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Pressure suppression of the excitonic insulator state in Ta2NiSe5 observed by optical conductivity
Authors:
H. Okamura,
T. Mizokawa,
K. Miki,
Y. Matsui,
N. Noguchi,
N. Katayama,
H. Sawa,
M. Nohara,
Y. Lu,
H. Takagi,
Y. Ikemoto,
T. Moriwaki
Abstract:
The layered chalcogenide Ta2NiSe5 has recently attracted much interest as a strong candidate for the long sought excitonic insulator (EI). Since the physical properties of an EI are expected to depend sensitively on the external pressure, it is important to clarify the pressure evolution of microscopic electronic state in Ta2NiSe5. Here we report the optical conductivity [s(w)] of Ta2NiSe5 measure…
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The layered chalcogenide Ta2NiSe5 has recently attracted much interest as a strong candidate for the long sought excitonic insulator (EI). Since the physical properties of an EI are expected to depend sensitively on the external pressure, it is important to clarify the pressure evolution of microscopic electronic state in Ta2NiSe5. Here we report the optical conductivity [s(w)] of Ta2NiSe5 measured at high pressures to 10 GPa and at low temperatures to 8 K. With cooling at ambient pressure, s(w) develops an energy gap of about 0.17 eV and a pronounced excitonic peak at 0.38 eV, as already reported in the literature. Upon increasing pressure, the energy gap becomes narrower and the excitonic peak is broadened. Above a structural transition at Ps~3 GPa, the energy gap becomes partially filled, indicating that Ta2NiSe5 is a semimetal after the EI state is suppressed by pressure. At higher pressures, s(w) exhibits metallic characteristics with no energy gap. The detailed pressure evolution of s(w) is presented, and discussed mainly in terms of a weakening of excitonic correlation with pressure.
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Submitted 25 August, 2022;
originally announced August 2022.
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Hybridization-gap Formation and Superconductivity in the Pressure-induced Semimetallic Phase of the Excitonic Insulator Ta$_2$NiSe$_5$
Authors:
Kazuyuki Matsubayashi,
Hidekazu Okamura,
Takashi Mizokawa,
Naoyuki Katayama,
Akitoshi Nakano,
Hiroshi Sawa,
Tatsuya Kaneko,
Tatsuya Toriyama,
Takehisa Konishi,
Yukinori Ohta,
Hiroto Arima,
Rina Yamanaka,
Akihiko Hisada,
Taku Okada,
Yuka Ikemoto,
Taro Moriwaki,
Koji Munakata,
Akiko Nakao,
Minoru Nohara,
Yangfan Lu,
Hidenori Takagi,
Yoshiya Uwatoko
Abstract:
The excitonic insulator Ta$_2$NiSe$_5$ experiences a first-order structural transition under pressure from rippled to flat layer-structure at Ps = 3 GPa, which drives the system from an almost zero-gap semiconductor to a semimetal. The pressure-induced semimetal, with lowering temperature, experiences a transition to another semimetal with a partial-gap of 0.1-0.2 eV, accompanied with a monoclinic…
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The excitonic insulator Ta$_2$NiSe$_5$ experiences a first-order structural transition under pressure from rippled to flat layer-structure at Ps = 3 GPa, which drives the system from an almost zero-gap semiconductor to a semimetal. The pressure-induced semimetal, with lowering temperature, experiences a transition to another semimetal with a partial-gap of 0.1-0.2 eV, accompanied with a monoclinic distortion analogous to that occurs at the excitonic transition below Ps. We argue that the partial-gap originates primarily from a symmetry-allowed hybridization of Ta-conduction and Ni-valence bands due to the lattice distortion, indicative of the importance of electron-lattice coupling. The transition is suppressed with increasing pressure to Pc = 8 GPa. Superconductivity with a maximum Tsc = 1.2 K emerges around Pc, likely mediated by strongly electron-coupled soft phonons. The electron-lattice coupling is as important ingredient as the excitonic instability in Ta2NiSe5.
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Submitted 1 July, 2021; v1 submitted 2 June, 2021;
originally announced June 2021.
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Robust hybridization gap in a Kondo Insulator YbB${}_{12}$ probed by femtosecond optical spectroscopy
Authors:
A. R. Pokharel,
S. Y. Agustsson,
V. V. Kabanov,
F. Iga,
T. Takabatake,
H. Okamura,
J. Demsar
Abstract:
In heavy fermions the relaxation dynamics of photoexcited carriers has been found to be governed by the low energy indirect gap, E$_{g}$, resulting from hybridization between localized moments and conduction band electrons. Here, carrier relaxation dynamics in a prototype Kondo insulator YbB${}_{12}$ is studied over large range of temperatures and over three orders of magnitude. We utilize the int…
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In heavy fermions the relaxation dynamics of photoexcited carriers has been found to be governed by the low energy indirect gap, E$_{g}$, resulting from hybridization between localized moments and conduction band electrons. Here, carrier relaxation dynamics in a prototype Kondo insulator YbB${}_{12}$ is studied over large range of temperatures and over three orders of magnitude. We utilize the intrinsic non-linearity of dynamics to quantitatively determine microscopic parameters, such as electron-hole recombination rate. The extracted value reveals that hybridization is accompanied by a strong charge transfer from localized 4f-levels. The results imply the presence of a hybridization gap up to temperatures of the order of E$_{g}$/k$_{B}\approx200$ K, which is extremely robust against electronic excitation. Finally, below 20 K the data reveal changes in the low energy electronic structure, attributed to short-range antiferromagnetic correlations between the localized levels.
