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Theory for constructing effective models for electrons in generic bilayer graphene
Authors:
H. Minh Lam,
V. Nam Do
Abstract:
We present and discuss in detail practical techniques in formulating effective models to describe the dynamics of low-energy electrons in generic bilayer graphene. Starting from a tight-binding model using the $p_z$ orbital of carbon atoms as a representation basis set, we reformulate it into the problem of coupling between Bloch states defined in each graphene layer. This approach allows transfer…
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We present and discuss in detail practical techniques in formulating effective models to describe the dynamics of low-energy electrons in generic bilayer graphene. Starting from a tight-binding model using the $p_z$ orbital of carbon atoms as a representation basis set, we reformulate it into the problem of coupling between Bloch states defined in each graphene layer. This approach allows transferring the original problem into the determination of Bloch states in two independent material layers and coupling rules of such states. We show two schemes to parameterize coupled Bloch state vectors. For the bilayer graphene configurations of small twist angle in which the long wavelength approximation is applicable, we show that an effective Hamiltonian can be written in the canonical form of a kinetic term defined by the momentum operator and a potential term defined by the position operator. The validity of effective models of different sophistication levels and their potential application in treating various physical aspects are numerically discussed.
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Submitted 25 May, 2022;
originally announced May 2022.
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Observing crossover between quantum speed limits
Authors:
Gal Ness,
Manolo R. Lam,
Wolfgang Alt,
Dieter Meschede,
Yoav Sagi,
Andrea Alberti
Abstract:
Quantum mechanics sets fundamental limits on how fast quantum states can be transformed in time. Two well-known quantum speed limits are the Mandelstam-Tamm and the Margolus-Levitin bounds, which relate the maximum speed of evolution to the system's energy uncertainty and mean energy, respectively. Here, we test concurrently both limits in a multi-level system by following the motion of a single a…
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Quantum mechanics sets fundamental limits on how fast quantum states can be transformed in time. Two well-known quantum speed limits are the Mandelstam-Tamm and the Margolus-Levitin bounds, which relate the maximum speed of evolution to the system's energy uncertainty and mean energy, respectively. Here, we test concurrently both limits in a multi-level system by following the motion of a single atom in an optical trap using fast matter wave interferometry. Our data reveal two different regimes: one where the Mandelstam-Tamm limit constrains the evolution at all times, and a second where a crossover to the Margolus-Levitin limit is manifested at longer times. We take a geometric approach to quantify the deviation from the speed limit, measuring how much the matter wave's quantum evolution deviates from the geodesic path in the Hilbert space of the multi-level system. Our results, establishing quantum speed limits beyond the simple two-level system, are important to understand the ultimate performance of quantum computing devices and related advanced quantum technologies.
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Submitted 19 October, 2021; v1 submitted 12 April, 2021;
originally announced April 2021.
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Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
Authors:
Jingyu Duan,
Janne S. Lehtinen,
Michael A. Fogarty,
Simon Schaal,
Michelle Lam,
Alberto Ronzani,
Andrey Shchepetov,
Panu Koppinen,
Mika Prunnila,
Fernando Gonzalez-Zalba,
John J. L. Morton
Abstract:
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to dem…
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We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon.
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Submitted 29 September, 2020;
originally announced September 2020.
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Effects of spatially-varying substrate anchoring on instabilities and dewetting of thin Nematic Liquid Crystal films
Authors:
M. Lam,
L. Kondic,
L. Cummings
Abstract:
Partially wetting nematic liquid crystal (NLC) films on substrates are unstable to dewetting-type instabilities due to destablizing solid/NLC interaction forces. These instabilities are modified by the nematic nature of the films, which influences the effective solid/NLC interaction. In this work, we focus on the influence of imposed substrate anchoring on the instability development. The analysis…
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Partially wetting nematic liquid crystal (NLC) films on substrates are unstable to dewetting-type instabilities due to destablizing solid/NLC interaction forces. These instabilities are modified by the nematic nature of the films, which influences the effective solid/NLC interaction. In this work, we focus on the influence of imposed substrate anchoring on the instability development. The analysis is carried out within a long-wave formulation based on the Leslie-Ericksen description of NLC films. Linear stability analysis of the resulting equations shows that some features of the instability, such as emerging wavelengths, may not be influenced by the imposed substrate anchoring. Going further into the nonlinear regime, considered via large-scale GPU-based simulations, shows however that nonlinear effects may play an important role, in particular in the case of strong substrate anchoring anisotropy. Our simulations show that instability of the film develops in two stages: the first stage involves formation of ridges that are perpendicular to the local anchoring direction; and the second involves breakup of these ridges and formation of drops, whose final distribution is influenced by the anisotropy imposed by the substrate. Finally, we show that imposing more complex substrate anisotropy patterns allows us to reach basic understanding of the influence of substrate-imposed defects in director orientation on the instability evolution.
