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Ultra-Highly Linear Magnetic Flux-to-Voltage response in Proximity-based Mesoscopic bi-SQUIDs
Authors:
Giorgio De Simoni,
Lorenzo Cassola,
Nadia Ligato,
Giuseppe C. Tettamanzi,
Francesco Giazotto
Abstract:
Superconducting double-loop interferometers (bi-SQUIDs) have been introduced to produce magnetic flux sensors specifically designed to exhibit ultra-highly linear voltage response as a function of the magnetic flux. These devices are very important for the quantum sensing and for signal processing of signals oscillating at the radio-frequencies range of the electromagnetic spectrum. Here, we repor…
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Superconducting double-loop interferometers (bi-SQUIDs) have been introduced to produce magnetic flux sensors specifically designed to exhibit ultra-highly linear voltage response as a function of the magnetic flux. These devices are very important for the quantum sensing and for signal processing of signals oscillating at the radio-frequencies range of the electromagnetic spectrum. Here, we report an Al double-loop bi-SQUIDs based on proximitized mesoscopic Cu Josephson junctions. Such a scheme provides an alternative fabrication approach to conventional tunnel junction-based interferometers, where the junction characteristics and, consequently, the magnetic flux-to-voltage and magnetic flux-to-critical current device response can be largely and easily tailored by the geometry of the metallic weak-links. We discuss the performance of such sensors by showing a full characterization of the device switching current and voltage drop \textit{vs.} magnetic flux for temperatures of operation ranging from 30 mK to $\sim 1$ K. The figure of merit of the transfer function and of the total harmonic distortion are also discussed. The latter provides an estimate of the linearity of the flux-to-voltage device response, which obtained values as large as 45 dB. Such a result let us foresee a performance already on pair with that achieved in conventional tunnel junction-based bi-SQUIDs arrays composed of hundreds of interferometers.
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Submitted 17 December, 2021;
originally announced December 2021.
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Superconducting spintronic tunnel diode
Authors:
E. Strambini,
M. Spies,
N. Ligato,
S. Ilic,
M. Rouco,
C. G. Orellana,
M. Ilyn,
C. Rogero,
F. S. Bergeret,
J. S. Moodera,
P. Virtanen,
T. T. Heikkilä,
F. Giazotto
Abstract:
Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel diode based on the strong spin filtering and splitting generated by an EuS thin film between a superconducting Al and a normal metal Cu layer. The Cu/EuS/Al tu…
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Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel diode based on the strong spin filtering and splitting generated by an EuS thin film between a superconducting Al and a normal metal Cu layer. The Cu/EuS/Al tunnel junction achieves a large rectification (up to $\sim40$\%) already for a small voltage bias ($\sim 200$ $μ$V) thanks to the small energy scale of the system: the Al superconducting gap. With the help of an analytical theoretical model we can link the maximum rectification to the spin polarization of the barrier and describe the quasi-ideal Schottky-diode behavior of the junction. This cryogenic spintronic rectifier is promising for the application in highly-sensitive radiation detection for which two different configurations are evaluated. In addition, the superconducting diode may pave the way for future low-dissipation and fast superconducting electronics.
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Submitted 9 November, 2023; v1 submitted 2 September, 2021;
originally announced September 2021.
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Thermal superconducting quantum interference proximity transistor
Authors:
Nadia Ligato,
Federico Paolucci,
Elia Strambini,
Francesco Giazotto
Abstract:
Superconductors are known to be excellent thermal insulators at low temperature owing to the presence of the energy gap in their density of states (DOS). In this context, the superconducting \textit{proximity effect} allows to tune the local DOS of a metallic wire by controlling the phase bias ($\varphi$) imposed across it. As a result, the wire thermal conductance can be tuned over several orders…
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Superconductors are known to be excellent thermal insulators at low temperature owing to the presence of the energy gap in their density of states (DOS). In this context, the superconducting \textit{proximity effect} allows to tune the local DOS of a metallic wire by controlling the phase bias ($\varphi$) imposed across it. As a result, the wire thermal conductance can be tuned over several orders of magnitude by phase manipulation. Despite strong implications in nanoscale heat management, experimental proofs of phase-driven control of thermal transport in superconducting proximitized nanostructures are still very limited. Here, we report the experimental demonstration of efficient heat current control by phase tuning the superconducting proximity effect. This is achieved by exploiting the magnetic flux-driven manipulation of the DOS of a quasi one-dimensional aluminum nanowire forming a weal-link embedded in a superconducting ring. Our thermal superconducting quantum interference transistor (T-SQUIPT) shows temperature modulations up to $\sim 16$ mK yielding a temperature-to-flux transfer function as large as $\sim 60$ mK/$Φ_0$. Yet, phase-slip transitions occurring in the nanowire Josephson junction induce a hysteretic dependence of its local DOS on the direction of the applied magnetic field. Thus, we also prove the operation of the T-SQUIPT as a phase-tunable \textit{thermal memory}, where the information is encoded in the temperature of the metallic mesoscopic island. Besides their relevance in quantum physics, our results are pivotal for the design of innovative coherent caloritronics devices such as heat valves and temperature amplifiers suitable for thermal logic architectures.