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Submitted 4 March, 2021;
originally announced March 2021.
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Optical Conductivity Study of $f$ Electron States in YbCu$_2$Ge$_2$ at High Pressures to 20 GPa
Authors:
H. Okamura,
M. Nagata,
A. Tsubouchi,
Y. Onuki,
Y. Ikemoto,
T. Moriwaki
Abstract:
Optical conductivity [$σ(ω)$] of YbCu$_2$Ge$_2$ has been measured at external pressures ($P$) to 20 GPa, to study the $P$ evolution of $f$ electron hybridized states. At $P$=0, $σ(ω)$ shows a marked mid-infrared (mIR) peak at 0.37 eV, which is due to optical excitations from $f^{14}$ (Yb$^{2+}$) state located below the Fermi level. With increasing $P$, the mIR peak shows significant shifts to lowe…
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Optical conductivity [$σ(ω)$] of YbCu$_2$Ge$_2$ has been measured at external pressures ($P$) to 20 GPa, to study the $P$ evolution of $f$ electron hybridized states. At $P$=0, $σ(ω)$ shows a marked mid-infrared (mIR) peak at 0.37 eV, which is due to optical excitations from $f^{14}$ (Yb$^{2+}$) state located below the Fermi level. With increasing $P$, the mIR peak shows significant shifts to lower energy, reaching 0.18 eV at $P$=20 GPa. This result indicates that the $f^{14}$ energy level increases toward the Fermi level with $P$. Such a shift of the $f$ electron level with $P$ has been expected from theoretical considerations, but had never been demonstrated by spectroscopic experiment under high $P$. The obtained results are also analyzed in terms of the $P$ evolution of the conduction-$f$ electron hybridization.
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Submitted 25 September, 2019;
originally announced September 2019.
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Contrasting pressure evolutions of $f$ electron hybridized states in CeRhIn$_5$ and YbNi$_3$Ga$_9$: an optical conductivity study
Authors:
H. Okamura,
A. Takigawa,
T. Yamasaki,
E. D. Bauer,
S. Ohara,
Y. Ikemoto,
T. Moriwaki
Abstract:
Optical conductivity [$σ(ω)$] of CeRhIn$_5$ and YbNi$_3$Ga$_9$ have been measured at external pressures to 10 GPa and at low temperatures to 6 K. Regarding CeRhIn$_5$, at ambient pressure the main feature in $σ(ω)$ is a Drude peak due to free carriers. With increasing pressure, however, a characteristic mid-infrared (mIR) peak rapidly develops in $σ(ω)$, and its peak energy and width increase with…
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Optical conductivity [$σ(ω)$] of CeRhIn$_5$ and YbNi$_3$Ga$_9$ have been measured at external pressures to 10 GPa and at low temperatures to 6 K. Regarding CeRhIn$_5$, at ambient pressure the main feature in $σ(ω)$ is a Drude peak due to free carriers. With increasing pressure, however, a characteristic mid-infrared (mIR) peak rapidly develops in $σ(ω)$, and its peak energy and width increase with pressure. These features are consistent with an increased conduction ($c$)-$f$ electron hybridization at high pressure, and show that the pressure has tuned the electronic state of CeRhIn$_5$ from very weakly to strongly hybridized ones. As for YbNi$_3$Ga$_9$, in contrast, a marked mIR peak is observed already at ambient pressure, indicating a strong $c$-$f$ hybridization. At high pressures, however, the mIR peak shifts to lower energy and becomes diminished, and seems merged with the Drude component at 10 GPa. Namely, CeRhIn$_5$ and YbNi$_3$Ga$_9$ exhibit some opposite tendencies in the pressure evolutions of $σ(ω)$ and electronic structures. These results are discussed in terms of the pressure evolutions of $c$-$f$ hybridized electronic states in Ce and Yb compounds, in particular in terms of the electron-hole symmetry often considered between Ce and Yb compounds.
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Submitted 15 October, 2019; v1 submitted 9 August, 2019;
originally announced August 2019.
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Emergence of charge degrees of freedom under high pressure in an organic dimer-Mott insulator $β^{\prime}$-(BEDT-TTF)$_2$ICl$_2$
Authors:
K. Hashimoto,
R. Kobayashi,
H. Okamura,
H. Taniguchi,
Y. Ikemoto,
T. Moriwaki,
S. Iguchi,
M. Naka,
S. Ishihara,
T. Sasaki
Abstract:
To elucidate the pressure evolution of the electronic structure in an antiferromagnetic dimer-Mott (DM) insulator $β^{\prime}$-(BEDT-TTF)$_2$ICl$_2$, which exhibits superconductivity at 14.2 K under 8 GPa, we measured the polarized infrared (IR) optical spectra under high pressure. At ambient pressure, two characteristic bands due to intra- and interdimer charge transfers have been observed in the…
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To elucidate the pressure evolution of the electronic structure in an antiferromagnetic dimer-Mott (DM) insulator $β^{\prime}$-(BEDT-TTF)$_2$ICl$_2$, which exhibits superconductivity at 14.2 K under 8 GPa, we measured the polarized infrared (IR) optical spectra under high pressure. At ambient pressure, two characteristic bands due to intra- and interdimer charge transfers have been observed in the IR spectra, supporting that this salt is a typical half-filled DM insulator at ambient pressure. With increasing pressure, however, the intradimer charge transfer excitation shifts to much lower energies, indicating that the effective electronic state changes from half-filled to 3/4-filled as a result of weakening of dimerization. This implies that the system approaches a charge-ordered state under high pressure, in which charge degrees of freedom emerge as an important factor. The present results suggest that charge fluctuation inside of dimers plays an important role in the high-temperature superconductivity.
