Showing 1–14 of 14 results for author: Lee, Z

Angstrom-wide conductive channels in black phosphorus by Cu intercalation

Authors: Suk Woo Lee, Lu Qiu, Jong Chan Yoon, Yohan Kim, Da Li, Inseon Oh, Gil-Ho Lee, Jung-Woo Yoo, Hyung-Joon Shin, Feng Ding, Zonghoon Lee

Abstract: Intercalation is an effective method to improve and modulate properties of two-dimensional materials. Even so, spatially controlled intercalation at atomic scale, which is important to introduce and modulated properties, has not been successful due to difficulties in controlling the diffusion of intercalants. Here, we show formation of angstrom-wide conductive channels (~4.3 A) in black phosphorus… ▽ More Intercalation is an effective method to improve and modulate properties of two-dimensional materials. Even so, spatially controlled intercalation at atomic scale, which is important to introduce and modulated properties, has not been successful due to difficulties in controlling the diffusion of intercalants. Here, we show formation of angstrom-wide conductive channels (~4.3 A) in black phosphorus by Cu intercalation. The atomic structure, resultant microstructural effects, intercalation mechanism, and local variations of electronic properties modulated in black phosphorus by Cu intercalation were investigated extensively by transmission electron microscopy including in situ observation, DFT calculation, and conductive atomic force microscopy. △ Less

Submitted 21 January, 2021; originally announced January 2021.

Crystallographic Reconstruction Driven Modified Mechanical Properties in Anisotropic Rhenium Disulfides

Authors: Jung Hwa Kim, Xinyue Dai, Feng Ding, Zonghoon Lee

Abstract: Atomic-scale investigation on mechanical behaviors is highly necessary to fully understand the fracture mechanics especially of brittle materials, which are determined by atomic-scale phenomena (e.g., lattice trapping). Here, exfoliated anisotropic rhenium disulfide (ReS2) flakes are used to investigate atomic-scale crack propagation depending on the propagation directions. While the conventional… ▽ More Atomic-scale investigation on mechanical behaviors is highly necessary to fully understand the fracture mechanics especially of brittle materials, which are determined by atomic-scale phenomena (e.g., lattice trapping). Here, exfoliated anisotropic rhenium disulfide (ReS2) flakes are used to investigate atomic-scale crack propagation depending on the propagation directions. While the conventional strain-stress curves exhibit a strong anisotropy depending on the cleavage direction of ReS2, but our experimental results show a reduced cleavage anisotropy due to the lattice reconstruction in [100] cracking with high resistance to fracture. In other words, [010] and [110] cracks with low barriers to cleavage exhibit the ultimate sharpness of the crack tip without plastic deformation, whereas [100] cracks drive lattice rotation on one side of the crack, leading to a non-flat grain boundary formation. Finally, crystallographic reconstruction associated with the high lattice randomness of two-dimensional materials drives to a modified cleavage tendency, further indicating the importance of atomic-scale studies for a complete understanding of the mechanics. △ Less

Submitted 2 December, 2020; originally announced December 2020.

Comments: 15 pages, 4 figures

Polytypism in Few-Layer Gallium Selenide

Authors: Soo Yeon Lim, Jae-Ung Lee, Jung Hwa Kim, Liangbo Liang, Xiangru Kong, Thi Thanh Huong Nguyen, Zonghoon Lee, Sunglae Cho, Hyeonsik Cheong

Abstract: Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X=S and Se). Four polytypes of bulk GaSe, designated as beta-, epsilon-, gamma-, and delta-GaSe, have been reported. Since different polytypes result in different op… ▽ More Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X=S and Se). Four polytypes of bulk GaSe, designated as beta-, epsilon-, gamma-, and delta-GaSe, have been reported. Since different polytypes result in different optical and electrical properties even for the same thickness, identifying the polytype is essential in utilizing this material for various optoelectronic applications. We performed polarized Raman measurement on GaSe and found different ultra-low-frequency Raman spectra of inter-layer vibrational modes even for the same thickness due to different stacking sequences of the polytypes. By comparing the ultra-low-frequency Raman spectra with theoretical calculations and high-resolution electron microscopy measurements, we established the correlation between the ultra-low-frequency Raman spectra and the stacking sequences for trilayer GaSe. We further found that the AB-type stacking is more stable than the AA'-type stacking in GaSe. △ Less

Submitted 23 September, 2020; originally announced September 2020.

