Showing 1–41 of 41 results for author: Ju, S

High-throughput discovery of metal oxides with high thermoelectric performance via interpretable feature engineering on small data

Authors: Shengluo Ma, Yongchao Rao, Xiang Huang, Shenghong Ju

Abstract: In this work, we have proposed a data-driven screening framework combining the interpretable machine learning with high-throughput calculations to identify a series of metal oxides that exhibit both high-temperature tolerance and high power factors. Aiming at the problem of weak generalization ability of small data with power factors at high temperatures, we employ symbolic regression for feature… ▽ More In this work, we have proposed a data-driven screening framework combining the interpretable machine learning with high-throughput calculations to identify a series of metal oxides that exhibit both high-temperature tolerance and high power factors. Aiming at the problem of weak generalization ability of small data with power factors at high temperatures, we employ symbolic regression for feature creation which enhances the robustness of the model while preserving the physical meaning of features. 33 candidate metal oxides are finally targeted for high-temperature thermoelectric applications from a pool of 48,694 compounds in the Materials Project database. The Boltzmann transport theory is utilized to perform electrical transport properties calculations at 1,000 K. The relaxation time is approximated by employing constant electron-phonon coupling based on the deformation potential theory. Considering band degeneracy, the electron group velocity is obtained using the momentum matrix element method, yielding 28 materials with power factors greater than 50 $μみゅーW cm^{-1} K^{-2} $. The high-throughput framework we proposed is instrumental in the selection of metal oxides for high-temperature thermoelectric applications. Furthermore, our data-driven analysis and transport calculation suggest that metal oxides rich in elements such as cerium (Ce), tin (Sn), and lead (Pb) tend to exhibit high power factors at high temperatures. △ Less

Submitted 30 April, 2024; originally announced April 2024.

Tutorial: AI-assisted exploration and active design of polymers with high intrinsic thermal conductivity

Authors: Xiang Huang, Shenghong Ju

Abstract: Designing polymers with high intrinsic thermal conductivity (TC) is critically important for the thermal management of organic electronics and photonics. However, this is a challenging task owing to the diversity of the chemical space and the barriers to advanced synthetic experiments/characterization techniques for polymers. In this Tutorial, the fundamentals and implementation of combining class… ▽ More Designing polymers with high intrinsic thermal conductivity (TC) is critically important for the thermal management of organic electronics and photonics. However, this is a challenging task owing to the diversity of the chemical space and the barriers to advanced synthetic experiments/characterization techniques for polymers. In this Tutorial, the fundamentals and implementation of combining classical molecular dynamics simulation and machine learning (ML) for the development of polymers with high TC are comprehensively introduced. We begin by describing the core components of a universal ML framework, involving polymer datasets, property calculators, feature engineering and informatics algorithms. Then, the process of constructing interpretable regression algorithms for TC prediction is introduced, aiming to extract the underlying relationships between microstructures and TCs for polymers. We also explore the design of sequence-ordered polymers with high TC using lightweight and mainstream active learning algorithms. Lastly, we conclude by addressing the current limitations and suggesting potential avenues for future research on this topic. △ Less

Submitted 23 March, 2024; originally announced March 2024.

Journal ref: Journal of Applied Physics 135, 171101, 2024

AI-assisted inverse design of sequence-ordered high intrinsic thermal conductivity polymers

Authors: Xiang Huang, C. Y. Zhao, Hong Wang, Shenghong Ju

Abstract: Artificial intelligence (AI) promotes the polymer design paradigm from a traditional trial-and-error approach to a data-driven style. Achieving high thermal conductivity (TC) for intrinsic polymers is urgent because of their importance in the thermal management of many industrial applications such as microelectronic devices and integrated circuits. In this work, we have proposed a robust AI-assist… ▽ More Artificial intelligence (AI) promotes the polymer design paradigm from a traditional trial-and-error approach to a data-driven style. Achieving high thermal conductivity (TC) for intrinsic polymers is urgent because of their importance in the thermal management of many industrial applications such as microelectronic devices and integrated circuits. In this work, we have proposed a robust AI-assisted workflow for the inverse design of high TC polymers. By using 1144 polymers with known computational TCs, we construct a surrogate deep neural network model for TC prediction and extract a polymer-unit library with 32 sequences. Two state-of-the-art multi-objective optimization algorithms of unified non-dominated sorting genetic algorithm III (U-NSGA-III) and q-noisy expected hypervolume improvement (qNEHVI) are employed for sequence-ordered polymer design with both high TC and synthetic possibility. For triblock polymer design, the result indicates that qNHEVI is capable of exploring a diversity of optimal polymers at the Pareto front, but the uncertainty in Quasi-Monte Carlo sampling makes the trials costly. The performance of U-NSGA-III is affected by the initial random structures and usually falls into a locally optimal solution, but it takes fewer attempts with lower costs. 20 parallel U-NSGA-III runs are conducted to design the pentablock polymers with high TC, and half of the candidates among 1921 generated polymers achieve the targets (TC > 0.4 W/(mK) and SA < 3.0). Ultimately, we check the TC of 50 promising polymers through molecular dynamics simulations and reveal the intrinsic connections between microstructures and TCs. Our developed AI-assisted inverse design approach for polymers is flexible and universal, and can be extended to the design of polymers with other target properties. △ Less

Submitted 18 February, 2024; originally announced February 2024.

Journal ref: Materials Today Physics 44, 101438, 2024

Tunable thermal conductivity of sustainable geopolymers by Si/Al ratio and moisture content: insights from atomistic simulations

Authors: Wenkai Liu, Shenghong Ju

Abstract: In this work, the effects of Si/Al ratio and moisture content on thermal transport in sustainable geopolymers has been comprehensively investigated by using the molecular dynamics simulation. The thermal conductivity of geopolymer systems increases with the increase of Si/Al ratio, and the phonon vibration frequency region which plays a major role in the main increase of its thermal conductivity i… ▽ More In this work, the effects of Si/Al ratio and moisture content on thermal transport in sustainable geopolymers has been comprehensively investigated by using the molecular dynamics simulation. The thermal conductivity of geopolymer systems increases with the increase of Si/Al ratio, and the phonon vibration frequency region which plays a major role in the main increase of its thermal conductivity is 8-25 THz, while the rest of the frequency interval contribute less. With the increase of moisture content, the thermal conductivity of geopolymer systems decreases at first, then increases and finally tends to be stable, which is contrary to the changing trend of porosity of the system. This is mainly because the existence of pores will lead to phonon scattering during thermal transport, which in turn affects the thermal conductivity of the system. When the moisture content is 5%, the thermal conductivity reaches a minimum value of about 1.103 W/(mK), which is 40.2% lower than the thermal conductivity of the system without water molecule. This work will help to enhance the physical level understanding of the relationship between the geopolymer structures and thermal transport properties. △ Less

Submitted 21 January, 2024; originally announced January 2024.

Journal ref: The Journal of Physical Chemistry B 128, 2972, 2024

Disorder-dependent Li diffusion in $\mathrm{Li_6PS_5Cl}$ investigated by machine learning potential

Authors: Jiho Lee, Suyeon Ju, Seungwoo Hwang, Jinmu You, Jisu Jung, Youngho Kang, Seungwu Han

Abstract: Solid-state electrolytes with argyrodite structures, such as $\mathrm{Li_6PS_5Cl}$, have attracted considerable attention due to their superior safety compared to liquid electrolytes and higher ionic conductivity than other solid electrolytes. Although experimental efforts have been made to enhance conductivity by controlling the degree of disorder, the underlying diffusion mechanism is not yet fu… ▽ More Solid-state electrolytes with argyrodite structures, such as $\mathrm{Li_6PS_5Cl}$, have attracted considerable attention due to their superior safety compared to liquid electrolytes and higher ionic conductivity than other solid electrolytes. Although experimental efforts have been made to enhance conductivity by controlling the degree of disorder, the underlying diffusion mechanism is not yet fully understood. Moreover, existing theoretical analyses based on ab initio MD simulations have limitations in addressing various types of disorder at room temperature. In this study, we directly investigate Li-ion diffusion in $\mathrm{Li_6PS_5Cl}$ at 300 K using large-scale, long-term MD simulations empowered by machine learning potentials (MLPs). To ensure the convergence of conductivity values within an error range of 10%, we employ a 25 ns simulation using a $5\times5\times5$ supercell containing 6500 atoms. The computed Li-ion conductivity, activation energies, and equilibrium site occupancies align well with experimental observations. Notably, Li-ion conductivity peaks when Cl ions occupy 25% of the 4c sites, rather than at 50% where the disorder is maximized. This phenomenon is explained by the interplay between inter-cage and intra-cage jumps. By elucidating the key factors affecting Li-ion diffusion in $\mathrm{Li_6PS_5Cl}$, this work paves the way for optimizing ionic conductivity in the argyrodite family. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Comments: 34 pages, 6 figures

