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Imaging Local Effects of Voltage and Boron Doping on Spin Reversal in Antiferromagnetic Magnetoelectric Cr2O3 Thin Films and Devices
Authors:
Adam Erickson,
Syed Qamar Abbas Shah,
Ather Mahmood,
Pratyush Buragohain,
Ilja Fescenko,
Alexei Gruverman,
Christian Binek,
Abdelghani Laraoui
Abstract:
Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic field to achieve reversal of the Neel vector. Recently, boron (B) doping of Cr2O3 films led to an increase TN > 400 K and allowed the realization of vo…
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Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic field to achieve reversal of the Neel vector. Recently, boron (B) doping of Cr2O3 films led to an increase TN > 400 K and allowed the realization of voltage magnetic-field free controlled Néel vector rotation. Here, we directly image the impact of B doping on the formation of AFM domains in Cr2O3 thin films and elucidate the mechanism of voltage-controlled manipulation of the spin structure using nitrogen vacancy (NV) scanning probe magnetometry. We find a stark reduction and thickness dependence of domain size in B-doped Cr2O3 (B:Cr2O3) films, explained by the increased germ density, likely associated with the B doping. By reconstructing the surface magnetization from the NV stray-field maps, we find a qualitative distinction between the undoped and B-doped Cr2O3 films, manifested by the histogram distribution of the AFM ordering, i.e., 180 degree domains for pure films, and 90 degree domains for B:Cr2O3 films. Additionally, NV imaging of voltage-controlled B-doped Cr2O3 devices corroborate the 90 degeree rotation of the AFM domains observed in magnetotransport measurement.
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Submitted 17 May, 2024;
originally announced May 2024.
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Post deposition interfacial Néel temperature tuning in magnetoelectric B:Cr2O3
Authors:
Ather Mahmood,
Jamie Weaver,
Syed Qamar Abbas Shah,
Will Echtenkamp,
Jeffrey W. Lynn,
Peter A. Dowben,
Christian Binek
Abstract:
Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr2O3 into a multifunctional single-phase material which enables electric field driven π/2 rotation of the Néel vector. Nonvolatile, voltage-controlled Néel vector rotation is a much-desired material property in the context of antiferromagnetic spintronics enabling ultra-low power, ultra-fast, nonvolatile memory, and logic device ap…
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Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr2O3 into a multifunctional single-phase material which enables electric field driven π/2 rotation of the Néel vector. Nonvolatile, voltage-controlled Néel vector rotation is a much-desired material property in the context of antiferromagnetic spintronics enabling ultra-low power, ultra-fast, nonvolatile memory, and logic device applications. Néel vector rotation is detected with the help of heavy metal (Pt) Hall-bars in proximity of pulsed laser deposited B:Cr2O3 films. To facilitate operation of B:Cr2O3-based devices in CMOS environments, the Néel temperature, TN, of the functional film must be tunable to values significantly above room temperature. Cold neutron depth profiling and x-ray photoemission spectroscopy depth profiling reveal thermally activated B-accumulation at the B:Cr2O3/ vacuum interface in thin films deposited on Al2O3 substrates. We attribute the B-enrichment to surface segregation. Magnetotransport data confirm B-accumulation at the interface within a layer of about 50 nm thick where the device properties reside. Here TN enhances from 334 K prior to annealing, to 477 K after annealing for several hours. Scaling analysis determines TN as a function of the annealing temperature. Stability of post-annealing device properties is evident from reproducible Néel vector rotation at 370 K performed over the course of weeks.
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Submitted 21 September, 2023;
originally announced September 2023.
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Search for magnetoelectric monopole response in Cr$_2$O$_3$ powder
Authors:
Syed Q. A. Shah,
Ather Mahmood,
Arun Parthasarathy,
Christian Binek
Abstract:
Powder samples have been suggested as a pathway to fabricate isotropic magnetoelectric (ME) materials which effectively only have a pseudoscalar or monopole ME response. We demonstrate that random distribution of ME grains alone does not warrant isotropic ME response because the activation of a non-vanishing ME response requires a ME field cooling protocol which tends to induce preferred axes. We…
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Powder samples have been suggested as a pathway to fabricate isotropic magnetoelectric (ME) materials which effectively only have a pseudoscalar or monopole ME response. We demonstrate that random distribution of ME grains alone does not warrant isotropic ME response because the activation of a non-vanishing ME response requires a ME field cooling protocol which tends to induce preferred axes. We investigate the evolution of ME susceptibility in powder chromia samples for various ME field cooling protocols both theoretically and experimentally. In particular, we work out the theoretical expressions for ME susceptibility for powder Chromia in the framework of statistical mechanics where Boltzmann factors weigh the orientation of the Néel vector relative to the local orientation of the c-axis of a grain. Previous approximations oversimplified the thermodynamic nature of the annealing process giving rise to misleading conclusions on the role of the magnitude of the applied product of electric and magnetic fields on the ME response. In accordance with our refined theory, a strong dependence of the functional form of $α$ vs. $T$ of Chromia powders on the ME field cooling protocol is observed. It shows that Chromia powder is not generically an isotropic ME effective medium but provides a pathway to realize the elusive isotropic ME response.
