Showing 1–16 of 16 results for author: Kotekar-Patil, D

Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides

Authors: Jarosław Pawłowski, Pankaj Kumar, Kenji Watanabe, Takashi Taniguchi, Konstantin S. Novoselov, Hugh O. H. Churchill, Dharmraj Kotekar-Patil

Abstract: Spin-valley properties in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDC) has attracted significant interest due to the possible applications in quantum computing. Spin-valley properties can be exploited in TMDC quantum dot (QD) with well-resolved energy levels. This requires smaller QDs, especially in material systems with heavy carrier effective mass e.g. TMDCs and si… ▽ More Spin-valley properties in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDC) has attracted significant interest due to the possible applications in quantum computing. Spin-valley properties can be exploited in TMDC quantum dot (QD) with well-resolved energy levels. This requires smaller QDs, especially in material systems with heavy carrier effective mass e.g. TMDCs and silicon. Device architectures employed for TMDC QDs so far have difficulty achieving smaller QDs. Therefore, an alternative approach in the device architecture is needed. Here, we propose a multilayer device architecture to achieve a gate-defined QD in TMDC with a relatively large energy splitting on the QD. We provide a range of device dimensions and dielectric thicknesses and its correlation with the QD energy splitting. The device architecture is modeled realistically. Moreover, we show that all the device parameters used in modeling are experimentally achievable. These studies lay the foundation for future work toward spin-valley qubits in TMDCs. The successful implementation of these device architectures will drive the technological development of 2D materials-based quantum technologies. △ Less

Submitted 1 March, 2024; v1 submitted 29 February, 2024; originally announced February 2024.

Comments: main text: 20 pages, 5 figures; supplementary: 9 pages, 7 figures

Excited state spectroscopy and spin splitting in atomically thin quantum dots

Authors: P. Kumar, H. Kim, S. Tripathy, K. Watanabe, T. Taniguchi, K. S. Novoselov, D. Kotekar-Patil

Abstract: Semiconducting transition metal dichalcogenides (TMDCs) are very promising materials for quantum dots and spin-qubit implementation. Reliable operation of spin qubits requires the knowledge of Landé g-factor, which can be measured by exploiting the discrete energy spectrum on a quantum dot. However, the quantum dots realized in TMDCs has yet to reach the required quality for reliable measurement o… ▽ More Semiconducting transition metal dichalcogenides (TMDCs) are very promising materials for quantum dots and spin-qubit implementation. Reliable operation of spin qubits requires the knowledge of Landé g-factor, which can be measured by exploiting the discrete energy spectrum on a quantum dot. However, the quantum dots realized in TMDCs has yet to reach the required quality for reliable measurement of g-factor. Quantum dot sizes reported in TMDCs so far are not small enough to observe discrete energy levels on them. Here, we report on electron transport through discrete energy levels of quantum dot in a single layer MoS2. The quantum dot energy levels are separated by few (5-6) meV such that the ground state and the excited state transitions are clearly visible. This well resolved energy separation allows us to accurately measure the ground state g-factor of ~5 in MoS2 quantum dots. We observe a spin filling sequence in our quantum dot under perpendicular magnetic field. Such a system offers an excellent testbed to measure the key parameters for evaluation and implementation of spin-valley qubits in TMDCs, thus accelerating the development of quantum systems in two dimensional semiconducting TMDCs. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Comments: 17 pages, 10 figures

Toward Valley-coupled Spin Qubits

Authors: Kuan Eng Johnson Goh, Fabio Bussolotti, Chit Siong Lau, Dharmraj Kotekar-Patil, Zi En Ooi, Jingyee Chee

Abstract: The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid-state spin qubits as residual spins from substrate, dielectri… ▽ More The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid-state spin qubits as residual spins from substrate, dielectric, electrodes or contaminants from processing contribute to spin decoherence. In the recent decade, valleytronics has seen a revival due to the discovery of valley-coupled spins in monolayer transition metal dichalcogenides. Such valley-coupled spins are protected by inversion asymmetry and time-reversal symmetry and are promising candidates for robust qubits. In this report, the progress toward building such qubits is presented. Following an introduction to the key attractions in fabricating such qubits, an up-to-date brief is provided for the status of each key step, highlighting advancements made and/or outstanding work to be done. This report concludes with a perspective on future development highlighting major remaining milestones toward scalable spin-valley qubits. △ Less

Submitted 22 April, 2020; v1 submitted 13 April, 2020; originally announced April 2020.