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Submitted 17 August, 2015;
originally announced August 2015.
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Pressure suppression of spin-density-wave gap in the optical conductivity of SrFe2As2
Authors:
H. Okamura,
K. Shoji,
M. Miyata,
H. Sugawara,
T. Moriwaki,
Y. Ikemoto
Abstract:
Optical reflectance R(w) of a pressure-induced superconductor SrFe2As2 has been measured under external pressure to 6 GPa and at temperatures to 8 K. Optical conductivity s(w) has been derived from the measured R(w). At ambient pressure, in the antiferromagnetic state below T_N=198 K, a pronounced feature develops in s(w) due to the opening of a spin density wave (SDW) gap, as already reported in…
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Optical reflectance R(w) of a pressure-induced superconductor SrFe2As2 has been measured under external pressure to 6 GPa and at temperatures to 8 K. Optical conductivity s(w) has been derived from the measured R(w). At ambient pressure, in the antiferromagnetic state below T_N=198 K, a pronounced feature develops in s(w) due to the opening of a spin density wave (SDW) gap, as already reported in the literature. With increasing pressure, the SDW gap feature in s(w) is progressively suppressed. At 4 GPa, where the sample is superconducting, the SDW gap feature in s(w) is strongly reduced than that at ambient pressure, but is still clearly observed. At 6 GPa, the SDW gap is completely suppressed. The pressure evolutions of the SDW gap magnitude and the spectral weight closely follow the pressure evolution of T_N.
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Submitted 18 March, 2013;
originally announced March 2013.
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Infrared and Terahertz Spectroscopy of Strongly Correlated Electron Systems under Extreme Conditions
Authors:
Shin-ichi Kimura,
Hidekazu Okamura
Abstract:
Owing to its high brilliance, infrared and terahertz synchrotron radiation (IR/THz-SR) has emerged as a powerful tool for spectroscopy under extreme (i.e., technically more difficult) experimental conditions such as high pressure, high magnetic field, high spatial resolution, and a combination of these. The methodologies for pressure- and magnetic-field-dependent spectroscopy and microscopy using…
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Owing to its high brilliance, infrared and terahertz synchrotron radiation (IR/THz-SR) has emerged as a powerful tool for spectroscopy under extreme (i.e., technically more difficult) experimental conditions such as high pressure, high magnetic field, high spatial resolution, and a combination of these. The methodologies for pressure- and magnetic-field-dependent spectroscopy and microscopy using IR/THz-SR have advanced rapidly worldwide. By applying them in strongly correlated electron systems (SCESs), many experimental studies have been performed on their electronic structures and phonon/molecular vibration modes under extreme conditions. Here, we review the recent progress of methodologies of IR/THz-SR spectroscopy and microscopy, and the experimental results on SCESs and other systems obtained under extreme conditions.
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Submitted 19 October, 2012;
originally announced October 2012.
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Pressure suppression of unconventional charge-density-wave state in PrRu4P12 studied by optical conductivity
Authors:
H. Okamura,
N. Ohta,
A. Takigawa,
I. Matsutori,
K. Shoji,
K. Miyata,
M. Matsunami,
H. Sugawara,
C. Sekine,
I. Shirotani,
H. Sato,
T. Moriwaki,
Y. Ikemoto,
Z. Liu,
G. L. Carr
Abstract:
Optical conductivity s(w) of PrRu4P12 has been studied under high pressure to 14 GPa, at low temperatures to 8 K, and at photon energies 12 meV-1.1 eV. The energy gap in s(w) at ambient pressure, caused by a metal-insulator transition due to an unconventional charge-density-wave formation at 63 K, is gradually filled in with increasing pressure to 10 GPa. At 14 GPa and below 30 K, s(w) exhibits a…
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Optical conductivity s(w) of PrRu4P12 has been studied under high pressure to 14 GPa, at low temperatures to 8 K, and at photon energies 12 meV-1.1 eV. The energy gap in s(w) at ambient pressure, caused by a metal-insulator transition due to an unconventional charge-density-wave formation at 63 K, is gradually filled in with increasing pressure to 10 GPa. At 14 GPa and below 30 K, s(w) exhibits a pronounced Drude-type component due to free carriers. This indicates that the initial insulating ground state at zero pressure has been turned into a metallic one at 14 GPa. This is consistent with a previous resistivity study under pressure, where the resistivity rapidly decreased with cooling below 30 K at 14 GPa. The evolution of electronic structure with pressure is discussed in terms of the hybridization between the 4f and conduction electrons.
