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Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$
Authors:
Fatima Alarab,
Karol Hricovini,
Berengar Leikert,
Christine Richter,
Thorsten Schmitt,
Michael Sing,
Ralph Claessen,
Ján Minár,
Vladimir N. Strocov
Abstract:
Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-doping) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (…
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Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-doping) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (MES). Thereby, the in-plane dxy-derived bands reduce the embedded electron density, as evidenced by progressive reduction of their Fermi momentum with the Ni concentration, and the out-of-plane dxz/yz-derived bands depopulate, making the MES purely two-dimensional. Furthermore, the Ti and Ni L2,3-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum, and decipher the full spectrum of the VO-induced in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES and in-gap states in Ni-doped SrTiO$_3$ may help development of this material towards its device applications associated with the reduced optical band gap.
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Submitted 19 October, 2023;
originally announced October 2023.
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Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3
Authors:
Teresa Tschirner,
Berengar Leikert,
Felix Kern,
Daniel Wolf,
Axel Lubk,
Martin Kamp,
Kirill Miller,
Fabian Hartmann,
Sven Höfling,
Bernd Büchner,
Joseph Dufouleur,
Marc Gabay,
Michael Sing,
Ralph Claessen,
Louis Veyrat
Abstract:
Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, a…
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Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, also tends to limit the mobility and hence the overall LMR amplitude. An alternative route to achieve large LMR is via non-structural inhomogeneities which do not affect the zero field mobility, like magnetic domains. Here, linear positive magnetoresistance caused by magnetic texture is reported in \ch{LaTiO3}/\ch{SrTiO3} heterostructures. The LMR amplitude reaches up to 6500\% at 9T. This colossal value is understood by the unusual combination of a very high thin film mobility, up to 40 000 cm$^2$/V.s, and a very large coverage of low-mobility regions. These regions correlate with a striped magnetic structure, compatible with a spiral magnetic texture in the \ch{LaTiO3} film, revealed by low temperature Lorentz transmission electron microscopy. These results provide a novel route for the engineering of large-LMR devices.
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Submitted 14 October, 2022;
originally announced October 2022.
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Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen
Authors:
Judith Gabel,
Matthias Pickem,
Philipp Scheiderer,
Lenart Dudy,
Berengar Leikert,
Marius Fuchs,
Martin Stübinger,
Matthias Schmitt,
Julia Küspert,
Giorgio Sangiovanni,
Jan M. Tomczak,
Karsten Held,
Tien-Lin Lee,
Ralph Claessen,
Michael Sing
Abstract:
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that th…
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Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which persist even in an ultrahigh vacuum environment, are shown to severely affect the intrinsic electronic structure of a transition metal oxide film. Their presence leads to the formation of an electronically dead surface layer but also alters the band filling and the electron correlations in the thin films. These findings highlight that it is important to take into account surface apical oxygen or -- mutatis mutandis -- the specific oxygen configuration imposed by a capping layer to predict the behavior of ultrathin films of transition metal oxides near the single unit-cell limit.
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Submitted 22 February, 2022;
originally announced February 2022.
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Hard x-ray angle-resolved photoemission from a buried high-mobility electron system
Authors:
Michael Zapf,
Matthias Schmitt,
Judith Gabel,
Philipp Scheiderer,
Martin Stübinger,
Berengar Leikert,
Giorgio Sangiovanni,
Lenart Dudy,
Sergii Chernov,
Sergey Babenkov,
Dmitry Vasilyev,
Olena Fedchenko,
Katerina Medjanik,
Yury Matveyev,
Andrei Gloskowski,
Christoph Schlueter,
Tien-Lin Lee,
Hans-Joachim Elmers,
Gerd Schönhense,
Michael Sing,
Ralph Claessen
Abstract:
Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by…
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Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO$_3$ due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the $k$ broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively.
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Submitted 20 September, 2022; v1 submitted 28 October, 2021;
originally announced October 2021.
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Hard X-ray photoemission spectroscopy of LaVO$_3$/SrTiO$_3$: Band alignment and electronic reconstruction
Authors:
M. Stübinger,
J. Gabel,
P. Scheiderer,
M. Zapf,
M. Schmitt,
P. Schütz,
B. Leikert,
J. Küspert,
M. Kamp,
P. K. Thakur,
T. -L. Lee,
P. Potapov,
A. Lubk,
B. Büchner,
M. Sing,
R. Claessen
Abstract:
The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer rema…
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The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer remarkable advantages over conventional solar cells. However, experimental data beyond the observation of a thickness-dependent metal-insulator transition is scarce and a profound, microscopic understanding of the electronic properties is still lacking. By means of soft and hard X-ray photoemission spectroscopy as well as resistivity and Hall effect measurements we study the electrical properties, band bending, and band alignment of LaVO$_3$/SrTiO$_3$ heterostructures. We find a critical LaVO$_3$ thickness of five unit cells, confinement of the conducting electrons to exclusively Ti 3$d$ states at the interface, and a potential gradient in the film. From these findings we conclude on electronic reconstruction as the driving mechanism for the formation of the metallic interface in LaVO$_3$/SrTiO$_3$.
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Submitted 26 May, 2021;
originally announced May 2021.
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Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures
Authors:
Berengar Leikert,
Judith Gabel,
Matthias Schmitt,
Martin Stübinger,
Philipp Scheiderer,
Louis Veyrat,
Tien-Lin Lee,
Michael Sing,
Ralph Claessen
Abstract:
Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We…
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Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.
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Submitted 13 April, 2021;
originally announced April 2021.
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Photoemission study on pristine and Ni-doped SrTiO$_{3}$ thin films
Authors:
F. Alarab,
K. Hricovini,
B. Leikert,
L. Nicolai,
M. Fanciulli,
O. Heckmann,
M. Richter,
L. Prušakova,
Z. Jansa,
P. Šutta,
J. Rault,
P. Lefevre,
M. Muntwiller,
R. Claessen,
J. Minár
Abstract:
We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high…
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We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greens's function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings.
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Submitted 25 November, 2020;
originally announced November 2020.
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Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces
Authors:
Patrick Maier,
Fabian Hartmann,
Judith Gabel,
Maximilian Frank,
Silke Kuhn,
Philipp Scheiderer,
Berengar Leikert,
Michael Sing,
Lukas Worschech,
Ralph Claessen,
Sven Höfling
Abstract:
We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off the inherent memory functionality (memristance). For large and small gate voltages a simple non-linear resistance characteristic is observed while a pinched hy…
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We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off the inherent memory functionality (memristance). For large and small gate voltages a simple non-linear resistance characteristic is observed while a pinched hysteresis loop and memristive switching occurs in an intermediate voltage range. The memristance is further controlled by the density of oxygen vacancies, which is tuned by annealing the sample at 300 °C in nitrogen atmosphere. Depending on the annealing time the memristance at zero gate voltage can be switched on and off leading to normally-on and normally-off memristors. The presented device offers reversible and irreversible control of memristive characteristics by gate voltages and annealing, respectively, which may allow to compensate fabrication variabilities of memristors that complicate the realization of large memristor-based neural networks.
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Submitted 13 March, 2017; v1 submitted 17 October, 2016;
originally announced October 2016.