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Submitted 30 May, 2023;
originally announced May 2023.
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Nanoscale imaging of antiferromagnetic domains in epitaxial films of Cr2O3 via scanning diamond magnetic probe microscopy
Authors:
Adam Erickson,
Syed Qamar Abbas Shah,
Ather Mahmood,
Ilja Fescenko,
Rupak Timalsina,
Christian Binek,
Abdelghani Laraoui
Abstract:
We report direct imaging of boundary magnetization associated with antiferromagnetic domains in magnetoelectric epitaxial Cr2O3 thin films using diamond nitrogen vacancy microscopy. We found a correlation between magnetic domain size and structural grain size which we associate with the domain formation process. We performed field cooling, i.e., cooling from above to below the Néel temperature in…
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We report direct imaging of boundary magnetization associated with antiferromagnetic domains in magnetoelectric epitaxial Cr2O3 thin films using diamond nitrogen vacancy microscopy. We found a correlation between magnetic domain size and structural grain size which we associate with the domain formation process. We performed field cooling, i.e., cooling from above to below the Néel temperature in the presence of magnetic field, which resulted in the selection of one of the two otherwise degenerate 180 degree domains. Lifting of such a degeneracy is achievable with a magnetic field alone due to the Zeeman energy of a weak parasitic magnetic moment in Cr2O3 films that originates from defects and the imbalance of the boundary magnetization of opposing interfaces. This boundary magnetization couples to the antiferromagnetic order parameter enabling selection of its orientation. Nanostructuring the Cr2O3 film with mesa structures revealed reversible edge magnetic states with the direction of magnetic field during field cooling.
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Submitted 6 January, 2023; v1 submitted 15 September, 2022;
originally announced September 2022.
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Distance Dependence of the Energy Transfer Rate From a Single Semiconductor Nanostructure to Graphene
Authors:
François Federspiel,
Guillaume Froehlicher,
Michel Nasilowski,
Silvia Pedetti,
Ather Mahmood,
Bernard Doudin,
Serin Park,
Jeong-O Lee,
David Halley,
Benoît Dubertret,
Pierre Gilliot,
Stéphane Berciaud
Abstract:
The near-field Coulomb interaction between a nano-emitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. Here, we investigate the distance dependence of the energy transfer rate from individual, i) zero-dimensional CdSe/CdS nanocrystals and ii) two-dimensional CdSe/CdS/ZnS nanoplatelets to a graphene monolayer. For increasing…
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The near-field Coulomb interaction between a nano-emitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. Here, we investigate the distance dependence of the energy transfer rate from individual, i) zero-dimensional CdSe/CdS nanocrystals and ii) two-dimensional CdSe/CdS/ZnS nanoplatelets to a graphene monolayer. For increasing distances $d$, the energy transfer rate from individual nanocrystals to graphene decays as $1/d^4$. In contrast, the distance dependence of the energy transfer rate from a two-dimensional nanoplatelet to graphene deviates from a simple power law, but is well described by a theoretical model, which considers a thermal distribution of free excitons in a two-dimensional quantum well. Our results show that accurate distance measurements can be performed at the single particle level using graphene-based molecular rulers and that energy transfer allows probing dimensionality effects at the nanoscale.
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Submitted 14 January, 2015;
originally announced January 2015.
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Circular dichroism of magneto-phonon resonance in doped graphene
Authors:
P. Kossacki,
C. Faugeras,
M. Kühne,
M. Orlita,
A. Mahmood,
E. Dujardin,
R. R. Nair,
A. K. Geim,
M. Potemski
Abstract:
Polarization resolved, Raman scattering response due to E$_{2g}$ phonon in monolayer graphene has been investigated in magnetic fields up to 29 T. The hybridization of the E$_{2g}$ phonon with only the fundamental inter Landau level excitation (involving the n=0 Landau level) is observed and only in one of the two configurations of the circularly crossed polarized excitation and scattered light. T…
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Polarization resolved, Raman scattering response due to E$_{2g}$ phonon in monolayer graphene has been investigated in magnetic fields up to 29 T. The hybridization of the E$_{2g}$ phonon with only the fundamental inter Landau level excitation (involving the n=0 Landau level) is observed and only in one of the two configurations of the circularly crossed polarized excitation and scattered light. This polarization anisotropy of the magneto-phonon resonance is shown to be inherent to relatively strongly doped graphene samples, with carrier concentration typical for graphene deposited on SiO$_2$.
