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Superparamagnetic dwell times and tuning of switching rates in perpendicular CoFeB/MgO/CoFeB tunnel junctions
Authors:
G. Reiss,
J. Ludwig,
K. Rott
Abstract:
Thin electrodes of magnetic tunnel junctions can show superparamagnetism at surprisingly low temperature. We analysed their thermally induced switching for varying temperature, magnetic and electric field. Although the dwell times follow an Arrhenius law, they are orders of magnitude too small compared to a model of single domain activation. Including entropic effects removes this inconsistency an…
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Thin electrodes of magnetic tunnel junctions can show superparamagnetism at surprisingly low temperature. We analysed their thermally induced switching for varying temperature, magnetic and electric field. Although the dwell times follow an Arrhenius law, they are orders of magnitude too small compared to a model of single domain activation. Including entropic effects removes this inconsistency and leads to a magnetic activation volume much smaller than that of the electrode. Comparing data for varying barrier thickness then allows to separate the impact of Zeman energy, spin-transfer-torque and voltage induced anisotropy change on the dwell times. Based on these results, we demonstrate a tuning of the switching rates by combining magnetic and electric fields, which opens a path for their application in noisy neural networks.
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Submitted 20 September, 2019; v1 submitted 6 August, 2019;
originally announced August 2019.
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Magnetic field mixing and splitting of bright and dark excitons in monolayer MoSe2
Authors:
Zhengguang Lu,
Daniel Rhodes,
Zhipeng Li,
Dinh Van Tuan,
Yuxuan Jiang,
Jonathan Ludwig,
Zhigang Jiang,
Zhen Lian,
Su-Fei Shi,
James Hone,
Hanan Dery,
Dmitry Smirnov
Abstract:
Monolayers of semiconducting transition metal dichalcogenides (TMDCs) with unique spin-valley contrasting properties and remarkably strong excitonic effects continue to be a subject of intense research interests. These model 2D semiconductors feature two fundamental intravalley excitons species - optically accessible ' bright' excitons with anti-parallel spins and optically inactive 'dark' exciton…
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Monolayers of semiconducting transition metal dichalcogenides (TMDCs) with unique spin-valley contrasting properties and remarkably strong excitonic effects continue to be a subject of intense research interests. These model 2D semiconductors feature two fundamental intravalley excitons species - optically accessible ' bright' excitons with anti-parallel spins and optically inactive 'dark' excitons with parallel spins. For applications exploiting radiative recombination of bright excitons or long lifetime dark excitons, it is essential to understand the radiative character of the exciton ground state and establish the energy separation between the lowest energy bright and dark excitons. Here, we report a direct spectroscopic measure of dark excitons in monolayer MoSe$_2$ encapsulated in hexagonal boron nitride. By applying strong in-plane magnetic field, we induce mixing and splitting of bright and dark exciton branches, which enables an accurate spectroscopic determination of their energies. We confirm the bright character of the exciton ground state separated by a 1.5~meV gap from the higher energy dark exciton state, much smaller compared to the previous theoretical expectations. These findings provide critical information for further improvement of the accurate theoretical description of TMDCs electronic structure.
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Submitted 24 May, 2019;
originally announced May 2019.
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Observation of cyclotron antiresonance in the topological insulator Bi2Te3
Authors:
S. V. Dordevic,
Hechang Lei,
C. Petrovic,
J. Ludwig,
Z. Q. Li,
D. Smirnov
Abstract:
We report on the experimental observation of a cyclotron antiresonance in a canonical 3D topological insulator Bi$_2$Te$_3$. Magneto-reflectance response of single crystal Bi$_2$Te$_3$ was studied in 18 Tesla magnetic field, and compared to other topological insulators studied before, the main spectral feature is inverted. We refer to it as an antiresonance. In order to describe this unconventiona…
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We report on the experimental observation of a cyclotron antiresonance in a canonical 3D topological insulator Bi$_2$Te$_3$. Magneto-reflectance response of single crystal Bi$_2$Te$_3$ was studied in 18 Tesla magnetic field, and compared to other topological insulators studied before, the main spectral feature is inverted. We refer to it as an antiresonance. In order to describe this unconventional behavior we propose the idea of an imaginary cyclotron resonance frequency, which on the other hand indicates that the form of the Lorentz force that magnetic field exerts on charge carriers takes an unconventional form.
