Showing 1–41 of 41 results for author: Junior, P E F

Electrical manipulation of inter-valley trions in twisted MoSe$_2$ homobilayers at room temperature

Authors: Bárbara L. T. Rosa, Paulo E. Faria Junior, Alisson R. Cadore, Yuhui Yang, Aris Koulas-Simos, Chirag C. Palekar, Sefaattin Tongay, Jaroslav Fabian, Stephan Reitzenstein

Abstract: The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitons in twisted MoSe$_2$ homobilayer devices at room temperature. Gate-dependent micro-photo… ▽ More The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitons in twisted MoSe$_2$ homobilayer devices at room temperature. Gate-dependent micro-photoluminescence spectroscopy reveals an energy tunability of several meVs originating from the emission of excitonic complexes. Furthermore, it investigates the twist-angle dependence of valley properties by fabricating devices with distinct stacking angles. Strengthened by density functional theory calculations, the results suggest that, depending on the rotation angle, the conduction band minima and hybridized states at the Q-point promote the formation of inter-valley trions involving the Q-and K-points in the conduction band and the K-point in the valence band. Besides exploring the charge-carrier manipulation in twisted homobilayers, our findings open new avenues for engineering multifunctional optoelectronic devices based on ultrathin semiconducting systems. △ Less

Submitted 10 July, 2024; originally announced July 2024.

Dual topological insulator with mirror-symmetry-protected helical edge states

Authors: Warlley H. Campos, Poliana H. Penteado, Julian Zanon, Paulo E. Faria Junior, Denis R. Candido, J. Carlos Egues

Abstract: Dual topological insulators (DTIs) are simultaneously protected by time-reversal and crystal symmetries, representing advantageous alternatives to conventional topological insulators. By combining ab initio calculations and the $\mathbf{k}\cdot\mathbf{p}$ approach, here we investigate the electronic band structure of a Na$_2$CdSn tri-atomic layer and derive a low-energy $4\times 4$ effective model… ▽ More Dual topological insulators (DTIs) are simultaneously protected by time-reversal and crystal symmetries, representing advantageous alternatives to conventional topological insulators. By combining ab initio calculations and the $\mathbf{k}\cdot\mathbf{p}$ approach, here we investigate the electronic band structure of a Na$_2$CdSn tri-atomic layer and derive a low-energy $4\times 4$ effective model consistent with all the symmetries of this material class. We obtain the effective Hamiltonian using the Löwdin perturbation theory, the folding down technique, and the theory of invariants, and determine its parameters by fitting our analytical dispersion relations to those of ab initio calculations. We then calculate the bulk topological invariants of the system and show that the Na$_2$CdSn tri-atomic layer is a giant-gap (hundreds of meV) quasi-2D DTI characterized by both spin and mirror Chern numbers $-2$. In agreement with the bulk-boundary correspondence theorem, we find that a finite-width strip of Na$_2$CdSn possesses two pairs of counter-propagating helical edge states per interface. We obtain analytical expressions for the edge states energy dispersions and wave functions, which are shown to agree with our numerical calculations. Our work opens a new avenue for further studies of Na$_2$CdSn as a potential DTI candidate with room-temperature applications in areas of technological interest, such as nanoelectronics and spintronics. △ Less

Submitted 24 May, 2024; originally announced May 2024.

Emergence of radial Rashba spin-orbit fields in twisted van der Waals heterostructures

Authors: Tobias Frank, Paulo E. Faria Junior, Klaus Zollner, Jaroslav Fabian

Abstract: Rashba spin-orbit coupling is a quintessential spin interaction appearing in virtually any electronic heterostructure. Its paradigmatic spin texture in the momentum space forms a tangential vector field. Using first-principles investigations, we demonstrate that in twisted homobilayers and hetero-multilayers, the Rashba coupling can be predominantly radial, parallel to the momentum. Specifically,… ▽ More Rashba spin-orbit coupling is a quintessential spin interaction appearing in virtually any electronic heterostructure. Its paradigmatic spin texture in the momentum space forms a tangential vector field. Using first-principles investigations, we demonstrate that in twisted homobilayers and hetero-multilayers, the Rashba coupling can be predominantly radial, parallel to the momentum. Specifically, we study four experimentally relevant structures: twisted bilayer graphene (Gr), twisted bilayer WSe$_2$, and twisted multilayers WSe$_2$/Gr/WSe$_2$ and WSe$_2$/Gr/Gr/WSe$_2$. We show, that the Rashba spin-orbit field texture in such structures can be controlled by an electric field, allowing to tune it from radial to tangential. Such spin-orbit engineering should be useful for designing novel spin-charge conversion and spin-orbit torque schemes, as well as for controlling correlated phases and superconductivity in van der Waals materials. △ Less

Submitted 19 February, 2024; originally announced February 2024.

Amplification of interlayer exciton emission in twisted WSe$_2$/WSe$_2$/MoSe$_2$ heterotrilayers

Authors: Chirag C. Palekar, Paulo E. Faria Junior, Barbara Rosa, Frederico B. Sousa, Leandro M. Malard, Jaroslav Fabian, Stephan Reitzenstein

Abstract: Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence yield of interlayer excitons. This limits the use of layered 2D materials as a versatile platform for developing innovative optoelectronic and spintronic devices.… ▽ More Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence yield of interlayer excitons. This limits the use of layered 2D materials as a versatile platform for developing innovative optoelectronic and spintronic devices. In this study, we report on the emission enhancement of interlayer excitons in multilayered-stacked monolayers through the fabrication of heterotrilayers consisting of WSe$_2$/WSe$_2$/MoSe$_2$ with differing twist angles. Our results show that an additional WSe$_2$ monolayer introduces new absorption pathways, leading to an improvement in the emission of interlayer excitons by more than an order of magnitude. The emission boost is affected by the twist angle, and we observe a tenfold increase in the heterotrilayer area when there is a 44$^\circ$ angle between the WSe$_2$ and MoSe$_2$ materials, as opposed to their heterobilayer counterparts. Furthermore, using density functional theory, we identify the emergence of new carrier transfer pathways in the three-layer sample which extends the current understanding of 2D semiconducting heterostructures. In addition, our research provides a viable way to significantly enhance the emission of interlayer excitons. The emission enhancement of interlayer excitons is significant not only for studying the fundamental properties of interlayer excitons, but also for enabling optoelectronic applications that utilize engineered 2D quantum materials with high luminescence yield. △ Less

Submitted 4 November, 2023; originally announced November 2023.

Charge transfer and asymmetric coupling of MoSe$_2$ valleys to the magnetic order of CrSBr

Authors: C. Serati de Brito, P. E. Faria Junior, T. S. Ghiasi, J. Ingla-Aynés, C. R. Rabahi, C. Cavalini, F. Dirnberger, S. Mañas-Valero, K. Watanabe, T. Taniguchi, K. Zollner, J. Fabian, C. Schüller, H. S. J. van der Zant, Y. Galvão Gobato, .

Abstract: Van der Waals (vdW) heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in non-magnetic TMDs. Here, we report magneto-photoluminescence (PL) investigations of monolayer (ML) MoSe$_2$ on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under dif… ▽ More Van der Waals (vdW) heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in non-magnetic TMDs. Here, we report magneto-photoluminescence (PL) investigations of monolayer (ML) MoSe$_2$ on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe$_2$, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley $g$-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first principles calculations suggest that MoSe$_2$/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices. △ Less

Submitted 7 September, 2023; originally announced September 2023.

Comments: 14 pages, 4 figures

Magneto-optical anisotropies of 2D antiferromagnetic MPX$_3$ from first principles

Authors: Miłosz Rybak, Paulo E. Faria Junior, Tomasz Woźniak, Paweł Scharoch, Jaroslav Fabian, Magdalena Birowska

Abstract: Here we systematically investigate the impact of the spin direction on the electronic and optical properties of transition metal phosphorus trichalcogenides (MPX$_3$, M=Mn, Ni, Fe; X=S, Se) exhibiting various antiferromagnetic arrangement within the 2D limit. Our analysis based on the density functional theory and versatile formalism of Bethe-Salpeter equation reveals larger exciton binding energi… ▽ More Here we systematically investigate the impact of the spin direction on the electronic and optical properties of transition metal phosphorus trichalcogenides (MPX$_3$, M=Mn, Ni, Fe; X=S, Se) exhibiting various antiferromagnetic arrangement within the 2D limit. Our analysis based on the density functional theory and versatile formalism of Bethe-Salpeter equation reveals larger exciton binding energies for MPS$_3$ (up to 1.1 eV in air) than MPSe$_3$(up to 0.8 eV in air), exceeding the values of transition metal dichalcogenides (TMDs). For the (Mn,Fe)PX$_3$ we determine the optically active band edge transitions, revealing that they are sensitive to in-plane magnetic order, irrespective of the type of chalcogen atom. We predict the anistropic effective masses and the type of linear polarization as an important fingerprints for sensing the type of magnetic AFM arrangements. Furthermore, we identify the spin-orientation-dependent features such as the valley splitting, the effective mass of holes, and the exciton binding energy. In particular, we demonstrate that for MnPX$_3$ (X=S, Se) a pair of non equivalent K+ and K- points exists yielding the valley splittings that strongly depend on the direction of AFM aligned spins. Notably, for the out-of-plane direction of spins, two distinct peaks are expected to be visible below the absorption onset, whereas one peak should emerge for the in-plane configuration of spins. These spin-dependent features provide an insight into spin flop transitions of 2D materials. Finally, we propose a strategy how the spin valley polarization can be realized in 2D AFM within honeycomb lattice. △ Less

Submitted 24 August, 2023; originally announced August 2023.