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Submitted 27 September, 2020;
originally announced September 2020.
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Singlet Pathway to the Ground State of Ultracold Polar Molecules
Authors:
Anbang Yang,
Sofia Botsi,
Sunil Kumar,
Sambit B. Pal,
Mark M. Lam,
Ieva Čepaitė,
Andrew Laugharn,
Kai Dieckmann
Abstract:
Starting from weakly bound Feshbach molecules, we demonstrate a two-photon pathway to the dipolar ground state of bi-alkali molecules that involves only singlet-to-singlet optical transitions. This pathway eliminates the search for a suitable intermediate state with sufficient singlet-triplet mixing and the exploration of its hyperfine structure, as is typical for pathways starting from triplet do…
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Starting from weakly bound Feshbach molecules, we demonstrate a two-photon pathway to the dipolar ground state of bi-alkali molecules that involves only singlet-to-singlet optical transitions. This pathway eliminates the search for a suitable intermediate state with sufficient singlet-triplet mixing and the exploration of its hyperfine structure, as is typical for pathways starting from triplet dominated Feshbach molecules. By selecting a Feshbach state with a stretched singlet hyperfine component and controlling the polarization of the excitation laser, we assure coupling to only a single hyperfine component of the $\textrm{A}^{1}Σ^{+}$ excited potential, even if the hyperfine structure is not resolved. Similarly, we address a stretched hyperfine component of the $\textrm{X}^{1}Σ^{+}$ rovibrational ground state, and therefore an ideal three level system is established. We demonstrate this pathway with ${}^{6}\textrm{Li}{}^{40}\textrm{K}$ molecules. By exploring deeply bound states of the $\textrm{A}^{1}Σ^{+}$ potential, we are able to obtain large and balanced Rabi frequencies for both transitions. This method can be applied to other molecular species.
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Submitted 7 August, 2019;
originally announced August 2019.
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Ultrafast Spin-To-Charge Conversion at the Surface of Topological Insulator Thin Films
Authors:
Xinbo Wang,
Liang Cheng,
Dapeng Zhu,
Yang Wu,
Mengji Chen,
Yi Wang,
Daming Zhao,
Chris B. Boothroyd,
Yeng Ming Lam,
Jian-Xin Zhu,
Marco Battiato,
Justin C. W. Song,
Hyunsoo Yang,
Elbert E. M. Chia
Abstract:
Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, we present an all-optical method that enables unprecedented tracking of the ultrafast dynamics of spin-to-charge conversion in a prototypical topological…
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Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, we present an all-optical method that enables unprecedented tracking of the ultrafast dynamics of spin-to-charge conversion in a prototypical topological insulator Bi$_2$Se$_3$/ferromagnetic Co heterostructure, down to the sub-picosecond timescale. Compared to pure Bi$_2$Se$_3$ or Co, we observe a giant terahertz emission in the heterostructure than originates from spin-to-charge conversion, in which the topological surface states play a crucial role. We identify a 0.12-picosecond timescale that sets a technological speed limit of spin-to-charge conversion processes in topological insulators. In addition, we show that the spin-to-charge conversion efficiency is temperature independent in Bi$_2$Se$_3$ as expected from the nature of the surface states, paving the way for designing next-generation high-speed opto-spintronic devices based on topological insulators at room temperature.
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Submitted 4 October, 2018;
originally announced October 2018.
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Stable biexcitons in two-dimensional metal-halide perovskites with strong dynamic lattice disorder
Authors:
Félix Thouin,
Stefanie Neutzner,
Daniele Cortecchia,
Vlad Alexandru Dragomir,
Cesare Soci,
Teddy Salim,
Yeng Ming Lam,
Richard Leonelli,
Annamaria Petrozza,
Ajay Ram Srimath Kandada,
Carlos Silva
Abstract:
With strongly bound and stable excitons at room temperature, single-layer, two-dimensional organic-inorganic hybrid perovskites are viable semiconductors for light-emitting quantum optoelectronics applications. In such a technological context, it is imperative to comprehensively explore all the factors --- chemical, electronic and structural --- that govern strong multi-exciton correlations. Here,…
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With strongly bound and stable excitons at room temperature, single-layer, two-dimensional organic-inorganic hybrid perovskites are viable semiconductors for light-emitting quantum optoelectronics applications. In such a technological context, it is imperative to comprehensively explore all the factors --- chemical, electronic and structural --- that govern strong multi-exciton correlations. Here, by means of two-dimensional coherent spectroscopy, we examine excitonic many-body effects in pure, single-layer (PEA)$_2$PbI$_4$ (PEA = phenylethylammonium). We determine the binding energy of biexcitons --- correlated two-electron, two-hole quasiparticles --- to be $44 \pm 5$\,meV at room temperature. The extraordinarily high values are similar to those reported in other strongly excitonic two-dimensional materials such as transition-metal dichalchogenides. Importantly, we show that this binding energy increases by $\sim25$\% upon cooling to 5\,K. Our work highlights the importance of multi-exciton correlations in this class of technologically promising, solution-processable materials, in spite of the strong effects of lattice fluctuations and dynamic disorder.