Fermi Surface Nesting with Heavy Quasiparticles in the Locally Noncentrosymmetric Superconductor CeRh$_2$As$_2$

Authors: Yi Wu, Yongjun Zhang, Sailong Ju, Yong Hu, Yanen Huang, Yanan Zhang, Huali Zhang, Hao Zheng, Guowei Yang, Evrard-Ouicem Eljaouhari, Baopeng Song, Nicholas C. Plumb, Frank Steglich, Ming Shi, Gertrud Zwicknag, Chao Cao, Huiqiu Yuan, Yang Liu

Abstract: The locally noncentrosymmetric heavy fermion superconductor CeRh$_2$As$_2$ has attracted considerable interests due to its rich superconducting phases, accompanied by a quadrupole density wave and pronounced antiferromagnetic excitations. To understand the underlying physics, we here report measurements from high-resolution angle-resolved photoemission. Our results reveal fine splittings of the co… ▽ More The locally noncentrosymmetric heavy fermion superconductor CeRh$_2$As$_2$ has attracted considerable interests due to its rich superconducting phases, accompanied by a quadrupole density wave and pronounced antiferromagnetic excitations. To understand the underlying physics, we here report measurements from high-resolution angle-resolved photoemission. Our results reveal fine splittings of the conduction bands related to the locally noncentrosymmetric structure, as well as a quasi-two-dimensional Fermi surface (FS) with strong $4f$ contributions. The FS exhibits nesting with an in-plane vector $(πぱい/a, πぱい/a)$, which is facilitated by the van Hove singularity near $\bar X$ that arises from the characteristic conduction-$f$ hybridization. The FS nesting provides a natural explanation for the observed antiferromagnetic excitations at $(πぱい/a, πぱい/a)$, which could be intimately connected to its unconventional superconductivity. Our experimental results are well supported by density functional theory plus dynamical mean field theory calculations, which can capture the strong correlation effects. Our study not only provides spectroscopic proof of the key factors underlying the field-induced superconducting transition, but also uncovers the critical role of FS nesting and lattice Kondo effect in the intertwined spin and charge fluctuations. △ Less

Submitted 1 June, 2024; v1 submitted 13 September, 2023; originally announced September 2023.

Comments: v1 submitted on Sep 13th 2023

Clean BN encapsulated 2D FETs with lithography compatible contacts

Authors: Binxi Liang, Anjian Wang, Jian Zhou, Shihao Ju, Jian Chen, Kenji Watanabe, Takashi Taniguchi, Yi Shi, Songlin Li

Abstract: Device passivation through ultraclean hexagonal BN encapsulation is proven one of the most effective ways for constructing high-quality devices with atomically thin semiconductors that preserves the ultraclean interface quality and intrinsic charge transport behavior. However, it remains challenging to integrate lithography compatible contact electrodes with flexible distributions and patterns. He… ▽ More Device passivation through ultraclean hexagonal BN encapsulation is proven one of the most effective ways for constructing high-quality devices with atomically thin semiconductors that preserves the ultraclean interface quality and intrinsic charge transport behavior. However, it remains challenging to integrate lithography compatible contact electrodes with flexible distributions and patterns. Here, we report the feasibility in straightforwardly integrating lithography defined contacts into BN encapsulated 2D FETs, giving rise to overall device quality comparable to the state-of-the-art results from the painstaking pure dry transfer processing. Electronic characterization on FETs consisting of WSe$_2$ and MoS$_2$ channels reveals an extremely low scanning hysteresis of ca. 2 mV on average, a low density of interfacial charged impurity of ca. $10^{11}\,$cm$^{-2}$, and generally high charge mobilities over $1000\,$cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ at low temperatures. The overall high device qualities verify the viability in directly integrating lithography defined contacts into BN encapsulated devices to exploit their intrinsic charge transport properties for advanced electronics. △ Less

Submitted 24 June, 2023; originally announced June 2023.

Comments: 17 pages, 4 figures

Journal ref: ACS Applied Materials & Interfaces, 14, 18697 (2022)

Electrical contact properties between Yb and few-layer WS$_2$

Authors: Shihao Ju, Lipeng Qiu, Jian Zhou, Binxi Liang, Wenfeng Wang, Taotao Li, Jian Chen, Xinran Wang, Yi Shi, Songlin Li

Abstract: Charge injection mechanism from contact electrodes into two-dimensional (2D) dichalcogenides is an essential topic for exploiting electronics based on 2D channels, but remains not well understood. Here, low-work-function metal ytterbium (Yb) was employed as contacts for tungsten disulfide (WS$_2$) to understand the realistic injection mechanism. The contact properties in WS$_2$ with variable tempe… ▽ More Charge injection mechanism from contact electrodes into two-dimensional (2D) dichalcogenides is an essential topic for exploiting electronics based on 2D channels, but remains not well understood. Here, low-work-function metal ytterbium (Yb) was employed as contacts for tungsten disulfide (WS$_2$) to understand the realistic injection mechanism. The contact properties in WS$_2$ with variable temperature (T) and channel thickness (tch) were synergetically characterized. It is found that the Yb/WS$_2$ interfaces exhibit a strong pinning effect between energy levels and a low contact resistance ($R_\rm{C}$) value down to $5\,kΩおめが\cdotμみゅー$m. Cryogenic electrical measurements reveal that $R_\rm{C}$ exhibits weakly positive dependence on T till 77 K, as well as a weakly negative correlation with tch. In contrast to the non-negligible $R_\rm{C}$ values extracted, an unexpectedly low effective thermal injection barrier of 36 meV is estimated, indicating the presence of significant tunneling injection in subthreshold regime and the inapplicability of the pure thermionic emission model to estimate the height of injection barrier. △ Less

Submitted 24 June, 2023; originally announced June 2023.

Journal ref: Applied Physics Letters, 120, 253505 (2022)

Coulomb screening and scattering in atomically thin transistors across dimensional crossover

Authors: Shihao Ju, Binxi Liang, Jian Zhou, Danfeng Pan, Yi Shi, Songlin Li

Abstract: Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated systems, in response to the changes of three crucial Coulomb factors, including electric permittivity, interaction length, and density of Coulomb impurities. W… ▽ More Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated systems, in response to the changes of three crucial Coulomb factors, including electric permittivity, interaction length, and density of Coulomb impurities. We systematically collect and analyze the trends of electron mobility with respect to the above factors, realized by synergic modulations on channel thicknesses and gating modes in dual-gated MoS2 transistors with asymmetric dielectric cleanliness. Strict configurative form factors are developed to capture the subtle parametric changes across dimensional crossover. A full diagram of the carrier scattering mechanisms, in particular on the pronounced Coulomb scattering, is unfolded. Moreover, we clarify the presence of up to 40% discrepancy in mobility by considering the permittivity modification across dimensional crossover. The understanding is useful for exploiting atomically thin body transistors for advanced electronics. △ Less

Submitted 24 June, 2023; originally announced June 2023.

Comments: 26 pages, 5 figures

Journal ref: Nano Letters, 22, 6671 (2022)

Large modulation of thermal transport in 2D semimetal triphosphides by doping-induced electron-phonon coupling

Authors: Yongchao Rao, C. Y. Zhao, Lei Shen, Shenghong Ju

Abstract: Recent studies demonstrate that novel 2D triphosphides semiconductors possess high carrier mobility and promising thermoelectric performance, while the carrier transport behaviors in 2D semimetal triphosphides have never been elucidated before. Herein, using the first-principles calculations and Boltzmann transport theory, we reveal that the electron-phonon coupling can be significant and thus gre… ▽ More Recent studies demonstrate that novel 2D triphosphides semiconductors possess high carrier mobility and promising thermoelectric performance, while the carrier transport behaviors in 2D semimetal triphosphides have never been elucidated before. Herein, using the first-principles calculations and Boltzmann transport theory, we reveal that the electron-phonon coupling can be significant and thus greatly inhibits the electron and phonon transport in electron-doped BP3 and CP3. The intrinsic heat transport capacity of flexural acoustic phonon modes in the wrinkle structure is largely suppressed arising from the strong out-of-plane phonon scatterings, leading to the low phonon thermal conductivity of 1.36 and 5.33 W/(mK) for BP3 and CP3 at room temperature, and at high doping level, the enhanced scattering from electron diminishes the phonon thermal conductivity by 71% and 54% for BP3 and CP3, respectively. Instead, electron thermal conductivity shows nonmonotonic variations with the increase of doping concentration, stemming from the competition between electron-phonon scattering rates and electron group velocity. It is worth noting that the heavy-doping effect induced strong scattering from phonon largely suppresses the electron transport and reduces electron thermal conductivity to the magnitude of phonon thermal conductivity. This work sheds light on the electron and phonon transport properties in semimetal triphosphides monolayer and provides an efficient avenue for the modulation of carrier transport by doping-induced electron-phonon coupling effect. △ Less

