Showing 1–29 of 29 results for author: Kaestner, B

Controlling the error mechanism in a tunable-barrier non-adiabatic charge pump by dynamic gate compensation

Authors: Frank Hohls, Vyacheslavs Kashcheyevs, Friederike Stein, Tobias Wenz, Bernd Kaestner, Hans W. Schumacher

Abstract: Single-electron pumps based on tunable-barrier quantum dots are the most promising candidates for a direct realization of the unit ampere in the recently revised SI: they are simple to operate and show high precision at high operation frequencies. The current understanding of the residual transfer errors at low temperature is based on the evaluation of backtunneling effects in the decay cascade mo… ▽ More Single-electron pumps based on tunable-barrier quantum dots are the most promising candidates for a direct realization of the unit ampere in the recently revised SI: they are simple to operate and show high precision at high operation frequencies. The current understanding of the residual transfer errors at low temperature is based on the evaluation of backtunneling effects in the decay cascade model. This model predicts a strong dependence on the ratio of the time dependent changes in the quantum dot energy and the tunneling barrier transparency. Here we employ a two-gate operation scheme to verify this prediction and to demonstrate control of the backtunneling error. We derive and experimentally verify a quantitative prediction for the error suppression, thereby confirming the basic assumptions of the backtunneling (decay cascade) model. Furthermore, we demonstrate a controlled transition from the backtunneling dominated regime into the thermal (sudden decoupling) error regime. The suppression of transfer errors by several orders of magnitude at zero magnetic field was additionally verified by a sub-ppm precision measurement. △ Less

Submitted 20 May, 2022; v1 submitted 20 December, 2021; originally announced December 2021.

Journal ref: Phys. Rev. B 105, 205425 (2022)

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs

Authors: Tomas Janda, Joao Godinho, Tomas Ostatnicky, Emanuel Pfitzner, Georg Ulrich, Arne Hoehl, Sonka Reimers, Zbynek Soban, Thomas Metzger, Helena Reichlova, Vít Novák, Richard Campion, Joachim Heberle, Peter Wadley, Kevin Edmonds, Ollie Amin, Jas Chauhan, Sarnjeet Dhesi, Francesco Maccherozzi, Ruben Otxoa, Pierre Roy, Kamil Olejnik, Petr Němec, Tomas Jungwirth, Bernd Kaestner , et al. (1 additional authors not shown)

Abstract: Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferroma… ▽ More Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Néel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Néel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism. △ Less

Submitted 11 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Materials 4, 094413 (2020)

Near-field magneto-caloritronic nanoscopy on ferromagnetic nanostructures

Authors: E. Pfitzner, X. Hu, H. W. Schumacher, A. Hoehl, D. Venkateshvaran, M. Cubukcu, J. -W. Liao, S. Auffret, J. Heberle, J. Wunderlich, B. Kaestner

Abstract: Near-field optical microscopy by means of infrared photocurrent mapping has rapidly developed in recent years. In this letter we introduce a near-field induced contrast mechanism arising when a conducting surface, exhibiting a magnetic moment, is exposed to a nanoscale heat source. The magneto-caloritronic response of the sample to near-field excitation of a localized thermal gradient leads to a c… ▽ More Near-field optical microscopy by means of infrared photocurrent mapping has rapidly developed in recent years. In this letter we introduce a near-field induced contrast mechanism arising when a conducting surface, exhibiting a magnetic moment, is exposed to a nanoscale heat source. The magneto-caloritronic response of the sample to near-field excitation of a localized thermal gradient leads to a contrast determined by the local state of magnetization. By comparing the measured electric response of a magnetic reference sample with numerical simulations we derive an estimate of the field enhancement and the corresponding temperature profile induced on the sample surface. △ Less

Submitted 31 August, 2018; originally announced August 2018.