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Submitted 23 April, 2012; v1 submitted 14 February, 2012;
originally announced February 2012.
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A simple method for the Kramers-Kronig analysis of reflectance spectra measured with diamond anvil cell
Authors:
H. Okamura
Abstract:
When the optical reflectance spectrum of a sample under high pressure is studied with a diamond anvil cell, it is measured at a sample/diamond interface. Due to the large refractive index of diamond, the resulting reflectance Rd(w) may substantially differ from that measured in vacuum. To obtain optical constants from Rd(w), therefore, the usual Kramers-Kronig (KK) transform cannot be straightforw…
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When the optical reflectance spectrum of a sample under high pressure is studied with a diamond anvil cell, it is measured at a sample/diamond interface. Due to the large refractive index of diamond, the resulting reflectance Rd(w) may substantially differ from that measured in vacuum. To obtain optical constants from Rd(w), therefore, the usual Kramers-Kronig (KK) transform cannot be straightforwardly applied, and either a spectral fitting or a modified KK transform has been used. Here we describe an alternative method to perform KK analysis on Rd(w). This method relies on the usual KK transform with an appropriate cutoff and extrapolation to Rd(w), and may offer a simpler approach to obtain infrared conductivity from measured Rd(w).
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Submitted 24 January, 2012; v1 submitted 12 January, 2012;
originally announced January 2012.
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Optical Conductivity and Electronic Structure of CeRu4Sb12 under High Pressure
Authors:
H. Okamura,
R. Kitamura,
M. Matsunami,
H. Sugawara,
H. Harima,
H. Sato,
T. Moriwaki,
Y. Ikemoto,
T. Nanba
Abstract:
Optical conductivity [s(w)] of Ce-filled skutterudite CeRu4Sb12 has been measured at high pressure to 8 GPa and at low temperature, to probe the pressure evolution of its electronic structures. At ambient pressure, a mid-infrared peak at 0.1 eV was formed in s(w) at low temperature, and the spectral weight below 0.1 eV was strongly suppressed, due to a hybridization of the f electron and conductio…
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Optical conductivity [s(w)] of Ce-filled skutterudite CeRu4Sb12 has been measured at high pressure to 8 GPa and at low temperature, to probe the pressure evolution of its electronic structures. At ambient pressure, a mid-infrared peak at 0.1 eV was formed in s(w) at low temperature, and the spectral weight below 0.1 eV was strongly suppressed, due to a hybridization of the f electron and conduction electron states. With increasing external pressure, the mid-infrared peak shifts to higher energy, and the spectral weight below the peak was further depleted. The obtained spectral data are analyzed in comparison with band calculation result and other reported physical properties. It is shown that the electronic structure of CeRu4Sb12 becomes similar to that of a narrow-gap semiconductor under external pressure.
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Submitted 12 January, 2012; v1 submitted 3 March, 2011;
originally announced March 2011.
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Pressure Tuning of an Ionic Insulator into a Heavy Electron Metal: An Infrared Study of YbS
Authors:
M. Matsunami,
H. Okamura,
A. Ochiai,
T. Nanba
Abstract:
Optical conductivity [$σ(ω)$] of YbS has been measured under pressure up to 20 GPa. Below 8 GPa, $σ(ω)$ is low since YbS is an insulator with an energy gap between fully occupied 4$f$ state and unoccupied conduction ($c$) band. Above 8 GPa, however, $σ(ω)$ increases dramatically, developing a Drude component due to heavy carriers and characteristic infrared peaks. It is shown that increasing pre…
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Optical conductivity [$σ(ω)$] of YbS has been measured under pressure up to 20 GPa. Below 8 GPa, $σ(ω)$ is low since YbS is an insulator with an energy gap between fully occupied 4$f$ state and unoccupied conduction ($c$) band. Above 8 GPa, however, $σ(ω)$ increases dramatically, developing a Drude component due to heavy carriers and characteristic infrared peaks. It is shown that increasing pressure has caused an energy overlap and hybridization between the $c$ band and 4$f$ state, thus driving the initially ionic and insulating YbS into a correlated metal with heavy carriers.
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Submitted 16 December, 2009; v1 submitted 27 July, 2009;
originally announced July 2009.
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Combining photoemission and optical spectroscopies for reliable valence determination in YbS and Yb metal
Authors:
M. Matsunami,
A. Chainani,
M. Taguchi,
R. Eguchi,
Y. Ishida,
Y. Takata,
H. Okamura,
T. Nanba,
M. Yabashi,
K. Tamasaku,
Y. Nishino,
T. Ishikawa,
Y. Senba,
H. Ohashi,
A. Ochiai,
S. Shin
Abstract:
Hard x-ray photoemission and optical spectroscopies have been performed on YbS and Yb metal to determine the precise $f$-electron occupation. A comparison of the photoemission spectra with the energy loss functions in bulk and surface, obtained from optical reflectivity, enables us to distinguish between the energy loss satellite of Yb$^{2+}$ peak and Yb$^{3+}$ multiplet. The results clearly ind…
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Hard x-ray photoemission and optical spectroscopies have been performed on YbS and Yb metal to determine the precise $f$-electron occupation. A comparison of the photoemission spectra with the energy loss functions in bulk and surface, obtained from optical reflectivity, enables us to distinguish between the energy loss satellite of Yb$^{2+}$ peak and Yb$^{3+}$ multiplet. The results clearly indicate a purely divalent Yb state except for the surface of YbS. We demonstrate that the present method is highly reliable in identifying the electronic structure and the mean valence in $f$-electron systems.