Comments: 20 pages, 8 figures, 11 tables

DFT2kp: effective kp models from ab-initio data

Authors: João Victor V. Cassiano, Augusto L. Araújo, Paulo E. Faria Junior, Gerson J. Ferreira

Abstract: The $\mathbf{k}\cdot\mathbf{p}$ method, combined with group theory, is an efficient approach to obtain the low energy effective Hamiltonians of crystalline materials. Although the Hamiltonian coefficients are written as matrix elements of the generalized momentum operator $\mathbfπぱい=\mathbf{p}+\mathbf{p}_{\rm SOC}$ (including spin-orbit coupling corrections), their numerical values must be determin… ▽ More The $\mathbf{k}\cdot\mathbf{p}$ method, combined with group theory, is an efficient approach to obtain the low energy effective Hamiltonians of crystalline materials. Although the Hamiltonian coefficients are written as matrix elements of the generalized momentum operator $\mathbfπぱい=\mathbf{p}+\mathbf{p}_{\rm SOC}$ (including spin-orbit coupling corrections), their numerical values must be determined from outside sources, such as experiments or ab initio methods. Here, we develop a code to explicitly calculate the Kane (linear in crystal momentum) and Luttinger (quadratic in crystal momentum) parameters of $\mathbf{k}\cdot\mathbf{p}$ effective Hamiltonians directly from ab initio wavefunctions provided by Quantum ESPRESSO. Additionally, the code analyzes the symmetry transformations of the wavefunctions to optimize the final Hamiltonian. This is an optional step in the code, where it numerically finds the unitary transformation $U$ that rotates the basis towards an optimal symmetry-adapted representation informed by the user. Throughout the paper, we present the methodology in detail and illustrate the capabilities of the code applying it to a selection of relevant materials. Particularly, we show a "hands-on" example of how to run the code for graphene (with and without spin-orbit coupling). The code is open source and available at https://gitlab.com/dft2kp/dft2kp. △ Less

Submitted 7 February, 2024; v1 submitted 14 June, 2023; originally announced June 2023.

Comments: 28 pages, 8 figures

Journal ref: SciPost Phys. Codebases 25 (2024)

Emergent Trion-Phonon Coupling in Atomically-Reconstructed MoSe$_2$-WSe$_2$ Heterobilayers

Authors: Sebastian Meier, Yaroslav Zhumagulov, Matthias Dietl, Philipp Parzefall, Michael Kempf, Johannes Holler, Philipp Nagler, Paulo E. Faria Junior, Jaroslav Fabian, Tobias Korn, Christian Schüller

Abstract: In low-temperature resonant Raman experiments on MoSe$_2$-WSe$_2$ heterobilayers, we identify a hybrid interlayer shear mode (HSM) with an energy, close to the interlayer shear mode (SM) of the heterobilayers, but with a much broader, asymmetric lineshape. The HSM shows a pronounced resonance with the intralayer hybrid trions (HX$^-$) of the MoSe$_2$ and WSe$_2$ layers, only. No resonance with the… ▽ More In low-temperature resonant Raman experiments on MoSe$_2$-WSe$_2$ heterobilayers, we identify a hybrid interlayer shear mode (HSM) with an energy, close to the interlayer shear mode (SM) of the heterobilayers, but with a much broader, asymmetric lineshape. The HSM shows a pronounced resonance with the intralayer hybrid trions (HX$^-$) of the MoSe$_2$ and WSe$_2$ layers, only. No resonance with the neutral intralayer excitons is found. First-principles calculations reveal a strong coupling of Q-valley states, which are delocalized over both layers and participate in the HX$^-$, with the SM. This emerging trion-phonon coupling may be relevant for experiments on gate-controlled heterobilayers. △ Less

Submitted 22 August, 2023; v1 submitted 2 June, 2023; originally announced June 2023.

Comments: 6 pages, 4 figures

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Authors: Zhao An, Pedro Soubelet, Yaroslav Zhumagulov, Michael Zopf, Alex Delhomme, Chenjiang Qian, Paulo E. Faria Junior, Jaroslav Fabian, Xin Cao, Jingzhong Yang, Andreas V. Stier, Fei Ding, Jonathan J. Finley

Abstract: The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hopping in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy of neutral excitons and negatively charged trions in monolayer MoSe$_2$ and WSe$_2$ under biaxial strain. We observe a marked enhancement(reduction) on the WSe… ▽ More The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hopping in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy of neutral excitons and negatively charged trions in monolayer MoSe$_2$ and WSe$_2$ under biaxial strain. We observe a marked enhancement(reduction) on the WSe$_2$ triplet trion valley polarization with compressive(tensile) strain while the trion in MoSe$_2$ is unaffected. The origin of this effect is shown to be a strain dependent tuning of the electron-hole exchange interaction. A combined analysis of the strain dependent polarization degree using ab initio calculations and rate equations shows that strain affects intervalley scattering beyond what is expected from strain dependent bandgap modulations. The results evidence how strain can be used to tune valley physics in energetically degenerate multi-valley systems. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Signatures of electric field and layer separation effects on the spin-valley physics of MoSe$_2$/WSe$_2$ heterobilayers: from energy bands to dipolar excitons

Authors: Paulo E. Faria Junior, Jaroslav Fabian

Abstract: We investigate the spin-valley physics (SVP) in MoSe$_2$/WSe$_2$ heterobilayers under external electric field (EF) and changes of the interlayer distance (ID). We analyze the spin ($S_z$) and orbital ($L_z$) degrees of freedom, and the symmetry properties of relevant band edges (at K, Q, and $Γがんま$ points) in high-symmetry stackings at 0 (R-type) and 60 (H-type) degree angles, the important building… ▽ More We investigate the spin-valley physics (SVP) in MoSe$_2$/WSe$_2$ heterobilayers under external electric field (EF) and changes of the interlayer distance (ID). We analyze the spin ($S_z$) and orbital ($L_z$) degrees of freedom, and the symmetry properties of relevant band edges (at K, Q, and $Γがんま$ points) in high-symmetry stackings at 0 (R-type) and 60 (H-type) degree angles, the important building blocks of moiré or atomically reconstructed structures. We reveal distinct hybridization signatures of $S_z$ and $L_z$ in low-energy bands due to the wave function mixing between the layers, which are stacking-dependent and can be further modified by EF and ID. The H-type stackings favor large changes in the g-factors under EF, e. g. from $-5$ to $3$ in the valence bands of the H$^h_h$ stacking, due to the opposite orientation of $S_z$ and $L_z$ in the individual monolayers. For the low-energy dipolar excitons (DEs), direct and indirect in $k$-space, we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. We found that direct DEs carry a robust valley Zeeman effect nearly independent of the EF but tunable by the ID, which can be experimentally accessible via applied external pressure. For the momentum-indirect DEs, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. For the indirect DEs with conduction bands at the Q point for H-type stackings, we found marked variations of the valley Zeeman ($\sim 4$) as a function of the EF that notably stand out from the other DE species. Stronger signatures of the coupled SVP are favored in H-type stackings, which can be experimentally investigated in $\sim 60^\text{o}$ samples. Our study provides fundamental insights into the SVP of van der Waals heterostructures, relevant to understand the valley Zeeman of DEs and intralayer excitons. △ Less

Submitted 8 April, 2023; v1 submitted 3 March, 2023; originally announced March 2023.

