Showing 1–10 of 10 results for author: Kiemle, J

Exciton-phonon-scattering: A competition between bosonic and fermionic nature of bound electron-hole pairs

Authors: Manuel Katzer, Malte Selig, Lukas Sigl, Mirco Troue, Johannes Figueiredo, Jonas Kiemle, Florian Sigger, Ursula Wurstbauer, Alexander W. Holleitner, Andreas Knorr

Abstract: The question of macroscopic occupation and spontaneous emergence of coherence for exciton ensembles has gained renewed attention due to the rise of van der Waals heterostructures made of atomically thin semiconductors. The hosted interlayer excitons exhibit nanosecond lifetimes, long enough to allow for excitonic thermalization in time. Several experimental studies reported signatures of macroscop… ▽ More The question of macroscopic occupation and spontaneous emergence of coherence for exciton ensembles has gained renewed attention due to the rise of van der Waals heterostructures made of atomically thin semiconductors. The hosted interlayer excitons exhibit nanosecond lifetimes, long enough to allow for excitonic thermalization in time. Several experimental studies reported signatures of macroscopic occupation effects at elevated exciton densities. With respect to theory, excitons are composite particles formed by fermionic constituents, and a general theoretical argument for a bosonic thermalization of an exciton gas beyond the linear regime is still missing. Here, we derive an equation for the phonon mediated thermalization at densities above the classical limit, and identify which conditions favor the thermalization of fermionic or bosonic character, respectively. In cases where acoustic, quasielastic phonon scattering dominates the dynamics, our theory suggests that transition metal dichalcogenide (TMDC) excitons might be bosonic enough to show bosonic thermalization behaviour and decreasing dephasing for increasing exciton densities. This can be interpreted as a signature of an emerging coherence in the exciton ground state, and agrees well with the experimentally observed features, such as a decreasing linewidth for increasing densities. △ Less

Submitted 21 March, 2023; originally announced March 2023.

Ultra-Sensitive Extinction Measurements of Optically Active Defects in Monolayer MoS$_2$

Authors: Florian Sigger, Ines Amersdorffer, Alexander Hötger, Manuel Nutz, Jonas Kiemle, Takashi Taniguchi, Kenji Watanabe, Michael Förg, Jonathan Noe, Jonathan J. Finley, Alexander Högele, Alexander W. Holleitner, Thomas Hümmer, David Hunger, Christoph Kastl

Abstract: We utilize cavity-enhanced extinction spectroscopy to directly quantify the optical absorption of defects in MoS$_2$ generated by helium ion bombardment. We achieve hyperspectral imaging of specific defect patterns with a detection limit below 0.01% extinction, corresponding to a detectable defect density below $10^{11}$ cm$^{-2}$. The corresponding spectra reveal a broad sub-gap absorption, being… ▽ More We utilize cavity-enhanced extinction spectroscopy to directly quantify the optical absorption of defects in MoS$_2$ generated by helium ion bombardment. We achieve hyperspectral imaging of specific defect patterns with a detection limit below 0.01% extinction, corresponding to a detectable defect density below $10^{11}$ cm$^{-2}$. The corresponding spectra reveal a broad sub-gap absorption, being consistent with theoretical predictions related to sulfur vacancy-bound excitons in MoS$_2$. Our results highlight cavity-enhanced extinction spectroscopy as efficient means for the detection of optical transitions in nanoscale thin films with weak absorption, applicable to a broad range of materials. △ Less

Submitted 20 December, 2022; originally announced December 2022.

Comments: 17 pages main manuscript, 7 pages supporting information

Journal ref: J. Phys. Chem. Lett. 2022, 13, 44, 10291-10296

Optical dipole orientation of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks

Authors: Lukas Sigl, Mirco Troue, Manuel Katzer, Malte Selig, Florian Sigger, Jonas Kiemle, Mauro Brotons-Gisbert, Kenji Watanabe, Takashi Taniguchi, Brian D. Gerardot, Andreas Knorr, Ursula Wurstbauer, Alexander W. Holleitner

Abstract: We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out… ▽ More We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out-of-plane transition dipole moments associated to the interlayer exciton photon emission. We determine the transition dipole moments for all observed interlayer exciton transitions to be (99 $\pm$ 1)% in-plane for R- and H-type stacking, independent of the excitation power and therefore the density of the exciton ensemble in the experimentally examined range. Finally, we discuss the limitations of the presented measurement technique to observe correlation effects in exciton ensembles. △ Less

Submitted 2 November, 2021; originally announced November 2021.

