Showing 1–50 of 52 results for author: Morozov, S V

Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier

Authors: Dmitry A. Mylnikov, Mikhail A. Kashchenko, Kirill N. Kapralov, Davit A. Ghazaryan, Evgenii E. Vdovin, Sergey V. Morozov, Kostya S. Novoselov, Denis A. Bandurin, Alexander I. Chernov, Dmitry A. Svintsov

Abstract: Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional… ▽ More Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional to the second derivative of the tunnel current with respect to the bias voltage, peaking during tunneling through the hBN impurity level. We revealed that the origin of the photocurrent generation lies in the change of the tunneling probability upon radiation-induced electron heating in graphene layers, in agreement with the theoretical model that we developed. Finally, we show that at a finite bias voltage, the photocurrent is proportional to the either of the graphene layers heating under the illumination, while at zero bias, it is proportional to the heating difference. Thus, the photocurrent in such devices can be used for accurate measurements of the electronic temperature providing a convenient alternative to Johnson noise thermometry. △ Less

Submitted 9 December, 2023; originally announced December 2023.

Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions

Authors: B. Benhamou-Bui, C. Consejo, S. S. Krishtopenko, M. Szoła, K. Maussang, S. Ruffenach, E. Chauveau, S. Benlemqwanssa, C. Bray, X. Baudry, P. Ballet, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, B. Jouault, J. Torres, F. Teppe

Abstract: Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the wa… ▽ More Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the way for a gate-tunable, permanent-magnet Landau laser. In this work, we demonstrate the proof-of-concept of such a back-gate tunable THz cyclotron emitter at fixed magnetic field. The emission frequency detected at 1.5 Tesla is centered on 2.2 THz and can already be electrically tuned over 250 GHz. With an optimized gate and a realistic permanent magnet of 1.0 Tesla, we estimate that the cyclotron emission could be continuously and rapidly tunable by the gate bias between 1 and 3 THz, that is to say on the less covered part of the THz gap. △ Less

Submitted 21 July, 2023; originally announced July 2023.

Comments: 6 pages, 4 figures

Journal ref: APL Photonics 8, 116106 (2023)

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

Authors: E. E. Vdovin, M. T. Greenaway, Yu. N. Khanin, S. V. Morozov, O. Makarovsky, A. Patanè, A. Mishchenko, S. Slizovskiy, V. I. Fal'ko, A. K. Geim, K. S. Novoselov, L. Eaves

Abstract: Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its… ▽ More Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of $\sim$ 2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions. △ Less

Submitted 4 July, 2023; originally announced July 2023.

Journal ref: Communications Physics volume 6, Article number: 159 (2023)

Terahertz cyclotron emission from two-dimensional Dirac fermions

Authors: S. Gebert, C. Consejo, S. S. Krishtopenko, S. Ruffenach, M. Szola, J. Torres, C. Bray, B. Jouault, M. Orlita, X. Baudry, P. Ballet, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe

Abstract: Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized… ▽ More Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized graphene, and so far no cyclotron emission from Dirac fermions has been reported. One way to eliminate this last non-radiative process is to sufficiently modify the dispersion of the Landau levels by opening a small gap in the linear band structure. A proven example of such gapped graphene-like materials are HgTe quantum wells close to the topological phase transition. In this work, we experimentally demonstrate Landau emission from Dirac fermions in such HgTe quantum wells, where the emission is tunable by both the magnetic field and the carrier concentration. Consequently, these results represent an advance in the realization of terahertz Landau lasers tunable by magnetic field and gate-voltage. △ Less

Submitted 14 January, 2023; originally announced January 2023.

Comments: Main text with the figures of the published version

Journal ref: Nature Photonics (2023)

Twisted monolayer and bilayer graphene for vertical tunneling transistors

Authors: Davit A. Ghazaryan, Abhishek Misra, Evgenii E. Vdovin, Kenji Watanabe, Takashi Taniguchi, Sergei V. Morozov, Artem Mishchenko, Kostya S. Novoselov

Abstract: We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Un… ▽ More We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, which allows control over the resonant conditions. △ Less

Submitted 25 March, 2021; originally announced March 2021.

Journal ref: Appl. Phys. Lett. 118, 183106 (2021)

Auger recombination in narrow band quantum well CdxHg1-xTe/CdyHg1-yTe heterostructures

Authors: V. Ya. Aleshkin, G. Alymov, A. V. Antonov, A. A. Dubinov, V. V. Rumyantsev, S. V. Morozov

Abstract: We present detailed theoretical and experimental studies of Auger recombination in narrow-gap mercury cadmium telluride quantum wells (HgCdTe QWs). We calculate the Auger recombination probabilities as functions of non-equilibrium carrier density, temperature and composition of quantum wells taking into account the complex band dispersions and wave functions of the structures. Our theory is valida… ▽ More We present detailed theoretical and experimental studies of Auger recombination in narrow-gap mercury cadmium telluride quantum wells (HgCdTe QWs). We calculate the Auger recombination probabilities as functions of non-equilibrium carrier density, temperature and composition of quantum wells taking into account the complex band dispersions and wave functions of the structures. Our theory is validated by comparison with measured kinetics of photoconductivity relaxation in QW with band gap of 76 meV at a temperature of 77 K. We find good agreement of theory and experiment using a single fitting parameter: the initial density of non-equilibrium carriers. The model is further used to optimize the composition of QWs and find the most suitable conditions for far-infrared lasing. Particularly, for band gap of 40 meV (lasing wavelength λらむだ=31 μみゅーm) the lasing is favored in QWs with 6.5% cadmium fraction. We also find that at very large non-equilibrium carrier densities, the main recombination channel is associated with emission of two-dimensional plasmons and not with Auger process △ Less

Submitted 22 October, 2020; originally announced October 2020.