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Submitted 26 September, 2008;
originally announced September 2008.
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Infrared study of valence transition compound YbInCu4 using cleaved surfaces
Authors:
H. Okamura,
T. Michizawa,
T. Nanba,
T. Ebihara
Abstract:
Optical reflectivity R(w) of YbInCu4 single crystals has been measured across its first-order valence transition at T_v ~ 42 K, using both polished and cleaved surfaces. R(w) measured on cleaved surfaces Rc(w) was found much lower than that on polished surface Rp(w) over the entire infrared region. Upon cooling through T_v, Rc(w) showed a rapid change over a temperature range of less than 2 K, a…
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Optical reflectivity R(w) of YbInCu4 single crystals has been measured across its first-order valence transition at T_v ~ 42 K, using both polished and cleaved surfaces. R(w) measured on cleaved surfaces Rc(w) was found much lower than that on polished surface Rp(w) over the entire infrared region. Upon cooling through T_v, Rc(w) showed a rapid change over a temperature range of less than 2 K, and showed only minor changes with further cooling. In contrast, Rp(w) showed much more gradual and continuous changes across T_v, similarly to previously reported data on polished surfaces. The present result on cleaved surfaces demonstrates that the microscopic electronic structures of YbInCu4 observed with infrared spectroscopy indeed undergo a sudden change upon the valence transition. The gradual temperature-evolution of Rp(w) is most likely due to the compositional and/or Yb-In site disorders caused by polishing.
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Submitted 5 December, 2006; v1 submitted 7 September, 2006;
originally announced September 2006.
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Pressure-tuning of the c-f hybridization in Yb metal detected by infrared spectroscopy up to 18 GPa
Authors:
H. Okamura,
K. Senoo,
M. Matsunami,
T. Nanba
Abstract:
It has been known that the elemental Yb, a divalent metal at mbient pressure, becomes a mixed-valent metal under external pressure, with its valence reaching ~2.6 at 30 GPa. In this work, infrared spectroscopy has been used to probe the evolution of microscopic electronic states associated with the valence crossover in Yb at external pressures up to 18 GPa. The measured infrared reflectivity spe…
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It has been known that the elemental Yb, a divalent metal at mbient pressure, becomes a mixed-valent metal under external pressure, with its valence reaching ~2.6 at 30 GPa. In this work, infrared spectroscopy has been used to probe the evolution of microscopic electronic states associated with the valence crossover in Yb at external pressures up to 18 GPa. The measured infrared reflectivity spectrum R(w) of Yb has shown large variations with pressure. In particular, R(w) develops a deep minimum in the mid-infrared, which shifts to lower energy with increasing pressure. The dip is attributed to optical absorption due to a conduction c-f electron hybridization state, similarly to those previously observed for heavy fermion compounds. The red shift of the dip indicates that the $c$-$f$ hybridization decreases with pressure, which is consistent with the increase of valence.
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Submitted 6 September, 2006;
originally announced September 2006.
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Universal scaling in the dynamical conductivity of heavy fermion Ce and Yb compounds
Authors:
H. Okamura,
T. Watanabe,
M. Matsunami,
T. Nishihara,
N. Tsujii,
T. Ebihara,
H. Sugawara,
H. Sato,
Y. Onuki,
Y. Isikakwa,
T. Takabatake,
T. Nanba
Abstract:
Dynamical conductivity spectra s(w) have been measured for a diverse range of heavy-fermion (HF) Ce and Yb compounds. A characteristic excitation peak has been observed in the mid-infrared region of s(w) for all the compounds, and has been analyzed in terms of a simple model based on conduction (c)-f electron hybridized band. A universal scaling is found between the observed peak energies and th…
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Dynamical conductivity spectra s(w) have been measured for a diverse range of heavy-fermion (HF) Ce and Yb compounds. A characteristic excitation peak has been observed in the mid-infrared region of s(w) for all the compounds, and has been analyzed in terms of a simple model based on conduction (c)-f electron hybridized band. A universal scaling is found between the observed peak energies and the estimated c-f hybridization strengths of these HF compounds. This scaling demonstrates that the model of c-f hybridized band can generally and quantitatively describe the charge excitation spectra of a wide range of HF compounds.
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Submitted 1 February, 2007; v1 submitted 26 April, 2006;
originally announced April 2006.
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Photogenerated Carriers in SrTiO3 Probed by Mid-Infrared Absorption
Authors:
H. Okamura,
M. Matsubara,
K. Tanaka,
K. Fukui,
H. Nakagawa,
Y. Ikemoto,
T. Moriwaki,
H. Kimura,
T. Nanba
Abstract:
Infrared absorption spectra of SrTiO$_3$ have been measured under above-band-gap photoexcitations to study the properties of photogenerated carriers, which should play important roles in previously reported photoinduced phenomena in SrTiO$_3$. A broad absorption band appears over the entire mid-infrared region under photoexcitation. Detailed energy, temperature, and excitation power dependences…
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Infrared absorption spectra of SrTiO$_3$ have been measured under above-band-gap photoexcitations to study the properties of photogenerated carriers, which should play important roles in previously reported photoinduced phenomena in SrTiO$_3$. A broad absorption band appears over the entire mid-infrared region under photoexcitation. Detailed energy, temperature, and excitation power dependences of the photoinduced absorption are reported. This photo-induced absorption is attributed to the intragap excitations of the photogenerated carriers. The data show the existence of a high density of in-gap states for the photocarriers, which extends over a wide energy range starting from the conduction and valence band edges.
