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Tailored topotactic chemistry unlocks heterostructures of magnetic intercalation compounds
Authors:
Samra Husremović,
Oscar Gonzalez,
Berit H. Goodge,
Lilia S. Xie,
Zhizhi Kong,
Wanlin Zhang,
Sae Hee Ryu,
Stephanie M. Ribet,
Karen C. Bustillo,
Chengyu Song,
Jim Ciston,
Takashi Taniguchi,
Kenji Watanabe,
Colin Ophus,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
D. Kwabena Bediako
Abstract:
The construction of thin film heterostructures has been a widely successful archetype for fabricating materials with emergent physical properties. This strategy is of particular importance for the design of multilayer magnetic architectures in which direct interfacial spin--spin interactions between magnetic phases in dissimilar layers lead to emergent and controllable magnetic behavior. However,…
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The construction of thin film heterostructures has been a widely successful archetype for fabricating materials with emergent physical properties. This strategy is of particular importance for the design of multilayer magnetic architectures in which direct interfacial spin--spin interactions between magnetic phases in dissimilar layers lead to emergent and controllable magnetic behavior. However, crystallographic incommensurability and atomic-scale interfacial disorder can severely limit the types of materials amenable to this strategy, as well as the performance of these systems. Here, we demonstrate a method for synthesizing heterostructures comprising magnetic intercalation compounds of transition metal dichalcogenides (TMDs), through directed topotactic reaction of the TMD with a metal oxide. The mechanism of the intercalation reaction enables thermally initiated intercalation of the TMD from lithographically patterned oxide films, giving access to a new family of multi-component magnetic architectures through the combination of deterministic van der Waals assembly and directed intercalation chemistry.
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Submitted 21 June, 2024;
originally announced June 2024.
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Gate-defined quantum point contacts in a germanium quantum well
Authors:
Han Gao,
Zhen-Zhen Kong,
Po Zhang,
Yi Luo,
Haitian Su,
Xiao-Fei Liu,
Gui-Lei Wang,
Ji-Yin Wang,
H. Q. Xu
Abstract:
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$. Bias-spectroscopy measurements reveal that the energy spacing between successive one-dimensional subbands ranges from 1.5 to 5\,meV as a consequence of the small effec…
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We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$. Bias-spectroscopy measurements reveal that the energy spacing between successive one-dimensional subbands ranges from 1.5 to 5\,meV as a consequence of the small effective mass of the holes and the narrow gate constrictions. At finite magnetic fields perpendicular to the device plane, the edges of the conductance plateaus get splitted due to the Zeeman effect and Landé $g$ factors are estimated to be $\sim6.6$ for the holes in the germanium quantum well. We demonstrate that all quantum point contacts in the same device have comparable performances, indicating a reliable and reproducible device fabrication process. Thus, our work lays a foundation for investigating multiple forefronts of physics in germanium-based quantum devices that require quantum point contacts as a building block.
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Submitted 5 May, 2024;
originally announced May 2024.
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A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots
Authors:
Ming Ni,
Rong-Long Ma,
Zhen-Zhen Kong,
Ning Chu,
Sheng-Kai Zhu,
Chu Wang,
Ao-Ran Li,
Wei-Zhu Liao,
Gang Cao,
Gui-Lei Wang,
Guang-Can Guo,
Xuedong Hu,
Hai-Ou Li,
Guo-Ping Guo
Abstract:
To realize large-scale quantum information processes, an ideal scheme for two-qubit operations should enable diverse operations with given hardware and physical interaction. However, for spin qubits in semiconductor quantum dots, the common two-qubit operations, including CPhase gates, SWAP gates, and CROT gates, are realized with distinct parameter regions and control waveforms, posing challenges…
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To realize large-scale quantum information processes, an ideal scheme for two-qubit operations should enable diverse operations with given hardware and physical interaction. However, for spin qubits in semiconductor quantum dots, the common two-qubit operations, including CPhase gates, SWAP gates, and CROT gates, are realized with distinct parameter regions and control waveforms, posing challenges for their simultaneous implementation. Here, taking advantage of the inherent Heisenberg interaction between spin qubits, we propose and verify a fast composite two-qubit gate scheme to extend the available two-qubit gate types as well as reduce the requirements for device properties. Apart from the formerly proposed CPhase (controlled-phase) gates and SWAP gates, theoretical results indicate that the iSWAP-family gate and Fermionic simulation (fSim) gate set are additionally available for spin qubits. Meanwhile, our gate scheme limits the parameter requirements of all essential two-qubit gates to a common J~ΔE_Z region, facilitate the simultaneous realization of them. Furthermore, we present the preliminary experimental demonstration of the composite gate scheme, observing excellent match between the measured and simulated results. With this versatile composite gate scheme, broad-spectrum two-qubit operations allow us to efficiently utilize the hardware and the underlying physics resources, helping accelerate and broaden the scope of the upcoming noise intermediate-scale quantum (NISQ) computing.
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Submitted 29 April, 2024;
originally announced April 2024.