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Submitted 18 April, 2022; v1 submitted 19 July, 2021;
originally announced July 2021.
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Gate-control of the current-flux relation of a Josephson quantum interferometer based on proximitized metallic nanojuntions
Authors:
Giorgio De Simoni,
Sebastiano Battisti,
Nadia Ligato,
Maria Teresa Mercaldo,
Mario Cuoco,
Francesco Giazotto
Abstract:
We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximitized Cu mesoscopic weak-links. The latter behave analogously to genuine superconducting metals in terms of the response to electrostatic gating, and provide a good performance in terms of current-modulation visibility. We show that, through the applicati…
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We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximitized Cu mesoscopic weak-links. The latter behave analogously to genuine superconducting metals in terms of the response to electrostatic gating, and provide a good performance in terms of current-modulation visibility. We show that, through the application of a static gate voltage, we are able to modify the interferometer current-flux relation in a fashion which seems compatible with the introduction of $π$-channels within the gated weak-link. Our results suggest that the microscopic mechanism at the origin of the suppression of the switching current in the interferometer is apparently phase coherent, resulting in an overall damping of the superconducting phase rigidity. We finally tackle the performance of the interferometer in terms of responsivity to magnetic flux variations in the dissipative regime, and discuss the practical relevance of gated proximity-based all-metallic SQUIDs for magnetometry at the nanoscale.
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Submitted 8 June, 2021; v1 submitted 7 June, 2021;
originally announced June 2021.
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Coexistence of superconductivity and spin-splitting fields in superconductor/ferromagnetic insulator bilayers of arbitrary thickness
Authors:
Alberto Hijano,
Stefan Ilić,
Mikel Rouco,
Carmen González-Orellana,
Maxim Ilyn,
Celia Rogero,
P. Virtanen,
T. T. Heikkilä,
S. Khorshidian,
M. Spies,
N. Ligato,
F. Giazotto,
E. Strambini,
F. Sebastián Bergeret
Abstract:
Ferromagnetic insulators can induce a strong exchange field in an adjacent superconductor via the magnetic proximity effect. This manifests as spin-splitting of the BCS density of states of the superconductor, an important ingredient for numerous superconducting spintronics applications and the realization of Majorana fermions. A crucial parameter that determines the magnitude of the induced spin-…
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Ferromagnetic insulators can induce a strong exchange field in an adjacent superconductor via the magnetic proximity effect. This manifests as spin-splitting of the BCS density of states of the superconductor, an important ingredient for numerous superconducting spintronics applications and the realization of Majorana fermions. A crucial parameter that determines the magnitude of the induced spin-splitting in FI/S bilayers is the thickness of the S layer $d$: In very thin samples, the superconductivity is suppressed by the strong magnetism. By contrast, in very thick samples, the spin splitting is absent at distances away from the interface. In this work, we calculate the density of states and critical field of FI/S bilayers of arbitrary thickness. From here, we determine the range of parameters of interest for applications, where the exchange field and superconductivity coexist. We compare our theory with the tunneling spectroscopy measurements in several EuS/Al/AlO$_x$/Al samples. If the Al film in contact with the EuS is thinner than a certain critical value, we do not observe superconductivity, whereas, in thicker samples, we find evidence of a first-order phase transition induced by an external field. The complete transition is preceded by a regime in which normal and superconducting regions coexist. We attribute this mixed phase to inhomogeneities of the Al film thickness and the presence of superparamagnetic grains at the EuS/Al interface with different switching fields. Our results demonstrate on the one hand, the important role of the S layer thickness, which is particularly relevant for the fabrication of high-quality samples suitable for applications. On the other hand, the agreement between theory and experiment demonstrates the accuracy of our theory, which, originally developed for homogeneous situations, is generalized to highly inhomogeneous systems.
