Showing 1–50 of 73 results for author: Noheda, B

Multi-mem behavior at reduced voltages in La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ perovskite modified with Sm:CeO$_2$

Authors: Wilson Román Acevedo, Myriam H. Aguirre, Beatriz Noheda, Diego Rubi

Abstract: Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy savings compared to the standard digital computers. Memcapacitive devices (which can change their capacitance between different non-volatile states upon the application of electrical stimulation) can significantly reduce… ▽ More Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy savings compared to the standard digital computers. Memcapacitive devices (which can change their capacitance between different non-volatile states upon the application of electrical stimulation) can significantly reduce the energy consumption of bioinspired circuitry. In the present work, we study the multimem (memristive and memcapacitive) behavior of devices based on thin films of the topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) perovskite modified with Sm:Ce$O_2$ (SCO), grown on Nb:SrTiO$_{3}$ with (001) and (110) out of plane orientations. Either the self assembling at the nanoscale of both LSMCO and SCO phases or the doping with Ce(Sm) of the LSMCO perovskite were observed for different fabrication conditions and out of plane orientations. The impact of these changes on the device electrical behavior was determined. The optimum devices resulted those with (110) orientation and Ce(Sm) doping the perovskite. These devices displayed a multimem behavior with robust memcapacitance and significantly lower operation voltages (especially the RESET voltage) in comparison with devices based on pristine LSMCO. In addition, they were able to endure electrical cycling (and the concomitant perovskite topotactic redox transition between oxidized and reduced phases) without suffering nanostructural or chemical changes. We link these properties to an enhanced perovskite reducibility upon Ce(Sm) doping. Our work contributes to increase the reliability of LSMCO based multimem systems and to reduce their operating voltages closer to the 1 V threshold, which are key issues for the development of nanodevices for neuromorphic or in memory computing. △ Less

Submitted 22 April, 2024; originally announced April 2024.

Comments: 22 pages, 8 figures

Journal ref: Phys. Rev. Mater. 8, 075003 (2024)

Dynamics of Voltage Driven Self-Sustained Oscillations in NdNiO$_3$ Neuristors

Authors: Upanya Khandelwal, Qikai Guo, Beatriz Noheda, Pavan Nukala, Saurabh Chandorkar

Abstract: Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials that show conduction mechanisms that depend superlinearly with temperature can lead to negative differential resistance (NDR) regimes, which may further be engineered a… ▽ More Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials that show conduction mechanisms that depend superlinearly with temperature can lead to negative differential resistance (NDR) regimes, which may further be engineered as self-oscillators. Thermal runaway, insulator to metal phase transitions (IMT) can lead to such superlinearity and are being extensively studied in systems such as TaO$_x$, NbO$_x$ and VO$_2$. However, ReNiO$_3$ systems that offer large tunability in metal-insulator transition temperatures are less explored so far. Here we demonstrate all-or-nothing neuron-like self-oscillations at MHz frequency and low temperatures on thin films of NdNiO$_3$, a model charge transfer insulator, and their frequency coding behavior. We study the temperature dependence of NDR and show that it vanishes even at temperatures below the IMT temperature. We also show that the threshold voltages scale with device size and that a simple electrothermal device model captures all these salient features. In contrast to existing models, our model correctly predicts the independence of oscillation amplitude with the applied voltage, offering crucial insights about the nature of fixed points in the NDR region, and the dynamics of non-linear oscillations about them. KEYWORDS: NDR, oscillations, thermal model. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Comments: 4 figures in the manuscript and 3 in Supplementary

Investigating the Electromechanical Behavior of Unconventionally Ferroelectric $Hf_{0.5}Zr_{0.5}O_{2}$-based Capacitors Through Operando Nanobeam X-ray Diffraction

Authors: Evgenios Stylianidis, Pranav Surabhi, Ruben Hamming-Green, Mart Salverda, Yingfen Wei, Arjan Burema, Sylvia Matzen, Tamalika Banerjee, Alexander Björling, Binayak Mukherjee, Sangita Dutta, Hugo Aramberri, Jorge Íñiguez, Beatriz Noheda, Dina Carbone, Pavan Nukala

Abstract: Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of epitaxial $La_{0.67}Sr_{0.33}MnO_{3}$/$Hf_{0.5}Zr_{0.5}O_{2}$/$La_{0.67}Sr_{0.33}MnO_{3}$ ferroelectric capacitors is investigated, via the sensitivity offered by n… ▽ More Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of epitaxial $La_{0.67}Sr_{0.33}MnO_{3}$/$Hf_{0.5}Zr_{0.5}O_{2}$/$La_{0.67}Sr_{0.33}MnO_{3}$ ferroelectric capacitors is investigated, via the sensitivity offered by nanobeam X-ray diffraction experiments during application of electrical bias. It is shown that the pristine rhombohedral phase exhibits a negative linear piezoelectric effect with piezoelectric coefficient ($d_{33}$) ~ -0.5 to -0.8 pm$V^{-1}$. First-principles calculations support an intrinsic negative piezoresponse. In addition, it is found that the piezoelectric response is suppressed above the coercive voltage. For higher voltages, and with the onset of DC conductivity throughout the capacitor, a second-order effect is observed. The electromechanical response observed in this work is clearly different from that of normal ferroelectrics, again underlining the unconventional nature of polarization switching in the samples. △ Less

Submitted 3 December, 2022; originally announced December 2022.

Journal ref: Advanced Electronic Materials 9, 2201298 (2023)

Unusual ferrimagnetism in CaFe2O4

Authors: Hiroki Ueda, Elizabeth Skoropata, Cinthia Piamonteze, Nazaret Ortiz Hernandez, Max Burian, Yoshikazu Tanaka, Christine Klauser, Silvia Damerio, Beatriz Noheda, Urs Staub

Abstract: Incomplete cancellation of collinear antiparallel spins gives rise to ferrimagnetism. Even if the oppositely polarized spins are owing to the equal number of a single magnetic element having the same valence state, in principle, a ferrimagnetic state can still arise from the crystallographic inequivalence of the host ions. However, experimental identification of such a state as ferrimagnetic is no… ▽ More Incomplete cancellation of collinear antiparallel spins gives rise to ferrimagnetism. Even if the oppositely polarized spins are owing to the equal number of a single magnetic element having the same valence state, in principle, a ferrimagnetic state can still arise from the crystallographic inequivalence of the host ions. However, experimental identification of such a state as ferrimagnetic is not straightforward because of the tiny magnitude expected for M and the requirement for a sophisticated technique to differentiate similar magnetic sites. We report a synchrotron-based resonant x-ray investigation at the Fe L2,3 edges on an epitaxial film of CaFe2O4, which exhibits two magnetic phases with similar energies. We find that while one phase of CaFe2O4 is antiferromagnetic, the other one is ferrimagnetic with an antiparallel arrangement of an equal number of spins between two distinct crystallographic sites with very similar local coordination environments. Our results further indicate two distinct origins of an overall minute M; one is intrinsic, from distinct Fe3+ sites, and the other one is extrinsic, arising from defective Fe2+ likely forming weakly-coupled ferrimagnetic clusters. These two origins are uncorrelated and have very different coercive fields. Hence, this work provides a direct experimental demonstration of ferrimagnetism solely due to crystallographic inequivalence of the Fe3+ as the origin of the weak M of CaFe2O4. △ Less

Submitted 21 July, 2022; originally announced July 2022.

Comments: 14 pages, 8 figures

Ferroelastic domain walls in BiFeO$_3$ as memristive networks

Authors: Jan Rieck, Davide Cipollini, Mart Salverda, Cynthia P. Quinteros, Lambert R. B. Schomaker, Beatriz Noheda

Abstract: Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from w… ▽ More Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from wall to wall through the dense network of as-grown DWs in BFO thin films. Electric field cycling at different points of the network, performed locally by conducting atomic force microscope (cAFM), induces resistive switching selectively at the DWs, both for vertical (single wall) and lateral (wall-to-wall) conduction. These findings are the first step towards investigating DWs as memristive networks for information processing and in-materio computing. △ Less

Submitted 6 July, 2022; originally announced July 2022.

Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Authors: W. Román Acevedo, M. H. Aguirre, C. Ferreyra, M. J. Sánchez, M. Rengifo, C. A. M. van den Bosch, A. Aguadero, B. Noheda, D. Rubi

Abstract: Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. Ho… ▽ More Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) films grown on Nb:SrTiO$_3$ (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation ((001) and (110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices △ Less

Submitted 7 October, 2021; originally announced October 2021.

