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Well-defined sub-nanometer graphene ribbons synthesized inside carbon nanotubes
Authors:
Hans Kuzmany,
Lei Shi,
Miles Martinati,
Sofie Cambré,
Wim Wenseleers,
Jenő Kürti,
János Koltai,
Gergő Kukucska,
Kecheng Cao,
Ute Kaiser,
Takeshi Saito,
Thomas Pichler
Abstract:
Graphene nanoribbons with sub-nanometer widths are extremely interesting for nanoscale electronics and devices as they combine the unusual transport properties of graphene with the opening of a band gap due to quantum confinement in the lateral dimension. Strong research efforts are presently paid to grow such nanoribbons. Here we show the synthesis of 6- and 7-armchair graphene nanoribbons, with…
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Graphene nanoribbons with sub-nanometer widths are extremely interesting for nanoscale electronics and devices as they combine the unusual transport properties of graphene with the opening of a band gap due to quantum confinement in the lateral dimension. Strong research efforts are presently paid to grow such nanoribbons. Here we show the synthesis of 6- and 7-armchair graphene nanoribbons, with widths of 0.61 and 0.74 nm, and excitonic gaps of 1.83 and 2.18 eV, by high-temperature vacuum annealing of ferrocene molecules inside single-walled carbon nanotubes. The encapsulation of the so-obtained graphene nanoribbons is proved by atomic resolution electron microscopy, while their assignment is provided by a combination of an extensive wavelength-dependent Raman scattering characterization and quantum-chemical calculations. These findings enable a facile and scalable approach leading to the controlled growth and detailed analysis of well-defined sub-nanometer graphene nanoribbons.
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Submitted 31 August, 2020; v1 submitted 23 June, 2020;
originally announced June 2020.
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Signature of large-gap quantum spin Hall state in the layered mineral jacutingaite
Authors:
Konrád Kandrai,
Gergő Kukucska,
Péter Vancsó,
János Koltai,
György Baranka,
Zsolt E. Horváth,
Ákos Hoffmann,
Anna Vymazalová,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
Quantum spin Hall (QSH) insulators are materials that feature an insulating bulk and host edge states protected by time-reversal symmetry. The helical locking of spin and momentum in these states suppresses backscattering of charge carriers, promising applications from low-power electronics to quantum computing. A major challenge for applications is the identification of large gap QSH materials, w…
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Quantum spin Hall (QSH) insulators are materials that feature an insulating bulk and host edge states protected by time-reversal symmetry. The helical locking of spin and momentum in these states suppresses backscattering of charge carriers, promising applications from low-power electronics to quantum computing. A major challenge for applications is the identification of large gap QSH materials, which would enable room temperature dissipationless transport in their edge states. Here we show that the layered mineral jacutingaite (Pt$_2$HgSe$_3$) is a candidate QSH material, realizing the long sought after the Kane-Mele insulator. Using scanning tunneling microscopy, we measure a band gap of 110 meV, above room temperature, and identify the hallmark edge states. By calculating the $\mathbb{Z}_2$ invariant, we confirm the topological nature of the gap. Being a layered mineral, it is stable in air and can be thinned down to a few atomic layers by mechanical exfoliation. Furthermore, we demonstrate that it can be integrated into heterostructures with other two-dimensional materials. This adds a topological insulator to the 2D quantum material library, greatly expanding the possibilities for tuning 2D electron systems using stacks of layered materials.
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Submitted 19 June, 2020; v1 submitted 6 March, 2019;
originally announced March 2019.
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Frequency-dependent ab initio Resonance Raman Spectroscopy
Authors:
Gergő Kukucska,
Viktor Zólyomi,
János Koltai
Abstract:
We present a new method to compute resonance Raman spectra based on ab initio level calculations using the frequency-dependent Placzek approximation. We illustrate the efficiency of our hybrid quantum-classical method by calculating the Raman spectra of several materials with different crystal structures. Results obtained from our approach agree very well with experimental data in the literature.…
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We present a new method to compute resonance Raman spectra based on ab initio level calculations using the frequency-dependent Placzek approximation. We illustrate the efficiency of our hybrid quantum-classical method by calculating the Raman spectra of several materials with different crystal structures. Results obtained from our approach agree very well with experimental data in the literature. We argue that our method offers an affordable and far more accurate alternative to the widely used static Placzek approximation.
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Submitted 8 April, 2019; v1 submitted 1 March, 2019;
originally announced March 2019.