Submitted 7 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. B 108, 085413, 2023

Microscopic mechanism of tunable thermal conductivity in carbon nanotube-geopolymer nanocomposites

Authors: Wenkai Liu, Ling Qin, C. Y. Zhao, Shenghong Ju

Abstract: Geopolymer has been considered as a green and low-carbon material with great potential application due to its simple synthesis process, environmental protection, excellent mechanical properties, good chemical resistance and durability. In this work, the molecular dynamics simulation is employed to investigate the effect of the size, content and distribution of carbon nanotubes on the thermal condu… ▽ More Geopolymer has been considered as a green and low-carbon material with great potential application due to its simple synthesis process, environmental protection, excellent mechanical properties, good chemical resistance and durability. In this work, the molecular dynamics simulation is employed to investigate the effect of the size, content and distribution of carbon nanotubes on the thermal conductivity of geopolymer nanocomposites, and the microscopic mechanism is analyzed by the phonon density of states, phonon participation ratio and spectral thermal conductivity, etc. The results show that there is a significant size effect in geopolymer nanocomposites system due to the carbon nanotubes. In addition, when the content of carbon nanotubes is 16.5%, the thermal conductivity in carbon nanotubes vertical axial direction (4.85 W/(mk)) increases 125.6% compared with the system without carbon nanotubes (2.15 W/(mk)). However, the thermal conductivity in carbon nanotubes vertical axial direction (1.25 W/(mk)) decreases 41.9%, which is mainly due to the interfacial thermal resistance and phonon scattering at the interfaces. The above results provide theoretical guidance for the tunable thermal conductivity in carbon nanotube-geopolymer nanocomposites. △ Less

Submitted 14 February, 2023; originally announced February 2023.

Journal ref: The Journal of Physical Chemistry B 127, 2267, 2023

Anisotropic Electron-Hole Excitation and Large Linear Dichroism in Two-Dimensional Ferromagnet CrSBr with In-Plane Magnetization

Authors: Tian-Xiang Qian, Ju Zhou, Tian-Yi Cai, Sheng Ju

Abstract: The observation of magnetic ordering in atomically thin CrI$_3$ and Cr$_2$Ge$_2$Te$_6$ monolayers has aroused intense interest in condensed matter physics and material science. Studies of van de Waals two-dimensional (2D) magnetic materials are of both fundamental importance and application interest. In particular, exciton-enhanced magneto-optical properties revealed in CrI$_3$ and CrBr$_3$ monola… ▽ More The observation of magnetic ordering in atomically thin CrI$_3$ and Cr$_2$Ge$_2$Te$_6$ monolayers has aroused intense interest in condensed matter physics and material science. Studies of van de Waals two-dimensional (2D) magnetic materials are of both fundamental importance and application interest. In particular, exciton-enhanced magneto-optical properties revealed in CrI$_3$ and CrBr$_3$ monolayers have expanded the understanding of exciton physics in 2D materials. Unlike CrI$_3$ and CrBr$_3$ with out-of-plane magnetization, CrSBr has an in-plane magnetic moment, therefore, providing a good opportunity to study the magnetic linear dichroism and high-order magneto-optical effects. Here, based on the many-body perturbation method within density-functional theory, we have studied quasiparticle electronic structure, exciton, and optical properties in CrSBr monolayer. Strongly bounded exciton has been identified with the first bright exciton located at 1.35 eV, in good agreement with an experiment of photoluminescence (Nat. Mater. \textbf{20}, 1657 (2021)). Strong contrast in the optical absorption is found between the electric fields lying along the in-plane two orthogonal directions. In accordance with a typical and realistic experimental setup, we show that the rotation angle of linear polarized light, either reflected or transmitted, could be comparable with those revealed in black phosphorene. Such large linear dichroism arises mainly from anisotropic in-plane crystal structure. The magnetic contribution from the off-diagonal component of dielectric function to the linear dichroism in CrSBr is negligible. Our findings not only have revealed excitonic effect on the optical and magneto-optical properties in 2D ferromagnet CrSBr, but also have shown its potential applications in 2D optics and optoelectronics. △ Less

Submitted 27 June, 2023; v1 submitted 30 January, 2023; originally announced January 2023.

Comments: 47 pages, 24 figures

Exploring high thermal conductivity polymers via interpretable machine learning with physical descriptors

Authors: Xiang Huang, Shengluo Ma, C. Y. Zhao, Hong Wang, Shenghong Ju

Abstract: The efficient and economical exploitation of polymers with high thermal conductivity is essential to solve the issue of heat dissipation in organic devices. Currently, the experimental preparation of functional thermal conductivity polymers remains a trial and error process due to the multi-degrees of freedom during the synthesis and characterization process. In this work, we have proposed a high-… ▽ More The efficient and economical exploitation of polymers with high thermal conductivity is essential to solve the issue of heat dissipation in organic devices. Currently, the experimental preparation of functional thermal conductivity polymers remains a trial and error process due to the multi-degrees of freedom during the synthesis and characterization process. In this work, we have proposed a high-throughput screening framework for polymer chains with high thermal conductivity via interpretable machine learning and physical-feature engineering. The polymer thermal conductivity datasets for training were first collected by molecular dynamics simulation. Inspired by the drug-like small molecule representation and molecular force field, 320 polymer monomer descriptors were calculated and the 20 optimized descriptors with physical meaning were extracted by hierarchical down-selection. All the machine learning models achieve a prediction accuracy R2 greater than 0.80, which is superior to that of represented by traditional graph descriptors. Further, the cross-sectional area and dihedral stiffness descriptors were identified for positive/negative contribution to thermal conductivity, and 107 promising polymer structures with thermal conductivity greater than 20.00 W/mK were obtained. Mathematical formulas for predicting the polymer thermal conductivity were also constructed by using symbolic regression. The high thermal conductivity polymer structures are mostly πぱい-conjugated, whose overlapping p-orbitals enable easily to maintain strong chain stiffness and large group velocities. The proposed data-driven framework should facilitate the theoretical and experimental design of polymers with desirable properties. △ Less

Submitted 8 January, 2023; originally announced January 2023.

Journal ref: npj Computational Materials 9, 191, 2023

Enhancing thermoelectric properties of isotope graphene nanoribbons via machine learning guided manipulation of disordered antidots and interfaces

Authors: Xiang Huang, Shengluo Ma, Haidong Wang, Shangchao Lin, C. Y. Zhao, Hong Wang, Shenghong Ju

Abstract: Structural manipulation at the nanoscale breaks the intrinsic correlations among different energy carrier transport properties, achieving high thermoelectric performance. However, the coupled multifunctional (phonon and electron) transport in the design of nanomaterials makes the optimization of thermoelectric properties challenging. Machine learning brings convenience to the design of nanostructu… ▽ More Structural manipulation at the nanoscale breaks the intrinsic correlations among different energy carrier transport properties, achieving high thermoelectric performance. However, the coupled multifunctional (phonon and electron) transport in the design of nanomaterials makes the optimization of thermoelectric properties challenging. Machine learning brings convenience to the design of nanostructures with large degree of freedom. Herein, we conducted comprehensive thermoelectric optimization of isotopic armchair graphene nanoribbons (AGNRs) with antidots and interfaces by combining Green's function approach with machine learning algorithms. The optimal AGNR with ZT of 0.894 by manipulating antidots was obtained at the interfaces of the aperiodic isotope superlattices, which is 5.69 times larger than that of the pristine structure. The proposed optimal structure via machine learning provides physical insights that the carbon-13 atoms tend to form a continuous interface barrier perpendicular to the carrier transport direction to suppress the propagation of phonons through isotope AGNRs. The antidot effect is more effective than isotope substitution in improving the thermoelectric properties of AGNRs. The proposed approach coupling energy carrier transport property analysis with machine learning algorithms offers highly efficient guidance on enhancing the thermoelectric properties of low-dimensional nanomaterials, as well as to explore and gain non-intuitive physical insights. △ Less

Submitted 12 July, 2022; originally announced July 2022.

