurate Ba-IV structure. We also observed a heretofore unreported structure (α-Sm) predicted to be the ground state from 30-42 GPa. In the Na-Ca system, we demonstrate feasibility of our search method, but have been unable to predict any stable compounds. These results have improved the efficacy of the genetic algorithm, and should provide many promising directions for future work.
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Submitted 13 July, 2012;
originally announced July 2012.
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Importance of High Angular-Momentum Channels in Pseudopotentials for Quantum Monte Carlo
Authors:
William W. Tipton,
Neil D. Drummond,
Richard G. Hennig
Abstract:
Quantum Monte Carlo methods provide in principle an accurate treatment of the many-body problem of the ground and excited states of condensed systems. In practice, however, uncontrolled errors such as those arising from the fixed-node and pseudopotential approximations often limit the quality of results. We show that the accuracy of quantum Monte Carlo calculations is limited by using available ps…
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Quantum Monte Carlo methods provide in principle an accurate treatment of the many-body problem of the ground and excited states of condensed systems. In practice, however, uncontrolled errors such as those arising from the fixed-node and pseudopotential approximations often limit the quality of results. We show that the accuracy of quantum Monte Carlo calculations is limited by using available pseudopotentials. In particular, it is necessary to include angular momentum channels in the pseudopotential for excited angular momentum states and to choose the local channel appropriately to obtain accurate results. Variational and diffusion Monte Carlo calculations for Zn, O, and Si atoms and ions demonstrate that these issues can affect total energies by up to several eV for common pseudopotentials. Adding higher-angular momentum channels into the pseudopotential description reduces such errors drastically without a significant increase in computational cost.
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Submitted 24 March, 2012;
originally announced March 2012.
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Synchrotron x-ray spectroscopy studies of valence and magnetic state in europium metal to extreme pressures
Authors:
W. Bi,
N. M. Souza-Neto,
D. Haskel,
G. Fabbris,
E. E. Alp,
J. Zhao,
R. G. Hennig,
M. M. Abd-Elmeguid,
Y. Meng,
R. W. McCallum,
K. Dennis,
J. S. Schilling
Abstract:
In order to probe the changes in the valence state and magnetic properties of Eu metal under extreme pressure, x-ray absorption near-edge spectroscopy, x-ray magnetic circular dichroism and synchrotron Mössbauer spectroscopy experiments have been carried out. The Mössbauer isomer shift exhibits an anomalous pressure dependence, passing through a maximum near 20 GPa. Density functional theory has b…
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In order to probe the changes in the valence state and magnetic properties of Eu metal under extreme pressure, x-ray absorption near-edge spectroscopy, x-ray magnetic circular dichroism and synchrotron Mössbauer spectroscopy experiments have been carried out. The Mössbauer isomer shift exhibits an anomalous pressure dependence, passing through a maximum near 20 GPa. Density functional theory has been applied to give insight into the pressure-induced changes in both Eu's electronic structure and Mössbauer isomer shift. Contrary to previous reports, Eu is found to remain nearly divalent to the highest pressures reached (87 GPa) with magnetic order persisting to at least 50 GPa. These results should lead to a better understanding of the nature of the superconducting state found above 75 GPa and of the sequence of structural phase transitions observed to 92 GPa.
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Submitted 15 March, 2012;
originally announced March 2012.
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Computationally-Driven Experimental Discovery of the CeIr$_4$In Compound
Authors:
D. J. Fredeman,
P. H. Tobash,
M. A. Torrez,
J. D. Thompson,
E. D. Bauer,
F. Ronning,
W. Tipton,
Sven P. Rudin,
R. G. Hennig
Abstract:
We present a combined experimental and computational methodology for the discovery of new materials. Density functional theory (DFT) formation energy calculations allow us to predict the stability of various hypothetical structures. We demonstrate this approach by computationally predicting the Ce-Ir-In ternary phase diagram. We predict previously-unknown compounds CeIr$_4$In and Ce$_2$Ir$_2$In to…
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We present a combined experimental and computational methodology for the discovery of new materials. Density functional theory (DFT) formation energy calculations allow us to predict the stability of various hypothetical structures. We demonstrate this approach by computationally predicting the Ce-Ir-In ternary phase diagram. We predict previously-unknown compounds CeIr$_4$In and Ce$_2$Ir$_2$In to be stable. Subsequently, we successfully synthesize CeIr$_4$In and characterize it by X-ray diffraction. Magnetization and heat capacity measurements of CeIr$_4$In are reported. The correct prediction and discovery of CeIr$_4$In validates this approach for discovering new materials.