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Coupling of hole double quantum dot in planar germanium to a microwave cavity
Authors:
Yuan Kang,
Zong-Hu Li,
Zhen-Zhen Kong,
Fang-Ge Li,
Tian-Yue Hao,
Ze-Cheng Wei,
Song-Yan Deng,
Bao-Chuan Wang,
Hai-Ou Li,
Gui-Lei Wang,
Guang-Can Guo,
Gang Cao,
Guo-Ping Guo
Abstract:
In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approach for achieving long-range coupling and scaling up of qubits. Here, we demonstrate the coupling between holes in a planar germanium double quantum dot (DQD) and photons in a microwave cavity. Specifically, a real-time c…
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In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approach for achieving long-range coupling and scaling up of qubits. Here, we demonstrate the coupling between holes in a planar germanium double quantum dot (DQD) and photons in a microwave cavity. Specifically, a real-time calibrated virtual gate method is developed to characterize this hybrid system, which in turn allows us to determine the typical parameters sequentially through single-parameter fitting instead of conventional multi-parameter fitting with additional uncertainty, and gives the hole-photon coupling rate of $g_0/2π$ = 21.7 MHz. This work is a step toward further research on hole-photon interactions and long-range qubit coupling in planar germanium. The experimental method developed in this work contributes to the more accurate and efficient characterization of hybrid cavity-QED systems.
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Submitted 12 October, 2023;
originally announced October 2023.
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A SWAP Gate for Spin Qubits in Silicon
Authors:
Ming Ni,
Rong-Long Ma,
Zhen-Zhen Kong,
Xiao Xue,
Sheng-Kai Zhu,
Chu Wang,
Ao-Ran Li,
Ning Chu,
Wei-Zhu Liao,
Gang Cao,
Gui-Lei Wang,
Guang-Can Guo,
Xuedong Hu,
Hong-Wen Jiang,
Hai-Ou Li,
Guo-Ping Guo
Abstract:
With one- and two-qubit gate fidelities approaching the fault-tolerance threshold for spin qubits in silicon, how to scale up the architecture and make large arrays of spin qubits become the more pressing challenges. In a scaled-up structure, qubit-to-qubit connectivity has crucial impact on gate counts of quantum error correction and general quantum algorithms. In our toolbox of quantum gates for…
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With one- and two-qubit gate fidelities approaching the fault-tolerance threshold for spin qubits in silicon, how to scale up the architecture and make large arrays of spin qubits become the more pressing challenges. In a scaled-up structure, qubit-to-qubit connectivity has crucial impact on gate counts of quantum error correction and general quantum algorithms. In our toolbox of quantum gates for spin qubits, SWAP gate is quite versatile: it can help solve the connectivity problem by realizing both short- and long-range spin state transfer, and act as a basic two-qubit gate, which can reduce quantum circuit depth when combined with other two-qubit gates. However, for spin qubits in silicon quantum dots, high fidelity SWAP gates have not been demonstrated due to the requirements of large circuit bandwidth and a highly adjustable ratio between the strength of the exchange coupling J and the Zeeman energy difference Delta E_z. Here we demonstrate a fast SWAP gate with a duration of ~25 ns based on quantum dots in isotopically enriched silicon, with a highly adjustable ratio between J and Delta E_z, for over two orders of magnitude in our device. We are also able to calibrate the single-qubit local phases during the SWAP gate by incorporating single-qubit gates in our circuit. By independently reading out the qubits, we probe the anti-correlations between the two spins, estimate the operation fidelity and analyze the dominant error sources for our SWAP gate. These results pave the way for high fidelity SWAP gates, and processes based on them, such as quantum communication on chip and quantum simulation by engineering the Heisenberg Hamiltonian in silicon.
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Submitted 10 October, 2023;
originally announced October 2023.
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Single spin qubit geometric gate in a silicon quantum dot
Authors:
Rong-Long Ma,
Ao-Ran Li,
Chu Wang,
Zhen-Zhen Kong,
Wei-Zhu Liao,
Ming Ni,
Sheng-Kai Zhu,
Ning Chu,
Cheng-Xian Zhang,
Di Liu,
Gang Cao,
Gui-Lei Wang,
Hai-Ou Li,
Guo-Ping Guo
Abstract:
Preserving qubit coherence and maintaining high-fidelity qubit control under complex noise environment is an enduring challenge for scalable quantum computing. Here we demonstrate an addressable fault-tolerant single spin qubit with an average control fidelity of 99.12% via randomized benchmarking on a silicon quantum dot device with an integrated micromagnet. Its dephasing time T2* is 1.025 us an…
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Preserving qubit coherence and maintaining high-fidelity qubit control under complex noise environment is an enduring challenge for scalable quantum computing. Here we demonstrate an addressable fault-tolerant single spin qubit with an average control fidelity of 99.12% via randomized benchmarking on a silicon quantum dot device with an integrated micromagnet. Its dephasing time T2* is 1.025 us and can be enlarged to 264 us by using the Hahn echo technique, reflecting strong low-frequency noise in our system. To break through the noise limitation, we introduce geometric quantum computing to obtain high control fidelity by exploiting its noise-resilient feature. However, the control fidelities of the geometric quantum gates are lower than 99%. According to our simulation, the noise-resilient feature of geometric quantum gates is masked by the heating effect. With further optimization to alleviate the heating effect, geometric quantum computing can be a potential approach to reproducibly achieving high-fidelity qubit control in a complex noise environment.