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Magic number theory of superconducting proximity effects and Wigner delay times in graphene-like molecules
Authors:
Péter Rakyta,
Asma Alanazy,
Andor Kormányos,
Zoltán Tajkov,
Gergely Kukucska,
János Koltai,
Sara Sangtarash,
Hatef Sadeghi,
József Cserti,
Colin J. Lambert
Abstract:
When a single molecule is connected to external electrodes by linker groups, the connectivity of the linkers to the molecular core can be controlled to atomic precision by appropriate chemical synthesis. Recently, the connectivity dependence of the electrical conductance and Seebeck coefficient of single molecules has been investigated both theoretically and experimentally. Here we study the conne…
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When a single molecule is connected to external electrodes by linker groups, the connectivity of the linkers to the molecular core can be controlled to atomic precision by appropriate chemical synthesis. Recently, the connectivity dependence of the electrical conductance and Seebeck coefficient of single molecules has been investigated both theoretically and experimentally. Here we study the connectivity dependence of the Wigner delay time of single-molecule junctions and the connectivity dependence of superconducting proximity effects, which occur when the external electrodes are replaced by superconductors. Although absolute values of transport properties depend on complex and often uncontrolled details of the coupling between the molecule and electrodes, we demonstrate that ratios of transport properties can be predicted using tables of 'magic numbers,' which capture the connectivity dependence of superconducting proximity effects and Wigner delay times within molecules. These numbers are calculated easily, without the need for large-scale computations. For normal-molecule-superconducting junctions, we find that the electrical conductance is proportional to the fourth power of their magic numbers, whereas for superconducting-molecule-superconducting junctions, the critical current is proportional to the square of their magic numbers. For more conventional normal-molecule-normal junctions, we demonstrate that delay time ratios can be obtained from products of magic number tables.
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Submitted 28 March, 2019; v1 submitted 23 November, 2018;
originally announced November 2018.
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Resonance Raman spectroscopy of silicene and germanene
Authors:
Gergő Kukucska,
Viktor Zólyomi,
János Koltai
Abstract:
We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1 and 3$\,$eV using a newly developed third-nearest neighbour tight-binding model parametrized from first principles density functional theory. We identify featu…
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We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1 and 3$\,$eV using a newly developed third-nearest neighbour tight-binding model parametrized from first principles density functional theory. We identify features in the Raman spectra that are unique to the studied materials or the defects therein. We find that in silicene, a new Raman resonance arises from the $2.77\,\rm$eV $π-σ$ plasmon at the M point, measurably higher than the Raman resonance originating from the $2.12\,\rm$eV $π$ plasmon energy. We show that in germanene, the lifetimes of charge carriers, and thereby the linewidths of the Raman peaks, are influenced by spin-orbit splittings within the electronic structure. We use our model to predict scattering cross sections for defect induced Raman scattering involving adatoms, substitutional impurities, Stone-Wales pairs, and vacancies, and argue that the presence of each of these defects in silicene and germanene can be qualitatively matched to specific features in the Raman response.
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Submitted 3 January, 2019; v1 submitted 3 August, 2018;
originally announced August 2018.
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Large intravalley scattering due to pseudo-magnetic fields in crumpled graphene
Authors:
Péter Kun,
Gergő Kukucska,
Gergely Dobrik,
János Koltai,
Jenő Kürti,
László P. Biró,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
The pseudo-magnetic field generated by mechanical strain in graphene can have dramatic consequences on the behavior of electrons and holes. Here we show that pseudo-magnetic field fluctuations present in crumpled graphene can induce significant intravalley scattering of charge carriers. We detect this by measuring the confocal Raman spectra of crumpled areas, where we observe an increase of the D'…
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The pseudo-magnetic field generated by mechanical strain in graphene can have dramatic consequences on the behavior of electrons and holes. Here we show that pseudo-magnetic field fluctuations present in crumpled graphene can induce significant intravalley scattering of charge carriers. We detect this by measuring the confocal Raman spectra of crumpled areas, where we observe an increase of the D'/D peak intensity ratio by up to a factor of 300. We reproduce our observations by numerical calculation of the double resonant Raman spectra and interpret the results as experimental evidence of the phase shift suffered by Dirac charge carriers in the presence of a pseudo-magnetic field. This lifts the restriction on complete intravalley backscattering of Dirac fermions.
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Submitted 26 February, 2019; v1 submitted 26 January, 2018;
originally announced January 2018.
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Preparing local strain patterns in graphene by atomic force microscope based indentation
Authors:
Péter Nemes-Incze,
Gergő Kukucska,
János Koltai,
Jenő Kürti,
Chanyong Hwang,
Levente Tapasztó,
László P. Biró
Abstract:
Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared device…
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Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared devices. To engineer the properties of graphene via mechanical deformation, versatile new techniques are needed to pattern strain profiles in a controlled manner. Here we present a process by which strain can be created in substrate supported graphene layers. Our atomic force microscope-based technique opens up new possibilities in tailoring the properties of graphene using mechanical strain.
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Submitted 8 June, 2017; v1 submitted 16 February, 2017;
originally announced February 2017.
