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Ultralong-term high-density data storage with atomic defects in SiC
Authors:
M. Hollenbach,
C. Kasper,
D. Erb,
L. Bischoff,
G. Hlawacek,
H. Kraus,
W. Kada,
T. Ohshima,
M. Helm,
S. Facsko,
V. Dyakonov,
G. V. Astakhov
Abstract:
There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we…
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There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.
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Submitted 28 October, 2023;
originally announced October 2023.
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Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors
Authors:
Chelsea Q. Xia,
Jiali Peng,
Samuel Poncé,
Jay B. Patel,
Adam D. Wright,
Timothy W. Crothers,
Mathias Uller Rothmann,
Juliane Borchert,
Rebecca L. Milot,
Hans Kraus,
Qianqian Lin,
Feliciano Giustino,
Laura M. Herz,
Michael B. Johnston
Abstract:
Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior electrical mobilities and longer diffusion lengths. Here we show that the electrical performance of polycrystalline films of metal-halide perovskites (MHPs) approaches that of singl…
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Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior electrical mobilities and longer diffusion lengths. Here we show that the electrical performance of polycrystalline films of metal-halide perovskites (MHPs) approaches that of single crystals at room temperature. Combining temperature-dependent terahertz conductivity measurements and ab initio calculations we uncover a complete picture of the origins of charge scattering in single crystals and polycrystalline films of CH$_3$NH$_3$PbI$_3$. We show that Fröhlich scattering of charge carriers with multiple phonon modes is the dominant mechanism limiting mobility, with grain-boundary scattering further reducing mobility in polycrystalline films. We reconcile the large discrepancy in charge diffusion lengths between single crystals and films by considering photon reabsorption. Thus, polycrystalline films of MHPs offer great promise for devices beyond solar cells, including transistors and modulators.
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Submitted 10 September, 2021;
originally announced September 2021.
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Influence of irradiation on defect spin coherence in silicon carbide
Authors:
C. Kasper,
D. Klenkert,
Z. Shang,
D. Simin,
A. Sperlich,
H. Kraus,
C. Schneider,
S. Zhou,
M. Trupke,
W. Kada,
T. Ohshima,
V. Dyakonov,
G. V. Astakhov
Abstract:
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of…
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Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time ($T_1$) and spin coherence time ($T_2$) of silicon vacancies in 4H-SiC created by neutron, electron and proton irradiation in a broad range of fluences. We also examine the effect of irradiation energy and sample annealing. We establish a robustness of the $T_1$ time against all types of irradiation and reveal a universal scaling of the $T_2$ time with the emitter density. Our results can be used to optimize the coherence properties of silicon vacancy qubits in SiC for specific tasks.
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Submitted 19 August, 2019;
originally announced August 2019.
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OLEDs as models for bird magnetoception: detecting electron spin resonance in geomagnetic fields
Authors:
Tobias Grünbaum,
Sebastian Milster,
Hermann Kraus,
Wolfram Ratzke,
Simon Kurrmann,
Viola Zeller,
Sebastian Bange,
Christoph Boehme,
John M. Lupton
Abstract:
Certain species of living creatures are known to orientate themselves in the geomagnetic field. Given the small magnitude of approximately 48 μT, the underlying quantum mechanical phenomena are expected to exhibit coherence times approaching the millisecond regime. In this contribution, we show sensitivity of organic light-emitting diodes (OLEDs) to magnetic fields far below Earth's magnetic field…
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Certain species of living creatures are known to orientate themselves in the geomagnetic field. Given the small magnitude of approximately 48 μT, the underlying quantum mechanical phenomena are expected to exhibit coherence times approaching the millisecond regime. In this contribution, we show sensitivity of organic light-emitting diodes (OLEDs) to magnetic fields far below Earth's magnetic field, suggesting that coherence times of the spins of charge-carrier pairs in these devices can be similarly long. By electron paramagnetic resonance (EPR) experiments, a lower bound for the coherence time can be assessed directly. Moreover, this technique offers the possibility to determine the distribution of hyperfine fields within the organic semiconductor layer. We extend this technique to a material system exhibiting both fluorescence and phosphorescence, demonstrating stable anticorrelation between optically detected magnetic resonance (ODMR) spectra in the singlet (fluorescence) and triplet (phosphorescence) channel. The experiments demonstrate the extreme sensitivity of OLEDs to both static as well as dynamic magnetic fields and suggest that coherent spin precession processes of Coulombically bound electron spin pairs may play a crucial role in the magnetoreceptive ability of living creatures.
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Submitted 7 June, 2019;
originally announced June 2019.