Comments: 40 pages, 12 figures

Si CMOS Platform for Quantum Information Processing

Authors: L. Hutin, R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, X. Jehl, S. Barraud, S. De Franceschi, M. Sanquer, M. Vinet

Abstract: We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself. We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2016 IEEE Symposium on VLSI Technology

Control of single spin in CMOS devices and its application for quantum bits

Authors: R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, A. Crippa, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, S. De Franceschi, X. Jehl, M. Sanquer

Abstract: We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conv… ▽ More We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conventional industrial fabrication processes. △ Less

Submitted 19 December, 2019; originally announced December 2019.

Comments: Published in "Emerging Devices for Low-Power and High-Performance Nanosystems; Physics, Novel Functions, and Data Processing" Edited by Simon Deleonibus, Pan Stanford Publisher 2018

SOI technology for quantum information processing

Authors: S. De Franceschi, L. Hutin, R. Maurand, L. Bourdet, H. Bohuslavskyi, A. Corna, D. Kotekar-Patil, S. Barraud, X. Jehl, Y. -M. Niquet, M. Sanquer, M. Vinet

Abstract: We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by… ▽ More We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology. △ Less

Submitted 17 December, 2019; originally announced December 2019.

Comments: 4 pages, 13 figures, Invited contribution at IEDM 2016

Journal ref: 2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4

Coulomb blockade in Etched Single and Few Layer MoS2 Nanoribbons

Authors: Dharmraj Kotekar-Patil, Jie Deng, Swee Liang Wong, Kuan Eng Johnson Goh

Abstract: Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low temperature electron transport through etched 50-70nm MoS2 nanoribbons showing current oscillations as a function of gate voltage. On further investigations current through the device forms diamond shaped domains as… ▽ More Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low temperature electron transport through etched 50-70nm MoS2 nanoribbons showing current oscillations as a function of gate voltage. On further investigations current through the device forms diamond shaped domains as a function of source-drain and gate voltage. We associate these current oscillations and diamond shaped current domains with Coulomb blockade due to single electron tunneling through a quantum dot formed in the MoS2 nanoribbon. From the size of the Coulomb diamond, we estimate the quantum dot size as small as 10-35nm. We discuss the possible origins of quantum dot in our nanoribbon device and prospects to control or engineer the quantum dot in such etched MoS2 nanoribbons which can be a promising platform for spin-valley qubits in two-dimensional transition metal dichalcogenides. △ Less

Submitted 15 April, 2019; originally announced April 2019.

Comments: 19 pages, 4 figures

Single layer MoS2 nanoribbon field effect transistor

Authors: D. Kotekar-Patil, J. Deng, S. L. Wong, Chit Siong Lau, Kuan Eng Johnson Goh

Abstract: We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high curr… ▽ More We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high current density of 38 uA/um resulting in high on/off ratio of the order of 10^5. We observe mobility reaching as high as 50 cm^2/V.s with increasing source-drain bias. △ Less

Submitted 4 November, 2018; originally announced November 2018.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 114, 013508 (2019)

Electrical spin driving by $g$-matrix modulation in spin-orbit qubits

Authors: Alessandro Crippa, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi

Abstract: In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-… ▽ More In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-voltage dependence and anisotropy of the hole $g$-factors. We show that a $g$-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the $g$ factors, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits. △ Less

Submitted 4 April, 2018; v1 submitted 24 October, 2017; originally announced October 2017.

