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Relaxation effects in twisted bilayer molybdenum disulfide: structure, stability, and electronic properties
Authors:
Florian M. Arnold,
Alireza Ghasemifard,
Agnieszka Kuc,
Jens Kunstmann,
Thomas Heine
Abstract:
Manipulating the interlayer twist angle is a powerful tool to tailor the properties of layered two-dimensional crystals. The twist angle has a determinant impact on these systems' atomistic structure and electronic properties. This includes the corrugation of individual layers, formation of stacking domains and other structural elements, and electronic structure changes due to the atomic reconstru…
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Manipulating the interlayer twist angle is a powerful tool to tailor the properties of layered two-dimensional crystals. The twist angle has a determinant impact on these systems' atomistic structure and electronic properties. This includes the corrugation of individual layers, formation of stacking domains and other structural elements, and electronic structure changes due to the atomic reconstruction and superlattice effects. However, how these properties change with the twist angle (ta) is not yet well understood. Here, we monitor the change of twisted bilayer MoS2 characteristics as function of ta. We identify distinct structural regimes, with particular structural and electronic properties. We employ a hierarchical approach ranging from a reactive force field through the density-functional-based tight-binding approach and density-functional theory. To obtain a comprehensive overview, we analyzed a large number of twisted bilayers with twist angles in the range 0.2-59.6deg. Some systems include up to half a million atoms, making structure optimization and electronic property calculation challenging. For 13<ta<47, the structure is well-described by a moiré regime composed of two rigidly twisted monolayers. At small ta (ta<3 and 57<ta), a domain-soliton regime evolves, where the structure contains large triangular stacking domains, separated by a network of strain solitons and short-ranged high-energy nodes. The corrugation of the layers and the emerging superlattice of solitons and stacking domains affects the electronic structure. Emerging predominant characteristic features are Dirac cones at K and kagome bands. These features flatten for ta approaching 0 and 60deg. Our results show at which ta range the characteristic features of the reconstruction emerge and give rise to exciting electronics. We expect our findings also to be relevant for other twisted bilayer systems.
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Submitted 20 September, 2023; v1 submitted 12 June, 2023;
originally announced June 2023.
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Tuning valleys and wave functions of van der Waals heterostructures by varying the number of layers: A first-principles study
Authors:
Muhammad S. Ramzan,
Jens Kunstmann,
Agnieszka B. Kuc
Abstract:
In van der Waals heterostructures of two-dimensional transition-metal dichalcogenides (2D TMDCs) electron and hole states are spatially localized in different layers forming long-lived interlayer excitons. Here, we have investigated, from first principles, the influence of additional electron or hole layers on the electronic properties of a MoS2/WSe2 heterobilayer (HBL), which is a direct band gap…
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In van der Waals heterostructures of two-dimensional transition-metal dichalcogenides (2D TMDCs) electron and hole states are spatially localized in different layers forming long-lived interlayer excitons. Here, we have investigated, from first principles, the influence of additional electron or hole layers on the electronic properties of a MoS2/WSe2 heterobilayer (HBL), which is a direct band gap material. Additional layers modify the interlayer hybridization, mostly affecting the quasiparticle energy and real-space extend of hole states at the G and electron states at the Q valleys. For a sufficient number of additional layers, the band edges move from K to Q or G, respectively. Adding electron layers to the HBL leads to more delocalized Q states, while G states do not extend much beyond the HBL, even when more hole layers are added. These results suggest a simple and yet powerful way to tune band edges and the real-space extend of the electron and hole wave function in TMDC heterostructures, strongly affecting the lifetime and dynamics of interlayer excitons.
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Submitted 2 November, 2020;
originally announced November 2020.
