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Spin Relaxation in Quasi-1D GaAs Mesowires: Control via Electric Field and Aspect Ratio
Authors:
Stefania Castelletto,
ChanJu You,
Deborah L. Gater,
A. F. Isakovic
Abstract:
We report on the measurements of spin relaxation in GaAs quasi-one-dimensional mesowires, relying on spin noise spectroscopy, thus adding to the existing body of spin relaxation studies in bulk, two-dimensional and zero dimensional systems. In addition to temperature and magnetic field dependence, we modify the spin relaxation time via applied electric field and aspect ratio of the mesowires, sugg…
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We report on the measurements of spin relaxation in GaAs quasi-one-dimensional mesowires, relying on spin noise spectroscopy, thus adding to the existing body of spin relaxation studies in bulk, two-dimensional and zero dimensional systems. In addition to temperature and magnetic field dependence, we modify the spin relaxation time via applied electric field and aspect ratio of the mesowires, suggesting that scalable spintronics devices with controllable spin relaxation are achievable. Overall, we observed higher spin-relaxation time in mesowires compared to bulk with a spin noise exhibiting Dyakonov-Perel scattering and other scattering behavior. Spectral spin noise data are interpreted in part via Glazov-Sherman model, where both, diffusive and ballistic spin relaxation are accounted for.
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Submitted 16 November, 2021;
originally announced November 2021.
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Layered, Tunable Graphene Oxide-Nylon Heterostructures for Wearable Electrocardiogram Sensors
Authors:
Nicholas G. Hallfors,
Dejan Maksimovski,
Ilyas A. H. Farhat,
Maguy Abi Jaoude,
Aarthi R. Devarajan,
Kin Liao,
Mohammed Ismail,
H. Pade,
R. Y. Adhikari,
Abdel F. Isakovic
Abstract:
Nanoscale engineered materials combined with wearable wireless technologies can deliver a new level of health monitoring. A reduced graphene oxide-nylon composite material is developed and tested, demonstrating its usefulness as a material for sensors in wearable, long-term electrocardiogram (ECG) monitoring via a comparison to one of the widely used ECG sensors. The structural analysis by scannin…
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Nanoscale engineered materials combined with wearable wireless technologies can deliver a new level of health monitoring. A reduced graphene oxide-nylon composite material is developed and tested, demonstrating its usefulness as a material for sensors in wearable, long-term electrocardiogram (ECG) monitoring via a comparison to one of the widely used ECG sensors. The structural analysis by scanning electron (SEM) and atomic force microscopy (AFM) shows a limited number of defects on a macroscopic scale. Fourier Transform Infrared (FTIR) and Raman spectroscopy confirm the presence of rGOx, and the ratio of D- and G-features as a function of thickness correlates with the resistivity analysis. The negligible effect of the defects and the tunability of electrical and optical properties, together with live ECG data, demonstrate its signal transduction capability.
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Submitted 2 August, 2022; v1 submitted 26 September, 2021;
originally announced September 2021.
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Ni3Si2 Nanowires for Efficient Electron Field Emission and Limitations of the Fowler-Nordheim Model
Authors:
Amina B. Belkadi,
Emma Zeng,
A. F. Isakovic
Abstract:
The paper reports on top-down nanofabricated Ni3Si2 nanowires and tests of their electron field emission capabilities. The results include low turn on electric field, moderate work function, and the field enhancement factor, customizable through nanofabrication. The paper also reports on the issues ahead in the field of nanowires-based electron mission, as there are quantitative limitations of the…
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The paper reports on top-down nanofabricated Ni3Si2 nanowires and tests of their electron field emission capabilities. The results include low turn on electric field, moderate work function, and the field enhancement factor, customizable through nanofabrication. The paper also reports on the issues ahead in the field of nanowires-based electron mission, as there are quantitative limitations of the applicability of the Fowler-Nordheim model, which will become increasingly apparent as we continue to optimize field emission of electrons. To this end, we suggest adding the studies of surface-to-volume ratio effects of the nanowires as another standard for comparison, in order to lead to the input form of the density of states as quantum effects becoming more prominent.
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Submitted 21 December, 2021; v1 submitted 26 September, 2021;
originally announced September 2021.
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A Virtual Young's Double Slit Experiment for Hard X-ray Photons
Authors:
A. F. Isakovic,
A. Stein,
J. B. Warren,
A. R. Sandy,
S. Narayanan,
M. Sprung,
J. M. Ablett,
D. P. Siddons,
M. Metzler,
K. Evans-Lutterodt
Abstract:
We have implemented a virtual Young's double slit experiment for hard X-ray photons with micro-fabricated bi-prisms. We observe fringe patterns with a scintillator, and quantify interferograms by detecting X-ray fluorescence from a scanned 30nm Cr metal film. The observed intensities are best modeled with a near-field, Fresnel analysis. The maximum fringe number in the overlap region is proporti…
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We have implemented a virtual Young's double slit experiment for hard X-ray photons with micro-fabricated bi-prisms. We observe fringe patterns with a scintillator, and quantify interferograms by detecting X-ray fluorescence from a scanned 30nm Cr metal film. The observed intensities are best modeled with a near-field, Fresnel analysis. The maximum fringe number in the overlap region is proportional to the ratio of real to imaginary parts refractive index of the prism material. The horizontal and vertical transverse coherence lengths at beamline APS 8-ID are measured.
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Submitted 28 October, 2009;
originally announced October 2009.