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Submitted 26 May, 2021; v1 submitted 31 December, 2020;
originally announced December 2020.
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Fully superconducting Josephson bolometers for gigahertz astronomy
Authors:
Federico Paolucci,
Nadia Ligato,
Gaia Germanese,
Vittorio Buccheri,
Francesco Giazotto
Abstract:
The origin and the evolution of the universe are concealed in the evanescent diffuse extragalactic background radiation (DEBRA). To reveal these signals, the development of innovative ultra-sensitive bolometers operating in the gigahertz band is required. Here, we review the design and experimental realization of two bias-current-tunable sensors based on one dimensional fully superconducting Josep…
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The origin and the evolution of the universe are concealed in the evanescent diffuse extragalactic background radiation (DEBRA). To reveal these signals, the development of innovative ultra-sensitive bolometers operating in the gigahertz band is required. Here, we review the design and experimental realization of two bias-current-tunable sensors based on one dimensional fully superconducting Josephson junctions: the nanoscale transition edge sensor (nano-TES) and the Josephson escape sensor (JES). In particular, we cover the theoretical basis of the sensors operation, the device fabrication, their experimental electronic and thermal characterization, and the deduced detection performance. Indeed, the nano-TES promises a state-of-the-art noise equivalent power (NEP) of about $5 \times 10^{-20}$ W$/\sqrt{\text{Hz}}$, while the JES is expected to show an unprecedented NEP of the order of $10^{-25}$ W$/\sqrt{\text{Hz}}$. Therefore, the nano-TES and JES are strong candidates to push radio astronomy to the next level.
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Submitted 15 January, 2021; v1 submitted 17 November, 2020;
originally announced November 2020.
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Development of highly sensitive nanoscale transition edge sensors for gigahertz astronomy and dark matter search
Authors:
Federico Paolucci,
Vittorio Buccheri,
Gaia Germanese,
Nadia Ligato,
Riccardo Paoletti,
Giovanni Signorelli,
Massimiliano Bitossi,
Paolo Spagnolo,
Paolo Falferi,
Mauro Rajteri,
Claudio Gatti,
Francesco Giazotto
Abstract:
Terahertz and sub-terahertz band detection has a key role both in fundamental interactions physics and technological applications, such as medical imaging, industrial quality control and homeland security. In particular, transition edge sensors (TESs) and kinetic inductance detectors (KIDs) are the most employed bolometers and calorimeters in the THz and sub-THz band for astrophysics and astropart…
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Terahertz and sub-terahertz band detection has a key role both in fundamental interactions physics and technological applications, such as medical imaging, industrial quality control and homeland security. In particular, transition edge sensors (TESs) and kinetic inductance detectors (KIDs) are the most employed bolometers and calorimeters in the THz and sub-THz band for astrophysics and astroparticles research. Here, we present the electronic, thermal and spectral characterization of an aluminum/copper bilayer sensing structure that, thanks to its thermal properties and a simple miniaturized design, could be considered a perfect candidate to realize an extremely sensitive class of nanoscale TES (nano-TES) for the giga-therahertz band. Indeed, thanks to the reduced dimensionality of the active region and the efficient Andreev mirror (AM) heat confinement, our devices are predicted to reach state-of-the-art TES performance. In particular, as a bolometer the nano-TES is expected to have a noise equivalent power (NEP) of $5\times10^{-20}$ W/$\sqrt{\mathrm{Hz}}$ and a relaxation time of $\sim 10$ ns for the sub-THz band, typical of cosmic microwave background studies. When operated as single-photon sensor, the devices are expected to show a remarkable frequency resolution of 100 GHz, pointing towards the necessary energy sensitivity requested in laboratory axion search experiments. Finally, different multiplexing schemes are proposed and sized for imaging applications.
