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Optimal Matching of Thermal Vibrations into Carbon Nanotubes
Authors:
K. G. S. H. Gunawardana,
Kieran Mullen
Abstract:
Carbon nanotubes (CNTs) are promising candidates to improve the thermal conductivity of nano-composites. The main obstacle to these applications is the extremely high thermal boundary (Kapitza) resistance between the CNTs and their matrix. In this theoretical work our goal is to maximize the heat flux through the CNT by functionalizing the CNT ends. We use a Landauer approach to calculate and opti…
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Carbon nanotubes (CNTs) are promising candidates to improve the thermal conductivity of nano-composites. The main obstacle to these applications is the extremely high thermal boundary (Kapitza) resistance between the CNTs and their matrix. In this theoretical work our goal is to maximize the heat flux through the CNT by functionalizing the CNT ends. We use a Landauer approach to calculate and optimize the energy flux from a soft to a hard material in one dimension through a connecting continuous medium of varying elasticity and density. The transmission probability of phonons through the system is calculated both numerically and analytically. We find that over 90% of the maximum heat flux into CNT is possible for 1nm length of the intermediate material at room temperature (300K).
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Submitted 10 April, 2024;
originally announced April 2024.
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Electrical Control of Exciton-Polariton Condensate Josephson Junctions
Authors:
Hua Wang,
Hong-Yi Xie,
Kieran Mullen
Abstract:
We propose the electrical control of a device probing the Josephson effect in exciton-polariton (EP) condensates, which can be switched between various dynamical modes. We model the device by a four-component Gross-Pitaevskii equation assuming that ideal EP condensates are established with well-balanced pumping and dissipation. All the model parameters are calculated microscopically. In particular…
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We propose the electrical control of a device probing the Josephson effect in exciton-polariton (EP) condensates, which can be switched between various dynamical modes. We model the device by a four-component Gross-Pitaevskii equation assuming that ideal EP condensates are established with well-balanced pumping and dissipation. All the model parameters are calculated microscopically. In particular, we obtain the polariton tunneling strength across the junction as a second-order process of electron-hole pair tunneling. We find that the EP condensates can be manipulated through distinctive degrees of freedom not present in other coherent quantum systems, and the dynamics of EP Josephson junctions are far richer than that of the conventional superconducting junctions.
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Submitted 4 March, 2024;
originally announced March 2024.
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Quantifying Alignment and Quality of Graphene Nanoribbons: A Polarized Raman Spectroscopy Approach
Authors:
Rimah Darawish,
Jan Overbeck,
Klaus Müllen,
Michel Calame,
Pascal Ruffieux,
Roman Fasel,
Gabriela Borin Barin
Abstract:
Graphene nanoribbons (GNRs) are atomically precise stripes of graphene with tunable electronic properties, making them promising for room-temperature switching applications like field-effect transistors (FETs). However, challenges persist in GNR processing and characterization, particularly regarding GNR alignment during device integration. In this study, we quantitatively assess the alignment and…
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Graphene nanoribbons (GNRs) are atomically precise stripes of graphene with tunable electronic properties, making them promising for room-temperature switching applications like field-effect transistors (FETs). However, challenges persist in GNR processing and characterization, particularly regarding GNR alignment during device integration. In this study, we quantitatively assess the alignment and quality of 9-atom-wide armchair graphene nanoribbons (9-AGNRs) on different substrates using polarized Raman spectroscopy. Our approach incorporates an extended model that describes GNR alignment through a Gaussian distribution of angles. We not only extract the angular distribution of GNRs but also analyze polarization-independent intensity contributions to the Raman signal, providing insights into surface disorder on the growth substrate and after substrate transfer. Our findings reveal that low-coverage samples grown on Au(788) exhibit superior uniaxial alignment compared to high-coverage samples, attributed to preferential growth along step edges, as confirmed by scanning tunneling microscopy (STM). Upon substrate transfer, the alignment of low-coverage samples deteriorates, accompanied by increased surface disorder. On the other hand, high-coverage samples maintain alignment and exhibit reduced disorder on the target substrate. Our extended model enables a quantitative description of GNR alignment and quality, facilitating the development of GNR-based nanoelectronic devices.
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Submitted 18 July, 2023;
originally announced July 2023.
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MoRe Electrodes with 10-nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons
Authors:
Damian Bouwmeester,
Talieh S. Ghiasi,
Gabriela Borin Barin,
Klaus Müllen,
Pascal Ruffieux,
Roman Fasel,
Herre S. J. van der Zant
Abstract:
Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nano-scale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we make electrical contact with 9-atom-wide armchair GNRs…
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Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nano-scale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we make electrical contact with 9-atom-wide armchair GNRs using superconducting alloy MoRe as well as Pd (as a reference), which are two of the metals providing low-resistance contacts to carbon nanotubes. We take a step towards contacting a single GNR by fabrication of electrodes with a needle-like geometry, with about 20 nm tip diameter and 10 nm separation. To preserve the nano-scale geometry of the contacts, we develop a PMMA-assisted technique to transfer the GNRs onto the pre-patterned electrodes. Our device characterizations as a function of bias-voltage and temperature, show a thermally-activated gate-tunable conductance in the GNR-MoRe-based transistors.
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Submitted 28 June, 2023;
originally announced June 2023.
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Tunable quantum dots from atomically precise graphene nanoribbons using a multi-gate architecture
Authors:
Jian Zhang,
Oliver Braun,
Gabriela Borin Barin,
Sara Sangtarash,
Jan Overbeck,
Rimah Darawish,
Michael Stiefel,
Roman Furrer,
Antonis Olziersky,
Klaus Müllen,
Ivan Shorubalko,
Abdalghani H. S. Daaoub,
Pascal Ruffieux,
Roman Fasel,
Hatef Sadeghi,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such…
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Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-gate FET geometry, consisting of an ultra-narrow finger gate and two side gates. We use high-resolution electron-beam lithography (EBL) for defining finger gates as narrow as 12 nm and combine them with graphene electrodes for contacting the GNRs. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior with rich Coulomb diamond patterns, suggesting that the GNRs form QDs that are connected both in series and in parallel. Moreover, we show that the additional gates enable differential tuning of the QDs in the nanojunction, providing the first step towards multi-gate control of GNR-based multi-dot systems.
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Submitted 27 October, 2022; v1 submitted 7 October, 2022;
originally announced October 2022.
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Ultimately-scaled electrodes for contacting individual atomically-precise graphene nanoribbons
Authors:
Jian Zhang,
Liu Qian,
Gabriela Borin Barin,
Abdalghani H. S. Daaoub,
Peipei Chen,
Klaus Müllen,
Sara Sangtarash,
Pascal Ruffieux,
Roman Fasel,
Hatef Sadeghi,
Jin Zhang,
Michel Calame,
Mickael L. Perrin
Abstract:
Bottom-up synthesized graphene nanoribbons (GNRs) are quantum materials that can be structured with atomic precision, providing unprecedented control over their physical properties. Accessing the intrinsic functionality of GNRs for quantum technology applications requires the manipulation of single charges, spins, or photons at the level of an individual GNR. However, experimentally, contacting in…
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Bottom-up synthesized graphene nanoribbons (GNRs) are quantum materials that can be structured with atomic precision, providing unprecedented control over their physical properties. Accessing the intrinsic functionality of GNRs for quantum technology applications requires the manipulation of single charges, spins, or photons at the level of an individual GNR. However, experimentally, contacting individual GNRs remains challenging due to their nanometer-sized width and length as well as their high density on the metallic growth substrate. Here, we demonstrate the contacting and electrical characterization of individual GNRs in a multi-gate device architecture using single-walled carbon nanotubes (SWNTs) as ultimately-scaled electrodes. The GNR-SWNT devices exhibit well-defined quantum transport phenomena, including Coulomb blockade, excited states, and Franck-Condon blockade, all characteristics pointing towards the contacting of an individual GNR. Combined with the multi-gate architecture, this contacting method opens a road for the integration of GNRs in quantum devices to exploit their topologically trivial and non-trivial nature.
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Submitted 9 September, 2022;
originally announced September 2022.
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Length-independent quantum transport through topological band states of graphene nanoribbons
Authors:
Song Jiang,
Fabrice Scheurer,
Qiang Sun,
Pascal Ruffieux,
Xuelin Yao,
Akimitsu Narita,
Klaus Mullen,
Roman Fasel,
Thomas Frederiksen,
Guillaume Schull
Abstract:
Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on the electronic transport characterization of an edge-modified GNR suspended between the tip of a scanning tunneling microscope (STM) and a Au(111) substrate. Di…
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Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on the electronic transport characterization of an edge-modified GNR suspended between the tip of a scanning tunneling microscope (STM) and a Au(111) substrate. Differential conductance measurements on this metal-GNR-metal junction reveal loss-less transport properties (inverse decay length $β< 0.001 /\overset{\circ}{\mathrm{A}}$) with high conductance ($\sim 0.1$ G$_0$) at low voltages (50 meV) over long distances ($z > 10$ nm). The transport behavior is sensitive to the coupling between ribbon and electrodes, an effect that is rationalized using tight-binding and density functional theory simulations. From extensive modelling we infer that the length-independent transport is a manifestation of band transport through topological valence states, which originate from the zigzag segments on the GNR edges.