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Submitted 30 October, 2005;
originally announced October 2005.
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Photoinduced spin crossover in Fe-picolylamine complex: A farinfrared study on single crystals
Authors:
H. Okamura,
M. Matsubara,
T. Nanba,
T. Tayagaki,
S. Mouri,
K. Tanaka,
Y. Ikemoto,
T. Moriwaki,
H. Kimura,
G. Juhasz
Abstract:
Far-infrared spectroscopy has been performed on [Fe(2-picolylamine)3]Cl2EtOH (Fe-pic) single crystals, to probe changes in the molecular vibrations upon the photoinduced and temperature-induced spin crossovers. Synchrotron radiation has been used as the farinfrared source to overcome the strong absorption and the small sizes of the samples. Absorption lines due to FeN6 cluster vibrations, observ…
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Far-infrared spectroscopy has been performed on [Fe(2-picolylamine)3]Cl2EtOH (Fe-pic) single crystals, to probe changes in the molecular vibrations upon the photoinduced and temperature-induced spin crossovers. Synchrotron radiation has been used as the farinfrared source to overcome the strong absorption and the small sizes of the samples. Absorption lines due to FeN6 cluster vibrations, observed below 400 cm-1, show strong intensity variations upon the crossover due to the deformation of FeN6 between high-spin and low-spin states. However, they remain almost unchanged between the photo- and temperature-induced high-spin states. This is in sharp contrast to the lines at 500-700 cm-1 due to intramolecular vibrations of the picolylamine ligands, which show marked variations between the two high-spin states. It is concluded that the most important microscopic difference between the two high-spin states arises from the ligands, which is likely to reflect different states of intermolecular bonding between them.
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Submitted 13 May, 2005;
originally announced May 2005.
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Indirect and direct energy gaps in the Kondo semiconductor YbB12
Authors:
H. Okamura,
T. Michizawa,
T. Nanba,
S. Kimura,
F. Iga,
T. Takabatake
Abstract:
Optical conductivity [$σ(ω)$] of the Kondo semiconductor YbB$_{12}$ has been measured over wide ranges of temperature ($T$=8$-$690 K) and photon energy ($\hbar ω\geq$ 1.3 meV). The $σ(ω)$ data reveal the entire crossover of YbB$_{12}$ from a metallic electronic structure at high $T$ into a semiconducting one at low $T$. Associated with the gap development in $σ(ω)$, a clear onset is newly found…
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Optical conductivity [$σ(ω)$] of the Kondo semiconductor YbB$_{12}$ has been measured over wide ranges of temperature ($T$=8$-$690 K) and photon energy ($\hbar ω\geq$ 1.3 meV). The $σ(ω)$ data reveal the entire crossover of YbB$_{12}$ from a metallic electronic structure at high $T$ into a semiconducting one at low $T$. Associated with the gap development in $σ(ω)$, a clear onset is newly found at $\hbarω$=15 meV for $T \leq$ 20 K. The onset energy is identified as the gap width of YbB$_{12}$ appearing in $σ(ω)$. This gap in σ(ω)$ is interpreted as the indirect gap, which has been predicted in the band model of Kondo semiconductor. On the other hand, the strong mid-infrared (mIR) peak observed in $σ(ω)$ is interpreted as arising from the direct gap. The absorption coefficient around the onset and the mIR peak indeed show characteristic energy dependences expected for indirect and direct optical transitions in conventional semiconductors.
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Submitted 31 March, 2005;
originally announced March 2005.
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Metal-insulator transition in PrRu$_4$P$_{12}$ and SmRu$_4$P$_{12}$ investigated by optical spectroscopy
Authors:
M. Matsunami,
L. Chen,
M. Takimoto,
H. Okamura,
T. Nanba,
C. Sekine,
I. Shirotani
Abstract:
Electronic structures of the filled-skutterudite compounds PrRu$_4$P$_{12}$ and SmRu$_4$P$_{12}$, which undergo a metal-insulator transition (MIT) at $T_{\rm MI}$ = 60 K and 16 K, respectively, have been studied by means of optical spectroscopy. Their optical conductivity spectra develop an energy gap of $\sim$ 10 meV below $T_{\rm MI}$. The observed characteristics of the energy gap are qualita…
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Electronic structures of the filled-skutterudite compounds PrRu$_4$P$_{12}$ and SmRu$_4$P$_{12}$, which undergo a metal-insulator transition (MIT) at $T_{\rm MI}$ = 60 K and 16 K, respectively, have been studied by means of optical spectroscopy. Their optical conductivity spectra develop an energy gap of $\sim$ 10 meV below $T_{\rm MI}$. The observed characteristics of the energy gap are qualitatively different from those of the Kondo semiconductors. In addition, optical phonon peaks in the spectra show anomalies upon the MIT, including broadening and shifts at $T_{\rm MI}$ and an appearance of new peaks below $T_{\rm MI}$. These results are discussed in terms of density waves or orbital ordering previously predicted for these compounds.