Comments: 15 pages, 10 figures

Journal ref: Final version published in APL Materials (Vol.10, Issue 1, 2022)

Thin films of the alpha-quartz SixGe1-xO2 solid-solution

Authors: Silang Zhou, Jordi Antoja-Lleonart, Václav Ocelík, Beatriz Noheda

Abstract: SiO2 with the alpha-quartz structure is one of the most popular piezoelectrics. It is widely used in crystal oscillators, bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, and so on. GeO2 can also be crystallized into the alpha-quartz structure and it has better piezoelectric properties, with higher piezoelectric coefficient and electromechanical coupling coefficients, than Si… ▽ More SiO2 with the alpha-quartz structure is one of the most popular piezoelectrics. It is widely used in crystal oscillators, bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, and so on. GeO2 can also be crystallized into the alpha-quartz structure and it has better piezoelectric properties, with higher piezoelectric coefficient and electromechanical coupling coefficients, than SiO2. Experiments on bulk crystals and theoretical studies have shown that these properties can be tuned by varying the Si/Ge ratio in the SixGe1-xO2 solid solution. However, to the best of our knowledge, thin films of SixGe1-xO2 quartz have never been reported. Here we present the successful crystallization of SixGe1-xO2 thin films in the alpha-quartz phase on quartz substrates (SiO2) with x up to 0.75. Generally, the films grow semi-epitaxially, with the same orientation as the substrates. Interestingly, the Si0.75Ge0.25O2 composition grows fully strained by the quartz substrates and this leads to the formation of circular quartz domains with an ordered Dauphine twin structure. These studies represent a first step towards the optimization of piezoelectric quartz thin films for high frequency (> 5 GHz) applications. △ Less

Submitted 27 September, 2021; originally announced September 2021.

Comments: 12 pages, 10 figures

Phenomenological classification of metals based on resistivity

Authors: Qikai Guo, César Magén, Marcelo J. Rozenberg, Beatriz Noheda

Abstract: Efforts to understand metallic behaviour have led to important concepts such as those of strange metal, bad metal or Planckian metal. However, a unified description of metallic resistivity is still missing. An empirical analysis of a large variety of metals shows that the parallel resistor formalism used in the cuprates, which includes T-linear and T-quadratic dependence of the electron scattering… ▽ More Efforts to understand metallic behaviour have led to important concepts such as those of strange metal, bad metal or Planckian metal. However, a unified description of metallic resistivity is still missing. An empirical analysis of a large variety of metals shows that the parallel resistor formalism used in the cuprates, which includes T-linear and T-quadratic dependence of the electron scattering rates, can be used to provide a phenomenological description of the electrical resistivity in all metals, where these two contributions are shown to correspond to the two first terms of a Taylor expansion of the resistivity, detached of their physics origin, and thus, valid for any metal. Here we show that the different metallic classes are then determined by the relative magnitude of these two components and the magnitude of the extrapolated residual resistivity. These two parameters allow to categorize a few systems that are notoriously hard to ascribe to one of the currently accepted metallic classes. This approach also reveals that the T-linear term has a common origin in all cases, strengthening the arguments that propose the universal character of the Planckian dissipation bound. △ Less

Submitted 14 August, 2022; v1 submitted 5 September, 2021; originally announced September 2021.

Comments: 16 pages, 44 figures

Journal ref: Physical Review B, 2022, 106(8): 085141

Spherulitic and rotational crystal growth of Quartz thin films

Authors: Nick R. Lutjes, Silang Zhou, Jordi Antoja-Lleonart, Beatriz Noheda, Václav Ocelík

Abstract: To obtain crystalline thin films of alpha-Quartz represents a challenge due to the tendency for the material towards spherulitic growth. Thus, understanding the mechanisms that give rise to spherulitic growth can help regulate the growth process. Here the spherulitic type of 2D crystal growth in thin amorphous Quartz films was analyzed by electron back-scatter diffraction (EBSD). EBSD was used to… ▽ More To obtain crystalline thin films of alpha-Quartz represents a challenge due to the tendency for the material towards spherulitic growth. Thus, understanding the mechanisms that give rise to spherulitic growth can help regulate the growth process. Here the spherulitic type of 2D crystal growth in thin amorphous Quartz films was analyzed by electron back-scatter diffraction (EBSD). EBSD was used to measure the size, orientation, and rotation of crystallographic grains in polycrystalline SiO2 and GeO2 thin films with high spatial resolution. Individual spherulitic Quartz crystal colonies contain primary and secondary single crystal fibers, which grow radially from the colony center towards its edge, and fill a near circular crystalline area completely. During their growth, individual fibers form so-called rotational crystals, when some lattice planes are continuously bent. The directions of the lattice rotation axes in the fibers were determined by an enhanced analysis of EBSD data. A possible mechanism, including the generation of the particular type of dislocation(s), is suggested. △ Less

Submitted 3 May, 2021; originally announced May 2021.

Journal ref: Sci Rep 11, 14888 (2021)

Patterning enhanced tetragonality in BiFeO3 thin films with effective negative pressure by helium implantation

Authors: C. Toulouse, J. Fischer, S. Farokhipoor, L. Yedra, F. Carla, A. Jarnac, E. Elkaim, P. Fertey, J. -N. Audinot, T. Wirtz, B. Noheda, V. Garcia, S. Fusil, I. Peral Alonso, M. Guennou, J. Kreisel

Abstract: Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films wh… ▽ More Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films where strain was patterned locally by helium implantation. Our combined Raman, XRD and TEM study shows that the implantation causes an elongation of the BiFeO3 unit cell and ultimately a transition towards the so-called super-tetragonal polymorph via states with mixed phases. In addition, TEM reveals the onset of amorphization at a threshold dose that does not seem to impede the overall increase in tetragonality. The phase transition from the R-like to T-like BiFeO3 appears as first-order in character, with regions of phase coexistence and abrupt changes in lattice parameters. △ Less

Submitted 15 February, 2021; originally announced February 2021.

Journal ref: Physical Review Materials, 5, 024404, 2021

From hidden metal-insulator transition to Planckian-like dissipation by tuning disorder in a nickelate

Authors: Qikai Guo, Beatriz Noheda

Abstract: Heavily oxygen deficient NdNiO$_3$ (NNO) films, which are insulating due to electron localization, contain pristine regions that undergo a hidden metal-insulator transition. Increasing oxygen content increases the connectivity of the metallic regions and the metal-insulator transition is first revealed, upon reaching the percolation threshold, by the presence of hysteresis. Only upon further oxyge… ▽ More Heavily oxygen deficient NdNiO$_3$ (NNO) films, which are insulating due to electron localization, contain pristine regions that undergo a hidden metal-insulator transition. Increasing oxygen content increases the connectivity of the metallic regions and the metal-insulator transition is first revealed, upon reaching the percolation threshold, by the presence of hysteresis. Only upon further oxygenation is the global metallic state (with a change in the resistivity slope) eventually achieved. It is shown that sufficient oxygenation leads to linear temperature dependence of resistivity in the metallic state, with a scattering rate directly proportional to temperature. Despite the known difficulties to establish the proportionality constant, the experiments are consistent with a relationship 1/$τたう$= $αあるふぁk_B T/\hbar$, with $αあるふぁ$ not far from unity. These results could provide experimental support for recent theoretical predictions of disorder in a two-fluid model as a possible origin of Planckian dissipation. △ Less

Submitted 8 April, 2021; v1 submitted 23 November, 2020; originally announced November 2020.

Comments: 14 pages, 11 figures

Journal ref: npj Quantum Materials 6.1 (2021): 1-7

Operando observation of reversible oxygen migration and phase transitions in ferroelectric devices

Authors: Pavan Nukala, Majid Ahmadi, Yingfen Wei, Sytze de Graaf, Sylvia Matzen, Henny W. Zandbergen, Bart Kooi, Beatriz Noheda

Abstract: Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2 (HZO) capacitors, interfaced with oxygen conducting metals (La0.67Sr0.33MnO3, LSMO) as electrodes, using atomic resolution… ▽ More Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2 (HZO) capacitors, interfaced with oxygen conducting metals (La0.67Sr0.33MnO3, LSMO) as electrodes, using atomic resolution electron microscopy while in situ electrical biasing. By direct oxygen imaging, we observe reversible oxygen vacancy migration from the bottom to the top electrode through HZO and reveal associated reversible structural phase transitions in the epitaxial LSMO and HZO layers. We follow the phase transition pathways at the atomic scale and identify that these mechanisms are at play both in tunnel junctions and ferroelectric capacitors switched with sub-millisecond pulses. Our results unmistakably demonstrate that oxygen voltammetry and polarization switching are intertwined in these materials. △ Less

Submitted 21 October, 2020; originally announced October 2020.