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Large exciton binding energies in MnPS$_3$ as a case study of vdW layered magnet
Authors:
Magdalena Birowska,
Paulo E. Faria Junior,
Jaroslav Fabian,
Jens Kunstmann
Abstract:
Stable excitons in semiconductor monolayers such as transition-metal dichalcogenides (TMDCs) enable and motivate fundamental research as well as the development of room-temperature optoelectronics applications. The newly discovered layered magnetic materials present a unique opportunity to integrate optical functionalities with magnetism. We predict that a large class of antiferromagnetic semicond…
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Stable excitons in semiconductor monolayers such as transition-metal dichalcogenides (TMDCs) enable and motivate fundamental research as well as the development of room-temperature optoelectronics applications. The newly discovered layered magnetic materials present a unique opportunity to integrate optical functionalities with magnetism. We predict that a large class of antiferromagnetic semiconducting monolayers of the MPX$_3$ family exhibit giant excitonic binding energies, making them suitable platforms for magneto-optical investigations and optospintronics applications. Indeed, our investigations, based on first principles methods combined with an effective-model Bethe-Salpeter solver, show that excitons in bare Neel-MnPS$_3$ are bound by more than 1 eV, which is twice the excitonic energies in TMDCs. In addition, the antiferromagnetic ordering of monolayer samples can be inferred indirectly using different polarization of light.
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Submitted 18 February, 2021; v1 submitted 10 September, 2020;
originally announced September 2020.
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Exciton g-factors of van der Waals heterostructures from first principles calculations
Authors:
Tomasz Woźniak,
Paulo E. Faria Junior,
Gotthard Seifert,
Andrey Chaves,
Jens Kunstmann
Abstract:
External fields are a powerful tool to probe optical excitations in a material. The linear energy shift of an excitation in a magnetic field is quantified by its effective g-factor. Here we show how exciton g-factors and their sign can be determined by converged first principles calculations. We apply the method to monolayer excitons in semiconducting transition metal dichalcogenides and to interl…
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External fields are a powerful tool to probe optical excitations in a material. The linear energy shift of an excitation in a magnetic field is quantified by its effective g-factor. Here we show how exciton g-factors and their sign can be determined by converged first principles calculations. We apply the method to monolayer excitons in semiconducting transition metal dichalcogenides and to interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers and obtain good agreement with recent experimental data. The precision of our method allows to assign measured g-factors of optical peaks to specific transitions in the band structure and also to specific regions of the samples. This revealed the nature of various, previously measured interlayer exciton peaks. We further show that, due to specific optical selection rules, g-factors in van der Waals heterostructures are strongly spin- and stacking-dependent. The calculation of orbital angular momenta requires the summation over hundreds of bands, indicating that for the considered two-dimensional materials the basis set size is a critical numerical issue. The presented approach can potentially be applied to a wide variety of semiconductors.
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Submitted 26 April, 2020; v1 submitted 6 February, 2020;
originally announced February 2020.
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Thermodynamic stability of Borophene, $\mathrm{B_2O_3}$ and other $\mathrm{B_{1-x}O_x}$ sheets
Authors:
Florian M. Arnold,
Gotthard Seifert,
Jens Kunstmann
Abstract:
The recent discovery of borophene, a two-dimensional allotrope of boron, raises many questions about its structure and its chemical and physical properties. Boron has a high chemical affinity to oxygen but little is known about the oxidation behavior of borophene. Here we use first principles calculations to study the phase diagram of free-standing, two-dimensional $\mathrm{B_{1-x}O_x}$ for compos…
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The recent discovery of borophene, a two-dimensional allotrope of boron, raises many questions about its structure and its chemical and physical properties. Boron has a high chemical affinity to oxygen but little is known about the oxidation behavior of borophene. Here we use first principles calculations to study the phase diagram of free-standing, two-dimensional $\mathrm{B_{1-x}O_x}$ for compositions ranging from $x=0$ to $x=0.6$, which correspond to borophene and $\mathrm{B_2O_3}$ sheets, respectively. Our results indicate that no stable compounds except borophene and $\mathrm{B_2O_3}$ sheets exist. Intermediate compositions are heterogeneous mixtures of borophene and $\mathrm{B_2O_3}$. Other hypothetical crystals such as $\mathrm{B_2O}$ are unstable and some of them were found to undergo spontaneous disproportionation into borophene and $\mathrm{B_2O_3}$. It is also shown that oxidizing borophene inside the flakes is thermodynamically unfavorable over forming $\mathrm{B_2O_3}$ at the edges. All findings can be rationalized by oxygen's preference of two-fold coordination which is incompatible with higher in-plane coordination numbers preferred by boron. These results agree well with recent experiments and pave the way to understand the process of oxidation of borophene and other two-dimensional materials.