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Submitted 11 March, 2011;
originally announced March 2011.
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Pressure-Induced Structure Transitions in Eu Metal to 92 GPa
Authors:
W. Bi,
Y. Meng,
R. S. Kumar,
A. L. Cornelius,
W. W. Tipton,
R. G. Hennig,
Y. Zhang,
C. Chen,
J. S. Schilling
Abstract:
Synchrotron x-ray diffraction experiments have been carried out on Eu metal at ambient temperature to pressures as high as 92 GPa (0.92 Mbar). Following the well-known bcc-to-hcp transition at 12 GPa, a mixed phase region is observed from 18 to 66 GPa until finally a single orthorhombic (Pnma) phase persists from 66 to 92 GPa. These results are compared to predictions from density functional theor…
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Synchrotron x-ray diffraction experiments have been carried out on Eu metal at ambient temperature to pressures as high as 92 GPa (0.92 Mbar). Following the well-known bcc-to-hcp transition at 12 GPa, a mixed phase region is observed from 18 to 66 GPa until finally a single orthorhombic (Pnma) phase persists from 66 to 92 GPa. These results are compared to predictions from density functional theory calculations. Under pressure the relatively large molar volume Vmol of divalent Eu is rapidly diminished, equaling or falling below Vmol(P) for neighboring trivalent lanthanides above 15 GPa. The present results suggest that above 15 GPa Eu is neither divalent nor fully trivalent to pressures as high as 92 GPa.
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Submitted 16 December, 2010;
originally announced December 2010.
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Accuracy of Quantum Monte Carlo Methods for Point Defects in Solids
Authors:
William D. Parker,
John W. Wilkins,
Richard G. Hennig
Abstract:
Quantum Monte Carlo approaches such as the diffusion Monte Carlo (DMC) method are among the most accurate many-body methods for extended systems. Their scaling makes them well suited for defect calculations in solids. We review the various approximations needed for DMC calculations of solids and the results of previous DMC calculations for point defects in solids. Finally, we present estimates of…
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Quantum Monte Carlo approaches such as the diffusion Monte Carlo (DMC) method are among the most accurate many-body methods for extended systems. Their scaling makes them well suited for defect calculations in solids. We review the various approximations needed for DMC calculations of solids and the results of previous DMC calculations for point defects in solids. Finally, we present estimates of how approximations affect the accuracy of calculations for self-interstitial formation energies in silicon and predict DMC values of 4.4(1), 5.1(1) and 4.7(1) eV for the X, T and H interstitial defects, respectively, in a 16(+1)-atom supercell.
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Submitted 16 June, 2010;
originally announced June 2010.
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Phase transformation in Si from semiconducting diamond to metallic beta-Sn phase in QMC and DFT under hydrostatic and anisotropic stress
Authors:
R. G. Hennig,
A. Wadehra,
K. P. Driver,
W. D. Parker,
C. J. Umrigar,
J. W. Wilkins
Abstract:
Silicon undergoes a phase transition from the semiconducting diamond phase to the metallic beta-Sn phase under pressure. We use quantum Monte Carlo calculations to predict the transformation pressure and compare the results to density functional calculations employing the LDA, PBE, PW91, WC, AM05, PBEsol and HSE06 exchange-correlation functionals. Diffusion Monte Carlo predicts a transition pressu…
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Silicon undergoes a phase transition from the semiconducting diamond phase to the metallic beta-Sn phase under pressure. We use quantum Monte Carlo calculations to predict the transformation pressure and compare the results to density functional calculations employing the LDA, PBE, PW91, WC, AM05, PBEsol and HSE06 exchange-correlation functionals. Diffusion Monte Carlo predicts a transition pressure of 14.0 +- 1.0 GPa slightly above the experimentally observed transition pressure range of 11.3 to 12.6 GPa. The HSE06 hybrid functional predicts a transition pressure of 12.4 GPa in excellent agreement with experiments. Exchange-correlation functionals using the local-density approximation and generalized-gradient approximations result in transition pressures ranging from 3.5 to 10.0 GPa, well below the experimental values. The transition pressure is sensitive to stress anisotropy. Anisotropy in the stress along any of the cubic axes of the diamond phase of silicon lowers the equilibrium transition pressure and may explain the discrepancy between the various experimental values as well as the small overestimate of the quantum Monte Carlo transition pressure.