Comments: 19 pages, 15 figures, 8 tables

Journal ref: Nanomaterials 13, 1187 (2023)

Probing type-II Ising pairing using the spin-mixing parameter

Authors: Paulina Jureczko, Jozef Haniš, Paulo E. Faria Junior, Martin Gmitra, Marcin Kurpas

Abstract: The immunity of Ising superconductors to external magnetic fields originates from a spin locking of the paired electrons to an intrinsic Zeeman-like field. The spin-momentum locking in non-centrosymmetric crystalline materials leads to type-I Ising pairing in which the direction of the intrinsic field can be deduced from the spin expectation values. Conversely, in centrosymmetric crystals the elec… ▽ More The immunity of Ising superconductors to external magnetic fields originates from a spin locking of the paired electrons to an intrinsic Zeeman-like field. The spin-momentum locking in non-centrosymmetric crystalline materials leads to type-I Ising pairing in which the direction of the intrinsic field can be deduced from the spin expectation values. Conversely, in centrosymmetric crystals the electron spins locked to the orbitals can form Ising type-II pairs consisting of spin-orbit split doublets. Due to time-reversal symmetry, the doublets are spin degenerate, making it difficult to read the spin polarization of bands and the direction of spin-orbit fields. Here we present an efficient approach to determine the direction of the intrinsic field using the spin-mixing parameter $b^2$. Using first principles calculations based on the density functional theory, we study monolayer transition metal dichalcogenide superconductors PdTe$_2$, NbTe$_2$, and TiSe$_2$ with the 1T structure. We calculate $b^2$ for individual Fermi pockets and provide a general picture of possible Ising type-II pairing within the full Brillouin zone. In order to complement our first principles results, we use group theory to provide a detailed picture of spin-orbit coupling and spin mixing in the relevant bands forming Fermi pockets. We demonstrate that contrary to the anticipated effects of spin-orbit locking, not every spin-orbit split spin doublet actively participates in Ising pairing. Finally, by connecting the spin-mixing parameter $b^2$ with the intrinsic out-of-plane Zeeman field we estimate the upper in-plane critical magnetic field. △ Less

Submitted 26 March, 2024; v1 submitted 6 February, 2023; originally announced February 2023.

Proximity-enhanced valley Zeeman splitting at the WS$_2$/graphene interface

Authors: Paulo E. Faria Junior, Thomas Naimer, Kathleen M. McCreary, Berend T. Jonker, Jonathan J. Finley, Scott A. Crooker, Jaroslav Fabian, Andreas V. Stier

Abstract: The valley Zeeman physics of excitons in monolayer transition metal dichalcogenides provides valuable insight into the spin and orbital degrees of freedom inherent to these materials. Being atomically-thin materials, these degrees of freedom can be influenced by the presence of adjacent layers, due to proximity interactions that arise from wave function overlap across the 2D interface. Here, we re… ▽ More The valley Zeeman physics of excitons in monolayer transition metal dichalcogenides provides valuable insight into the spin and orbital degrees of freedom inherent to these materials. Being atomically-thin materials, these degrees of freedom can be influenced by the presence of adjacent layers, due to proximity interactions that arise from wave function overlap across the 2D interface. Here, we report 60 T magnetoreflection spectroscopy of the A- and B- excitons in monolayer WS$_2$, systematically encapsulated in monolayer graphene. While the observed variations of the valley Zeeman effect for the A- exciton are qualitatively in accord with expectations from the bandgap reduction and modification of the exciton binding energy due to the graphene-induced dielectric screening, the valley Zeeman effect for the B- exciton behaves markedly different. We investigate prototypical WS$_2$/graphene stacks employing first-principles calculations and find that the lower conduction band of WS$_2$ at the $K/K'$ valleys (the $CB^-$ band) is strongly influenced by the graphene layer on the orbital level. This leads to variations in the valley Zeeman physics of the B- exciton, consistent with the experimental observations. Our detailed microscopic analysis reveals that the conduction band at the $Q$ point of WS$_2$ mediates the coupling between $CB^-$ and graphene due to resonant energy conditions and strong coupling to the Dirac cone. Our results therefore expand the consequences of proximity effects in multilayer semiconductor stacks, showing that wave function hybridization can be a multi-step process with different bands mediating the interlayer interactions. Such effects can be exploited to resonantly engineer the spin-valley degrees of freedom in van der Waals and moiré heterostructures. △ Less

Submitted 28 January, 2023; originally announced January 2023.

Comments: 14 pages, 6 figures, 3 tables

Journal ref: 2D Materials 10, 034002 (2023)

Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe$_2$/MoSe$_2$ heterobilayers

Authors: Frank Volmer, Manfred Ersfeld, Paulo E. Faria Junior, Lutz Waldecker, Bharti Parashar, Lars Rathmann, Sudipta Dubey, Iulia Cojocariu, Vitaliy Feyer, Kenji Watanabe, Takashi Taniguchi, Claus M. Schneider, Lukasz Plucinski, Christoph Stampfer, Jaroslav Fabian, Bernd Beschoten

Abstract: We identify an optical excitation mechanism that transfers a valley polarization from photo-excited electron-hole pairs to free charge carriers in twisted WSe$_2$/MoSe$_2$ heterobilayers. For small twist angles, the valley lifetimes of the charge carriers are surprisingly short, despite the occurrence of interlayer excitons with their presumably long recombination and polarization lifetimes. For l… ▽ More We identify an optical excitation mechanism that transfers a valley polarization from photo-excited electron-hole pairs to free charge carriers in twisted WSe$_2$/MoSe$_2$ heterobilayers. For small twist angles, the valley lifetimes of the charge carriers are surprisingly short, despite the occurrence of interlayer excitons with their presumably long recombination and polarization lifetimes. For large twist angles, we measure an increase in both the valley polarization and its respective lifetime by more than two orders of magnitude. Interestingly, in such heterobilayers we observe an interlayer transfer of valley polarization from the WSe$_2$ layer into the MoSe$_2$ layer. This mechanism enables the creation of a photo-induced valley polarization of free charge carriers in MoSe$_2$, which amplitude scales with the gate-induced charge carrier density. This is in contrast to monolayer MoSe$_2$, where such a gate-tunable valley polarization cannot be achieved. By combining time-resolved Kerr rotation, photoluminesence and angle-resolved photoemission spectroscopy measurements with first principles calculations, we show that these findings can be explained by twist angle dependent interlayer scattering mechanisms involving the Q- and $Γがんま$-valleys. △ Less

Submitted 30 May, 2023; v1 submitted 30 November, 2022; originally announced November 2022.

Comments: 21 pages, 10 figures

Journal ref: npj 2D Mater. Appl. 7, 58 (2023)

Strong manipulation of the valley splitting upon twisting and gating in MoSe$_2$/CrI$_3$ and WSe$_2$/CrI$_3$ van der Waals heterostructures

Authors: Klaus Zollner, Paulo E. Faria Junior, Jaroslav Fabian

Abstract: We investigate the twist-angle and gate dependence of the proximity-induced exchange coupling in the monolayer transition-metal dichalcogenides (TMDCs) MoSe$_2$ and WSe$_2$ due to the vdW coupling to the ferromagnetic semiconductor CrI$_3$, from first-principles calculations. A model Hamiltonian, that captures the relevant band edges at the $K/K^{\prime}$ valleys of the proximitized TMDCs, is empl… ▽ More We investigate the twist-angle and gate dependence of the proximity-induced exchange coupling in the monolayer transition-metal dichalcogenides (TMDCs) MoSe$_2$ and WSe$_2$ due to the vdW coupling to the ferromagnetic semiconductor CrI$_3$, from first-principles calculations. A model Hamiltonian, that captures the relevant band edges at the $K/K^{\prime}$ valleys of the proximitized TMDCs, is employed to quantify the proximity-induced exchange. Upon twisting from 0° to 30°, we find a transition of the TMDC valence band (VB) edge exchange splitting from about $-2$ to $2$ meV, while the conduction band (CB) edge exchange splitting remains nearly unchanged at around $-3$ meV. For the VB of WSe$_2$ (MoSe$_2$) on CrI$_3$, the exchange coupling changes sign at around 8° (16°). We find that even at the angles with almost zero spin splittings of the VB, the real-space spin polarization profile of holes at the band edge is highly non-uniform, with alternating spin up and spin down orbitals. Furthermore, a giant tunability of the proximity-induced exchange coupling is provided by a transverse electric field of a few V/nm. We complement our \textit{ab initio} results by calculating the excitonic valley splitting to provide experimentally verifiable optical signatures of the proximity exchange. Specifically, we predict that the valley splitting increases almost linearly as a function of the twist angle. Furthermore, the proximity exchange is highly tunable by gating, allowing to tailor the valley splitting in the range of 0 to 12 meV in WSe$_2$/CrI$_3$, which is equivalent to external magnetic fields of up to about 60 Tesla. Our results highlight the important impact of the twist angle and gating when employing magnetic vdW heterostructures in experimental geometries. △ Less

Submitted 10 January, 2023; v1 submitted 25 October, 2022; originally announced October 2022.