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Submitted 5 August, 2022;
originally announced August 2022.
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Twisted bilayer zigzag-graphene nanoribbon junctions with tunable edge states
Authors:
Dongfei Wang,
De-Liang Bao,
Qi Zheng,
Chang-Tian Wang,
Shiyong Wang,
Peng Fan,
Shantanu Mishra,
Lei Tao,
Yao Xiao,
Li Huang,
Xinliang Feng,
Klaus Müllen,
Yu-Yang Zhang,
Roman Fasel,
Pascal Ruffieux,
Shixuan Du,
Hong-Jun Gao
Abstract:
Stacking two-dimensional layered materials such as graphene and transitional metal dichalcogenides with nonzero interlayer twist angles has recently become attractive because of the emergence of novel physical properties. Stacking of one-dimensional nanomaterials offers the lateral stacking offset as an additional parameter for modulating the resulting material properties. Here, we report that the…
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Stacking two-dimensional layered materials such as graphene and transitional metal dichalcogenides with nonzero interlayer twist angles has recently become attractive because of the emergence of novel physical properties. Stacking of one-dimensional nanomaterials offers the lateral stacking offset as an additional parameter for modulating the resulting material properties. Here, we report that the edge states of twisted bilayer zigzag graphene nanoribbons (TBZGNRs) can be tuned with both the twist angle and the stacking offset. Strong edge state variations in the stacking region are first revealed by density functional theory (DFT) calculations. We construct and characterize twisted bilayer zigzag graphene nanoribbon (TBZGNR) systems on a Au(111) surface using scanning tunneling microscopy. A detailed analysis of three prototypical orthogonal TBZGNR junctions exhibiting different stacking offsets by means of scanning tunneling spectroscopy reveals emergent near-zero-energy states. From a comparison with DFT calculations, we conclude that the emergent edge states originate from the formation of flat bands whose energy and spin degeneracy are highly tunable with the stacking offset. Our work highlights fundamental differences between 2D and 1D twistronics and spurs further investigation of twisted one-dimensional systems.
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Submitted 27 February, 2023; v1 submitted 4 July, 2022;
originally announced July 2022.
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Growth optimization and device integration of narrow-bandgap graphene nanoribbons
Authors:
Gabriela Borin Barin,
Qiang Sun,
Marco Di Giovannantonio,
Cheng-Zhuo Du,
Xiao-Ye Wang,
Juan Pablo Llinas,
Zafer Mutlu,
Yuxuan Lin,
Jan Wilhelm,
Jan Overbeck,
Colin Daniels,
Michael Lamparski,
Hafeesudeen Sahabudeen,
Mickael L. Perrin,
José I. Urgel,
Shantanu Mishra,
Amogh Kinikar,
Roland Widmer,
Samuel Stolz,
Max Bommert,
Carlo Pignedoli,
Xinliang Feng,
Michel Calame,
Klaus Müllen,
Akimitsu Narita
, et al. (4 additional authors not shown)
Abstract:
The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for succe…
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The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.
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Submitted 2 February, 2022;
originally announced February 2022.
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Scaling and Statistics of Bottom-Up Synthesized Armchair Graphene Nanoribbon Transistors
Authors:
Yuxuan Lin,
Zafer Mutlu,
Gabriela Borin Barin,
Jenny Hong,
Juan Pablo Llinas,
Akimitsu Narita,
Hanuman Singh,
Klaus Müllen,
Pascal Ruffieux,
Roman Fasel,
Jeffrey Bokor
Abstract:
Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a st…
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Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a strategy to connect the nanomaterial morphologies and the device performance through a Monte Carlo device model and apply it to understand the scaling trends of bottom-up synthesized armchair graphene nanoribbon (GNR) transistors. A new nanofabrication process is developed for GNR transistors with channel length down to 7 nm. The impacts of the GNR spatial distributions and the device geometries on the device performance are investigated systematically through comparison of experimental data with the model. Through this study, challenges and opportunities of transistor technologies based on bottom-up synthesized GNRs are pinpointed, paving the way to the further improvement of the GNR device performance for future transistor technology nodes.
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Submitted 23 January, 2022;
originally announced January 2022.
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Quantum-Electrodynamical Time-Dependent Density Functional Theory. I. A Gaussian Atomic Basis Implementation
Authors:
Junjie Yang,
Qi Ou,
Zheng Pei,
Hua Wang,
Binbin Weng,
Kieran Mullen,
Yihan Shao
Abstract:
Inspired by the formulation of quantum-electrodynamical time-dependent density functional theory (QED-TDDFT) by Rubio and coworkers, we propose an implementation that uses dimensionless amplitudes for describing the photonic contributions to QED-TDDFT electron-photon eigenstates. The leads to a symmetric QED-TDDFT coupling matrix, which is expected to facilitate the future development of analytic…
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Inspired by the formulation of quantum-electrodynamical time-dependent density functional theory (QED-TDDFT) by Rubio and coworkers, we propose an implementation that uses dimensionless amplitudes for describing the photonic contributions to QED-TDDFT electron-photon eigenstates. The leads to a symmetric QED-TDDFT coupling matrix, which is expected to facilitate the future development of analytic derivatives. Through a Gaussian atomic basis implementation of the QED-TDDFT method, we examined the effect of dipole self-energy, rotating wave approximation, and the Tamm-Dancoff approximation on the QED-TDDFT eigenstates of model compounds (ethene, formaldehyde, and benzaldehyde) in an optical cavity. We highlight, in the strong coupling regime, the role of higher-energy and off-resonance excited states with large transition dipole moments in the direction of the photonic field, which are automatically accounted for in our QED-TDDFT calculations and might substantially affect the energy and composition of polaritons associated with lower-energy electronic states.
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Submitted 21 May, 2021;
originally announced May 2021.
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Optimized Graphene Electrodes for contacting Graphene Nanoribbons
Authors:
Oliver Braun,
Jan Overbeck,
Maria El Abbassi,
Silvan Käser,
Roman Furrer,
Antonis Olziersky,
Alexander Flasby,
Gabriela Borin Barin,
Rimah Darawish,
Klaus Müllen,
Pascal Ruffieux,
Roman Fasel,
Ivan Shorubalko,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbo…
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Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes.
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Submitted 25 February, 2021;
originally announced February 2021.
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Automatic Learning of Topological Phase Boundaries
Authors:
Alexander Kerr,
Geo Jose,
Colin Riggert,
Kieran Mullen
Abstract:
Topological phase transitions, which do not adhere to Landau's phenomenological model (i.e. a spontaneous symmetry breaking process and vanishing local order parameters) have been actively researched in condensed matter physics. Machine learning of topological phase transitions has generally proved difficult due to the global nature of the topological indices. Only recently has the method of diffu…
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Topological phase transitions, which do not adhere to Landau's phenomenological model (i.e. a spontaneous symmetry breaking process and vanishing local order parameters) have been actively researched in condensed matter physics. Machine learning of topological phase transitions has generally proved difficult due to the global nature of the topological indices. Only recently has the method of diffusion maps been shown to be effective at identifying changes in topological order. However, previous diffusion map results required adjustments of two hyperparameters: a data length-scale and the number of phase boundaries. In this article we introduce a heuristic that requires no such tuning. This heuristic allows computer programs to locate appropriate hyperparameters without user input. We demonstrate this method's efficacy by drawing remarkably accurate phase diagrams in three physical models: the Haldane model of graphene, a generalization of the Su-Schreiffer-Haeger (SSH) model, and a model for a quantum ring with tunnel junctions. These diagrams are drawn, without human intervention, from a supplied range of model parameters.
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Submitted 25 October, 2020;
originally announced October 2020.
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Topological Effects in Tunneling-Coupled Systems of One-Dimensional Quantum Rings
Authors:
Colin Riggert,
Kieran Mullen
Abstract:
Using a model of idealized, crossed one-dimensional quantum wires we construct a novel model for a single electron on tunneling-coupled systems of one-dimensional quantum rings. We explore and find that topology can affect the energetics of the system, and can introduce frustration in the three ring case. We also study the special cases of an external magnetic field that controls the complex phase…
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Using a model of idealized, crossed one-dimensional quantum wires we construct a novel model for a single electron on tunneling-coupled systems of one-dimensional quantum rings. We explore and find that topology can affect the energetics of the system, and can introduce frustration in the three ring case. We also study the special cases of an external magnetic field that controls the complex phase of the tunneling matrix element, and introduce the knot theory concept of "writhe" as a new topological quantity for distinguishing one hole systems. We find that writhe not only determines the energetic response of the system to magnetic field strength, but is also responsible for a single particle topological quantum phase transition involving the ground state wave function winding number.