Journal ref: AIP Advances 8, 125329 (2018)

Lissajous rocking ratchet

Authors: S. Platonov, B. Kästner, H. W. Schumacher, S. Kohler, S. Ludwig

Abstract: Breaking time-reversal symmetry (TRS) in the absence of a net bias can give rise to directed steady-state non-equilibrium transport phenomena such as ratchet effects. Here we present, theoretically and experimentally, the concept of a Lissajous rocking ratchet as an instrument based on breaking TRS. Our system is a semiconductor quantum dot (QD) with periodically modulated dot-lead tunnel barriers… ▽ More Breaking time-reversal symmetry (TRS) in the absence of a net bias can give rise to directed steady-state non-equilibrium transport phenomena such as ratchet effects. Here we present, theoretically and experimentally, the concept of a Lissajous rocking ratchet as an instrument based on breaking TRS. Our system is a semiconductor quantum dot (QD) with periodically modulated dot-lead tunnel barriers. Broken TRS gives rise to single electron tunneling current. Its direction is fully controlled by exploring frequency and phase relations between the two barrier modulations. The concept of Lissajous ratchets can be realized in a large variety of different systems, including nano-electrical, nano-electromechanical or superconducting circuits. It promises applications based on a detailed on-chip comparison of radio-frequency signals. △ Less

Submitted 13 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. Lett. 115, 106801 (2015)

Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress

Authors: Bernd Kaestner, Vyacheslavs Kashcheyevs

Abstract: Precise manipulation of individual charge carriers in nanoelectronic circuits underpins practical applications of their most basic quantum property --- the universality and invariance of the elementary charge. A charge pump generates a net current from periodic external modulation of parameters controlling a nanostructure connected to source and drain leads; in the regime of quantized pumping the… ▽ More Precise manipulation of individual charge carriers in nanoelectronic circuits underpins practical applications of their most basic quantum property --- the universality and invariance of the elementary charge. A charge pump generates a net current from periodic external modulation of parameters controlling a nanostructure connected to source and drain leads; in the regime of quantized pumping the current varies in steps of $q_e f$ as function of control parameters, where $q_e$ is the electron charge and $f$ is the frequency of modulation. In recent years, robust and accurate quantized charge pumps have been developed based on semiconductor quantum dots with tunable tunnel barriers. These devices allow modulation of charge exchange rates between the dot and the leads over many orders of magnitude and enable trapping of a precise number of electrons far away from equilibrium with the leads. The corresponding non-adiabatic pumping protocols focus on understanding of separate parts of the pumping cycle associated with charge loading, capture and release. In this report we review realizations, models and metrology applications of quantized charge pumps based on tunable-barrier quantum dots. △ Less

Submitted 29 July, 2015; v1 submitted 22 December, 2014; originally announced December 2014.

Comments: 28 pages, 21 figures, 193 references. Submitted to Rep. Prog. Phys

Journal ref: Rep. Prog. Phys. 78, 103901 (2015)

Partitioning of on-demand electron pairs

Authors: Niels Ubbelohde, Frank Hohls, Vyacheslavs Kashcheyevs, Timo Wagner, Lukas Fricke, Bernd Kästner, Klaus Pierz, Hans W. Schumacher, Rolf J. Haug

Abstract: We demonstrate the high fidelity splitting of electron pairs emitted on demand from a dynamic quantum dot by an electronic beam splitter. The fidelity of pair splitting is inferred from the coincidence of arrival in two detector paths probed by a measurement of the partitioning noise. The emission characteristic of the on-demand electron source is tunable from electrons being partitioned equally a… ▽ More We demonstrate the high fidelity splitting of electron pairs emitted on demand from a dynamic quantum dot by an electronic beam splitter. The fidelity of pair splitting is inferred from the coincidence of arrival in two detector paths probed by a measurement of the partitioning noise. The emission characteristic of the on-demand electron source is tunable from electrons being partitioned equally and independently to electron pairs being split with a fidelity of 90%. For low beam splitter transmittance we further find evidence of pair bunching violating statistical expectations for independent fermions. △ Less

Submitted 31 March, 2014; originally announced April 2014.

Journal ref: Nature Nanotechnology 10, 46-49 (2015)

A self-referenced single-electron quantized-current source

Authors: Lukas Fricke, Michael Wulf, Bernd Kaestner, Frank Hohls, Philipp Mirovsky, Brigitte Mackrodt, Ralf Dolata, Thomas Weimann, Klaus Pierz, Uwe Siegner, Hans W. Schumacher

Abstract: With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnellin… ▽ More With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnelling of electrons. However, the stochastic nature of quantum mechanical tunnelling intrinsically evokes uncontrolled deviations from the nominally quantized current. Alternatively, the counting of electrons [15, 16] has been explored but is severely limited in current amplitude and uncertainty by the low detector bandwidth. The late M. Wulf proposed [17] that this fundamental problem of electrical quantum metrology could be overcome by combining serial single-electron pumps with charge detectors allowing the generation of a quantized current and the in-situ detection of its stochastic deviations. Here, we experimentally demonstrate such quantized-current generation with in-situ detection of tunnelling errors at low frequencies and a reduction of the total current uncertainty by more than one order of magnitude. After frequency scaling this should enable a validated primary standard for the redefined SI base unit Ampere. △ Less

Submitted 19 December, 2013; originally announced December 2013.