Journal ref: Nanoscale, 2020,12, 8563-8573

On-Stack Two-Dimensional Conversion of MoS2 into MoO3

Authors: Taeg Yeoung Ko, Areum Jeong, Wontaek Kim, Jinhwan Lee, Youngchan Kim, Jung Eun Lee, Gyeong Hee Ryu, Kwanghee Park, Dogyeong Kim, Zonghoon Lee, Min Hyung Lee, Changgu Lee, Sunmin Ryu

Abstract: Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D 'on-stack' chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbat… ▽ More Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D 'on-stack' chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbation of the 2D morphology, a nonthermal oxidation using O2 plasma was employed. The early stage of the reaction was characterized by a defect-induced Raman peak, drastic quenching of photoluminescence (PL) signals and sub-nm protrusions in atomic force microscopy images. As the reaction proceeded from the uppermost layer to the buried layers, PL and optical second harmonic generation signals showed characteristic modulations revealing a layer-by-layer conversion. The plasma-generated 2D oxides, confirmed as MoO3 by x-ray photoelectron spectroscopy, were found to be amorphous but extremely flat with a surface roughness of 0.18 nm, comparable to that of 1L MoS2. The rate of oxidation quantified by Raman spectroscopy decreased very rapidly for buried sulfide layers due to protection by the surface 2D oxides, exhibiting a pseudo-self-limiting behavior. As exemplified in this work, various on-stack chemical transformations can be applied to other 2D materials in forming otherwise unobtainable materials and complex heterostructures, thus expanding the palette of 2D material building blocks. △ Less

Submitted 10 August, 2020; originally announced August 2020.

Journal ref: 2D materials, 4, 2016, 014003

Structural and optical properties of single- and few-layer magnetic semiconductor CrPS4

Authors: Jinhwan Lee, Taeg Yeoung Ko, Jung Hwa Kim, Hunyoung Bark, Byunggil Kang, Soon-Gil Jung, Tuson Park, Zonghoon Lee, Sunmin Ryu, Changgu Lee

Abstract: Atomically thin binary 2-dimensional (2D) semiconductors exhibit diverse physical properties depending on their composition, structure and thickness. By adding another element in those materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and opti… ▽ More Atomically thin binary 2-dimensional (2D) semiconductors exhibit diverse physical properties depending on their composition, structure and thickness. By adding another element in those materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor. Its structural details were revealed by X-ray and electron diffractions. Transmission electron microscopy showed that preferentially-cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations. Strong in-plane optical anisotropy induced birefringence that also enabled efficient determination of crystallographic orientation using polarized microscopy. The lattice vibrations were probed by Raman spectroscopy for the first time and exhibited significant dependence on thickness of crystals exfoliated down to single layer. Optical absorption determined by reflectance contrast was dominated by d-d type transitions localized at Cr3+ ions, which was also responsible for the major photoluminescence peak at 1.31 eV. The spectral features in the absorption and emission spectra exhibited noticeable thickness-dependence and hinted a high photochemical activity for single layer CrPS4. The current structural and optical investigation will provide a firm basis for future study and application of this novel magnetic semiconductor. △ Less

Submitted 6 August, 2020; originally announced August 2020.

Comments: 32 pages, 5 figures

Journal ref: ACS Nano 11, 2017, 10935

Complete determination of crystallographic orientation of ReX2 (X=S, Se) by polarized Raman spectroscopy

Authors: Yun Choi, Keunui Kim, Soo Yeon Lim, Jungcheol Kim, Je Myoung Park, Jung Hwa Kim, Zonghoon Lee, Hyeonsik Cheong

Abstract: Polarized Raman spectroscopy on few-layer ReS2 and ReSe2 was carried out to determine the crystallographic orientations. Since monolayer ReX2 (X=S or Se) has a distorted trigonal structure with only an inversion center, there is in-plane anisotropy and the two faces of a monolayer crystal are not equivalent. Since many physical properties vary sensitively depending on the crystallographic orientat… ▽ More Polarized Raman spectroscopy on few-layer ReS2 and ReSe2 was carried out to determine the crystallographic orientations. Since monolayer ReX2 (X=S or Se) has a distorted trigonal structure with only an inversion center, there is in-plane anisotropy and the two faces of a monolayer crystal are not equivalent. Since many physical properties vary sensitively depending on the crystallographic orientation, it is important to develop a reliable method to determine the crystal axes of ReX2. By comparing the relative polarization dependences of some representative Raman modes measured with three different excitation laser energies with high-resolution scanning transmission electron microscopy, we established a reliable procedure to determine the all three principal directions of few-layer ReX2 including a way to distinguish the two types of faces: a 2.41-eV laser for ReS2 or a 1.96-eV laser for ReSe2 should be chosen as the excitation source of polarized Raman measurements; then the relative directions of the maximum intensity polarization of the Raman modes at 151 and 212 cm-1 (124 and 161 cm-1) of ReS2 (ReSe2) can be used to determine the face types and the Re-chain direction unambiguously. △ Less

Submitted 25 September, 2019; originally announced September 2019.

