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Adsorption of cytosine and aza derivatives of cytidine on Au single crystal surfaces
Authors:
M. Iakhnenko,
V. Feyer,
N. Tsud,
O. Plekan,
F. Wang,
M. Ahmed,
O. Slobodyanyuk,
R. G. Acres,
V. Matolín,
K. C. Prince
Abstract:
The adsorption of cytosine on the Au(111) and Au(110) surfaces has been studied using both aqueous deposition and evaporation in vacuum to prepare the samples. Soft X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure spectroscopy (NEXAFS) were used to determine the electronic structure and orientation of the adsorbates. In addition, three derivatives of cytosine, 6…
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The adsorption of cytosine on the Au(111) and Au(110) surfaces has been studied using both aqueous deposition and evaporation in vacuum to prepare the samples. Soft X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure spectroscopy (NEXAFS) were used to determine the electronic structure and orientation of the adsorbates. In addition, three derivatives of cytosine, 6-azacytosine, 6-azacytidine and 5- azacytidine, were studied. Monolayer films of the latter three samples were adsorbed on Au(111) from aqueous solution, and the nature of bonding was determined. Spectra have been interpreted in the light of published calculations of free cytosine molecules and new ab initio calculations of the other compounds. Surface core level shifts of Au 4f imply that all of these compounds are chemisorbed. Cytosine adsorbs as a single tautomer, but in two chemical states with different surface-molecule bonding. For deposition in vacuum, a flat-lying molecular state bonded through the N(3) atom of the pyrimidine ring dominates, but a second state is also present. For deposition from solution, the second state dominates, with the molecular plane no longer parallel to the surface. This state also bonds through the N(3) atom, but in addition interacts with the surface via the amino group. Two tautomers of 6-azacytosine were observed, and they and 6-azacytidine adsorb with similar geometries, chemically bonding via the azacytosine ring. The ribose ring does not appear to perturb the adsorption of azacytidine compared with azacytosine. The azacytosine ring is nearly but not perfectly parallel to the surface, like 5-azacytidine, which adsorbs as an imino tautomer. ...
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Submitted 19 May, 2013;
originally announced May 2013.
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Nitridation of InP(1 0 0) surface studied by synchrotron radiation
Authors:
Matthieu Petit,
David Baca,
S. Arabasz,
Luc Bideux,
Natalia Tsud,
S. Fabik,
Bernard Gruzza,
Vladimir Chab,
Vladimir Matolin,
K. C. Prince
Abstract:
The nitridation of InP(1 0 0) surfaces has been studied using synchrotron radiation photoemission. The samples were chemically cleaned and then ion bombarded, which cleaned the surface and also induced the formation of metallic indium droplets. The nitridation with a Glow Discharge Cell (GDS) produced indium nitride by reaction with these indium clusters. We used the In 4d and P 2p core levels t…
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The nitridation of InP(1 0 0) surfaces has been studied using synchrotron radiation photoemission. The samples were chemically cleaned and then ion bombarded, which cleaned the surface and also induced the formation of metallic indium droplets. The nitridation with a Glow Discharge Cell (GDS) produced indium nitride by reaction with these indium clusters. We used the In 4d and P 2p core levels to monitor the chemical state of the surface and the coverage of the species present. We observed the creation of In-N and P-N bonds while the In-In metallic bonds decrease which confirm the reaction between indium clusters and nitrogen species. A theoretical model based on stacked layers allows us to assert that almost two monolayers of indium nitride are produced. The effect of annealing on the nitridated layers at 450 $^\circ$C has also been analysed. It appears that this system is stable up to this temperature, well above the congruent evaporation temperature (370 $^\circ$C) of clean InP(1 0 0): no increase of metallic indium bonds due to decomposition of the substrate is detected as shown in previous works [L. Bideux, Y. Ould-Metidji, B. Gruzza, V. Matolin, Surf. Interface Anal. 34 (2002) 712] studying the InP(1 0 0) surfaces.
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Submitted 30 January, 2009;
originally announced January 2009.
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First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES
Authors:
M. Petit,
Yamina Andre Ould-Metidji,
Christine Robert-Goumet,
Luc Bideux,
Bernard Gruzza,
Vladimir Matolin
Abstract:
The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser diodes). It is essential for the realization of such novel devices to grow high-quality nitride single crystals. In this paper, we report the first stages of the InP(1 0 0) surfaces nitridation in order to grow high-quali…
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The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser diodes). It is essential for the realization of such novel devices to grow high-quality nitride single crystals. In this paper, we report the first stages of the InP(1 0 0) surfaces nitridation in order to grow high-quality nitride films. Indeed, the nitridation process is an important step in the growth of nitrides [J. Vac. Sci. Technol. A 17 (1999) 2194; Phys. Status Solidi A 176 (1999) 595]. Previous works [Synth. Met. 90 (1997) 2233; Appl. Phys. Lett. 63 (1993) 1957] have shown that in situ Ar+ ions bombardment is useful on the one hand to clean the surface, and on the other hand to create droplets of metallic indium in well-controlled quantity. Then the indium metallic enrichment of the surface, monitoring by elastic peak electron spectroscopy (EPES) and Auger electron spectroscopy (AES) allows to prepare the III-V semiconductors surfaces to the nitridation step. The nitridated process has been performed with a high voltage plasma discharge cell and has been studied using quantitative Auger electron spectroscopy, elastic peak electron spectroscopy and electron energy loss spectroscopy (EELS), in order to optimize the conditions of InN layers formation.
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Submitted 30 January, 2009;
originally announced January 2009.