Journal ref: International Journal of Heat and Mass Transfer 197, 123332, 2022

High thermoelectric performance in metastable phase of silicon: a first-principles study

Authors: Yongchao Rao, C. Y. Zhao, Shenghong Ju

Abstract: In this work, both thermal and electrical transport properties of diamond$-$cubic Si (Si$-$I) and metastable R8 phase of Si (Si$-$XII) are comparatively studied by using first$-$principles calculations combined with Boltzmann transport theory. The metastable Si$-$XII shows one magnitude lower lattice thermal conductivity than stable Si$-$I from 300 to 500~K, attributed from the stronger phonon sca… ▽ More In this work, both thermal and electrical transport properties of diamond$-$cubic Si (Si$-$I) and metastable R8 phase of Si (Si$-$XII) are comparatively studied by using first$-$principles calculations combined with Boltzmann transport theory. The metastable Si$-$XII shows one magnitude lower lattice thermal conductivity than stable Si$-$I from 300 to 500~K, attributed from the stronger phonon scattering in three$-$phonon scattering processes of Si$-$XII. For the electronic transport properties, although Si$-$XII with smaller band gap (0.22 eV) shows lower Seebeck coefficient, the electrical conductivities of anisotropic $n$$-$type Si$-$XII show considerable values along $x$ axis due to the small effective masses of electron along this direction. The peaks of thermoelectric figure of merit ($ZT$) in $n$$-$type Si$-$XII are higher than that of $p$$-$type ones along the same direction. Owing to the lower lattice thermal conductivity and optimistic electrical conductivity, Si$-$XII exhibits larger optimal $ZT$ compared with Si$-$I in both $p$$-$ and $n$$-$type doping. For $n$$-$type Si$-$XII, the optimal $ZT$ values at 300, 400, and 500 K can reach 0.24, 0.43, and 0.63 along $x$ axis at carrier concentration of $2.6\times10^{19}$, $4.1\times10^{19}$, and $4.8\times10^{19}$~cm$^{-3}$, respectively. The reported results elucidate that the metastable Si could be integrated to the thermoelectric power generator. △ Less

Submitted 30 March, 2022; originally announced March 2022.

Journal ref: Applied Physics Letter 120, 163901, 2022

Spin order and fluctuations in the EuAl$_4$ and EuGa$_4$ topological antiferromagnets: A $μみゅー$SR study

Authors: X. Y. Zhu, H. Zhang, D. J. Gawryluk, Z. X. Zhen, B. C. Yu, S. L. Ju, W. Xie, D. M. Jiang, W. J. Cheng, Y. Xu, M. Shi, E. Pomjakushina, Q. F. Zhan, T. Shiroka, T. Shang

Abstract: We report on systematic muon-spin rotation and relaxation ($μみゅー$SR) studies of the magnetic properties of EuAl$_4$ and EuGa$_4$ single crystals at a microscopic level. Transverse-field $μみゅー$SR measurements, spanning a wide temperature range (from 1.5 to 50 K), show clear bulk AFM transitions, with an almost 100% magnetic volume fraction in both cases. Zero-field $μみゅー$SR measurements, covering both the A… ▽ More We report on systematic muon-spin rotation and relaxation ($μみゅー$SR) studies of the magnetic properties of EuAl$_4$ and EuGa$_4$ single crystals at a microscopic level. Transverse-field $μみゅー$SR measurements, spanning a wide temperature range (from 1.5 to 50 K), show clear bulk AFM transitions, with an almost 100% magnetic volume fraction in both cases. Zero-field $μみゅー$SR measurements, covering both the AFM and the paramagnetic (PM) states, reveal internal magnetic fields $B_\mathrm{int}(0) = 0.33$ T and 0.89 T in EuAl$_4$ and EuGa$_4$, respectively. The transverse muon-spin relaxation rate $λらむだ_\mathrm{T}$, a measure of the internal field distribution at the muon-stopping site, shows a contrasting behavior. In EuGa$_4$, it decreases with lowering the temperature, reaching its minimum at zero temperature, $λらむだ_\mathrm{T}(0) = 0.71$ $μみゅー$s$^{-1}$. In EuAl$_4$, it increases significantly below $T_\mathrm{N}$, to reach 58 $μみゅー$s$^{-1}$ at 1.5 K, most likely reflecting the complex magnetic structure and the competing interactions in the AFM state of EuAl$_4$. In both compounds, the temperature-dependent longitudinal muon-spin relaxation $λらむだ_\mathrm{L}(T)$, an indication of the rate of spin fluctuations, diverges near the onset of AFM order, followed by a significant drop at $T < T_\mathrm{N}$. In the AFM state, spin fluctuations are much stronger in EuAl$_4$ than in EuGa$_4$, while being comparable in the PM state. The evidence of robust spin fluctuations against the external magnetic fields provided by $μみゅー$SR may offer new insights into the origin of the topological Hall effect and the possible magnetic skyrmions in the EuAl$_4$ and EuGa$_4$ compounds. △ Less

Submitted 6 January, 2022; originally announced January 2022.

Comments: 10 pages, 7 figures, accepted by Phys. Rev. B

Journal ref: Phys. Rev. B 105, 014423 (2022)

Josephson diode effect from Cooper pair momentum in a topological semimetal

Authors: Banabir Pal1, Anirban Chakraborty, Pranava K. Sivakumar, Margarita Davydova, Ajesh K. Gopi, Avanindra K. Pandeya, Jonas A. Krieger, Yang Zhang, Mihir Date, Sailong Ju, Noah Yuan, Niels B. M. Schröter, Liang Fu, Stuart S. P. Parkin

Abstract: In the presence of an external magnetic field Cooper pairs in noncentrosymmetric superconductors can acquire finite momentum. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a dissipationless supercurrent can flow along one direction but not the opposite. However, to date this has not been observed. Here we report the discovery of a giant… ▽ More In the presence of an external magnetic field Cooper pairs in noncentrosymmetric superconductors can acquire finite momentum. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a dissipationless supercurrent can flow along one direction but not the opposite. However, to date this has not been observed. Here we report the discovery of a giant Josephson diode effect (JDE) in Josephson junctions formed from a type II Dirac semimetal, NiTe2. A distinguishing feature is that the asymmetry in the critical current depends sensitively on the magnitude and direction of an applied magnetic field and achieves its maximum value of ~60% when the magnetic field is perpendicular to the current and is of the order of just 10 mT. Moreover the asymmetry changes sign several times with increasing field. These characteristic features are accounted for in a theoretical model based on finite-momentum Cooper pairing derived from spin-helical topological surface states, in an otherwise centrosymmetric system. The finite pairing momentum is further established, and its value determined, from the evolution of the interference pattern under an in-plane magnetic field. The observed giant magnitude of the asymmetry in critical current and the clear exposition of its underlying mechanism paves the way to building novel superconducting computing devices using the Josephson diode effect. △ Less

Submitted 21 December, 2021; originally announced December 2021.

Comments: 14 pages, 4 figures

Descriptors of intrinsic hydrodynamic thermal transport: screening a phonon database in a machine learning approach

Authors: Pol Torres, Stephen Wu, Shenghong Ju, Chang Liu, Terumasa Tadano, Ryo Yoshida, Junichiro Shiomi

Abstract: Machine learning techniques are used to explore the intrinsic origins of the hydrodynamic thermal transport and to find new materials interesting for science and engineering. The hydrodynamic thermal transport is governed intrinsically by the hydrodynamic scale and the thermal conductivity. The correlations between these intrinsic properties and harmonic and anharmonic properties, and a large numb… ▽ More Machine learning techniques are used to explore the intrinsic origins of the hydrodynamic thermal transport and to find new materials interesting for science and engineering. The hydrodynamic thermal transport is governed intrinsically by the hydrodynamic scale and the thermal conductivity. The correlations between these intrinsic properties and harmonic and anharmonic properties, and a large number of compositional (290) and structural (1224) descriptors of 131 crystal compound materials are obtained, revealing some of the key descriptors that determines the magnitude of the intrinsic hydrodynamic effects, most of them related with the phonon relaxation times. Then, a trained black-box model is applied to screen more than 5000 materials. The results identify materials with potential technological applications. Understanding the properties correlated to hydrodynamic thermal transport can help to find new thermoelectric materials and on the design of new materials to ease the heat dissipation in electronic devices. △ Less

Submitted 19 October, 2021; originally announced October 2021.

Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet

Authors: H. Zhang, X. Y. Zhu, Y. Xu, D. J. Gawryluk, W. Xie, S. L. Ju, M. Shi, T. Shiroka, Q. F. Zhan, E. Pomjakushina, T. Shang

Abstract: We report on systematic temperature- and magnetic field-dependent studies of the EuGa$_4$ binary compound, which crystallizes in a centrosymmetric tetragonal BaAl$_4$-type structure with space group $I4/mmm$. The electronic properties of EuGa$_4$ single crystals, with an antiferromagnetic (AFM) transition at $T_\mathrm{N} \sim 16.4$ K, were characterized via electrical resistivity and magnetizatio… ▽ More We report on systematic temperature- and magnetic field-dependent studies of the EuGa$_4$ binary compound, which crystallizes in a centrosymmetric tetragonal BaAl$_4$-type structure with space group $I4/mmm$. The electronic properties of EuGa$_4$ single crystals, with an antiferromagnetic (AFM) transition at $T_\mathrm{N} \sim 16.4$ K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching $\sim 7 \times 10^4$ % at 2 K in a magnetic field of 9 T. In the AFM state, EuGa$_4$ undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. Below $T_\mathrm{N}$, in the $\sim$4-7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl$_4$-type structure, to which EuGa$_4$ and EuAl$_4$ belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands. △ Less

Submitted 16 October, 2021; originally announced October 2021.