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Submitted 3 July, 2020;
originally announced July 2020.
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Coupled spin states in armchair graphene nanoribbons with asymmetric zigzag edge extensions
Authors:
Qiang Sun,
Xuelin Yao,
Oliver Groning,
Kristjan Eimre,
Carlo A. Pignedoli,
Klaus Müllen,
Akimitsu Narita,
Roman Fasel,
Pascal Ruffieux
Abstract:
Carbon-based magnetic structures promise significantly longer coherence times than traditional magnetic materials, which is of fundamental importance for spintronic applications. An elegant way of achieving carbon-based magnetic moments is the design of graphene nanostructures with an imbalanced occupation of the two sublattices forming the carbon honeycomb lattice. According to Lieb's theorem, th…
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Carbon-based magnetic structures promise significantly longer coherence times than traditional magnetic materials, which is of fundamental importance for spintronic applications. An elegant way of achieving carbon-based magnetic moments is the design of graphene nanostructures with an imbalanced occupation of the two sublattices forming the carbon honeycomb lattice. According to Lieb's theorem, this induces local magnetic moments that are proportional to the sublattice imbalance. Exact positioning of sublattice imbalanced nanostructures in graphene nanomaterials hence offers a route to control interactions between induced local magnetic moments and to obtain graphene nanomaterials with magnetically non-trivial ground states. Here, we show that such sublattice imbalanced nanostructures can be incorporated along a large band gap armchair graphene nanoribbon on the basis of asymmetric zigzag edge extensions, which is achieved by incorporating specifically designed precursor monomers during the bottom-up fabrication of the graphene nanoribbons. Scanning tunneling spectroscopy of an isolated and electronically decoupled zigzag edge extension reveals Hubbard-split states in accordance with theoretical predictions. Investigation of pairs of such zigzag edge extensions reveals ferromagnetic, antiferromagnetic or quenching of the magnetic interactions depending on the relative alignment of the asymmetric edge extensions. Moreover, a ferromagnetic spin chain is demonstrated for a periodic pattern of zigzag edge extensions along the nanoribbon axis. This work opens a route towards the design and fabrication of graphene nanoribbon-based spin chains with complex magnetic ground states.
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Submitted 28 July, 2020; v1 submitted 5 May, 2020;
originally announced May 2020.
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Giant magnetic exchange coupling in rhombus-shaped nanographenes with zigzag periphery
Authors:
Shantanu Mishra,
Xuelin Yao,
Qiang Chen,
Kristjan Eimre,
Oliver Groening,
Ricardo Ortiz,
Marco Di Giovannantonio,
Juan Carlos Sancho-Garcia,
Joaquin Fernandez-Rossier,
Carlo A. Pignedoli,
Klaus Muellen,
Pascal Ruffieux,
Akimitsu Narita,
Roman Fasel
Abstract:
Nanographenes with zigzag edges are predicted to manifest non-trivial pi-magnetism resulting from the interplay of hybridization of localized frontier states and Coulomb repulsion between valence electrons. This provides a chemically tunable platform to explore quantum magnetism at the nanoscale and opens avenues toward organic spintronics. The magnetic stability in nanographenes is thus far limit…
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Nanographenes with zigzag edges are predicted to manifest non-trivial pi-magnetism resulting from the interplay of hybridization of localized frontier states and Coulomb repulsion between valence electrons. This provides a chemically tunable platform to explore quantum magnetism at the nanoscale and opens avenues toward organic spintronics. The magnetic stability in nanographenes is thus far limited by the weak magnetic exchange coupling which remains below the room temperature thermal energy. Here, we report the synthesis of large rhombus-shaped nanographenes with zigzag periphery on gold and copper surfaces. Single-molecule scanning probe measurements unveil an emergent magnetic spin-singlet ground state with increasing nanographene size. The magnetic exchange coupling in the largest nanographene, determined by inelastic electron tunneling spectroscopy, exceeds 100 meV or 1160 K, which outclasses most inorganic nanomaterials and remarkably survives on a metal electrode.
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Submitted 7 March, 2020;
originally announced March 2020.
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Controlled quantum dot formation in atomically engineered graphene nanoribbons field-effect transistors
Authors:
Maria El Abbassi,
Mickael Perrin,
Gabriela Borin Barin,
Sara Sangtarash,
Jan Overbeck,
Oliver Braun,
Colin Lambert,
Qiang Sun,
Thorsten Prechtl,
Akimitsu Narita,
Klaus Mullen,
Pascal Ruffieux,
Hatef Sadeghi,
Roman Fasel,
Michel Calame
Abstract:
Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size ($<$50 nm), as well as the preservation of their physical properties upon device integration. In this combi…
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Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size ($<$50 nm), as well as the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot (QD) behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned 5-atoms wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5-nm nanogap. We demonstrate that the narrow-bandgap 5-AGNRs exhibit metal-like behavior resulting in linear IV curves for low bias voltages at room temperature and single-electron transistor behavior for temperatures below 150~K. By performing spectroscopy of the molecular levels at 13~K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNRs is accounted for. By demonstrating the preservation of the 5-AGNRs electronic properties upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realisation of more exotic GNR-based nano-electronic devices.
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Submitted 23 December, 2019;
originally announced December 2019.
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A Universal Length-Dependent Vibrational Mode in Graphene Nanoribbons
Authors:
Jan Overbeck,
Gabriela Borin Barin,
Colin Daniels,
Mickael L. Perrin,
Oliver Braun,
Qiang Sun,
Rimah Darawish,
Marta De Luca,
Xiao-Ye Wang,
Tim Dumslaff,
Akimitsu Narita,
Klaus Müllen,
Pascal Ruffieux,
Vincent Meunier,
Roman Fasel,
Michel Calame
Abstract:
Graphene nanoribbons (GNRs) have attracted considerable interest as their atomically tunable structure makes them promising candidates for future electronic devices. However, obtaining detailed information about the length of GNRs has been challenging and typically relies on low-temperature scanning tunneling microscopy. Such methods are ill-suited for practical device application and characteriza…
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Graphene nanoribbons (GNRs) have attracted considerable interest as their atomically tunable structure makes them promising candidates for future electronic devices. However, obtaining detailed information about the length of GNRs has been challenging and typically relies on low-temperature scanning tunneling microscopy. Such methods are ill-suited for practical device application and characterization. In contrast, Raman spectroscopy is a sensitive method for the characterization of GNRs, in particular for investigating their width and structure. Here, we report on a length-dependent, Raman active low-energy vibrational mode that is present in atomically precise, bottom-up synthesized armchair graphene nanoribbons (AGNRs). Our Raman study demonstrates that this mode is present in all families of AGNRs and provides information on their length. Our spectroscopic findings are corroborated by scanning tunneling microscopy images and supported by first-principles calculations that allow us to attribute this mode to a longitudinal acoustic phonon. Finally, we show that this mode is a sensitive probe for the overall structural integrity of the ribbons and their interaction with technologically relevant substrates.
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Submitted 14 December, 2019;
originally announced December 2019.
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Band Gap of Atomically Precise Graphene Nanoribbons as a Function of Ribbon Length and Termination
Authors:
Leopold Talirz,
Hajo Söde,
Shigeki Kawai,
Pascal Ruffieux,
Ernst Meyer,
Xinliang Feng,
Klaus Müllen,
Roman Fasel,
Carlo A. Pignedoli,
Daniele Passerone
Abstract:
We study the band gap of finite $N_A=7$ armchair graphene nanoribbons (7-AGNRs) on Au(111) through scanning tunneling microscopy/spectroscopy combined with density functional theory calculations. The band gap of 7-AGNRs with lengths of 6 nm and more is converged to within 0.1 eV of its bulk value of 2.3 eV, while the band gap opens by several hundred meV in very short 7-AGNRs. The termination has…
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We study the band gap of finite $N_A=7$ armchair graphene nanoribbons (7-AGNRs) on Au(111) through scanning tunneling microscopy/spectroscopy combined with density functional theory calculations. The band gap of 7-AGNRs with lengths of 6 nm and more is converged to within 0.1 eV of its bulk value of 2.3 eV, while the band gap opens by several hundred meV in very short 7-AGNRs. The termination has a significant effect on the band gap, doubly hydrogenated termini yielding a lower band gap than singly hydrogenated ones.