Comments: 16 pages, 7 figures, 2 tables + Supplemental Material

Journal ref: Phys. Rev. B 107, 035112 (2023)

Electronic and Excitonic Properties of MSi2Z4 Monolayers

Authors: Tomasz Woźniak, Umm-e-hani Asghar, Paulo E. Faria Junior, Muhammad S. Ramzan, Agnieszka B. Kuc

Abstract: MA2Z4 monolayers form a new class of hexagonal non-centrosymmetric materials hosting extraordinary spin-valley physics. While only two compounds (MoSi2N4 and WSi2N4) were recently synthesized, theory predicts interesting (opto)electronic properties of a whole new family of such two-dimensional materials. Here, the chemical trends of band gaps and spin-orbit splittings of bands in selected MSi2Z4 (… ▽ More MA2Z4 monolayers form a new class of hexagonal non-centrosymmetric materials hosting extraordinary spin-valley physics. While only two compounds (MoSi2N4 and WSi2N4) were recently synthesized, theory predicts interesting (opto)electronic properties of a whole new family of such two-dimensional materials. Here, the chemical trends of band gaps and spin-orbit splittings of bands in selected MSi2Z4 (M = Mo, W; Z = N, P, As, Sb) compounds are studied from first-principles. Effective Bethe-Salpeter-equation-based calculations reveal high exciton binding energies. Evolution of excitonic energies under external magnetic field is predicted by providing their effective g-factors and diamagnetic coefficients, which can be directly compared to experimental values. In particular, large positive g-factors are predicted for excitons involving higher conduction bands. In view of these predictions, MSi2Z4 monolayers yield a new platform to study excitons and are attractive for optoelectronic devices, also in the forms of heterostructures. In addition, a spin-orbit induced bands inversion is observed in the heaviest studied compound, WSi2Sb4, a hallmark of its topological nature. △ Less

Submitted 19 October, 2022; originally announced October 2022.

Ultrafast pseudospin quantum beats in multilayer WSe$_2$ and MoSe$_2$

Authors: Simon Raiber, Paulo E. Faria Junior, Dennis Falter, Simon Feldl, Petter Marzena, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Christian Schüller

Abstract: Layered van-der-Waals materials with hexagonal symmetry offer an extra degree of freedom to their electrons, the so called valley index or valley pseudospin. This quantity behaves conceptually like the electron spin and the term valleytronics has been coined. In this context, the group of semiconducting transition-metal dichalcogenides (TMDC) are particularly appealing, due to large spin-orbit int… ▽ More Layered van-der-Waals materials with hexagonal symmetry offer an extra degree of freedom to their electrons, the so called valley index or valley pseudospin. This quantity behaves conceptually like the electron spin and the term valleytronics has been coined. In this context, the group of semiconducting transition-metal dichalcogenides (TMDC) are particularly appealing, due to large spin-orbit interactions and a direct bandgap at the K points of the hexagonal Brillouin zone. In this work, we present investigations of excitonic transitions in mono- and multilayer WSe$_2$ and MoSe$_2$ materials by time-resolved Faraday ellipticity (TRFE) with in-plane magnetic fields, $B_{\parallel}$, of up to 9 T. In monolayer samples, the measured TRFE time traces are almost independent of $B_{\parallel}$, which confirms a close to zero in-plane exciton $g$ factor $g_\parallel$, consistent with first-principles calculations. In stark contrast, we observe pronounced temporal oscillations in multilayer samples for $B_{\parallel}>0$. Remarkably, the extracted in-plane $g_\parallel$ are very close to reported out-of-plane exciton $g$ factors of the materials, namely $|g_{\parallel 1s}|=3.1\pm 0.2$ and $2.5\pm0.2$ for the 1s A excitons in WSe$_2$ and MoSe$_2$ multilayers, respectively. Our first-principles calculations nicely confirm the presence of a non-zero $g_{\parallel}$ for the multilayer samples. We propose that the oscillatory TRFE signal in the multilayer samples is caused by pseudospin quantum beats of excitons, which is a manifestation of spin- and pseudospin layer locking in the multilayer samples. Our results demonstrate ultrafast pseudospin rotations in the GHz- to THz frequency range, which pave the way towards ultrafast pseudospin manipulation in multilayer TMDC samples. △ Less

Submitted 26 April, 2022; originally announced April 2022.

Comments: 9 pages, 3 figures

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Authors: Viola Zeller, Nadine Mundigl, Paulo E. Faria Junior, Jaroslav Fabian, Christian Schüller, Dominique Bougeard

Abstract: We report GaAs/AlGaAs nanowires in the one-dimensional (1D) quantum limit. The ultrathin wurtzite GaAs cores between 20-40\,nm induce large confinement energies of several tens of meV, allowing us to experimentally resolve up to four well separated subband excitations in microphotoluminescence spectroscopy. Our detailed experimental and theoretical polarization-resolved study reveals a strong diam… ▽ More We report GaAs/AlGaAs nanowires in the one-dimensional (1D) quantum limit. The ultrathin wurtzite GaAs cores between 20-40\,nm induce large confinement energies of several tens of meV, allowing us to experimentally resolve up to four well separated subband excitations in microphotoluminescence spectroscopy. Our detailed experimental and theoretical polarization-resolved study reveals a strong diameter-dependent anisotropy of these transitions: We demonstrate that the polarization of the detected photoluminescence is governed by the symmetry of the wurtzite 1D quantum wire subbands on the one hand, but also by the dielectric mismatch of the wires with the surrounding material on the other hand. The latter effect leads to a strong attenuation of perpendicularly polarized light in thin dielectric wires, making the thickness of the AlGaAs shell an important factor in the observed polarization behavior. Including the dielectric mismatch to our k.p-based simulated polarization-resolved spectra of purely wurtzite GaAs quantum wires, we find an excellent agreement between experiment and theory. △ Less

Submitted 21 April, 2022; originally announced April 2022.

Journal ref: Phys. Rev. Appl. 18, 054014 (2022)

Sensitivity of the MnTe valence band to orientation of magnetic moments

Authors: Paulo E. Faria Junior, Koen A. de Mare, Klaus Zollner, Sigurdur I. Erlingsson, Mark van Schilfgaarde, Karel Vyborny

Abstract: An effective model of the hexagonal (NiAs-structure) manganese telluride valence band in the vicinity of the A-point of the Brillouin zone is derived. It is shown that while for the usual antiferromagnetic order (magnetic moments in the basal plane) band splitting at A is small, their out-of-plane rotation enhances the splitting dramatically (to about 0.5 eV). We propose extensions of recent exper… ▽ More An effective model of the hexagonal (NiAs-structure) manganese telluride valence band in the vicinity of the A-point of the Brillouin zone is derived. It is shown that while for the usual antiferromagnetic order (magnetic moments in the basal plane) band splitting at A is small, their out-of-plane rotation enhances the splitting dramatically (to about 0.5 eV). We propose extensions of recent experiments (Moseley et al., Phys. Rev. Materials 6, 014404) where such inversion of magnetocrystalline anisotropy has been observed in Li-doped MnTe, to confirm this unusual sensitivity of a semiconductor band structure to magnetic order. △ Less

Submitted 16 February, 2023; v1 submitted 6 April, 2022; originally announced April 2022.

Comments: 5+epsilon pages, 4 figures; to appear in PRB

Strong substrate strain effects in multilayered WS2 revealed by high-pressure optical measurements

Authors: Robert Oliva, Tomasz Woźniak, Paulo E. Faria Junior, Filip Dybała, Jan Kopaczek, Jaroslav Fabian, Paweł Scharoch, Robert Kudrawiec

Abstract: The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculations based on density functional theory and the effective Bethe-Salpeter equation with high-pressure optical measurements in order to thoroughly describe the effect of strain and dielectric environment onto the electroni… ▽ More The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculations based on density functional theory and the effective Bethe-Salpeter equation with high-pressure optical measurements in order to thoroughly describe the effect of strain and dielectric environment onto the electronic band structure and optical properties of a few-layered transition metal dichalcogenide. Our results show that WS2 remains fully adhered to the substrate at least up to a -0.6% in-plane compressive strain for a wide range of substrate materials. We provide a useful model to describe effect of strain on the optical gap energy. The corresponding experimentally-determined out-of-plane and in-plane stress gauge factors for WS2 monolayers are -8 and 24 meV/GPa, respectively. The exceptionally large in-plane gauge factor confirm transition metal dichalcogenides as very promising candidates for flexible functionalities. Finally, we discuss the pressure evolution of an optical transition closely-lying to the A exciton for bulk WS2 as well as the direct-to-indirect transition of the monolayer upon compression. △ Less

Submitted 31 March, 2022; v1 submitted 17 February, 2022; originally announced February 2022.

Comments: 39 pages, 13 figures

Effect of Rashba and Dresselhaus spin-orbit coupling on supercurrent rectification and magnetochiral anisotropy of ballistic Josephson junctions

Authors: Christian Baumgartner, Lorenz Fuchs, Andreas Costa, Jordi Pico Cortes, Simon Reinhardt, Sergei Gronin, Geoffrey C. Gardner, Tyler Lindemann, Michael J. Manfra, Paulo E. Faria Junior, Denis Kochan, Jaroslav Fabian, Nicola Paradiso, Christoph Strunk

Abstract: Simultaneous breaking of inversion- and time-reversal symmetry in Josephson junction leads to a possible violation of the $I(\varphi)=-I(-\varphi)$ equality for the current-phase relation. This is known as anomalous Josephson effect and it produces a phase shift $\varphi_0$ in sinusoidal current-phase relations. In ballistic Josephson junctions with non-sinusoidal current phase relation the observ… ▽ More Simultaneous breaking of inversion- and time-reversal symmetry in Josephson junction leads to a possible violation of the $I(\varphi)=-I(-\varphi)$ equality for the current-phase relation. This is known as anomalous Josephson effect and it produces a phase shift $\varphi_0$ in sinusoidal current-phase relations. In ballistic Josephson junctions with non-sinusoidal current phase relation the observed phenomenology is much richer, including the supercurrent diode effect and the magnetochiral anisotropy of Josephson inductance. In this work, we present measurements of both effects on arrays of Josephson junctions defined on epitaxial Al/InAs heterostructures. We show that the orientation of the current with respect to the lattice affects the magnetochiral anisotropy, possibly as the result of a finite Dresselhaus component. In addition, we show that the two-fold symmetry of the Josephson inductance reflects in the activation energy for phase slips. △ Less

Submitted 12 January, 2022; v1 submitted 27 November, 2021; originally announced November 2021.