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Submitted 7 November, 2019;
originally announced November 2019.
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Anomalous Interlayer Exciton Diffusion in Twist-Angle-Dependent Moiré Potentials of WS$_2$-WSe$_2$ Heterobilayers
Authors:
Long Yuan,
Biyuan Zheng,
Jens Kunstmann,
Thomas Brumme,
Agnieszka Beata Kuc,
Chao Ma,
Shibin Deng,
Daria Blach,
Anlian Pan,
Libai Huang
Abstract:
The nanoscale periodic potentials introduced by moiré patterns in semiconducting van der Waals (vdW) heterostructures provide a new platform for designing exciton superlattices. To realize these applications, a thorough understanding of the localization and delocalization of interlayer excitons in the moiré potentials is necessary. Here, we investigated interlayer exciton dynamics and transport mo…
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The nanoscale periodic potentials introduced by moiré patterns in semiconducting van der Waals (vdW) heterostructures provide a new platform for designing exciton superlattices. To realize these applications, a thorough understanding of the localization and delocalization of interlayer excitons in the moiré potentials is necessary. Here, we investigated interlayer exciton dynamics and transport modulated by the moiré potentials in WS$_2$-WSe$_2$ heterobilayers in time, space, and momentum domains using transient absorption microscopy combined with first-principles calculations. Experimental results verified the theoretical prediction of energetically favorable K-Q interlayer excitons and unraveled exciton-population dynamics that was controlled by the twist-angle-dependent energy difference between the K-Q and K-K excitons. Spatially- and temporally-resolved exciton-population imaging directly visualizes exciton localization by twist-angle-dependent moiré potentials of ~100 meV. Exciton transport deviates significantly from normal diffusion due to the interplay between the moiré potentials and strong many-body interactions, leading to exciton-density- and twist-angle-dependent diffusion length. These results have important implications for designing vdW heterostructures for exciton and spin transport as well as for quantum communication applications.
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Submitted 7 October, 2019;
originally announced October 2019.
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Luminescent emission of excited Rydberg excitons from monolayer WSe2
Authors:
Shao-Yu Chen,
Zhengguang Lu,
Thomas Goldstein,
Jiayue Tong,
Andrey Chaves,
Jens Kunstmann,
L. S. R. Cavalcante,
Tomasz Woźniak,
Gotthard Seifert,
D. R. Reichman,
Takashi Taniguchi,
Kenji Watanabe,
Dmitry Smirnov,
Jun Yan
Abstract:
We report the experimental observation of radiative recombination from Rydberg excitons in a two-dimensional semiconductor, monolayer WSe2, encapsulated in hexagonal boron nitride. Excitonic emission up to the 4s excited state is directly observed in photoluminescence spectroscopy in an out-of-plane magnetic field up to 31 Tesla. We confirm the progressively larger exciton size for higher energy e…
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We report the experimental observation of radiative recombination from Rydberg excitons in a two-dimensional semiconductor, monolayer WSe2, encapsulated in hexagonal boron nitride. Excitonic emission up to the 4s excited state is directly observed in photoluminescence spectroscopy in an out-of-plane magnetic field up to 31 Tesla. We confirm the progressively larger exciton size for higher energy excited states through diamagnetic shift measurements. This also enables us to estimate the 1s exciton binding energy to be about 170 meV, which is significantly smaller than most previous reports. The Zeeman shift of the 1s to 3s states, from both luminescence and absorption measurements, exhibits a monotonic increase of g-factor, reflecting nontrivial magnetic-dipole-moment differences between ground and excited exciton states. This systematic evolution of magnetic dipole moments is theoretically explained from the spreading of the Rydberg states in momentum space.
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Submitted 17 March, 2019;
originally announced March 2019.