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Submitted 10 October, 2023;
originally announced October 2023.
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Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
Authors:
Rong-Long Ma,
Sheng-Kai Zhu,
Zhen-Zhen Kong,
Tai-Ping Sun,
Ming Ni,
Yu-Chen Zhou,
Yuan Zhou,
Gang Luo,
Gang Cao,
Gui-Lei Wang,
Hai-Ou Li,
Guo-Ping Guo
Abstract:
High-fidelity singlet-triplet state readout is essential for large-scale quantum computing. However, the widely used threshold method of comparing a mean value with the fixed threshold will limit the judgment accuracy, especially for the relaxed triplet state, under the restriction of relaxation time and signal-to-noise ratio. Here, we achieve an enhanced latching readout based on Pauli spin block…
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High-fidelity singlet-triplet state readout is essential for large-scale quantum computing. However, the widely used threshold method of comparing a mean value with the fixed threshold will limit the judgment accuracy, especially for the relaxed triplet state, under the restriction of relaxation time and signal-to-noise ratio. Here, we achieve an enhanced latching readout based on Pauli spin blockade in a Si-MOS double quantum dot device and demonstrate an average singlet-triplet state readout fidelity of 97.59% by the threshold method. We reveal the inherent deficiency of the threshold method for the relaxed triplet state classification and introduce machine learning as a relaxation-independent readout method to reduce the misjudgment. The readout fidelity for classifying the simulated single-shot traces can be improved to 99.67% by machine learning method, better than the threshold method of 97.54% which is consistent with the experimental result. This work indicates that machine learning method can be a strong potential candidate for alleviating the restrictions of stably achieving high-fidelity and high-accuracy singlet-triplet state readout in large-scale quantum computing.
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Submitted 18 September, 2023;
originally announced September 2023.
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Correcting on-chip distortion of control pulses with silicon spin qubits
Authors:
Ming Ni,
Rong-Long Ma,
Zhen-Zhen Kong,
Ning Chu,
Wei-Zhu Liao,
Sheng-Kai Zhu,
Chu Wang,
Gang Luo,
Di Liu,
Gang Cao,
Gui-Lei Wang,
Hai-Ou Li,
Guo-Ping Guo
Abstract:
Pulse distortion, as one of the coherent error sources, hinders the characterization and control of qubits. In the semiconductor quantum dot system, the distortions on measurement pulses and control pulses disturb the experimental results, while no effective calibration procedure has yet been reported. Here, we demonstrate two different calibration methods to calibrate and correct the distortion u…
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Pulse distortion, as one of the coherent error sources, hinders the characterization and control of qubits. In the semiconductor quantum dot system, the distortions on measurement pulses and control pulses disturb the experimental results, while no effective calibration procedure has yet been reported. Here, we demonstrate two different calibration methods to calibrate and correct the distortion using the two-qubit system as a detector. The two calibration methods have different correction accuracy and complexity. One is the coarse predistortion (CPD) method, with which the distortion is partly relieved. The other method is the all predistortion (APD) method, with which we measure the transfer function and significantly improve the exchange oscillation homogeneity. The two methods use the exchange oscillation homogeneity as the metric and are appropriate for any qubit that oscillates with a diabatic pulse. With the APD procedure, an arbitrary control waveform can be accurately delivered to the device, which is essential for characterizing qubits and improving gate fidelity.
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Submitted 18 September, 2023;
originally announced September 2023.
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Near room-temperature intrinsic exchange bias in an Fe intercalated ZrSe2 spin glass
Authors:
Zhizhi Kong,
Corey J. Kaminsky,
Catherine K. Groschner,
Ryan A. Murphy,
Yun Yu,
Samra Husremović,
Lilia S. Xie,
Matthew P. Erodici,
R. Soyoung Kim,
Junko Yano,
D. Kwabena Bediako
Abstract:
Some magnetic systems display a shift in the center of their magnetic hysteresis loop away from zero field, a phenomenon termed exchange bias. Despite the extensive use of the exchange bias effect, particularly in magnetic multilayers, for the design of spin-based memory/electronics devices, a comprehensive mechanistic understanding of this effect remains a longstanding problem. Recent work has sh…
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Some magnetic systems display a shift in the center of their magnetic hysteresis loop away from zero field, a phenomenon termed exchange bias. Despite the extensive use of the exchange bias effect, particularly in magnetic multilayers, for the design of spin-based memory/electronics devices, a comprehensive mechanistic understanding of this effect remains a longstanding problem. Recent work has shown that disorder-induced spin frustration might play a key role in exchange bias, suggesting new materials design approaches for spin-based electronic devices that harness this effect. Here, we design a spin glass with strong spin frustration induced by magnetic disorder by exploiting the distinctive structure of Fe intercalated ZrSe2, where Fe(II) centers are shown to occupy both octahedral and tetrahedral interstitial sites and to distribute between ZrSe2 layers without long-range structural order. Notably, we observe behavior consistent with a magnetically frustrated, and multi-degenerate ground state in these Fe0.17ZrSe2 single crystals, which persists above room temperature. Moreover, this magnetic frustration leads to a robust and tunable exchange bias up to 250 K. These results not only offer important insights into the effects of magnetic disorder and frustration in magnetic materials generally, but also highlight as design strategy the idea that a large exchange bias can arise from an inhomogeneous microscopic environment without discernible long-range magnetic order. In addition, these results show that intercalated TMDs like Fe0.17ZrSe2 hold potential for spintronics technologies that can achieve room temperature applications.