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Submitted 20 January, 2005;
originally announced January 2005.
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Carrier-Induced Magnetic Circular Dichloism in the Magnetoresistive Pyrochlore Tl2Mn2O7
Authors:
H. Okamura,
T. Koretsune,
S. Kimura,
T. Nanba,
H. Imai,
Y. Shimakawa,
Y. Kubo
Abstract:
Infrared magnetic circular dichloism (MCD), or equivalently magneto-optical Kerr effect, has been measured on the Tl2Mn2O7 pyrochlore, which is well known for exhibiting a large magnetoresistance around the Curie temperature T_C ~ 120 K. A circularly polarized, infrared synchrotron radiation is used as the light source. A pronounced MCD signal is observed exactly at the plasma edge of the reflec…
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Infrared magnetic circular dichloism (MCD), or equivalently magneto-optical Kerr effect, has been measured on the Tl2Mn2O7 pyrochlore, which is well known for exhibiting a large magnetoresistance around the Curie temperature T_C ~ 120 K. A circularly polarized, infrared synchrotron radiation is used as the light source. A pronounced MCD signal is observed exactly at the plasma edge of the reflectivity near and below T_c. However, contrary to the conventional behavior of MCD for ferromagnets, the observed MCD of Tl2Mn2O7 grows with the applied magnetic field, and not scaled with the internal magnetization. It is shown that these results can be basically understood in terms of a classical magnetoplasma resonance. The absence of a magnetization-scaled MCD indicates a weak spin-orbit coupling of the carriers in Tl2Mn2O7. We discuss the present results in terms of the microscopic electronic structures of Tl2Mn2O7.
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Submitted 8 August, 2004; v1 submitted 5 June, 2004;
originally announced June 2004.
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Infrared study of spin crossover Fe-picolylamine complex
Authors:
Hidekzu Okamura,
Masato Matsubara,
Takeshi Tayagaki,
Koichiro Tanaka,
Yuka Ikemoto,
Hiroaki Kimura,
Taro Moriwaki,
Takao Nanba
Abstract:
Infrared (IR) absorption spectroscopy has been used to probe the evolution of microscopic vibrational states upon the temperature- and photo-induced spin crossovers in [Fe(2-picolylamine)3]Cl2EtOH (Fe-pic). To overcome the small sizes and the strong IR absorption of the crystal samples used, an IR synchrotron radiation source and an IR microscope have been used. The obtained IR spectra of Fe-pic…
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Infrared (IR) absorption spectroscopy has been used to probe the evolution of microscopic vibrational states upon the temperature- and photo-induced spin crossovers in [Fe(2-picolylamine)3]Cl2EtOH (Fe-pic). To overcome the small sizes and the strong IR absorption of the crystal samples used, an IR synchrotron radiation source and an IR microscope have been used. The obtained IR spectra of Fe-pic show large changes between high-spin and low-spin states for both the temperature- and the photo- induced spin crossovers. Although the spectra in the temperature- and photo-induced high-spin states are relatively similar to each other, they show distinct differences below 750 cm-1. This demonstrates that the photo-induced high-spin state involves microscopically different characters from those of the temperature-induced high-spin state. The results are discussed in terms of local pressure and structural deformations within the picolylamine ligands, and in terms of their possible relevance to the development of macroscopic photo-induced phase in Fe-pic.
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Submitted 15 December, 2003;
originally announced December 2003.
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Pseudogap Formation and Heavy Carrier Dynamics in Intermediate Valence YbAl3
Authors:
H. Okamura,
T. Michizawa,
T. Nanba,
T. Ebihara
Abstract:
Infrared optical conductivity [$σ(ω)$] of the intermediate valence compound YbAl$_3$ has been measured at temperatures 8 K $\leq T \leq$ 690 K to study its microscopic electronic structures. Despite the highly metallic characters of YbAl$_3$, $σ(ω)$ exhibits a clear pseudogap (strong depletion of spectral weight) of about 60 meV below 40 K. It also shows a strong mid-infrared peak centered at…
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Infrared optical conductivity [$σ(ω)$] of the intermediate valence compound YbAl$_3$ has been measured at temperatures 8 K $\leq T \leq$ 690 K to study its microscopic electronic structures. Despite the highly metallic characters of YbAl$_3$, $σ(ω)$ exhibits a clear pseudogap (strong depletion of spectral weight) of about 60 meV below 40 K. It also shows a strong mid-infrared peak centered at $\sim$ 0.25 eV. Energy-dependent effective mass and scattering rate of the carriers obtained from the data indicate the formation of a heavy-mass Fermi liquid state. These characteristic results are discussed in terms of the hybridization states between the Yb 4$f$ and the conduction electrons. It is argued, in particular, that the pseudogap and the mid-infrared peak result from the indirect and the direct gaps, respectively, within the hybridization state. band.
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Submitted 13 May, 2004; v1 submitted 31 July, 2002;
originally announced August 2002.