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Submitted 4 November, 2012; v1 submitted 30 July, 2012;
originally announced July 2012.
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Probing the band structure of quadri-layer graphene with magneto-phonon resonance
Authors:
C. Faugeras,
P Kossacki,
A. A. L. Nicolet,
M. Orlita,
M Potemski,
A. Mahmood,
D. M. Basko
Abstract:
We show how the magneto-phonon resonance, particularly pronounced in sp2 carbon allotropes, can be used as a tool to probe the band structure of multilayer graphene specimens. Even when electronic excitations cannot be directly observed, their coupling to the E2g phonon leads to pronounced oscillations of the phonon feature observed through Raman scattering experiments with multiple periods and am…
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We show how the magneto-phonon resonance, particularly pronounced in sp2 carbon allotropes, can be used as a tool to probe the band structure of multilayer graphene specimens. Even when electronic excitations cannot be directly observed, their coupling to the E2g phonon leads to pronounced oscillations of the phonon feature observed through Raman scattering experiments with multiple periods and amplitudes detemined by the electronic excitation spectrum. Such experiment and analysis have been performed up to 28T on an exfoliated 4-layer graphene specimen deposited on SiO2, and the observed oscillations correspond to the specific AB stacked 4-layer graphene electronic excitation spectrum.
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Submitted 10 September, 2012; v1 submitted 29 June, 2012;
originally announced June 2012.
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Epitaxial graphene morphologies probed by weak (anti)-localization
Authors:
Ather Mahmood,
Cécile Naud,
Clément Bouvier,
Fanny Hiebel,
Pierre Mallet,
Jean-Yves Veuillen,
Laurent Levy,
Didier Chaussende,
Thierry Ouisse
Abstract:
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferr…
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We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].
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Submitted 1 March, 2013; v1 submitted 8 June, 2012;
originally announced June 2012.
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Quasiparticle scattering off phase boundaries in epitaxial graphene
Authors:
A. Mahmood,
P. Mallet,
J. -Y. Veuillen
Abstract:
We investigate the electronic structure of terraces of single layer graphene (SLG) by scanning tunneling microscopy (STM) on samples grown by thermal decomposition of 6H-SiC(0001) crystals in ultra-high vacuum. We focus on the perturbations of the local density of states (LDOS) in the vicinity of edges of SLG terraces. Armchair edges are found to favour intervalley quasiparticle scattering, leadin…
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We investigate the electronic structure of terraces of single layer graphene (SLG) by scanning tunneling microscopy (STM) on samples grown by thermal decomposition of 6H-SiC(0001) crystals in ultra-high vacuum. We focus on the perturbations of the local density of states (LDOS) in the vicinity of edges of SLG terraces. Armchair edges are found to favour intervalley quasiparticle scattering, leading to the (\surd3\times\surd3)R30° LDOS superstructure already reported for graphite edges and more recently for SLG on SiC(0001). Using Fourier transform of LDOS images, we demonstrate that the intrinsic doping of SLG is responsible for a LDOS pattern at the Fermi energy which is more complex than for neutral graphene or graphite, since it combines local (\surd3\times\surd3)R30° superstructure and long range beating modulation. Although these features were already reported by Yang et al. Nanoletters 10, 943 (2010), we propose here an alternative interpretation based on simple arguments classically used to describe standing wave patterns in standard two-dimensional systems. Finally, we discuss the absence of intervalley scattering off other typical boundaries: zig-zag edges and SLG/bilayer graphene junctions.
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Submitted 17 January, 2012;
originally announced January 2012.