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Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission
Authors:
M. Fischer,
A. Sperlich,
H. Kraus,
T. Ohshima,
G. V. Astakhov,
V. Dyakonov
Abstract:
We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally…
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We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.
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Submitted 31 August, 2017;
originally announced September 2017.
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Locking of electron spin coherence over fifty milliseconds in natural silicon carbide
Authors:
D. Simin,
H. Kraus,
A. Sperlich,
T. Ohshima,
G. V. Astakhov,
V. Dyakonov
Abstract:
We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced decoherence rate is attained through the suppression of heteronuclear spin cross-talking by applying a moderate magnetic field in combination with dynamic decou…
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We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced decoherence rate is attained through the suppression of heteronuclear spin cross-talking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. We identify several phonon-assisted mechanisms of spin-lattice relaxation, ultimately limiting quantum coherence, and find that it can be extremely long at cryogenic temperature, equal or even longer than 8 seconds. Our approach may be extended to other polyatomic compounds and open a path towards improved qubit memory for wafer-scale quantum techmologies.
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Submitted 10 November, 2016; v1 submitted 18 February, 2016;
originally announced February 2016.
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Studies of scintillation properties of CaMoO4 at millikelvin temperatures
Authors:
X. Zhang,
J. Lin,
V. B. Mikhailik,
H. Kraus
Abstract:
Application of CaMoO4 as a scintillation target in cryogenic rare event searches relies on the understanding of scintillation properties of the material at the temperatures at which these detectors operate. We devised and implemented a detection module with a low-temperature photomultiplier from Hamamatsu (model R8520-06) powered by a Cockcroft-Walton generator. The detector module containing the…
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Application of CaMoO4 as a scintillation target in cryogenic rare event searches relies on the understanding of scintillation properties of the material at the temperatures at which these detectors operate. We devised and implemented a detection module with a low-temperature photomultiplier from Hamamatsu (model R8520-06) powered by a Cockcroft-Walton generator. The detector module containing the CaMoO4 crystal was placed in a 3He/4He dilution refrigerator and used to measure scintillation characteristics of CaMoO4 in the millikelvin temperature range. At the lowest temperature achieved, the energy resolution of CaMoO4 for 122 keV from a 57Co source is found to be 30% (FWHM), and the fast and slow decay constants are 40.6+-0.8 us and 3410+-50 us, respectively. The temperature variation of the CaMoO4 decay kinetics is discussed in terms of a three-level model of the emission center
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Submitted 13 June, 2015;
originally announced June 2015.
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High precision vector magnetometry with uniaxial quantum centers in silicon carbide
Authors:
D. Simin,
F. Fuchs,
H. Kraus,
A. Sperlich,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agre…
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We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agreement between the experimental and calculated spin resonance spectra without any fitting parameters, providing angle resolution of a few degrees in the magnetic field range up to several millitesla. Our approach is suitable for ensembles as well as for single spin-3/2 color centers, allowing for vector magnetometry on the nanoscale at ambient conditions.
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Submitted 1 May, 2015;
originally announced May 2015.
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Luminescence and scintillation properties of CsI -- a potential cryogenic scintillator
Authors:
V. B. Mikhailik,
V. Kapustyanyk,
V. Tsybulskyi,
V. Rudyk,
H. Kraus
Abstract:
Caesium iodide is one of the more extensively studied scintillators. Here we present X-ray luminescence spectra, scintillation light output and decay curves as function of temperature, from room temperature down to below 10 K. Features of the observed intrinsic luminescence are explained in terms of radiative recombination of on- and off-centre STE. A model permitting interpretation of the dynamic…
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Caesium iodide is one of the more extensively studied scintillators. Here we present X-ray luminescence spectra, scintillation light output and decay curves as function of temperature, from room temperature down to below 10 K. Features of the observed intrinsic luminescence are explained in terms of radiative recombination of on- and off-centre STE. A model permitting interpretation of the dynamics of luminescence changes in CsI with temperature is suggested. This model includes adiabatic potential energy surfaces (APES) associated with singlet and triplet states of self-trapped excitons (STE) and explains the variation of the luminescence spectra with temperature as a result of re-distribution in the population between on- and off-centre STE. The temperature dependence of the scintillation light yield is discussed in the framework of the Onsager mechanism.
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Submitted 23 November, 2014;
originally announced November 2014.
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Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
Authors:
H. Kraus,
V. A. Soltamov,
F. Fuchs,
D. Simin,
A. Sperlich,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2…
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Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of -1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.
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Submitted 30 March, 2014;
originally announced March 2014.