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Hydrogenation, dehydrogenation of $α$-tetragonal boron and its transition to $δ$-orthorhombic boron
Authors:
Naoki Uemura,
Koun Shirai,
Jens Kunstmann,
Evgeny A. Ekimov,
Yuliya B. Lebed
Abstract:
Boron bulk crystals are marked by exceptional structural complexity and unusual related physical phenomena. Recent reports of hydrogenated $α$-tetragonal and a new $δ$-orthorhombic boron B$_{52}$ phase have raised many fundamental questions. Using density functional theory calculations it is shown that hydrogenated $α$-tetragonal boron has at least two stable stoichiometric compositions, B$_{51}$H…
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Boron bulk crystals are marked by exceptional structural complexity and unusual related physical phenomena. Recent reports of hydrogenated $α$-tetragonal and a new $δ$-orthorhombic boron B$_{52}$ phase have raised many fundamental questions. Using density functional theory calculations it is shown that hydrogenated $α$-tetragonal boron has at least two stable stoichiometric compositions, B$_{51}$H$_{7}$ and B$_{51}$H$_{3}$. Thermodynamic modeling was used to qualitatively reproduce the two-step phase transition reported by Ekimov et al. [J. Mater. Res. 31, 2773 (2016)] upon annealing, which corresponds to successive transitions from B$_{51}$H$_{7}$ to B$_{51}$H$_{3}$ to pure B$_{52}$. The so obtained $δ$-orthorhombic boron is an ordered, low-temperature phase and $α$-tetragonal boron is a disordered, high-temperature phase of B$_{52}$. The two phases are connected by an order-disorder transition, that is associated with the migration of interstitial boron atoms. Atom migration is usually suppressed in strongly bound, covalent crystals. It is shown that the migration of boron atoms is likely to be assisted by the migration of hydrogen atoms upon annealing. These results are in excellent agreement with the above mentioned experiment and they represent an important step forward for the understanding of boron and hydrogenated boron crystals. They further open a new avenue to control or remove the intrinsic defects of covalently bound crystals by utilizing volatile, foreign atoms.
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Submitted 6 March, 2019;
originally announced March 2019.
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Momentum-space indirect interlayer excitons in transition metal dichalcogenide van der Waals heterostructures
Authors:
Jens Kunstmann,
Fabian Mooshammer,
Philipp Nagler,
Andrey Chaves,
Frederick Stein,
Nicola Paradiso,
Gerd Plechinger,
Christoph Strunk,
Christian Schüller,
Gotthard Seifert,
David R. Reichman,
Tobias Korn
Abstract:
Monolayers of transition metal dichalcogenides (TMDCs) feature exceptional optical properties that are dominated by excitons, tightly bound electron-hole pairs. Forming van der Waals heterostructures by deterministically stacking individual monolayers allows to tune various properties via choice of materials and relative orientation of the layers. In these structures, a new type of exciton emerges…
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Monolayers of transition metal dichalcogenides (TMDCs) feature exceptional optical properties that are dominated by excitons, tightly bound electron-hole pairs. Forming van der Waals heterostructures by deterministically stacking individual monolayers allows to tune various properties via choice of materials and relative orientation of the layers. In these structures, a new type of exciton emerges, where electron and hole are spatially separated. These interlayer excitons allow exploration of many-body quantum phenomena and are ideally suited for valleytronic applications. Mostly, a basic model of fully spatially-separated electron and hole stemming from the $K$ valleys of the monolayer Brillouin zones is applied to describe such excitons. Here, we combine photoluminescence spectroscopy and first principle calculations to expand the concept of interlayer excitons. We identify a partially charge-separated electron-hole pair in MoS$_2$/WSe$_2$ heterostructures residing at the $Γ$ and $K$ valleys. We control the emission energy of this new type of momentum-space indirect, yet strongly-bound exciton by variation of the relative orientation of the layers. These findings represent a crucial step towards the understanding and control of excitonic effects in TMDC heterostructures and devices.
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Submitted 13 March, 2018;
originally announced March 2018.