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Submitted 16 June, 2010;
originally announced June 2010.
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Classical potential describes martensitic phase transformations between the $α$, $β$ and $ω$ titanium phases
Authors:
R. G. Hennig,
T. J. Lenosky,
D. R. Trinkle,
S. P. Rudin,
J. W. Wilkins
Abstract:
A description of the martensitic transformations between the $α$, $β$ and $ω$ phases of titanium that includes nucleation and growth requires an accurate classical potential. Optimization of the parameters of a modified embedded atom potential to a database of density-functional calculations yields an accurate and transferable potential as verified by comparison to experimental and density funct…
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A description of the martensitic transformations between the $α$, $β$ and $ω$ phases of titanium that includes nucleation and growth requires an accurate classical potential. Optimization of the parameters of a modified embedded atom potential to a database of density-functional calculations yields an accurate and transferable potential as verified by comparison to experimental and density functional data for phonons, surface and stacking fault energies and energy barriers for homogeneous martensitic transformations. Molecular dynamics simulations map out the pressure-temperature phase diagram of titanium. For this potential the martensitic phase transformation between $α$ and $β$ appears at ambient pressure and 1200 K, between $α$ and $ω$ at ambient conditions, between $β$ and $ω$ at 1200 K and pressures above 8 GPa, and the triple point occurs at 8GPa and 1200 K. Molecular dynamics explorations of the dynamics of the martensitic $α-ω$ transformation show a fast-moving interface with a low interfacial energy of 30 meV/Å$^2$. The potential is applicable to the study of defects and phase transformations of Ti.
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Submitted 12 June, 2007;
originally announced June 2007.
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Alleviation of the Fermion-sign problem by optimization of many-body wave functions
Authors:
C. J. Umrigar,
Julien Toulouse,
Claudia Filippi,
S. Sorella,
R. G. Hennig
Abstract:
We present a simple, robust and highly efficient method for optimizing all parameters of many-body wave functions in quantum Monte Carlo calculations, applicable to continuum systems and lattice models. Based on a strong zero-variance principle, diagonalization of the Hamiltonian matrix in the space spanned by the wav e function and its derivatives determines the optimal parameters. It systemati…
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We present a simple, robust and highly efficient method for optimizing all parameters of many-body wave functions in quantum Monte Carlo calculations, applicable to continuum systems and lattice models. Based on a strong zero-variance principle, diagonalization of the Hamiltonian matrix in the space spanned by the wav e function and its derivatives determines the optimal parameters. It systematically reduces the fixed-node error, as demonstrated by the calculation of the binding energy of the small but challenging C$_2$ molecule to the experimental accuracy of 0.02 eV.
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Submitted 8 November, 2006; v1 submitted 3 November, 2006;
originally announced November 2006.
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Fast Diffusion Mechanism of Silicon Tri-interstitial Defects
Authors:
Yaojun A. Du,
Stephen A. Barr,
Kaden R. A. Hazzard,
Thomas J. Lenosky,
Richard G. Hennig,
John W. Wilkins
Abstract:
We reveal the microscopic self-diffusion process of compact tri-interstitials in silicon using a combination of molecular dynamics and nudged elastic band methods. We find that the compact tri-interstitial moves by a collective displacement, involving both translation and rotation, of five atoms in a screw-like motion along $[111]$ directions. The elucidation of this pathway demonstrates the uti…
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We reveal the microscopic self-diffusion process of compact tri-interstitials in silicon using a combination of molecular dynamics and nudged elastic band methods. We find that the compact tri-interstitial moves by a collective displacement, involving both translation and rotation, of five atoms in a screw-like motion along $[111]$ directions. The elucidation of this pathway demonstrates the utility of combining tight-binding molecular dynamics with \textit{ab initio} density functional calculations to probe diffusion mechanisms. Using density functional theory to obtain diffusion barriers and the prefactor, we calculate a diffusion constant of $ 4 \cdot 10^{-5} \exp (- 0.49 {\rm eV} / k_{B} T) {\rm cm^2/s} $. Because of the low diffusion barrier, $I_{3}^{b}$ diffusion may be an important process under conditions such as ion implantation that creates excess interstitials, hence favoring formation of interstitial clusters.
