Showing 1–21 of 21 results for author: Newell, D B

Constructing 100 MΩおめが and 1 GΩおめが Resistance Standards via Star-Mesh Transformations

Authors: Dean G. Jarrett, Albert F. Rigosi, Dominick S. Scaletta, Ngoc Thanh Mai Tran, Heather M. Hill, Alireza R. Panna, Cheng Hsueh Yang, Yanfei Yang, Randolph E. Elmquist, David B. Newell

Abstract: A recent mathematical framework for optimizing resistor networks to achieve values in the MΩおめが through GΩおめが levels was employed for two specific cases. Objectives here include proof of concept and identification of possible apparatus limitations for future experiments involving graphene-based quantum Hall array resistance standards. Using fractal-like, or recursive, features of the framework allows on… ▽ More A recent mathematical framework for optimizing resistor networks to achieve values in the MΩおめが through GΩおめが levels was employed for two specific cases. Objectives here include proof of concept and identification of possible apparatus limitations for future experiments involving graphene-based quantum Hall array resistance standards. Using fractal-like, or recursive, features of the framework allows one to calculate and implement network designs with substantially lower-valued resistors. The cases of 100 MΩおめが and 1 GΩおめが demonstrate that, theoretically, one would not need more than 100 quantum Hall elements to achieve these high resistances. △ Less

Submitted 2 February, 2024; originally announced February 2024.

Fractal-like star-mesh transformations using graphene quantum Hall arrays

Authors: Dominick S. Scaletta, Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Cheng-Hsueh Yang, Heather M. Hill, Yanfei Yang, Linli Meng, Alireza R. Panna, Shamith U. Payagala, Randolph E. Elmquist, Dean G. Jarrett, David B. Newell, Albert F. Rigosi

Abstract: A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 EΩおめが, arguably the highest resis… ▽ More A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 EΩおめが, arguably the highest resistance with meaningful applicability) while still being feasible to build with modern fabrication techniques. Epitaxial graphene elements are tested, whose quantized Hall resistance at the nu=2 plateau (R_H = 12906.4 Ωおーむ) becomes the building block for larger effective, quantized resistances. It is demonstrated that, mathematically, one would not need more than 200 elements to achieve the highest pertinent resistances △ Less

Submitted 27 September, 2023; originally announced September 2023.

Realization of the quantum ampere using the quantum anomalous Hall and Josephson effects

Authors: Linsey K. Rodenbach, Ngoc Thanh Mai Tran, Jason M. Underwood, Alireza R. Panna, Molly P. Andersen, Zachary S. Barcikowski, Shamith U. Payagala, Peng Zhang, Lixuan Tai, Kang L. Wang, Randolph E. Elmquist, Dean G. Jarrett, David B. Newell, Albert F. Rigosi, David Goldhaber-Gordon

Abstract: By directly coupling a quantum anomalous Hall resistor to a programmable Josephson voltage standard, we have implemented a quantum current sensor (QCS) that operates within a single cryostat in zero magnetic field. Using this QCS we determine values of current within the range 9.33 nA - 252 nA, providing a realization of the ampere based on fundamental constants and quantum phenomena. The relative… ▽ More By directly coupling a quantum anomalous Hall resistor to a programmable Josephson voltage standard, we have implemented a quantum current sensor (QCS) that operates within a single cryostat in zero magnetic field. Using this QCS we determine values of current within the range 9.33 nA - 252 nA, providing a realization of the ampere based on fundamental constants and quantum phenomena. The relative Type A uncertainty is lowest, 2.30 $\times$10$^{-6}$ A/A, at the highest current studied, 252 nA. The total root-sum-square combined relative uncertainty ranges from 3.91 $\times$10$^{-6}$ A/A at 252 nA to 41.2 $\times$10$^{-6}$ A/A at 9.33 nA. No DC current standard is available in the nanoampere range with relative uncertainty comparable to this, so we assess our QCS accuracy by comparison to a traditional Ohm's law measurement of the same current source. We find closest agreement (1.46 $\pm$ 4.28)$\times$10$^{-6}$ A/A for currents near 83.9 nA, for which the highest number of measurements were made. △ Less

Submitted 31 July, 2023; originally announced August 2023.