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Submitted 25 September, 2018;
originally announced September 2018.
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Chiral Landau levels in Weyl semimetal NbAs with multiple topological carriers
Authors:
Xiang Yuan,
Zhongbo Yan,
Chaoyu Song,
Mengyao Zhang,
Zhilin Li,
Cheng Zhang,
Yanwen Liu,
Weiyi Wang,
Minhao Zhao,
Zehao Lin,
Tian Xie,
Jonathan Ludwig,
Yuxuan Jiang,
Xiaoxing Zhang,
Cui Shang,
Zefang Ye,
Jiaxiang Wang,
Feng Chen,
Zhengcai Xia,
Dmitry Smirnov,
Xiaolong Chen,
Zhong Wang,
Hugen Yan,
Faxian Xiu
Abstract:
Recently, Weyl semimetals have been experimentally discovered in both inversion-symmetry-breaking and time-reversal-symmetry-breaking crystals. The non-trivial topology in Weyl semimetals can manifest itself with exotic phenomena which have been extensively investigated by photoemission and transport measurements. Despite the numerous experimental efforts on Fermi arcs and chiral anomaly, the exis…
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Recently, Weyl semimetals have been experimentally discovered in both inversion-symmetry-breaking and time-reversal-symmetry-breaking crystals. The non-trivial topology in Weyl semimetals can manifest itself with exotic phenomena which have been extensively investigated by photoemission and transport measurements. Despite the numerous experimental efforts on Fermi arcs and chiral anomaly, the existence of unconventional zeroth Landau levels, as a unique hallmark of Weyl fermions which is highly related to chiral anomaly, remains elusive owing to the stringent experimental requirements. Here, we report the magneto-optical study of Landau quantization in Weyl semimetal NbAs. High magnetic fields drive the system towards the quantum limit which leads to the observation of zeroth chiral Landau levels in two inequivalent Weyl nodes. As compared to other Landau levels, the zeroth chiral Landau level exhibits a distinct linear dispersion in z momentum direction and allows the optical transitions without the limitation of zero z momentum or square root of magnetic field evolution. The magnetic field dependence of the zeroth Landau levels further verifies the predicted particle-hole asymmetry of the Weyl cones. Meanwhile, the optical transitions from the normal Landau levels exhibit the coexistence of multiple carriers including an unexpected massive Dirac fermion, pointing to a more complex topological nature in inversion-symmetry-breaking Weyl semimetals. Our results provide insights into the Landau quantization of Weyl fermions and demonstrate an effective tool for studying complex topological systems.
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Submitted 10 May, 2018;
originally announced May 2018.
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Temperature-driven massless Kane fermions in HgCdTe crystals: verification of universal velocity and rest-mass description
Authors:
F. Teppe,
M. Marcinkiewicz,
S. S. Krishtopenko,
S. Ruffenach,
C. Consejo,
A. M. Kadykov,
W. Desrat,
D. But,
W. Knap,
J. Ludwig,
S. Moon,
D. Smirnov,
M. Orlita,
Z. Jiang,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii
Abstract:
It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously…
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It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying either the cadmium content or temperature. At the critical concentration or temperature, the bandgap, Eg, collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest-mass of the Dirac-like Kane fermions, m changes sign at the critical temperature, while their velocity, c remains constant. The relation Eg = 2mc2 with the universal value of c = (1.07 +- 0.05)10x6 m/s remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Dirac-like Kane fermions in HgCdTe.
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Submitted 18 February, 2016;
originally announced February 2016.