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Submitted 25 August, 2023; v1 submitted 10 July, 2023;
originally announced July 2023.
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Flopping-mode spin qubit in a Si-MOS quantum dot
Authors:
Rui-Zi Hu,
Rong-Long Ma,
Ming Ni,
Yuan Zhou,
Ning Chu,
Wei-Zhu Liao,
Zhen-Zhen Kong,
Gang Cao,
Gui-Lei Wang,
Hai-Ou Li,
Guo-Ping Guo
Abstract:
Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flopping-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate…
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Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flopping-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.
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Submitted 22 March, 2023; v1 submitted 28 September, 2022;
originally announced September 2022.
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Signatures of cooperative emission in photon coincidence: Superradiance versus measurement-induced cooperativity
Authors:
Moritz Cygorek,
Eleanor D. Scerri,
Ted S. Santana,
Zhe X. Koong,
Brian D. Gerardot,
Erik M. Gauger
Abstract:
Indistinguishable quantum emitters confined to length scales smaller than the wavelength of the light become superradiant. Compared to uncorrelated and distinguishable emitters, superradiance results in qualitative modifications of optical signals such as photon coincidences. However, recent experiments revealed that similar signatures can also be obtained in situations where emitters are too far…
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Indistinguishable quantum emitters confined to length scales smaller than the wavelength of the light become superradiant. Compared to uncorrelated and distinguishable emitters, superradiance results in qualitative modifications of optical signals such as photon coincidences. However, recent experiments revealed that similar signatures can also be obtained in situations where emitters are too far separated to be superradiant if correlations between emitters are induced by the wave function collapse during an emission-angle-selective photon detection event. Here, we compare two sources for cooperative emission, superradiance and measurement-induced cooperativity, and analyze their impact on time-dependent optical signals. We find that an anti-dip in photon coincidences at zero time delay is a signature of inter-emitter correlations in general but does not unambiguously prove the presence of superradiance. This suggests that photon coincidences at zero time delay alone are not sufficient and time-dependent data is necessary to clearly demonstrate a superradiant enhancement of the spontaneous radiative decay rate.
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Submitted 26 February, 2023; v1 submitted 12 August, 2022;
originally announced August 2022.
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Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots
Authors:
Rui-Zi Hu,
Sheng-Kai Zhu,
Xin Zhang,
Yuan Zhou,
Ming Ni,
Rong-Long Ma,
Zhen-Zhen Kong,
Gui-Lei Wang,
Gang Cao,
Hai-Ou Li,
Guo-Ping Guo
Abstract:
The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process is sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and r…
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The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process is sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. Then, we analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage we ensure the accuracy of the extrapolated probability. Then, we prove that the efficiency and robustness of this method is 60 times larger than that of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout up to 0.7 K/1.5T in the future.
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Submitted 7 July, 2023; v1 submitted 7 June, 2022;
originally announced June 2022.
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Observation of fractal topological states in acoustic metamaterials
Authors:
Shengjie Zheng,
Xianfeng Man,
Ze-Lin Kong,
Zhi-Kang Lin,
Guiju Duan,
Ning Chen,
Dejie Yu,
Jian-Hua Jiang,
Baizhan Xia
Abstract:
Topological phases of matter have been extensively investigated in solid state materials and classical wave systems with integer dimensions. However, topological states in non-integer dimensions remain largely unexplored. Fractals, being nearly the same at different scales, are one of the intriguing complex geometries with non-integer dimensions. Here, we demonstrate acoustic Sierpiński fractal to…
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Topological phases of matter have been extensively investigated in solid state materials and classical wave systems with integer dimensions. However, topological states in non-integer dimensions remain largely unexplored. Fractals, being nearly the same at different scales, are one of the intriguing complex geometries with non-integer dimensions. Here, we demonstrate acoustic Sierpiński fractal topological insulators with unconventional higher-order topological phenomena via consistent theory and experiments. We discover abundant topological edge and corner states emerging in our acoustic systems due to the rich edge and corner boundaries inside the fractals. Interestingly, the numbers of the edge and corner states scale the same as the bulk states with the system size and the exponents coincide with the Hausdorff fractal dimension of the Sierpiński carpet. Furthermore, the emergent corner states exhibit unconventional spectrum and wave patterns. Our study opens a pathway toward topological states in fractal geometries.