Comments: 12 pages and 9 figures

Composite super-moiré lattices in double aligned graphene heterostructures

Authors: Zihao Wang, Yi Bo Wang, J. Yin, E. Tóvári, Y. Yang, L. Lin, M. Holwill, J. Birkbeck, D. J. Perello, Shuigang Xu, J. Zultak, R. V. Gorbachev, A. V. Kretinin, T. Taniguchi, K. Watanabe, S. V. Morozov, M. Anđelković, S. P. Milovanović, L. Covaci, F. M. Peeters, A. Mishchenko, A. K. Geim, K. S. Novoselov, Vladimir I. Fal'ko, Angelika Knothe , et al. (1 additional authors not shown)

Abstract: When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moiré pattern forms, which results in specific electron scattering, reconstruction of electronic and excitoni… ▽ More When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moiré pattern forms, which results in specific electron scattering, reconstruction of electronic and excitonic spectra, crystal reconstruction, and many other effects. Thus, formation of moiré patterns is a viable tool of controlling the electronic properties of 2D materials. At the same time, the difference in the interatomic distances for the two crystals combined, determines the range in which the electronic spectrum is reconstructed, and thus is a barrier to the low energy regime. Here we present a way which allows spectrum reconstruction at all energies. By using graphene which is aligned simultaneously to two hexagonal boron nitride layers, one can make electrons scatter in the differential moiré pattern, which can have arbitrarily small wavevector and, thus results in spectrum reconstruction at arbitrarily low energies. We demonstrate that the strength of such a potential relies crucially on the atomic reconstruction of graphene within the differential moiré super-cell. Such structures offer further opportunity in tuning the electronic spectra of two-dimensional materials. △ Less

Submitted 27 December, 2019; originally announced December 2019.

Comments: 35 pages, 15 figures

Journal ref: Science Advances 20 Dec 2019: Vol. 5, no. 12, eaay8897

Electronic phase separation in topological surface states of rhombohedral graphite

Authors: Yanmeng Shi, Shuigang Xu, Yaping Yang, Sergey Slizovskiy, Sergei V. Morozov, Seok-Kyun Son, Servet Ozdemir, Ciaran Mullan, Julien Barrier, Jun Yin, Alexei I. Berdyugin, Benjamin A. Piot, Takashi Taniguchi, Kenji Watanabe, Vladimir I. Fal'ko, Kostya S. Novoselov, A. K. Geim, Artem Mishchenko

Abstract: Of the two stable forms of graphite, hexagonal (HG) and rhombohedral (RG), the former is more common and has been studied extensively. RG is less stable, which so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics. Advances in van der Waals heterostructure technology have now allowed us to make high-quality RG fi… ▽ More Of the two stable forms of graphite, hexagonal (HG) and rhombohedral (RG), the former is more common and has been studied extensively. RG is less stable, which so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics. Advances in van der Waals heterostructure technology have now allowed us to make high-quality RG films up to 50 graphene layers thick and study their transport properties. We find that the bulk electronic states in such RG are gapped and, at low temperatures, electron transport is dominated by surface states. Because of topological protection, the surface states are robust and of high quality, allowing the observation of the quantum Hall effect, where RG exhibits phase transitions between gapless semimetallic phase and gapped quantum spin Hall phase with giant Berry curvature. An energy gap can also be opened in the surface states by breaking their inversion symmetry via applying a perpendicular electric field. Moreover, in RG films thinner than 4 nm, a gap is present even without an external electric field. This spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation, which we attribute to emergence of strongly-correlated electronic surface states. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Comments: 18 pages, 12 figures

Journal ref: Nature 584, 210-214 (2020)

Giant oscillations in a triangular network of one-dimensional states in marginally twisted graphene

Authors: S. G. Xu, A. I. Berdyugin, P. Kumaravadivel, F. Guinea, R. Krishna Kumar, D. A. Bandurin, S. V. Morozov, W. Kuang, B. Tsim, S. Liu, J. H. Edgar, I. V. Grigorieva, V. I. Fal'ko, M. Kim, A. K. Geim

Abstract: The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at "magic" angles in twisted bilayer graphene (BLG). For very small ("marginal") twist angles of 0.1 deg, BLG has been shown to exhibit a strain-accompanied reconstruction that results in submicron-size triangular domains with the Berna… ▽ More The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at "magic" angles in twisted bilayer graphene (BLG). For very small ("marginal") twist angles of 0.1 deg, BLG has been shown to exhibit a strain-accompanied reconstruction that results in submicron-size triangular domains with the Bernal stacking. If the interlayer bias is applied to open an energy gap inside the domain regions making them insulating, marginally-twisted BLG is predicted to remain conductive due to a triangular network of chiral one-dimensional (1D) states hosted by domain boundaries. Here we study electron transport through this network and report giant Aharonov-Bohm oscillations persisting to temperatures above 100 K. At liquid helium temperatures, the network resistivity exhibits another kind of oscillations that appear as a function of carrier density and are accompanied by a sign-changing Hall effect. The latter are attributed to consecutive population of the flat minibands formed by the 2D network of 1D states inside the gap. Our work shows that marginally twisted BLG is markedly distinct from other 2D electronic systems, including BLG at larger twist angles, and offers a fascinating venue for further research. △ Less

Submitted 19 August, 2019; v1 submitted 30 May, 2019; originally announced May 2019.

Comments: 11 pages, 8 figures

Journal ref: Nature Communications 10, 4008 (2019)

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

Authors: M. T. Greenaway, E. E. Vdovin, D. Ghazaryan, A. Misra, A. Mishchenko, Y. Cao, Z. Wang, J. R. Wallbank, M. Holwill, Yu. N. Khanin, S. V. Morozov, K. Watanabe, T. Taniguchi, O. Makarovsky, T. M. Fromhold, A. Patanè, A. K. Geim, V. I. Fal'ko, K. S. Novoselov, L. Eaves

Abstract: Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical… ▽ More Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer hBN barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated. △ Less

Submitted 14 December, 2018; v1 submitted 2 October, 2018; originally announced October 2018.

Comments: Supplementary information can be found at https://doi.org/10.1038/s42005-018-0097-1

Journal ref: Communications Physics 1, 94 (2018)

Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

Authors: Davit Ghazaryan, Mark T. Greenaway, Zihao Wang, Victor H. Guarochico-Moreira, Ivan J. Vera-Marun, Jun Yin, Yuanxun Liao, Serge V. Morozov, Oleg Kristanovski, Alexander I. Lichtenstein, Mikhail I. Katsnelson, Fred Withers, Artem Mishchenko, Laurence Eaves, Andre K. Geim, Kostya S. Novoselov, Abhishek Misra

Abstract: The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretica… ▽ More The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretically and experimentally. Here we investigate electron tunnelling through a thin (2-6 layers) ferromagnetic CrBr3 barrier. For devices with non-magnetic barriers, conservation of momentum can be relaxed by phonon-assisted tunnelling or by tunnelling through localised states. In the case of our ferromagnetic barrier the dominant tunnelling mechanisms are the emission of magnons at low temperatures or scattering of electrons on localised magnetic excitations above the Curie temperature. Tunnelling with magnon emission offers the possibility of injecting spin into the collector electrode. △ Less

Submitted 12 May, 2018; v1 submitted 6 March, 2018; originally announced March 2018.