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Electron Spin Dynamics and Hyperfine Interactions in Fe/Al_0.1Ga_0.9As/GaAs Spin Injection Heterostructures
Authors:
J. Strand,
X. Lou,
C. Adelmann,
B. D. Schultz,
A. F. Isakovic,
C. J. Palmstrom,
P. A. Crowell
Abstract:
We have studied hyperfine interactions between spin-polarized electrons and lattice nuclei in Al_0.1Ga_0.9As/GaAs quantum well (QW) heterostructures. The spin-polarized electrons are electrically injected into the semiconductor heterostructure from a metallic ferromagnet across a Schottky tunnel barrier. The spin-polarized electron current dynamically polarizes the nuclei in the QW, and the pola…
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We have studied hyperfine interactions between spin-polarized electrons and lattice nuclei in Al_0.1Ga_0.9As/GaAs quantum well (QW) heterostructures. The spin-polarized electrons are electrically injected into the semiconductor heterostructure from a metallic ferromagnet across a Schottky tunnel barrier. The spin-polarized electron current dynamically polarizes the nuclei in the QW, and the polarized nuclei in turn alter the electron spin dynamics. The steady-state electron spin is detected via the circular polarization of the emitted electroluminescence. The nuclear polarization and electron spin dynamics are accurately modeled using the formalism of optical orientation in GaAs. The nuclear spin polarization in the QW is found to depend strongly on the electron spin polarization in the QW, but only weakly on the electron density in the QW. We are able to observe nuclear magnetic resonance (NMR) at low applied magnetic fields on the order of a few hundred Oe by electrically modulating the spin injected into the QW. The electrically driven NMR demonstrates explicitly the existence of a Knight field felt by the nuclei due to the electron spin.
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Submitted 5 January, 2005;
originally announced January 2005.
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Nuclear Magnetic Resonance in a Ferromagnet-Semiconductor Heterostructure
Authors:
J. Strand,
B. D. Schultz,
A. F. Isakovic,
X. Lou,
C. J. Palmstrom,
P. A. Crowell
Abstract:
We report the observation of nuclear magnetic resonance (NMR) in a ferromagnet-semiconductor heterostructure in the presence of a spin-polarized current. Spin-polarized electrons injected from a metallic ferromagnet generate a large nuclear spin population in a GaAs quantum well by dynamic polarization. The characteristic time for the polarization process is approximately 20 sec, and the nuclear…
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We report the observation of nuclear magnetic resonance (NMR) in a ferromagnet-semiconductor heterostructure in the presence of a spin-polarized current. Spin-polarized electrons injected from a metallic ferromagnet generate a large nuclear spin population in a GaAs quantum well by dynamic polarization. The characteristic time for the polarization process is approximately 20 sec, and the nuclear polarization can persist for several minutes after the current is turned off. Resonant depolarization is observed in the presence of an AC magnetic field or when the injection current is modulated at the NMR frequency.
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Submitted 21 July, 2003;
originally announced July 2003.
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Dynamical Nuclear Polarization by Electrical Spin Injection in Ferromagnet-Semiconductor Heterostructures
Authors:
J. Strand,
B. D. Schultz,
A. F. Isakovic,
C. J. Palmstrom,
P. A. Crowell
Abstract:
Electrical spin injection from Fe into Al$_x$Ga$_{1-x}$As quantum well heterostructures is demonstrated in small (< 500 Oe) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal magnetic field in the semiconductor. This field is much larger than the applied field and depends strongly on the injection current density. Details of…
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Electrical spin injection from Fe into Al$_x$Ga$_{1-x}$As quantum well heterostructures is demonstrated in small (< 500 Oe) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal magnetic field in the semiconductor. This field is much larger than the applied field and depends strongly on the injection current density. Details of the observed hysteresis in the spin injection signal are reproduced in a model that incorporates the magnetocrystalline anisotropy of the epitaxial Fe film, spin relaxation in the semiconductor, and the dynamical polarization of nuclei by the injected spins.
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Submitted 19 February, 2003;
originally announced February 2003.
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Optical Pumping in Ferromagnet-Semiconductor Heterostructures: Magneto-optics and Spin Transport
Authors:
A. F. Isakovic,
D. M. Carr,
J. Strand,
B. D. Schultz,
C. J. Palmstrom,
P. A. Crowell
Abstract:
Epitaxial ferromagnetic metal - semiconductor heterostructures are investigated using polarization-dependent electroabsorption measurements on GaAs p-type and n-type Schottky diodes with embedded In1-xGaxAs quantum wells. We have conducted studies as a function of photon energy, bias voltage, magnetic field, and excitation geometry. For optical pumping with circularly polarized light at energies…
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Epitaxial ferromagnetic metal - semiconductor heterostructures are investigated using polarization-dependent electroabsorption measurements on GaAs p-type and n-type Schottky diodes with embedded In1-xGaxAs quantum wells. We have conducted studies as a function of photon energy, bias voltage, magnetic field, and excitation geometry. For optical pumping with circularly polarized light at energies above the band edge of GaAs, photocurrents with spin polarizations on the order of 1 % flow from the semiconductor to the ferromagnet under reverse bias. For optical pumping at normal incidence, this polarization may be enhanced significantly by resonant excitation at the quantum well ground-state. Measurements in a side-pumping geometry, in which the ferromagnet can be saturated in very low magnetic fields, show hysteresis that is also consistent with spin-dependent transport. Magneto-optical effects that influence these measurements are discussed.
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Submitted 18 August, 2001;
originally announced August 2001.