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Submitted 18 June, 2005; v1 submitted 18 March, 2005;
originally announced March 2005.
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An Empirical Tight-Binding Model for Titanium Phase Transformations
Authors:
D. R. Trinkle,
M. D. Jones,
R. G. Hennig,
S. P. Rudin,
R. C. Albers,
J. W. Wilkins
Abstract:
For a previously published study of the titanium hcp (alpha) to omega (omega) transformation, a tight-binding model was developed for titanium that accurately reproduces the structural energies and electron eigenvalues from all-electron density-functional calculations. We use a fitting method that matches the correctly symmetrized wavefuctions of the tight-binding model to those of the density-f…
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For a previously published study of the titanium hcp (alpha) to omega (omega) transformation, a tight-binding model was developed for titanium that accurately reproduces the structural energies and electron eigenvalues from all-electron density-functional calculations. We use a fitting method that matches the correctly symmetrized wavefuctions of the tight-binding model to those of the density-functional calculations at high symmetry points. The structural energies, elastic constants, phonon spectra, and point-defect energies predicted by our tight-binding model agree with density-functional calculations and experiment. In addition, a modification to the functional form is implemented to overcome the "collapse problem" of tight-binding, necessary for phase transformation studies and molecular dynamics simulations. The accuracy, transferability and efficiency of the model makes it particularly well suited to understanding structural transformations in titanium.
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Submitted 26 February, 2005;
originally announced February 2005.
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Systematic pathway generation and sorting in martensitic transformations: Titanium alpha to omega
Authors:
D. R. Trinkle,
D. M. Hatch,
H. T. Stokes,
R. G. Hennig,
R. C. Albers
Abstract:
Structural phase transitions are governed by the underlying atomic transformation mechanism; martensitic transformations can be separated into strain and shuffle components. A systematic pathway generation and sorting algorithm is presented and applied to the problem of the titanium alpha to omega transformation under pressure. In this algorithm, all pathways are constructed within a few geometr…
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Structural phase transitions are governed by the underlying atomic transformation mechanism; martensitic transformations can be separated into strain and shuffle components. A systematic pathway generation and sorting algorithm is presented and applied to the problem of the titanium alpha to omega transformation under pressure. In this algorithm, all pathways are constructed within a few geometric limits, and efficiently sorted by their energy barriers. The geometry and symmetry details of the seven lowest energy barrier pathways are given. The lack of a single simple geometric criterion for determining the lowest energy pathway shows the necessity of atomistic studies for pathway determination.
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Submitted 11 January, 2005;
originally announced January 2005.
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Impurities block the alpha to omega martensitic transformation in titanium
Authors:
R. G. Hennig,
D. R. Trinkle,
J. Bouchet,
S. G. Srinivasan,
R. C. Albers,
J. W. Wilkins
Abstract:
The onset and kinetics of martensitic transformations are controlled by impurities trapped during the transformation. For the alpha to omega transformation in Ti, ab initio methods yield the changes in both the relative stability of and energy barrier between the phases. Using the recently discovered transformation pathway, we study interstitial O, N, C; substitutional Al and V; and Ti interstit…
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The onset and kinetics of martensitic transformations are controlled by impurities trapped during the transformation. For the alpha to omega transformation in Ti, ab initio methods yield the changes in both the relative stability of and energy barrier between the phases. Using the recently discovered transformation pathway, we study interstitial O, N, C; substitutional Al and V; and Ti interstitials and vacancies. The resulting microscopic picture explains the observations, specifically the suppression of the transformation in A-70 and Ti-6Al-4V titanium alloys.
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Submitted 5 September, 2003;
originally announced September 2003.
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A New Mechanism for the Alpha to Omega Martensitic Transformation in Pure Titanium
Authors:
D. R. Trinkle,
R. G. Hennig,
S. G. Srinivasan,
D. M. Hatch,
M. D. Jones,
H. T. Stokes,
R. C. Albers,
J. W. Wilkins
Abstract:
We propose a new direct mechanism for the pressure driven alpha to omega martensitic transformation in pure titanium. A systematic algorithm enumerates all possible mechanisms whose energy barriers are evaluated. A new, homogeneous mechanism emerges with a barrier at least four times lower than other mechanisms. This mechanism remains favorable in a simple nucleation model.