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Titanium Nitride as a Seed Layer for Heusler Compounds
Authors:
Alessia Niesen,
Manuel Glas,
Jana Ludwig,
Roshnee Sahoo,
Daniel Ebke,
Elke Arenholz,
Jan-Michael Schmalhorst,
Günter Reiss
Abstract:
Titanium nitride (TiN) shows low resistivity at room temperature, high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by X-ray diffraction and 4-terminal transport measurements. Element specific X-ray absorption spectroscopy revea…
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Titanium nitride (TiN) shows low resistivity at room temperature, high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by X-ray diffraction and 4-terminal transport measurements. Element specific X-ray absorption spectroscopy revealed pure TiN in the bulk. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device (SQUID) and anomalous Hall effect (AHE) for Mn2.45Ga. Magneto optical Kerr effect (MOKE) measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature.
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Submitted 28 January, 2016; v1 submitted 21 October, 2015;
originally announced October 2015.
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High Photoresponsivity and Short Photo Response Times in Few-Layered WSe$_2$ Transistors
Authors:
Nihar R. Pradhan,
Jonathan Ludwig,
Zhengguang Lu,
Daniel Rhodes,
Michael M. Bishop,
Komalavalli Thirunavukkuarasu,
Stephen A. McGill,
Dmitry Smirnov,
Luis Balicas
Abstract:
Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe$_2$ crystals mechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$ field-effect transistors, built with the simplest possible architecture, can display high hole mobilities ranging from 350 cm$^2$/Vs at room temperature (saturating at a value…
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Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe$_2$ crystals mechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$ field-effect transistors, built with the simplest possible architecture, can display high hole mobilities ranging from 350 cm$^2$/Vs at room temperature (saturating at a value of ~500 cm$^2$/Vs below 50 K) displaying a strong photocurrent response which leads to exceptionally high photo responsivities up to 7 A/W under white light illumination of the entire channel for power densities p < 10$^2$ W/m$^2$. Under a fixed wavelength of $λ$ = 532 nm and a laser spot size smaller than the conducting channel area we extract photo responsitivities approaching 100 mA/W with concomitantly high external quantum efficiencies up to ~ 40 % at room temperature. These values surpass values recently reported from more complex architectures, such as graphene and transition metal dichalcogenides based heterostructures. Also, tri-layered WSe$_2$ photo-transistors display photo response times in the order of 10 microseconds. Our results indicate that the addition of a few atomic layers considerably decreases the photo response times, probably by minimizing the interaction with the substrates, while maintaining a very high photo-responsivity.
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Submitted 19 May, 2015;
originally announced May 2015.
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Pronounced photovoltaic response from multi-layered transition-metal dichalcogenides PN-junctions
Authors:
Shahriar Memaran,
Nihar R. Pradhan,
Zhengguang Lu,
Daniel Rhodes,
J. Ludwig,
Q. Zhou,
Omotola Ogunsolu,
Pulickel M. Ajayan,
Dmitry Smirnov,
Luis Balicas
Abstract:
Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far, points towards a strong interaction with light, which contrasts with the small photovoltaic efficienc…
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Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far, points towards a strong interaction with light, which contrasts with the small photovoltaic efficiencies $η\geq 1$ % extracted from bulk crystals or exfoliated monolayers. Here, we evaluate the potential of these compounds by studying the photovoltaic response of electrostatically generated PN-junctions composed of approximately ten atomic-layers of MoSe$_2$ stacked onto the dielectric $h$-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies $η$ exceeding 14 %, with fill-factors of ~ 70 %. Given the available strategies for increasing $η$ such as gap tuning, improving the quality of the electrical contacts, or the fabrication of tandem cells, our study suggests a remarkable potential for photovoltaic applications based on TMDs.
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Submitted 30 October, 2015; v1 submitted 8 November, 2014;
originally announced November 2014.