Comments: 29 pages (including supplementary), 4 main figures, 6 supplementary figures

Magnetic field dependent cycloidal rotation in pristine and Ge doped CoCr$_2$O$_4$

Authors: N Ortiz Hernandez, S Parchenko, J R L Mardegan, M Porer, E Schierle, E Weschke, M Ramakrishnan, M Radovic, J A Heuver, B Noheda, N Daffe, J Dreiser, H. Ueda, U Staub

Abstract: We report a soft x-ray resonant magnetic scattering study of the spin configuration in multiferroic thin films of Co$_{0.975}$Ge$_{0.025}$Cr$_2$O$_4$ (Ge-CCO) and CoCr$_2$O$_4$ (CCO), under low- and high-magnetic fields, from 0.2 T up to 6.5 T. A characterization of Ge-CCO at a low magnetic field is performed and the results are compared to those of pure CCO. The ferrimagnetic phase transition tem… ▽ More We report a soft x-ray resonant magnetic scattering study of the spin configuration in multiferroic thin films of Co$_{0.975}$Ge$_{0.025}$Cr$_2$O$_4$ (Ge-CCO) and CoCr$_2$O$_4$ (CCO), under low- and high-magnetic fields, from 0.2 T up to 6.5 T. A characterization of Ge-CCO at a low magnetic field is performed and the results are compared to those of pure CCO. The ferrimagnetic phase transition temperature $T_C \approx 95$ K and the multiferroic transition temperature $T_S \approx 27$ K in Ge-CCO are comparable to those observed in CCO. In Ge-CCO, the ordering wave vector $\textit{(qq0)}$ observed below $T_S$ is slightly larger compared to that of CCO, and, unlike CCO, the diffraction intensity consists of two contributions that show a dissimilar x-ray polarization dependence. In Ge-CCO, the coercive field observed at low temperatures was larger than the one reported for CCO. In both compounds, an unexpected reversal of the spiral helicity and therefore the electric polarization was observed on simply magnetic field cooling. In addition, we find a change in the helicity as a function of momentum transfer in the magnetic diffraction peak of Ge-CCO, indicative of the presence of multiple magnetic spirals. △ Less

Submitted 8 October, 2020; v1 submitted 4 October, 2020; originally announced October 2020.

Comments: 20 pages, 12 figures

Journal ref: Phys. Rev. B 103, 085123 (2021)

Plausible physical mechanisms for unusual volatile/non-volatile resistive switching in HfO2-based stacks

Authors: Cynthia P. Quinteros, Jordi Antoja-Lleonart, Beatriz Noheda

Abstract: Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an atomic-layer-deposited hafnia-based stack, triggered our interest to investigate their suitability for technological implementations. In this paper, we report ou… ▽ More Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an atomic-layer-deposited hafnia-based stack, triggered our interest to investigate their suitability for technological implementations. In this paper, we report our attempts to reproduce the observed behaviour within the framework of a proposed underlying mechanism. The inability of achieving the electrical response of the original batch indicates that a key aspect in those devices has remained undetected. By comparing newly made devices with the original ones, we gather some clues on the plausible alternative mechanisms that could give rise to comparable electrical behaviours. △ Less

Submitted 3 February, 2021; v1 submitted 24 August, 2020; originally announced August 2020.

Journal ref: Condens. Matter 2021, 6, 7 (2021)

Dynamic Tilting of Ferroelectric Domain Walls via Optically Induced Electronic Screening

Authors: Youngjun Ahn, Arnoud S. Everhardt, Hyeon Jun Lee, Joonkyu Park, Anastasios Pateras, Silvia Damerio, Tao Zhou, Anthony D. DiChiara, Haidan Wen, Beatriz Noheda, Paul G. Evans

Abstract: Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO3 thin film by an above-bandgap ultrafast optical pulse changes the tilt angle that 90° a/c domain walls form with respect to the substrate-film interface. The dynamics of the changes are apparent in time-resolved… ▽ More Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO3 thin film by an above-bandgap ultrafast optical pulse changes the tilt angle that 90° a/c domain walls form with respect to the substrate-film interface. The dynamics of the changes are apparent in time-resolved synchrotron x-ray scattering studies of the domain diffuse scattering. Tilting occurs at 298 K, a temperature at which the a/b and a/c domain phases coexist but is absent at 343 K in the better ordered single-phase a/c regime. Phase coexistence at 298 K leads to increased domain-wall charge density, and thus a larger screening effect than in the single-phase regime. The screening mechanism points to new directions for the manipulation of nanoscale ferroelectricity. △ Less

Submitted 14 October, 2022; v1 submitted 15 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. Lett. 127, 097402 (2021)

Ferroelectric PbZr$_{1-x}$Ti$_x$O$_3$ by ethylene glycol-based chemical solution synthesis

Authors: Ewout van der Veer, Mónica Acuautla, Beatriz Noheda

Abstract: We have investigated a water-stable sol-gel method based on ethylene glycol as a solvent and bridging ligand for the synthesis of ferroelectric lead zirconate titanate in bulk and thin film forms. This method offers lower toxicity of the solvent, higher stability towards atmospheric moisture and a simplified synthetic procedure compared to traditional sol-gel methods. Ceramic pellets of Nb-doped l… ▽ More We have investigated a water-stable sol-gel method based on ethylene glycol as a solvent and bridging ligand for the synthesis of ferroelectric lead zirconate titanate in bulk and thin film forms. This method offers lower toxicity of the solvent, higher stability towards atmospheric moisture and a simplified synthetic procedure compared to traditional sol-gel methods. Ceramic pellets of Nb-doped lead zirconate titanate (PNZT) in the rhombohedral phase were produced with high density and good piezoelectric properties, comparable to those reported in the literature and those found in commercial piezoelectric elements. In addition, a nine-layer thin film stack was fabricated from the same sol by spin coating onto platinized silicon substrates. The films were crack-free and showed a dense perovskite grain structure with a weak (111) orientation. Piezoelectric measurements of the film showed a piezoelectric coefficient comparable to literature values and good stability towards fatigue. △ Less

Submitted 22 July, 2020; originally announced July 2020.

Crystallization of GeO2 thin films into alpha-quartz: from spherulites to single crystals

Authors: Silang Zhou, Jordi Antoja-Lleonart, Pavan Nukala, Vaclav Ocelik, Nick R. Lutjes, Beatriz Noheda

Abstract: Piezoelectric quartz SiO2 crystals are widely used in industry as oscillators. As a natural mineral, quartz and its relevant silicates are also of interest of geoscience and mineralogy. However, the nucleation and growth of quartz crystals is difficult to control and not fully understood. Here we report successful solid state crystallization of thin film of amorphous GeO2 into quartz on various su… ▽ More Piezoelectric quartz SiO2 crystals are widely used in industry as oscillators. As a natural mineral, quartz and its relevant silicates are also of interest of geoscience and mineralogy. However, the nucleation and growth of quartz crystals is difficult to control and not fully understood. Here we report successful solid state crystallization of thin film of amorphous GeO2 into quartz on various substrates including Al2O3, MgAl2O4, MgO, LaAlO3 and SrTiO3. At relatively low annealing temperatures, the crystallization process is spherulitic: with fibers growing radially from the nucleation centers and the crystal lattice rotating along the growth direction with a linear dependence between the rotation angle and the distance to the core. For increasingly higher annealing temperatures, quartz crystals begin to form. The edges of the sample play an important role facilitating nucleation followed by growth sweeping inward until the whole film is crystallized. Control of the growth allows single crystalline quartz to be synthesized. Our study reveals the complexity of the nucleation and growth process of quartz and provides insight for further studies. △ Less

Submitted 2 September, 2021; v1 submitted 8 July, 2020; originally announced July 2020.