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Localized defect states in MoS$_2$ monolayers: electronic and optical properties
Authors:
Jens Kunstmann,
Tsegabirhan B. Wendumu,
Gotthard Seifert
Abstract:
Defects usually play an important role in tuning and modifying various properties of semiconducting or insulating materials. Therefore we study the impact of point and line defects on the electronic structure and optical properties of MoS2 monolayers using density-functional methods. The different types of defects form electronic states that are spatially localized on the defect. The strongly loca…
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Defects usually play an important role in tuning and modifying various properties of semiconducting or insulating materials. Therefore we study the impact of point and line defects on the electronic structure and optical properties of MoS2 monolayers using density-functional methods. The different types of defects form electronic states that are spatially localized on the defect. The strongly localized nature is reflected in weak electronic interactions between individual point or line defect and a weak dependence of the defect formation energy on the defect concentration or line defect separation. In the electronic energy spectrum the defect states occur as deep levels in the band gap, as shallow levels very close to the band edges, as well as levels in-between the bulk states. Due to their strongly localized nature, all states of point defects are sharply peaked in energy. Periodic line defects form nearly dispersionless one-dimensional band structures and the related spectral features are also strongly peaked. The electronic structure of the monolayer system is quite robust and it is well preserved for point defect concentrations of up to 6%. The impact of point defects on the optical absorption for concentrations of 1% and below is found to be very small. For higher defect concentrations molybdenum vacancies were found to quench the overall absorption and sulfur defects lead to sharp absorption peaks below the absorption edge of the ideal monolayer. For line defects, we did not find a considerable impact on the absorption spectrum. These results support recent experiments on defective transition metal chalcogenides.
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Submitted 1 June, 2016;
originally announced June 2016.
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Structure, non-stoichiometry, and geometrical frustration of alpha-tetragonal boron
Authors:
Naoki Uemura,
Koun Shirai,
Hagen Eckert,
Jens Kunstmann
Abstract:
Recent discoveries of supposedly pure alpha-tetragonal boron require to revisit its structure. The system is also interesting with respect to a new type of geometrical frustration in elemental crystals, which was found in beta-rhombohedral boron. Based on density functional theory calculations, the present study has resolved the structural and thermodynamic characteristics of pure alpha-tetragonal…
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Recent discoveries of supposedly pure alpha-tetragonal boron require to revisit its structure. The system is also interesting with respect to a new type of geometrical frustration in elemental crystals, which was found in beta-rhombohedral boron. Based on density functional theory calculations, the present study has resolved the structural and thermodynamic characteristics of pure alpha-tetragonal boron. Different from beta-rhombohedral boron, the conditions for stable covalent bonding (a band gap and completely filled valence bands) are almost fulfilled at a composition B_52 with two 4c interstitial sites occupied. This indicates that the ground state of pure alpha-tetragonal boron is stoichiometric. However, the covalent condition is not perfectly fulfilled because non-bonding in-gap states exist that cannot be eliminated. The half occupation of the 4c sites yields a macroscopic amount of residual entropy, which is as large as that of beta-rhombohedral boron. Therefore, alpha-tetragonal boron can be classified as an elemental crystal with geometrical frustration. Deviations from stoichiometry can occur only at finite temperatures. Thermodynamic considerations show that deviations delta from the stoichiometric composition B_(52+delta) are small and positive. For reported high-pressure syntheses conditions delta is predicted to be about 0.1 to 0.2. An important difference between pure and C- or N-containing alpha-tetragonal boron is found in the occupation of interstitial sites: the pure form prefers to occupy the 4c sites, whereas in C- or N-containing forms a mixture of 2a, 8h, and 8i sites are occupied. The present article provides relations of site occupation, delta values, and lattice parameters, which enable us to identify pure alpha-tetragonal and distinguish the pure form from other ones.
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Submitted 4 February, 2016;
originally announced February 2016.