Comments: 12 pages, 5 figures, 15 pages of supplemental information

Star-Mesh Quantized Hall Array Resistance Devices

Authors: Dean G. Jarrett, Ching-Chen Yeh, Shamith U. Payagala, Alireza R. Panna, Yanfei Yang, Linli Meng, Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Dipanjan Saha, Randolph E. Elmquist, David B. Newell, Albert F. Rigosi

Abstract: Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible realization of the ohm. By optimizing the scale of the growth, it has become possible to fabricate quantized Hall array resistance standards (QHARS) with nomina… ▽ More Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible realization of the ohm. By optimizing the scale of the growth, it has become possible to fabricate quantized Hall array resistance standards (QHARS) with nominal values between 1 kΩおめが and 1.29 MΩおめが. One of these QHARS device designs accommodates a value of about 1.01 MΩおめが, which made it an ideal candidate to pursue a proof-of-concept that graphene-based QHARS devices are suitable for forming wye-delta resistance networks. In this work, the 1.01 MΩおめが array output nearly 20.6 MΩおめが due to the wye-delta transformation, which itself is a special case of star-mesh transformations. These mathematical equivalence principles allow one to extend the QHR to the 100 MΩおめが and 10 GΩおめが resistance levels with fewer array elements than would be necessary for a single array with many more elements in series. The 1.01 MΩおめが device shows promise that the wye-delta transformation can shorten the calibration chain, and, more importantly, provide a chain with a more direct line to the quantum SI. △ Less

Submitted 21 April, 2023; originally announced April 2023.

Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs

Authors: Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Ching-Chen Yeh, Dipanjan Saha, David B. Newell, Angela R. Hight Walker, Chi-Te Liang, Randolph E. Elmquist, Albert F. Rigosi

Abstract: In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $νにゅー$ = 2 Landau level. With the demonstrations herein of… ▽ More In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $νにゅー$ = 2 Landau level. With the demonstrations herein of devices having multiple outputs of quantized values available simultaneously, these versatile devices can be used to disseminate the ohm globally. Such devices are designed to give access to quantized resistance values over the range of three orders of magnitude, starting as low as the standard value of approximately 12.9 k$Ωおめが$ and reaching as high as 1.29 M$Ωおめが$. Several experimental methods are used to assess the quality and versatility of the devices, including standard lock-in techniques and Raman spectroscopy. △ Less

Submitted 10 June, 2022; originally announced June 2022.

Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards

Authors: Albert F. Rigosi Linsey K. Rodenbach, Alireza R. Panna, Shamith U. Payagala, Ilan T. Rosen, Joseph A. Hagmann, Peng Zhang, Lixuan Tai, Kang L. Wang, Dean G. Jarrett, Randolph E. Elmquist, Jason M. Underwood, David B. Newell, David Goldhaber-Gordon

Abstract: Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena… ▽ More Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena like composite fermions, charge density waves, and topological properties [1-2]. New materials, like magnetically doped topological insulators (MTIs), offer access to the quantum anomalous Hall effect, which in its ideal form, could become a future resistance standard needing only a small permanent magnet to activate a quantized resistance value [3-5]. Furthermore, these devices could operate at zero-field for measurements, making the dissemination of the ohm more economical and portable. Here we present results on precision measurements of the h/e2 quantized plateau of Cr-Doped (BixSb1-x)2Te3 and give them context by comparing them to modern graphene-based resistance standards. Ultimately, MTI-based devices could be combined in a single system with magnetic-field-averse Josephson voltage standards to obtain an alternative quantum current standard. △ Less

Submitted 12 May, 2022; originally announced May 2022.

Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene

Authors: Ngoc Thanh Mai Tran, Swapnil M. Mhatre, Cristiane N. Santos, Adam J. Biacchi, Mathew L. Kelley, Heather M. Hill, Dipanjan Saha, Chi-Te Liang, Randolph E. Elmquist, David B. Newell, Benoit Hackens, Christina A. Hacker, Albert F. Rigosi

Abstract: This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device proces… ▽ More This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelecton spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band. △ Less

Submitted 15 April, 2022; originally announced April 2022.

Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices

Authors: Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Dipanjan Saha, Angela R. Hight Walker, Chi-Te Liang, Randolph E. Elmquist, David B. Newell, Albert F. Rigosi

Abstract: This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and… ▽ More This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices post-exposure were performed with transport temperatures between 300 K and 1.5 K. Ambient conditions are applied to non-transport measurements to replicate the most likely laboratory conditions for handling devices using this doping method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements. △ Less

Submitted 15 April, 2022; originally announced April 2022.

Large-scale five- and seven-junction epitaxial graphene devices

Authors: Dinesh Patel, Martina Marzano, Chieh-I Liu, Heather M. Hill, Mattias Kruskopf, Hanbyul Jin, Jiuning Hu, David B. Newell, Chi-Te Liang, Randolph Elmquist, Albert F. Rigosi

Abstract: The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the anal… ▽ More The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness. △ Less

Submitted 26 March, 2022; v1 submitted 12 March, 2022; originally announced March 2022.

Nonconventional Quantized Hall Resistances Obtained with $νにゅー= 2$ Equilibration in Epitaxial Graphene $p-n$ Junctions

Authors: Albert F. Rigosi, Dinesh Patel, Martina Marzano, Mattias Kruskopf, Heather M. Hill, Hanbyul Jin, Jiuning Hu, Angela R. Hight Walker, Massimo Ortolano, Luca Callegaro, Chi-Te Liang, David B. Newell

Abstract: We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantize… ▽ More We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $νにゅー=2$ ($R_H\approx 12906 Ωおーむ$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials. △ Less

Submitted 24 January, 2022; originally announced January 2022.

Algorithm for constructing customized quantized resistances in graphene $p-n$ junctions

Authors: Albert F. Rigosi, Martina Marzano, Antonio Levy, Heather M. Hill, Dinesh K. Patel, Mattias Kruskopf, Hanbyul Jin, Randolph E. Elmquist, David B. Newell

Abstract: An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $νにゅー=2$ plateau $R_H \approx 12906 Ωおーむ$ and take the form:… ▽ More An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $νにゅー=2$ plateau $R_H \approx 12906 Ωおーむ$ and take the form: $\frac{a}{b}R_H$. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene-based devices with multiple source and drain terminals. △ Less

Submitted 20 January, 2022; originally announced January 2022.

Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions

Authors: Jiuning Hu, Albert F. Rigosi, Mattias Kruskopf, Yanfei Yang, Bi-Yi Wu, Jifa Tian, Alireza R. Panna, Hsin-Yen Lee, Shamith U. Payagala, George R. Jones, Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell

Abstract: We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditio… ▽ More We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating. △ Less

Submitted 10 January, 2022; originally announced January 2022.

Analysis of Raman and Ellipsometric Responses of Nb$_{x}$W$_{1-x}$Se$_{2}$ alloys

Authors: Albert F. Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela R. Hight Walker, Albert V. Davydov, David B. Newell

Abstract: The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe2 and WSe2, followed by an optical analysi… ▽ More The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe2 and WSe2, followed by an optical analysis of those alloys by utilizing Raman spectroscopy and spectroscopic ellipsometry. △ Less

Submitted 24 December, 2021; originally announced December 2021.