Comments: 22 pages, 4 figures, supplementary information 9 pages

Chemically Induced Transformation of CVD-Grown Bilayer Graphene into Single Layer Diamond

Authors: Pavel V. Bakharev, Ming Huang, Manav Saxena, Suk Woo Lee, Se Hun Joo, Sung O Park, Jichen Dong, Dulce Camacho-Mojica, Sunghwan Jin, Youngwoo Kwon, Mandakini Biswal, Feng Ding, Sang Kyu Kwak, Zonghoon Lee, Rodney S. Ruoff

Abstract: Notwithstanding numerous density functional studies on the chemically induced transformation of multilayer graphene into a diamond-like film, a comprehensive convincing experimental proof of such a conversion is still lacking. We show that the fluorination of graphene sheets in Bernal (AB)-stacked bilayer graphene (AB-BLG) grown by chemical vapor deposition on a single crystal CuNi(111) surface tr… ▽ More Notwithstanding numerous density functional studies on the chemically induced transformation of multilayer graphene into a diamond-like film, a comprehensive convincing experimental proof of such a conversion is still lacking. We show that the fluorination of graphene sheets in Bernal (AB)-stacked bilayer graphene (AB-BLG) grown by chemical vapor deposition on a single crystal CuNi(111) surface triggers the formation of interlayer carbon-carbon bonds, resulting in a fluorinated diamond monolayer (F-diamane). Induced by fluorine chemisorption, the phase transition from AB-BLG to single layer diamond was studied and verified by X-ray photoelectron, ultraviolet photoelectron, Raman, UV-Vis, electron energy loss spectroscopies, transmission electron microscopy, and DFT calculations. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Comments: 61 pages, 27 figures, 2 tables

Quantifying Inactive Lithium in Lithium Metal Batteries

Authors: Chengcheng Fang, Jinxing Li, Minghao Zhang, Yihui Zhang, Fan Yang, Jungwoo Z. Lee, Min-Han Lee, Judith Alvarado, Marshall A. Schroeder, Yangyuchen Yang, Bingyu Lu, Nicholas Williams, Miguel Ceja, Li Yang, Mei Cai, Jing Gu, Kang Xu, Xuefeng Wang, Ying Shirley Meng

Abstract: Inactive lithium (Li) formation is the immediate cause of capacity loss and catastrophic failure of Li metal batteries. However, the chemical component and the atomic level structure of inactive Li have rarely been studied due to the lack of effective diagnosis tools to accurately differentiate and quantify Li+ in solid electrolyte interphase (SEI) components and the electrically isolated unreacte… ▽ More Inactive lithium (Li) formation is the immediate cause of capacity loss and catastrophic failure of Li metal batteries. However, the chemical component and the atomic level structure of inactive Li have rarely been studied due to the lack of effective diagnosis tools to accurately differentiate and quantify Li+ in solid electrolyte interphase (SEI) components and the electrically isolated unreacted metallic Li0, which together comprise the inactive Li. Here, by introducing a new analytical method, Titration Gas Chromatography (TGC), we can accurately quantify the contribution from metallic Li0 to the total amount of inactive Li. We uncover that the Li0, rather than the electrochemically formed SEI, dominates the inactive Li and capacity loss. Using cryogenic electron microscopies to further study the microstructure and nanostructure of inactive Li, we find that the Li0 is surrounded by insulating SEI, losing the electronic conductive pathway to the bulk electrode. Coupling the measurements of the Li0 global content to observations of its local atomic structure, we reveal the formation mechanism of inactive Li in different types of electrolytes, and identify the true underlying cause of low Coulombic efficiency in Li metal deposition and stripping. We ultimately propose strategies to enable the highly efficient Li deposition and stripping to enable Li metal anode for next generation high energy batteries. △ Less

Submitted 31 May, 2019; v1 submitted 2 November, 2018; originally announced November 2018.