Journal ref: Phys. Rev. Lett. 112, 226803 (2014)

Bilayer Graphene Quantum Dot Defined by Topgates

Authors: André Müller, Bernd Kaestner, Frank Hohls, Thomas Weimann, Klaus Pierz, Hans W. Schumacher

Abstract: We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature… ▽ More We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout. △ Less

Submitted 19 March, 2014; v1 submitted 29 April, 2013; originally announced April 2013.

Journal ref: Journal of Applied Physics 115, 233710 (2014)

Towards quantized current arbitrary waveform synthesis

Authors: P. Mirovsky, L. Fricke, F. Hohls, B. Kaestner, Ch. Leicht, K. Pierz, J. Melcher, H. W. Schumacher

Abstract: The generation of ac modulated quantized current waveforms using a semiconductor non-adiabatic single electron pump is demonstrated. In standard operation the single electron pump generates a quantized output current of I = ef where e is the charge of the electron and f is the pumping frequency. Suitable frequency modulation of f allows the generation of ac modulated output currents with different… ▽ More The generation of ac modulated quantized current waveforms using a semiconductor non-adiabatic single electron pump is demonstrated. In standard operation the single electron pump generates a quantized output current of I = ef where e is the charge of the electron and f is the pumping frequency. Suitable frequency modulation of f allows the generation of ac modulated output currents with different characteristics. By sinusoidal and saw tooth like modulation of f accordingly modulated quantized current waveforms with kHzきろへるつ modulation frequencies and peak currents up to 100 pA are obtained. Such ac quantized current sources could find applications ranging from precision ac metrology to on-chip signal generation. △ Less

Submitted 22 March, 2013; originally announced March 2013.

Comments: 10 pages + 3 figures

Journal ref: J. Appl. Phys. 113, 213704 (2013)

Counting statistics for electron capture in a dynamic quantum dot

Authors: Lukas Fricke, Michael Wulf, Bernd Kaestner, Vyacheslavs Kashcheyevs, Janis Timoshenko, Pavel Nazarov, Frank Hohls, Philipp Mirovsky, Brigitte Mackrodt, Ralf Dolata, Thomas Weimann, Klaus Pierz, Hans W. Schumacher

Abstract: We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an a… ▽ More We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an adiabatically evolving grand canonical distribution, the other one is an athermal limit equivalent to the solution of a generalized decay cascade model. We identify the athermal capturing mechanism in our sample, testifying to the high precision of our combined theoretical and experimental methods. The distinction between the capturing mechanisms allows to derive efficient experimental strategies for improving the initialization. △ Less

Submitted 8 November, 2012; originally announced November 2012.

Comments: 7 pages, 8 figures, including supplementary material in the appendix

Journal ref: Phys. Rev. Lett. 110, 126803 (2013)

A quantized current source with mesoscopic feedback

Authors: Lukas Fricke, Frank Hohls, Niels Ubbelohde, Bernd Kaestner, Vyacheslavs Kashcheyevs, Christoph Leicht, Philipp Mirovsky, Klaus Pierz, Hans W. Schumacher, Rolf J. Haug

Abstract: We study a mesoscopic circuit of two quantized current sources, realized by non-adiabatic single- electron pumps connected in series with a small micron-sized island in between. We find that quantum transport through the second pump can be locked onto the quantized current of the first one by a feedback due to charging of the mesoscopic island. This is confirmed by a measurement of the charge vari… ▽ More We study a mesoscopic circuit of two quantized current sources, realized by non-adiabatic single- electron pumps connected in series with a small micron-sized island in between. We find that quantum transport through the second pump can be locked onto the quantized current of the first one by a feedback due to charging of the mesoscopic island. This is confirmed by a measurement of the charge variation on the island using a nearby charge detector. Finally, the charge feedback signal clearly evidences loading into excited states of the dynamic quantum dot during single-electron pump operation. △ Less

Submitted 27 May, 2011; originally announced May 2011.

