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Comparative study of the electronic structures of the In and Sn/In2O3 (111) interfaces
Authors:
M. Nazarzahdemoafi,
F. Titze,
S. Machulik,
C. Janowitz,
Z. Galazka,
R. Manzke,
M. Mulazzi
Abstract:
The electronic structure of the transparent semiconductor In2O3 has been studied by angle resolved photoemission spectroscopy upon deposition of metallic indium and also tin on the surface of the semiconductor. By deposition of metallic indium on In2O3 (111) single crystals, we detected the formation of a free-electron like band of effective mass (0.38+-0.05) m0. At low coverages, metallic In shif…
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The electronic structure of the transparent semiconductor In2O3 has been studied by angle resolved photoemission spectroscopy upon deposition of metallic indium and also tin on the surface of the semiconductor. By deposition of metallic indium on In2O3 (111) single crystals, we detected the formation of a free-electron like band of effective mass (0.38+-0.05) m0. At low coverages, metallic In shifts the Fermi level of In2O3 to higher energies and a new electronic state forms at the metal/semiconductor interface. This state of two-dimensional character (2D-electron gas) is completely responsible for the electrical conduction in In2O3 (111) at the surface region and has a band dispersion, which does not correspond to the previously found surface accumulation layers in this material. Despite the similarity of the electronic properties of In and Sn, a larger downward banding was observed by Sn coverage, which was not accompanied by the appearance of the surface state.
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Submitted 28 October, 2015;
originally announced October 2015.
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Quantized electronic fine structure with large anisotropy in ferromagnetic Fe films
Authors:
C. Seibel,
A. Nuber,
H. Bentmann,
M. Mulazzi,
P. Blaha,
G. Sangiovanni,
F. Reinert
Abstract:
We report on the spectroscopic observation of a quantized electronic fine structure near the Fermi energy in thin Fe films grown on W(110). The quantum well states are detected down to binding energies of $\sim$10 meV by angle-resolved photoelectron spectroscopy. The band dispersion of these states is found to feature a pronounced anisotropy within the surface plane: It is free-electron like along…
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We report on the spectroscopic observation of a quantized electronic fine structure near the Fermi energy in thin Fe films grown on W(110). The quantum well states are detected down to binding energies of $\sim$10 meV by angle-resolved photoelectron spectroscopy. The band dispersion of these states is found to feature a pronounced anisotropy within the surface plane: It is free-electron like along the $\bar{Γ\rm{H}}$-direction while it becomes heavy along $\bar{Γ\rm{N}}$. Density functional theory calculations identify the observed states to have both majority and minority spin character and indicate that the large anisotropy can be dependent on the number of Fe-layers and coupling to the substrate.
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Submitted 9 March, 2015;
originally announced March 2015.
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Direct Observation of Interband Spin-Orbit Coupling in a Two-Dimensional Electron System
Authors:
Hendrik Bentmann,
Samir Abdelouahed,
Mattia Mulazzi,
Juergen Henk,
Friedrich Reinert
Abstract:
We report the direct observation of interband spin-orbit (SO) coupling in a two-dimensional (2D) surface electron system, in addition to the anticipated Rashba spin splitting. Using angle-resolved photoemission experiments and first-principles calculations on Bi/Ag/Au heterostructures we show that the effect strongly modifies the dispersion as well as the orbital and spin character of the 2D elect…
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We report the direct observation of interband spin-orbit (SO) coupling in a two-dimensional (2D) surface electron system, in addition to the anticipated Rashba spin splitting. Using angle-resolved photoemission experiments and first-principles calculations on Bi/Ag/Au heterostructures we show that the effect strongly modifies the dispersion as well as the orbital and spin character of the 2D electronic states, thus giving rise to considerable deviations from the Rashba model. The strength of the interband SO coupling is tuned by the thickness of the thin film structures.
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Submitted 28 March, 2012;
originally announced March 2012.
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Common Origin of the Circular-dichroism Pattern in ARPES of SrTiO3 and CuxBi2Se3
Authors:
Y. Ishida,
H. Kanto,
A. Kikkawa,
Y. Taguchi,
Y. Ito,
Y. Ota,
K. Okazaki,
W. Malaeb,
M. Mulazzi,
M. Okawa,
S. Watanabe,
C. -T. Chen,
M. Kim,
C. Bell,
Y. Kozuka,
H. Y. Hwang,
Y. Tokura,
S. Shin
Abstract:
Circular dichroism in the angular distribution (CDAD) of photoelectrons from SrTiO3:Nb and CuxBi2Se3 is investigated by 7-eV laser ARPES. In addition to the well-known node that occurs in CDAD when the incidence plane matches the mirror plane of the crystal, we show that another type of node occurs when the mirror plane of the crystal is vertical to the incidence plane and the electronic state is…
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Circular dichroism in the angular distribution (CDAD) of photoelectrons from SrTiO3:Nb and CuxBi2Se3 is investigated by 7-eV laser ARPES. In addition to the well-known node that occurs in CDAD when the incidence plane matches the mirror plane of the crystal, we show that another type of node occurs when the mirror plane of the crystal is vertical to the incidence plane and the electronic state is two dimensional. The flower-shaped CDAD's occurring around the Fermi level of SrTiO3:Nb and around the Dirac point of CuxBi2Se3 are explained on equal footings. We point out that the penetration depth of the topological states of CuxBi2Se3 depends on momentum.