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Diameter-Selective Dispersion of Carbon Nanotubes via Polymers: A Competition between Adsorption and Bundling
Authors:
Hongliu Yang,
Viktor Bezugly,
Jens Kunstmann,
Arianna Filoramo,
Gianaurelio Cuniberti
Abstract:
The mechanism of the selective dispersion of single-walled carbon nanotubes (CNTs) by polyfluorene polymers is studied in this paper. Using extensive molecular dynamics simulations, it is demonstrated that diameter selectivity is the result of a competition between bundling of CNTs and adsorption of polymers on CNT surfaces. The preference for certain diameters corresponds to local minima of the b…
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The mechanism of the selective dispersion of single-walled carbon nanotubes (CNTs) by polyfluorene polymers is studied in this paper. Using extensive molecular dynamics simulations, it is demonstrated that diameter selectivity is the result of a competition between bundling of CNTs and adsorption of polymers on CNT surfaces. The preference for certain diameters corresponds to local minima of the binding energy difference between these two processes. Such minima in the diameter dependence occur due to abrupt changes in the CNT's coverage with polymers and their calculated positions are in quantitative agreement with preferred diameters, reported experimentally. The presented approach defines a theoretical framework for the further understanding and improvement of dispersion/extraction processes.
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Submitted 1 September, 2015;
originally announced September 2015.
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Unveiling the atomic structure of single-wall boron nanotubes
Authors:
Jens Kunstmann,
Viktor Bezugly,
Hauke Rabbel,
Mark H. Rümmeli,
Gianaurelio Cuniberti
Abstract:
Despite recent successes in the synthesis of boron nanotubes (BNTs), the atomic arrangement of their walls has not yet been determined and many questions about their basic properties do remain. Here, we unveil the dynamical stability of BNTs by means of first-principles molecular dynamics simulations. We find that free-standing, single-wall BNTs with diameters larger than 0.6 nm are thermally stab…
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Despite recent successes in the synthesis of boron nanotubes (BNTs), the atomic arrangement of their walls has not yet been determined and many questions about their basic properties do remain. Here, we unveil the dynamical stability of BNTs by means of first-principles molecular dynamics simulations. We find that free-standing, single-wall BNTs with diameters larger than 0.6 nm are thermally stable at the experimentally reported synthesis temperature of 870$^\circ$C and higher. The walls of thermally stable BNTs are found to have a variety of different mixed triangular-hexagonal morphologies. Our results substantiate the importance of mixed triangular-hexagonal morphologies as a structural paradigm for atomically thin boron.
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Submitted 17 April, 2014;
originally announced April 2014.
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Localization of metallicity and magnetic properties of graphene and of graphene nanoribbons doped with boron clusters
Authors:
Cem Ozdogan,
Jens Kunstmann,
Alexander Quandt
Abstract:
As a possible way of modifying the intrinsic properties of graphene we study the doping of graphene by embedded boron clusters with density functional theory. Cluster doping is technologically relevant as the cluster implantation technique can be readily applied to graphene. We find that B7 clusters embedded into graphene and graphene nanoribbons are structurally stable and locally metallize the s…
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As a possible way of modifying the intrinsic properties of graphene we study the doping of graphene by embedded boron clusters with density functional theory. Cluster doping is technologically relevant as the cluster implantation technique can be readily applied to graphene. We find that B7 clusters embedded into graphene and graphene nanoribbons are structurally stable and locally metallize the system. This is done both by the reduction of the Fermi energy and by the introduction of boron states near the Fermi level. A linear chain of boron clusters forms a metallic "wire" inside the graphene matrix. In a zigzag edge graphene nanoribbon the cluster-related states tend to hybridize with the edge and bulk states. The magnetism in boron doped graphene systems is generally very weak. The presence of boron clusters weakens the edge magnetism in zigzag edge graphene nanoribbon, rather than making the system appropriate for spintronics. Thus the doping of graphene with the cluster implantation technique might be a viable technique to locally metallize graphene without destroying its attractive bulk properties.
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Submitted 1 March, 2013;
originally announced March 2013.
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Graphene: Piecing it together
Authors:
Mark H. Rümmeli,
Claudia G. Rocha,
Frank Ortmann,
Imad Ibrahim,
Haldun Sevincli,
Felix Börrnert,
Jens Kunstmann,
Alicja Bachmatiuk,
Markus Pötsche,
Masashi Shiraishi,
Meyya Meyyappan,
Bernd Büchner,
Stephan Roche,
Gianaurelio Cuniberti
Abstract:
Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum h…
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Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.
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Submitted 3 August, 2011;
originally announced August 2011.