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Submitted 19 November, 2020; v1 submitted 16 July, 2020;
originally announced July 2020.
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Preliminary demonstration of a persistent Josephson phase-slip memory cell with topological protection
Authors:
N. Ligato,
E. Strambini,
F. Paolucci,
F. Giazotto
Abstract:
Superconducting computing promises enhanced computational power in both classical and quantum approaches. Yet, scalable and fast superconducting memories are not implemented. Here, we propose a fully superconducting memory cell based on the hysteretic phase-slip transition existing in long aluminum nanowire Josephson junctions. Embraced by a superconducting ring, the memory cell codifies the logic…
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Superconducting computing promises enhanced computational power in both classical and quantum approaches. Yet, scalable and fast superconducting memories are not implemented. Here, we propose a fully superconducting memory cell based on the hysteretic phase-slip transition existing in long aluminum nanowire Josephson junctions. Embraced by a superconducting ring, the memory cell codifies the logic state in the direction of the circulating persistent current, as commonly defined in flux-based superconducting memories. But, unlike the latter, the hysteresis here is a consequence of the phase-slip occurring in the long weak link and associated to the topological transition of its superconducting gap. This disentangle our memory scheme from the large-inductance constraint, thus enabling its miniaturization. Moreover, the strong activation energy for phase-slip nucleation provides a robust topological protection against stochastic phase-slips and magnetic-flux noise. These properties make the Josephson phase-slip memory a promising solution for advanced superconducting classical logic architectures or flux qubits.
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Submitted 2 September, 2021; v1 submitted 28 May, 2020;
originally announced May 2020.
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Vanadium gate-controlled Josephson half-wave nanorectifier
Authors:
C. Puglia,
G. De Simoni,
N. Ligato,
F. Giazotto
Abstract:
Recently, the possibility to tune the critical current of conventional metallic superconductors via electrostatic gating was shown in wires, Josephson weak-links and superconductor-normal metal-superconductor junctions. Here we exploit such a technique to demonstrate a gate-controlled vanadium-based Dayem nano-bridge operated as a \emph{half-wave} rectifier at $3$ K. Our devices exploit the gate-d…
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Recently, the possibility to tune the critical current of conventional metallic superconductors via electrostatic gating was shown in wires, Josephson weak-links and superconductor-normal metal-superconductor junctions. Here we exploit such a technique to demonstrate a gate-controlled vanadium-based Dayem nano-bridge operated as a \emph{half-wave} rectifier at $3$ K. Our devices exploit the gate-driven modulation of the critical current of the Josephson junction, and the resulting steep variation of its normal-state resistance, to convert an AC signal applied to the gate electrode into a DC one across the junction. All-metallic superconducting gated rectifiers could provide the enabling technology to realize tunable photon detectors and diodes useful for superconducting electronics circuitry.
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Submitted 12 May, 2020;
originally announced May 2020.
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Hypersensitive tunable Josephson escape sensor for gigahertz astronomy
Authors:
Federico Paolucci,
Nadia Ligato,
Vittorio Buccheri,
Gaia Germanese,
Pauli Virtanen,
Francesco Giazotto
Abstract:
Sensitive photon detection in the gigahertz band constitutes the cornerstone to study different phenomena in astronomy, such as radio burst sources, galaxy formation, cosmic microwave background, axions, comets, gigahertz-peaked spectrum radio sources and supermassive black holes. Nowadays, state of the art detectors for astrophysics are mainly based on transition edge sensors and kinetic inductan…
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Sensitive photon detection in the gigahertz band constitutes the cornerstone to study different phenomena in astronomy, such as radio burst sources, galaxy formation, cosmic microwave background, axions, comets, gigahertz-peaked spectrum radio sources and supermassive black holes. Nowadays, state of the art detectors for astrophysics are mainly based on transition edge sensors and kinetic inductance detectors. Overall, most sensible nanobolometers so far are superconducting detectors showing a noise equivalent power (NEP) as low as 2x10-20 W/Hz1/2. Yet, fast thermometry at the nanoscale was demonstrated as well with Josephson junctions through switching current measurements. In general, detection performance are set by the fabrication process and limited by used materials. Here, we conceive and demonstrate an innovative tunable Josephson escape sensor (JES) based on the precise current control of the temperature dependence of a fully superconducting one-dimensional nanowire Josephson junction. The JES might be at the core of future hypersensitive in situ-tunable bolometers or single-photon detectors working in the gigahertz regime. Operated as a bolometer the JES points to a thermal fluctuation noise (TFN) NEP_TFN 1x10-25 W/Hz1/2, which as a calorimeter bounds the frequency resolution above 2 GHz, and resolving power below 40 at 50 GHz, as deduced from the experimental data. Beyond the obvious applications in advanced ground-based and space telescopes for gigahertz astronomy, the JES might represent a breakthrough in several fields of quantum technologies ranging from subTHz communications and quantum computing to cryptography and quantum key distribution.