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Submitted 11 February, 2018; v1 submitted 13 December, 2017;
originally announced December 2017.
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Stability of thin fluid films characterised by a complex form of structural/effective disjoining pressure
Authors:
Michael-Angelo Y. -H. Lam,
Linda J. Cummings,
Lou Kondic
Abstract:
We discuss instabilities of fluid films of nanoscale thickness, with a particular focus on films where the destabilising mechanism allows for linear instability, metastability, and absolute stability. Our study is motivated by nematic liquid crystal films; however we note that similar instability mechanisms, and forms of the effective disjoining pressure, appear in other contexts, such as the well…
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We discuss instabilities of fluid films of nanoscale thickness, with a particular focus on films where the destabilising mechanism allows for linear instability, metastability, and absolute stability. Our study is motivated by nematic liquid crystal films; however we note that similar instability mechanisms, and forms of the effective disjoining pressure, appear in other contexts, such as the well-studied problem of polymeric films on two-layered substrates. The analysis is carried out within the framework of the long-wave approximation, which leads to a fourth order nonlinear partial different equation for the film thickness. Within the considered formulation, the nematic character of the film leads to an additional contribution to the disjoining pressure, changing its functional form. This effective disjoining pressure is characterised by the presence of a local maximum for non-vanishing film thickness. Such a form leads to complicated instability evolution that we study by analytical means, including application of marginal stability criteria, and by extensive numerical simulations that help us develop a better understanding of instability evolution in the nonlinear regime. This combination of analytical and computational techniques allows us to reach novel understanding of relevant instability mechanisms, and of their influence on transient and fully developed fluid film morphologies.
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Submitted 12 April, 2017;
originally announced April 2017.
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Optical Properties of Organometallic Perovskite: An ab initio Study using Relativistic GW Correction and Bethe-Salpeter Equation
Authors:
Towfiq Ahmed,
C. La-O-Vorakiat,
T. Salim,
Y. M. Lam,
Elbert E. M. Chia,
Jian-Xin Zhu
Abstract:
In the development of highly efficient photovoltaic cells, solid perovskite systems have demonstrated unprecedented promise, with the figure of merit exceeding nineteen percent of efficiency. In this paper, we investigate the optical and vibrational properties of organometallic cubic perovskite CH3NH3PbI3 using first-principles calculations. For accurate theoretical description, we go beyond conve…
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In the development of highly efficient photovoltaic cells, solid perovskite systems have demonstrated unprecedented promise, with the figure of merit exceeding nineteen percent of efficiency. In this paper, we investigate the optical and vibrational properties of organometallic cubic perovskite CH3NH3PbI3 using first-principles calculations. For accurate theoretical description, we go beyond conventional density functional theory (DFT), and calculated optical conductivity using relativist quasi-particle (GW) correction. Incorporating these many-body effects, we further solve Bethe-Salpeter equations (BSE) for excitons, and found enhanced optical conductivity near the gap edge. Due to the presence of organic methylammonium cations near the center of the perovskite cell, the system is sensitive to low energy vibrational modes. We estimate the phonon modes of CH3NH3PbI3 using small displacement approach, and further calculate the infrared absorption (IR) spectra. Qualitatively, our calculations of low-energy phonon frequencies are in good agreement with our terahertz measurements. Therefore, for both energy scales (around 2 eV and 0-20 meV), our calculations reveal the importance of many-body effects and their contributions to the desirable optical properties in the cubic organometallic perovskites system.
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Submitted 4 February, 2015; v1 submitted 15 September, 2014;
originally announced September 2014.