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Submitted 3 October, 2019;
originally announced October 2019.
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On-surface synthesis of antiaromatic and open-shell indeno[2,1-b]fluorene polymers and their lateral fusion into porous ribbons
Authors:
Marco Di Giovannantonio,
Kristjan Eimre,
Aliaksandr V. Yakutovich,
Qiang Chen,
Shantanu Mishra,
José I. Urgel,
Carlo A. Pignedoli,
Pascal Ruffieux,
Klaus Müllen,
Akimitsu Narita,
Roman Fasel
Abstract:
Polycyclic hydrocarbons have received great attention due to their potential role in organic electronics and, for open-shell systems with unpaired electron densities, in spintronics and da-ta storage. However, the intrinsic instability of polyradical hydrocarbons severely limits de-tailed investigations of their electronic structure. Here, we report the on-surface synthesis of conjugated polymers…
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Polycyclic hydrocarbons have received great attention due to their potential role in organic electronics and, for open-shell systems with unpaired electron densities, in spintronics and da-ta storage. However, the intrinsic instability of polyradical hydrocarbons severely limits de-tailed investigations of their electronic structure. Here, we report the on-surface synthesis of conjugated polymers consisting of indeno[2,1-b]fluorene units, which are antiaromatic and open-shell biradicaloids. The observed reaction products, which also include a non-benzenoid porous ribbon arising from lateral fusion of unprotected indeno[2,1-b]fluorene chains, have been characterized via low temperature scanning tunneling microscopy/spectroscopy and non-contact atomic force microscopy, complemented by density-functional theory calculations. These polymers present a low band gap when adsorbed on Au(111). Moreover, their pro-nounced antiaromaticity and radical character, elucidated by ab initio calculations, make them promising candidates for applications in electronics and spintronics. Further, they provide a rich playground to explore magnetism in low-dimensional organic nanomaterials.
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Submitted 29 August, 2019;
originally announced August 2019.
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Optimized substrates and measurement approaches for Raman spectroscopy of graphene nanoribbons
Authors:
Jan Overbeck,
Gabriela Borin Barin,
Colin Daniels,
Mickael Perrin,
Liangbo Liang,
Oliver Braun,
Rimah Darawish,
Bryanna Burkhardt,
Tim Dumslaff,
Xiao-Ye Wang,
Akimitsu Narita,
Klaus Müllen,
Vincent Meunier,
Roman Fasel,
Michel Calame,
Pascal Ruffieux
Abstract:
The on-surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication of atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain for GNR processing and characterization. In this contribution, we use Raman spectroscopy to characterize different types of GNRs on their growth substrate and t…
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The on-surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication of atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain for GNR processing and characterization. In this contribution, we use Raman spectroscopy to characterize different types of GNRs on their growth substrate and to track their quality upon substrate transfer. We present a Raman-optimized (RO) device substrate and an optimized mapping approach that allows for acquisition of high-resolution Raman spectra, achieving enhancement factors as high as 120 with respect to signals measured on standard SiO2/Si substrates. We show that this approach is well-suited to routinely monitor the geometry-dependent low-frequency modes of GNRs. In particular, we track the radial breathing-like mode (RBLM) and the shear-like mode (SLM) for 5-, 7- and 9-atom wide armchair GNRs (AGNRs) and compare their frequencies with first-principles calculations.
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Submitted 22 July, 2019; v1 submitted 3 July, 2019;
originally announced July 2019.
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Structure-dependent electrical properties of graphene nanoribbon devices with graphene electrodes
Authors:
Leonardo Martini,
Zongping Chen,
Neeraj Mishra,
Gabriela Borin Barin,
Paolo Fantuzzi,
Pascal Ruffieux,
Roman Fasel,
Xinliang Feng,
Akimitsu Narita,
Camilla Coletti,
Klaus Müllen,
Andrea Candini
Abstract:
Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consi…
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Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consisting of a film of armchair GNRs with different structures (namely width and/or length) as the transistor channel, contacted with narrowly spaced graphene sheets as the source-drain electrodes. By analyzing several tens of junctions for each individual GNR type, we observe that the values of the output current display a width-dependent behavior, indicating electronic bandgaps in good agreement with the predicted theoretical values. These results provide insights into the link between the ribbon structure and the device properties, which are fundamental for the development of GNR-based electronics.
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Submitted 8 February, 2019;
originally announced February 2019.
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Substrate transfer and ex situ characterization of on-surface synthesized graphene nanoribbons
Authors:
Gabriela Borin Barin,
Andrew Fairbrother,
Lukas Rotach,
Maxime Bayle,
Matthieu Paillet,
Liangbo Liang,
Vincent Meunier,
Roland Hauert,
Tim Dumslaff,
Akimitsu Narita,
Klaus Müllen,
Hafeesudeen Sahabudeen,
Reinhard Berger,
Xinliang Feng,
Roman Fasel,
Pascal Ruffieux
Abstract:
Recent progress in the on-surface synthesis of graphene nanoribbons (GNRs) has given access to atomically precise narrow GNRs with tunable electronic band gaps that makes them excellent candidates for room-temperature switching devices such as field-effect transistors (FET). However, in spite of their exceptional properties, significant challenges remain for GNR processing and characterization. Th…
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Recent progress in the on-surface synthesis of graphene nanoribbons (GNRs) has given access to atomically precise narrow GNRs with tunable electronic band gaps that makes them excellent candidates for room-temperature switching devices such as field-effect transistors (FET). However, in spite of their exceptional properties, significant challenges remain for GNR processing and characterization. This contribution addresses some of the most important challenges, including GNR fabrication scalability, substrate transfer, long-term stability under ambient conditions and ex situ characterization. We focus on 7- and 9-atom wide armchair graphene nanoribbons (i.e, 7-AGNR; and 9-AGNR) grown on 200 nm Au(111)/mica substrates using a high throughput system. Transfer of both, 7- and 9-AGNRs from their Au growth sub-strate onto various target substrates for additional characterization is accomplished utilizing a polymer-free method that avoids residual contamination. This results in a homogeneous GNR film morphology with very few tears and wrinkles, as examined by atomic force microscopy. Raman spectroscopy indicates no significant degradation of GNR quality upon substrate transfer, and reveals that GNRs have remarkable stability under ambient conditions over a 24-month period. The transferred GNRs are analyzed using multi-wavelength Raman spectroscopy, which provides detailed insight into the wavelength dependence of the width-specific vibrational modes. Finally, we characterize the optical properties of 7- and 9-AGNRs via ultra-violet-visible (UV-Vis) spectroscopy
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Submitted 18 January, 2019;
originally announced January 2019.
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Graphene Nanoribbons on Hexagonal Boron Nitride: Deposition and Transport Characterization
Authors:
Tobias Preis,
Christian Kick,
Andreas Lex,
Akimitsu Narita,
Yunbin Hu,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Müllen,
Dieter Weiss,
Jonathan Eroms
Abstract:
Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered domains aligned along the crystallographic axes of the hBN. Using electron beam lithography and metallization, we contacted the cGNRs with NiCr/Au, or Pd conta…
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Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered domains aligned along the crystallographic axes of the hBN. Using electron beam lithography and metallization, we contacted the cGNRs with NiCr/Au, or Pd contacts and measured their I-V-characteristics. The transport through the ribbons was dominated by the Schottky behavior of the contacts between the metal and the ribbon.
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Submitted 2 May, 2019; v1 submitted 16 October, 2018;
originally announced October 2018.
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Probing optical excitations in chevron-like armchair graphene nanoribbons
Authors:
Richard Denk,
Alberto Lodi-Rizzini,
Shudong Wang,
Michael Hohage,
Peter Zeppenfeld,
Jinming Cai,
Roman Fasel,
Pascal Ruffieux,
Reinhard Berger,
Z. Chen,
Akimitsu Narita,
Xiliang Feng,
Klaus Muellen,
Roberto Biagi,
Valentina De Renzi,
Deborah Prezzi,
Alice Ruini,
Andrea Ferretti
Abstract:
The bottom-up fabrication graphene nanoribbons (GNRs) has opened new opportunities to specifically control their electronic and optical properties by precisely controlling their atomic structure. Here, we address excitations in GNRs with periodic structural wiggles, so-called Chevron GNRs. Based on reflectance difference and high-resolution electron energy loss spectroscopies together with ab-init…
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The bottom-up fabrication graphene nanoribbons (GNRs) has opened new opportunities to specifically control their electronic and optical properties by precisely controlling their atomic structure. Here, we address excitations in GNRs with periodic structural wiggles, so-called Chevron GNRs. Based on reflectance difference and high-resolution electron energy loss spectroscopies together with ab-initio simulations, we demonstrate that their excited-state properties are dominated by strongly bound excitons. The spectral fingerprints corresponding to different reaction stages in their bottom-up fabrication are also unequivocally identified, allowing us to follow the exciton build-up from the starting monomer precursor to the final ribbon structure.