Journal ref: Nature Electronics volume 1, pages 344-349 (2018)

Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure

Authors: V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur, V. Ryzhii

Abstract: We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A$_3$B$_5$ heterostr… ▽ More We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A$_3$B$_5$ heterostructures. △ Less

Submitted 23 January, 2018; originally announced January 2018.

Comments: 6 pages, 6 figures

Temperature-induced topological phase transition in HgTe quantum wells

Authors: A. M. Kadykov, S. S. Krishtopenko, B. Jouault, W. Desrat, W. Knap, S. Ruffenach, C. Consejo, J. Torres, S. V. Morozov, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe

Abstract: We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole… ▽ More We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole-like subbands. Their crossing at critical magnetic field $B_c$ is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of $B_c$, we directly extract the critical temperature $T_c$, at which the bulk band-gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed. △ Less

Submitted 26 January, 2018; v1 submitted 18 October, 2017; originally announced October 2017.

Comments: 5 pages + Supplemental Materials; Phys. Rev. Lett. (accepted)

Journal ref: Phys. Rev. Lett. 120, 086401 (2018)

High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices

Authors: R. Krishna Kumar, X. Chen, G. H. Auton, A. Mishchenko, D. A. Bandurin, S. V. Morozov, Y. Cao, E. Khestanova, M. Ben Shalom, A. V. Kretinin, K. S. Novoselov, L. Eaves, I. V. Grigorieva, L. A. Ponomarenko, V. I. Fal'ko, A. K. Geim

Abstract: Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene superlattices support a different type of quantum oscillations that do not rely on Landau quantization. The oscillations are extremely robust and persist w… ▽ More Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene superlattices support a different type of quantum oscillations that do not rely on Landau quantization. The oscillations are extremely robust and persist well above room temperature in magnetic fields of only a few T. We attribute this phenomenon to repetitive changes in the electronic structure of superlattices such that charge carriers experience effectively no magnetic field at simple fractions of the flux quantum per superlattice unit cell. Our work points at unexplored physics in Hofstadter butterfly systems at high temperatures. △ Less

Submitted 31 May, 2017; originally announced May 2017.

Journal ref: Science 357, 181-184 (2017)

Temperature-driven single-valley Dirac fermions in HgTe quantum wells

Authors: M. Marcinkiewicz, S. Ruffenach, S. S. Krishtopenko, A. M. Kadykov, C. Consejo, D. B. But, W. Desrat, W. Knap, J. Torres, A. V. Ikonnikov, K. E. Spirin, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe

Abstract: We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness $d_c$. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than $d_c$ evidences a temperature-driven transition from topological insulato… ▽ More We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness $d_c$. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than $d_c$ evidences a temperature-driven transition from topological insulator to semiconductor phases. At the critical temperature of 90 K, the merging of inter- and intra-band transitions in weak magnetic fields clearly specifies the formation of gapless state, revealing the appearance of single-valley massless Dirac fermions with velocity of $5.6\times10^5$ m$\times$s$^{-1}$. For both quantum wells, the energies extracted from experimental data are in good agreement with calculations on the basis of the 8-band Kane Hamiltonian with temperature-dependent parameters. △ Less

Submitted 12 July, 2017; v1 submitted 22 February, 2017; originally announced February 2017.

Comments: 5 pages, 3 figures and Supplemental Materials (4 pages)

Journal ref: Phys. Rev. B 96, 035405 (2017)

High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe

Authors: D. A. Bandurin, A. V. Tyurnina, G. L. Yu, A. Mishchenko, V. Zolyomi, S. V. Morozov, R. Krishna Kumar, R. V. Gorbachev, Z. R. Kudrynskyi, S. Pezzini, Z. D. Kovalyuk, U. Zeitler, K. S. Novoselov, A. Patane, L. Eaves, I. V. Grigorieva, V. I. Fal'ko, A. K. Geim, Y. Cao

Abstract: A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexag… ▽ More A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 1,000 and 10,000 cm2/Vs at room and liquid-helium temperatures, respectively, allowing the observation of the fully-developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically-thin dichalcogenides and black phosphorus. △ Less

Submitted 31 August, 2016; originally announced August 2016.

Journal ref: Nature Nanotechnology 12, 223-227 (2016)

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Authors: J. R. Wallbank, D. Ghazaryan, A. Misra, Y. Cao, J. S. Tu, B. A. Piot, M. Potemski, S. Pezzini, S. Wiedmann, U. Zeitler, T. L. M. Lane, S. V. Morozov, M. T. Greenaway, L. Eaves, A. K. Geim, V. I. Fal'ko, K. S. Novoselov, A. Mishchenko

Abstract: Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly… ▽ More Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley. △ Less

Submitted 8 August, 2016; originally announced August 2016.

Comments: 26 pages, 13 figures

Journal ref: Science, 353, 575-579, (2016)

Macroscopic self-reorientation of interacting two-dimensional crystals

Authors: C. R. Woods, F. Withers, M. J. Zhu, Y. Cao, G. Yu, A. Kozikov, M. Ben Shalom, S. V. Morozov, M. M. van Wijk, A. Fasolino, M. I. Katsnelson, K. Watanabe, T. Taniguchi, A. K. Geim, A. Mishchenko, K. S. Novoselov

Abstract: Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields like radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those which allow fine control over the motion on atomic scale due to self-alignment mechanisms and forces acting on the atomic level. Such machines can produce well-… ▽ More Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields like radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those which allow fine control over the motion on atomic scale due to self-alignment mechanisms and forces acting on the atomic level. Such machines can produce well-controlled movements as a reaction to small changes of the external parameters. Here we demonstrate that, for the system of graphene on hexagonal boron nitride, the interplay between the van der Waals and elastic energies results in graphene mechanically self-rotating towards the hexagonal boron nitride crystallographic directions. Such rotation is macroscopic (for graphene flakes of tens of micrometres the tangential movement can be on hundreds of nanometres) and can be used for reproducible manufacturing of aligned van der Waals heterostructures. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Comments: 32 pages, 17 figures, includes supplementary information, published in Nature Communications (2016)

Journal ref: Nature Communications 7, Article number:10800, 2016

Temperature-driven massless Kane fermions in HgCdTe crystals: verification of universal velocity and rest-mass description

