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Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress
Authors:
Natasha Tomm,
Alexander R. Korsch,
Alisa Javadi,
Daniel Najer,
Rüdiger Schott,
Sascha R. Valentin,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distrib…
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A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating an n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode-splitting as a function of wavelength across the stopband. We demonstrate a reversible in-situ technique to tune the mode-splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of $\sim$11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode-splitting and its tuning across the stop-band leads to a quantitative understanding of the mechanism behind the results.
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Submitted 18 February, 2021;
originally announced February 2021.
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Suppression of surface-related loss in a gated semiconductor microcavity
Authors:
Daniel Najer,
Natasha Tomm,
Alisa Javadi,
Alexander R. Korsch,
Benjamin Petrak,
Daniel Riedel,
Vincent Dolique,
Sascha R. Valentin,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer…
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We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer of quantum dots in the intrinsic region. Free-carrier absorption in the highly doped n- and p-layers is minimized by positioning them close to a node of the vacuum electromagnetic-field. The surface, however, resides at an anti-node of the vacuum field and results in significant loss. These losses are much reduced by surface passivation. The strong dependence on wavelength implies that the main effect of the surface passivation is to eliminate the surface electric field, thereby quenching below-bandgap absorption via a Franz-Keldysh-like effect. An additional benefit is that the surface passivation reduces scattering at the GaAs surface. These results are important in other nano-photonic devices which rely on a GaAs-vacuum interface to confine the electromagnetic field.
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Submitted 17 February, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Wafer-Scale Epitaxial Modulation of Quantum Dot Density
Authors:
N. Bart,
C. Dangel,
P. Zajac,
N. Spitzer,
J. Ritzmann,
M. Schmidt,
H. G. Babin,
R. Schott,
S. R. Valentin,
S. Scholz,
Y. Wang,
R. Uppu,
D. Najer,
M. C. Löbl,
N. Tomm,
A. Javadi,
N. O. Antoniadis,
L. Midolo,
K. Müller,
R. J. Warburton,
P. Lodahl,
A. D. Wieck,
J. J. Finley,
A. Ludwig
Abstract:
Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be u…
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Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/$μm^{2}$ and periods ranging from several millimeters down to at least a few hundred microns. This novel method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.
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Submitted 9 December, 2021; v1 submitted 20 November, 2020;
originally announced November 2020.
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Fabrication of mirror templates in silica with micron-sized radii of curvature
Authors:
Daniel Najer,
Martina Renggli,
Daniel Riedel,
Sebastian Starosielec,
Richard J. Warburton
Abstract:
We present the fabrication of exceptionally small-radius concave microoptics on fused silica substrates using CO2 laser ablation and subsequent reactive ion etching. The protocol yields on-axis near-Gaussian depressions with radius of curvature $\lesssim5$ microns at shallow depth and low surface roughness of 2 angstroms. This geometry is appealing for cavity quantum electrodynamics where small mo…
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We present the fabrication of exceptionally small-radius concave microoptics on fused silica substrates using CO2 laser ablation and subsequent reactive ion etching. The protocol yields on-axis near-Gaussian depressions with radius of curvature $\lesssim5$ microns at shallow depth and low surface roughness of 2 angstroms. This geometry is appealing for cavity quantum electrodynamics where small mode volumes and low scattering losses are desired. We study the optical performance of the structure within a tunable Fabry-Perot type microcavity, demonstrate near-coating-limited loss rates (F = 25,000) and small focal lengths consistent with their geometrical dimensions.
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Submitted 10 December, 2016; v1 submitted 16 August, 2016;
originally announced August 2016.
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Epitaxial lift-off for solid-state cavity quantum electrodynamics
Authors:
Lukas Greuter,
Daniel Najer,
Andreas V. Kuhlmann,
Sascha Valentin,
Arne Ludwig,
Andreas D. Wieck,
Sebastian Starosielec,
Richard J. Warburton
Abstract:
We present a new approach to incorporate self-assembled quantum dots into a Fabry-Pérot-like microcavity. Thereby a 3$λ$/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4,100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the sem…
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We present a new approach to incorporate self-assembled quantum dots into a Fabry-Pérot-like microcavity. Thereby a 3$λ$/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4,100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor - mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggests that we are close to the strong coupling regime.
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Submitted 4 May, 2015;
originally announced May 2015.
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A small mode volume tunable microcavity: development and characterization
Authors:
Lukas Greuter,
Sebastian Starosielec,
Daniel Najer,
Arne Ludwig,
Luc Duempelmann,
Dominik Rohner,
Richard J. Warburton
Abstract:
We report the realization of a spatial and spectrally tunable air-gap Fabry-Perot type microcavity of high finesse and cubic-wavelength-scale mode volume. These properties are attractive in the fields of opto-mechanics, quantum sensing and foremost cavity quantum electrodymanics. The major design feature is a miniaturized concave mirror with atomically smooth surface and radius of curvature as low…
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We report the realization of a spatial and spectrally tunable air-gap Fabry-Perot type microcavity of high finesse and cubic-wavelength-scale mode volume. These properties are attractive in the fields of opto-mechanics, quantum sensing and foremost cavity quantum electrodymanics. The major design feature is a miniaturized concave mirror with atomically smooth surface and radius of curvature as low as 10 micrometer produced by CO2 laser ablation of fused silica. We demonstrate excellent mode-matching of a focussed laser beam to the microcavity mode and confirm from the frequencies of the resonator modes that the effective optical radius matches the physical radius. With these small radii, we demonstrate sub-wavelength beam waists. We also show that the microcavity is sufficiently rigid for practical applications: in a cryostat at 4K, the root-mean-square microcavity length fluctuations are below 5 pm.
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Submitted 6 August, 2014;
originally announced August 2014.
