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Spin-Orbit Torque Engineering in β-W/CoFeB Heterostructures via Ta and V Alloying at Interfaces
Authors:
Gyu Won Kim,
Do Duc Cuong,
Yong Jin Kim,
In Ho Cha,
Taehyun Kim,
Min Hyeok Lee,
OukJae Lee,
Hionsuck Baik,
Soon Cheol Hong,
Sonny H. Rhim,
Young Keun Kim
Abstract:
Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice, materials with a high spin Hall angle, i.e., a charge-to-spin conversion efficiency, are indispensable. To date, very few approaches have been made to devise new nonma…
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Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice, materials with a high spin Hall angle, i.e., a charge-to-spin conversion efficiency, are indispensable. To date, very few approaches have been made to devise new nonmagnetic metal alloys. Moreover, new materials need to be compatible with semiconductor processing. Here we introduce W-Ta and W-V alloys and deploy them at the interface between $β$-W/CoFeB layers. First, spin Hall conductivities of W-Ta and W-V structures with various compositions are carried out by first-principles band calculations, which predict the spin Hall conductivity of the W-V alloy is improved from $-0.82 \times 10^3$ S/cm that of W to $-1.98 \times 10^3$ S/cm. Subsequently, heterostructure fabrication and spin-orbit torque properties are characterized experimentally. By alloying $β$-W with V at a concentration of 20 at%, we observe a large enhancement of the absolute value of spin Hall conductivity of up to $-(2.77 \pm 0.31) \times 10^3$ S/cm. By employing X-ray diffraction and scanning transmission electron microscopy, we further explain the enhancement of spin-orbit torque efficiency is stemmed from W-V alloy between W and CoFeB.
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Submitted 9 June, 2021;
originally announced June 2021.
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Anisotropic Behavior of Excitons in Single Crystal α-SnS
Authors:
Van Long Le,
Do Duc Cuong,
Hoang Tung Nguyen,
Xuan Au Nguyen,
Bogyu Kim,
Kyujin Kim,
Wonjun Lee,
Soon Cheol Hong,
Tae Jung Kim,
Young Dong Kim
Abstract:
We investigate analytically the anisotropic dielectric properties of single crystal α-SnS near the fundamental absorption edge by considering atomic orbitals. Most striking is the excitonic feature in the armchair- (b-) axis direction, which is particularly prominent at low temperatures. To determine the origin of this anisotropy, we perform first-principles calculations using the GW0 Bethe-Salpet…
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We investigate analytically the anisotropic dielectric properties of single crystal α-SnS near the fundamental absorption edge by considering atomic orbitals. Most striking is the excitonic feature in the armchair- (b-) axis direction, which is particularly prominent at low temperatures. To determine the origin of this anisotropy, we perform first-principles calculations using the GW0 Bethe-Salpeter equation (BSE) including the electron-hole interaction. The results show that the anisotropic dielectric characteristics are a direct result of the natural anisotropy of p orbitals. In particular, this dominant excitonic feature originates from the py orbital at the saddle point in the Γ-Y region.
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Submitted 7 July, 2020;
originally announced July 2020.
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Enhanced voltage-controlled magnetic anisotropy via magneto-elasticity in FePt/MgO(001)
Authors:
Qurat-ul-ain,
Dorj Odkhuu,
S. H. Rhim,
Soon Cheol Hong
Abstract:
The interplay between magneto-electricity (ME) and magneto-elasticity (MEL) is studied in the context of voltage-controlled magnetic anisotropy (VCMA). Strain plays more than a role of changing lattice constant but that of the internal electric field in the heterostructure. As a prototype, FePt/MgO(001) is visited, where the behavior of two interfaces are drastically different: one exhibits switch…
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The interplay between magneto-electricity (ME) and magneto-elasticity (MEL) is studied in the context of voltage-controlled magnetic anisotropy (VCMA). Strain plays more than a role of changing lattice constant but that of the internal electric field in the heterostructure. As a prototype, FePt/MgO(001) is visited, where the behavior of two interfaces are drastically different: one exhibits switching the other does not. Whether an external electric field ($E_{ext}$) is present or not, we found VCMA coefficient larger than 1 pJ/V$\cdot$m, as a consequence of the rearrangement of $d$ orbitals with $m=\pm1$ and $\pm2$ in response to an external electric field. In addition, magneto-crystalline anisotropy (MA) is analyzed with strain taken into account, where non-linear feature is presented only accountable by invoking second-order MEL.
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Submitted 6 January, 2020;
originally announced January 2020.