Authors: F. Teppe, M. Marcinkiewicz, S. S. Krishtopenko, S. Ruffenach, C. Consejo, A. M. Kadykov, W. Desrat, D. But, W. Knap, J. Ludwig, S. Moon, D. Smirnov, M. Orlita, Z. Jiang, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii

Abstract: It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously… ▽ More It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying either the cadmium content or temperature. At the critical concentration or temperature, the bandgap, Eg, collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest-mass of the Dirac-like Kane fermions, m changes sign at the critical temperature, while their velocity, c remains constant. The relation Eg = 2mc2 with the universal value of c = (1.07 +- 0.05)10x6 m/s remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Dirac-like Kane fermions in HgCdTe. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Comments: 15 pages, 6 figures

Journal ref: Nature Communications 7, Article number: 12576 (2016)

High thermal conductivity of hexagonal boron nitride laminates

Authors: Jin-Cheng Zheng, Liang Zhang, Andrey V Kretinin, Sergei V Morozov, Yi Bo Wang, Tun Wang, Xiaojun Li, Fei Ren, Jingyu Zhang, Ching-Yu Lu, Jia-Cing Chen, Miao Lu, Hui-Qiong Wang, Andre K Geim, Konstantin S Novoselov

Abstract: Two-dimensional materials are characterised by a number of unique physical properties which can potentially make them useful to a wide diversity of applications. In particular, the large thermal conductivity of graphene and hexagonal boron nitride has already been acknowledged and these materials have been suggested as novel core materials for thermal management in electronics. However, it was not… ▽ More Two-dimensional materials are characterised by a number of unique physical properties which can potentially make them useful to a wide diversity of applications. In particular, the large thermal conductivity of graphene and hexagonal boron nitride has already been acknowledged and these materials have been suggested as novel core materials for thermal management in electronics. However, it was not clear if mass produced flakes of hexagonal boron nitride would allow one to achieve an industrially-relevant value of thermal conductivity. Here we demonstrate that laminates of hexagonal boron nitride exhibit thermal conductivity of up to 20 W/mK, which is significantly larger than that currently used in thermal management. We also show that the thermal conductivity of laminates increases with the increasing volumetric mass density, which creates a way of fine-tuning its thermal properties. △ Less

Submitted 14 December, 2015; originally announced December 2015.

Comments: 6 pages, 4 figures

Journal ref: 2D Materials 3, 011004 (2016)

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

Authors: E. E. Vdovin, A. Mishchenko, M. T. Greenaway, M. J. Zhu, D. Ghazaryan, A. Misra, Y. Cao, S. V. Morozov, O. Makarovsky, A. Patanè, G. J. Slotman, M. I. Katsnelson, A. K. Geim, K. S. Novoselov, L. Eaves

Abstract: We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence i… ▽ More We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states. △ Less

Submitted 8 December, 2015; v1 submitted 7 December, 2015; originally announced December 2015.

Journal ref: Phys. Rev. Lett. 116, 186603 (2016)

Resonant tunnelling between the chiral Landau states of twisted graphene lattices

Authors: M. T. Greenaway, E. E. Vdovin, A. Mishchenko, O. Makarovsky, A. Patanè, J. R. Wallbank, Y. Cao, A. V. Kretinin, M. J. Zhu, S. V. Morozov, V. I. Fal'ko, K. S. Novoselov, A. K. Geim, T. M. Fromhold, L. Eaves

Abstract: A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers t… ▽ More A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. An applied magnetic field quantises graphene's gapless conduction and valence band states into discrete Landau levels, allowing us to resolve individual inter-Landau level transitions and thereby demonstrate that the energy, momentum and chiral properties of the electrons are conserved in the tunnelling process. We also demonstrate that the change in the semiclassical cyclotron trajectories, following a tunnelling event, is a form of Klein tunnelling for inter-layer transitions. △ Less

Submitted 21 October, 2015; v1 submitted 21 September, 2015; originally announced September 2015.

Comments: in Nature Physics (2015)

Journal ref: Nature Physics 11, 1057-1062 (2015)

Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures

Authors: A. Mishchenko, J. S. Tu, Y. Cao, R. V. Gorbachev, J. R. Wallbank, M. T. Greenaway, V. E. Morozov, S. V. Morozov, M. J. Zhu, S. L. Wong, F. Withers, C. R. Woods, Y. -J. Kim, K. Watanabe, T. Taniguchi, E. E. Vdovin, O. Makarovsky, T. M. Fromhold, V. I. Falko, A. K. Geim, L. Eaves, K. S. Novoselov

Abstract: Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic… ▽ More Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology. △ Less

Submitted 8 September, 2014; originally announced September 2014.

Comments: For Supplementary Information see http://www.nature.com/nnano/journal/vaop/ncurrent/extref/nnano.2014.187-s1.pdf

Journal ref: Nature Nanotechnology 9, 808-813 (2014)

Interaction phenomena in graphene seen through quantum capacitance

Authors: G. L. Yu, R. Jalil, Branson Belle, Alexander S. Mayorov, Peter Blake, Frederick Schedin, Sergey V. Morozov, Leonid A. Ponomarenko, F. Chiappini, S. Wiedmann, Uli Zeitler, Mikhail I. Katsnelson, A. K. Geim, Kostya S. Novoselov, Daniel C. Elias

Abstract: Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the l… ▽ More Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the linear spectrum due to electron-electron interactions is observed in zero field. Quantizing fields lead to splitting of the spin- and valley-degenerate Landau levels into quartets separated by interaction-enhanced energy gaps. These many-body states exhibit negative compressibility but the compressibility returns to positive in ultrahigh B. The reentrant behavior is attributed to a competition between field-enhanced interactions and nascent fractional states. △ Less

Submitted 16 February, 2013; originally announced February 2013.

Journal ref: Proc. Natl Acad. Sci. USA 110, 3282-3286 (2013)

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Authors: Thanasis Georgiou, Rashid Jalil, Branson D. Belle, Liam Britnell, Roman V. Gorbachev, Sergey V. Morozov, Yong-Jin Kim, Ali Gholinia, Sarah J. Haigh, Oleg Makarovsky, Laurence Eaves, Leonid A. Ponomarenko, Andre K. Geim, Kostya S. Novoselov, Artem Mishchenko

Abstract: The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating ph… ▽ More The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates. △ Less

Submitted 21 November, 2012; originally announced November 2012.

Journal ref: Nature Nanotechnology 8, 100-103 (2013)

How close can one approach the Dirac point in graphene experimentally?