Efficient first principles simulation of electron scattering factors for transmission electron microscopy

Authors: Toma Susi, Jacob Madsen, Ursula Ludacka, Jens Jørgen Mortensen, Timothy J. Pennycook, Zhongbo Lee, Jani Kotakoski, Ute Kaiser, Jannik C. Meyer

Abstract: Electron microscopy is a powerful tool for studying the properties of materials down to their atomic structure. In many cases, the quantitative interpretation of images requires simulations based on atomistic structure models. These typically use the independent atom approximation that neglects bonding effects, which may, however, be measurable and of physical interest. Since all electrons and the… ▽ More Electron microscopy is a powerful tool for studying the properties of materials down to their atomic structure. In many cases, the quantitative interpretation of images requires simulations based on atomistic structure models. These typically use the independent atom approximation that neglects bonding effects, which may, however, be measurable and of physical interest. Since all electrons and the nuclear cores contribute to the scattering potential, simulations that go beyond this approximation have relied on computationally highly demanding all-electron calculations. Here, we describe a new method to generate ab initio electrostatic potentials when describing the core electrons by projector functions. Combined with an interface to quantitative image simulations, this implementation enables an easy and fast means to model electron microscopy images. We compare simulated transmission electron microscopy images and diffraction patterns to experimental data, showing an accuracy equivalent to earlier all-electron calculations at a much lower computational cost. △ Less

Submitted 29 October, 2018; v1 submitted 14 March, 2018; originally announced March 2018.

Comments: 10 pages, 5 figures, 2 tables

Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy

Authors: Minjung Kim, Songhee Han, Jung Hwa Kim, Jae-Ung Lee, Zonghoon Lee, Hyeonsik Cheong

Abstract: Orthorhombic tungsten ditelluride (WTe2), with a distorted 1T structure, exhibits a large magnetoresistance that depends on the orientation, and its electrical characteristics changes rom semimetallic to insulating as the thickness decreases. Through polarized Raman spectroscopy in combination with transmission electron diffraction, we establish a reliable method to determine the thickness and cry… ▽ More Orthorhombic tungsten ditelluride (WTe2), with a distorted 1T structure, exhibits a large magnetoresistance that depends on the orientation, and its electrical characteristics changes rom semimetallic to insulating as the thickness decreases. Through polarized Raman spectroscopy in combination with transmission electron diffraction, we establish a reliable method to determine the thickness and crystallographic orientation of few-layer WTe2. The Raman spectrum shows a pronounced dependence on the polarization of the excitation laser. We found that the separation between two Raman peaks at ~90 cm-1 and at 80-86 cm-1, depending on thickness, is a reliable fingerprint for determination of the thickness. For determination of the crystallographic orientation, the polarization dependence of the A1 modes, measured with the 632.8-nm excitation, turns out to be the most reliable. We also discovered that the polarization behaviors of some of the Raman peaks depend on the excitation wavelength as well as thickness, indicating a close interplay between the band structure and anisotropic Raman scattering cross section. △ Less

Submitted 12 August, 2016; originally announced August 2016.

Comments: 16 pages, 4 figures

Raman Signatures of Polytypism in Molybdenum Disulfide

Authors: Jae-Ung Lee, Kangwon Kim, Songhee Han, Gyeong Hee Ryu, Zonghoon Lee, Hyeonsik Cheong

Abstract: Since the stacking order sensitively affects various physical properties of layered materials, accurate determination of the stacking order is important for studying the basic properties of these materials as well as for device applications. Because 2H-molybdenum disulfide (MoS2) is most common in nature, most studies so far have focused on 2H-MoS2. However, we found that the 2H, 3R, and mixed sta… ▽ More Since the stacking order sensitively affects various physical properties of layered materials, accurate determination of the stacking order is important for studying the basic properties of these materials as well as for device applications. Because 2H-molybdenum disulfide (MoS2) is most common in nature, most studies so far have focused on 2H-MoS2. However, we found that the 2H, 3R, and mixed stacking sequences exist in few-layer MoS2 exfoliated from natural molybdenite crystals. The crystal structures are confirmed by HR-TEM measurements. The Raman signatures of different polytypes are investigated by using 3 different excitation energies which are non-resonant and resonant with A and C excitons, respectively. The low-frequency breathing and shear modes show distinct differences for each polytype whereas the high-frequency intra-layer modes show little difference. For resonant excitations at 1.96 and 2.81 eV, distinct features are observed which enable determination of the stacking order. △ Less

Submitted 18 January, 2016; originally announced January 2016.