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Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
Authors:
D. Riedel,
F. Fuchs,
H. Kraus,
S. Vaeth,
A. Sperlich,
V. Dyakonov,
A. A. Soltamova,
P. G. Baranov,
V. A. Ilyin,
G. V. Astakhov
Abstract:
Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quan…
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Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.
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Submitted 1 October, 2012;
originally announced October 2012.
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Observation of bi-polarons in blends of conjugated copolymers and fullerene derivatives
Authors:
Tom J. Savenije,
Andreas Sperlich,
Hannes Kraus,
Oleg G. Poluektov,
Martin Heeney,
Vladimir Dyakonov
Abstract:
From a fundamental and application point of view it is of importance to understand how charge carrier generation and transport in a conjugated polymer (CP):fullerene blend are affected by the blend morphology. In this work light-induced electron spin resonance (LESR) spectra and transient ESR response signals are recorded on non-annealed and annealed blend layers consisting of alkyl substituted th…
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From a fundamental and application point of view it is of importance to understand how charge carrier generation and transport in a conjugated polymer (CP):fullerene blend are affected by the blend morphology. In this work light-induced electron spin resonance (LESR) spectra and transient ESR response signals are recorded on non-annealed and annealed blend layers consisting of alkyl substituted thieno[3,2-b]thiophene copolymers (pATBT) and the soluble fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) at temperatures ranging from 10 to 180 K. Annealing of the blend sample leads to a reduction of the steady state concentration of light-induced PCBM anions within the blend at low temperatures (T = 10 K) and continuous illumination. This is explained on the basis of the reducing interfacial area of the blend composite on annealing, and the high activation energy for electron diffusion in PCBM blends leading to trapped electrons near the interface with the CP. As a consequence, these trapped electrons block consecutive electron transfer from an exciton on a CP to the PCBM domain, resulting in a relatively low concentration charge carriers in the annealed blend. Analysis of the transient ESR data allows us to conclude that in annealed samples diamagnetic bi-polaronic states on the CPs are generated at low temperature. The formation of these states is related to the generation and interaction of multiple positive polarons in the large crystalline polymer domains present in the annealed sample.
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Submitted 9 October, 2011;
originally announced October 2011.
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Reversible and Irreversible Interactions of Poly(3-hexylthiophene) with Oxygen Studied by Spin-Sensitive Methods
Authors:
Andreas Sperlich,
Hannes Kraus,
Carsten Deibel,
Hubert Blok,
Jan Schmidt,
Vladimir Dyakonov
Abstract:
Understanding of degradation mechanisms in polymer:fullerene bulk-heterojunctions on the microscopic level aimed at improving their intrinsic stability is crucial for the breakthrough of organic photovoltaics. These materials are vulnerable to exposure to light and/or oxygen, hence they involve electronic excitations. To unambiguously probe the excited states of various multiplicities and their re…
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Understanding of degradation mechanisms in polymer:fullerene bulk-heterojunctions on the microscopic level aimed at improving their intrinsic stability is crucial for the breakthrough of organic photovoltaics. These materials are vulnerable to exposure to light and/or oxygen, hence they involve electronic excitations. To unambiguously probe the excited states of various multiplicities and their reactions with oxygen, we applied combined magneto-optical methods based on multifrequency (9 and 275 GHz) electron paramagnetic resonance (EPR), photoluminescence (PL), and PL-detected magnetic resonance (PLDMR) to the conjugated polymer poly(3-hexylthiophene) (P3HT) and polymer:fullerene bulk heterojunctions (P3HT:PCBM; PCBM = [6,6]-phenyl-C61-butyric acid methyl ester). We identified two distinct photochemical reaction routes, one being fully reversible and related to the formation of polymer:oxygen charge transfer complexes, the other one, irreversible, being related to the formation of singlet oxygen under participation of bound triplet excitons on the polymer chain. With respect to the blends, we discuss the protective effect of the methanofullerenes on the conjugated polymer bypassing the triplet exciton generation.
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Submitted 30 December, 2011; v1 submitted 6 October, 2011;
originally announced October 2011.