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Submitted 22 September, 2020; v1 submitted 12 March, 2020;
originally announced March 2020.
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A Josephson phase battery
Authors:
E. Strambini,
A. Iorio,
O. Durante,
R. Citro,
C. Sanz-Fernández,
C. Guarcello,
I. V. Tokatly,
A. Braggio,
M. Rocci,
N. Ligato,
V. Zannier,
L. Sorba,
F. S. Bergeret,
F. Giazotto
Abstract:
A battery is a classical apparatus which converts a chemical reaction into a persistent voltage bias able to power electronic circuits. Similarly, a phase battery is a quantum equipment which provides a persistent phase bias to the wave function of a quantum circuit. It represents a key element for quantum technologies based on quantum coherence. Unlike the voltage batteries, a phase battery has n…
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A battery is a classical apparatus which converts a chemical reaction into a persistent voltage bias able to power electronic circuits. Similarly, a phase battery is a quantum equipment which provides a persistent phase bias to the wave function of a quantum circuit. It represents a key element for quantum technologies based on quantum coherence. Unlike the voltage batteries, a phase battery has not been implemented so far, mainly because of the natural rigidity of the quantum phase that, in typical quantum circuits, is imposed by the parity and time-reversal symmetry constrains. Here we report on the first experimental realization of a phase battery in a hybrid superconducting circuit. It consists of an n-doped InAs nanowire with unpaired-spin surface states and proximitized by Al superconducting leads. We find that the ferromagnetic polarization of the unpaired-spin states is efficiently converted into a persistent phase bias $\varphi_0$ across the wire, leading to the anomalous Josephson effect. By applying an external in-plane magnetic field a continuous tuning of $\varphi_0$ is achieved. This allows the charging and discharging of the quantum phase battery and reveals the symmetries of the anomalous Josephson effect predicted by our theoretical model. Our results demonstrate how the combined action of spin-orbit coupling and exchange interaction breaks the phase rigidity of the system inducing a strong coupling between charge, spin and superconducting phase. This interplay opens avenues for topological quantum technologies, superconducting circuitry and advanced schemes of circuit quantum electrodynamics.}
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Submitted 20 June, 2020; v1 submitted 10 January, 2020;
originally announced January 2020.
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Field-Effect Control of Metallic Superconducting Systems
Authors:
Federico Paolucci,
Giorgio De Simoni,
Paolo Solinas,
Elia Strambini,
Claudio Puglia,
Nadia Ligato,
Francesco Giazotto
Abstract:
Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the possibility of modulating the conductivity of metallic thin films and the critical temperature of conventional superconductors. All these experimental features…
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Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the possibility of modulating the conductivity of metallic thin films and the critical temperature of conventional superconductors. All these experimental features have been explained by simple charge accumulation/depletion. In 2018, electric field control of supercurrent in conventional metallic superconductors has been demonstrated in a range of electric fields where the induced variation of charge carrier concentration in metals is negligibly small. In fact, no changes of normal state resistance and superconducting critical temperature were reported. Here, we review the experimental results obtained in the realization of field-effect metallic superconducting devices exploiting this unexplained phenomenon. We will start by presenting the seminal results on superconducting BCS wires and nano-constriction Josephson junctions (Dayem bridges) made of different materials, such as titanium, aluminum and vanadium. Then, we show the mastering of the Josephson supercurrent in superconductor-normal metal-superconductor proximity transistors suggesting that the presence of induced superconducting correlations are enough to see this unconventional field-effect. Later, we present the control of the interference pattern in a superconducting quantum interference device indicating the coupling of the electric field with thesuperconducting phase. Among the possible applications of the presented phenomenology, we conclude this review by proposing some devices that may represent a breakthrough in superconducting quantum and classical computation.