Comments: 15 pages, 6 figures; to be appeared on JPCM

Journal ref: J. Phys.: Condens. Matter 34, 034005 (2022)

Rich Nature of Van Hove Singularities in Kagome Superconductor CsV$_3$Sb$_5$

Authors: Yong Hu, Xianxin Wu, Brenden R. Ortiz, Sailong Ju, Xinlong Han, J. Z. Ma, N. C. Plumb, Milan Radovic, Ronny Thomale, S. D. Wilson, Andreas P. Schnyder, M. Shi

Abstract: The recently discovered layered kagome metals AV$_3$Sb$_5$ (A=K, Rb, Cs) exhibit diverse correlated phenomena, which are intertwined with a topological electronic structure with multiple van Hove singularities (VHSs) in the vicinity of the Fermi level. As the VHSs with their large density of states enhance correlation effects, it is of crucial importance to determine their nature and properties. H… ▽ More The recently discovered layered kagome metals AV$_3$Sb$_5$ (A=K, Rb, Cs) exhibit diverse correlated phenomena, which are intertwined with a topological electronic structure with multiple van Hove singularities (VHSs) in the vicinity of the Fermi level. As the VHSs with their large density of states enhance correlation effects, it is of crucial importance to determine their nature and properties. Here, we combine polarization-dependent angle-resolved photoemission spectroscopy with density functional theory to directly reveal the sublattice properties of 3d-orbital VHSs in CsV$_3$Sb$_5$. Four VHSs are identified around the M point and three of them are close to the Fermi level, with two having sublattice-pure and one sublattice-mixed nature. Remarkably, the VHS just below the Fermi level displays an extremely flat dispersion along MK, establishing the experimental discovery of higher-order VHS. The characteristic intensity modulation of Dirac cones around K further demonstrates the sublattice interference embedded in the electronic structure. The crucial insights into the electronic structure, revealed by our work, provide a solid starting point for the understanding of the intriguing correlation phenomena in the kagome metals AV$_3$Sb$_5$. △ Less

Submitted 10 June, 2021; originally announced June 2021.

Report number: Nat Commun 13, 2220 (2022)

Journal ref: Nat Commun 13, 2220 (2022)

Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe

Authors: Kang Lai, Sailong Ju, Hongen Zhu, Hanwen Wang, Hongjian Wu, Bingjie Yang, Enrui Zhang, Ming Yang, Fangsen Li, Shengtao Cui, Xiaohui Deng, Zheng Han, Mengjian Zhu, Jiayu Dai

Abstract: Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in m… ▽ More Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in monoclinic gallium telluride (GaTe). Our first-principles calculations reveal the in-plane anisotropic energy band structure of GaTe measured experimentally is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect. Furthermore, accompanied by the thickness of GaTe increasing from mono- to few-layers, the strong interlayer coupling of GaTe induces direct-indirect-direct band gap transitions and the in-plane anisotropy of hole effective mass is reversed. Our results shed light on the physical origins of in-plane anisotropy of electronic structure in GaTe, paving the way for the design and device applications of nanoelectronics and optoelectronics based on anisotropic layered semiconductors. △ Less

Submitted 22 April, 2022; v1 submitted 27 February, 2021; originally announced March 2021.

Comments: To be published in Communications Physics

Journal ref: Communications Physics (2022) 5:143

Training machine-learning potentials for crystal structure prediction using disordered structures

Authors: Changho Hong, Jeong Min Choi, Wonseok Jeong, Sungwoo Kang, Suyeon Ju, Kyeongpung Lee, Jisu Jung, Yong Youn, Seungwu Han

Abstract: Prediction of the stable crystal structure for multinary (ternary or higher) compounds with unexplored compositions demands fast and accurate evaluation of free energies in exploring the vast configurational space. The machine-learning potential such as the neural network potential (NNP) is poised to meet this requirement but a dearth of information on the crystal structure poses a challenge in ch… ▽ More Prediction of the stable crystal structure for multinary (ternary or higher) compounds with unexplored compositions demands fast and accurate evaluation of free energies in exploring the vast configurational space. The machine-learning potential such as the neural network potential (NNP) is poised to meet this requirement but a dearth of information on the crystal structure poses a challenge in choosing training sets. Herein we propose constructing the training set from densityfunctional-theory (DFT) based dynamical trajectories of liquid and quenched amorphous phases, which does not require any preceding information on material structures except for the chemical composition. To demonstrate suitability of the trained NNP in the crystal structure prediction, we compare NNP and DFT energies for Ba2AgSi3, Mg2SiO4, LiAlCl4, and InTe2O5F over experimental phases as well as low-energy crystal structures that are generated theoretically. For every material, we find strong correlations between DFT and NNP energies, ensuring that the NNPs can properly rank energies among low-energy crystalline structures. We also find that the evolutionary search using the NNPs can identify low-energy metastable phases more efficiently than the DFTbased approach. By proposing a way to developing reliable machine-learning potentials for the crystal structure prediction, this work will pave the way to identifying unexplored multinary phases efficiently. △ Less

Submitted 2 December, 2020; v1 submitted 18 August, 2020; originally announced August 2020.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 102, 224104 (2020)

Importance of interactions for the band structure of the topological Dirac semimetal Na3Bi

Authors: I. Di Bernardo, J. Collins, W. Wu, J. Zhou, S. A. Yang, S. Ju, M. T. Edmonds, M. S. Fuhrer

Abstract: We experimentally measure the band dispersions of topological Dirac semimetal Na3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na3Bi thin films. We find that the velocities for the lowest-lying conduction and valencebands are 1.6x10^6 m/s and 4.2x10^5 m/s respectively, significantly higher than pr… ▽ More We experimentally measure the band dispersions of topological Dirac semimetal Na3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na3Bi thin films. We find that the velocities for the lowest-lying conduction and valencebands are 1.6x10^6 m/s and 4.2x10^5 m/s respectively, significantly higher than previous theoreticalpredictions. We compare the experimental band dispersions to the theoretical band structures calculated usingan increasing hierarchy of approximations of self-energy corrections due to interactions: generalized gradientapproximation (GGA), meta-GGA, Heyd-Scuseria-Ernzerhof exchange-correlation functional (HSE06), and GW methods. We find that density functional theory methods generally underestimate the electron velocities. However, we find significantly improved agreement with an increasingly sophisticated description of the exchange and interaction potential, culminating in reasonable agreement with experiments obtained by the GW method. The results indicate that exchange-correlation effects are important in determining the electronicstructure of this Na3Bi, and are likely the origin of the high velocity. The electron velocity is consistent withrecent experiments on ultrathin Na3Bi and also may explain the ultrahigh carrier mobility observed in heavilyelectron-doped Na3Bi. △ Less

Submitted 14 July, 2020; originally announced July 2020.

Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4

Authors: Shenghong Ju, Yoshio Miura, Kaoru Yamamoto, Keisuke Masuda, Ken-ichi Uchida, Junichiro Shiomi

Abstract: Through Bayesian optimization and the least absolute shrinkage and selection operator (LASSO) technique combined with first-principles calculations, we investigated the tunnel magnetoresistance (TMR) effect of Fe/disordered-MgAl2O4(MAO)/Fe(001) magnetic tunnel junctions (MTJs) to determine structures of disordered-MAO that give large TMR ratios. The optimal structure with the largest TMR ratio was… ▽ More Through Bayesian optimization and the least absolute shrinkage and selection operator (LASSO) technique combined with first-principles calculations, we investigated the tunnel magnetoresistance (TMR) effect of Fe/disordered-MgAl2O4(MAO)/Fe(001) magnetic tunnel junctions (MTJs) to determine structures of disordered-MAO that give large TMR ratios. The optimal structure with the largest TMR ratio was obtained by Bayesian optimization with 1728 structural candidates, where the convergence was reached within 300 structure calculations. Characterization of the obtained structures suggested that the in-plane distance between two Al atoms plays an important role in determining the TMR ratio. Since the Al-Al distance of disordered MAO significantly affects the imaginary part of complex band structures, the majority-spin conductance of the Δでるた1 state in Fe/disordered-MAO/Fe MTJs increases with increasing in-plane Al-Al distance, leading to larger TMR ratios. Furthermore, we found that the TMR ratio tended to be large when the ratio of the number of Al, Mg, and vacancies in the [001] plane was 2:1:1, indicating that the control of Al atomic positions is essential to enhancing the TMR ratio in MTJs with disordered MAO. The present work reveals the effectiveness and advantage of material informatics combined with first-principles transport calculations in designing high-performance spintronic devices based on MTJs. △ Less

Submitted 15 January, 2020; v1 submitted 15 January, 2020; originally announced January 2020.