Comments: 9 pages, 4 figures

A Josephson junction supercurrent diode

Authors: Christian Baumgartner, Lorenz Fuchs, Andreas Costa, Simon Reinhardt, Sergei Gronin, Geoffrey C. Gardner, Tyler Lindemann, Michael J. Manfra, Paulo E. Faria Junior, Denis Kochan, Jaroslav Fabian, Nicola Paradiso, Christoph Strunk

Abstract: Transport is called nonreciprocal when not only the sign, but also the absolute value of the current, depends on the polarity of the applied voltage. It requires simultaneously broken inversion and time-reversal symmetries, e.g., by the interplay of spin-orbit coupling and magnetic field. So far, observation of nonreciprocity was always tied to resistivity, and dissipationless nonreciprocal circui… ▽ More Transport is called nonreciprocal when not only the sign, but also the absolute value of the current, depends on the polarity of the applied voltage. It requires simultaneously broken inversion and time-reversal symmetries, e.g., by the interplay of spin-orbit coupling and magnetic field. So far, observation of nonreciprocity was always tied to resistivity, and dissipationless nonreciprocal circuit elements were elusive. Here, we engineer fully superconducting nonreciprocal devices based on highly-transparent Josephson junctions fabricated on InAs quantum wells. We demonstrate supercurrent rectification far below the transition temperature. By measuring Josephson inductance, we can link nonreciprocal supercurrent to the asymmetry of the current-phase relation, and directly derive the supercurrent magnetochiral anisotropy coefficient for the first time. A semi-quantitative model well explains the main features of our experimental data. Nonreciprocal Josephson junctions have the potential to become for superconducting circuits what $pn$-junctions are for traditional electronics, opening the way to novel nondissipative circuit elements. △ Less

Submitted 11 March, 2021; originally announced March 2021.

Comments: 16 pages, 11 figures

Journal ref: Nature Nanotechnology (2021)

Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors

Authors: Kai-Qiang Lin, Paulo E. Faria Junior, Jonas M. Bauer, Bo Peng, Bartomeu Monserrat, Martin Gmitra, Jaroslav Fabian, Sebastian Bange, John M. Lupton

Abstract: Twist-engineering of the electronic structure of van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore not particularly susceptible to twisting. Here, we report that high-lying excitons in bilayer WSe2 c… ▽ More Twist-engineering of the electronic structure of van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore not particularly susceptible to twisting. Here, we report that high-lying excitons in bilayer WSe2 can be tuned over 235 meV by twisting, with a twist-angle susceptibility of 8.1 meV/°, an order of magnitude larger than that of the band-edge A-exciton. This tunability arises because the electronic states associated with upper conduction bands delocalize into the chalcogenide atoms. The effect gives control over excitonic quantum interference, revealed in selective activation and deactivation of electromagnetically induced transparency (EIT) in second-harmonic generation. Such a degree of freedom does not exist in conventional dilute atomic-gas systems, where EIT was originally established, and allows us to shape the frequency dependence, i.e. the dispersion, of the optical nonlinearity. △ Less

Submitted 22 February, 2021; originally announced February 2021.

Journal ref: Nature Communications 12, 1553 (2021)

Large exciton binding energies in MnPS$_3$ as a case study of vdW layered magnet

Authors: Magdalena Birowska, Paulo E. Faria Junior, Jaroslav Fabian, Jens Kunstmann

Abstract: Stable excitons in semiconductor monolayers such as transition-metal dichalcogenides (TMDCs) enable and motivate fundamental research as well as the development of room-temperature optoelectronics applications. The newly discovered layered magnetic materials present a unique opportunity to integrate optical functionalities with magnetism. We predict that a large class of antiferromagnetic semicond… ▽ More Stable excitons in semiconductor monolayers such as transition-metal dichalcogenides (TMDCs) enable and motivate fundamental research as well as the development of room-temperature optoelectronics applications. The newly discovered layered magnetic materials present a unique opportunity to integrate optical functionalities with magnetism. We predict that a large class of antiferromagnetic semiconducting monolayers of the MPX$_3$ family exhibit giant excitonic binding energies, making them suitable platforms for magneto-optical investigations and optospintronics applications. Indeed, our investigations, based on first principles methods combined with an effective-model Bethe-Salpeter solver, show that excitons in bare Neel-MnPS$_3$ are bound by more than 1 eV, which is twice the excitonic energies in TMDCs. In addition, the antiferromagnetic ordering of monolayer samples can be inferred indirectly using different polarization of light. △ Less

Submitted 18 February, 2021; v1 submitted 10 September, 2020; originally announced September 2020.

Comments: 10 pages, 4 figures, 7 tables

Journal ref: Phys. Rev. B 103, 121108 (2021)

Bright excitons with negative-mass electrons

Authors: Kai-Qiang Lin, Chin Shen Ong, Sebastian Bange, Paulo E. Faria Junior, Bo Peng, Jonas D. Ziegler, Jonas Zipfel, Christian Bäuml, Nicola Paradiso, Kenji Watanabe, Takashi Taniguchi, Christoph Strunk, Bartomeu Monserrat, Jaroslav Fabian, Alexey Chernikov, Diana Y. Qiu, Steven G. Louie, John M. Lupton

Abstract: Bound electron-hole excitonic states are generally not expected to form with charges of negative effective mass. We identify such excitons in a single layer of the semiconductor WSe2, where they give rise to narrow-band upconverted photoluminescence in the UV, at an energy of 1.66 eV above the first band-edge excitonic transition. Negative band curvature and strong electron-phonon coupling result… ▽ More Bound electron-hole excitonic states are generally not expected to form with charges of negative effective mass. We identify such excitons in a single layer of the semiconductor WSe2, where they give rise to narrow-band upconverted photoluminescence in the UV, at an energy of 1.66 eV above the first band-edge excitonic transition. Negative band curvature and strong electron-phonon coupling result in a cascaded phonon progression with equidistant peaks in the photoluminescence spectrum, resolvable to ninth order. Ab initio GW-BSE calculations with full electron-hole correlations unmask and explain the admixture of upper conduction-band states to this complex many-body excitation: an optically bright, bound exciton in resonance with the semiconductor continuum. This exciton is responsible for atomic-like quantum-interference phenomena such as electromagnetically induced transparency. Since band curvature can be tuned by pressure or strain, synthesis of exotic quasiparticles such as flat-band excitons with infinite reduced mass becomes feasible. △ Less

Submitted 25 June, 2020; originally announced June 2020.

Journal ref: Nature Communications 12, 5500 (2021)

Trion induced photoluminescence of a doped MoS2 monolayer

Authors: Yaroslav V. Zhumagulov, Alexei Vagov, Paulo E. Faria Junior, Dmitry R. Gulevich, Vasili Perebeinos

Abstract: We demonstrate that the temperature and doping dependencies of the photoluminescence (PL) spectra of a doped MoS2 monolayer have several peculiar characteristics defined by trion radiative decay. While only zero-momentum exciton states are coupled to light, radiative recombination of non-zero momentum trions is also allowed. This leads to an asymmetric broadening of the trion spectral peak and red… ▽ More We demonstrate that the temperature and doping dependencies of the photoluminescence (PL) spectra of a doped MoS2 monolayer have several peculiar characteristics defined by trion radiative decay. While only zero-momentum exciton states are coupled to light, radiative recombination of non-zero momentum trions is also allowed. This leads to an asymmetric broadening of the trion spectral peak and redshift of the emitted light with increasing temperature. The lowest energy trion state is dark, which is manifested by the sharply non-monotonic temperature dependence of the PL intensity. Our calculations combine the Dirac model for the single-particle states, the parameters for which are obtained from the first principle calculations, and the direct solution of the three-particle problem within the Tamm-Dancoff approximation. The numerical results are well captured by a simple model that yields analytical expressions for the temperature dependencies of the PL spectra. △ Less

Submitted 12 February, 2021; v1 submitted 19 May, 2020; originally announced May 2020.

Comments: 10 pages, 6 figures

Journal ref: J. Chem. Phys. 153, 044132 (2020)

Spin-Lasers: Spintronics Beyond Magnetoresistance

Authors: Igor Žutić, Gaofeng Xu, Markus Lindemann, Paulo E. Faria Junior, Jeongsu Lee, Velimir Labinac, Kristian Stojšić, Guilherme M. Sipahi, Martin R. Hofmann, Nils C. Gerhardt

Abstract: Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-laser… ▽ More Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics. △ Less

Submitted 1 May, 2020; originally announced May 2020.

