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Effect of different buffer layers on the quality of InGaN layers grown on Si
Authors:
V. J. Gómez,
J. Grandal,
A. Núñez-Cascajero,
F. B. Naranjo,
M. Varela,
M. A. Sánchez-García,
E. Calleja
Abstract:
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet e…
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This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.
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Submitted 29 August, 2019;
originally announced August 2019.
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Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering
Authors:
S. Valdueza-Felip,
A. Núñez-Cascajero,
R. Blasco,
D. Montero,
L. Grenet,
M. de la Mata,
S. Fernández,
L. Rodríguez-De Marcos,
S. I. Molina,
J. Olea,
F. B. Naranjo
Abstract:
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm thick amorphous layer at the interface mitigates the response in devices fabricated by direct deposition of n-AlInN on p-Si(111). Adding a 4-nm-thick…
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We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm thick amorphous layer at the interface mitigates the response in devices fabricated by direct deposition of n-AlInN on p-Si(111). Adding a 4-nm-thick AlN buffer layer improves the AlInN crystalline quality and the interface alignment leading to devices with a conversion efficiency of 1.5% under 1-sun AM1.5G illumination. For thicker buffers the performance lessens due to inefficient tunnel transport through the AlN. These results demonstrate the feasibility of using In-rich AlInN alloys deposited by radio frequency sputtering as novel electron-selective contacts to Si-heterojunction solar cells.
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Submitted 3 August, 2018;
originally announced August 2018.
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High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics
Authors:
S. Valdueza-Felip,
E. Bellet-Amalric,
A. Núñez-Cascajero,
Y. Wang,
M. -P. Chauvat,
P. Ruterana,
S. Pouget,
K. Lorenz,
E. Alves,
E. Monroy
Abstract:
We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and morphological quality is obtained under In excess conditions, at In accumulation limit, and at a growth temperature where InGaN decomposition is active. Under such cond…
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We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and morphological quality is obtained under In excess conditions, at In accumulation limit, and at a growth temperature where InGaN decomposition is active. Under such conditions, in situ and ex situ analysis of the evolution of the crystalline structure with the growth thickness points to an onset of misfit relaxation after the growth of 40 nm, and a gradual relaxation during more than 200 nm which results in an inhomogeneous strain distribution along the growth axis. This process is associated with a compositional pulling effect, i.e. indium incorporation is partially inhibited in presence of compressive strain, resulting in a compositional gradient with increasing In mole fraction towards the surface.
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Submitted 6 January, 2015; v1 submitted 21 October, 2014;
originally announced October 2014.