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Submitted 22 August, 2011;
originally announced August 2011.
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Coherent heavy quasiparticles in CePt5 surface alloy
Authors:
M. Klein,
A. Nuber,
H. Schwab,
N. Tobita,
M. Higashiguchi,
J. Jiang,
S. Fukuda,
K. Tanaka,
K. Shimada,
M. Mulazzi,
F. F. Assaad,
F. Reinert
Abstract:
We report on the results of a high-resolution angle-resolved photoemission (ARPES) study on the ordered surface alloy CePt5. The temperature dependence of the spectra show the formation of the coherent low-energy heavy-fermion band near the Fermi level. This experimental data is supported by a multi-band model calculation in the framework of the dynamical mean field theory (DMFT).
We report on the results of a high-resolution angle-resolved photoemission (ARPES) study on the ordered surface alloy CePt5. The temperature dependence of the spectra show the formation of the coherent low-energy heavy-fermion band near the Fermi level. This experimental data is supported by a multi-band model calculation in the framework of the dynamical mean field theory (DMFT).
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Submitted 12 April, 2011;
originally announced April 2011.
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Out-of-plane nesting driven spin spiral in ultrathin Fe/Cu(001) films
Authors:
J. Miyawaki,
A. Chainani,
Y. Takata,
M. Mulazzi,
M. Oura,
Y. Senba,
H. Ohashi,
S. Shin
Abstract:
Epitaxial ultrathin Fe films on fcc Cu(001) exhibit a spin spiral (SS), in contrast to the ferromagnetism of bulk bcc Fe. We study the in-plane and out-of-plane Fermi surfaces (FSs) of the SS in 8 monolayer Fe/Cu(001) films using energy dependent soft x-ray momentum-resolved photoemission spectroscopy. We show that the SS originates in nested regions confined to out-of-plane FSs, which are drast…
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Epitaxial ultrathin Fe films on fcc Cu(001) exhibit a spin spiral (SS), in contrast to the ferromagnetism of bulk bcc Fe. We study the in-plane and out-of-plane Fermi surfaces (FSs) of the SS in 8 monolayer Fe/Cu(001) films using energy dependent soft x-ray momentum-resolved photoemission spectroscopy. We show that the SS originates in nested regions confined to out-of-plane FSs, which are drastically modified compared to in-plane FSs. From precise reciprocal space maps in successive zones, we obtain the associated real space compressive strain of 1.5+-0.5% along c-axis. An autocorrelation analysis quantifies the incommensurate ordering vector q=(2pi/a)(0,0,~0.86), favoring a SS and consistent with magneto-optic Kerr effect experiments. The results reveal the importance of in-plane and out-of-plane FS mapping for ultrathin films.
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Submitted 12 November, 2009;
originally announced November 2009.
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Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)
Authors:
M. Eddrief,
M. Marangolo,
V. H. Etgens,
S. Ustaze,
F. Sirotti,
M. Mulazzi,
G. Panaccione,
D. H. Mosca,
B. Lepine,
P. Schieffer
Abstract:
We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction study. Fe/ZnSe(001) is considered as an example of a very low reactivity interface system and it expected to constitute large Tunnel Magnetoresistance devices. We focus on the interface atomic environment, on the microsc…
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We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction study. Fe/ZnSe(001) is considered as an example of a very low reactivity interface system and it expected to constitute large Tunnel Magnetoresistance devices. We focus on the interface atomic environment, on the microscopic processes of the interface formation and on the iron valence-band. We show that the Fe contact with ZnSe induces a chemical conversion of the ZnSe outermost atomic layers. The main driving force that induces this rearrangement is the requirement for a stable Fe-Se bonding at the interface and a Se monolayer that floats at the Fe growth front. The released Zn atoms are incorporated in substitution in the Fe lattice position. This formation process is independent of the ZnSe surface termination (Zn or Se). The Fe valence-band evolution indicates that the d-states at the Fermi level show up even at submonolayer Fe coverage but that the Fe bulk character is only recovered above 10 monolayers. Indeed, the Fe 1-band states, theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fe junctions, are strongly modified at the FM/SC interface.
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Submitted 31 January, 2006;
originally announced January 2006.