Journal ref: Acta Materialia 215 (2021) 117069

On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices

Authors: C. Ferreyra, M. Rengifo, M. J. Sánchez, A. S. Everhard, B. Noheda, D. Rubi

Abstract: Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen v… ▽ More Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen vacancies, with the depolarizing field playing a fundamental role in the latter. We simulate our experimental results with a phenomenological model that includes both effects and we reproduce several non-trivial features of the electrical response, including resistance relaxations observed after external poling. Besides providing insight into the underlying physics of these complex devices, our work suggests that it is possible to combine non-volatile and volatile resistive changes in single ferroelectric memristors, an issue that could be useful for the development of neuromorphic devices. △ Less

Submitted 18 June, 2020; originally announced June 2020.

Comments: 23 pages in preprint form, 5 figures

Journal ref: Phys. Rev. Applied 14, 044045 (2020)

Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

Authors: Pavan Nukala, Yingfen Wei, Vincent de Haas, Qikai Guo, Jordi Antoja-Lleonart, Beatriz Noheda

Abstract: The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (… ▽ More The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading towards identifying comprehensive global trends for stabilizing r-phase polymorphs in epitaxially grown HZO thin films (6 nm) on various substrates (perovskites, hexagonal and Si). △ Less

Submitted 3 January, 2021; v1 submitted 4 May, 2020; originally announced May 2020.

Comments: Final version as it appears in the 50th Anniversary issue of Ferroelectrics

Journal ref: Ferroelectrics, 569:1, 148-163 (2020)

Electrical and acoustic self-oscillations in an epitaxial oxide for neuromorphic applications

Authors: M. Salverda, B. Noheda

Abstract: Developing materials that can lead to compact versions of artificial neurons (neuristors) and synapses (memristors) is the main aspiration of the nascent neuromorphic materials research field. Oscillating circuits are interesting as neuristors, emulating the firing of action potentials. We present room-temperature self-oscillating devices fabricated from epitaxial thin films of semiconducting TbMn… ▽ More Developing materials that can lead to compact versions of artificial neurons (neuristors) and synapses (memristors) is the main aspiration of the nascent neuromorphic materials research field. Oscillating circuits are interesting as neuristors, emulating the firing of action potentials. We present room-temperature self-oscillating devices fabricated from epitaxial thin films of semiconducting TbMnO3. We show that these electrical oscillations induce concomitant mechanical oscillations that produce audible sound waves, offering an additional degree of freedom to interface with other devices. The intrinsic nature of the mechanism governing the oscillations gives rise to a high degree of control and repeatability. Obtaining such properties in an epitaxial perovskite oxide, opens the way towards combining self-oscillating properties with those of other piezoelectric, ferroelectric, or magnetic perovskite oxides to achieve hybrid neuristor-memristor functionality in compact heterostuctures. △ Less

Submitted 7 May, 2020; v1 submitted 21 April, 2020; originally announced April 2020.

Comments: 6 manuscript pages, 2 figures, 1 supplementary figure, 1 supplementary table

Atomic Layer Deposition of SiO$_2$-GeO$_2$ multilayers

Authors: Jordi Antoja-Lleonart, Silang Zhou, Kit de Hond, Gertjan Koster, Guus Rijnders, Beatriz Noheda

Abstract: Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$ multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-l… ▽ More Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$ multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-layer growth with electron density contrast and absence of chemical intermixing, down to a periodicity of 2 atomic layers. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Comments: This manuscript has been submitted to Applied Physics Letters

Journal ref: Appl. Phys. Lett. 117, 041601 (2020)

Structure and magnetic properties of epitaxial CaFe2O4 thin films

Authors: Silvia Damerio, Pavan Nukala, Jean Juraszek, Pim Reith, Hans Hilgenkamp, Beatriz Noheda

Abstract: CaFe2O4 is a highly anisotropic antiferromagnet reported to display two spin arrangements with up-up-down-down (phase A) and up-down-up-down (phase B) configurations. The relative stability of these phases is ruled by the competing ferromagnetic and antiferromagnetic interactions between Fe3+ spins arranged in two different environments, but a complete understanding of the magnetic structure of th… ▽ More CaFe2O4 is a highly anisotropic antiferromagnet reported to display two spin arrangements with up-up-down-down (phase A) and up-down-up-down (phase B) configurations. The relative stability of these phases is ruled by the competing ferromagnetic and antiferromagnetic interactions between Fe3+ spins arranged in two different environments, but a complete understanding of the magnetic structure of this material does not exist yet. In this study we investigate epitaxial CaFe2O4 thin films grown on TiO2 (110) substrates by means of Pulsed Laser Deposition (PLD). Structural characterization reveals the coexistence of two out-of-plane crystal orientations and the formation of three in-plane oriented domains. The magnetic properties of the films, investigated macroscopically as well as locally, including highly sensitive Mossbauer spectroscopy, reveal the presence of just one order parameter showing long-range ordering below T = 185 K and the critical nature of the transition. In addition, a non-zero in-plane magnetization is found, consistent with the presence of uncompensated spins at phase or domain boundaries, as proposed for bulk samples. △ Less

Submitted 28 April, 2020; v1 submitted 30 January, 2020; originally announced January 2020.

Comments: Changes are made to take into account the newly published paper by Songvilay et al. (PRB 101,014407) Changes are in last sentence of the abstract, 5th paragraph of the discussion section and conclusions paragraph

Journal ref: npj Quantum Materials 5, 33 (2020)

Stabilization of phase-pure rhombohedral HfZrO4 in Pulsed Laser Deposited thin films

Authors: Laura Bégon-Lours, Martijn Mulder, Pavan Nukala, Sytze de Graaf, Yorick Birkhölzer, Bart Kooi, Beatriz Noheda, Gertjan Koster, Guus Rijnders

Abstract: Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques… ▽ More Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques do not allow to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast (DPC) Scanning Transmission Electron Microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with X-Rays diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated. △ Less

Submitted 25 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Materials 4, 043401 (2020)

Tunable resistivity exponents in the metallic phase of epitaxial nickelates

Authors: Qikai Guo, Saeedeh Farokhipoor, César Magén, Francisco Rivadulla, Beatriz Noheda

Abstract: We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO3 as a function of epitaxial strain. Strain-free thin-films show a linear dependence of the resistivity vs temperature, consistent with a classical Fermi gas ruled by electron-phonon interactions. In addition, the apparent temperature exponent, n, can be tuned with the epitaxial strain between n= 1 and n= 3.… ▽ More We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO3 as a function of epitaxial strain. Strain-free thin-films show a linear dependence of the resistivity vs temperature, consistent with a classical Fermi gas ruled by electron-phonon interactions. In addition, the apparent temperature exponent, n, can be tuned with the epitaxial strain between n= 1 and n= 3. We discuss the critical role played by quenched random disorder in the value of n. Our work shows that the assignment of Fermi/Non-Fermi liquid behaviour based on experimentally obtained resistivity exponents requires an in-depth analysis of the degree of disorder in the material. △ Less

Submitted 13 September, 2019; originally announced September 2019.

Comments: 13 pages, 12 figures

Journal ref: Nature Communications 11.1 (2020): 1-9

Magneto-ionic control of spin polarization in magnetic tunnel junctions

Authors: Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros, Thomas Maroutian, Guillaume Agnus, Philippe Lecoeur, Beatriz Noheda

Abstract: Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field switching. Here we show that, under electric field cycling of large enough magnitude, the TER can reach values as large as 10^6%. Moreover, concomitant with this… ▽ More Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field switching. Here we show that, under electric field cycling of large enough magnitude, the TER can reach values as large as 10^6%. Moreover, concomitant with this TER enhancement, the devices develop electrical control of spin polarization, with sign reversal of the TMR effect. Currently, this intermediate state exists for a limited number of cycles and understanding the origin of these phenomena is key to improve its stability. The experiments presented here point to the magneto-ionic effect as the origin of the large TER and strong magneto-electric coupling, showing that ferroelectric polarization switching of the tunnel barrier is not the main contribution. △ Less

Submitted 28 July, 2019; originally announced July 2019.