Authors: Alexander S. Mayorov, Daniel C. Elias, Ivan S. Mukhin, Sergey V. Morozov, Leonid A. Ponomarenko, Kostya S. Novoselov, A. K. Geim, Roman V. Gorbachev

Abstract: The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogene… ▽ More The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap. △ Less

Submitted 3 September, 2012; v1 submitted 18 June, 2012; originally announced June 2012.

Journal ref: Nano Lett.12, 4629-4634 (2012)

Atomically thin boron nitride: a tunnelling barrier for graphene devices

Authors: Liam Britnell, Roman V. Gorbachev, Rashid Jalil, Branson D. Belle, Fred Schedin, Mikhail I. Katsnelson, Laurence Eaves, Sergey V. Morozov, Alexander S. Mayorov, Nuno M. R. Peres, Antonio H. Castro Neto, Jon Leist, Andre K. Geim, Leonid A. Ponomarenko, Kostya S. Novoselov

Abstract: We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/B… ▽ More We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel. △ Less

Submitted 3 February, 2012; originally announced February 2012.

Comments: 7 pages, 5 figures

Journal ref: Nano Lett., 2012, 12 (3), pp 1707-1710

Field-effect tunneling transistor based on vertical graphene heterostructures

Authors: L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, L. A. Ponomarenko

Abstract: We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure… ▽ More We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration. △ Less

Submitted 21 December, 2011; originally announced December 2011.

Journal ref: Science 335 (6071) 947-950 (2012)

Terahertz detection in a slit-grating-gate field-effect-transistor structure

Authors: D. M. Yermolayev, K. M. Maremyanin, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, S. Yu. Shapoval, V. V. Popov

Abstract: We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency range. The frequencies of the photoresponse peaks correspond to the excitation of the plasmon resonances in the structure channel. The obtained responsivity exceed… ▽ More We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency range. The frequencies of the photoresponse peaks correspond to the excitation of the plasmon resonances in the structure channel. The obtained responsivity exceeds the responsivity reported previously for similar plasmonic terahertz detectors by two orders of magnitude due to enhanced coupling between incoming terahertz radiation and plasmon oscillations in the slit-grating-gate field-effect transistor structure. △ Less

Submitted 9 October, 2011; originally announced October 2011.

Comments: 9 pages, 3 figures

High-Yield Production and Transfer of Graphene Flakes Obtained by Anodic Bonding

Authors: Thomas Moldt, Axel Eckmann, Philipp Klar, Sergey V. Morozov, Alexander A. Zhukov, Kostya S. Novoselov, Cinzia Casiraghi

Abstract: We report large-yield production of graphene flakes on glass by anodic bonding. Under optimum conditions, we counted several tens of flakes with lateral size around 20-30 μみゅーm and few tens of flakes with larger size. 60-70% of the flakes have negligible D peak. We show that it is possible to easily transfer the flakes by wedging technique. The transfer on silicon does not damage graphene and lowers… ▽ More We report large-yield production of graphene flakes on glass by anodic bonding. Under optimum conditions, we counted several tens of flakes with lateral size around 20-30 μみゅーm and few tens of flakes with larger size. 60-70% of the flakes have negligible D peak. We show that it is possible to easily transfer the flakes by wedging technique. The transfer on silicon does not damage graphene and lowers the doping. The charge mobility of the transferred flakes on silicon is of the order of 6000 cm^2/V s (at carrier concentration of 10^12 cm^-2), which is typical for devices prepared on this substrate with exfoliated graphene. △ Less

Submitted 15 September, 2011; originally announced September 2011.

Comments: 17 pages, 6 figures; ACS Nano 2011

Interaction-Driven Spectrum Reconstruction in Bilayer Graphene

Authors: A. S. Mayorov, D. C. Elias, M. Mucha-Kruczynski, R. V. Gorbachev, T. Tudorovskiy, A. Zhukov, S. V. Morozov, M. I. Katsnelson, V. I. Fal'ko, A. K. Geim, K. S. Novoselov

Abstract: The nematic phase transition in electronic liquids, driven by Coulomb interactions, represents a new class of strongly correlated electronic ground states. We studied suspended samples of bilayer graphene, annealed so that it achieves very high quasiparticle mobilities. Bilayer graphene is a truly two-dimensional material with complex chiral electronic spectra and the high quality of our samples a… ▽ More The nematic phase transition in electronic liquids, driven by Coulomb interactions, represents a new class of strongly correlated electronic ground states. We studied suspended samples of bilayer graphene, annealed so that it achieves very high quasiparticle mobilities. Bilayer graphene is a truly two-dimensional material with complex chiral electronic spectra and the high quality of our samples allowed us to observe strong spectrum reconstructions and electron topological transitions that can be attributed to a nematic phase transition and a decrease in rotational symmetry. These results are especially surprising because no interaction effects have been observed so far in bilayer graphene in the absence of an applied magnetic field. △ Less

Submitted 8 August, 2011; originally announced August 2011.

Journal ref: Science 333(6044) pp. 860-863 (2011)

Tunable metal-insulator transition in double-layer graphene heterostructures

Authors: L. A. Ponomarenko, A. K. Geim, A. A. Zhukov, R. Jalil, S. V. Morozov, K. S. Novoselov, V. V. Cheianov, V. I. Fal'ko, K. Watanabe, T. Taniguchi, R. V. Gorbachev

Abstract: We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a minimum metallic conductivity at the neutrality point, and its resistivity diverges at low temperatures. This divergence can be suppressed by magnetic field or by re… ▽ More We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a minimum metallic conductivity at the neutrality point, and its resistivity diverges at low temperatures. This divergence can be suppressed by magnetic field or by reducing the carrier density in the adjacent layer. We believe that the observed localization is intrinsic for neutral graphene with generic disorder if metallic electron-hole puddles are screened out. △ Less

Submitted 12 December, 2011; v1 submitted 1 July, 2011; originally announced July 2011.