Comments: 26 pages, 8 figures and 1 table

Journal ref: Phys. Rev. Research 2, 023187 (2020)

Exploring diamond-like lattice thermal conductivity crystals via feature-based transfer learning

Authors: Shenghong Ju, Ryo Yoshida, Chang Liu, Kenta Hongo, Terumasa Tadano, Junichiro Shiomi

Abstract: Ultrahigh lattice thermal conductivity materials hold great importance since they play a critical role in the thermal management of electronic and optical devices. Models using machine learning can search for materials with outstanding higher-order properties like thermal conductivity. However, the lack of sufficient data to train a model is a serious hurdle. Herein we show that big data can compl… ▽ More Ultrahigh lattice thermal conductivity materials hold great importance since they play a critical role in the thermal management of electronic and optical devices. Models using machine learning can search for materials with outstanding higher-order properties like thermal conductivity. However, the lack of sufficient data to train a model is a serious hurdle. Herein we show that big data can complement small data for accurate predictions when lower-order feature properties available in big data are selected properly and applied to transfer learning. The connection between the crystal information and thermal conductivity is directly built with a neural network by transferring descriptors acquired through a pre-trained model for the feature property. Successful transfer learning shows the ability of extrapolative prediction and reveals descriptors for lattice anharmonicity. Transfer learning is employed to screen over 60000 compounds to identify novel crystals that can serve as alternatives to diamond. △ Less

Submitted 24 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. Materials 5, 053801 (2021)

Expanding the horizon of automated metamaterials discovery via quantum annealing

Authors: Koki Kitai, Jiang Guo, Shenghong Ju, Shu Tanaka, Koji Tsuda, Junichiro Shiomi, Ryo Tamura

Abstract: Complexity of materials designed by machine learning is currently limited by the inefficiency of classical computers. We show how quantum annealing can be incorporated into automated materials discovery and conduct a proof-of-principle study on designing complex thermofunctional metamaterials consisting of SiO2, SiC, and Poly(methyl methacrylate). Empirical computing time of our quantum-classical… ▽ More Complexity of materials designed by machine learning is currently limited by the inefficiency of classical computers. We show how quantum annealing can be incorporated into automated materials discovery and conduct a proof-of-principle study on designing complex thermofunctional metamaterials consisting of SiO2, SiC, and Poly(methyl methacrylate). Empirical computing time of our quantum-classical hybrid algorithm involving a factorization machine, a rigorous coupled wave analysis, and a D-Wave 2000Q quantum annealer was insensitive to the problem size, while a classical counterpart experienced rapid increase. Our method was used to design complex structures of wavelength selective radiators showing much better concordance with the thermal atmospheric transparency window in comparison to existing human-designed alternatives. Our result shows that quantum annealing provides scientists gigantic computational power that may change how materials are designed. △ Less

Submitted 18 February, 2019; originally announced February 2019.

Comments: 26pages, 5 figures

Journal ref: Phys. Rev. Research 2, 013319 (2020)

Materials Informatics for Heat Transfer: Recent Progresses and Perspectives

Authors: Shenghong Ju, Junichiro Shiomi

Abstract: With the advances in materials and integration of electronics and thermoelectrics, the demand for novel crystalline materials with ultimate high/low thermal conductivity is increasing. However, search for optimal thermal materials is challenge due to the tremendous degrees of freedom in the composition and structure of crystal compounds and nanostructures, and thus empirical search would be exhaus… ▽ More With the advances in materials and integration of electronics and thermoelectrics, the demand for novel crystalline materials with ultimate high/low thermal conductivity is increasing. However, search for optimal thermal materials is challenge due to the tremendous degrees of freedom in the composition and structure of crystal compounds and nanostructures, and thus empirical search would be exhausting. Materials informatics, which combines the simulation/experiment with machine learning, is now gaining great attention as a tool to accelerate the search of novel thermal materials. In this review, we discuss recent progress in developing materials informatics for heat transport: the exploration of crystals with high/low thermal conductivity via high-throughput screening, and nanostructure design for high/low thermal conductance using the Bayesian optimization and Monte Carlo tree search. The progresses show that the materials informatics method are useful for designing thermal functional materials. We end by addressing the remaining issues and challenges for further development. △ Less

Submitted 24 January, 2019; originally announced January 2019.

Journal ref: Nanoscale and Microscale Thermophysical Engineering 23, 157, 2019

Thermal interface conductance between aluminum and aluminum oxide: A rigorous test of atomistic level theories

Authors: Murali Gopal Muraleedharan, Kiarash Gordiz, Shenghong Ju, Junichiro Shiomi, Vigor Yang, Asegun Henry

Abstract: We report the first ever accurate theoretical prediction of thermal conductance of any material interface. Thermal interfacial conductance of aluminum (Al)-sapphire (αあるふぁ-Al2O3) interface along crystal directions (111) Al || (0001) Al2O3 for temperature ranging from 50-500 K is calculated using two fundamentally different methods: interfacial conductance modal analysis (ICMA) and atomistic green func… ▽ More We report the first ever accurate theoretical prediction of thermal conductance of any material interface. Thermal interfacial conductance of aluminum (Al)-sapphire (αあるふぁ-Al2O3) interface along crystal directions (111) Al || (0001) Al2O3 for temperature ranging from 50-500 K is calculated using two fundamentally different methods: interfacial conductance modal analysis (ICMA) and atomistic green function (AGF). While AGF overpredicts interfacial conductance, both the quantitative and qualitative predictions of ICMA are exceptional when compared with the time-domain thermoreflectance (TDTR) experimental data. The mean error in ICMA results are below 5%. We believe that the accurate theoretical prediction by ICMA can be credited to a more fundamental treatment of the interfacial heat flux in contrast to that of the phonon gas model (PGM) and inclusion of anharmonicity to full order. ICMA also gives the eigen mode level details revealing the nanoscale picture of heat transport: more than 90% of conductance is contributed by the cross correlation (interaction) between partially extended modes of Al and Al2O3 and the remaining is attributed to interfacial modes. This is a major milestone in combustion heat transfer research enabling materials scientists to rationally design propellant architectures to serve long-distance propulsion missions. △ Less

Submitted 17 July, 2018; originally announced July 2018.

Phonon-interference resonance effects in nanoparticles embedded in a matrix

Authors: Lei Feng, Takuma Shiga, Haoxue Han, Shenghong Ju, Yuriy A. Kosevich, Junichiro Shiomi

Abstract: We report an unambiguous phonon resonance effect originating from germanium nanoparticles embedded in silicon matrix. Our approach features the combination of phonon wave-packet method with atomistic dynamics and finite element method rooted in continuum theory. We find that multimodal phonon resonance, caused by destructive interference of coherent lattice waves propagating through and around the… ▽ More We report an unambiguous phonon resonance effect originating from germanium nanoparticles embedded in silicon matrix. Our approach features the combination of phonon wave-packet method with atomistic dynamics and finite element method rooted in continuum theory. We find that multimodal phonon resonance, caused by destructive interference of coherent lattice waves propagating through and around the nanoparticle, gives rise to sharp and significant transmittance dips, blocking the lower-end frequency range of phonon transport that is hardly diminished by other nanostructures. The resonance is sensitive to the phonon coherent length, where the finiteness of the wave packet width weakens the transmittance dip even when coherent length is longer than the particle diameter. Further strengthening of transmittance dips are possible by arraying multiple nanoparticles that gives rise to the collective vibrational mode. Finally, it is demonstrated that these resonance effects can significantly reduce thermal conductance in the lower-end frequency range. △ Less

Submitted 2 December, 2017; originally announced December 2017.

Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport

Authors: John T. Gaskins, George Kotsonis, Ashutosh Giri, Christopher T. Shelton, Edward Sachet, Zhe Cheng, Brian M. Foley, Zeyu Liu, Shenghong Ju, Junichiro, Mark S. Goorsky, Samuel Graham, Tengfei Luo, Asegun Henry, Jon-Paul Maria, Patrick E. Hopkins

Abstract: We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous ex… ▽ More We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous experimental data, suggest that the TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the "vibrational mismatch" concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as $490\lbrack +150, -110\rbrack$ MW m$^{-2}$ K$^{-1}$. The disagreement among the DMM and AGF and the experimental data these elevated temperatures suggests a non-negligible contribution from additional modes contributing to TBC that not accounted for in the fundamental assumptions of these harmonic formalisms, such as inelastic scattering. Given the high quality of these ZnO/GaN interface, these results provide an invaluable critical and quantitive assessment of the accuracy of assumptions in the current state of the art of computational approaches for predicting the phonon TBC across interfaces. △ Less

Submitted 25 October, 2017; originally announced October 2017.