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Submitted 9 May, 2022;
originally announced May 2022.
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Observation of an acoustic topological Euler insulator with meronic waves
Authors:
Bin Jiang,
Adrien Bouhon,
Shi-Qiao Wu,
Ze-Lin Kong,
Zhi-Kang Lin,
Robert-Jan Slager,
Jian-Hua Jiang
Abstract:
Topological band theory has conventionally been concerned with the topology of bands around a single gap. Only recently non-Abelian {topologies that thrive on involving multiple gaps} were studied, unveiling a new horizon {in topological physics} beyond the conventional paradigm. Here, we report on the first experimental realization of a topological Euler insulator phase with unique meronic charac…
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Topological band theory has conventionally been concerned with the topology of bands around a single gap. Only recently non-Abelian {topologies that thrive on involving multiple gaps} were studied, unveiling a new horizon {in topological physics} beyond the conventional paradigm. Here, we report on the first experimental realization of a topological Euler insulator phase with unique meronic characterization in an acoustic metamaterial. We demonstrate that this topological phase has several nontrivial features: First, the system cannot be {described} by conventional topological band theory, but has a nontrivial Euler class that captures the unconventional geometry {of the Bloch} bands {in the Brillouin zone}. Second, we uncover in theory and probe in experiments a meronic configuration of the bulk Bloch states for the first time. Third, using a detailed symmetry {analysis}, we show that the topological Euler insulator evolves from {a non-Abelian topological semimetal phase via the annihilation of Dirac points in pairs in one of the band gaps}. With these nontrivial properties, we establish concretely an unconventional bulk-edge correspondence which is confirmed by directly measuring the edge states via {pump-probe techniques}. Our work thus unveils a nontrivial topological Euler insulator phase with {a unique} meronic {pattern} and paves the way as a platform for {non-Abelian topological} phenomena.
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Submitted 27 August, 2024; v1 submitted 6 May, 2022;
originally announced May 2022.
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Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition
Authors:
Zhenzhen Kong,
Zonghu Li,
Gang Cao,
Jiale Su,
Yiwen Zhang,
Jinbiao Liu,
Jingxiong Liu,
Yuhui Ren,
Laiming Wei,
Guoping Guo,
Yuanyuan Wu,
Henry H. Radamson,
Junfeng Li,
Zhenhua Wu,
Haiou Li,
Jiecheng Yang,
Chao Zhao,
Guilei Wang
Abstract:
We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel st…
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We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel strain -0.41% in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel get a high two-dimensional hole gas (2DHG) mobility over 2E6 cm2/Vs at a low percolation density of 2.51 E-11 cm2. We also discover a tunable fractional quantum Hall effect at high densities and high magnetic fields. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum computation.
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Submitted 3 August, 2022; v1 submitted 25 April, 2022;
originally announced April 2022.
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Topological Wannier cycles for the bulk and edges
Authors:
Ze-Lin Kong,
Zhi-Kang Lin,
Jian-Hua Jiang
Abstract:
Topological materials are often characterized by unique edge states which are in turn used to detect different topological phases in experiments. Recently, with the discovery of various higher-order topological insulators, such spectral topological characteristics are extended from edge states to corner states. However, the chiral symmetry protecting the corner states is often broken in genuine ma…
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Topological materials are often characterized by unique edge states which are in turn used to detect different topological phases in experiments. Recently, with the discovery of various higher-order topological insulators, such spectral topological characteristics are extended from edge states to corner states. However, the chiral symmetry protecting the corner states is often broken in genuine materials, leading to vulnerable corner states even when the higher-order topological numbers remain quantized and invariant. Here, we show that a local artificial gauge flux can serve as a robust probe of the Wannier type higher-order topological insulators which is effective even when the chiral symmetry is broken. The resultant observable signature is the emergence of the cyclic spectral flows traversing one or multiple band gaps. These spectral flows are associated with the local modes bound to the artificial gauge flux. This phenomenon is essentially due to the cyclic transformation of the Wannier orbitals when the local gauge flux acts on them. We extend topological Wannier cycles to systems with C2 and C3 symmetries and show that they can probe both the bulk and the edge Wannier centers, yielding rich topological phenomena.
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Submitted 12 May, 2022; v1 submitted 12 October, 2021;
originally announced October 2021.