Journal ref: Nature Physics 7, 958-961 (2011)

Giant Nonlocality near the Dirac Point in Graphene

Authors: D. A. Abanin, S. V. Morozov, L. A. Ponomarenko, R. V. Gorbachev, A. S. Mayorov, M. I. Katsnelson, K. Watanabe, T. Taniguchi, K. S. Novoselov, L. S. Levitov, A. K. Geim

Abstract: Transport measurements have been a powerful tool for uncovering new electronic phenomena in graphene. We report nonlocal measurements performed in the Hall bar geometry with voltage probes far away from the classical path of charge flow. We observe a large nonlocal response near the Dirac point in fields as low as 0.1T, which persists up to room temperature. The nonlocality is consistent with the… ▽ More Transport measurements have been a powerful tool for uncovering new electronic phenomena in graphene. We report nonlocal measurements performed in the Hall bar geometry with voltage probes far away from the classical path of charge flow. We observe a large nonlocal response near the Dirac point in fields as low as 0.1T, which persists up to room temperature. The nonlocality is consistent with the long-range flavor currents induced by lifting of spin/valley degeneracy. The effect is expected to contribute strongly to all magnetotransport phenomena near the neutrality point. △ Less

Submitted 12 April, 2011; originally announced April 2011.

Journal ref: Science 332, 328-330 (2011)

Dirac cones reshaped by interaction effects in suspended graphene

Authors: D. C. Elias, R. V. Gorbachev, A. S. Mayorov, S. V. Morozov, A. A. Zhukov, P. Blake, L. A. Ponomarenko, I. V. Grigorieva, K. S. Novoselov, F. Guinea, A. K. Geim

Abstract: We report measurements of the cyclotron mass in graphene for carrier concentrations n varying over three orders of magnitude. In contrast to the single-particle picture, the real spectrum of graphene is profoundly nonlinear so that the Fermi velocity describing the spectral slope reaches ~3x10^6 m/s at n <10^10 cm^-2, three times the value commonly used for graphene. The observed changes are attri… ▽ More We report measurements of the cyclotron mass in graphene for carrier concentrations n varying over three orders of magnitude. In contrast to the single-particle picture, the real spectrum of graphene is profoundly nonlinear so that the Fermi velocity describing the spectral slope reaches ~3x10^6 m/s at n <10^10 cm^-2, three times the value commonly used for graphene. The observed changes are attributed to electron-electron interaction that renormalizes the Dirac spectrum because of weak screening. Our experiments also put an upper limit of ~0.1 meV on the possible gap in graphene. △ Less

Submitted 3 September, 2011; v1 submitted 7 April, 2011; originally announced April 2011.

Journal ref: Nature Phys. 7, 701-704 (2011)

Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Authors: A. S. Mayorov, R. V. Gorbachev, S. V. Morozov, L. Britnell, R. Jalil, L. A. Ponomarenko, P. Blake, K. S. Novoselov, K. Watanabe, T. Taniguchi, A. K. Geim

Abstract: Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use o… ▽ More Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric. △ Less

Submitted 10 June, 2011; v1 submitted 23 March, 2011; originally announced March 2011.

Journal ref: Nano Lett. 11, 2396-2399 (2011)

Graphene as a transparent conductive support for studying biological molecules by transmission electron microscopy

Authors: R. R. Nair, P. Blake, J. R. Blake, R. Zan, S. Anissimova, U. Bangert, A. P. Golovanov, S. V. Morozov, T. Latychevskaia, A. K. Geim, K. S. Novoselov

Abstract: We demonstrate the application of graphene as a support for imaging individual biological molecules in transmission electron microscope (TEM). A simple procedure to produce free-standing graphene membranes has been designed. Such membranes are extremely robust and can support practically any sub-micrometer object. Tobacco mosaic virus has been deposited on graphene samples and observed in a TEM. H… ▽ More We demonstrate the application of graphene as a support for imaging individual biological molecules in transmission electron microscope (TEM). A simple procedure to produce free-standing graphene membranes has been designed. Such membranes are extremely robust and can support practically any sub-micrometer object. Tobacco mosaic virus has been deposited on graphene samples and observed in a TEM. High contrast has been achieved even though no staining has been applied. △ Less

Submitted 23 October, 2010; originally announced October 2010.

Journal ref: Appl. Phys. Lett. 97, 153102 (2010)

From One Electron to One Hole: Quasiparticle Counting in Graphene Quantum Dots Determined by Electrochemical and Plasma Etching

Authors: S. Neubeck, L. A. Ponomarenko, F. Freitag, A. J. M. Giesbers, U. Zeitler, S. V. Morozov, P. Blake, A. K. Geim, K. S. Novoselov

Abstract: Graphene is considered to be a promising material for future electronics. The envisaged transistor applications often rely on precision cutting of graphene sheets with nanometer accuracy. In this letter we demonstrate graphene-based quantum dots created by using atomic force microscopy (AFM) with tip-assisted electrochemical etching. This lithography technique provides resolution of about 20 nm, w… ▽ More Graphene is considered to be a promising material for future electronics. The envisaged transistor applications often rely on precision cutting of graphene sheets with nanometer accuracy. In this letter we demonstrate graphene-based quantum dots created by using atomic force microscopy (AFM) with tip-assisted electrochemical etching. This lithography technique provides resolution of about 20 nm, which can probably be further improved by employing sharper tips and better humidity control. The behavior of our smallest dots in magnetic field has allowed us to identify the charge neutrality point and distinguish the states with one electron, no charge and one hole left inside the quantum dot. △ Less

Submitted 26 July, 2010; originally announced July 2010.

Journal ref: Small 6, 1469-1473 (2010)

Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point

Authors: P. Blake, R. Yang, S. V. Morozov, F. Schedin, L. A. Ponomarenko, A. A. Zhukov, I. V. Grigorieva, K. S. Novoselov, A. K. Geim

Abstract: There is an increasing amount of literature concerning electronic properties of graphene close to the neutrality point. Many experiments continue using the two-probe geometry or invasive contacts or do not control samples' macroscopic homogeneity. We believe that it is helpful to point out some problems related to such measurements. By using experimental examples, we illustrate that the charge i… ▽ More There is an increasing amount of literature concerning electronic properties of graphene close to the neutrality point. Many experiments continue using the two-probe geometry or invasive contacts or do not control samples' macroscopic homogeneity. We believe that it is helpful to point out some problems related to such measurements. By using experimental examples, we illustrate that the charge inhomogeneity induced by spurious chemical doping or metal contacts can lead to large systematic errors in assessing graphene's transport properties and, in particular, its minimal conductivity. The problems are most severe in the case of two-probe measurements where the contact resistance is found to strongly vary as a function of gate voltage. △ Less

Submitted 20 June, 2009; v1 submitted 10 November, 2008; originally announced November 2008.