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Tunability of Magnetic Anisotropy of Co on Two-Dimensional Materials by Tetrahedral Bonding
Authors:
D. Odkhuu,
T. Tsevelmaa,
P. Taivansaikhan,
N. Park,
S. C. Hong,
S. H. Rhim
Abstract:
Pairing of $π$ electronic state structures with functional or metallic atoms makes them possible to engineer physical and chemical properties. Herein, we predict the reorientation of magnetization of Co on hexagonal BN (h-BN) and graphene multilayers. The driving mechanism is the formation of the tetrahedral bonding between sp$^3$ and d orbitals at the interface. More specifically, the intrinsic…
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Pairing of $π$ electronic state structures with functional or metallic atoms makes them possible to engineer physical and chemical properties. Herein, we predict the reorientation of magnetization of Co on hexagonal BN (h-BN) and graphene multilayers. The driving mechanism is the formation of the tetrahedral bonding between sp$^3$ and d orbitals at the interface. More specifically, the intrinsic $π$-bonding of h-BN and graphene is transformed to sp$^3$ as a result of strong hybridization with metallic $d_{z^2}$ orbital. The different features of these two tetrahedral bondings, sp$^2$ and sp$^3$, are well manifested in charge density and density of states in the vicinity of the interface, along with associated band structure near the $\bar{K}$ valley. Our findings provide a novel approach to tailoring magnetism by means of degree of the interlayer hybrid bonds in 2D layered materials.
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Submitted 11 January, 2019;
originally announced January 2019.
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Tunable Magnetism of Transition Metal Nanostructures by Hydrogenated Graphene
Authors:
T. Tsevelmaa,
Chunfeng,
D. Odkhuu,
N. Tsogbadrakh,
S. C. Hong
Abstract:
Controlling magnetism of transition metal atoms by pairing with $π$ electronic states of graphene is intriguing. Herein, through first - principle computation we explore the possibility of switching magnetization by forming the tetrahedral $sp^3$ - metallic $d$ hybrid bonds. Graphene multilayers capped by single - layer cobalt atoms can transform into the $sp^3$ - bonded diamond films upon the hyd…
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Controlling magnetism of transition metal atoms by pairing with $π$ electronic states of graphene is intriguing. Herein, through first - principle computation we explore the possibility of switching magnetization by forming the tetrahedral $sp^3$ - metallic $d$ hybrid bonds. Graphene multilayers capped by single - layer cobalt atoms can transform into the $sp^3$ - bonded diamond films upon the hydrogenation of the bottom surface. While the conversion is favored by hybridization between the $sp^3$ dangling bonds and metallic $d_{z^2}$ states, such a strong hybridization can lead to the reorientation of magnetization easy axis of cobalt adatoms in plane to perpendicular. The further investigations identify that this anisotropic magnetization even can be modulated upon the change in charge carrier density, suggesting the possibility of an electric - field control of magnetization reorientation. These results provide a novel alternative that would represent tailoring magnetism by means of degree of the interlayer hybrid bonds in the layered materials.
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Submitted 13 October, 2018;
originally announced October 2018.
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Inducing and Manipulating Magnetization in Two-Dimensional ZnO by Strain and External Gating
Authors:
P. Taivansaikhan,
T. Tsevelmaa,
S. H. Rhim,
S. C. Hong,
D. Odkhuu
Abstract:
Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies reveal the critical impacts of strain and external gating on vacancy-induced magnetism and its spin direction in a graphene-like single layer of zinc oxide (ZnO). In…
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Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies reveal the critical impacts of strain and external gating on vacancy-induced magnetism and its spin direction in a graphene-like single layer of zinc oxide (ZnO). In contrast to the pristine and defective ZnO with an O-vacancy, the presence of a Zn-vacancy induces significant magnetic moments to its first neighboring O and Zn atoms due to the charge deficit. We further predict that the direction of magnetization easy axis reverses from an in-plane to perpendicular orientation under a practically achieved biaxial compressive strain of $\sim$1--2\% or applying an electric-field by means of the charge density modulation. This magnetization reversal is driven by the strain- and electric-field-induced changes in the spin-orbit coupled \emph{d} states of the first-neighbor Zn atom to the Zn-vacancy. These findings open interesting prospects for exploiting strain and electric-field engineering to manipulate magnetism and magnetization orientation of two-dimensional materials.
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Submitted 5 December, 2017;
originally announced December 2017.
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Density Functional Theory study on the electronic structure and thermoelectric properties of strained Mn4Si7
Authors:
Do Duc Cuong,
JinSik Park,
S. H. Rhim,
Soon Cheol Hong
Abstract:
The strain effect on electronic structure and thermoelectric properties of Higher Manganese Silicides (HMSs) Mn4Si7 was studied using Density Functional Theory (DFT) and through solving Boltzman Transport Equation (BTE). We found that the tensile strain attempts to reduce the band gap while the compressive strain not much affect to band gap. The Seebeck coeficient was found to be increased with in…
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The strain effect on electronic structure and thermoelectric properties of Higher Manganese Silicides (HMSs) Mn4Si7 was studied using Density Functional Theory (DFT) and through solving Boltzman Transport Equation (BTE). We found that the tensile strain attempts to reduce the band gap while the compressive strain not much affect to band gap. The Seebeck coeficient was found to be increased with increasing temperature, which is very consistent to experiments. The electrical conductivity and power factor show highly degree of anisotropy, where in-plane direction is more dominant. The different behavior of electrical conductivity along in-plane and outof plane direction was explained due to the change of band dispersion in the valence band maximum (VBM).