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Multiscale Modeling of Nanowire-based Schottky-Barrier Field-Effect Transistors for Sensor Applications
Authors:
Daijiro Nozaki,
Jens Kunstmann,
Felix Zörgiebel,
Walter M. Weber,
Thomas Mikolajick,
Gianaurelio Cuniberti
Abstract:
We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite elements method is used to model realistic device geometries and to calcul…
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We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite elements method is used to model realistic device geometries and to calculate the electrostatic potential across the Schottky-barrier by solving the Poisson equation, and (2) the Landauer approach combined with the method of non-equilibrium Green's functions is employed to calculate the charge transport through the device. Our model correctly reproduces typical I-V characteristics of field-effect transistors and the dependence of the saturated drain current on the gate field and the device geometry are in good agreement with experiments. Our approach is suitable for one-dimensional Schottky-barrier field-effect transistors of arbitrary device geometry and it is intended to be a simulation platform for the development of nanowire-based sensors.
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Submitted 26 May, 2011;
originally announced May 2011.
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Stability of edge states and edge magnetism in graphene nanoribbons
Authors:
Jens Kunstmann,
Cem Özdoğan,
Alexander Quandt,
Holger Fehske
Abstract:
We critically discuss the stability of edge states and edge magnetism in zigzag edge graphene nanoribbons (ZGNRs). We point out that magnetic edge states might not exist in real systems, and show that there are at least three very natural mechanisms - edge reconstruction, edge passivation, and edge closure - which dramatically reduce the effect of edge states in ZGNRs or even totally eliminate the…
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We critically discuss the stability of edge states and edge magnetism in zigzag edge graphene nanoribbons (ZGNRs). We point out that magnetic edge states might not exist in real systems, and show that there are at least three very natural mechanisms - edge reconstruction, edge passivation, and edge closure - which dramatically reduce the effect of edge states in ZGNRs or even totally eliminate them. Even if systems with magnetic edge states could be made, the intrinsic magnetism would not be stable at room temperature. Charge doping and the presence of edge defects further destabilize the intrinsic magnetism of such systems.
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Submitted 9 December, 2010; v1 submitted 15 July, 2010;
originally announced July 2010.
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Functionalizing graphene by embedded boron clusters
Authors:
A. Quandt,
C. Ozdogan,
J. Kunstmann,
H. Fehske
Abstract:
We present a model system that might serve as a blueprint for the controlled layout of graphene based nanodevices. The systems consists of chains of B7 clusters implanted in a graphene matrix, where the boron clusters are not directly connected. We show that the graphene matrix easily accepts these alternating boron chains, and that the implanted boron components may dramatically modify the elec…
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We present a model system that might serve as a blueprint for the controlled layout of graphene based nanodevices. The systems consists of chains of B7 clusters implanted in a graphene matrix, where the boron clusters are not directly connected. We show that the graphene matrix easily accepts these alternating boron chains, and that the implanted boron components may dramatically modify the electronic properties of graphene based nanomaterials. This suggests a functionalization of graphene nanomaterials, where the semiconducting properties might be supplemented by parts of the graphene matrix itself, but the basic wiring will be provided by alternating chains of implanted boron clusters that connect these areas.
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Submitted 25 July, 2008; v1 submitted 21 February, 2008;
originally announced February 2008.
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Linear response separation of a solid into atomic constituents: Li, Al, and their evolution under pressure
Authors:
J. Kunstmann,
L. Boeri,
W. E. Pickett
Abstract:
We present the first realization of the generalized pseudoatom concept introduced by Ball, and adopt the name enatom to minimize confusion. This enatom, which consists of a unique decomposition of the total charge density (or potential) of any solid into a sum of overlapping atomiclike contributions that move rigidly with the nuclei to first order, is calculated using (numerical) linear response…
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We present the first realization of the generalized pseudoatom concept introduced by Ball, and adopt the name enatom to minimize confusion. This enatom, which consists of a unique decomposition of the total charge density (or potential) of any solid into a sum of overlapping atomiclike contributions that move rigidly with the nuclei to first order, is calculated using (numerical) linear response methods, and is analyzed for both fcc Li and Al at pressures of 0, 35, and 50 GPa. These two simple fcc metals (Li is fcc and a good superconductor in the 20-40 GPa range) show different physical behaviors under pressure, which reflects the increasing covalency in Li and the lack of it in Al. The nonrigid (deformation) parts of the enatom charge and potential have opposite signs in Li and Al; they become larger under pressure only in Li. These results establish a method of construction of the enatom, whose potential can be used to obtain a real-space understanding of the vibrational properties and electron-phonon interaction in solids.