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Coherence in Cooperative Photon Emission from Indistinguishable Quantum Emitters
Authors:
Zhe Xian Koong,
Moritz Cygorek,
Eleanor Scerri,
Ted S. Santana,
Suk-In Park,
Jin Dong Song,
Erik M. Gauger,
Brian D. Gerardot
Abstract:
Photon-mediated interactions between atomic systems can arise via coupling to a common electromagnetic mode or by quantum interference. Here, we probe the role of coherence in cooperative emission arising from two distant but indistinguishable solid-state emitters because of path erasure. The primary signature of cooperative emission, the emergence of "bunching" at zero delay in an intensity corre…
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Photon-mediated interactions between atomic systems can arise via coupling to a common electromagnetic mode or by quantum interference. Here, we probe the role of coherence in cooperative emission arising from two distant but indistinguishable solid-state emitters because of path erasure. The primary signature of cooperative emission, the emergence of "bunching" at zero delay in an intensity correlation experiment, is used to characterise the indistinguishability of the emitters, their dephasing, and the degree of correlation in the joint system that can be coherently controlled. In a stark departure from a pair of uncorrelated emitters, in Hong-Ou-Mandel type interference measurements we observe photon statistics from a pair of indistinguishable emitters resembling that of a weak coherent state from an attenuated laser. Our experiments establish techniques to control and characterize cooperative behavior between matter qubits using the full quantum optics toolbox, a key step toward realizing large-scale quantum photonic networks.
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Submitted 19 March, 2022; v1 submitted 19 May, 2021;
originally announced May 2021.
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Oblique and asymmetric Klein tunneling across smooth NP junctions or NPN junctions in 8-Pmmn borophene
Authors:
Zhan Kong,
Jian Li,
Yi Zhang,
Shu-Hui Zhang,
Jia-Ji Zhu
Abstract:
The tunneling of electrons and holes in quantum structures plays a crucial role in studying the transport properties of materials and the related devices. 8-Pmmn borophene is a new two-dimensional Dirac material, which hosts tilted Dirac cone and chiral, anisotropic massless Dirac fermions. We develop the transfer matrix method to investigate the Klein tunneling of massless fermions across the smo…
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The tunneling of electrons and holes in quantum structures plays a crucial role in studying the transport properties of materials and the related devices. 8-Pmmn borophene is a new two-dimensional Dirac material, which hosts tilted Dirac cone and chiral, anisotropic massless Dirac fermions. We develop the transfer matrix method to investigate the Klein tunneling of massless fermions across the smooth NP junctions and NPN junctions of 8-Pmmn borophene. Like the sharp NP junctions of 8-Pmmn borophene, the tilted Dirac cones induce the oblique Klein tunneling. The angle of perfect transmission to the normal incidence is 20.4 degrees, a constant determined by the Hamiltonian of 8-Pmmn borophene. For the NPN junction, there are branches of the Klein tunneling in the phase diagram. We find that the asymmetric Klein tunneling is induced by the chirality and anisotropy of the carriers. Furthermore, we show the oscillation of electrical resistance related to the Klein tunneling in the NPN junctions. One may analyze the pattern of electrical resistance and verify the existence of asymmetric Klein tunneling experimentally.
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Submitted 3 August, 2021; v1 submitted 13 April, 2021;
originally announced April 2021.
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A Bright Source of Telecom Single Photons Based on Quantum Frequency Conversion
Authors:
Christopher L. Morrison,
Markus Rambach,
Zhe Xian Koong,
Francesco Graffitti,
Fiona Thorburn,
Ajoy K. Kar,
Yong Ma,
Suk-In Park,
Jin Dong Song,
Nick G. Stoltz,
Dirk Bouwmeester,
Alessandro Fedrizzi,
Brian D. Gerardot
Abstract:
On-demand indistinguishable single photon sources are essential for quantum networking and communication. Semiconductor quantum dots are among the most promising candidates, but their typical emission wavelength renders them unsuitable for use in fibre networks. Here, we present quantum frequency conversion of near-infrared photons from a bright quantum dot to the telecommunication C-band, allowin…
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On-demand indistinguishable single photon sources are essential for quantum networking and communication. Semiconductor quantum dots are among the most promising candidates, but their typical emission wavelength renders them unsuitable for use in fibre networks. Here, we present quantum frequency conversion of near-infrared photons from a bright quantum dot to the telecommunication C-band, allowing integration with existing fibre architectures. We use a custom-built, tunable 2400 nm seed laser to convert single photons from 942 nm to 1550 nm in a difference frequency generation process. We achieve an end-to-end conversion efficiency of $\sim$35%, demonstrate count rates approaching 1 MHz at 1550 nm with $g^{\left(2\right)}\left(0\right) = 0.04$, and achieve Hong-Ou-Mandel visibilities of 60%. We expect this scheme to be preferable to quantum dot sources directly emitting at telecom wavelengths for fibre based quantum networking.
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Submitted 27 January, 2021;
originally announced January 2021.