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Submitted 6 September, 2018;
originally announced September 2018.
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Charge transport mechanism in networks of armchair graphene nanoribbons
Authors:
Nils Richter,
Zongping Chen,
Alexander Tries,
Thorsten Prechtl,
Akimitsu Narita,
Klaus Müllen,
Kamal Asadi,
Mischa Bonn,
Mathias Kläui
Abstract:
In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons. Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applicatio…
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In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons. Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applications and the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on a network of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with unprecedented conductivity. We show formation of reliable Ohmic contacts and a yield of functional FETs close to unity by lamination of GNRs on the electrodes. Modeling the charge carrier transport in the networks reveals that this process is governed by inter-ribbon hopping mediated by nuclear tunneling, with a hopping length comparable to the physical length of the GNRs. Furthermore, we demonstrate that nuclear tunneling is a general charge transport characteristic of the GNR networks by using two different GNRs. Overcoming the challenge of low-yield single-ribbon transistors by the networks and identifying the corresponding charge transport mechanism puts GNR-based electronics in a new perspective.
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Submitted 4 June, 2018;
originally announced June 2018.
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Engineering of robust topological quantum phases in graphene nanoribbons
Authors:
Oliver Gröning,
Shiyong Wang,
Xuelin Yao,
Carlo A. Pignedoli,
Gabriela Borin Barin,
Colin Daniels,
Andrew Cupo,
Vincent Meunier,
Xinliang Feng,
Akimitsu Narita,
Klaus Müllen,
Pascal Ruffieux,
Roman Fasel
Abstract:
Here we present a flexible strategy to realize robust nanomaterials exhibiting valence electronic structures whose fundamental physics is described by the SSH-Hamiltonian. These solid-state materials are realized using atomically precise graphene nanoribbons (GNR). We demonstrate the controlled periodic coupling of topological boundary states at junctions of armchair GNRs of different widths to cr…
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Here we present a flexible strategy to realize robust nanomaterials exhibiting valence electronic structures whose fundamental physics is described by the SSH-Hamiltonian. These solid-state materials are realized using atomically precise graphene nanoribbons (GNR). We demonstrate the controlled periodic coupling of topological boundary states at junctions of armchair GNRs of different widths to create quasi-1D trivial and non-trivial electronic quantum phases. Their topological class is experimentally determined by drawing upon the bulk-boundary correspondence and measuring the presence (non-trivial) or absence (trivial) of localized end states by scanning tunneling spectroscopy (STS). The strategy we propose has the potential to tune the band width of the topological electronic bands close to the energy scale of proximity induced spin-orbit coupling or superconductivity, and may allow the realization of Kitaev like Hamiltonians and Majorana type end states.
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Submitted 17 May, 2018;
originally announced May 2018.
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Single photon emission from graphene quantum dots at room temperature
Authors:
S. Zhao,
J. Lavie,
L. Rondin,
L. Orcin-Chaix,
C. Diederichs,
Ph. Roussignol,
Y. Chassagneux,
C. Voisin,
K. Müllen,
A. Narita,
S. Campidelli,
J. S. Lauret
Abstract:
In the field of condensed matter, graphene plays a central role as an emerging material for nanoelectronics. Nevertheless, graphene is a semimetal, which constitutes a severe limitation for some future applications. Therefore, a lot of efforts are being made to develop semiconductor materials whose structure is compatible with the graphene lattice. In this perspective, little pieces of graphene re…
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In the field of condensed matter, graphene plays a central role as an emerging material for nanoelectronics. Nevertheless, graphene is a semimetal, which constitutes a severe limitation for some future applications. Therefore, a lot of efforts are being made to develop semiconductor materials whose structure is compatible with the graphene lattice. In this perspective, little pieces of graphene represent a promising alternative. In particular, their electronic, optical and spin properties can be in principle controlled by designing their size, shape and edges. As an example, graphene nanoribbons with zigzag edges have localized spin polarized states. Likewise, singlet-triplet energy splitting can be chosen by designing the structure of graphene quantum dots. Moreover, bottom-up molecular synthesis put these potentialities at our fingertips. Here, we report on a single emitter study that directly addresses the intrinsic properties of a single graphene quantum dot. In particular, we show that graphene quantum dots emit single photons at room temperature with a high purity, a high brightness and a good photostability. These results pave the way to the development of new quantum systems based on these nanoscale pieces of graphene.
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Submitted 27 February, 2018;
originally announced February 2018.
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A Comparison of Genetic Algorithms and Simulated Annealing in Maximizing the Thermal Conductivity of Discrete Massive Chains
Authors:
Alexander Kerr,
Kieran Mullen
Abstract:
Functions of chemical composition are complex and discrete in nature making it impossible to optimize them with gradient methods. Genetic algorithms, which do not use derivative information, are used to maximize the thermal conductivity of one-dimensional classical harmonic oscillators made from a fixed library of randomly generated molecular units. The ability for the genetic algorithm to build s…
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Functions of chemical composition are complex and discrete in nature making it impossible to optimize them with gradient methods. Genetic algorithms, which do not use derivative information, are used to maximize the thermal conductivity of one-dimensional classical harmonic oscillators made from a fixed library of randomly generated molecular units. The ability for the genetic algorithm to build structures with components having no physical increment is important in optimizing molecules with a library of unrelated polymer units. The performance of genetic algorithms in this problem is compared with simulated annealing. Hyper-parameters for these routines are selected from a grid search in order to optimize their expected solution strength. The solutions found via the genetic algorithm consistently outperform those of simulated annealing at the cost of longer computer time. Together, these algorithms are able to find thermal conductor candidates that mirror solutions in continuous media.
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Submitted 12 January, 2018;
originally announced January 2018.
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Pseudo-Magnetic Quantum Hall Effect In Oscillating Graphene
Authors:
Anita Bhagat,
Kieran Mullen
Abstract:
When a graphene layer is stressed, the strain alters the phase an electron accumulates hopping between sites in a way that can be modeled as arising from a pseudo-magnetic vector potential. We examine the case of an oscillating graphene ribbon and explore a new effect - an oscillating resistance arising from an oscillating quantum Hall effect. This pseudo-magneto-resistance is large, and depends u…
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When a graphene layer is stressed, the strain alters the phase an electron accumulates hopping between sites in a way that can be modeled as arising from a pseudo-magnetic vector potential. We examine the case of an oscillating graphene ribbon and explore a new effect - an oscillating resistance arising from an oscillating quantum Hall effect. This pseudo-magneto-resistance is large, and depends upon the frequency and the amplitude of the acoustic oscillations. We calculate the consequences for experiment.
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Submitted 31 October, 2017; v1 submitted 23 December, 2016;
originally announced December 2016.
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Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons
Authors:
Juan Pablo Llinas,
Andrew Fairbrother,
Gabriela Borin Barin,
Wu Shi,
Kyunghoon Lee,
Shuang Wu,
Byung Yong Choi,
Rohit Braganza,
Jordan Lear,
Nicholas Kau,
Wonwoo Choi,
Chen Chen,
Zahra Pedramrazi,
Tim Dumslaff,
Akimitsu Narita,
Xinliang Feng,
Klaus Müllen,
Felix Fischer,
Alex Zettl,
Pascal Ruffieux,
Eli Yablonovitch,
Michael Crommie,
Roman Fasel,
Jeffrey Bokor
Abstract:
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) dev…
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Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) devices with a thin, high-k gate dielectric and a 9-atom wide (0.95 nm) armchair GNR as the channel material, we demonstrate FETs with high on-current (Ion >1 uA at Vd = -1 V) and high Ion/Ioff ~10^5 at room temperature. We find that the performance of these devices is limited by tunnelling through the Schottky barrier (SB) at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high performance short-channel FETs with bottom-up synthesized armchair GNRs.
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Submitted 27 January, 2017; v1 submitted 21 May, 2016;
originally announced May 2016.
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Raman fingerprints of atomically precise graphene nanoribbons
Authors:
Ivan A. Verzhbitskiy,
Marzio De Corato,
Alice Ruini,
Elisa Molinari,
Akimitsu Narita,
Yunbin Hu,
Matthias Georg Schwab,
M. Bruna,
D. Yoon,
S. Milana,
Xinliang Feng,
Klaus Müllen,
Andrea C. Ferrari,
Cinzia Casiraghi,
Deborah Prezzi
Abstract:
Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is parti…
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Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs, and differentiates them from other sp2 carbon nanostructures.
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Submitted 13 May, 2016;
originally announced May 2016.