Comments: 22 pages, 6 figures

Anomalous polarization dependence of Raman scattering and crystallographic orientation of black phosphorus

Authors: Jungcheol Kim, Jae-Ung Lee, Jinhwan Lee, Hyo Ju Park, Zonghoon Lee, Changgu Lee, Hyeonsik Cheong

Abstract: We investigated polarization dependence of the Raman modes in black phosphorus (BP) using five different excitation wavelengths. The crystallographic orientation was determined by comparing polarized optical microscopy with high-resolution transmission electron microscope analysis. In polarized Raman spectroscopy, the B2g mode shows the same polarization dependence regardless of the excitation wav… ▽ More We investigated polarization dependence of the Raman modes in black phosphorus (BP) using five different excitation wavelengths. The crystallographic orientation was determined by comparing polarized optical microscopy with high-resolution transmission electron microscope analysis. In polarized Raman spectroscopy, the B2g mode shows the same polarization dependence regardless of the excitation wavelength or the sample thickness. On the other hand, the Ag1 and Ag2 modes show a peculiar polarization behavior that depends on the excitation wavelength and the sample thickness. The thickness dependence can be explained by considering the anisotropic interference effect due to birefringence and dichroism of the BP crystal, but the wavelength dependence cannot be explained. We propose a simple and fail-proof procedure to determine the orientation of a BP crystal by combining polarized Raman scattering with polarized optical microscopy. △ Less

Submitted 9 November, 2015; v1 submitted 12 October, 2015; originally announced October 2015.

Comments: 22+7 pages, 8+5 figures

Journal ref: Nanoscale, 7, 18708-18715 (2015)

Numerical correction of anti-symmetric aberrations in single HRTEM images of weakly scattering 2D-objects

Authors: Ossi Lehtinen, Dorin Geiger, Zhongbo Lee, Michale B. Whitwick, Ming-Wei Chen, Andras Kis, Ute Kaiser

Abstract: Here, we present a numerical post-processing method for removing the effect of anti-symmetric residual aberrations in high-resolution transmission electron microscopy (HRTEM) images of weakly scattering 2D-objects. The method is based on applying the same aberrations with the opposite phase to the Fourier transform of the recorded image intensity and subsequently inverting the Fourier transform. W… ▽ More Here, we present a numerical post-processing method for removing the effect of anti-symmetric residual aberrations in high-resolution transmission electron microscopy (HRTEM) images of weakly scattering 2D-objects. The method is based on applying the same aberrations with the opposite phase to the Fourier transform of the recorded image intensity and subsequently inverting the Fourier transform. We present the theoretical justification of the method and its verification based on simulated images in the case of low-order anti-symmetric aberrations. Ultimately the method is applied to experimental hardware aberration-corrected HRTEM images of single-layer graphene and MoSe2 resulting in images with strongly reduced residual low-order aberrations, and consequently improved interpretability. Alternatively, this method can be used to estimate by trial and error the residual anti-symmetric aberrations in HRTEM images of weakly scattering objects. △ Less

Submitted 16 January, 2015; v1 submitted 8 July, 2014; originally announced July 2014.

Multiply Folded Graphene

Authors: Kwanpyo Kim, Zonghoon Lee, Brad Malone, Kevin T. Chan, Benjamín Alemán, William Regan, Will Gannett, M. F. Crommie, Marvin. L. Cohen, A. Zettl

Abstract: The folding of paper, hide, and woven fabric has been used for millennia to achieve enhanced articulation, curvature, and visual appeal for intrinsically flat, two-dimensional materials. For graphene, an ideal two-dimensional material, folding may transform it to complex shapes with new and distinct properties. Here, we present experimental results that folded structures in graphene, termed grafol… ▽ More The folding of paper, hide, and woven fabric has been used for millennia to achieve enhanced articulation, curvature, and visual appeal for intrinsically flat, two-dimensional materials. For graphene, an ideal two-dimensional material, folding may transform it to complex shapes with new and distinct properties. Here, we present experimental results that folded structures in graphene, termed grafold, exist, and their formations can be controlled by introducing anisotropic surface curvature during graphene synthesis or transfer processes. Using pseudopotential-density functional theory calculations, we also show that double folding modifies the electronic band structure of graphene. Furthermore, we demonstrate the intercalation of C60 into the grafolds. Intercalation or functionalization of the chemically reactive folds further expands grafold's mechanical, chemical, optical, and electronic diversity. △ Less

Submitted 25 May, 2011; v1 submitted 24 December, 2010; originally announced December 2010.

Comments: 29 pages, 10 figures (accepted in Phys. Rev. B)

Journal ref: Phys. Rev. B 83, 245433 (2011)