Comments: 7 pages, 3 figures

Manipulating Multiple Order Parameters via Oxygen Vacancies: The case of Eu0.5Ba0.5TiO3-δでるた

Authors: Weiwei Li, Qian He, Le Wang, Huizhong Zeng, John Bowlan, Langsheng Ling, Dmitry A. Yarotski, Wenrui Zhang, Run Zhao, Jiahong Dai, Junxing Gu, Shipeng Shen, Haizhong Guo, Li Pi, Haiyan Wang, Yongqiang Wang, Ivan A. Velasco-Davalos, Yangjiang Wu, Zhijun Hu, Bin Chen, Run-Wei Li, Young Sun, Kuijuan Jin, Yuheng Zhang, Hou-Tong Chen , et al. (5 additional authors not shown)

Abstract: Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combin… ▽ More Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combined experimental and density-functional theory studies of Eu0.5Ba0.5TiO3-δでるた, we demonstrate that oxygen vacancies create Ti3+ 3d1 defect states, mediating the ferromagnetic coupling between the localized Eu 4f7 spins, and increase an off-center displacement of Ti ions, enhancing the ferroelectric Curie temperature. The dual function of Ti sites also promises a magnetoelectric coupling in the Eu0.5Ba0.5TiO3-δでるた. △ Less

Submitted 28 August, 2017; originally announced August 2017.

Comments: Accepted by Physical Review B, 2017

Designing nanostructures for interfacial phonon transport via Bayesian optimization

Authors: Shenghong Ju, Takuma Shiga, Lei Feng, Zhufeng Hou, Koji Tsuda, Junichiro Shiomi

Abstract: We demonstrate optimization of thermal conductance across nanostructures by developing a method combining atomistic Green's function and Bayesian optimization. With an aim to minimize and maximize the interfacial thermal conductance (ITC) across Si-Si and Si-Ge interfaces by means of Si/Ge composite interfacial structure, the method identifies the optimal structures from calculations of only a few… ▽ More We demonstrate optimization of thermal conductance across nanostructures by developing a method combining atomistic Green's function and Bayesian optimization. With an aim to minimize and maximize the interfacial thermal conductance (ITC) across Si-Si and Si-Ge interfaces by means of Si/Ge composite interfacial structure, the method identifies the optimal structures from calculations of only a few percent of the entire candidates (over 60,000 structures). The obtained optimal interfacial structures are non-intuitive and impacting: the minimum-ITC structure is an aperiodic superlattice that realizes 50% reduction from the best periodic superlattice. The physical mechanism of the minimum ITC can be understood in terms of crossover of the two effects on phonon transport: as the layer thickness in superlattice increases, the impact of Fabry-Pérot interference increases, and the rate of reflection at the layer-interfaces decreases. Aperiodic superlattice with spatial variation in the layer thickness has a degree of freedom to realize optimal balance between the above two competing mechanism. Furthermore, aperiodicity breaks the constructive phonon interference between the interfaces inhibiting the coherent phonon transport. The present work shows the effectiveness and advantage of material informatics in designing nanostructures to control heat conduction, which can be extended to other interfacial structures. △ Less

Submitted 16 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. X 7, 021024 (2017)

Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions

Authors: Ping Sun, Yin-Zhong Wu, Su-Hua Zhu, Tian-Yi Cai, Sheng Ju

Abstract: Current-voltage characteristics and $P-E$ loops are simulated in SrRuO$_{3}$/BaTiO$_{3}$/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier polarization self-consistently within the Thomas-Fermi model and the Landau-Devonshire theory. The shift of P-E loop from the center position and the unequal values of… ▽ More Current-voltage characteristics and $P-E$ loops are simulated in SrRuO$_{3}$/BaTiO$_{3}$/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier polarization self-consistently within the Thomas-Fermi model and the Landau-Devonshire theory. The shift of P-E loop from the center position and the unequal values of the positive coercive field and the negative coercive field are found, which are induced by the asymmetricity of interface dipoles. A complete J-V curve of the junction is shown for different barrier thickness, and the effect of the magnitude of interfacial polarization on the tunneling current is also investigated. △ Less

Submitted 28 September, 2014; originally announced September 2014.

Journal ref: J. Appl. Phys. 113, 174101 (2013)

Interface control of ferroelectricity in LaNiO3-BaTiO3 superlattices

Authors: Yin-Zhong Wu, Hai-Shuang Lu, Tian-Yi Cai, Sheng Ju

Abstract: LaNiO$_{3}$-BaTiO$_{3}$ superlattices with different types of interfaces are studied from first-principles density-functional theory. It is revealed that the ferroelectricity in the superlattice with (NiO$_2$)$^-$/(BaO)$^0$ interfaces is enhanced from that of the superlattice with (LaO)$^+$/(TiO$_2$)$^0$ interfaces. The origin lies at the polar discontinuity at the interface, which makes the holes… ▽ More LaNiO$_{3}$-BaTiO$_{3}$ superlattices with different types of interfaces are studied from first-principles density-functional theory. It is revealed that the ferroelectricity in the superlattice with (NiO$_2$)$^-$/(BaO)$^0$ interfaces is enhanced from that of the superlattice with (LaO)$^+$/(TiO$_2$)$^0$ interfaces. The origin lies at the polar discontinuity at the interface, which makes the holes localized within the (NiO$_2$)$^-$/(BaO)$^0$ interface, but drives a penetration of electrons into BaTiO$_3$ component near (LaO)$^+$/(TiO$_2$)$^0$ interface. Our calculations demonstrate an effective avenue to the robust ferroelectricity in BaTiO$_3$ ultrathin films. △ Less

Submitted 28 September, 2014; originally announced September 2014.

Comments: 14 pages, 6 figures

Journal ref: AIP Advances 4, 087109 (2014)

Electronic structure in one-Fe Brillouin zone of iron-pnictide superconductor CsFe$_2$As$_2$

Authors: S. Kong, D. Y. Liu, S. T. Cui, S. L. Ju, A. F. Wang, X. G. Luo, L. J. Zou, X. H. Chen, G. B. Zhang, Z. Sun

Abstract: The multiband nature of iron-pnictide superconductors is one of the keys to the understanding of their intriguing behavior. The electronic and magnetic properties heavily rely on the multiband interactions between different electron and hole pockets near the Fermi level. At the fundamental level, though many theoretical models were constructed on the basis of the so-called 1-Fe Brillouin zone (BZ)… ▽ More The multiband nature of iron-pnictide superconductors is one of the keys to the understanding of their intriguing behavior. The electronic and magnetic properties heavily rely on the multiband interactions between different electron and hole pockets near the Fermi level. At the fundamental level, though many theoretical models were constructed on the basis of the so-called 1-Fe Brillouin zone (BZ) with an emphasis of the basic square lattice of iron atoms, most electronic structure measurements were interpreted in the 2-Fe BZ. Whether the 1-Fe BZ is valid in a real system is still an open question. Using angle-resolved photoemission spectroscopy (ARPES), here we show in an extremely hole-doped iron-pnictide superconductor CsFe$_2$As$_2$ that the distribution of electronic spectral weight follows the 1-Fe BZ, and that the emerging band structure bears some features qualitatively different from theoretical band structures of the 1-Fe BZ. Our analysis suggests that the interlayer separation is an important tuning factor for the physics of FeAs layers, the increase of which can reduce the coupling between Fe and As and lead to the emergence of the electronic structure in accord with the 1-Fe symmetry of the Fe square lattice. Our finding puts strong constraints on the theoretical models constructed on the basis of the 1-Fe BZ. △ Less

Submitted 9 September, 2014; v1 submitted 8 September, 2014; originally announced September 2014.

Journal ref: Phys. Rev. B 92, 184512 (2015)

Oxygen-Vacancy-Induced Antiferromagnetism to Ferromagnetism Transformation in Multiferroic Thin Films

Authors: Weiwei Li, Run Zhao, Le Wang, Rujun Tang, Yuanyuan Zhu, Joo Hwan Lee, Haixia Cao, Tianyi Cai, Haizhong Guo, Can Wang, Langsheng Ling, Li Pi, Kuijuan Jin, Yuheng Zhang, Haiyan Wang, Yongqiang Wang, Sheng Ju, Hao Yang

Abstract: Oxygen vacancies (VOs) effects on magnetic ordering in Eu0.5Ba0.5TiO3-δでるた (EBTO3-δでるた) thin films have been investigated using a combination of experimental measurements and first-principles density-functional calculations. Two kinds of EBTO3-δでるたthin films with different oxygen deficiency have been fabricated. A nuclear resonance backscattering spectrometry technique has been used to quantitatively measu… ▽ More Oxygen vacancies (VOs) effects on magnetic ordering in Eu0.5Ba0.5TiO3-δでるた (EBTO3-δでるた) thin films have been investigated using a combination of experimental measurements and first-principles density-functional calculations. Two kinds of EBTO3-δでるたthin films with different oxygen deficiency have been fabricated. A nuclear resonance backscattering spectrometry technique has been used to quantitatively measure contents of the VOs. Eu0.5Ba0.5TiO3 ceramics have been known to exhibit ferroelectric (FE) and G-type antiferromagnetic (AFM) properties. While, a ferromagnetic (FM) behavior with a Curie temperature of 1.85 K has been found in the EBTO3-δでるた thin films. Spin-polarized Ti3+ ions, which originated from the VOs, has been proven to mediate a FM coupling between the local Eu 4f spins and were believed to be responsible for the great change of the magnetic ordering. Our work opens up a new avenue for developing FM-FE materials by manipulating the oxygen deficiency in AFM-FE multiferroics. △ Less

Submitted 13 April, 2013; v1 submitted 1 April, 2013; originally announced April 2013.