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Picosecond Dynamics of Internal Exciton Transitions in CdSe Nanorods
Authors:
David G. Cooke,
Peter Uhd Jepsen,
Jun Yan Lek,
Yeng Ming Lam,
Fredrik Sy,
Marc M. Dignam
Abstract:
The picosecond dynamics of excitons in colloidal CdSe nanorods are directly measured via their 1s to 2p-like internal transitions by ultra-broadband terahertz spectroscopy. Broadened absorption peaks from both the longitudinal and transverse states are observed at 8.5 and 11 THz, respectively. The onset of exciton-LO phonon coupling appears as a bleach in the optical conductivity spectra at the LO…
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The picosecond dynamics of excitons in colloidal CdSe nanorods are directly measured via their 1s to 2p-like internal transitions by ultra-broadband terahertz spectroscopy. Broadened absorption peaks from both the longitudinal and transverse states are observed at 8.5 and 11 THz, respectively. The onset of exciton-LO phonon coupling appears as a bleach in the optical conductivity spectra at the LO phonon energy for times > 1 ps after excitation. Simulations show a suppressed exciton temperature due to thermally excited hole states being rapidly captured onto ligands or unpassivated surface states. The relaxation kinetics are manipulated and the longitudinal transition is quenched by surface ligand exchange with hole capturing pyridine.
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Submitted 15 October, 2013;
originally announced October 2013.
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FeCl3 based Few-Layer Graphene Intercalation Compounds: Single Linear Dispersion Electronic Band Structure and Strong Charge Transfer Doping
Authors:
Da Zhan,
Li Sun,
Zhenhua Ni,
Lei Liu,
Xiaofeng Fan,
Yingying Wang,
Ting Yu,
Yeng Ming Lam,
Wei Huang,
Zexiang Shen
Abstract:
Graphene has attracted great attentions since its first discovery in 2004. Various approaches have been proposed to control its physical and electronic properties. Here, we report that graphene based intercalation compounds is an efficient method to modify the electronic properties of few layer graphene (FLG). FeCl3 intercalated FLG were successfully prepared by two-zone vapor transport method. Th…
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Graphene has attracted great attentions since its first discovery in 2004. Various approaches have been proposed to control its physical and electronic properties. Here, we report that graphene based intercalation compounds is an efficient method to modify the electronic properties of few layer graphene (FLG). FeCl3 intercalated FLG were successfully prepared by two-zone vapor transport method. This is the first report on full intercalation for graphene samples. The features of the Raman G peak of such few-layer graphene intercalation compounds (FLGIC) are in good agreement with their full intercalation structures. The FLGIC presents single Lorentzian 2D peak, similar to that of single layer graphene, indicating the loss of electronic coupling between adjacent graphene layers. First principle calculations further reveal that the band structure of FLGIC is similar to single layer graphene but with strong doping effect due to the charge transfer from graphene to FeCl3. The successful fabrication of FLGIC opens a new way to modify properties of FLG for fundamental studies and future applications.
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Submitted 25 June, 2010;
originally announced June 2010.
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Origin and the role of device physics in the magnetic field effect in organic semiconductor devices
Authors:
B. K. Li,
H. T. He,
W. J. Chen,
M. K. Lam,
K. W. Cheah,
J. N. Wang
Abstract:
A small magnetic field (~30 mT) can effectively modulate the electroluminescence, conductance and/or photocurrent of organic semiconductor based devices, up to 10% at room temperature. This organic magnetic field effect (OMFE) is one of the most unusual phenomena of both organic electronics and, more basically, magnetism, since all device components are nonmagnetic. However, in spite of latest sur…
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A small magnetic field (~30 mT) can effectively modulate the electroluminescence, conductance and/or photocurrent of organic semiconductor based devices, up to 10% at room temperature. This organic magnetic field effect (OMFE) is one of the most unusual phenomena of both organic electronics and, more basically, magnetism, since all device components are nonmagnetic. However, in spite of latest surge of research interest, its underlying mechanism is still hotly debated. Here we experimentally identify that the magnetic field induced increase of intersystem crossing rate (between either excitons or polaron pairs), and decrease of triplet exciton-polaron quenching rate are responsible for the observed OMFEs. The diversity of observed OMFE results, such as sign change and operating condition dependence, originates from the difference of devices physics.
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Submitted 24 March, 2010;
originally announced March 2010.
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Effects of Paramagnetic Ferrocenium Cations on the Magnetic Properties of the Anionic Single-Molecule Magnet [Mn12O12(O2CC6F5)16(H2O)4]-
Authors:
Takayoshi Kuroda-Sowa,
Matthew Lam,
Arnold L. Rheingold,
Christoph Frommen,
William M. Reiff,
Motohiro Nakano,
Jae Yoo,
A. L. Maniero,
Louis-Claude Brunel,
George Christou,
David N. Hendrickson
Abstract:
The preparation and physical characterization are reported for several single-molecule magnet salts to investigate the effects of paramagnetic cations on the magnetization relaxation behavior of [Mn12]- anionic single-molecule magnets.
The preparation and physical characterization are reported for several single-molecule magnet salts to investigate the effects of paramagnetic cations on the magnetization relaxation behavior of [Mn12]- anionic single-molecule magnets.
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Submitted 10 October, 2001; v1 submitted 8 October, 2001;
originally announced October 2001.