Comments: 22 pages and 21 figures, invited review for a special issue on spintronics in Solid State Commun

Journal ref: Solid State Commun. 316-317, 113949 (2020)

Exciton g-factors of van der Waals heterostructures from first principles calculations

Authors: Tomasz Woźniak, Paulo E. Faria Junior, Gotthard Seifert, Andrey Chaves, Jens Kunstmann

Abstract: External fields are a powerful tool to probe optical excitations in a material. The linear energy shift of an excitation in a magnetic field is quantified by its effective g-factor. Here we show how exciton g-factors and their sign can be determined by converged first principles calculations. We apply the method to monolayer excitons in semiconducting transition metal dichalcogenides and to interl… ▽ More External fields are a powerful tool to probe optical excitations in a material. The linear energy shift of an excitation in a magnetic field is quantified by its effective g-factor. Here we show how exciton g-factors and their sign can be determined by converged first principles calculations. We apply the method to monolayer excitons in semiconducting transition metal dichalcogenides and to interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers and obtain good agreement with recent experimental data. The precision of our method allows to assign measured g-factors of optical peaks to specific transitions in the band structure and also to specific regions of the samples. This revealed the nature of various, previously measured interlayer exciton peaks. We further show that, due to specific optical selection rules, g-factors in van der Waals heterostructures are strongly spin- and stacking-dependent. The calculation of orbital angular momenta requires the summation over hundreds of bands, indicating that for the considered two-dimensional materials the basis set size is a critical numerical issue. The presented approach can potentially be applied to a wide variety of semiconductors. △ Less

Submitted 26 April, 2020; v1 submitted 6 February, 2020; originally announced February 2020.

Comments: 29 pages, 4 figures, 2 tables

Journal ref: Phys. Rev. B 101, 235408 (2020)

Giant proximity exchange and valley splitting in transition metal dichalcogenide/$h\mathrm{BN}$/(Co, Ni) heterostructures

Authors: Klaus Zollner, Paulo E. Faria Junior, Jaroslav Fabian

Abstract: We investigate the proximity-induced exchange coupling in transition-metal dichalcogenides (TMDCs), originating from spin injector geometries composed of hexagonal boron-nitride (hBN) and ferromagnetic (FM) cobalt (Co) or nickel (Ni), from first-principles. We employ a minimal tight-binding Hamiltonian that captures the low energy bands of the TMDCs around K and K' valleys, to extract orbital, spi… ▽ More We investigate the proximity-induced exchange coupling in transition-metal dichalcogenides (TMDCs), originating from spin injector geometries composed of hexagonal boron-nitride (hBN) and ferromagnetic (FM) cobalt (Co) or nickel (Ni), from first-principles. We employ a minimal tight-binding Hamiltonian that captures the low energy bands of the TMDCs around K and K' valleys, to extract orbital, spin-orbit, and exchange parameters. The TMDC/hBN/FM heterostructure calculations show that due to the hBN buffer layer, the band structure of the TMDC is preserved, with an additional proximity-induced exchange splitting in the bands. We extract proximity exchange parameters in the 1--10 meV range, depending on the FM. The combination of proximity-induced exchange and intrinsic spin-orbit coupling (SOC) of the TMDCs, leads to a valley polarization, translating into magnetic exchange fields of tens of Tesla. The extracted parameters are useful for subsequent exciton calculations of TMDCs in the presence of a hBN/FM spin injector. Our calculated absorption spectra show large splittings for the exciton peaks; in the case of MoS$_2$/hBN/Co we find a value of about 8 meV, corresponding to about 50 Tesla external magnetic field in bare TMDCs. The reason lies in the band structure, where a hybridization with Co $d$ orbitals causes a giant valence band exchange splitting of more than 10 meV. Structures with Ni do not show any $d$ level hybridization features, but still sizeable proximity exchange and exciton peak splittings of around 2 meV are present in the TMDCs. △ Less

Submitted 11 February, 2020; v1 submitted 29 October, 2019; originally announced October 2019.

Comments: 13 pages, 9 figures, 5 tables

Journal ref: Phys. Rev. B 101, 085112 (2020)

Strain-tunable orbital, spin-orbit, and optical properties of monolayer transition-metal dichalcogenides

Authors: Klaus Zollner, Paulo E. Faria Junior, Jaroslav Fabian

Abstract: When considering transition-metal dichalcogenides (TMDCs) in van der Waals (vdW) heterostructures for periodic ab-initio calculations, usually, lattice mismatch is present, and the TMDC needs to be strained. In this study we provide a systematic assessment of biaxial strain effects on the orbital, spin-orbit, and optical properties of the monolayer TMDCs using ab-initio calculations. We complement… ▽ More When considering transition-metal dichalcogenides (TMDCs) in van der Waals (vdW) heterostructures for periodic ab-initio calculations, usually, lattice mismatch is present, and the TMDC needs to be strained. In this study we provide a systematic assessment of biaxial strain effects on the orbital, spin-orbit, and optical properties of the monolayer TMDCs using ab-initio calculations. We complement our analysis with a minimal tight-binding Hamiltonian that captures the low-energy bands of the TMDCs around K and K' valleys. We find characteristic trends of the orbital and spin-orbit parameters as a function of the biaxial strain. Specifically, the orbital gap decreases linearly, while the valence (conduction) band spin splitting increases (decreases) nonlinearly in magnitude when the lattice constant increases. Furthermore, employing the Bethe-Salpeter equation and the extracted parameters, we show the evolution of several exciton peaks, with biaxial strain, on different dielectric surroundings, which are particularly useful for interpreting experiments studying strain-tunable optical spectra of TMDCs. △ Less

Submitted 19 November, 2019; v1 submitted 24 September, 2019; originally announced September 2019.

Comments: 11 pages, 7 figures, 5 tables

Journal ref: Phys. Rev. B 100, 195126 (2019)

Spin-orbit coupling in elemental two-dimensional materials

Authors: Marcin Kurpas, Paulo E. Faria Junior, Martin Gmitra, Jaroslav Fabian

Abstract: The fundamental spin-orbit coupling and spin mixing in graphene and rippled honeycomb lattice materials silicene, germanene, stanene, blue phosphorene, arsenene, antimonene, and bismuthene is investigated from first principles. The intrinsic spin-orbit coupling in graphene is revisited using multi-band $k\cdot p$ theory, showing the presence of non-zero spin mixing in graphene despite the mirror s… ▽ More The fundamental spin-orbit coupling and spin mixing in graphene and rippled honeycomb lattice materials silicene, germanene, stanene, blue phosphorene, arsenene, antimonene, and bismuthene is investigated from first principles. The intrinsic spin-orbit coupling in graphene is revisited using multi-band $k\cdot p$ theory, showing the presence of non-zero spin mixing in graphene despite the mirror symmetry. However, the spin mixing itself does not lead to the the Elliott-Yafet spin relaxation mechanism, unless the mirror symmetry is broken by external factors. For other aforementioned elemental materials we present the spin-orbit splittings at relevant symmetry points, as well as the spin admixture $b^2$ as a function of energy close to the band extrema or Fermi levels. We find that spin-orbit coupling scales as the square of the atomic number Z, as expected for valence electrons in atoms. For isolated bands, it is found that $b^2\sim Z^4$. The spin-mixing parameter also exhibits giant anisotropy which, to a large extent, can be controlled by tuning the Fermi level. Our results for $b^2$ can be directly transferred to spin relaxation time due to the Elliott-Yafet mechanism, and therefore provide an estimate of the upper limit for spin lifetimes in materials with space inversion center. △ Less

Submitted 11 July, 2019; originally announced July 2019.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 100, 125422 (2019)

$k \cdot p$ theory for phosphorene: Effective g-factors, Landau levels, and excitons

Authors: Paulo E. Faria Junior, Marcin Kurpas, Martin Gmitra, Jaroslav Fabian

Abstract: Phosphorene, a single layer of black phosphorus, is a direct-band gap two-dimensional semiconductor with promising charge and spin transport properties. The electronic band structure of phosphorene is strongly affected by the structural anisotropy of the underlying crystal lattice. We describe the relevant conduction and valence bands close to the $Γがんま$ point by four- and six-band (with spin)… ▽ More Phosphorene, a single layer of black phosphorus, is a direct-band gap two-dimensional semiconductor with promising charge and spin transport properties. The electronic band structure of phosphorene is strongly affected by the structural anisotropy of the underlying crystal lattice. We describe the relevant conduction and valence bands close to the $Γがんま$ point by four- and six-band (with spin) $k \cdot p$ models, including the previously overlooked interband spin-orbit coupling which is essential for studying anisotropic crystals. All the $k \cdot p$ parameters are obtained by a robust fit to {\it ab initio} data, by taking into account the nominal band structure and the $k$-dependence of the effective mass close to $Γがんま$-point. The inclusion of interband spin-orbit coupling allows us to determine dipole transitions along both armchair and zigzag directions. The interband coupling is also key to determine the effective g-factors and Zeeman splittings of the Landau levels. We predict the electron and hole g-factor correction of $\approx 0.03$ due to the intrinsic contributions in phosphorene, which lies within the existing range of experimental data. Furthermore, we investigate excitonic effects using the $k \cdot p$ models and find exciton binding energy (0.81 eV) and exciton diameters consistent with experiments and {\it ab initio} based calculations. The proposed $k \cdot p$ Hamiltonians should be useful for investigating magnetic, spin, transport, optical properties and many-body effects in phosphorene. △ Less

Submitted 19 September, 2019; v1 submitted 23 April, 2019; originally announced April 2019.