Comments: Letter format (4 pages, 4 figures). Detailed theory in Supplemenatl Material

Journal ref: Phys. Rev. Lett. 120, 137702 (2018)

Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot

Authors: Andrea Corna, Léo Bourdet, Romain Maurand, Alessandro Crippa, Dharmraj Kotekar-Patil, Heorhii Bohuslavskyi, Romain Lavieville, Louis Hutin, Sylvain Barraud, Xavier Jehl, Maud Vinet, Silvano De Franceschi, Yann-Michel Niquet, Marc Sanquer

Abstract: The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC.… ▽ More The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC. Here we report an experimental realization of electrically driven electron-spin resonance in a silicon-on-insulator (SOI) nanowire quantum dot device. The underlying driving mechanism results from an interplay between SOC and the multi-valley structure of the silicon conduction band, which is enhanced in the investigated nanowire geometry. We present a simple model capturing the essential physics and use tight-binding simulations for a more quantitative analysis. We discuss the relevance of our findings to the development of compact and scalable electron-spin qubits in silicon. △ Less

Submitted 7 February, 2018; v1 submitted 9 August, 2017; originally announced August 2017.

Journal ref: npj Quantum Information, 4(1), 6 (2018)

Ballistic quantum transport through Ge/Si core/shell nanowires

Authors: D. Kotekar-Patil, B. -M. Nguyen, J. Yoo, S. A. Dayeh, S. M. Frolov

Abstract: We study ballistic hole transport through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-P$\acute{e}$rot interference patterns as well as conductance plateaus at integer multiples of 2e$^2$/h at zero magnetic field. Magnetic field evolution of these plateaus reveals large effective Land$\acute{e}$ g-factors. Ballistic effects are observed in nanowires with silicon shell thickness… ▽ More We study ballistic hole transport through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-P$\acute{e}$rot interference patterns as well as conductance plateaus at integer multiples of 2e$^2$/h at zero magnetic field. Magnetic field evolution of these plateaus reveals large effective Land$\acute{e}$ g-factors. Ballistic effects are observed in nanowires with silicon shell thicknesses of 1 - 3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic subband-resolved transport. △ Less

Submitted 26 May, 2017; v1 submitted 8 November, 2016; originally announced November 2016.

Comments: 8 pages, 4 figures

Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry

Authors: Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, Andrea Corna, Heorhii Bohuslavskyi, Alexei O. Orlov, Patrick Fay, Romain Laviéville, Silvain Barraud, Maud Vinet, Marc Sanquer, Silvano De Franceschi, Xavier Jehl

Abstract: We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Char… ▽ More We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Charge transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio-frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of charge transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot. △ Less

Submitted 19 January, 2017; v1 submitted 12 October, 2016; originally announced October 2016.

Comments: 7 pages, 4 figures

Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction

Authors: Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand, Andrea Corna, Sylvain Barraud, Leo Bourdet, Louis Hutin, Yann-Michel Niquet, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Marc Sanquer

Abstract: We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHzきろへるつ… ▽ More We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHzきろへるつ for the first holes, an important step towards a robust hole spin-orbit qubit. △ Less

Submitted 22 September, 2016; v1 submitted 1 July, 2016; originally announced July 2016.

Pauli spin blockade in CMOS double quantum dot devices

Authors: D. Kotekar-Patil, A. Corna, R. Maurand, A. Crippa, A. Orlov, S. Barraud, X. Jehl, S. De Franceschi, M. Sanquer

Abstract: Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as… ▽ More Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T. △ Less

Submitted 24 April, 2017; v1 submitted 19 June, 2016; originally announced June 2016.

Comments: 5 pages , 4 figures

Journal ref: Phys. Status Solidi B, 254: n/a, 1600581 (2017)

Discrete Charging in Polysilicon Gates of Single Electron Transistors

Authors: Dharmraj Kotekar-Patil, Stefan Jauerneck, David Wharam, Dieter Kern, Xavier Jehl, Romain Wacquez, M. Sanquer

Abstract: Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged isla… ▽ More Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands in the polysilicon gates. △ Less

Submitted 6 January, 2014; originally announced January 2014.

Comments: 7 pages, 4 figures

Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

Authors: Enrico Prati, Marco De Michielis, Matteo Belli, Simone Cocco, Marco Fanciulli, Dharmraj Kotekar-Patil, Matthias Ruoff, Dieter P. Kern, David A. Wharam, Arjan Verduijn, Giuseppe Tettamanzi, Sven Rogge, Benoit Roche, Romain Wacquez, Xavier Jehl, Maud Vinet, Marc Sanquer

Abstract: We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electr… ▽ More We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices. △ Less

Submitted 20 March, 2012; originally announced March 2012.

Comments: 4 Figures