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Superfluid Optomechanics with Phononic Nanostructures
Authors:
S. Spence,
Z. X. Koong,
S. A. R. Horsley,
X. Rojas
Abstract:
In quantum optomechanics, finding materials and strategies to limit losses has been crucial to the progress of the field. Recently, superfluid 4He was proposed as a promising mechanical element for quantum optomechanics. This quantum fluid shows highly desirable properties (e.g. extremely low acoustic loss) for a quantum optomechanical system. In current implementations, superfluid optomechanical…
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In quantum optomechanics, finding materials and strategies to limit losses has been crucial to the progress of the field. Recently, superfluid 4He was proposed as a promising mechanical element for quantum optomechanics. This quantum fluid shows highly desirable properties (e.g. extremely low acoustic loss) for a quantum optomechanical system. In current implementations, superfluid optomechanical systems suffer from external sources of loss, which spoils the quality factor of resonators. In this work, we propose a new implementation, exploiting nanofluidic confinement. Our approach, based on acoustic resonators formed within phononic nanostructures, aims at limiting radiation losses to preserve the intrinsic properties of superfluid 4He. In this work, we estimate the optomechanical system parameters. Using recent theory, we derive the expected quality factors for acoustic resonators in different thermodynamic conditions. We calculate the sources of loss induced by the phononic nanostructures with numerical simulations. Our results indicate the feasibility of the proposed approach in a broad range of parameters, which opens new prospects for more complex geometries.
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Submitted 19 December, 2020;
originally announced December 2020.
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Coherent Dynamics in Quantum Emitters under Dichromatic Excitation
Authors:
Z. X. Koong,
E. Scerri,
M. Rambach,
M. Cygorek,
M. Brotons-Gisbert,
R. Picard,
Y. Ma,
S. I. Park,
J. D. Song,
E. M. Gauger,
B. D. Gerardot
Abstract:
We characterize the coherent dynamics of a two-level quantum emitter driven by a pair of symmetrically-detuned phase-locked pulses. The promise of dichromatic excitation is to spectrally isolate the excitation laser from the quantum emission, enabling background-free photon extraction from the emitter. Paradoxically, we find that excitation is not possible without spectral overlap between the exci…
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We characterize the coherent dynamics of a two-level quantum emitter driven by a pair of symmetrically-detuned phase-locked pulses. The promise of dichromatic excitation is to spectrally isolate the excitation laser from the quantum emission, enabling background-free photon extraction from the emitter. Paradoxically, we find that excitation is not possible without spectral overlap between the exciting pulse and the quantum emitter transition for ideal two-level systems due to cancellation of the accumulated pulse area. However, any additional interactions that interfere with cancellation of the accumulated pulse area may lead to a finite stationary population inversion. Our spectroscopic results of a solid-state two-level system show that while coupling to lattice vibrations helps to improve the inversion efficiency up to 50\% under symmetric driving, coherent population control and a larger amount of inversion are possible using asymmetric dichromatic excitation, which we achieve by adjusting the ratio of the intensities between the red and blue-detuned pulses. Our measured results, supported by simulations using a real-time path-integral method, offer a new perspective towards realising efficient, background-free photon generation and extraction.
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Submitted 4 September, 2020;
originally announced September 2020.
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Multiplexed Single Photons from Deterministically Positioned Nanowire Quantum Dots
Authors:
Zhe-Xian Koong,
Guillem Ballesteros-Garcia,
Raphaël Proux,
Dan Dalacu,
Philip J. Poole,
Brian D. Gerardot
Abstract:
Solid-state quantum emitters are excellent sources of on-demand indistinguishable or entangled photons and can host long-lived spin memories, crucial resources for photonic quantum information applications. However, their scalability remains an outstanding challenge. Here we present a scalable technique to multiplex streams of photons from multiple independent quantum dots, on-chip, into a fiber n…
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Solid-state quantum emitters are excellent sources of on-demand indistinguishable or entangled photons and can host long-lived spin memories, crucial resources for photonic quantum information applications. However, their scalability remains an outstanding challenge. Here we present a scalable technique to multiplex streams of photons from multiple independent quantum dots, on-chip, into a fiber network for use off-chip. Multiplexing is achieved by incorporating a multi-core fiber into a confocal microscope and spatially matching the multiple foci, seven in this case, to quantum dots in an array of deterministically positioned nanowires. First, we report the coherent control of the emission of biexciton-exciton cascade from a single nanowire quantum dot under resonant two-photon excitation. Then, as a proof-of-principle demonstration, we perform parallel spectroscopy on the nanowire array to identify two nearly identical quantum dots at different positions which are subsequently tuned into resonance with an external magnetic field. Multiplexing of background-free single photons from these two quantum dots is then achieved. Our approach, applicable to all types of quantum emitters, can readily be scaled up to multiplex $>100$ quantum light sources, providing a breakthrough in hardware for photonic based quantum technologies. Immediate applications include quantum communication, quantum simulation, and quantum computation.
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Submitted 11 May, 2020;
originally announced May 2020.