Comments: 6 figures, 2 tables

Journal ref: Phys. Rev. B 100, 115203 (2019)

Proximity exchange effects in MoSe$_2$ and WSe$_2$ heterostructures with CrI$_3$: twist angle, layer, and gate dependence

Authors: Klaus Zollner, Paulo E. Faria Junior, Jaroslav Fabian

Abstract: Proximity effects in two-dimensional (2D) van der Waals heterostructures offer controllable ways to tailor the electronic band structure of adjacent materials. Exchange proximity in particular is important for making materials magnetic without hosting magnetic ions. Such synthetic magnets could be used for studying magnetotransport in high-mobility 2D materials, or magneto-optics in highly absorpt… ▽ More Proximity effects in two-dimensional (2D) van der Waals heterostructures offer controllable ways to tailor the electronic band structure of adjacent materials. Exchange proximity in particular is important for making materials magnetic without hosting magnetic ions. Such synthetic magnets could be used for studying magnetotransport in high-mobility 2D materials, or magneto-optics in highly absorptive nominally nonmagnetic semiconductors. Using first-principles calculations, we show that the proximity exchange in monolayer MoSe$_2$ and WSe$_2$ due to ferromagnetic monolayer CrI$_3$ can be tuned (even qualitatively) by twisting and gating. Remarkably, the proximity exchange remains the same when using antiferromagnetic CrI$_3$ bilayer, paving the way for optical and electrical detection of layered antiferromagnets. Interestingly, the proximity exchange is opposite to the exchange of the adjacent antiferromagnetic layer. Finally, we show that the exchange proximity is confined to the layer adjacent to CrI$_3$, and that adding a separating hBN barrier drastically reduces the proximity effect. We complement our it ab initio results with tight-binding modeling and solve the Bethe-Salpeter equation to provide experimentally verifiable optical signatures (in the exciton spectra) of the proximity exchange effects. △ Less

Submitted 2 September, 2019; v1 submitted 5 February, 2019; originally announced February 2019.

Comments: manuscript (10 pages, 4 figures, 1 table) + supplementary (11 pages, 9 figures, 2 tables)

Journal ref: Phys. Rev. B 100, 085128 (2019)

Common nonlinear features and spin-orbit coupling effects in the Zeeman splitting of novel wurtzite materials

Authors: Paulo E. Faria Junior, Davide Tedeschi, Marta De Luca, Benedikt Scharf, Antonio Polimeni, Jaroslav Fabian

Abstract: The response of semiconductor materials to external magnetic fields is a reliable approach to probe intrinsic electronic and spin-dependent properties. In this study, we investigate the common Zeeman splitting features of novel wurtzite materials, namely InP, InAs, and GaAs. We present values for the effective g-factors of different energy bands and show that spin-orbit coupling effects, responsib… ▽ More The response of semiconductor materials to external magnetic fields is a reliable approach to probe intrinsic electronic and spin-dependent properties. In this study, we investigate the common Zeeman splitting features of novel wurtzite materials, namely InP, InAs, and GaAs. We present values for the effective g-factors of different energy bands and show that spin-orbit coupling effects, responsible for the spin splittings, also have noticeable contributions to the g-factors. Within the Landau level picture, we show that the nonlinear Zeeman splitting recently explained in magneto photoluminescence experiments for InP nanowires by Tedeschi et al. [Phys. Rev. B 99, 161204 (2019)] are also present in InAs, GaAs and even in the conventional GaN. Such nonlinear features stem from the peculiar coupling of the A and B valence bands, as a consequence of the interplay between the wurtzite crystal symmetry and the breaking of time-reversal symmetry by the external magnetic field. Moreover, we develop an analytical model to describe the experimental nonlinear Zeeman splitting and apply it to InP and GaAs data. Extrapolating our fitted results, we found that the Zeeman splitting of InP reaches a maximum value, which is a prediction that could be probed at higher magnetic fields. △ Less

Submitted 28 August, 2019; v1 submitted 22 November, 2018; originally announced November 2018.

Comments: 6 figures, 2 tables

Journal ref: Phys. Rev. B 99, 195205 (2019)

Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy

Authors: D. Tedeschi, M. De Luca, P. E. Faria Junior, A. Granados del Águila, Q. Gao, H. H. Tan, B. Scharf, P. C. M. Christianen, C. Jagadish, J. Fabian, A. Polimeni

Abstract: In this study, we present a complete experimental and theoretical investigation of the fundamental exciton Zeeman splitting in wurtzite InP nanowires. We determined the exciton gyromagnetic factor, $g_{exc}$, by magneto-photoluminescence spectroscopy using magnetic fields up to 29 T. We found that $g_{exc}$ is strongly anisotropic with values differing in excess of 50\% between the magnetic field… ▽ More In this study, we present a complete experimental and theoretical investigation of the fundamental exciton Zeeman splitting in wurtzite InP nanowires. We determined the exciton gyromagnetic factor, $g_{exc}$, by magneto-photoluminescence spectroscopy using magnetic fields up to 29 T. We found that $g_{exc}$ is strongly anisotropic with values differing in excess of 50\% between the magnetic field oriented parallel and perpendicular to the nanowire long axis. Furthermore, for magnetic fields oriented along the nanowire axis, $g_{exc}$ is nearly three times larger than in bulk zincblende InP and it shows a marked sublinear dependence on the magnetic field, a common feature to other non-nitride III-V wurtzite nanowires but not properly understood. Remarkably, this nonlinearity originates from only one Zeeman branch characterized by a specific type of light polarization. All the experimental findings are modeled theoretically by a robust approach combining the $k \cdot p$ method with the envelope function approximation and including the electron-hole interaction. We revealed that the nonlinear features arise due to the coupling between Landau levels pertaining to the A (heavy-hole like) and B (light-hole like) valence bands of the wurtzite crystal structure. This general behavior is particularly relevant for the understanding of the spin properties of several wurtzite nanowires that host the set for the observation of topological phases potentially at the base of quantum computing platforms. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 99, 161204 (2019)

Ultralong spin lifetimes in one-dimensional semiconductor nanowires

Authors: Florian Dirnberger, Michael Kammermeier, Jan König, Moritz Forsch, Paulo E. Faria Junior, Tiago Campos, Jaroslav Fabian, John Schliemann, Christian Schüller, Tobias Korn, Paul Wenk, Dominique Bougeard

Abstract: We experimentally demonstrate ultralong spin lifetimes of electrons in the one-dimensional (1D) quantum limit of semiconductor nanowires. Optically probing single wires of different diameters reveals an increase in the spin relaxation time by orders of magnitude as the electrons become increasingly confined until only a single 1D subband is populated. We find the observed spin lifetimes of more th… ▽ More We experimentally demonstrate ultralong spin lifetimes of electrons in the one-dimensional (1D) quantum limit of semiconductor nanowires. Optically probing single wires of different diameters reveals an increase in the spin relaxation time by orders of magnitude as the electrons become increasingly confined until only a single 1D subband is populated. We find the observed spin lifetimes of more than $200\,\textrm{ns}$ to result from the robustness of 1D electrons against major spin relaxation mechanisms, highlighting the promising potential of these wires for long-range transport of coherent spin information. △ Less

Submitted 21 May, 2019; v1 submitted 21 September, 2018; originally announced September 2018.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 114, 202101 (2019)

Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: Realistic calculations with multiband $\vec{k} \cdot \vec{p}$ method

Authors: Tiago Campos, Paulo E. Faria Junior, Martin Gmitra, Guilherme M. Sipahi, Jaroslav Fabian

Abstract: A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende InSb nanowires are considered along [001], [011], and [111] directions, while wurtzite InAs nanowires are studied along [0001] and [10$\overline{1}$0] or [11$\overline{2}$0] directions. Realistic multiband $\vec{k} \cdot \vec{p}\,$ Hamiltonians are solved by… ▽ More A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende InSb nanowires are considered along [001], [011], and [111] directions, while wurtzite InAs nanowires are studied along [0001] and [10$\overline{1}$0] or [11$\overline{2}$0] directions. Realistic multiband $\vec{k} \cdot \vec{p}\,$ Hamiltonians are solved by using plane-wave expansions of real-space parameters. In all cases the linear and cubic spin-orbit coupling parameters are extracted for nanowire widths from 30 to 100 nm. Typical spin-orbit energies are on the $μみゅー$eV scale, except for InAs wurtzite nanowires grown along [10$\overline{1}$0] or [11$\overline{2}$0], in which the spin-orbit energy is about meV, largely independent of the wire diameter. Significant spin-orbit coupling is obtained by applying a transverse electric field, causing the Rashba effect. For an electric field of about 4 mV/nm the obtained spin-orbit energies are about 1 meV for both materials in all investigated growth directions. The most favorable system, in which the spin-orbit effects are maximal, are InAs WZ nanowires grown along [1010] or [11$\overline{2}$0], since here spin-orbit energies are giant (meV) already in the absence of electric field. The least favorable are InAs WZ nanowires grown along [0001], since here even the electric field does not increase the spin-orbit energies beyond 0.1 meV. The presented results should be useful for investigations of optical orientation, spin transport, weak localization, and superconducting proximity effects in semiconductor nanowires. △ Less

Submitted 30 April, 2018; v1 submitted 19 February, 2018; originally announced February 2018.