Comments: 27pages,6 figures,2 tables,conference

Evolution of band structure from optimally doped to heavily overdoped Co-substituted NaFeAs

Authors: S. T. Cui, S. Y. Zhu, A. F. Wang, S. Kong, S. L. Ju, X. G. Luo, X. H. Chen, G. B. Zhang, Z. Sun

Abstract: Using angle-resolved photoemission spectroscopy, we studied the electronic structure of NaFe$_{1-x}$Co$_x$As from an optimally doped superconducting compound ($x=0.028$) to a heavily overdoped non-superconducting one ($x=0.109$). Similar to the case of "122" type iron pnictides, our data suggest that Co dopant in NaFe$_{1-x}$Co$_x$As supplies extra charge carriers and shifts the Fermi level accord… ▽ More Using angle-resolved photoemission spectroscopy, we studied the electronic structure of NaFe$_{1-x}$Co$_x$As from an optimally doped superconducting compound ($x=0.028$) to a heavily overdoped non-superconducting one ($x=0.109$). Similar to the case of "122" type iron pnictides, our data suggest that Co dopant in NaFe$_{1-x}$Co$_x$As supplies extra charge carriers and shifts the Fermi level accordingly. In the $x=0.109$ compound, the hole-like bands around the zone center $Γがんま$ move to deeper binding energies and an electron pocket appears instead. The overall band renormalization remains basically the same throughout the doping range we studied, suggesting that the local magnetic/electronic correlations are not affected by carrier doping. We speculate that a balance between itinerant properties of mobile carriers and local interactions may play an important role for the superconductivity. △ Less

Submitted 20 June, 2012; originally announced June 2012.

Comments: 5 pages, 3 figures

Control of Length and Spatial Functionality of Single-Wall Carbon Nanotube AFM Nanoprobes

Authors: Haoyan Wei, Sang Nyon Kim, Minhua Zhao, Sang-Yong Ju, Bryan D. Huey, Harris L. Marcus, Fotios Papadimitrakopoulos

Abstract: Single-wall carbon nanotube (SWNT) nanofibrils were assembled onto conductive atomic force microscopy (AFM) probes with the help of dielectrophoresis (DEP). This process involved the application of a 10 V, 2 MHz, AC bias between a metal-coated AFM probe and a dilute suspension of SWNTs. This exerted a positive dielectrophoretic force onto the nanotubes that caused them to align while precipitating… ▽ More Single-wall carbon nanotube (SWNT) nanofibrils were assembled onto conductive atomic force microscopy (AFM) probes with the help of dielectrophoresis (DEP). This process involved the application of a 10 V, 2 MHz, AC bias between a metal-coated AFM probe and a dilute suspension of SWNTs. This exerted a positive dielectrophoretic force onto the nanotubes that caused them to align while precipitating out onto the probe. The gradual removal of the AFM probe away from the SWNT suspension consolidated these nanotubes into nanofibrils with a high degree of alignment as demonstrated with polarization Raman experiments. By varying the pulling speed, immersion time, and concentration of the SWNT suspension, one can tailor the diameter and thus the stiffness of these probes. Precise length trimming of these nanofibrils was also performed by their gradual immersion and dissolution into a liquid that strongly interacted with nanotubes, (i.e., sodium dodecyl sulfate (SDS) solution). Vacuum annealing these nanoprobes at temperature up to 450 degree C further increased their stiffness and rendered them insoluble to SDS and all other aqueous media. Regrowth of a new SWNT nanofibril from the side or at the end of a previously grown SWNT nanofibril was also demonstrated by a repeated dielectrophoretic assembly at the desired immersion depth. These SWNT nanofibril-equipped AFM probes are electrically conductive and mechanically robust for use as high-aspect-ratio electrochemical nanoprobes. △ Less

Submitted 25 June, 2011; originally announced June 2011.

Journal ref: Chemistry of Materials 2008, 20 (8), 2793-2801

Calorimetric Evidence for Nodes in the Overdoped Ba(Fe$_{0.9}$Co$_{0.1}$)$_{2}$As$_{2}$

Authors: Dong-Jin Jang, A. B. Vorontsov, I. Vekhter, K. Gofryk, Z. Yang, S. Ju, J. B. Hong, J. H. Han, Y. S. Kwon, F. Ronning, J. D. Thompson, Tuson Park

Abstract: We present low-temperature specific heat of the electron-doped Ba(Fe$_{0.9}$Co$_{0.1}$)$_{2}$As$_{2}$, which does not show any indication of an upturn down to 400 mK, the lowest measuring temperature. The lack of a Schottky-like feature at low temperatures or in magnetic fields up to 9 Tesla enables us to identify enhanced low-temperature quasiparticle excitations and to study anisotropy in the li… ▽ More We present low-temperature specific heat of the electron-doped Ba(Fe$_{0.9}$Co$_{0.1}$)$_{2}$As$_{2}$, which does not show any indication of an upturn down to 400 mK, the lowest measuring temperature. The lack of a Schottky-like feature at low temperatures or in magnetic fields up to 9 Tesla enables us to identify enhanced low-temperature quasiparticle excitations and to study anisotropy in the linear term of the specific heat. Our results can not be explained by a single or multiple isotropic superconducting gap, but are consistent with multi-gap superconductivity with nodes on at least one Fermi surface sheet. △ Less

Submitted 22 November, 2010; originally announced November 2010.

Comments: 5 pages 4 figures

Journal ref: New Journal of Physics 13, 023036 (2011)

Oxidation resistance of graphene-coated Cu and Cu/Ni alloy

Authors: Shanshan Chen, Lola Brown, Mark Levendorf, Weiwei Cai, Sang-Yong Ju, Jonathan Edgeworth, Xuesong Li, Carl Magnuson, Aruna Velamakanni, Richard R. Piner, Jiwoong Park, Rodney S. Ruoff

Abstract: The ability to protect refined metals from reactive environments is vital to many industrial and academic applications. Current solutions, however, typically introduce several negative effects, including increased thickness and changes in the metal physical properties. In this paper, we demonstrate for the first time the ability of graphene films grown by chemical vapor deposition to protect the s… ▽ More The ability to protect refined metals from reactive environments is vital to many industrial and academic applications. Current solutions, however, typically introduce several negative effects, including increased thickness and changes in the metal physical properties. In this paper, we demonstrate for the first time the ability of graphene films grown by chemical vapor deposition to protect the surface of the metallic growth substrates of Cu and Cu/Ni alloy from air oxidation. SEM, Raman spectroscopy, and XPS studies show that the metal surface is well protected from oxidation even after heating at 200 \degree C in air for up to 4 hours. Our work further shows that graphene provides effective resistance against hydrogen peroxide. This protection method offers significant advantages and can be used on any metal that catalyzes graphene growth. △ Less

Submitted 16 November, 2010; originally announced November 2010.

Magnetoelectric Coupling and Electric Control of Magnetization in Ferromagnet-Ferroelectric-Metal Superlattices

Authors: Tianyi Cai, Sheng Ju, Jaekwang Lee, Na Sai, Alexander A. Demkov, Qian Niu, Zhenya Li, Junren Shi, Enge Wang

Abstract: Ferromagnet-ferroelectric-metal superlattices are proposed to realize the large room-temperature magnetoelectric effect. Spin dependent electron screening is the fundamental mechanism at the microscopic level. We also predict an electric control of magnetization in this structure. The naturally broken inversion symmetry in our tri-component structure introduces a magnetoelectric coupling energy… ▽ More Ferromagnet-ferroelectric-metal superlattices are proposed to realize the large room-temperature magnetoelectric effect. Spin dependent electron screening is the fundamental mechanism at the microscopic level. We also predict an electric control of magnetization in this structure. The naturally broken inversion symmetry in our tri-component structure introduces a magnetoelectric coupling energy of $P M^2$. Such a magnetoelectric coupling effect is general in ferromagnet-ferroelectric heterostructures, independent of particular chemical or physical bonding, and will play an important role in the field of multiferroics. △ Less

Submitted 6 October, 2009; originally announced October 2009.

Comments: 5 pages including 3 figures and 1 table

Journal ref: Phys. Rev. B 80, 140415(R) (2009)