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Production, properties and potential of graphene
Authors:
Caterina Soldano,
Ather Mahmood,
Erik Dujardin
Abstract:
This review on graphene, a one atom thick, two-dimensional sheet of carbon atoms, starts with a general description of the graphene electronic structure as well as a basic experimental toolkit for identifying and handling this material. Owing to the versatility of graphene properties and projected applications, several production techniques are summarized, ranging from the mechanical exfoliation…
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This review on graphene, a one atom thick, two-dimensional sheet of carbon atoms, starts with a general description of the graphene electronic structure as well as a basic experimental toolkit for identifying and handling this material. Owing to the versatility of graphene properties and projected applications, several production techniques are summarized, ranging from the mechanical exfoliation of high quality graphene to the direct growth on carbides or metal substrates and from the chemical routes using graphene oxide to the newly developed approach at the molecular level. The most promising and appealing properties of graphene are summarized from an exponentially growing literature, with a particular attention to matching production methods to characteristics and to applications. In particular, we report on the high carrier mobility value in suspended and annealed samples for electronic devices, on the thickness-dependent optical transparency and, in the mechanical section, on the high robustness and full integration of graphene in sensing device applications. Finally, we emphasize on the high potential of graphene not only as a post-silicon materials for CMOS device application but more ambitiously as a platform for post-CMOS molecular architecture in electronic information processing.
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Submitted 1 February, 2010;
originally announced February 2010.
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Side-gated transport in FIB-fabricated multilayered graphene nanoribbons
Authors:
Jean-Francois Dayen,
Ather Mahmood,
Dmitry S. Golubev,
Isabelle Roch-Jeune,
Philippe Salles,
Erik Dujardin
Abstract:
In this Letter, we present the patterning, exfoliation and micromanipulation of thin graphitic discs which are subsequently connected and patterned into sub-100nm wide ribbons with a resist-free process using Focused Ion Beam (FIB) lithography and deposition. The electronic transport properties of the double side-gated nanoribbons are then investigated down to 40 K and interpreted with a simple…
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In this Letter, we present the patterning, exfoliation and micromanipulation of thin graphitic discs which are subsequently connected and patterned into sub-100nm wide ribbons with a resist-free process using Focused Ion Beam (FIB) lithography and deposition. The electronic transport properties of the double side-gated nanoribbons are then investigated down to 40 K and interpreted with a simple model of 1D array of tunnelling junctions.
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Submitted 26 January, 2008; v1 submitted 14 December, 2007;
originally announced December 2007.
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Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study
Authors:
C. Faugeras,
A. Nerriere,
M. Potemski,
A. Mahmood,
E. Dujardin,
C. Berger,
W. A. de Heer
Abstract:
The results of micro-Raman scattering measurements performed on three different ``graphitic'' materials: micro-structured disks of highly oriented pyrolytic graphite, graphene multi-layers thermally decomposed from carbon terminated surface of 4H-SiC and an exfoliated graphene monolayer are presented. Despite its multi-layer character, most parts of the surface of the graphitized SiC substrates…
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The results of micro-Raman scattering measurements performed on three different ``graphitic'' materials: micro-structured disks of highly oriented pyrolytic graphite, graphene multi-layers thermally decomposed from carbon terminated surface of 4H-SiC and an exfoliated graphene monolayer are presented. Despite its multi-layer character, most parts of the surface of the graphitized SiC substrates shows a single-component, Lorentzian shape, double resonance Raman feature in striking similarity to the case of a single graphene monolayer. Our observation suggests a very weak electronic coupling between graphitic layers on the SiC surface, which therefore can be considered to be graphene multi-layers with a simple (Dirac-like) band structure.
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Submitted 7 December, 2007; v1 submitted 17 September, 2007;
originally announced September 2007.
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Cosmological mass functions and moving barrier models
Authors:
Asim Mahmood,
R. Rajesh
Abstract:
In the ellipsoidal collapse model, the critical density for the collapse of a gravitationally bound object is a function of its mass. In the excursion set formalism, this translates into a moving barrier problem such that the mass function of dark matter haloes is given by the first crossing probability of a random walker across the barrier. In this paper, we study this first crossing probabilit…
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In the ellipsoidal collapse model, the critical density for the collapse of a gravitationally bound object is a function of its mass. In the excursion set formalism, this translates into a moving barrier problem such that the mass function of dark matter haloes is given by the first crossing probability of a random walker across the barrier. In this paper, we study this first crossing probability analytically. Complete solutions are obtained for barriers that vary as square root of time and square of time. Large and small time asymptotic behaviour is derived. For arbitrary power-law barriers, the large time behaviour is determined. The solutions allow us to derive useful inferences about the scaling of the conditional mass function in terms of present day halo masses and look back redshifts. As an application of our results, we compare the estimates of major merger rates of haloes in constant and moving barrier models and find that for massive haloes ($10^{12-13} M_\odot$) the latter predicts significantly higher merger rates towards high redshifts ($z \gtrsim 4$)
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Submitted 24 February, 2005;
originally announced February 2005.