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Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes
Authors:
Moritz Liedtke,
Andreas Sperlich,
Hannes Kraus,
Andreas Baumann,
Carsten Deibel,
Maarten J. M. Wirix,
Joachim Loos,
Claudia M. Cardona,
Vladimir Dyakonov
Abstract:
Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallic nitride endohedral fullerene 1-[3-(2-ethyl)hexoxy carbonyl]propyl-1-phenyl-Lu3N@C80 (Lu3N@C80-PCBEH) show an open circuit voltage (VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acid methyl ester (PC61BM). To fully exploit the potential of this acceptor molecule with respect to the power conversio…
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Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallic nitride endohedral fullerene 1-[3-(2-ethyl)hexoxy carbonyl]propyl-1-phenyl-Lu3N@C80 (Lu3N@C80-PCBEH) show an open circuit voltage (VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acid methyl ester (PC61BM). To fully exploit the potential of this acceptor molecule with respect to the power conversion efficiency (PCE) of solar cells, the short circuit current (JSC) should be improved to become competitive with the state of the art solar cells. Here, we address factors influencing the JSC in blends containing the high voltage absorber Lu3N@C80-PCBEH in view of both photogeneration but also transport and extraction of charge carriers. We apply optical, charge carrier extraction, morphology, and spin-sensitive techniques. In blends containing Lu3N@C80-PCBEH, we found 2 times weaker photoluminescence quenching, remainders of interchain excitons, and, most remarkably, triplet excitons formed on the polymer chain, which were absent in the reference P3HT:PC61BM blends. We show that electron back transfer to the triplet state along with the lower exciton dissociation yield due to intramolecular charge transfer in Lu3N@C80-PCBEH are responsible for the reduced photocurrent.
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Submitted 18 July, 2011;
originally announced July 2011.
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Photoinduced C70 radical anions in polymer:fullerene blends
Authors:
Andreas Sperlich,
Moritz Liedtke,
Julia Kern,
Hannes Kraus,
Carsten Deibel,
Salvatore Filippone,
Juan Luis Delgado,
Nazario Martín,
Vladimir Dyakonov
Abstract:
Photoinduced polarons in solid films of polymer-fullerene blends were studied by photoluminescence (PL), photoinduced absorption (PIA) and electron spin resonance (ESR). The donor materials used were P3HT and MEH-PPV. As acceptors we employed PC60BM as reference and various soluble C70-derivates: PC70BM, two different diphenylmethano-[70]fullerene oligoether (C70-DPM-OE) and two dimers, C70-C70 an…
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Photoinduced polarons in solid films of polymer-fullerene blends were studied by photoluminescence (PL), photoinduced absorption (PIA) and electron spin resonance (ESR). The donor materials used were P3HT and MEH-PPV. As acceptors we employed PC60BM as reference and various soluble C70-derivates: PC70BM, two different diphenylmethano-[70]fullerene oligoether (C70-DPM-OE) and two dimers, C70-C70 and C60-C70. Blend films containing C70 revealed characteristic spectroscopic signatures not seen with C60. Light-induced ESR showed signals at g\geq2.005, assigned to an electron localized on the C70 cage. The formation of C70 radical anions also leads to a subgap PIA band at 0.92 eV, hidden in the spectra of C70-based P3HT and MEH-PPV blends, which allows for more exact studies of charge separated states in conjugated polymer:C70 blends.
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Submitted 9 February, 2011;
originally announced February 2011.
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Spectroscopic Signatures of Photogenerated Radical Anions in Polymer-[C70]Fullerene Bulk Heterojunctions
Authors:
M. Liedtke,
A. Sperlich,
H. Kraus,
C. Deibel,
V. Dyakonov,
S. Filippone,
J. L. Delgado,
N. Martin,
O. G. Poluektov
Abstract:
Light induced polarons in solid films of polymer-fullerene blends were studied by applying photoluminescence (PL), photo induced absorption (PIA) techniques as well as electron spin resonance (ESR). The materials used were poly(3-hexylthiophene) (P3HT) and poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene] (MEH-PPV) as donors. As acceptors we used [6,6]-phenyl-C61-butyric acid methyl ester…
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Light induced polarons in solid films of polymer-fullerene blends were studied by applying photoluminescence (PL), photo induced absorption (PIA) techniques as well as electron spin resonance (ESR). The materials used were poly(3-hexylthiophene) (P3HT) and poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene] (MEH-PPV) as donors. As acceptors we used [6,6]-phenyl-C61-butyric acid methyl ester ([C60]PCBM) and various soluble C70-derivates: [C70]PCBM, diphenylmethano[70]fullerene oligoether (C70-DPM-OE), C70-DPM-OE2, and two fullerene dimers, C70-C70 and C60-C70 (all shown in figure 1). In all blends containing C70 we found typical signatures which were absent if [C60]PCBM was used as acceptor. Light-induced ESR revealed signals at g>=2.005, which we previously assigned to an electron localized on the C70 cage, the PIA measurements showed a new sub-bandgap absorption band at 0.92 eV, which we correspondingly ascribe to C70 radical anions formed in the course of photoinduced electron transfer from donor to acceptor.
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Submitted 9 July, 2010;
originally announced July 2010.