Examining Experimental Raman Mode Behavior in Mono- and Bi-layer 2H-TaSe$_{2}$ via Density Functional Theory

Authors: Sugata Chowdhury, Heather M. Hill, Albert F. Rigosi, Andrew Briggs, Helmuth Berger, David B. Newell, Angela R. Hight Walker, Francesca Tavazza

Abstract: Tantalum diselenide (TaSe$_{2}$) is a metallic transition metal dichalcogenide whose equilibrium structure and vibrational behavior strongly depends on temperature and thickness, including the emergence of charge density wave (CDW) states at very low T. In this work, observed modes for mono- and bi-layer are described across several spectral regions and com-pared to the bulk ones. Such modes, incl… ▽ More Tantalum diselenide (TaSe$_{2}$) is a metallic transition metal dichalcogenide whose equilibrium structure and vibrational behavior strongly depends on temperature and thickness, including the emergence of charge density wave (CDW) states at very low T. In this work, observed modes for mono- and bi-layer are described across several spectral regions and com-pared to the bulk ones. Such modes, including an experimentally observed forbidden Raman mode and low frequency CDW modes, are then matched to corresponding density functional theory (DFT) predicted vibrations, to unveil their inner working. The excellent match between experimental and computational results justifies the presented vibrational visualizations of these modes. Additional support is provided by experimental phonons seen in Raman spectra as a function of temperature and thickness. These results highlight the importance of understanding interlayer interactions and their effects on mode behaviors. △ Less

Submitted 5 December, 2020; originally announced December 2020.

Comments: arXiv admin note: substantial text overlap with arXiv:2005.11350

Influence of Dimensionality on the Charge Density Wave Phase of 2H-TaSe$_{2}$

Authors: Sugata Chowdhury, Albert F. Rigosi, Heather M. Hill, Andrew Briggs, David B. Newell, Helmuth Berger, Angela R. Hight Walker, Francesca Tavazza

Abstract: Metallic transition metal dichalcogenides like tantalum diselenide (TaSe$_{2}$) exhibit exciting behaviors at low temperatures, including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is used to investigate how structural, electronic, and Raman spectral properties of the CDW configuration change as a function of thickness. Such findings highlight… ▽ More Metallic transition metal dichalcogenides like tantalum diselenide (TaSe$_{2}$) exhibit exciting behaviors at low temperatures, including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is used to investigate how structural, electronic, and Raman spectral properties of the CDW configuration change as a function of thickness. Such findings highlight the influence of dimensionality change (from 2D to 3D) and van der Waals (vdW) interactions on the system properties. The vdW effect is most strongly present in bulk TaSe$_{2}$ in the spectral range 165 cm$^{-1}$ to 215 cm$^{-1}$. The phonons seen in the experimental Raman spectra are compared with the results calculated from the DFT models as a function of temperature and layer number. The matching of data and calculations substantiates the model's description of the CDW structural formation as a function of thickness, which is shown in depth for 1L through 6L systems. These results highlight the importance of understanding interlayer interactions, which are pervasive in many quantum phenomena involving two-dimensional confinement. △ Less

Submitted 20 August, 2021; v1 submitted 22 May, 2020; originally announced May 2020.

Comments: 6 figures, 28 pages

Confocal laser scanning microscopy: A tool for rapid optical characterization of 2D materials

Authors: Vishal Panchal, Yanfei Yang, Guangjun Cheng, Jiuning Hu, Mattias Kruskopf, Chieh-I Liu, Albert F. Rigosi, Christos Melios, Angela R. Hight Walker, David B. Newell, Olga Kazakova, Randolph E. Elmquist