Journal ref: npj Quantum Materials 4, 62 (2019)

BaTiO3 thin films as transitional ferrroelectrics with giant dielectric response

Authors: A. S. Everhardt, T. Denneulin, A. Gruenebohm, Y-T. Shao, P. Ondrejkovic, S. Zhou, N. Domingo, G. Catalan, J. Hlinka, J-M. Zuo, S. Matzen, B. Noheda

Abstract: Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of solid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelect… ▽ More Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of solid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelectric-ferroelectric critical temperature. The flat energy landscapes close to these PTs give rise to polarization rotation under external stimuli, being responsible for the best piezoelectrics so far and a their huge market. But this approach requires complex chemistry to achieve temperature-independent PT boundaries and often involves lead-containing compounds. Here we report that such a bridging state is possible in thin films of chemically simple materials such as BaTiO3. A coexistence of tetragonal, orthorhombic and their bridging low-symmetry phases are shown to be responsible for the continuous vertical polarization rotation, recreating a smear in-transition state and leading to giant temperature-independent dielectric response. These features are distinct from those of single crystals, multi-domain crystals, ceramics or relaxor ferroelectrics, requiring a different description. We believe that other materials can be engineered in a similar way to form a class of ferroelectrics, in which MPB solid solutions are also included, that we propose to coin as transitional ferroelectrics. △ Less

Submitted 23 July, 2019; originally announced July 2019.

Comments: Limited figure quality. No Supplemental info included due to memory restrictions (available from corresponding author)

Journal ref: Applied Physics Reviews 7, 011402 (2020)

Direct epitaxial growth of polar (1-x)HfO2-(x)ZrO2 ultra-thin films on Silicon

Authors: Pavan Nukala, Jordi Antoja-Lleonart, Yingfen Wei, Lluis Yedra, Brahim Dkhil, Beatriz Noheda

Abstract: Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si as polycrystalline films, epitaxial growth was only achieved on non-Si substrates. Here we report direct epitaxy of polar phases on Si using pulsed laser deposition enabled via in situ scavenging of the native a-SiOx un… ▽ More Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si as polycrystalline films, epitaxial growth was only achieved on non-Si substrates. Here we report direct epitaxy of polar phases on Si using pulsed laser deposition enabled via in situ scavenging of the native a-SiOx under ballistic conditions. On Si (111), polar rhombohedral (r)-phase and bulk monoclinic (m-) phase coexist, with the volume of the former increasing with increasing Zr concentration. R-phase is stabilized in the regions with a direct connection between the substrate and the film through the compressive strain provided by an interfacial crystalline c-SiO2 layer., The film relaxes to a bulk m-phase in regions where a-SiOx regrows. On Si (100), we observe polar orthorhombic o-phase coexisting with m-phase, stabilized by inhomogeneous strains at the intersection of monoclinic domains. This work provides fundamental insight into the conditions that lead to the preferential stabilization of r-, o- and m-phases. △ Less

Submitted 13 July, 2019; originally announced July 2019.

Comments: 18 pages of manuscript, 7 figures

Journal ref: ACS Applied Electronic Materials 1 (2019) 2585-2593

Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers

Authors: Yingfen Wei, Sylvia Matzen, Guillaume Agnus, Mart Salverda, Pavan Nukala, Thomas Maroutian, Qihong Chen, Jianting Ye, Philippe Lecoeur, Beatriz Noheda

Abstract: A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing great potential for device miniaturization down to the nanoscale. Here we utilize ferroelectric Hf0.5Zr0.5O2 (HZO) with thickness of only 2 nm, epitaxially grown on… ▽ More A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing great potential for device miniaturization down to the nanoscale. Here we utilize ferroelectric Hf0.5Zr0.5O2 (HZO) with thickness of only 2 nm, epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a large band-gap insulating barrier integrated in MFTJs with cobalt top electrodes. As previously reported for other MFTJs with similar electrodes, the tunneling magnetoresistance (TMR) can be tuned and its sign can even be reversed by the bias voltage across the junction. We demonstrate four non-volatile resistance states generated by magnetic and electric field switching with high reproducibility in this system. △ Less

Submitted 8 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Applied 12, 031001 (2019)

Periodicity doubling cascades: direct observation in ferroelastic materials

Authors: Arnoud S. Everhardt, Silvia Damerio, Jacob A. Zorn, Silang Zhou, Neus Domingo, Gustau Catalan, Ekhard K. H. Salje, Long-Qing Chen, Beatriz Noheda

Abstract: Very sensitive responses to external forces are found near phase transitions. However, phase transition dynamics and pre-equilibrium phenomena are difficult to detect and control. We have directly observed that the equilibrium domain structure following a phase transition in BaTiO3, a ferroelectric and ferroelastic material, is attained by halving of the domain periodicity, sequentially and multip… ▽ More Very sensitive responses to external forces are found near phase transitions. However, phase transition dynamics and pre-equilibrium phenomena are difficult to detect and control. We have directly observed that the equilibrium domain structure following a phase transition in BaTiO3, a ferroelectric and ferroelastic material, is attained by halving of the domain periodicity, sequentially and multiple times. The process is reversible, displaying periodicity doubling as temperature is increased. This observation is backed theoretically and can explain the fingerprints of domain period multiplicity observed in other systems, strongly suggesting this as a general model for pattern formation during phase transitions in ferroelastic materials. △ Less

Submitted 25 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Lett. 123, 087603 (2019)

A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films

Authors: Yingfen Wei, Pavan Nukala, Mart Salverda, Sylvia Matzen, Hong Jian Zhao, Jamo Momand, Arnoud Everhardt, Graeme R. Blake, Philippe Lecoeur, Bart J. Kooi, Jorge Íñiguez, Brahim Dkhil, Beatriz Noheda

Abstract: After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards t… ▽ More After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, which are under epitaxial compressive strain and are predominantly (111)-oriented, display large FE polarization values up to 34 μみゅーC/cm2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This unexpected finding allows us to propose a compelling model for the formation of the FE phase. In addition, these results point towards nanoparticles of simple oxides as a vastly unexplored class of nanoscale ferroelectrics. △ Less

Submitted 26 January, 2018; originally announced January 2018.

Journal ref: Nature Materials 17,1095-1100 (2018)

Magnetic properties of strained multiferroic CoCr2O4: a soft X-ray study

Authors: Y. W. Windsor, C. Piamonteze, M. Ramakrishnan, A. Scaramucci, L. Rettig, J. A. Huever, E. M. Bothschafter, A. Alberca, S. R. V. Avula, B. Noheda, U. Staub

Abstract: Using resonant soft X-ray techniques we follow the magnetic behavior of a strained epitaxial film of CoCr2O4, a type-II multiferroic. The film is [110]-oriented, such that both the ferroelectric and ferromagnetic moments can coexist in plane. X-ray magnetic circular dichroism (XMCD) is used in scattering and in transmission modes to probe the magnetization of Co and Cr separately. The transmission… ▽ More Using resonant soft X-ray techniques we follow the magnetic behavior of a strained epitaxial film of CoCr2O4, a type-II multiferroic. The film is [110]-oriented, such that both the ferroelectric and ferromagnetic moments can coexist in plane. X-ray magnetic circular dichroism (XMCD) is used in scattering and in transmission modes to probe the magnetization of Co and Cr separately. The transmission measurements utilized X-ray excited optical luminescence from the substrate. Resonant soft X-ray diffraction (RSXD) was used to study the magnetic order of the low temperature phase. The XMCD signals of Co and Cr appear at the same ordering temperature Tc~90K, and are always opposite in sign. The coercive field of the Co and of Cr moments is the same, and is approximately two orders of magnitude higher than in bulk. Through sum rules analysis an enlarged Co2+ orbital moment (m_L) is found, which can explain this hardening. The RSXD signal of the (q q 0) reflection appears below Ts, the same ordering temperature as the conical magnetic structure in bulk, indicating that this phase remains multiferroic under strain. To describe the azimuthal dependence of this reflection, a slight modification is required to the spin model proposed by the conventional Lyons-Kaplan-Dwight-Menyuk theory for magnetic spinels. Lastly, a slight increase in reflected intensity is observed below Ts=27K when measuring at the Cr edge (but not at the Co edge). △ Less

Submitted 27 February, 2017; originally announced February 2017.