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Charge Dynamics in the Colossal Magneto-Resistance Pyrochlore Tl2Mn2O7
Authors:
H. Okamura,
T. Koretsune,
M. Matsunami,
S. Kimura,
T. Nanba,
H. Imai,
Y. Shimakawa,
Y. Kubo
Abstract:
Optical conductivity data s(w) of the colossal magneto-resistance (CMR) pyrochlore Tl2Mn2O7 are presented as functions of temperature (T) and externalmagnetic field (B). Upon cooling and upon applying B near the Curietemperature, where the CMR manifests itself, s(w) shows a clear transition from an insulatorlike to a metallic electronic structure as evidenced by theemergence of a pronounced Drud…
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Optical conductivity data s(w) of the colossal magneto-resistance (CMR) pyrochlore Tl2Mn2O7 are presented as functions of temperature (T) and externalmagnetic field (B). Upon cooling and upon applying B near the Curietemperature, where the CMR manifests itself, s(w) shows a clear transition from an insulatorlike to a metallic electronic structure as evidenced by theemergence of a pronounced Drude-like component below 0.2 eV. Analyses on thes(w) spectra show that both T- and B-induced evolutions of the electronicstructure are very similar to each other, and that they are universally related to the development of macroscopic magnetization (M). In particular, the effective carrier density obtained from s(w) scales with M^2 over wide ranges of T and B. The contributions to the CMR from the carrier effective mass and scattering time are also evaluated from the data.
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Submitted 22 August, 2001; v1 submitted 9 May, 2001;
originally announced May 2001.
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Optical study of the metal-nonmetal transition in NiS
Authors:
H. Okamura,
J. Naitoh,
N. Nanba,
M. Matoba,
M. Nishioka,
S. Anzai
Abstract:
Optical reflectivity study has been made on the hexagonal (NiAs-type) Ni_{1-d}S in order to probe its electronic properties, in particular those associated with the metal-nonmetal transition in this compound. Samples with d=0.005 and 0.02 are studied, which have transition temperatures Tt=246 K and 161 K, respectively. A pronounced dip appears in the reflectivity spectra upon the transition, and…
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Optical reflectivity study has been made on the hexagonal (NiAs-type) Ni_{1-d}S in order to probe its electronic properties, in particular those associated with the metal-nonmetal transition in this compound. Samples with d=0.005 and 0.02 are studied, which have transition temperatures Tt=246 K and 161 K, respectively. A pronounced dip appears in the reflectivity spectra upon the transition, and the optical conductivity spectra show that the electronic structure below Tt is similar to that of a carrier-doped semiconductor with an energy gap of ~ 0.15 eV. The optical spectra indicate that the gap becomes larger with decreasing temperature, and it becomes smaller as d increases. It is also found that the overall spectrum including the violet region can be described based on a charge-transfer-type semiconductor, consistent with recent photoemission results.
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Submitted 25 November, 1998; v1 submitted 23 November, 1998;
originally announced November 1998.
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Optical conductivity of the Kondo insulator YbB_12: Gap formation and low-energy excitations
Authors:
H. Okamura,
S. Kimura,
H. Shinozaki,
T. Nanba,
F. Iga,
N. Shimizu,
T. Takabatake
Abstract:
Optical reflectivity experiments have been conducted on single crystals of the Kondo insulator YbB_12 in order to obtain its optical conductivity, σ(ω). Upon cooling below 70 K, a strong supression of σ(ω) is seen in the far-infrared region, indicating the opening of an energy gap of ~ 25 meV. This gap development is coincident with a rapid decrease in the magnetic susceptibility, which shows th…
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Optical reflectivity experiments have been conducted on single crystals of the Kondo insulator YbB_12 in order to obtain its optical conductivity, σ(ω). Upon cooling below 70 K, a strong supression of σ(ω) is seen in the far-infrared region, indicating the opening of an energy gap of ~ 25 meV. This gap development is coincident with a rapid decrease in the magnetic susceptibility, which shows that the gap opening has significant influence on magnetic properties. A narrow, asymmetric peak is observed at ~40 meV in σ(ω), which is attributed to optical transitions between the Yb 4f-derived states across the gap. In addition, a broad peak is observed at ~0.25 eV. This peak is attributed to transitions between Yb 4f-derived states and p-d band, and is reminiscent of similar peaks previously observed for rare-earth hexaborides.
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Submitted 12 October, 1998;
originally announced October 1998.
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Inhibited Recombination of Charged Magnetoexcitons
Authors:
H. Okamura,
D. Heiman,
M. Sundaram,
A. C. Gossard
Abstract:
Time-resolved photoluminescence measurements show that the decay time for charged excitons in a GaAs two-dimensional electron gas increases by an order of magnitude at high magnetic fields. Unlike neutral excitons, the charged exciton center-of-mass is spatially confined in a ``magnetically-adjustable quantum dot'' by the cyclotron orbit and the quantum well. The inhibited recombination is expla…
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Time-resolved photoluminescence measurements show that the decay time for charged excitons in a GaAs two-dimensional electron gas increases by an order of magnitude at high magnetic fields. Unlike neutral excitons, the charged exciton center-of-mass is spatially confined in a ``magnetically-adjustable quantum dot'' by the cyclotron orbit and the quantum well. The inhibited recombination is explained by a reduced phase coherence volume of the magnetically-confined charged excitons.
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Submitted 8 October, 1998;
originally announced October 1998.