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Superlubricity of Graphene Nanoribbons on Gold Surfaces
Authors:
Shigeki Kawai,
Andrea Benassi,
Enrico Gnecco,
Hajo Soede,
Remy Pawlak,
Xinliang Feng,
Klaus Muellen,
Daniele Passerone,
Carlo A. Pignedoli,
Pascal Ruffieux,
Roman Fasel,
Ernst Meyer
Abstract:
The state of vanishing friction known as superlubricity has important applications for energy saving and increasing the lifetime of devices. Superlubricity detected with atomic force microscopy appears in examples like sliding large graphite flakes or gold nanoclusters across surfaces. However, the origin of the behavior is poorly understood due to the lack of a controllable nano-contact. We demon…
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The state of vanishing friction known as superlubricity has important applications for energy saving and increasing the lifetime of devices. Superlubricity detected with atomic force microscopy appears in examples like sliding large graphite flakes or gold nanoclusters across surfaces. However, the origin of the behavior is poorly understood due to the lack of a controllable nano-contact. We demonstrate graphene nanoribbons superlubricity when sliding on gold with a joint experimental and computational approach. The atomically well-defined contact allows us to trace the origin of superlubricity, unravelling the role played by edges, surface reconstruction and ribbon elasticity. Our results pave the way to the scale-up of superlubricity toward the realization of frictionless coatings.
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Submitted 13 March, 2016;
originally announced March 2016.
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Dirac loops in trigonally connected 3D lattices
Authors:
Kieran Mullen,
Bruno Uchoa,
Bin Wang,
Daniel Glatzhofer
Abstract:
We consider different generalizations of the honeycomb lattice to three dimensional structures. We address the family of the hyper-honeycomb lattice, which is made up of alternating layers of 2D honeycomb nano-ribbons, with each layer rotated by $π/2$ with the layer below. When the orbitals of the lattice sites are symmetric with respect to the planes of the trigonal links, these structures can pr…
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We consider different generalizations of the honeycomb lattice to three dimensional structures. We address the family of the hyper-honeycomb lattice, which is made up of alternating layers of 2D honeycomb nano-ribbons, with each layer rotated by $π/2$ with the layer below. When the orbitals of the lattice sites are symmetric with respect to the planes of the trigonal links, these structures can produce a Dirac loop, a closed line of Dirac nodes in momentum space. For orbitals that break that symmetry, such as the carbon $p$-wave orbitals, hyper-honeycomb lattices do not possess the loop structure. We also consider a new structure, the screw hyper-honeycomb, in which the successive layers of parallel units are rotated by $2π/3$. This structure has a Dirac loop if reflection symmetry in the unit cell is imposed, regardless the symmetry of the onsite orbitals. We discuss the implementation of those systems in optical lattices.
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Submitted 5 August, 2016; v1 submitted 4 March, 2016;
originally announced March 2016.
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On-surface synthesis of graphene nanoribbons with zigzag edge topology
Authors:
Pascal Ruffieux,
Shiyong Wang,
Bo Yang,
Carlos Sanchez,
Jia Liu,
Thomas Dienel,
Leopold Talirz,
Prashant Shinde,
Carlo A. Pignedoli,
Daniele Passerone,
Tim Dumslaff,
Xinliang Feng,
Klaus Muellen,
Roman Fasel
Abstract:
Graphene-based nanostructures exhibit a vast range of exciting electronic properties that are absent in extended graphene. For example, quantum confinement in carbon nanotubes and armchair graphene nanoribbons (AGNRs) leads to the opening of substantial electronic band gaps that are directly linked to their structural boundary conditions. Even more intriguing are nanostructures with zigzag edges,…
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Graphene-based nanostructures exhibit a vast range of exciting electronic properties that are absent in extended graphene. For example, quantum confinement in carbon nanotubes and armchair graphene nanoribbons (AGNRs) leads to the opening of substantial electronic band gaps that are directly linked to their structural boundary conditions. Even more intriguing are nanostructures with zigzag edges, which are expected to host spin-polarized electronic edge states and can thus serve as key elements for graphene-based spintronics. The most prominent example is zigzag graphene nanoribbons (ZGNRs) for which the edge states are predicted to couple ferromagnetically along the edge and antiferromagnetically between them. So far, a direct observation of the spin-polarized edge states for specifically designed and controlled zigzag edge topologies has not been achieved. This is mainly due to the limited precision of current top-down approaches, which results in poorly defined edge structures. Bottom-up fabrication approaches, on the other hand, were so far only successfully applied to the growth of AGNRs and related structures. Here, we describe the successful bottom-up synthesis of ZGNRs, which are fabricated by the surface-assisted colligation and cyclodehydrogenation of specifically designed precursor monomers including carbon groups that yield atomically precise zigzag edges. Using scanning tunnelling spectroscopy we prove the existence of edge-localized states with large energy splittings. We expect that the availability of ZGNRs will finally allow the characterization of their predicted spin-related properties such as spin confinement and filtering, and ultimately add the spin degree of freedom to graphene-based circuitry.
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Submitted 16 November, 2015;
originally announced November 2015.
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Giant edge state splitting at atomically precise zigzag edges
Authors:
Shiyong Wang,
Leopold Talirz,
Carlo A. Pignedoli,
Xinliang Feng,
Klaus Muellen,
Roman Fasel,
Pascal Ruffieux
Abstract:
Zigzag edges of graphene nanostructures host localized electronic states that are predicted to be spin-polarized. However, these edge states are highly susceptible to edge roughness and interaction with a supporting substrate, complicating the study of their intrinsic electronic and magnetic structure. Here, we focus on atomically precise graphene nanoribbons whose two short zigzag edges host exac…
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Zigzag edges of graphene nanostructures host localized electronic states that are predicted to be spin-polarized. However, these edge states are highly susceptible to edge roughness and interaction with a supporting substrate, complicating the study of their intrinsic electronic and magnetic structure. Here, we focus on atomically precise graphene nanoribbons whose two short zigzag edges host exactly one localized electron each. Using the tip of a scanning tunneling microscope, the graphene nanoribbons are transferred from the metallic growth substrate onto insulating islands of NaCl in order to decouple their electronic structure from the metal. The absence of charge transfer and hybridization with the substrate is confirmed by scanning tunneling spectroscopy (STS), which reveals a pair of occupied / unoccupied edge states. Their large energy splitting of 1.9 eV is in accordance with ab initio many-body perturbation theory calculations and reflects the dominant role of electron-electron interactions in these localized states.
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Submitted 16 November, 2015;
originally announced November 2015.
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Time-evolution of the GaAs(0 0 1) pre-roughening process
Authors:
Z. Ding,
D. W. Bullock,
P. M. Thibado,
V. P. LaBella,
K. Mullen
Abstract:
The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported.
The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported.
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Submitted 12 March, 2015;
originally announced March 2015.
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Electronic Band Dispersion of Graphene Nanoribbons via Fourier-Transformed Scanning Tunneling Spectroscopy
Authors:
Hajo Söde,
Leopold Talirz,
Oliver Gröning,
Carlo Antonio Pignedoli,
Reinhard Berger,
Xinliang Feng,
Klaus Müllen,
Roman Fasel,
Pascal Ruffieux
Abstract:
Atomically precise armchair graphene nanoribbons of width $N=7$ (7-AGNRs) are investigated by scanning tunneling spectroscopy (STS) on Au(111). The analysis of energy-dependent standing wave patterns of finite length ribbons allows, by Fourier transformation, the direct extraction of the dispersion relation of frontier electronic states. Aided by density functional theory calculations, we assign t…
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Atomically precise armchair graphene nanoribbons of width $N=7$ (7-AGNRs) are investigated by scanning tunneling spectroscopy (STS) on Au(111). The analysis of energy-dependent standing wave patterns of finite length ribbons allows, by Fourier transformation, the direct extraction of the dispersion relation of frontier electronic states. Aided by density functional theory calculations, we assign the states to the valence band, the conduction band and the next empty band of 7-AGNRs, determine effective masses of $0.42\pm 0.08\,m_e$, $0.40\pm 0.18\,m_e$ and $0.20\pm 0.03\,m_e$, respectively, and a band gap of $2.37\pm 0.06$ eV.
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Submitted 5 December, 2014;
originally announced December 2014.