Abstract: Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample preparation, and is insusceptible to surface charging and surface contamination. CLSM leverages optical properties of graphene and provides greatly enhanc… ▽ More Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample preparation, and is insusceptible to surface charging and surface contamination. CLSM leverages optical properties of graphene and provides greatly enhanced optical contrast and mapping of thickness down to a single layer. We demonstrate the effectiveness of CLSM by measuring mechanically exfoliated and chemical vapor deposition graphene on Si/SiO2, and epitaxial graphene on SiC. In the case of graphene on Si/SiO2, both CLSM intensity and height mapping is powerful for analysis of 1-5 layers of graphene. For epitaxial graphene on SiC substrates, the CLSM intensity allows us to distinguish features such as dense, parallel 150 nm wide ribbons of graphene (associated with the early stages of the growth process) and large regions covered by the interfacial layer and 1-3 layers of graphene. In both cases, CLSM data shows excellent correlation with conventional optical microscopy, atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, scanning electron microscopy and Raman mapping, with a greatly reduced acquisition time. We demonstrate that CLSM is an indispensable tool for rapid analysis of mass-produced graphene and is equally relevant to other 2D materials. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Comments: 4 Figures

Rapid characterization of wafer-scale 2D material: Epitaxial graphene and graphene nanoribbons on SiC

Authors: Vishal Panchal, Yanfei Yang, Guangjun Cheng, Jiuning Hu, Chieh-I Liu, Albert F. Rigosi, Christos Melios, Olga Kazakova, Angela R. Hight Walker, David B. Newell, Randolph E. Elmquist

Abstract: We demonstrate that the confocal laser scanning microscopy (CLSM) provides a non-destructive, highly-efficient characterization method for large-area epitaxial graphene and graphene nanostructures on SiC substrates, which can be applied in ambient air without sample preparation and is insusceptible to surface charging or surface contamination. Based on the variation of reflected intensity from reg… ▽ More We demonstrate that the confocal laser scanning microscopy (CLSM) provides a non-destructive, highly-efficient characterization method for large-area epitaxial graphene and graphene nanostructures on SiC substrates, which can be applied in ambient air without sample preparation and is insusceptible to surface charging or surface contamination. Based on the variation of reflected intensity from regions covered by interfacial layer, single layer, bilayer, or few layer graphene, and through the correlation to the results from Raman spectroscopy and SPM, CLSM images with a high resolution (around 150 nm) reveal that the intensity contrast has distinct feature for undergrown graphene (mixing of dense, parallel graphene nanoribbons and interfacial layer), continuous graphene, and overgrown graphene. Moreover, CLSM has a real acquisition time hundreds of times faster per unit area than the supplementary characterization methods. We believe that the confocal laser scanning microscope will be an indispensable tool for mass-produced epitaxial graphene or applicable 2D materials. △ Less

Submitted 9 November, 2017; originally announced November 2017.

Pseudomagnetic Fields in a Locally Strained Graphene Drumhead

Authors: Shuze Zhu, Yinjun Huang, Nikolai K. Klimov, David B. Newell, Nikolai B. Zhitenev, Joseph A. Stroscio, Santiago D. Solares, Teng Li

Abstract: Recent experiments reveal that a scanning tunneling microscopy (STM) probe tip can generate a highly localized strain field in a graphene drumhead, which in turn leads to pseudomagnetic fields in the graphene that can spatially confine graphene charge carriers in a way similar to a lithographically defined quantum dot (QD). While these experimental findings are intriguing, their further implementa… ▽ More Recent experiments reveal that a scanning tunneling microscopy (STM) probe tip can generate a highly localized strain field in a graphene drumhead, which in turn leads to pseudomagnetic fields in the graphene that can spatially confine graphene charge carriers in a way similar to a lithographically defined quantum dot (QD). While these experimental findings are intriguing, their further implementation in nanoelectronic devices hinges upon the knowledge of key underpinning parameters, which still remain elusive. In this paper, we first summarize the experimental measurements of the deformation of graphene membranes due to interactions with the STM probe tip and a back gate electrode. We then carry out systematic coarse grained, (CG), simulations to offer a mechanistic interpretation of STM tip-induced straining of the graphene drumhead. Our findings reveal the effect of (i) the position of the STM probe tip relative to the graphene drumhead center, (ii) the sizes of both the STM probe tip and graphene drumhead, as well as (iii) the applied back-gate voltage, on the induced strain field and corresponding pseudomagnetic field. These results can offer quantitative guidance for future design and implementation of reversible and on-demand formation of graphene QDs in nanoelectronics. △ Less

Submitted 11 May, 2015; originally announced May 2015.