Berry curvature-induced local spin polarisation in gated graphene/WTe$_2$ heterostructures

Authors: Lukas Powalla, Jonas Kiemle, Elio J. König, Andreas P. Schnyder, Johannes Knolle, Klaus Kern, Alexander Holleitner, Christoph Kastl, Marko Burghard

Abstract: Full experimental control of local spin-charge interconversion is of primary interest for spintronics. Heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have provided so far global information on such devices, while leaving the local interplay between symmetry breaking, charge fl… ▽ More Full experimental control of local spin-charge interconversion is of primary interest for spintronics. Heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have provided so far global information on such devices, while leaving the local interplay between symmetry breaking, charge flow across the heterointerface and aspects of topology unexplored. Here, we utilize magneto-optical Kerr microscopy to resolve the gate-tunable, local current-induced spin polarisation in graphene/WTe$_2$ van der Waals (vdW) heterostructures. It turns out that even for a nominal in-plane transport, substantial out-of-plane spin accumulation is induced by a corresponding out-of-plane current flow. We develop a theoretical model which explains the gate- and bias-dependent onset and spatial distribution of the massive Kerr signal on the basis of interlayer tunnelling, along with the reduced point group symmetry and inherent Berry curvature of the heterostructure. Our findings unravel the potential of 2D heterostructure engineering for harnessing topological phenomena for spintronics, and constitute an important further step toward electrical spin control on the nanoscale. △ Less

Submitted 29 June, 2021; originally announced June 2021.

Comments: 6 pages, 4 figures

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Authors: Shruti Subramanian, Quinn T. Campbell, Simon Moser, Jonas Kiemle, Philipp Zimmermann, Paul Seifert, Florian Sigger, Deeksha Sharma, Hala Al-Sadeg, Michael Labella III, Dacen Waters, Randall M. Feenstra, Roland J. Koch, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Ismaila Dabo, Alexander Holleitner, Thomas E. Beechem, Ursula Wurstbauer, Joshua A. Robinson

Abstract: Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x large… ▽ More Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas. △ Less

Submitted 25 June, 2020; originally announced June 2020.

Condensation signatures of photogenerated interlayer excitons in a van der Waals heterostack

Authors: Lukas Sigl, Florian Sigger, Fabian Kronowetter, Jonas Kiemle, Julian Klein, Kenji Watanabe, Takashi Taniguchi, Jonathan J. Finley, Ursula Wurstbauer, Alexander W. Holleitner

Abstract: Atomistic van der Waals heterostacks are ideal systems for high-temperature exciton condensation because of large exciton binding energies and long lifetimes. Charge transport and electron energy-loss spectroscopy showed first evidence of excitonic many-body states in such two-dimensional materials. Pure optical studies, the most obvious way to access the phase diagram of photogenerated excitons h… ▽ More Atomistic van der Waals heterostacks are ideal systems for high-temperature exciton condensation because of large exciton binding energies and long lifetimes. Charge transport and electron energy-loss spectroscopy showed first evidence of excitonic many-body states in such two-dimensional materials. Pure optical studies, the most obvious way to access the phase diagram of photogenerated excitons have been elusive. We observe several criticalities in photogenerated exciton ensembles hosted in MoSe2-WSe2 heterostacks with respect to photoluminescence intensity, linewidth, and temporal coherence pointing towards the transition to a coherent quantum state. For this state, the occupation is 100 percent and the exciton diffusion length is increased. The phenomena survive above 10 kelvin, consistent with the predicted critical condensation temperature. Our study provides a first phase-diagram of many-body interlayer exciton states including Bose Einstein condensation. △ Less

Submitted 21 January, 2020; originally announced January 2020.

Comments: 26 pages, 16 figures

Journal ref: Phys. Rev. Research 2, 042044 (2020)

Control of the orbital character of indirect excitons in MoS2/WS2 heterobilayers

Authors: Jonas Kiemle, Florian Sigger, Michael Lorke, Bastian Miller, Kenji Watanabe, Takashi Taniguchi, Alexander Holleitner, Ursula Wurstbauer

Abstract: Valley selective hybridization and residual coupling of electronic states in commensurate van der Waals heterobilayers enable the control of the orbital character of interlayer excitons. We demonstrate electric field control of layer index, orbital character, lifetime and emission energy of indirect excitons in MoS2/WS2 heterobilayers embedded in an vdW field effect structure. Different excitonic… ▽ More Valley selective hybridization and residual coupling of electronic states in commensurate van der Waals heterobilayers enable the control of the orbital character of interlayer excitons. We demonstrate electric field control of layer index, orbital character, lifetime and emission energy of indirect excitons in MoS2/WS2 heterobilayers embedded in an vdW field effect structure. Different excitonic dipoles normal to the layers are found to stem from bound electrons and holes located in different valleys of MoS2/WS2 with a valley selective degree of hybridization. For the energetically lowest emission lines, coupling of electronic states causes a field-dependent level anticrossing that goes along with a change of the IX lifetime from 400 ns to 100 ns. In the hybridized regime the exiton is delocalized between the two constituent layers, whereas for large positive or negative electric fields, the layer index of the bound hole is field-dependent. Our results demonstrate the design of novel van der Waals solids with the possibility to in-situ control their physical properties via external stimuli such as electric fields. △ Less