Comments: 28 pages, 15 figures

Journal ref: Phys. Rev. B 95, 224413 (2017)

Strain-Induced Magnetic Anisotropy in Epitaxial Thin Films of the Spinel CoCr$_2$O$_4$

Authors: Jeroen A. Heuver, Andrea Scaramucci, Yves Blickenstorfer, Sylvia Matzen, Nicola A. Spaldin, Claude Ederer, Beatriz Noheda

Abstract: We show that the magnetic anisotropy in spinel-structure CoCr$_2$O$_4$ thin films exhibits a strain dependence in which compressive strain induces an out-of-plane magnetic easy axis and tensile strain an in-plane easy axis, exactly opposite to the behavior reported for the related compound CoFe$_2$O$_4$. We use density functional theory calculations within the LSDA+U approximation to reproduce and… ▽ More We show that the magnetic anisotropy in spinel-structure CoCr$_2$O$_4$ thin films exhibits a strain dependence in which compressive strain induces an out-of-plane magnetic easy axis and tensile strain an in-plane easy axis, exactly opposite to the behavior reported for the related compound CoFe$_2$O$_4$. We use density functional theory calculations within the LSDA+U approximation to reproduce and explain the observed behavior. Using second-order perturbation theory, we analyse the anisotropy tensor of the Co$^{2+}$ ions in both octahedral and tetrahedral coordination, allowing us to extend our results to spinels with general arrangements of Co$^{2+}$ ions. △ Less

Submitted 10 August, 2015; originally announced August 2015.

Comments: 8 pages, 7 figures

Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films

Authors: Aisha Aqeel, Nynke Vlietstra, Jeroen A. Heuver, Gerrit E. W. Bauer, Beatriz Noheda, Bart J. van Wees, Thomas T. M. Palstra

Abstract: We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts. We observe a large enhancement of both signals below the spin-spiral (Ts = 28 K) and the spin lock-in transitions (T_{lock_in} = 14 K). The SMR and SSE response in the spin lock-in phase are one order of magnitude larger than those observed at the ferri… ▽ More We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts. We observe a large enhancement of both signals below the spin-spiral (Ts = 28 K) and the spin lock-in transitions (T_{lock_in} = 14 K). The SMR and SSE response in the spin lock-in phase are one order of magnitude larger than those observed at the ferrimagnetic transition temperature (Tc = 94 K), which indicates that the interaction between spins at the Pt|CCO interface is more efficient in the non-collinear magnetic state below Ts and T_{lock-in}. At T > Tc, magnetic field-induced SMR and SSE signals are observed, which can be explained by a high interface susceptibility. Our results show that the spin transport at the Pt|CCO interface is sensitive to the magnetic phases but cannot be explained solely by the bulk magnetization. △ Less

Submitted 6 July, 2015; originally announced July 2015.

Resistive switching in ferroelectric BiFeO3 by 1.7 eV change of the Schottky barrier height

Authors: Saeedeh Farokhipoor, Beatriz Noheda

Abstract: Using metal-ferroelectric junctions as switchable diodes was proposed several decades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom et al. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reported switching in the rectification direction and changes of the current of about 2 orders of magnitude upon switching the polarization direction of the ferroelectric layer.… ▽ More Using metal-ferroelectric junctions as switchable diodes was proposed several decades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom et al. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reported switching in the rectification direction and changes of the current of about 2 orders of magnitude upon switching the polarization direction of the ferroelectric layer. This form of resistive switching enables the read out of a ferroelectric memory state at higher speed compared to the capacitive design, without destroying the information in each reading cycle. Recently, Jiang and coworkers have shown that these Schottky barrier effects are enormous in BiFeO3, giving thousand times more switched charge than found by in PZT [A.Q. Jiang. et al., Adv. Mat. 23, 1277 (2011)]. Here, by performing local conductivity measurements, we attribute this to a large change of the Schottky barrier height between the as-grown, down-polarized domains and the up-polarized domains. These measurements allow to estimate the relative effect of polarization charges and screening charges on the conduction through the ferroelectric. △ Less

Submitted 3 December, 2012; originally announced December 2012.

Local conductivity and the role of vacancies around twin walls of (001)-BiFeO3 thin films

Authors: S. Farokhipoor, B. Noheda

Abstract: BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71o domain walls. A smaller amount of 109o domain walls are also present at the boundaries between two adjacent bundles. All as-grown twin walls display enhanced conductivity with respect to the domains during local probe meas… ▽ More BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71o domain walls. A smaller amount of 109o domain walls are also present at the boundaries between two adjacent bundles. All as-grown twin walls display enhanced conductivity with respect to the domains during local probe measurements, due to the selective lowering of the Schottky barrier between the film and the AFM tip (see S. Farokhipoor and B. Noheda, Phys. Rev. Lett. 107, 127601 (2011)). In this paper we further discuss these results and show why other conduction mechanisms are discarded. In addition we show the crucial role that oxygen vacancies play in determining the amount of conduction at the walls. This prompts us to propose that the oxygen vacancies migrating to the walls locally lower the Schottky barrier. This mechanism would then be less efficient in non-ferroelastic domain walls where one expects no strain gradients around the walls and thus (assuming that walls are not charged) no driving force for accumulation of defects. △ Less

Submitted 30 December, 2011; originally announced January 2012.

Journal ref: Journal of Applied Physics 112, 052003, 2012

Conduction through 71o domain walls in BiFeO3 thin films

Authors: S. Farokhipoor, B. Noheda

Abstract: Local conduction at domains and domains walls is investigated in BiFeO3 thin films containing mostly 71o domain walls. Measurements at room temperature reveal conduction through 71o domain walls. Conduction through domains could also be observed at high enough temperatures. It is found that, despite the lower conductivity of the domains, both are governed by the same mechanisms: in the low voltage… ▽ More Local conduction at domains and domains walls is investigated in BiFeO3 thin films containing mostly 71o domain walls. Measurements at room temperature reveal conduction through 71o domain walls. Conduction through domains could also be observed at high enough temperatures. It is found that, despite the lower conductivity of the domains, both are governed by the same mechanisms: in the low voltage regime electrons trapped at defect states are temperature-activated but the current is limited by the ferroelectric surface charges; in the large voltage regime, Schottky emission takes place and the role of oxygen vacancies is that of selectively increasing the Fermi energy at the walls and locally reducing the Schottky barrier. This understanding provides the key to engineering conduction paths in oxides. △ Less

Submitted 16 April, 2011; originally announced April 2011.

Comments: RevTeX, four two-column pages, 5 color figures

Journal ref: Physical Review Letters 107, 127601 (2011)

Fine tuning epitaxial strain in ferroelectrics: PbxSr(1-x)TiO3 on DyScO3

Authors: Gijsbert Rispens, Jeroen A. Heuver, Beatriz Noheda

Abstract: Epitaxial strain can be used to modify the properties of ferroelectric thin films. From the experimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate how, by using a suitable combination of composition and substrate, the magnitude of the epitaxial strain can be controlled in a continuous manner. The phase diagram of PbxSr1-xTiO3 films grown epitaxially on (11… ▽ More Epitaxial strain can be used to modify the properties of ferroelectric thin films. From the experimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate how, by using a suitable combination of composition and substrate, the magnitude of the epitaxial strain can be controlled in a continuous manner. The phase diagram of PbxSr1-xTiO3 films grown epitaxially on (110)-DyScO3 is calculated using a Devonshire-Landau approach. A boundary between in-plane and out-of-plane oriented ferroelectric phases is predicted to take place at $x \approx$ 0.8. A series of PbxSr1-xTiO3 films grown by MBE show good agreement with the proposed phase diagram △ Less

Submitted 19 November, 2010; originally announced November 2010.

Comments: The following article has been submitted to Applied Physics Letters

Domain wall magnetism in thin films of orthorhombic manganites

Authors: Christophe J. M. Daumont, Sriram Venkatesan, Bart J. Kooi, Jeff Th. M. De Hosson, Beatriz Noheda

Abstract: Thin films of orthorhombic TbMnO3, as well as other orthorhombic manganites, epitaxially grown on cubic SrTiO3 substrates display an induced magnetic moment that is absent in the bulk (antiferromagnetic) counterpart. Here we show that there is a clear correlation between the domain microstructure and the induced magnetic moment in TbMnO3 films on SrTiO3. In addition, the distinct dependence of the… ▽ More Thin films of orthorhombic TbMnO3, as well as other orthorhombic manganites, epitaxially grown on cubic SrTiO3 substrates display an induced magnetic moment that is absent in the bulk (antiferromagnetic) counterpart. Here we show that there is a clear correlation between the domain microstructure and the induced magnetic moment in TbMnO3 films on SrTiO3. In addition, the distinct dependence of the magnetization with the film thickness is not consistent with domain magnetism and indicates that the domain walls, rather than the domains, are the origin of the net magnetic moment. Since the orientation of the domain walls can be designed by the film-substrate relationship and its density can be tuned with the film thickness, these results represent a significant step forward towards the design of devices based on domain wall functionality. △ Less

Submitted 30 January, 2014; v1 submitted 2 August, 2010; originally announced August 2010.

