Spin orbit field in a physically defined p type MOS silicon double quantum dot
Authors:
Marian Marx,
Jun Yoneda,
Ángel Gutiérrez Rubio,
Peter Stano,
Tomohiro Otsuka,
Kenta Takeda,
Sen Li,
Yu Yamaoka,
Takashi Nakajima,
Akito Noiri,
Daniel Loss,
Tetsuo Kodera,
Seigo Tarucha
Abstract:
We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel.…
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We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel. In this way, we find that the spin flip of a tunneling hole is due to a SO field pointing perpendicular to the double dot axis and almost fully out of the quantum well plane. We augment the measurements by a derivation of SO terms using group symmetric representations theory. It predicts that without in plane electric fields (a quantum well case), the SO field would be mostly within the plane, dominated by a sum of a Rashba and a Dresselhaus like term. We, therefore, interpret the observed SO field as originated in the electric fields with substantial in plane components.
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Submitted 17 March, 2020; v1 submitted 16 March, 2020;
originally announced March 2020.
Amplified and tunable transverse and longitudinal spin-photon coupling in hybrid circuit-QED
Authors:
Neill Lambert,
Mauro Cirio,
Matthieu Delbecq,
Giles Allison,
Marian Marx,
Seigo Tarucha,
Franco Nori
Abstract:
We describe a method to tune, in-situ, between transverse and longitudinal light-matter coupling in a hybrid circuit-QED device composed of an electron spin degree of freedom coupled to a microwave transmission line cavity. Our approach relies on periodic modulation of the coupling itself, such that in a certain frame the interaction is both amplified and either transverse, or, by modulating at tw…
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We describe a method to tune, in-situ, between transverse and longitudinal light-matter coupling in a hybrid circuit-QED device composed of an electron spin degree of freedom coupled to a microwave transmission line cavity. Our approach relies on periodic modulation of the coupling itself, such that in a certain frame the interaction is both amplified and either transverse, or, by modulating at two frequencies, longitudinal. The former realizes an effective simulation of certain aspects of the ultra-strong coupling regime, while the latter allows one to implement a longitudinal readout scheme even when the intrinsic Hamiltonian is transverse, and the individual spin or cavity frequencies cannot be changed. We analyze the fidelity of using such a scheme to measure the state of the electron spin degree of freedom, and argue that the longitudinal readout scheme can operate in regimes where the traditional dispersive approach fails.
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Submitted 6 December, 2017;
originally announced December 2017.