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Comparing charge transfer tuning effects by chemical substitution and uniaxial pressure in the organic charge transfer complex tetramethoxypyrene-tetracyanoquinodimethane
Authors:
Milan Rudloff,
Kai Ackermann,
Michael Huth,
Harald O. Jeschke,
Milan Tomic,
Roser Valenti,
Benedikt Wolfram,
Martin Bröring,
Michael Bolte,
Dennis Chercka,
Martin Baumgarten,
Klaus Müllen
Abstract:
In the search for novel organic charge transfer salts with variable charge transfer degree we study the effects of two modifications to the recently synthesized donor-acceptor Tetramethoxypyrene (TMP)-Tetracyanoquinodimethane (TCNQ). One is of chemical nature by substituting the acceptor TCNQ molecules by F4TCNQ molecules. The second consists in simulating the application of uniaxial pressure alon…
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In the search for novel organic charge transfer salts with variable charge transfer degree we study the effects of two modifications to the recently synthesized donor-acceptor Tetramethoxypyrene (TMP)-Tetracyanoquinodimethane (TCNQ). One is of chemical nature by substituting the acceptor TCNQ molecules by F4TCNQ molecules. The second consists in simulating the application of uniaxial pressure along the stacking axis of the system. In order to test the chemical substitution, we have grown single crystals of TMP-F4TCNQ and analyzed its electronic structure via electronic transport measurements, ab initio density functional theory (DFT) calculations and UV/VIS/IR absorption spectroscopy. This system shows an almost ideal geometrical overlap of nearly planar molecules alternately stacked (mixed stack) and this arrangement is echoed by a semiconductor-like transport behavior with an increased conductivity along the stacking direction. This is in contrast to TMP-TCNQ which shows a less pronounced anisotropy and a smaller conductivity response. Our bandstructure calculations confirm the one-dimensional behavior of TMP-F4TCNQ with pro- nounced dispersion only along the stacking axis. Infrared measurements illustrating the CN vibration frequency shift in F4TCNQ suggest however no improvement on the degree of charge transfer in TMP-F4TCNQ with respect to TMP-TCNQ. In both complexes about 0.1 is transferred from TMP to the acceptor. Concerning the pressure effect, our DFT calculations on designed TMP-TCNQ and TMP-F4TCNQ structures under different pressure conditions show that application of uniaxial pressure along the stacking axis of TMP-TCNQ may be the route to follow in order to obtain a much more pronounced charge transfer.
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Submitted 21 October, 2014;
originally announced October 2014.
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Line of Dirac Nodes in Hyper-Honeycomb Lattices
Authors:
Kieran Mullen,
Bruno Uchoa,
Daniel T. Glatzhofer
Abstract:
We propose a family of free fermion lattice models that have "Dirac loops", closed lines of Dirac nodes in momentum space, on which the density of states vanishes linearly with energy. Those lattices all possess the planar trigonal connectivity present in graphene, but are three dimensional. We show that their highly anisotropic and multiply-connected Fermi surface leads to quantized Hall conducti…
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We propose a family of free fermion lattice models that have "Dirac loops", closed lines of Dirac nodes in momentum space, on which the density of states vanishes linearly with energy. Those lattices all possess the planar trigonal connectivity present in graphene, but are three dimensional. We show that their highly anisotropic and multiply-connected Fermi surface leads to quantized Hall conductivities in three dimensions for magnetic fields with toroidal geometry. In the presence of spin-orbit coupling, we show that those structures have topological surface states. We discuss the feasibility of realizing the structures as new allotropes of carbon.
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Submitted 9 July, 2015; v1 submitted 23 August, 2014;
originally announced August 2014.
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Turbostratic graphitic microstructures: electronically decoupled multilayer graphene devices with robust high charge carrier mobility
Authors:
Yenny R. Hernandez,
Sebastian Schweitzer,
June-Seo Kim,
Ajit Kumar Patra,
Jan Englert,
Ingo Lieberwirth,
Andrea Liscio,
Vincenzo Palermo,
Xinliang Feng,
Andreas Hirsch,
Mathias Kläui,
Klaus Müllen
Abstract:
Carbon nanomaterials continue to amaze scientists due to their exceptional physical properties. Recently there have been theoretical predictions and first reports on graphene multilayers, where, due to the rotation of the stacked layers, outstanding electronic properties are retained while the susceptibility to degradation and mechanical stress is strongly reduced due to the multilayer nature. Her…
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Carbon nanomaterials continue to amaze scientists due to their exceptional physical properties. Recently there have been theoretical predictions and first reports on graphene multilayers, where, due to the rotation of the stacked layers, outstanding electronic properties are retained while the susceptibility to degradation and mechanical stress is strongly reduced due to the multilayer nature. Here we show that fully turbostratic multilayer graphitic microstructures combine the high charge carrier mobilities necessary for advanced electronic and spintronic devices with the robustness of graphitic structures. Structural characterization of disk-shaped graphitic microstructures using Raman spectroscopy and Transmission Electron Microscopy (TEM) reveals Moiré and diffraction patterns corroborating their turbostratic nature. Electronic transport characterization yields reproducible high mobilities > 105 cm^2(Vs)^(-1) independent of the disks thickness, which is a direct consequence of the electronic decoupling induced by the turbostratic stacking.
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Submitted 25 January, 2013;
originally announced January 2013.
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R-matrix theory for nanoscale phonon thermal transport across devices and interfaces
Authors:
K. G. S. H. Gunawardana,
Kieran Mullen
Abstract:
We have adapted R-matrix theory to calculate phonon scattering across systems of molecular to mesoscopic scale. The key novelty of this work is that the only required information about the scattering region are its normal modes, which are evaluated only once for a system. Thus, R-matrix theory is a computationally efficient and simple approach to calculate phonon scattering in larger systems. To v…
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We have adapted R-matrix theory to calculate phonon scattering across systems of molecular to mesoscopic scale. The key novelty of this work is that the only required information about the scattering region are its normal modes, which are evaluated only once for a system. Thus, R-matrix theory is a computationally efficient and simple approach to calculate phonon scattering in larger systems. To validate and to demonstrate the applicability of the theory, we apply it to two systems: a one dimensional chain of atoms and a graphene nanoribbon. In both cases, we discuss the effect of mass impurities on thermal transport.
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Submitted 18 September, 2011;
originally announced September 2011.
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First-principles modeling of the polycyclic aromatic hydrocarbons reduction
Authors:
D. W. Boukhvalov,
X. Feng,
K. Müllen
Abstract:
Density functional theory modelling of the reduction of realistic nanographene molecules (C42H18, C48H18 and C60H24) by molecular hydrogen evidences for the presence of limits in the hydrogenation process. These limits caused the contentions between three-fold symmetry of polycyclic aromatic hydrocarbon molecules and two-fold symmetry of adsorbed hydrogen pairs. Increase of the binding energy betw…
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Density functional theory modelling of the reduction of realistic nanographene molecules (C42H18, C48H18 and C60H24) by molecular hydrogen evidences for the presence of limits in the hydrogenation process. These limits caused the contentions between three-fold symmetry of polycyclic aromatic hydrocarbon molecules and two-fold symmetry of adsorbed hydrogen pairs. Increase of the binding energy between nanographenes during reduction is also discussed as possible cause of the experimentally observed limited hydrogenation of studied nanographenes.
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Submitted 9 July, 2011;
originally announced July 2011.
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Theoretical Comparison of Rashba Spin-Orbit Coupling in Digitally, Discretely, and Continuously Alloyed Nanostructures
Authors:
Joseph Pingenot,
Kieran Mullen
Abstract:
Although most theoretical calculations of quantum wells with non-square profiles assume that material composition is varied continuously, it is more common in experiment to grow digital alloys. We compare the Rashba spin-orbit interaction of triangular wells using continuous, discrete, and digital alloying profiles in (001)-grown triangular InSb/Al_f(z)In_(1-f(z))Sb, finding a very large differenc…
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Although most theoretical calculations of quantum wells with non-square profiles assume that material composition is varied continuously, it is more common in experiment to grow digital alloys. We compare the Rashba spin-orbit interaction of triangular wells using continuous, discrete, and digital alloying profiles in (001)-grown triangular InSb/Al_f(z)In_(1-f(z))Sb, finding a very large difference between digital alloying and the others, including a sign change in the Rashba spin-orbit coupling. We find that the interface contribution to the Rashba spin-orbit coupling is much larger in the continuously- and discretely-alloyed triangular quantum wells than in the digitally-alloyed triangular wells, in which it is almost completely absent. The electric field contribution, however, is quite similar in all three systems. Due to a much stronger doping dependence in all three systems, the electric field contribution dominates at higher dopings, although the very large offset due to the near absence of interface contribution in digitally-alloyed wells persists.
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Submitted 9 May, 2011;
originally announced May 2011.