Comments: This paper has been withdrawn by the author due to rewriting and change of authorship

Tuning the atomic and domain structure of epitaxial films of multiferroic BiFeO3

Authors: C. J. M. Daumont, S. Farokhipoor, A. Ferri, J. C. Wojdel, Jorge Iniguez, B. J. Kooi, B. Noheda

Abstract: Recent works have shown that the domain walls of room-temperature multiferroic BiFeO3 (BFO) thin films can display distinct and promising functionalities. It is thus important to understand the mechanisms underlying domain formation in these films. High-resolution x-ray diffraction and piezo-force microscopy, combined with first-principles simulations, have allowed us to characterize both the at… ▽ More Recent works have shown that the domain walls of room-temperature multiferroic BiFeO3 (BFO) thin films can display distinct and promising functionalities. It is thus important to understand the mechanisms underlying domain formation in these films. High-resolution x-ray diffraction and piezo-force microscopy, combined with first-principles simulations, have allowed us to characterize both the atomic and domain structure of BFO films grown under compressive strain on (001)-SrTiO3, as a function of thickness. We derive a twining model that describes the experimental observations and explains why the 71o domain walls are the ones commonly observed in these films. This understanding provides us with a new degree of freedom to control the structure and, thus, the properties of BiFeO3 thin films. △ Less

Submitted 23 November, 2009; originally announced November 2009.

Comments: RevTeX; 4 two-column pages; 4 color figures. Figure 2b does not seem to display well. A proper version can be found in the source file

Phase transitions and ferroelectrics: revival and the future in the field

Authors: J. Kreisel, B. Noheda, B. Dkhil

Abstract: It appeared worthwhile to us to present a state-of-the-art look at the field of ferroelectrics. We are certainly not attempting to provide a complete review of all aspects of the field of ferroelectrics over the last years but we wish to transport a flavour of the current excitement in the field through the (subjective) choice of four specific examples of current interest: (i) Piezoelectrics and… ▽ More It appeared worthwhile to us to present a state-of-the-art look at the field of ferroelectrics. We are certainly not attempting to provide a complete review of all aspects of the field of ferroelectrics over the last years but we wish to transport a flavour of the current excitement in the field through the (subjective) choice of four specific examples of current interest: (i) Piezoelectrics and the morphotropic phase boundary, (ii) Multiferroics, (iii) The effect of high pressure on ferroelectrics and (iv) Strain-engineering in ferroelectric oxide thin films. For each topic we will try to work out both current interesting approaches and an outlook into future challenges. Throughout our discussion, the reader is referred to a list of significant review articles, books and papers in the field. △ Less

Submitted 13 September, 2009; originally announced September 2009.

Comments: Editorial overview, 31 pages, 4 Figures, 315 References

Journal ref: Phase Transitions, vol. 82, p. 633-661 (2009)

Epitaxial TbMnO3 thin films on SrTiO3 substrates: A structural study

Authors: C. J. M. Daumont, D. Mannix, Sriram Venkatesan, D. Rubi, G. Catalan, B. J. Kooi, J. Th. M. De Hosson, B. Noheda

Abstract: TbMnO$_{3}$ films have been grown under compressive strain on (001)-oriented SrTiO$_{3}$ crystals. They have an orthorhombic structure and display the (001) orientation. With increasing thickness, the structure evolves from a more symmetric (tetragonal) to a less symmetric (bulk-like orthorhombic) structure, while keeping constant the in-plane compression thereby leaving the out-of-plane lattice… ▽ More TbMnO$_{3}$ films have been grown under compressive strain on (001)-oriented SrTiO$_{3}$ crystals. They have an orthorhombic structure and display the (001) orientation. With increasing thickness, the structure evolves from a more symmetric (tetragonal) to a less symmetric (bulk-like orthorhombic) structure, while keeping constant the in-plane compression thereby leaving the out-of-plane lattice spacing unchanged. The domain microstructure of the films is also revealed, showing an increasing number of orthorhombic domains as the thickness is decreased: we directly observe ferroelastic domains as narrow as 4nm. The high density of domain walls may explain the induced ferromagnetism observed in the films, while both the decreased anisotropy and the small size of the domains could account for the absence of a ferroelectric spin spiral phase. △ Less

Submitted 11 April, 2009; v1 submitted 24 November, 2008; originally announced November 2008.

Comments: Revtex, 7 pages, two columns, 10 color figures Final version as accepted for publication in Journal of Physics: Condensed Matter-Fast track communication. Role of microstructure emphasized. Main changes: Abstract and concluding remarks modified; new Discussion section added; figure on XPS measurements removed and its analysis streamlined in experimental section

Ferromagnetism and increased ionicity in epitaxially grown TbMnO3 films

Authors: D. Rubi, C. de Graaf, C. J. M. Daumont, D. Mannix, R. Broer, B. Noheda

Abstract: Thin films of TbMnO3 have been grown on SrTiO3 substrates. The films grow under compressive strain and are only partially clamped to the substrate. This produces remarkable changes in the magnetic properties and, unlike the bulk material, the films display ferromagnetic interactions below the ordering temperature of ~40K. X-ray photoemission measurements in the films show that the Mn-3s splittin… ▽ More Thin films of TbMnO3 have been grown on SrTiO3 substrates. The films grow under compressive strain and are only partially clamped to the substrate. This produces remarkable changes in the magnetic properties and, unlike the bulk material, the films display ferromagnetic interactions below the ordering temperature of ~40K. X-ray photoemission measurements in the films show that the Mn-3s splitting is 0.3eV larger than that of the bulk. Ab initio embedded cluster calculations yield Mn-3s splittings that are in agreement with the experiment and reveal that the larger observed values are due to a larger ionicity of the films. △ Less

Submitted 28 October, 2008; originally announced October 2008.

Comments: REVTeX, 5 two-column pages, 4 EPS figures

Magnetic and dielectric properties of YbMnO3 perovskite thin films

Authors: D. Rubi, Sriram Venkatesan, B. J. Kooi, J. Th. M. De Hosson, T. T. M. Palstra, B. Noheda

Abstract: Metastable manganite perovskites displaying the antiferromagnetic so-called E-phase are predicted to be multiferroic. Due to the need of high-pressures for the synthesis of this phase, this prediction has only been confirmed in bulk HoMnO3. Here we report on the growth and characterization of YbMnO3 perovskite thin films grown under epitaxial strain. Highly-oriented thin films, with thickness do… ▽ More Metastable manganite perovskites displaying the antiferromagnetic so-called E-phase are predicted to be multiferroic. Due to the need of high-pressures for the synthesis of this phase, this prediction has only been confirmed in bulk HoMnO3. Here we report on the growth and characterization of YbMnO3 perovskite thin films grown under epitaxial strain. Highly-oriented thin films, with thickness down to ~30nm, can be obtained showing magneto-dielectric coupling and magnetic responses as those expected for the E-phase. We observe that the magnetic properties depart from the bulk behavior only in the case of ultrathin films (d< 30nm), which display a glassy magnetic behavior. We show that strain effects alone cannot account for this difference and that the film morphology plays, instead, a crucial role. △ Less

Submitted 10 July, 2008; originally announced July 2008.

Comments: RevTEX. 4 two-column pages, 5 figures. To appear in PRB-Rapids

Growth of flat SrRuO3(111) thin films suitable as bottom electrodes in heterostructures

Authors: D. Rubi, A. H. G. Vlooswijk, B. Noheda

Abstract: Thin film growth of ferroelectric or multiferroic materials on SrTiO3(111) with a buffer electrode has been hampered by the difficulty of growing flat electrodes on this polar orientation. We report on the growth and characterization of SrRuO3 thin films deposited by pulsed laser deposition on SrTiO3(111). We show that our SrRuO3(111) films are epitaxial and display magnetic bulk-like properties… ▽ More Thin film growth of ferroelectric or multiferroic materials on SrTiO3(111) with a buffer electrode has been hampered by the difficulty of growing flat electrodes on this polar orientation. We report on the growth and characterization of SrRuO3 thin films deposited by pulsed laser deposition on SrTiO3(111). We show that our SrRuO3(111) films are epitaxial and display magnetic bulk-like properties. Films presenting a thickness between 20 and 30nm are found to be very flat (with an RMS of about 0.5 nm) and therefore suitable as bottom electrodes in heterostructures. △ Less

Submitted 10 July, 2008; originally announced July 2008.