Journal ref: Solid State Commun 149, 1068-1071 (2009)

Control of graphene's properties by reversible hydrogenation

Authors: D. C. Elias, R. R. Nair, T. M. G. Mohiuddin, S. V. Morozov, P. Blake, M. P. Halsall, A. C. Ferrari, D. W. Boukhvalov, M. I. Katsnelson, A. K. Geim, K. S. Novoselov

Abstract: Graphene - a monolayer of carbon atoms densely packed into a hexagonal lattice - has one of the strongest possible atomic bonds and can be viewed as a robust atomic-scale scaffold, to which other chemical species can be attached without destroying it. This notion of graphene as a giant flat molecule that can be altered chemically is supported by the observation of so-called graphene oxide, that… ▽ More Graphene - a monolayer of carbon atoms densely packed into a hexagonal lattice - has one of the strongest possible atomic bonds and can be viewed as a robust atomic-scale scaffold, to which other chemical species can be attached without destroying it. This notion of graphene as a giant flat molecule that can be altered chemically is supported by the observation of so-called graphene oxide, that is graphene densely covered with hydroxyl and other groups. Unfortunately, graphene oxide is strongly disordered, poorly conductive and difficult to reduce to the original state. Nevertheless, one can imagine atoms or molecules being attached to the atomic scaffold in a strictly periodic manner, which should result in a different electronic structure and, essentially, a different crystalline material. A hypothetical example for this is graphane, a wide-gap semiconductor, in which hydrogen is bonded to each carbon site of graphene. Here we show that by exposing graphene to atomic hydrogen, it is possible to transform this highly-conductive semimetal into an insulator. Transmission electron microscopy reveals that the material retains the hexagonal lattice but its period becomes markedly shorter than that of graphene, providing direct evidence for a new graphene-based derivative. The reaction with hydrogen is found to be reversible so that the original metallic state and lattice spacing are restored by annealing and even the quantum Hall effect recovers. Our work proves the concept of chemical modification of graphene, which promises a whole range of new two-dimensional crystals with designed electronic and other properties. △ Less

Submitted 26 October, 2008; originally announced October 2008.

Journal ref: Science 323, 610-613 (2009)

Electronic properties of a biased graphene bilayer

Authors: Eduardo V. Castro, K. S. Novoselov, S. V. Morozov, N. M. R. Peres, J. M. B. Lopes dos Santos, Johan Nilsson, F. Guinea, A. K. Geim, A. H. Castro Neto

Abstract: We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compare… ▽ More We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t'$ (in-plane) and $γがんま_{4}$ (inter-layer), and the on-site energy $Δでるた$. △ Less

Submitted 28 April, 2010; v1 submitted 21 July, 2008; originally announced July 2008.

Comments: 15 pages, 9 figures, published shorter version

Journal ref: J. Phys.: Condens. Matter 22, 175503 (2010)

Graphene-Based Liquid Crystal Device

Authors: P. Blake, P. D. Brimicombe, R. R. Nair, T. J. Booth, D. Jiang, F. Schedin, L. A. Ponomarenko, S. V. Morozov, H. F. Gleeson, E. W. Hill, A. K. Geim, K. S. Novoselov

Abstract: Graphene is only one atom thick, optically transparent, chemically inert and an excellent conductor. These properties seem to make this material an excellent candidate for applications in various photonic devices that require conducting but transparent thin films. In this letter we demonstrate liquid crystal devices with electrodes made of graphene which show excellent performance with a high co… ▽ More Graphene is only one atom thick, optically transparent, chemically inert and an excellent conductor. These properties seem to make this material an excellent candidate for applications in various photonic devices that require conducting but transparent thin films. In this letter we demonstrate liquid crystal devices with electrodes made of graphene which show excellent performance with a high contrast ratio. We also discuss the advantages of graphene compared to conventionally-used metal oxides in terms of low resistivity, high transparency and chemical stability. △ Less

Submitted 20 March, 2008; originally announced March 2008.

Journal ref: Nano Lett., 8 (6), 1704--1708, 2008.

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

Authors: S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, A. K. Geim

Abstract: We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like… ▽ More We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons. △ Less

Submitted 7 January, 2008; v1 submitted 28 October, 2007; originally announced October 2007.

Journal ref: Phys. Rev. Lett. 100, 016602 (2008)

Molecular Doping of Graphene

Authors: T. O. Wehling, K. S. Novoselov, S. V. Morozov, E. E. Vdovin, M. I. Katsnelson, A. K. Geim, A. I. Lichtenstein

Abstract: Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport under ambient conditions [1-4]. The latter makes graphene a promising material for future electronics and the recently demonstrated possibility of chemical do… ▽ More Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport under ambient conditions [1-4]. The latter makes graphene a promising material for future electronics and the recently demonstrated possibility of chemical doping without significant change in mobility has improved graphene's prospects further [13]. However, to find optimal dopants and, more generally, to progress towards graphene-based electronics requires understanding the physical mechanism behind the chemical doping, which has been lacking so far. Here, we present the first joint experimental and theoretical investigation of adsorbates on graphene. We elucidate a general relation between the doping strength and whether or not adsorbates have a magnetic moment: The paramagnetic single NO2 molecule is found to be a strong acceptor, whereas its diamagnetic dimer N2O4 causes only weak doping. This effect is related to the peculiar density of states of graphene, which provides an ideal situation for model studies of doping effects in semiconductors. Furthermore, we explain recent results on its "chemical sensor" properties, in particular, the possibility to detect a single NO2 molecule [13]. △ Less

Submitted 15 March, 2007; originally announced March 2007.

Comments: 5 pages, 4 figures

Journal ref: Nano Lett. 8; 173-177 (2008) (revised version, there)

Room-Temperature Quantum Hall Effect in Graphene

Authors: K. S. Novoselov, Z. Jiang, Y. Zhang, S. V. Morozov, H. L. Stormer, U. Zeitler, J. C. Maan, G. S. Boebinger, P. Kim, A. K. Geim

Abstract: The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed… ▽ More The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed at liquid-helium temperatures. Here, we show that in graphene - a single atomic layer of carbon - the QHE can reliably be measured even at room temperature, which is not only surprising and inspirational but also promises QHE resistance standards becoming available to a broader community, outside a few national institutions. △ Less

Submitted 17 February, 2007; originally announced February 2007.

Comments: Published in Science online 15 February 2007

Journal ref: Science 315, 1379 (2007).

Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

Authors: Eduardo V. Castro, K. S. Novoselov, S. V. Morozov, N. M. R. Peres, J. M. B. Lopes dos Santos, Johan Nilsson, F. Guinea, A. K. Geim, A. H. Castro Neto

Abstract: We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to mid-infrared energies to a value as larg… ▽ More We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to mid-infrared energies to a value as large as 0.3 eV by using fields of < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime. △ Less

Submitted 16 November, 2007; v1 submitted 13 November, 2006; originally announced November 2006.

