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Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers
Authors:
Y. Baron,
J. L. Lábár,
S. Lequien,
B. Pécz,
R. Daubriac,
S. Kerdilés,
P. Acosta ALba,
C. Marcenat,
D. Débarre,
F. Lefloch,
F. Chiodi
Abstract:
We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped supe…
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We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped superconducting Si at large scale. In particular, we highlight the effect of the nanosecond laser annealing energy and the impact of multiple laser anneals. Increasing the energy leads to a linear increase of the layer thickness, and to the increase of the superconducting critical temperature $T_c$ from zero ($<35\, mK$) to $0.5\,K$. This value is comparable to superconducting Si layers realised by Gas Immersion Laser Doping where the dopants are incorporated without introducing the deep defects associated to implantation. Superconductivity only appears when the annealed depth is larger than the initial amorphous layer induced by the boron implantation. The number of subsequent anneals results in a more homogeneous doping with reduced amount of structural defects and increased conductivity. The quantitative analysis of $T_c$ concludes on a superconducting/ non superconducting bilayer, with an extremely low resistance interface. This highlights the possibility to couple efficiently superconducting Si to Si channels.
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Submitted 25 June, 2024;
originally announced June 2024.
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Statistical analysis of dislocation cells in uniaxially deformed copper single crystals
Authors:
Sándor Lipcsei,
Szilvia Kalácska,
Péter Dusán Ispánovity,
János L. Lábár,
Zoltán Dankházi,
István Groma
Abstract:
The dislocation microstructure developing during plastic deformation strongly influences the stress-strain properties of crystalline materials. The novel method of high resolution electron backscatter diffraction (HR-EBSD) offers a new perspective to study dislocation patterning. In this work copper single crystals deformed in uniaxial compression were investigated by HR-EBSD, X-ray line profile a…
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The dislocation microstructure developing during plastic deformation strongly influences the stress-strain properties of crystalline materials. The novel method of high resolution electron backscatter diffraction (HR-EBSD) offers a new perspective to study dislocation patterning. In this work copper single crystals deformed in uniaxial compression were investigated by HR-EBSD, X-ray line profile analysis, and transmission electron microscopy (TEM). With these methods the maps of the internal stress, the Nye tensor, and the geometrically necessary dislocation (GND) density were determined at different load levels. In agreement with the composite model long-range internal stress was directly observed in the cell interiors. Moreover, it is found from the fractal analysis of the GND maps that the fractal dimension of the cell structure is decreasing with increasing average spatial dislocation density fluctuation. It is shown that the evolution of different types of dislocations can be successfully monitored with this scanning electron microscopy based technique.
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Submitted 21 July, 2022;
originally announced July 2022.
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Revealing the grain structure of graphene grown by chemical vapor deposition
Authors:
Péter Nemes - Incze,
Kwon Jae Yoo,
Levente Tapasztó,
Gergely Dobrik,
János Lábár,
Zsolt E. Horváth,
Chanyong Hwang,
László Péter Biró
Abstract:
The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we present an approach to reveal the grain structure of graphene by the selective oxidation of defects and subsequent atomic force microscopy analysis. This technique offers a quick and easy alternative to different electron…
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The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we present an approach to reveal the grain structure of graphene by the selective oxidation of defects and subsequent atomic force microscopy analysis. This technique offers a quick and easy alternative to different electron microscopy and diffraction methods and may be used to give quick feedback on the quality of graphene samples grown by chemical vapor deposition.
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Submitted 18 July, 2011;
originally announced July 2011.
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Asymmetric intermixing in Pt/Ti
Authors:
P. Süle,
M. Menyhárd,
L. Kótis,
J. Lábár,
W. F. Egelhoff Jr
Abstract:
The ion-sputtering induced intermixing is studied by Monte-Carlo TRIM, molecular dynamics (MD) simulations, and Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers. Experimental evidence is found for the asymmetry of intermixing in Pt/Ti, and in Ti/Pt. In Ti/Pt we get a much weaker interdiffusion than in Pt/Ti.…
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The ion-sputtering induced intermixing is studied by Monte-Carlo TRIM, molecular dynamics (MD) simulations, and Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers. Experimental evidence is found for the asymmetry of intermixing in Pt/Ti, and in Ti/Pt. In Ti/Pt we get a much weaker interdiffusion than in Pt/Ti. The unexpected enhancement of the interdiffusion of the Pt atoms into the Ti substrate has also been demonstrated by simulations. We are able to capture the essential features of intermixing using TRIM and MD simulations for ion-beam sputtering and get reasonable values for interface broadening which can be compared with the experimental measurements. However, the origin of the asymmetry remains poorly understood yet.
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Submitted 9 October, 2006;
originally announced October 2006.
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Interface-anisotropy induced asymmetry of intermixing in bilayers
Authors:
P. Süle,
M. Menyhárd,
L. Kótis,
J. Lábár,
W. F. Egelhoff Jr
Abstract:
The ion-sputtering induced intermixing is studied by molecular dynamics (MD) simulations and by Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers. Experimental evidence is found for the asymmetry of intermixing in Pt/Ti and in Ti/Pt. An unexpected enhancement of the injection of the heavy Pt atoms into the Ti…
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The ion-sputtering induced intermixing is studied by molecular dynamics (MD) simulations and by Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers. Experimental evidence is found for the asymmetry of intermixing in Pt/Ti and in Ti/Pt. An unexpected enhancement of the injection of the heavy Pt atoms into the Ti substrate is observed both by AES-DP and by MD simulations. In Ti/Pt we get a much weaker interdiffusion than in Pt/Ti. The asymmetry is explained by the backscattering of hyperthermal particles at the mass-anisotropic interface and which is reproduced by computer atomistic simulations. The AES-DP measurements support our earlier predictions (P. Süle, M. Menyhárd, Phys. Rev., {\bf B71}, 113413 (2005)) obtained for mass-anisotropic bilayers.
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Submitted 4 October, 2005;
originally announced October 2005.