Comments: Only PDF. 14 pages including 4 color figures

Smallest 90o domains in epitaxial ferroelectric films

Authors: A. H. G. Vlooswijk, G. Catalan, A. Janssens, B. Barcones, S. Venkatesan, G. Rijnders, B. Kooi, J. T. M de Hosson, D. H. A. Blank, B. Noheda

Abstract: Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed interest was partly fuelled by the observation of ferroelectric domains in films of a few unit cells thickness, promising further size reduction of ferroelectric… ▽ More Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed interest was partly fuelled by the observation of ferroelectric domains in films of a few unit cells thickness, promising further size reduction of ferroelectric devices. It turns out that at reduced scales and dimensionalities the material's properties depend crucially on the intricacies of domain formation, that is, the way the crystal splits into regions with polarization oriented along the different energetically equivalent directions, typically at 180o and 90o from each other. Here we present a step forward in the manipulation and control of ferroelectric domains by the growth of thin films with regular self-patterned arrays of 90o domains only 7 nm wide. This is the narrowest width for 90o domains in epitaxial ferroelectrics that preserves the film lateral coherence, independently of the substrate. △ Less

Submitted 17 June, 2007; originally announced June 2007.

Comments: 9 pages (4 two-column text pages + 4 figures + 1 supplementary figure). Source is 1 TeX file + 5 figures in PDF format

Thin Lead Titanate films grown by Molecular Beam Epitaxy

Authors: Gijsbert Rispens, Beatriz Noheda

Abstract: The growth of atomically-flat thin films of ferroelectric PbTiO3 on SrTiO3 substrates, using molecular beam epitaxy, is reported. The main issue in the growth of these materials is the high volatility of lead. This can be largely overcome by using PbO, instead of Pb, as a source and by using atomic oxygen during growth. The continuous decrease of the out-of-plane lattice parameter with increasin… ▽ More The growth of atomically-flat thin films of ferroelectric PbTiO3 on SrTiO3 substrates, using molecular beam epitaxy, is reported. The main issue in the growth of these materials is the high volatility of lead. This can be largely overcome by using PbO, instead of Pb, as a source and by using atomic oxygen during growth. The continuous decrease of the out-of-plane lattice parameter with increasing temperature in the investigated range, indicates that PbTiO3 is still ferroelectric at the growth temperature (Tg= 600oC), which agrees with the theoretical prediction of TC= 765oC (compared to TCbulk= 490oC) for the present mismatch strain values. △ Less

Submitted 20 April, 2007; originally announced April 2007.

Comments: Proceedings of the Rank-Prize symposium on Opto-electronics held in Grasmere (UK), September 2006. To appear in "Ferroelectrics"

Polar domains in lead titanate films under tensile strain

Authors: G. Catalan, A. Janssens, G. Rispens, S. Csiszar, O. Seeck, G. Rijnders, D. H. A. Blank, B. Noheda

Abstract: Thin films of PbTiO3, a classical ferroelectric, have been grown under tensile strain on single-crystal substrates of DyScO3. The films, of only 5nm thickness, grow fully coherent with the substrate and show no crystallographic twin domains, as evidenced by synchrotron x-ray diffraction. A mapping of the reciprocal space reveals intensity modulations (satellites) due to regularly-spaced polar do… ▽ More Thin films of PbTiO3, a classical ferroelectric, have been grown under tensile strain on single-crystal substrates of DyScO3. The films, of only 5nm thickness, grow fully coherent with the substrate and show no crystallographic twin domains, as evidenced by synchrotron x-ray diffraction. A mapping of the reciprocal space reveals intensity modulations (satellites) due to regularly-spaced polar domains in which the polarization appears rotated away from the substrate normal, characterizing a low symmetry phase not observed in the bulk material. This could have important practical implications since these phases are known to be responsible for ultrahigh piezoelectric responses in complex systems. △ Less

Submitted 4 March, 2006; v1 submitted 24 December, 2005; originally announced December 2005.

Comments: Nature of changes: Slightly modified abstract, introduction and conclusion paragraphs to make it more accessible to the general reader. Corrected a typo in the value of the domain period. These changes do not affect the content and results. To be published in PRL

Journal ref: Physical Review Letters 96, 127602 (2006)

Bridging Phases at the Morphotropic Boundaries of Lead-Oxide Solid Solutions

Authors: B. Noheda, D. E. Cox

Abstract: Ceramic solid solutions of PbZr(1-x)TixO3 (PZT) with compositions of about x= 0.50 are well-known for their extraordinarily large piezoelectric responses. The latter are highly anisotropic, and it was recently shown that, for the rhombohedral compositions (x< 0.5), the piezoelectric coefficients were largest away from the polar direction, contrary to common belief. Shortly afterwards a low-symme… ▽ More Ceramic solid solutions of PbZr(1-x)TixO3 (PZT) with compositions of about x= 0.50 are well-known for their extraordinarily large piezoelectric responses. The latter are highly anisotropic, and it was recently shown that, for the rhombohedral compositions (x< 0.5), the piezoelectric coefficients were largest away from the polar direction, contrary to common belief. Shortly afterwards a low-symmetry monoclinic phase was observed by synchrotron x-ray diffraction at around x=0.50. Similar behavior and features are also present in a number of related lead-based strongly-piezoelectric single crystals, such as PMN-PT, PZN-PT, and PSN-PT, with piezoelectric coeficients of about 2500 pm/V, the highest values recorded to date. Recent experimental and theoretical work has greatly improved our understanding of these technologically-important systems, but there are still some open questions. In this review we try to summarize the most recent progress in the field. △ Less

Submitted 10 November, 2005; originally announced November 2005.

Comments: To appear in Phase Transitions special issue -'Phase transitions in giant piezoelectrics'- dedicated to the memory of Gen Shirane

Journal ref: Phase Transitions 79, 5-20 (2006)

Strain Gradients in Epitaxial Ferroelectrics

Authors: G. Catalan, B. Noheda, J. McAneney, L. Sinnamon, J. M. Gregg

Abstract: X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thickness reveals the presence of internal strain gradients across the film thickness and allows us to propose a functional form for the internal strain profile. We use this to calculate the direct influence of strain gradient, through flexoelectric coupling, on the degradation of the ferroelectric properties of thin fi… ▽ More X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thickness reveals the presence of internal strain gradients across the film thickness and allows us to propose a functional form for the internal strain profile. We use this to calculate the direct influence of strain gradient, through flexoelectric coupling, on the degradation of the ferroelectric properties of thin films with decreasing thickness, in excellent agreement with the observed behaviour. This work highlights the link between strain relaxation and strain gradients in epitaxial films, and shows the pressing need to avoid strain gradients in order to obtain thin ferroelectrics with bulk-like properties. △ Less

Submitted 18 November, 2004; originally announced November 2004.

Comments: 4 pages, 3 embedded figures (1 color), revTex4

Journal ref: Physical Review B 72, 020102R (2005)

Low-temperature phases in Pb(Zr0.52Ti0.48)O3: A neutron powder diffraction study

Authors: D. E. Cox, B. Noheda, G. Shirane

Abstract: A neutron powder diffraction study has been carried out on Pb(Zr0.52Ti0.48)O3 in order to resolve an ongoing controversy about the nature of the low-temperature structure of this strongly-piezoelectric and technologically-important material. The results of a detailed and systematic Rietveld analysis at 20 K are consistent with the coexistence of two monoclinic phases having space groups Cm and I… ▽ More A neutron powder diffraction study has been carried out on Pb(Zr0.52Ti0.48)O3 in order to resolve an ongoing controversy about the nature of the low-temperature structure of this strongly-piezoelectric and technologically-important material. The results of a detailed and systematic Rietveld analysis at 20 K are consistent with the coexistence of two monoclinic phases having space groups Cm and Ic respectively, in the approximate ratio 4:1, and thus support the findings of a recent electron diffraction study by Noheda et al. [Phys. Rev. B 66, 060103 (2002)]. The results are compared to those of two recent conflicting neutron powder diffraction studies of materials of the same nominal composition by Hatch et al. [Phys. Rev. B 65, 212101 (2002)] and Frantti et al. [Phys. Rev. B 66, 064108 (2002)]. △ Less

Submitted 9 August, 2004; originally announced August 2004.

Comments: RevTex4, 16 pages, 6 color figures

Journal ref: Physical Review B 71, 134110 (2005)