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A Study of Selectively Digital Etching Silicon-Germanium with Nitric and Hydrofluoric Acids
Authors:
Chen Li,
Huilong Zhu,
Yongkui Zhang,
Xiaogen Yin,
Kunpeng Jia,
Junjie Li,
Guilei Wang,
Zhenzhen Kong,
Anyan Du,
Tengzhi Yang,
Liheng Zhao,
Lu Xie,
Xuezheng Ai,
Shishuai Ma,
Yangyang Li,
Henry H. Radamson,
Chen Li,
Huilong Zhu,
Yongkui Zhang,
Xiaogen Yin,
Kunpeng Jia,
Junjie Li,
Guilei Wang,
Zhenzhen Kong,
Anyan Du
, et al. (7 additional authors not shown)
Abstract:
A digital etching method was proposed to achieve excellent control of etching depth. The digital etching characteristics of p+ Si and Si0.7Ge0.3 using the combinations of HNO3 oxidation and BOE oxide removal processes were studied. Experiments showed that oxidation saturates with time due to low activation energy. A physical model was presented to describe the wet oxidation process with nitric aci…
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A digital etching method was proposed to achieve excellent control of etching depth. The digital etching characteristics of p+ Si and Si0.7Ge0.3 using the combinations of HNO3 oxidation and BOE oxide removal processes were studied. Experiments showed that oxidation saturates with time due to low activation energy. A physical model was presented to describe the wet oxidation process with nitric acid. The model was calibrated with experimental data and the oxidation saturation time, final oxide thickness, and selectivity between Si0.7Ge0.3 and p+ Si were obtained. The digital etch of laminated Si0.7Ge0.3/p+ Si was also investigated. The depth of the tunnels formed by etching SiGe layers between two Si layers was found in proportion to digital etching cycles. And oxidation would also saturate and the saturated relative etched amount per cycle (REPC) was 0.5 nm (4 monolayers). A corrected selectivity calculation formula was presented. The oxidation model was also calibrated with Si0.7Ge0.3/p+ Si stacks, and selectivity from model was the same with the corrected formula. The model can also be used to analyze process variations and repeatability. And it could act as a guidance for experiment design. Selectivity and repeatability should make a trade-off.
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Submitted 7 March, 2020;
originally announced March 2020.
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Highly tunable quantum light from moiré trapped excitons
Authors:
Hyeonjun Baek,
Mauro Brotons-Gisbert,
Zhe Xian Koong,
Aidan Campbell,
Markus Rambach,
Kenji Watanabe,
Takashi Taniguchi,
Brian D. Gerardot
Abstract:
Photon antibunching, a hallmark of quantum light, has been observed in the correlations of light from isolated atomic and atomic-like solid-state systems. Two-dimensional semiconductor heterostructures offer a unique method to create a quantum light source: a small lattice mismatch or relative twist in a heterobilayer can create moiré trapping potentials for excitons which are predicted to create…
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Photon antibunching, a hallmark of quantum light, has been observed in the correlations of light from isolated atomic and atomic-like solid-state systems. Two-dimensional semiconductor heterostructures offer a unique method to create a quantum light source: a small lattice mismatch or relative twist in a heterobilayer can create moiré trapping potentials for excitons which are predicted to create arrays of quantum emitters. While signatures of moiré trapped excitons have been observed, their quantum nature has yet to be confirmed. Here we report photon antibunching from single moiré trapped interlayer excitons in a heterobilayer. Via polarization resolved magneto-optical spectroscopy, we demonstrate the discrete anharmonic spectra arise from bound band-edge electron-hole pairs trapped in moiré potentials. Finally, using an out-of-plane electric field, we exploit the large permanent dipole of interlayer excitons to achieve large DC Stark tuning, up to 40 meV, of the quantum emitters. Our results confirm the quantum nature of moiré confined excitons and open opportunities to investigate their inhomogeneity and interactions between the emitters or tune single emitters into resonance with cavity modes or other emitters.
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Submitted 15 January, 2020; v1 submitted 13 January, 2020;
originally announced January 2020.
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Fundamental Limits to Coherent Photon Generation with Solid-State Atomlike Transitions
Authors:
Zhe-Xian Koong,
Dale Scerri,
Markus Rambach,
Ted S. Santana,
Suk-In Park,
Jin D. Song,
Erik M. Gauger,
Brian D. Gerardot
Abstract:
Coherent generation of indistinguishable single photons is crucial for many quantum communication and processing protocols. Solid-state realizations of two-level atomic transitions or three-level spin-$Λ$ systems offer significant advantages over their atomic counterparts for this purpose, albeit decoherence can arise due to environmental couplings. One popular approach to mitigate dephasing is to…
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Coherent generation of indistinguishable single photons is crucial for many quantum communication and processing protocols. Solid-state realizations of two-level atomic transitions or three-level spin-$Λ$ systems offer significant advantages over their atomic counterparts for this purpose, albeit decoherence can arise due to environmental couplings. One popular approach to mitigate dephasing is to operate in the weak excitation limit, where excited state population is minimal and coherently scattered photons dominate over incoherent emission. Here we probe the coherence of photons produced using two-level and spin-$Λ$ solid-state systems. We observe that the coupling of the atomic-like transitions to the vibronic transitions of the crystal lattice is independent of driving strength and detuning. We apply a polaron master equation to capture the non-Markovian dynamics of the ground state vibrational manifolds. These results provide insight into the fundamental limitations for photon coherence from solid-state quantum emitters, with the consequence that deterministic single-shot quantum protocols are impossible and inherently probabilistic approaches must be embraced.
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Submitted 30 November, 2019; v1 submitted 10 April, 2019;
originally announced April 2019.