Comments: 4 pages, 5 figures. To appear in Physical Review Letters, November 2007

Journal ref: Phys. Rev. Lett. 99, 216802 (2007)

Detection of Individual Gas Molecules Absorbed on Graphene

Authors: F. Schedin, A. K. Geim, S. V. Morozov, D. Jiang, E. H. Hill, P. Blake, K. S. Novoselov

Abstract: The ultimate aspiration of any detection method is to achieve such a level of sensitivity that individual quanta of a measured value can be resolved. In the case of chemical sensors, the quantum is one atom or molecule. Such resolution has so far been beyond the reach of any detection technique, including solid-state gas sensors hailed for their exceptional sensitivity. The fundamental reason li… ▽ More The ultimate aspiration of any detection method is to achieve such a level of sensitivity that individual quanta of a measured value can be resolved. In the case of chemical sensors, the quantum is one atom or molecule. Such resolution has so far been beyond the reach of any detection technique, including solid-state gas sensors hailed for their exceptional sensitivity. The fundamental reason limiting the resolution of such sensors is fluctuations due to thermal motion of charges and defects which lead to intrinsic noise exceeding the sought-after signal from individual molecules, usually by many orders of magnitude. Here we show that micrometre-size sensors made from graphene are capable of detecting individual events when a gas molecule attaches to or detaches from graphenes surface. The adsorbed molecules change the local carrier concentration in graphene one by one electron, which leads to step-like changes in resistance. The achieved sensitivity is due to the fact that graphene is an exceptionally low-noise material electronically, which makes it a promising candidate not only for chemical detectors but also for other applications where local probes sensitive to external charge, magnetic field or mechanical strain are required. △ Less

Submitted 19 August, 2007; v1 submitted 29 October, 2006; originally announced October 2006.

Comments: the final version is significantly different from the earlier 2006 version

Journal ref: Nature Materials 6, 652-655 (2007)

Strong suppression of weak (anti)localization in graphene

Authors: S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, L. A. Ponomarenko, D. Jiang, A. K. Geim

Abstract: Low-field magnetoresistance is ubiquitous in low-dimensional metallic systems with high resistivity and well understood as arising due to quantum interference on self-intersecting diffusive trajectories. We have found that in graphene this weak-localization magnetoresistance is strongly suppressed and, in some cases, completely absent. This unexpected observation is attributed to mesoscopic corr… ▽ More Low-field magnetoresistance is ubiquitous in low-dimensional metallic systems with high resistivity and well understood as arising due to quantum interference on self-intersecting diffusive trajectories. We have found that in graphene this weak-localization magnetoresistance is strongly suppressed and, in some cases, completely absent. This unexpected observation is attributed to mesoscopic corrugations of graphene sheets which cause a dephasing effect similar to that of a random magnetic field. △ Less

Submitted 29 June, 2006; v1 submitted 30 March, 2006; originally announced March 2006.

Comments: improved presentation of the theory part after referees comments; important experimental info added (see "note added in proof")

Journal ref: Phys. Rev. Lett. 97, 016801 (2006)

Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene

Authors: K. S. Novoselov, E. McCann, S. V. Morozov, V. I. Falko, M. I. Katsnelson, U. Zeitler, D. Jiang, F. Schedin, A. K. Geim

Abstract: There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry's phase pi, which results in a shifted positions of Hall plateaus. Here we report… ▽ More There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry's phase pi, which results in a shifted positions of Hall plateaus. Here we report a third type of the integer quantum Hall effect. Charge carriers in bilayer graphene have a parabolic energy spectrum but are chiral and exhibit Berry's phase 2pi affecting their quantum dynamics. The Landau quantization of these fermions results in plateaus in Hall conductivity at standard integer positions but the last (zero-level) plateau is missing. The zero-level anomaly is accompanied by metallic conductivity in the limit of low concentrations and high magnetic fields, in stark contrast to the conventional, insulating behavior in this regime. The revealed chiral fermions have no known analogues and present an intriguing case for quantum-mechanical studies. △ Less

Submitted 23 February, 2006; originally announced February 2006.

Comments: to appear in Nature Physics

Journal ref: Nature Physics 2, 177-180 (2006)

Two-Dimensional Gas of Massless Dirac Fermions in Graphene

Authors: K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, A. A. Firsov

Abstract: Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective "speed of light" c* ~10^6m/s. Ou… ▽ More Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective "speed of light" c* ~10^6m/s. Our studies of graphene - a single atomic layer of carbon - have revealed a variety of unusual phenomena characteristic of two-dimensional (2D) Dirac fermions. In particular, we have observed that a) the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; b) graphene's conductivity never falls below a minimum value corresponding to the conductance quantum e^2/h, even when carrier concentrations tend to zero; c) the cyclotron mass m of massless carriers with energy E in graphene is described by equation E =mc*^2; and d) Shubnikov-de Haas oscillations in graphene exhibit a phase shift of pi due to Berry's phase. △ Less

Submitted 13 September, 2005; originally announced September 2005.

Journal ref: Nature 438:197,2005

Two Dimensional Electron and Hole Gases at the Surface of Graphite

Authors: S. V. Morozov, K. S. Novoselov, D. Jiang, A. A. Firsov, S. V. Dubonos, A. K. Geim

Abstract: We report high-quality two-dimensional (2D) electron and hole gases induced at the surface of graphite by the electric field effect. The 2D carriers reside within a few near-surface atomic layers and exhibit mobilities up to 15,000 and 60,000 cm2/Vs at room and liquid-helium temperatures, respectively. The mobilities imply ballistic transport at micron scale. Pronounced Shubnikov-de Haas oscilla… ▽ More We report high-quality two-dimensional (2D) electron and hole gases induced at the surface of graphite by the electric field effect. The 2D carriers reside within a few near-surface atomic layers and exhibit mobilities up to 15,000 and 60,000 cm2/Vs at room and liquid-helium temperatures, respectively. The mobilities imply ballistic transport at micron scale. Pronounced Shubnikov-de Haas oscillations reveal the existence of two types of carries in both 2D electron and hole gases. △ Less

Submitted 12 May, 2005; originally announced May 2005.

Comments: related to cond-mat/0410631 where preliminary data for this experimental system were reported

Journal ref: Phys. Rev. B - Rapid Comm. 72, 201401 (2005)