Comments: 21 pages, 9 figures

Journal ref: Physical Review B., 90, 075426 (2014)

Low Carrier Density Epitaxial Graphene Devices On SiC

Authors: Yanfei Yang, Lung-I Huang, Yasuhiro Fukuyama, Fan-Hung Liu, Mariano A. Real, Paola Barbara, Chi-Te Liang, David B. Newell, Randolph E. Elmquist

Abstract: Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective layer, and show that etching with aqua regia results in p-type (hole) molecular doping of our un-gated, contamination-free EG. Devices fabricated by this simple… ▽ More Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective layer, and show that etching with aqua regia results in p-type (hole) molecular doping of our un-gated, contamination-free EG. Devices fabricated by this simple process can reach a carrier density in the range of 10^10 cm^(-2) to 10^11 cm^(-2) with mobility about 8000 cm^2/V/s or higher. In a moderately doped device with a carrier density n = 2.4 x 10^11 cm^(-2) and mobility = 5200 cm^2/V/s, we observe highly developed quantized Hall resistance plateaus with filing factor of 2 at magnetic field strengths of less than 4 T. Doping concentrations can be restored to higher levels by heat treatment in Ar, while devices with both p-type and n-type majority carriers tend to drift toward lower carrier concentrations in ambient air. △ Less

Submitted 3 April, 2014; originally announced April 2014.

Microscopic Polarization in Bilayer Graphene

Authors: Gregory M. Rutter, Suyong Jung, Nikolai N. Klimov, David B. Newell, Nikolai B. Zhitenev, Joseph A. Stroscio

Abstract: Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric field or spontaneously formed through an interaction-induced symmetry breaking. Our scanning tunneling measurements reveal the microscopic nature of the bilayer… ▽ More Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric field or spontaneously formed through an interaction-induced symmetry breaking. Our scanning tunneling measurements reveal the microscopic nature of the bilayer gap to be very different from what is observed in previous macroscopic measurements or expected from current theoretical models. The potential difference between the layers, which is proportional to charge imbalance and determines the gap value, shows strong dependence on the disorder potential, varying spatially in both magnitude and sign on a microscopic level. Furthermore, the gap does not vanish at small charge densities. Additional interaction-induced effects are observed in a magnetic field with the opening of a subgap when the zero orbital Landau level is placed at the Fermi energy. △ Less

Submitted 10 March, 2011; originally announced March 2011.

Evolution of Microscopic Localization in Graphene in a Magnetic Field from Scattering Resonances to Quantum Dots

Authors: Suyong Jung, Gregory M. Rutter, Nikolai N. Klimov, David B. Newell, Irene Calizo, Angela R. Hight-Walker, Nikolai B. Zhitenev, Joseph A. Stroscio

Abstract: Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent on interactions with impurities/substrates and localization of Dirac fermions in realistic devices. We microscopically study these interactions using scanning… ▽ More Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent on interactions with impurities/substrates and localization of Dirac fermions in realistic devices. We microscopically study these interactions using scanning tunneling spectroscopy (STS) of exfoliated graphene on a SiO2 substrate in an applied magnetic field. The magnetic field strongly affects the electronic behavior of the graphene; the states condense into welldefined Landau levels with a dramatic change in the character of localization. In zero magnetic field, we detect weakly localized states created by the substrate induced disorder potential. In strong magnetic field, the two-dimensional electron gas breaks into a network of interacting quantum dots formed at the potential hills and valleys of the disorder potential. Our results demonstrate how graphene properties are perturbed by the disorder potential; a finding that is essential for both the physics and applications of graphene. △ Less

Submitted 3 November, 2010; originally announced November 2010.

Comments: to be published in Nature Physics