Journal ref: Phys. Rev. B 83, 193306 (2011)

Integrated quantized electronics: a semiconductor quantized voltage source

Authors: Frank Hohls, Armin C. Welker, Christoph Leicht, Lukas Fricke, Bernd Kaestner, Philipp Mirovsky, André Müller, Klaus Pierz, Uwe Siegner, Hans Werner Schumacher

Abstract: The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in electrical quantum metrology. Also semiconductors are routinely applied in electrical quantum metrology making use of the quantum Hall effect. However, despite their br… ▽ More The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in electrical quantum metrology. Also semiconductors are routinely applied in electrical quantum metrology making use of the quantum Hall effect. However, despite their broad range of further applications e.g. in integrated circuits, quantized voltage generation by a semiconductor device has never been obtained. Here we report a semiconductor quantized voltage source generating quantized voltages Vout = f\cdot(h/e). It is based on an integrated quantized circuit of a single electron pump operated at pumping frequency f and a quantum Hall device monolithically integrated in series. The output voltages of several \muV are expected to be scalable by orders of magnitude using present technology. The device might open a new route towards the closure of the quantum metrological triangle. Furthermore it represents a universal electrical quantum reference allowing to generate quantized values of the three most relevant electrical units of voltage, current, and resistance based on fundamental constants using a single device. △ Less

Submitted 9 March, 2011; originally announced March 2011.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. Lett. 109, 056802 (2012)

Synchronized single electron emission from dynamical quantum dots

Authors: P. Mirovsky, B. Kaestner, C. Leicht, A. C. Welker, T. Weimann, K. Pierz, H. W. Schumacher

Abstract: We study synchronized quantized charge pumping through several dynamical quantum dots (QDs) driven by a single time modulated gate signal. We show that the main obstacle for synchronization being the lack of uniformity can be overcome by operating the QDs in the decay cascade regime. We discuss the mechanism responsible for lifting the stringent uniformity requirements. This enhanced functionality… ▽ More We study synchronized quantized charge pumping through several dynamical quantum dots (QDs) driven by a single time modulated gate signal. We show that the main obstacle for synchronization being the lack of uniformity can be overcome by operating the QDs in the decay cascade regime. We discuss the mechanism responsible for lifting the stringent uniformity requirements. This enhanced functionality of dynamical QDs might find applications in nanoelectronics and quantum metrology. △ Less

Submitted 14 December, 2010; v1 submitted 11 November, 2010; originally announced November 2010.

Comments: 4 pages, 3 figures, submitted to APL

Journal ref: Appl. Phys. Lett. 97, 252104 (2010)

Generation of energy selective excitations in quantum Hall edge states

Authors: C. Leicht, P. Mirovsky, B. Kaestner, F. Hohls, V. Kashcheyevs, E. V. Kurganova, U. Zeitler, T. Weimann, K. Pierz, H. W. Schumacher

Abstract: We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.… ▽ More We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states. △ Less

Submitted 29 September, 2010; originally announced September 2010.

Journal ref: Semicond. Sci. Technol. 26, 055010 (2011)

Constructive role of non-adiabaticity for quantized charge pumping

Authors: B. Kaestner, C. Leicht, P. Mirovsky, V. Kashcheyevs, E. V. Kurganova, U. Zeitler, K. Pierz, H. W. Schumacher

Abstract: We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to realize single-parameter pumping, while in previous multi-parameter pumping schemes it caused unwanted and less controllable currents. In this paper… ▽ More We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to realize single-parameter pumping, while in previous multi-parameter pumping schemes it caused unwanted and less controllable currents. In this paper we demonstrate experimentally the constructive and destructive role of non-adiabaticity by analysing the pumping current over a broad frequency range. △ Less

Submitted 13 July, 2010; originally announced July 2010.

Comments: Presented at ICPS 2010, July 25 - 30, Seoul, Korea

Journal ref: AIP Conf. Proc. 1399, 345 (2010)

Non-adiabatic pumping of single electrons affected by magnetic fields

Authors: Christoph Leicht, Bernd Kaestner, Vyacheslavs Kashcheyevs, Philipp Mirovsky, Thomas Weimann, Klaus Pierz, Hans-Werner Schumacher

Abstract: Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pump… ▽ More Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pumping one single electron is traced back to the diverse tunneling processes into and out-of the dot. Extending the theory to multiple electrons allows to investigate conveniently the pumping characteristics in an applied magnetic field. In this way, a qualitatively different behavior between pumping even or odd numbers of electrons is extracted. △ Less

Submitted 15 September, 2009; originally announced September 2009.

