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Band structure tuning of Heusler compounds revisited: Spin- and momentum-resolved electronic structure analysis of compounds with different band filling
Authors:
S. Chernov,
C. Lidig,
O. Fedchenko,
M. Jourdan,
G. Schönhense,
H. J. Elmers
Abstract:
Spin-filtered time-of-flight photoelectron momentum microscopy reveals a systematic variation of the band structure within a series of highly spin-polarized ferromagnetic Heusler compounds with increasing number of valence electrons (Co2MnGa, Co2MnSi and Co2Fe0.4Mn0.6Si). The positions of the Fermi energy for minority and majority electrons deviate strongly from a simple band-filling model. Photoe…
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Spin-filtered time-of-flight photoelectron momentum microscopy reveals a systematic variation of the band structure within a series of highly spin-polarized ferromagnetic Heusler compounds with increasing number of valence electrons (Co2MnGa, Co2MnSi and Co2Fe0.4Mn0.6Si). The positions of the Fermi energy for minority and majority electrons deviate strongly from a simple band-filling model. Photoexcitation at h$ν$=6.05 eV (4th harmonic of a Ti:sapphire laser) gives access to the spin-polarization texture P(EB,kx,ky) of the bulk bands in a (kx,ky)-range with diameter 1.4Å$^{-1}$ and energies from the Fermi energy EF to a binding energy of EB=2 eV. The minority bands of Co2MnGa cross the Fermi level, inhibiting half-metallicity; the crossing points allow a precise adjustment of experimental and theoretical majority and minority bands, requiring shifts in opposite directions. The top of the minority band lies only 0.15 eV above EF, i.e. Co2MnGa is much closer to being half-metallic than predicted by calculations. For half-metallic Co2MnSi and Co2Fe0.4Mn0.6Si clear minority band gaps are visible, the topmost occupied minority bands lie 0.5 and 0.35 eV below EF, in reasonable agreement with theory; the exchange splitting is significantly smaller than in theory. The comparison of all three compounds uncovers the surprising fact that with increasing number of valence electrons the frontier majority bands (close to EF) exhibit an increasing deficiency in filling, in comparison with the prediction of a DFT calculation. The same trend is visible in comparison with a DMFT calculation. For s-polarized excitation both half-metallic compounds exhibit nearly complete positive spin polarization close to EF, consistent with previous work in literature.
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Submitted 11 October, 2019;
originally announced October 2019.
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Surface resonance of the Heusler half metal Co2MnSi probed by SX-ARPES
Authors:
Christian Lidig,
Jan Minár,
Jürgen Braun,
Hubert Ebert,
Andrei Gloskovskii,
Jonas A. Krieger,
Vladimir Strocov,
Mathias Kläui,
Martin Jourdan
Abstract:
Heusler compounds are promising materials for spintronics with adjustable electronic properties including 100% spin polarization at the Fermi energy. We investigate the electronic states of AlOx capped epitaxial thin films of the ferromagnetic half metal Co2MnSi ex-situ by soft X-ray angular resolved photoemission spectroscopy (SX-ARPES). Good agreement between the experimental SX- ARPES results a…
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Heusler compounds are promising materials for spintronics with adjustable electronic properties including 100% spin polarization at the Fermi energy. We investigate the electronic states of AlOx capped epitaxial thin films of the ferromagnetic half metal Co2MnSi ex-situ by soft X-ray angular resolved photoemission spectroscopy (SX-ARPES). Good agreement between the experimental SX- ARPES results and photoemission calculations including surface effects was obtained. In particular, we observed in line with our calculations a large photoemission intensity at the center of the Brillouin zone, which does not originate from bulk states, but from a surface resonance. This provides strong evidence for the validity of the previously proposed model based on this resonance, which was applied to explain the huge spin polarization of Co2MnSi observed by angular-integrating UV-photoemission spectroscopy.
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Submitted 28 March, 2019;
originally announced March 2019.
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Interface spin polarization of the Heusler compound Co2MnSi probed by unidirectional spin Hall magnetoresistance
Authors:
C. Lidig,
J. Cramer,
L. Weißhoff,
T. R. Thomas,
T. Kessler,
M. Kläui,
M. Jourdan
Abstract:
Many Heusler compounds are predicted to be ferromagnetic half metals in the bulk, which makes them promising compounds for spintronics. However, for devices the transport spin polarization at specific interfaces requires optimization. We show that investigations of the unidirectional magnetoresistance provide an alternative approach to access this quantity. Based on a Wheatstone-bridge design we p…
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Many Heusler compounds are predicted to be ferromagnetic half metals in the bulk, which makes them promising compounds for spintronics. However, for devices the transport spin polarization at specific interfaces requires optimization. We show that investigations of the unidirectional magnetoresistance provide an alternative approach to access this quantity. Based on a Wheatstone-bridge design we probed the unidirectional magnetoresistance of Co2MnSi/(Ag, Cu, or Cr)(0.5 nm)/Pt (or Ta) multilayers and separate the spin-dependent unidirectional spin Hall magnetoresistance from other contributions. We demonstrated that by the insertion of a thin epitaxial Ag layer the spin-dependent contribution is doubled corresponding to a significant increase of the transport spin polarization, which is discussed in the framework of highly spin polarized interface states.
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Submitted 27 March, 2019; v1 submitted 12 November, 2018;
originally announced November 2018.
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Signature of a highly spin polarized resonance state at Co2MnSi(001)/Ag(001) interfaces
Authors:
Christian Lidig,
Jan Minár,
Jürgen Braun,
Hubert Ebert,
Andrei Gloskovskii,
Alexander Kronenberg,
Mathias Kläui,
Martin Jourdan
Abstract:
We investigated interfaces of halfmetallic Co2MnSi(100) Heusler thin films with Ag(100), Cr(100), Cu and Al layers relevant for spin valves by high energy x-ray photoemission spectroscopy (HAXPES). Experiments on Co2MnSi samples with an Ag(100) interface showed a characteristic spectral shoulder feature close to the Fermi edge, which is strongly diminished or suppressed at Co2MnSi (100) interfaces…
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We investigated interfaces of halfmetallic Co2MnSi(100) Heusler thin films with Ag(100), Cr(100), Cu and Al layers relevant for spin valves by high energy x-ray photoemission spectroscopy (HAXPES). Experiments on Co2MnSi samples with an Ag(100) interface showed a characteristic spectral shoulder feature close to the Fermi edge, which is strongly diminished or suppressed at Co2MnSi (100) interfaces with the other metallic layers. This feature is found to be directly related to the Co2MnSi(100) layer, as reflected by control experiments with reference non-magnetic films, i.e. without Heusler layer. By comparison with HAXPES calculations, the shoulder feature is identified as originating from an interface state related to a highly spin polarized surface resonance of Co2MnSi (100).
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Submitted 20 February, 2018;
originally announced February 2018.