Journal ref: Phys. Rev. B 97, 245402 (2018)

Wurtzite spin lasers

Authors: Paulo E. Faria Junior, Gaofeng Xu, Yang-Fang Chen, Guilherme M. Sipahi, Igor Žutić

Abstract: Semiconductor lasers are strongly altered by adding spin-polarized carriers. Such spin lasers could overcome many limitations of their conventional (spin-unpolarized) counterparts. While the vast majority of experiments in spin lasers employed zinc-blende semiconductors, the room temperature electrical manipulation was first demonstrated in wurtzite GaN-based lasers. However, the underlying theore… ▽ More Semiconductor lasers are strongly altered by adding spin-polarized carriers. Such spin lasers could overcome many limitations of their conventional (spin-unpolarized) counterparts. While the vast majority of experiments in spin lasers employed zinc-blende semiconductors, the room temperature electrical manipulation was first demonstrated in wurtzite GaN-based lasers. However, the underlying theoretical description of wurtzite spin lasers is still missing. To address this situation, focusing on (In,Ga)N-based wurtzite quantum wells, we develop a theoretical framework in which the calculated microscopic spin-dependent gain is combined with a simple rate equation model. A small spin-orbit coupling in these wurtzites supports simultaneous spin polarizations of electrons and holes, providing unexplored opportunities to control spin lasers. For example, the gain asymmetry, as one of the key figures of merit related to spin amplification, can change the sign by simply increasing the carrier density. The lasing threshold reduction has a nonmonotonic depenedence on electron spin polarization, even for a nonvanishing hole spin polarization. △ Less

Submitted 26 January, 2017; originally announced January 2017.

Comments: 10 pages, 8 figures

Stability and accuracy control of $\mathbf{k \cdot p}$ parameters

Authors: Carlos M. O. Bastos, Fernando P. Sabino, Paulo E. Faria Junior, Tiago Campos, Juarez L. F. Da Silva, Guilherme M. Sipahi

Abstract: The $\mathbf{k \cdot p}$ method is a successful approach to obtain band structure, optical and transport properties of semiconductors, and it depends on external parameters that are obtained either from experiments, tight binding or ab initio calculations. Despite the widespread use of the $\mathbf{k \cdot p}$ method, a systematic analysis of the stability and the accuracy of its parameters is not… ▽ More The $\mathbf{k \cdot p}$ method is a successful approach to obtain band structure, optical and transport properties of semiconductors, and it depends on external parameters that are obtained either from experiments, tight binding or ab initio calculations. Despite the widespread use of the $\mathbf{k \cdot p}$ method, a systematic analysis of the stability and the accuracy of its parameters is not usual in the literature. In this work, we report a theoretical framework to determine the $\mathbf{k \cdot p}$ parameters from state-of-the-art hybrid density functional theory including spin-orbit coupling, providing a calculation where the gap and spin-orbit energy splitting are in agreement with the experimental values. The accuracy of the set of parameters is enhanced by fitting over several directions at once, minimizing the overall deviation from the original data. This strategy allows us to systematically evaluate the stability, preserving the accuracy of the parameters, providing a tool to determine optimal parameters for specific ranges around the $Γがんま$-point. To prove our concept, we investigate the zinc blende GaAs that shows results in excellent agreement with the most reliable data in the literature. △ Less

Submitted 17 August, 2016; originally announced August 2016.

Realistic multiband k.p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase

Authors: Paulo E. Faria Junior, Tiago Campos, Carlos M. O. Bastos, Martin Gmitra, Jaroslav Fabian, Guilherme M. Sipahi

Abstract: Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these wurtzite compounds, we still lack effective multiband models and parameter sets that can be simply used to investigate physical properties of such systems, for inst… ▽ More Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these wurtzite compounds, we still lack effective multiband models and parameter sets that can be simply used to investigate physical properties of such systems, for instance, under quantum confinement effects. In order to address this deficiency, in this study we calculate the ab initio band structure of bulk InAs and InP in wurtzite phase and develop an 8$\times$8 k.p Hamiltonian to describe the energy bands around $Γがんま$ point. We show that our k.p model is robust and can be fitted to describe the important features of the ab initio band structure. The correct description of the spin splitting effects that arise due to the lack of inversion symmetry in wurtzite crystals, is obtained with the $k$-dependent spin-orbit term in the Hamiltonian, often neglected in the literature. All the energy bands display a Rashba-like spin texture for the in-plane spin expectation value. We also provide the density of states and the carrier density as functions of the Fermi energy. Alternatively, we show an analytical description of the conduction band, valid close to $Γがんま$ point. The same fitting procedure is applied to the 6$\times$6 valence band Hamiltonian. However, we find that the most reliable approach is the 8$\times$8 k.p Hamiltonian for both compounds. The k.p Hamiltonians and parameter sets that we develop in this paper provide a reliable theoretical framework that can be easily applied to investigate electronic, transport, optical, and spin properties of InAs- and InP-based nanostructures. △ Less

Submitted 10 June, 2016; v1 submitted 20 April, 2016; originally announced April 2016.

Comments: 20 pages, 17 figures, 6 tables. Supplemental material included

Journal ref: Phys. Rev. B9 93, 235204 (2016)

Toward high-frequency operation of spin lasers

Authors: Paulo E. Faria Junior, Gaofeng Xu, Jeongsu Lee, Nils C. Gerhardt, Guilherme M. Sipahi, Igor Žutić

Abstract: Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum well-based laser, we study how its operation prope… ▽ More Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum well-based laser, we study how its operation properties can be modified by spin-polarized carriers, carrier density, and resonant cavity design. We reveal that by applying a uniaxial strain, it is possible to attain a large birefringence. While such birefringence is viewed as detrimental in conventional lasers, it could enable fast polarization oscillations of the emitted light in spin lasers which can be exploited for optical communication and high-performance interconnects. The resulting oscillation frequency ($>200$ GHz) would significantly exceed the frequency range possible in conventional lasers. △ Less

Submitted 25 August, 2015; v1 submitted 17 August, 2015; originally announced August 2015.

Comments: 15 pages, 14 figures

Journal ref: Phys. Rev. B 92, 075311 (2015)

Interband polarized absorption in InP polytypic superlattices

Authors: P. E. Faria Junior, T. Campos, G. M. Sipahi

Abstract: Recent advances in growth techniques have allowed the fabrication of semiconductor nanostructures with mixed wurtzite/zinc-blende crystal phases. Although the optical characterization of these polytypic structures is well eported in the literature, a deeper theoretical understanding of how crystal phase mixing and quantum confinement change the output linear light polarization is still needed. In… ▽ More Recent advances in growth techniques have allowed the fabrication of semiconductor nanostructures with mixed wurtzite/zinc-blende crystal phases. Although the optical characterization of these polytypic structures is well eported in the literature, a deeper theoretical understanding of how crystal phase mixing and quantum confinement change the output linear light polarization is still needed. In this paper, we theoretically investigate the mixing effects of wurtzite and zinc-blende phases on the interband absorption and in the degree of light polarization of an InP polytypic superlattice. We use a single 8$\times$8 k$\cdot$p Hamiltonian that describes both crystal phases. Quantum confinement is investigated by changing the size of the polytypic unit cell. We also include the optical confinement effect due to the dielectric mismatch between the superlattice and the vaccum and we show it to be necessary to match experimental results. Our calculations for large wurtzite concentrations and small quantum confinement explain the optical trends of recent photoluminescence excitation measurements. Furthermore, we find a high sensitivity to zinc-blende concentrations in the degree of linear polarization. This sensitivity can be reduced by increasing quantum confinement. In conclusion, our theoretical analysis provides an explanation for optical trends in InP polytypic superlattices, and shows that the interplay of crystal phase mixing and quantum confinement is an area worth exploring for light polarization engineering. △ Less

Submitted 21 November, 2014; v1 submitted 24 September, 2014; originally announced September 2014.

Comments: 9 pages, 6 figures and 1 table

Journal ref: Journal of Applied Physics 116, 193501 (2014)