Showing 1–9 of 9 results for author: Kappers, M

Fabrication and transfer print based integration of free-standing GaN membrane micro-lenses onto semiconductor chips

Authors: Nils Kolja Wessling, Saptarsi Ghosh, Benoit Guilhabert, Menno Kappers, Miles Toon, Rachel A. Oliver, Martin D. Dawson, Michael J. Strain

Abstract: We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex lens platelets from 6" Si growth wafers and show their subsequent transfer-printing integration. A growth process targeted at producing unbowed epitaxial wafers w… ▽ More We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex lens platelets from 6" Si growth wafers and show their subsequent transfer-printing integration. A growth process targeted at producing unbowed epitaxial wafers was combined with optimisation of the etching volume in order to produce flat devices for printing. Lens structures were fabricated with 6 to 11 $μみゅー$m diameter, 2 $μみゅー$m height and root-mean-squared surface roughness below 2 nm. The lenses were printed in a vertically coupled geometry on a single crystalline diamond substrate and with $μみゅー$m-precise placement on a horizontally coupled photonic integrated circuit waveguide facet. Optical performance analysis shows that these lenses could be used to couple to diamond nitrogen vacancy centres at micron scale depths and demonstrates their potential for visible to infrared light-coupling applications. △ Less

Submitted 19 September, 2022; v1 submitted 10 August, 2022; originally announced August 2022.

Comments: 16 pages, 14 figures

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem

Authors: Daniel S. P. Tanner, Philip Dawson, Menno J. Kappers, Rachel A. Oliver, Stefan Schulz

Abstract: We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier localization effects to the green gap problem. Studying the localization length and electron-hole overlaps at low and elevated temperatures, we find alloy-induced… ▽ More We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier localization effects to the green gap problem. Studying the localization length and electron-hole overlaps at low and elevated temperatures, we find alloy-induced localization effects are crucial for the accurate description of InGaN quantum wells across the range of In content studied. However, our calculations show very little change in the localization effects when moving from the blue to the green spectral regime; i.e. when the internal quantum efficiency and wall plug efficiencies reduce sharply, for instance, the in-plane carrier separation due to alloy induced localization effects change weakly. We conclude that other effects, such as increased defect densities, are more likely to be the main reason for the green gap problem. This conclusion is further supported by our finding that the electron localization length is large, when compared to that of the holes, and changes little in the In composition range of interest for the green gap problem. Thus electrons may become increasingly susceptible to an increased (point) defect density in green emitters and as a consequence the nonradiative recombination rate may increase. △ Less

Submitted 25 January, 2020; originally announced January 2020.

Comments: 17 pages, 9 figures

Journal ref: Phys. Rev. Applied 13, 044068 (2020)

Surface zeta potential and diamond seeding on gallium nitride films

Authors: Soumen Mandal, Evan L. H. Thomas, Callum Middleton, Laia Gines, James Griffiths, Menno Kappers, Rachel Oliver, David J. Wallis, Lucy E. Goff, Stephen A. Lynch, Martin Kuball, Oliver A. Williams

Abstract: Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows higher negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 wil… ▽ More Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows higher negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self assembly of a monolayer of diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN. △ Less

Submitted 9 October, 2017; v1 submitted 17 July, 2017; originally announced July 2017.

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

Authors: D. Kundys, D. Sutherland, M. Davies, F. Oehler, J. Griffiths, P. Dawson, M. J. Kappers, C. J. Humphreys, S. Schulz, F. Tang, R. A. Oliver

Abstract: In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are ver… ▽ More In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are very broad with full width at half-maximum height increasing from 81 to 330 meV as the In fraction increases. Comparative photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At a temperature of 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-band states to lie in the range of 23-54 meV for both a-and m-plane samples in which we could observe distinct exciton features in the polarised photoluminescence excitation spectroscopy. Thus, the thermal occupation of a higher valence subband cannot be responsible for the reduction of the degree of linear polarisation. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which at least partly responsible for the reduction in the degree of linear polarisation. △ Less

Submitted 11 November, 2016; originally announced December 2016.

Comments: 9 pages 7 figures

Journal ref: Science and Technology of Advanced Materials, 17, (2016)

Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Authors: S. Schulz, D. P. Tanner, E. P. O'Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, P. Dawson

Abstract: In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photo… ▽ More In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems. △ Less

Submitted 1 December, 2015; v1 submitted 23 September, 2015; originally announced September 2015.

Comments: 13 pages, 12 figures

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Authors: Tongtong Zhu, Fabrice Oehler, Benjamin P. L. Reid, Robert M. Emery, Robert A. Taylor, Menno J. Kappers, Rachel A. Oliver

Abstract: We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth o… ▽ More We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields. △ Less

Submitted 24 May, 2013; originally announced May 2013.

Comments: 4 figures, submitted

Journal ref: Appl. Phys. Lett. 102, 251905 (2013)

Low threshold, room-temperature microdisk lasers in the blue spectral range

Authors: Igor Aharonovich, Alexander Woolf, Kasey J. Russell, Tongtong Zhu, Menno J. Kappers, Rachel A. Oliver, Evelyn L. Hu

Abstract: InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs… ▽ More InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity. △ Less

Submitted 31 August, 2012; originally announced August 2012.

Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities

Authors: Igor Aharonovich, Nan Niu, Fabian Rol, Kasey J Russell, Alexander Woolf, Haitham A. R. El-Ella, Menno J. Kappers, Rachel A Oliver, Evelyn L. Hu

Abstract: Controlled tuning of the whispering gallery modes of GaN/InGaN μみゅー-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the μみゅー-disks in water and irradiating with ultraviolet (UV) laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (~ several μみゅーW). T… ▽ More Controlled tuning of the whispering gallery modes of GaN/InGaN μみゅー-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the μみゅー-disks in water and irradiating with ultraviolet (UV) laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (~ several μみゅーW). The selective oxidation mechanism is proposed to explain the results and supported by theoretical analysis. The tuning of WGMs in GaN/InGaN μみゅー-disk cavities may have important implication in cavity quantum electrodynamics and the development of efficient light emitting devices. △ Less

Submitted 23 August, 2011; originally announced August 2011.

Carrier localization mechanisms in InGaN/GaN quantum wells

Authors: D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, C. J. Humphreys

Abstract: Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the con… ▽ More Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the contribution to the potential energy of the carriers from band gap fluctuations, the deformation potential and the spontaneous and piezoelectric fields. We have considered the effect of well width fluctuations and found that these contribute to electron localization, but not to hole localization. We also simulate low temperature photoluminescence spectra and find good agreement with experiment. △ Less

Submitted 7 June, 2010; originally announced June 2010.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. B 83, 115321 (2011)