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Submitted 9 February, 2007; v1 submitted 24 October, 2006;
originally announced October 2006.
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Broad boron sheets and boron nanotubes: An ab initio study of structural, electronic, and mechanical properties
Authors:
Jens Kunstmann,
Alexander Quandt
Abstract:
Based on a numerical ab initio study, we discuss a structure model for a broad boron sheet, which is the analog of a single graphite sheet, and the precursor of boron nanotubes. The sheet has linear chains of sp hybridized sigma bonds lying only along its armchair direction, a high stiffness, and anisotropic bonds properties. The puckering of the sheet is explained as a mechanism to stabilize th…
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Based on a numerical ab initio study, we discuss a structure model for a broad boron sheet, which is the analog of a single graphite sheet, and the precursor of boron nanotubes. The sheet has linear chains of sp hybridized sigma bonds lying only along its armchair direction, a high stiffness, and anisotropic bonds properties. The puckering of the sheet is explained as a mechanism to stabilize the sp sigma bonds. The anisotropic bond properties of the boron sheet lead to a two-dimensional reference lattice structure, which is rectangular rather than triangular. As a consequence the chiral angles of related boron nanotubes range from 0 to 90 degrees. Given the electronic properties of the boron sheets, we demonstrate that all of the related boron nanotubes are metallic, irrespective of their radius and chiral angle, and we also postulate the existence of helical currents in ideal chiral nanotubes. Furthermore, we show that the strain energy of boron nanotubes will depend on their radii, as well as on their chiral angles. This is a rather unique property among nanotubular systems, and it could be the basis of a different type of structure control within nanotechnology.
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Submitted 20 June, 2006; v1 submitted 16 September, 2005;
originally announced September 2005.
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Constricted Boron Nanotubes
Authors:
Jens Kunstmann,
Alexander Quandt
Abstract:
The recent discovery of pure boron nanotubes raises questions about their detailed atomic structure. Previous simulations predicted tubular structures with smooth or puckered surfaces. Here, we present some novel results based on ab initio simulations of bundled single-wall zigzag boron nanotubes (ropes). Besides the known smooth and puckered modifications, we found new forms that are radially c…
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The recent discovery of pure boron nanotubes raises questions about their detailed atomic structure. Previous simulations predicted tubular structures with smooth or puckered surfaces. Here, we present some novel results based on ab initio simulations of bundled single-wall zigzag boron nanotubes (ropes). Besides the known smooth and puckered modifications, we found new forms that are radially constricted, and which seem to be energetically superior to the known isomers. Furthermore, those structures might be interpreted as intermediate states between ideal tubular phases and the known bulk phases based on boron icosahedra.
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Submitted 15 December, 2004; v1 submitted 29 October, 2004;
originally announced October 2004.
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Nanotubular Boron-Carbon Heterojunctions
Authors:
Jens Kunstmann,
Alexander Quandt
Abstract:
Linear nanotubular boron-carbon heterojunctions are systematically constructed and studied with the help of ab initio total energy calculations. The structural compatibility of the two classes of materials is shown, and a simple recipe that determines all types of stable linear junctions is illustrated in some detail. Our results also suggest the compatibility of various technologically interest…
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Linear nanotubular boron-carbon heterojunctions are systematically constructed and studied with the help of ab initio total energy calculations. The structural compatibility of the two classes of materials is shown, and a simple recipe that determines all types of stable linear junctions is illustrated in some detail. Our results also suggest the compatibility of various technologically interesting types of nanotubular materials, leading to novel types of nanotubular compound materials, and pointing out the possibility of wiring nanotubular devices within heterogeneous nanotubular networks.
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Submitted 17 September, 2004;
originally announced September 2004.