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Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
Authors:
Yilei Li,
Jonathan Ludwig,
Tony Low,
Alexey Chernikov,
Xu Cui,
Ghidewon Arefe,
Young Duck Kim,
Arend M. van der Zande,
Albert Rigosi,
Heather M. Hill,
Suk Hyun Kim,
James Hone,
Zhiqiang Li,
Dmitry Smirnov,
Tony F. Heinz
Abstract:
We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low doping densities, the neutral and charged excitons shift linearly with field strength at a rate of $\mp$ 0.12 meV/T for emission arising, respectively, from the K and K' valleys. The opposite sign for emission from different valleys demonstrates lifting of the valley de…
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We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low doping densities, the neutral and charged excitons shift linearly with field strength at a rate of $\mp$ 0.12 meV/T for emission arising, respectively, from the K and K' valleys. The opposite sign for emission from different valleys demonstrates lifting of the valley degeneracy. The magnitude of the Zeeman shift agrees with predicted magnetic moments for carriers in the conduction and valence bands. The relative intensity of neutral and charged exciton emission is modified by the magnetic field, reflecting the creation of field-induced valley polarization. At high doping levels, the Zeeman shift of the charged exciton increases to $\mp$ 0.18 meV/T. This enhancement is attributed to many-body effects on the binding energy of the charged excitons.
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Submitted 30 September, 2014;
originally announced September 2014.
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Cyclotron resonance of single valley Dirac fermions in gapless HgTe quantum well
Authors:
J. Ludwig,
Yu. B. Vasilyev,
N. N. Mikhailov,
J. M. Poumirol,
Z. Jiang,
O. Vafek,
D. Smirnov
Abstract:
We report on Landau level spectroscopy studies of two HgTe quantum wells (QWs) near or at the critical well thickness, where the band gap vanishes. In magnetic fields up to $B$=16T, oriented perpendicular to the QW plane, we observe a $\sqrt{B}$ dependence for the energy of the dominant cyclotron resonance (CR) transition characteristic of two-dimensional Dirac fermions. The dominant CR line exhib…
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We report on Landau level spectroscopy studies of two HgTe quantum wells (QWs) near or at the critical well thickness, where the band gap vanishes. In magnetic fields up to $B$=16T, oriented perpendicular to the QW plane, we observe a $\sqrt{B}$ dependence for the energy of the dominant cyclotron resonance (CR) transition characteristic of two-dimensional Dirac fermions. The dominant CR line exhibits either a single or double absorption lineshape for the gapless or gapped QW. Using an effective Dirac model, we deduce the band velocity of single valley Dirac fermions in gapless HgTe quantum wells, $v_F=6.4 \times10^5$ m/s, and interpret the double absorption of the gapped QW as resulting from the addition of a small relativistic mass.
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Submitted 18 October, 2013;
originally announced October 2013.
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LaAlO3 stoichiometry found key to electron liquid formation at LaAlO3/SrTiO3 interfaces
Authors:
M. P. Warusawithana,
C. Richter,
J. A. Mundy,
P. Roy,
J. Ludwig,
S. Paetel,
T. Heeg,
A. A. Pawlicki,
L. F. Kourkoutis,
M. Zheng,
M. Lee,
B. Mulcahy,
W. Zander,
Y. Zhu,
J. Schubert,
J. N. Eckstein,
D. A. Muller,
C. Stephen Hellberg,
J. Mannhart,
D. G. Schlom
Abstract:
Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the…
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Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the LaAlO3 has been assumed perfect. Our experiments and first principles calculations show that the cation stoichiometry of the nominal LaAlO3 layer is key to 2-DEL formation: only Al-rich LaAlO3 results in a 2-DEL. While extrinsic defects including oxygen deficiency are known to render LaAlO3/SrTiO3 samples conducting, our results show that in the absence of such extrinsic defects, an interface 2-DEL can form. Its origin is consistent with an intrinsic electronic reconstruction occurring to counteract a polarization catastrophe. This work provides a roadmap for identifying other interfaces where emergent behaviors await discovery.
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Submitted 20 March, 2013;
originally announced March 2013.