Comments: This article has been submitted to Physica E

Journal ref: Physica E 42, 911 (2010)

Universal decay cascade model for dynamic quantum dot initialization

Authors: Vyacheslavs Kashcheyevs, Bernd Kaestner

Abstract: Dynamic quantum dots can be formed by time-dependent electrostatic potentials in nanoelectronic devices, such as gate- or surface-acoustic-wave-driven electron pumps. Ability to control the number of captured electrons with high precision is required for applications in fundamental metrology and quantum information processing. In this work we propose and quantify a scheme to initialize quantum d… ▽ More Dynamic quantum dots can be formed by time-dependent electrostatic potentials in nanoelectronic devices, such as gate- or surface-acoustic-wave-driven electron pumps. Ability to control the number of captured electrons with high precision is required for applications in fundamental metrology and quantum information processing. In this work we propose and quantify a scheme to initialize quantum dots with a controllable number of electrons. It is based on the stochastic decrease in the electron number of a shrinking dynamic quantum dot and is described by a nuclear decay cascade model with "isotopes" being different charge states of the dot. Unlike the natural nuclei, the artificial confinement is time-dependent and tunable, so the probability distribution for the final "stable isotopes" depends on the external gate voltage. We derive an explicit fitting formula to extract the sequence of decay rate ratios from the measurements of averaged current in a periodically driven device. This provides a device-specific fingerprint which allows to compare different devices and architectures, and predict the upper limits of initialization accuracy from low precision measurements. △ Less

Submitted 22 February, 2010; v1 submitted 26 January, 2009; originally announced January 2009.

Comments: 4 pages; more general derivation, new figure one

Journal ref: Phys. Rev. Lett. 104, 186805 (2010)

Spin-injection Hall effect in a planar photovoltaic cell

Authors: J. Wunderlich, A. C. Irvine, Jairo Sinova, B. G. Park, X. L. Xu, B. Kaestner, V. Novak, T. Jungwirth

Abstract: Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum… ▽ More Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum-relativistic nature of spin-charge transport and which meets all these key requirements on the spin detection. The two-dimensional electron-hole gas photo-voltaic cell we designed to observe the SIHE allows us to develop a quantitative microscopic theory of the phenomenon and to demonstrate its direct application in optoelectronics. We report an experimental realization of a non-magnetic spin-photovoltaic effect via the SIHE, rendering our device an electrical polarimeter which directly converts the degree of circular polarization of light to a voltage signal. △ Less

Submitted 21 November, 2008; originally announced November 2008.

Comments: 14 pages, 4 figures

Single-parameter quantized charge pumping in high magnetic fields

Authors: B. Kaestner, Ch. Leicht, V. Kashcheyevs, K. Pierz, U. Siegner, H. W. Schumacher

Abstract: We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a… ▽ More We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected. △ Less

Submitted 7 November, 2008; originally announced November 2008.

Comments: This article has been submitted to Applied Physics Letters

Journal ref: Appl. Phys. Lett. 94, 012106 (2009)

Robust single-parameter quantized charge pumping

Authors: B. Kaestner, V. Kashcheyevs, G. Hein, K. Pierz, U. Siegner, H. W. Schumacher

Abstract: This paper investigates a scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the driving signal, which increases with applied rf power. This feature together with its simple configuration makes this device a potential module for a scalable… ▽ More This paper investigates a scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the driving signal, which increases with applied rf power. This feature together with its simple configuration makes this device a potential module for a scalable source of quantized current. △ Less

Submitted 6 March, 2008; originally announced March 2008.

Comments: Submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 92, 192106 (2008)

Theoretical and experimental investigations of Coulomb blockade in coupled quantum dot systems

Authors: F. J. Kaiser, S. Kohler, P. Hänggi, M. Malecha, J. Ebbecke, A. Wixforth, H. W. Schumacher, B. Kästner, D. Reuter, A. D. Wieck

Abstract: Two strongly coupled quantum dots are theoretically and experimentally investigated. In the conductance measurements of a GaAs based low-dimensional system additional features to the Coulomb blockade have been detected at low temperatures. These regions of finite conductivity are compared with theoretical investigations of a strongly coupled quantum dot system and good agreement of the theoretic… ▽ More Two strongly coupled quantum dots are theoretically and experimentally investigated. In the conductance measurements of a GaAs based low-dimensional system additional features to the Coulomb blockade have been detected at low temperatures. These regions of finite conductivity are compared with theoretical investigations of a strongly coupled quantum dot system and good agreement of the theoretical and the experimental results has been found. △ Less

Submitted 20 February, 2008; originally announced February 2008.