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Submitted 12 May, 2016;
originally announced May 2016.
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Surface-termination dependent magnetism and strong perpendicular magnetocrystalline anisotropy of a FeRh (001) thin film: A density-functional study
Authors:
Soyoung Jekal,
S. H. Rhim,
Soon Cheol Hong,
Won-joon Son,
Alexander B. Shick
Abstract:
Magnetism of FeRh (001) films strongly depends on film thickness and surface terminations. While magnetic ground state of bulk FeRh is G-type antiferromagnetism, the Rh-terminated films exhibit ferromagnetism with strong perpendicular MCA whose energy +2.1 meV/$\Box$ is two orders of magnitude greater than 3$d$ magnetic metals, where $\Box$ is area of two-dimensional unit cell. While Goodenough-Ka…
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Magnetism of FeRh (001) films strongly depends on film thickness and surface terminations. While magnetic ground state of bulk FeRh is G-type antiferromagnetism, the Rh-terminated films exhibit ferromagnetism with strong perpendicular MCA whose energy +2.1 meV/$\Box$ is two orders of magnitude greater than 3$d$ magnetic metals, where $\Box$ is area of two-dimensional unit cell. While Goodenough-Kanamori-Anderson rule on the superexchange interaction is crucial in determining the magnetic ground phases of FeRh bulk and thin films, the magnetic phases are results of interplay and competition between three mechanisms - the superexchange interaction, the Zener direct-interaction, and magnetic energy gain.
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Submitted 17 May, 2015; v1 submitted 28 April, 2015;
originally announced April 2015.
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Jahn-Teller driven perpendicular magnetocrystalline anisotropy in metastable Ruthenium
Authors:
Dorj Odkhuu,
S. H. Rhim,
N. Park,
Kohji Nakamura,
S. C. Hong
Abstract:
A new metastable phase of the body-centered-tetragonal ruthenium ({\em bct}--Ru) is identified to exhibit a large perpendicular magnetocrystalline anisotropy (PMCA), whose energy, $E_{MCA}$, is as large as 150 $μ$eV/atom, two orders of magnitude greater than those of 3$d$ magnetic metals. Further investigation over the range of tetragonal distortion suggests that the appearance of the magnetism in…
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A new metastable phase of the body-centered-tetragonal ruthenium ({\em bct}--Ru) is identified to exhibit a large perpendicular magnetocrystalline anisotropy (PMCA), whose energy, $E_{MCA}$, is as large as 150 $μ$eV/atom, two orders of magnitude greater than those of 3$d$ magnetic metals. Further investigation over the range of tetragonal distortion suggests that the appearance of the magnetism in the {\em bct}--Ru is governed by the Jahn-Teller spit $e_g$ orbitals. Moreover, from band analysis, MCA is mainly determined by an interplay between two $e_g$ states, $d_{x^2-y^2}$ and $d_{z^2}$ states, as a result of level reversal associated with tetragonal distortion.
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Submitted 16 January, 2015; v1 submitted 2 May, 2014;
originally announced May 2014.
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Vacancy-induced magnetism in SnO$_{2}$: A density functional study
Authors:
Gul Rahman,
Víctor M. García-Suárez,
Soon Cheol Hong
Abstract:
We study the magnetic and electronic properties of defects in SnO$_{2}$ using pseudopotential and all electron methods. Our calculations show that bulk SnO$_{2}$ is non-magnetic, but it shows magnetism with a magnetic moment around 4.00 $μ_{B}$ due to Sn vacancy (V$_\mathrm{Sn}$). The magnetic moment comes mainly from O atoms surrounding V$_\mathrm{Sn}$ and Sn atoms, which couple antiferromagnet…
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We study the magnetic and electronic properties of defects in SnO$_{2}$ using pseudopotential and all electron methods. Our calculations show that bulk SnO$_{2}$ is non-magnetic, but it shows magnetism with a magnetic moment around 4.00 $μ_{B}$ due to Sn vacancy (V$_\mathrm{Sn}$). The magnetic moment comes mainly from O atoms surrounding V$_\mathrm{Sn}$ and Sn atoms, which couple antiferromagnetically with the O atoms in the presence of V$_\mathrm{Sn}$. The coupling between different Sn vacancies is also studied and we find that these defects not only couple ferromagnetically but also antiferromagnetically and ferrimagnetically. Our calculations demonstrate that the experimentally observed giant magnetic moment of transition metal doped SnO$_{2}$ can be attributed to V$_\mathrm{Sn}$.
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Submitted 15 October, 2008;
originally announced October 2008.