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Quantum coherent negative bend resistance in InSb mesoscopic structures
Authors:
N. Goel,
T. Jayasekera,
K. Mullen,
M. B. Santos,
K. Suzuki,
S. Miyashita,
Y. Hirayama
Abstract:
Transport measurements were made on four-terminal devices fabricated from InSb/Al_xIn_(1-x)Sb quantum well structures at temperatures from 1.5 to 300K. Negative bend resistance, which is characteristic of ballistic transport, was observed in devices of channel widths 0.2 or 0.5 μm. We have improved upon the existing implementations of R-matrix theory in device physics by introducing boundary condi…
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Transport measurements were made on four-terminal devices fabricated from InSb/Al_xIn_(1-x)Sb quantum well structures at temperatures from 1.5 to 300K. Negative bend resistance, which is characteristic of ballistic transport, was observed in devices of channel widths 0.2 or 0.5 μm. We have improved upon the existing implementations of R-matrix theory in device physics by introducing boundary conditions that dramatically speed convergence. By comparison with R-matrix calculations, we show that the experimental observations are consistent with quantum coherent transport.
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Submitted 11 March, 2011;
originally announced March 2011.
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Polarization transitions in Quantum Dot Quantum Well Arrays
Authors:
Ethan Brown,
Kieran Mullen
Abstract:
With the improvement in fabrication techniques it is now possible to produce atom-like semiconductor structures with unique electronic properties. This makes possible periodic arrays of nano-structures in which the Coulomb interaction, polarizability, and tunneling may all be varied. We study the collective properties of 2D arrays and 3D face centered cubic lattices of singly-charged nano-spherica…
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With the improvement in fabrication techniques it is now possible to produce atom-like semiconductor structures with unique electronic properties. This makes possible periodic arrays of nano-structures in which the Coulomb interaction, polarizability, and tunneling may all be varied. We study the collective properties of 2D arrays and 3D face centered cubic lattices of singly-charged nano-spherical shells, sometimes called `quantum-dot quantum wells' or `core-shell quantum dots.' We find that for square arrays, the classical groundstate is an Ising anti-ferroelectret (AFE), while the quantum groundstate undergoes a transition from a uniform state to an AFE. The triangular lattice, in contrast, displays properties characteristic of frustration. Three dimensional face-centered cubic lattices polarize in planes, with each layer alternating in direction. We discuss the possible experimental signals of these transitions.
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Submitted 11 January, 2011;
originally announced January 2011.
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Orbital-Resolved Partial Charge Transfer from the Methoxy Groups of Substituted Pyrenes in Complexes with Tetracyanoquinodimethane - a NEXAFS Study
Authors:
K. Medjanik,
S. A. Nepijko,
H. J. Elmers,
G. Schönhense,
P. Nagel,
M. Merz,
S. Schuppler,
D. Chercka,
M. Baumgarten,
K. Müllen
Abstract:
It is demonstrated that the near-edge X-ray absorption fine structure (NEXAFS) provides a powerful local probe of functional groups in novel charge transfer (CT) compounds. Microcrystals of tetra- and hexamethoxypyrene as donors with the strong acceptor tetracyanoquinodimethane (TMPx/HMPx - TCNQy) were grown from solution via vapour diffusion in different stoichiometries x:y = 1:1, 1:2 and 2:1. Ow…
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It is demonstrated that the near-edge X-ray absorption fine structure (NEXAFS) provides a powerful local probe of functional groups in novel charge transfer (CT) compounds. Microcrystals of tetra- and hexamethoxypyrene as donors with the strong acceptor tetracyanoquinodimethane (TMPx/HMPx - TCNQy) were grown from solution via vapour diffusion in different stoichiometries x:y = 1:1, 1:2 and 2:1. Owing to the element specificity of NEXAFS, the oxygen and nitrogen K-edge spectra are direct spectroscopic fingerprints of the donating and accepting moieties. The orbital selectivity of the NEXAFS resonances allows to precisely elucidate the participation of specific orbitals in the charge-transfer process. In the present case charge is transferred from methoxy-orbitals 2e (PI*) and 6a1 (SIGMA*) to the cyano-orbitals b3g and au (PI*) and - to a weaker extent - to b1g and b2u (SIGMA*). The occupation of 2e reflects the anionic character of the methoxy groups. Surprisingly, the charge transfer increases with increasing HMP content of the complex. As additional indirect signature, all spectral features of the donor and acceptor are shifted to higher and lower photon energies, respectively. Providing quantitative access to the relative occupation of specific orbitals, the approach constitutes the most direct probe of the charge-transfer mechanism in organic salts found so far. Although demonstrated for the specific example of pyrene-derived donors with the classical acceptor TCNQ, the method is very versatile and can serve as routine probe for novel CT-complexes on the basis of functionalized polycyclic aromatic hydrocarbons.
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Submitted 15 December, 2010;
originally announced December 2010.
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Tunable Thermal Transport and Thermal Rectification in Strained Graphene Nanoribbons
Authors:
K. G. S. H. Gunawardana,
Kieran Mullen,
Jiuning Hu,
Yong P. Chen,
Xiulin Ruan
Abstract:
Using molecular dynamics(MD) simulations, we study thermal transport in graphene nanoribbons (GNR) subjected to uniform uniaxial and nonuniform strain fields. We predict significant thermal rectification (over 70%) in a rectangular armchair GNR by applying a transverse force asymmetrically. The heat flux is larger from the less stressed region to the more stressed region. Furthermore, we develop a…
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Using molecular dynamics(MD) simulations, we study thermal transport in graphene nanoribbons (GNR) subjected to uniform uniaxial and nonuniform strain fields. We predict significant thermal rectification (over 70%) in a rectangular armchair GNR by applying a transverse force asymmetrically. The heat flux is larger from the less stressed region to the more stressed region. Furthermore, we develop a theoretical framework based on the non-equilibrium thermodynamics to discuss when thermal rectification under a stress gradient can occur. We conclude with a discussion of details relevant to experiment.
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Submitted 22 May, 2012; v1 submitted 12 November, 2010;
originally announced November 2010.
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A new charge-transfer complex in UHV co-deposited tetramethoxypyrene and tetracyanoquinodimethane
Authors:
K. Medjanik,
S. Perkert,
S. Naghavi,
M. Rudloff,
V. Solovyeva,
D. Chercka,
M. Huth,
S. A. Nepijko,
T. Methfessel,
C. Felser,
M. Baumgarten,
K. Müllen,
H. J. Elmers,
G. Schönhense
Abstract:
UHV-deposited films of the mixed phase of tetramethoxypyrene and tetracyanoquinodimethane (TMP1-TCNQ1) on gold have been studied using ultraviolet photoelectron spectroscopy (UPS), X-ray-diffraction (XRD), infrared (IR) spectroscopy and scanning tunnelling spectroscopy (STS). The formation of an intermolecular charge-transfer (CT) compound is evident from the appearance of new reflexes in XRD (d1=…
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UHV-deposited films of the mixed phase of tetramethoxypyrene and tetracyanoquinodimethane (TMP1-TCNQ1) on gold have been studied using ultraviolet photoelectron spectroscopy (UPS), X-ray-diffraction (XRD), infrared (IR) spectroscopy and scanning tunnelling spectroscopy (STS). The formation of an intermolecular charge-transfer (CT) compound is evident from the appearance of new reflexes in XRD (d1= 0.894 nm, d2= 0.677 nm). A softening of the CN stretching vibration (red-shift by 7 cm-1) of TCNQ is visible in the IR spectra, being indicative of a CT of the order of 0.3e from TMP to TCNQ in the complex. Characteristic shifts of the electronic level positions occur in UPS and STS that are in reasonable agreement with the prediction of from DFT calculations (Gaussian03 with hybrid functional B3LYP). STS reveals a HOMO-LUMO gap of the CT complex of about 1.25 eV being much smaller than the gaps (>3.0 eV) of the pure moieties. The electron-injection and hole-injection barriers are 0.3 eV and 0.5 eV, respectively. Systematic differences in the positions of the HOMOs determined by UPS and STS are discussed in terms of the different information content of the two methods.
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Submitted 27 August, 2010;
originally announced August 2010.
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Efficient Random Walk Algorithm for Simulating Thermal Transport in Composites With High Conductivity Contrast
Authors:
K. G. S. H. Gunawardana,
Kieran Mullen,
Dimitrios V. Papavassiliou
Abstract:
In dealing with thermal transport in composite systems, high contrast materials pose a special problem for numerical simulation: the time scale or step size in the high conductivity material must be much smaller than in the low conductivity material. In the limit that the higher conductivity inclusion can be treated as having an infinite conductivity, we show how a standard random walk algorithm c…
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In dealing with thermal transport in composite systems, high contrast materials pose a special problem for numerical simulation: the time scale or step size in the high conductivity material must be much smaller than in the low conductivity material. In the limit that the higher conductivity inclusion can be treated as having an infinite conductivity, we show how a standard random walk algorithm can be alterred to improve speed while still preserving the second law of thermodynamics. We demonstrate the principle in a 1D system, and then apply it to 3D composites with spherical inclusions.
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Submitted 12 November, 2010; v1 submitted 19 October, 2009;
originally announced October 2009.