Comments: 12 pages, 6 figures

Journal ref: J. Phys.: Condens. Matter 20, 374108 (2008)

Single-parameter non-adiabatic quantized charge pumping

Authors: B. Kaestner, V. Kashcheyevs, S. Amakawa, L. Li, M. D. Blumenthal, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher

Abstract: Controlled charge pumping in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that no… ▽ More Controlled charge pumping in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that non-adiabatic blockade of unwanted tunnel events can obliterate the requirement of having at least two phase-shifted periodic signals to realize quantized pumping. The simple configuration without multiple pumping signals might find wide application in metrological experiments and quantum electronics. △ Less

Submitted 6 July, 2007; originally announced July 2007.

Comments: 4 pages, 4 figures

Journal ref: Physical Review B 77, 153301 (2008)

Low-dimensional light-emitting transistor with tunable recombination zone

Authors: B. Kaestner, J. Wunderlich, T. J. B. M. Janssen

Abstract: We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and holes can be directed to the same area by drain and gate voltages, defining a recombin… ▽ More We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and holes can be directed to the same area by drain and gate voltages, defining a recombination zone tunable in size and position. It could therefore provide an architecture for probing low-dimensional devices by analysing the emitted light of the recombination zone. △ Less

Submitted 17 August, 2006; originally announced August 2006.

Comments: 12 Pages, to be published in Journal of Modern Optics

Journal ref: Journal of Modern Optics 54, 431 (2007)

Coulomb blockade anisotropic magnetoresistance: Singleelectronics meets spintronics

Authors: J. Wunderlich, T. Jungwirth, B. Kaestner, A. C. Irvine, K. Wang, N. Stone, U. Rana, A. D. Giddings, A. B. Shick, C. T. Foxon, R. P. Campion, D. A. Williams, B. L Gallagher

Abstract: Single-electronics and spintronics are among the most intensively investigated potential complements or alternatives to CMOS electronics. Single-electronics, which is based on the discrete charge of the electron, is the ultimate in miniaturization and electro-sensitivity. Spintronics, which is based on manipulating electron spins,delivers high magneto-sensitivity and non-volatile memory effects.… ▽ More Single-electronics and spintronics are among the most intensively investigated potential complements or alternatives to CMOS electronics. Single-electronics, which is based on the discrete charge of the electron, is the ultimate in miniaturization and electro-sensitivity. Spintronics, which is based on manipulating electron spins,delivers high magneto-sensitivity and non-volatile memory effects. So far, major developments in the two fields have followed independent paths with only a few experimental studies of hybrid single-electronic/spintronic devices. Intriguing new effects have been discovered in such devices but these have not, until now, offered the possibility of useful new functionalities. Here we demonstrate a device which shows a new physical effect, Coulomb blockade anisotropic magnetoresistance, and which offers a route to non-volatile, low-field, and highly electro- and magneto-sensitive operation. Since this new phenomenon reflects the magnetization orientation dependence of the classical single-electron charging energy it does not impose constraints on the operational temperature associated with more subtle quantum effects, such as resonant or spin-coherent tunneling. △ Less

Submitted 26 February, 2006; originally announced February 2006.

Edge spin accumulation in semiconductor two-dimensional hole gases

Authors: K. Nomura, J. Wunderlich, Jairo Sinova, B. Kaestner, A. H. MacDonald, T. Jungwirth

Abstract: The controlled generation of localized spin densities is a key enabler of semiconductor spintronics In this work, we study spin Hall effect induced edge spin accumulation in a two-dimensional hole gas with strong spin orbit interactions. We argue that it is an intrinsic property, in the sense that it is independent of the strength of disorder scattering. We show numerically that the spin polariz… ▽ More The controlled generation of localized spin densities is a key enabler of semiconductor spintronics In this work, we study spin Hall effect induced edge spin accumulation in a two-dimensional hole gas with strong spin orbit interactions. We argue that it is an intrinsic property, in the sense that it is independent of the strength of disorder scattering. We show numerically that the spin polarization near the edge induced by this mechanism can be large, and that it becomes larger and more strongly localized as the spin-orbit coupling strength increases, and is independent of the width of the conducting strip once this exceeds the elastic scattering mean-free-path. Our experiments in two-dimensional hole gas microdevices confirm this remarkable spin Hall effect phenomenology. Achieving comparable levels of spin polarization by external magnetic fields would require laboratory equipment whose physical dimensions and operating electrical currents are million times larger than those of our spin Hall effect devices. △ Less

