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Phononic Crystals in Superfluid Thin-Film Helium
Authors:
Alexander Rolf Korsch,
Niccolò Fiaschi,
Simon Gröblacher
Abstract:
In recent years, nanomechanical oscillators in thin films of superfluid helium have attracted attention in the field of optomechanics due to their exceptionally low mechanical dissipation and optical scattering. Mechanical excitations in superfluid thin films - so-called third sound waves - can interact with the optical mode of an optical microresonator by modulation of its effective refractive in…
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In recent years, nanomechanical oscillators in thin films of superfluid helium have attracted attention in the field of optomechanics due to their exceptionally low mechanical dissipation and optical scattering. Mechanical excitations in superfluid thin films - so-called third sound waves - can interact with the optical mode of an optical microresonator by modulation of its effective refractive index enabling optomechanical coupling. Strong confinement of third sound modes enhances their intrinsic mechanical non-linearity paving the way for strong phonon-phonon interactions with applications in quantum optomechanics. Here, we realize a phononic crystal cavity confining third sound modes in a superfluid helium film to length scales close to the third sound wavelength. A few nanometer thick superfluid film is self-assembled on top of a silicon nanobeam optical resonator. The periodic patterning of the silicon material creates a periodic modulation of the superfluid film leading to the formation of a phononic band gap. By engineering the geometry of the silicon nanobeam, the phononic band gap allows the confinement of a localized phononic mode.
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Submitted 28 February, 2024;
originally announced February 2024.
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Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress
Authors:
Natasha Tomm,
Alexander R. Korsch,
Alisa Javadi,
Daniel Najer,
Rüdiger Schott,
Sascha R. Valentin,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distrib…
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A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating an n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode-splitting as a function of wavelength across the stopband. We demonstrate a reversible in-situ technique to tune the mode-splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of $\sim$11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode-splitting and its tuning across the stop-band leads to a quantitative understanding of the mechanism behind the results.
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Submitted 18 February, 2021;
originally announced February 2021.
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Suppression of surface-related loss in a gated semiconductor microcavity
Authors:
Daniel Najer,
Natasha Tomm,
Alisa Javadi,
Alexander R. Korsch,
Benjamin Petrak,
Daniel Riedel,
Vincent Dolique,
Sascha R. Valentin,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer…
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We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer of quantum dots in the intrinsic region. Free-carrier absorption in the highly doped n- and p-layers is minimized by positioning them close to a node of the vacuum electromagnetic-field. The surface, however, resides at an anti-node of the vacuum field and results in significant loss. These losses are much reduced by surface passivation. The strong dependence on wavelength implies that the main effect of the surface passivation is to eliminate the surface electric field, thereby quenching below-bandgap absorption via a Franz-Keldysh-like effect. An additional benefit is that the surface passivation reduces scattering at the GaAs surface. These results are important in other nano-photonic devices which rely on a GaAs-vacuum interface to confine the electromagnetic field.
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Submitted 17 February, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Influence of molecular beam effusion cell quality on optical and electrical properties of quantum dots and quantum wells
Authors:
G. N. Nguyen,
A. R. Korsch,
M. Schmidt,
C. Ebler,
P. A. Labud,
R. Schott,
P. Lochner,
F. Brinks,
A. D. Wieck,
A. Ludwig
Abstract:
Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this probl…
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Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this problem and find that reconditioning the aluminum cell by overheating can lead to a full recovery of the anomalies in photoluminescence and capacitance-voltage measurements, leading to excellent low noise heterostructures. Furthermore, we propose a method to sense photo-induced trap charges using capacitance-voltage spectroscopy on self-assembled quantum dots. Excitation energy-dependent ionization of defect centers leads to shifts in capacitance-voltage spectra which can be used to determine the charge density of photo-induced trap charges via 1D band structure simulations. This method can be performed on frequently used quantum dot diode structures.
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Submitted 30 September, 2020; v1 submitted 29 September, 2020;
originally announced September 2020.