We propose a new direct mechanism for the pressure driven alpha to omega martensitic transformation in pure titanium. A systematic algorithm enumerates all possible mechanisms whose energy barriers are evaluated. A new, homogeneous mechanism emerges with a barrier at least four times lower than other mechanisms. This mechanism remains favorable in a simple nucleation model.
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Submitted 7 January, 2003;
originally announced January 2003.
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Electronic Structure of Dangling Bonds in Amorphous Silicon Studied via a Density-Matrix Functional Method
Authors:
R. G. Hennig,
P. A. Fedders,
A. E. Carlsson
Abstract:
A structural model of hydrogenated amorphous silicon containing an isolated dangling bond is used to investigate the effects of electron interactions on the electronic level splittings, localization of charge and spin, and fluctuations in charge and spin. These properties are calculated with a recently developed density-matrix correlation-energy functional applied to a generalized Anderson Hamil…
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A structural model of hydrogenated amorphous silicon containing an isolated dangling bond is used to investigate the effects of electron interactions on the electronic level splittings, localization of charge and spin, and fluctuations in charge and spin. These properties are calculated with a recently developed density-matrix correlation-energy functional applied to a generalized Anderson Hamiltonian, consisting of tight-binding one-electron terms parametrizing hydrogenated amorphous silicon plus a local interaction term. The energy level splittings approach an asymptotic value for large values of the electron-interaction parameter U, and for physically relevant values of U are in the range 0.3-0.5 eV. The electron spin is highly localized on the central orbital of the dangling bond while the charge is spread over a larger region surrounding the dangling bond site. These results are consistent with known experimental data and previous density-functional calculations. The spin fluctuations are quite different from those obtained with unrestricted Hartree-Fock theory.
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Submitted 21 June, 2002;
originally announced June 2002.
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Icosahedral Ti-Zr-Ni: A groundstate quasicrystal?
Authors:
R. G. Hennig,
A. E. Carlsson,
K. F. Kelton,
C. L. Henley
Abstract:
The first complete ab initio zero-temperature ternary phase diagram is constructed from the calculated energies of the elemental, binary and ternary Ti-Zr-Ni phases; for this, the icosahedral i-TiZrNi quasicrystal phase is approximated by periodic structures of up to 123 atoms/unit cell, based on a decorated-tiling model. The approximant structures containing the 45-atom Bergman cluster were nea…
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The first complete ab initio zero-temperature ternary phase diagram is constructed from the calculated energies of the elemental, binary and ternary Ti-Zr-Ni phases; for this, the icosahedral i-TiZrNi quasicrystal phase is approximated by periodic structures of up to 123 atoms/unit cell, based on a decorated-tiling model. The approximant structures containing the 45-atom Bergman cluster were nearly degenerate, and stable against the competing binary phases. It is speculated that i-TiZrNi may be a ground state quasicrystal, as it is experimentally the low-temperature phase for its composition.
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Submitted 9 May, 2002;
originally announced May 2002.
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Structure of the icosahedral Ti-Zr-Ni quasicrystal
Authors:
R. G. Hennig,
K. F. Kelton,
A. E. Carlsson,
C. L. Henley
Abstract:
The atomic structure of the icosahedral Ti-Zr-Ni quasicrystal is determined by invoking similarities to periodic crystalline phases, diffraction data and the results from ab initio calculations. The structure is modeled by decorations of the canonical cell tiling geometry. The initial decoration model is based on the structure of the Frank-Kasper phase W-TiZrNi, the 1/1 approximant structure of…
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The atomic structure of the icosahedral Ti-Zr-Ni quasicrystal is determined by invoking similarities to periodic crystalline phases, diffraction data and the results from ab initio calculations. The structure is modeled by decorations of the canonical cell tiling geometry. The initial decoration model is based on the structure of the Frank-Kasper phase W-TiZrNi, the 1/1 approximant structure of the quasicrystal. The decoration model is optimized using a new method of structural analysis combining a least-squares refinement of diffraction data with results from ab initio calculations. The resulting structural model of icosahedral Ti-Zr-Ni is interpreted as a simple decoration rule and structural details are discussed.
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Submitted 27 February, 2002;
originally announced February 2002.