Submitted 5 December, 2019; originally announced December 2019.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 101, 121404 (2020)

Impact of intrinsic and extrinsic imperfections on the electronic and optical properties of MoS2

Authors: J. Klein, A. Kerelsky, M. Lorke, M. Florian, F. Sigger, J. Kiemle, M. C. Reuter, T. Taniguchi, K. Watanabe, J. J. Finley, A. Pasupathy, A. W. Holleitner, F. M. Ross, U. Wurstbauer

Abstract: Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are determined by strong Coulomb interaction. Here, we examine the role of the substrate material and intrinsic defects in monolayer MoS2 crystals on SiO2 and hBN substr… ▽ More Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are determined by strong Coulomb interaction. Here, we examine the role of the substrate material and intrinsic defects in monolayer MoS2 crystals on SiO2 and hBN substrates using a combination of scanning tunneling spectroscopy, scanning tunneling microscopy, optical absorbance, and low-temperature photoluminescence measurements. We find that the different substrates significantly impact the optical properties and the local density of states near the conduction band edge observed in tunneling spectra. While the SiO2 substrates induce a large background doping with electrons and a substantial amount of band tail states near the conduction band edge of MoS2, such states as well as the high doping density are absent using high quality hBN substrates. By accounting for the substrate effects we obtain a quasiparticle gap that is in excellent agreement with optical absorbance spectra and we deduce an exciton binding energy of about 480 meV. We identify several intrinsic lattice defects that are ubiquitious in MoS2, but we find that on hBN substrates the impact of these defects appears to be passivated. We conclude that the choice of substrate controls both the effects of intrinsic defects and extrinsic disorder, and thus the electronic and optical properties of MoS2. The correlation of substrate induced disorder and defects on the electronic and optical properties of MoS2 contributes to an in-depth understanding of the role of the substrates on the performance of 2D materials and will help to further improve the properties of 2D materials based quantum nanosystems. △ Less

Submitted 3 May, 2019; originally announced May 2019.

Comments: 23 pages, 4 figures

Hybridized indirect excitons in MoS2/WS2 heterobilayers

Authors: Jonas Kiemle, Florian Sigger, Michael Lorke, Bastian Miller, Kenji Watanabe, Takashi Taniguchi, Alexander Holleitner, Ursula Wurstbauer

Abstract: Ensembles of indirect or interlayer excitons (IXs) are intriguing systems to explore classical and quantum phases of interacting bosonic ensembles. IXs are composite bosons that feature enlarged lifetimes due to the reduced overlap of the electron-hole wave functions. We demonstrate electric Field control of indirect excitons in MoS2/WS2 hetero-bilayers embedded in a field effect structure with fe… ▽ More Ensembles of indirect or interlayer excitons (IXs) are intriguing systems to explore classical and quantum phases of interacting bosonic ensembles. IXs are composite bosons that feature enlarged lifetimes due to the reduced overlap of the electron-hole wave functions. We demonstrate electric Field control of indirect excitons in MoS2/WS2 hetero-bilayers embedded in a field effect structure with few-layer hexagonal boron nitrite as insulator and few-layer graphene as gate-electrodes. The different strength of the excitonic dipoles and a distinct temperature dependence identify the indirect excitons to stem from optical interband transitions with electrons and holes located in different valleys of the hetero-bilayer featuring highly hybridized electronic states. For the energetically lowest emission lines, we observe a field-dependent level anticrossing at low temperatures. We discuss this behavior in terms of coupling of electronic states from the two semiconducting monolayers resulting in spatially delocalized excitons of the hetero-bilayer behaving like an artificial van der Waals solid. Our results demonstrate the design of novel nano-quantum materials prepared from artificial van der Waals solids with the possibility to in-situ control their physical properties via external stimuli such as electric fields. △ Less

Submitted 27 December, 2018; originally announced December 2018.

Comments: 4 figures;

Photo-induced anomalous Hall effect in the type-II Weyl-semimetal WTe2 at room-temperature

Authors: Paul Seifert, Florian Sigger, Jonas Kiemle, Kenji Watanabe, Takashi Taniguchi, Christoph Kastl, Ursula Wurstbauer, Alexander Holleitner

Abstract: Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a di… ▽ More Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exceeds the electron-phonon scattering time by orders of magnitude but is consistent with the comparatively long spin-lifetime of carriers in the momentum-indirect electron and hole pockets in WTe2. Our observation suggests, that a helical modulation of an otherwise isotropic spin-current is the underlying mechanism of the anomalous Hall effect. △ Less

Submitted 2 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 99, 161403 (2019)