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Submitted 7 January, 2020; v1 submitted 27 September, 2019;
originally announced September 2019.
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Magnetotransport Experiments on Fully Metallic Superconducting Dayem Bridge Field-Effect Transistors
Authors:
Federico Paolucci,
Giorgio De Simoni,
Paolo Solinas,
Elia Strambini,
Nadia Ligato,
Pauli Virtanen,
Alessandro Braggio,
Francesco Giazotto
Abstract:
In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature. Recent conventional gating experiments on superconducting metal nano-structures showed full suppression of the critical current without variations of the normal sta…
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In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature. Recent conventional gating experiments on superconducting metal nano-structures showed full suppression of the critical current without variations of the normal state resistance and the critical temperature. These results still miss a microscopic explanation. In this article, we show a complete set of gating experiments on Ti-based superconducting Dayem bridges and a suggested classical thermodynamic model which seems to account for several of our experimental findings. In particular, zero-bias resistance and critical current IC measurements highlight the following: the suppression of IC with both polarities of gate voltage, the surface nature of the effect, the critical temperature independence from the electric field and the gate-induced growth of a sub-gap dissipative component. In addition, the temperature dependence of the Josephson critical current seems to show the transition from the ballistic Kulik-Omelyanchuck behavior to the Ambegaokar-Baratoff tunnel-like characteristic by increasing the electric field. Furthermore, the IC suppression persists in the presence of sizeable perpendicular-to-plane magnetic fields. We propose a classical thermodynamic model able to describe some of the experimental observations of the present and previous works. Above all, the model grabs the bipolar electric field induced suppression of IC and the emergence of a sub-gap dissipative component near full suppression of the supercurrent. Finally, applications employing the discussed effect are proposed.
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Submitted 17 December, 2018; v1 submitted 1 August, 2018;
originally announced August 2018.
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High operating temperature in V-based superconducting quantum interference proximity transistors
Authors:
Nadia Ligato,
Giampiero Marchegiani,
Pauli Virtanen,
Elia Strambini,
Francesco Giazotto
Abstract:
Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52$\ \textrm{mV}/Φ_0$) and flux-to-current (above 12$\ \textrm{nA}/Φ_0$) transfer functions, with the best estimated flux sensitiv…
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Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52$\ \textrm{mV}/Φ_0$) and flux-to-current (above 12$\ \textrm{nA}/Φ_0$) transfer functions, with the best estimated flux sensitivity $\sim$2.6$\ μΦ_0/\sqrt{\textrm{Hz}}$ reached under fixed voltage bias, where $Φ_0$ is the flux quantum. The interferometers operate up to $T_\textrm{bath}\simeq$ 2 $ \textrm{K}$, with an improvement of 70$\%$ of the maximal operating temperature with respect to early SQUIPTs design. The main features of the V-based SQUIPT are described within a simplified theoretical model. Our results open the way to the realization of SQUIPTs that take advantage of the use of higher-gap superconductors for ultra-sensitive nanoscale applications that operate at temperatures well above 1 K.
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Submitted 5 September, 2017; v1 submitted 5 April, 2017;
originally announced April 2017.
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InAs nanowire superconducting tunnel junctions: spectroscopy, thermometry and nanorefrigeration
Authors:
Jaakko Mastomäki,
Stefano Roddaro,
Mirko Rocci,
Valentina Zannier,
Daniele Ercolani,
Lucia Sorba,
Ilari J. Maasilta,
Nadia Ligato,
Antonio Fornieri,
Elia Strambini,
Francesco Giazotto
Abstract:
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with…
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We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with the BCS theoretical expectations of a superconducting tunnel junction. The studied devices combine small-scale tunnel contacts working as thermometers as well as larger electrodes that provide a proof-of-principle active {\em cooling} of the electron distribution in the nanowire. A peak refrigeration of about $δT = 10\,{\rm mK}$ is achieved at a bath temperature $T_{bath}\approx250-350\,{\rm mK}$ in our prototype devices. This method opens important perspectives for the investigation of thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration.
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Submitted 8 November, 2016;
originally announced November 2016.