Submitted 12 September, 2005; v1 submitted 22 August, 2005; originally announced August 2005.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 72, 245330 (2005)

Co-planar spin-polarized light emitting diode

Authors: B. Kaestner, J. Wunderlich, Jairo Sinova, T. Jungwirth

Abstract: Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor heterostructures has been used for a reliable spin detection. In semiconductors with strong spin-orbit interaction, the sensitivity of vertical devices may be insufficient… ▽ More Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor heterostructures has been used for a reliable spin detection. In semiconductors with strong spin-orbit interaction, the sensitivity of vertical devices may be insufficient, however, because of the sepration of the spin aligner part and the spin detection region by one or more heterointerfaces and becuse of the short spin coherence length. Here we demostrate that higly sensitive spin detection can be achieved using a lateral arrangement of the spin polarized and optically active regions. Using our co-planar spin-polarized light emitting diodes we detect electrical field induced spin generation in a semiconductor heterojunction two-dimensional hole gas. The polarization results from spin asymmetric recombination of injected electrons with strongly SO coupled two-dimensional holes. The possibility to detect magnetized Co particles deposited on the co-planar diode structure is also demonstrated. △ Less

Submitted 6 July, 2005; originally announced July 2005.

Comments: 8 pages, 3 figures

Journal ref: Appl. Phys. Lett. 88, 091106 (2006)

Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems

Authors: B. Kaestner, D. G. Hasko, D. A. Williams

Abstract: A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems. A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems. △ Less

Submitted 5 November, 2004; originally announced November 2004.

Comments: Extract from PhD dissertation, 18 pages, 9 figures

Journal ref: B. Kaestner, "Planar-Geometry Light Emitting Diode: Optical Approach for Spin Detection in Low-Dimensional Systems", Dissertation published for the University of Cambridge, 2003

Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system

Authors: Joerg Wunderlich, Bernd Kaestner, Jairo Sinova, Tomas Jungwirth

Abstract: We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed co-planar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the Rashba split h… ▽ More We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed co-planar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the Rashba split heavy hole states lie in the plane of the 2D layer. When an electric field is applied across the hole channel a non zero out-of-plane component of the angular momentum is detected whose sign depends on the sign of the electric field and is opposite for the two edges. Microscopic quantum transport calculations show only a weak effect of disorder suggesting that the clean limit spin-Hall conductance description (intrinsic spin-Hall effect) might apply to our system. △ Less

Submitted 31 December, 2004; v1 submitted 12 October, 2004; originally announced October 2004.

Comments: 4 pages, 3 figures, paper based on work presented at the Gordon Research Conference on Magnetic Nano-structures (August 2004) and Oxford Kobe Seminar on Spintronics (September 2004); accepted for publication in Physical Review Letters December 2004

Journal ref: Phys. Rev. Lett. 94, 047204 (2005).

Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope

Authors: B. Kaestner, C. Rodenburg, C. J. Humphreys

Abstract: Semiconductor dopant profiling using secondary electron imaging in a scanning electron microscope (SEM) has been developed in recent years. In this paper, we show that the mechanism behind it also allows mapping of the electric potential of undoped regions. By using an unbiased GaAs/AlGaAs heterostructure, this article demonstrates the direct observation of the electrostatic potential variation… ▽ More Semiconductor dopant profiling using secondary electron imaging in a scanning electron microscope (SEM) has been developed in recent years. In this paper, we show that the mechanism behind it also allows mapping of the electric potential of undoped regions. By using an unbiased GaAs/AlGaAs heterostructure, this article demonstrates the direct observation of the electrostatic potential variation inside a 90nm wide undoped GaAs channel surrounded by ionized dopants. The secondary electron emission intensities are compared with two-dimensional numerical solutions of the electric potential. △ Less

Submitted 6 August, 2004; originally announced August 2004.

Comments: 7 pages, 3 figures

Journal ref: Appl. Phys. Lett. Vol 84, pp. 2109-2111, 2004