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Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers
Authors:
Y. Baron,
J. L. Lábár,
S. Lequien,
B. Pécz,
R. Daubriac,
S. Kerdilés,
P. Acosta ALba,
C. Marcenat,
D. Débarre,
F. Lefloch,
F. Chiodi
Abstract:
We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped supe…
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We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped superconducting Si at large scale. In particular, we highlight the effect of the nanosecond laser annealing energy and the impact of multiple laser anneals. Increasing the energy leads to a linear increase of the layer thickness, and to the increase of the superconducting critical temperature $T_c$ from zero ($<35\, mK$) to $0.5\,K$. This value is comparable to superconducting Si layers realised by Gas Immersion Laser Doping where the dopants are incorporated without introducing the deep defects associated to implantation. Superconductivity only appears when the annealed depth is larger than the initial amorphous layer induced by the boron implantation. The number of subsequent anneals results in a more homogeneous doping with reduced amount of structural defects and increased conductivity. The quantitative analysis of $T_c$ concludes on a superconducting/ non superconducting bilayer, with an extremely low resistance interface. This highlights the possibility to couple efficiently superconducting Si to Si channels.
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Submitted 25 June, 2024;
originally announced June 2024.
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Direct atomic layer deposition of ultra-thin $Al_{2}O_{3}$ and $HfO_{2}$ films on gold-supported monolayer $MoS_{2}$
Authors:
E. Schilirò,
S. E. Panasci,
A. M. Mio,
G. Nicotra,
S. Agnello,
B. Pecz,
G. Z. Radnoczi,
I. Deretzis,
A. La Magna,
F. Roccaforte,
R. Lo Nigro,
F. Giannazzo
Abstract:
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD process. A preliminary multiscale characterization of large area 1L-$MoS_{2}$ exfoliated on sputter-grown Au/Ni films revealed an almost conformal…
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In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD process. A preliminary multiscale characterization of large area 1L-$MoS_{2}$ exfoliated on sputter-grown Au/Ni films revealed an almost conformal $MoS_{2}$ membrane with the Au topography and the occurrence of strain variations at the nanoscale. Ab-initio DFT calculations of $MoS_{2}$/Au(111) interface showed a significant influence of the Au substrate on the $MoS_{2}$ energy band structure, whereas small differences were accounted for the adsorption of the $H_{2}O$, TMA and TDMAHf precursors. This suggests a crucial role of nanoscale morphological effects, such as local curvature and strain of the $MoS_{2}$ membrane, in the enhanced physisorption of the precursors. Therefore, the nucleation and growth of $Al_{2}O_{3}$ and $HfO_{2}$ films onto 1L-$MoS_{2}$/Au was investigated, by monitoring the surface coverage as a function of the number (N) of ALD cycles, with N from 10 to 120. At low N values, a slower growth rate of the initially formed nuclei was observed for $HfO_{2}$, probably due to the bulky nature of the TDMAHf precursor as compared to TMA. On the other hand, the formation of continuous films was obtained in both cases for N>80 ALD cycles, corresponding to 3.6 nm $Al_{2}O_{3}$ and 3.1 nm $HfO_{2}$. Current mapping by C-AFM showed, for the same applied bias, a uniform insulating behavior of $Al_{2}O_{3}$ and the occurrence of few localized breakdown spots in the case of $HfO_{2}$, associated to less compact films regions. Finally, an increase of the 1L-$MoS_{2}$ tensile strain was observed by Raman mapping after encapsulation with both high-k films, accompanied by a reduction in the PL intensity.
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Submitted 13 May, 2023;
originally announced May 2023.
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Atomic resolution interface structure and vertical current injection in highly uniform $MoS_{2}$ heterojunctions with bulk GaN
Authors:
F. Giannazzo,
S. E. Panasci,
E. Schilirò,
G. Greco,
F. Roccaforte,
G. Sfuncia,
G. Nicotra,
M. Cannas,
S. Agnello,
E. Frayssinet,
Y. Cordier,
A. Michon,
A. Koos,
B. Pécz
Abstract:
The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sapphire substrates, whereas the growth of $MoS_{2}$ on low-dislocation-density bulk GaN can be strategic for the realization of truly vertical devices.…
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The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sapphire substrates, whereas the growth of $MoS_{2}$ on low-dislocation-density bulk GaN can be strategic for the realization of truly vertical devices. In this paper, we report the growth of ultrathin $MoS_{2}$ films, mostly composed by single-layers ($1L$), onto homoepitaxial $n-GaN$ on $n^{+}$ bulk substrates by sulfurization of a pre-deposited $MoO_{x}$ film. Highly uniform and conformal coverage of the $GaN$ surface was demonstrated by atomic force microscopy, while very low tensile strain (0.05%) and a significant $p^{+}$-type doping ($4.5 \times 10^{12} cm^{-2}$) of $1L-MoS_{2}$ was evaluated by Raman mapping. Atomic resolution structural and compositional analyses by aberration-corrected electron microscopy revealed a nearly-ideal van der Waals interface between $MoS_{2}$ and the $Ga$-terminated $GaN$ crystal, where only the topmost $Ga$ atoms are affected by oxidation. Furthermore, the relevant lattice parameters of the $MoS_{2}/GaN$ heterojunction, such as the van der Waals gap, were measured with high precision. Finally, the vertical current injection across this 2D/3D heterojunction has been investigated by nanoscale current-voltage analyses performed by conductive atomic force microscopy, showing a rectifying behavior with an average turn-on voltage $V_{on}=1.7 V$ under forward bias, consistent with the expected band alignment at the interface between $p^{+}$ doped $1L-MoS_{2}$ and $n-GaN$.
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Submitted 19 May, 2023; v1 submitted 24 April, 2023;
originally announced April 2023.
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Encapsulation of the Graphene Nanoribbon Precursor 1,2,4-trichlorobenzene in Boron Nitride Nanotubes at Room Temperature
Authors:
Ana Cadena,
Áron Pekker,
Bea Botka,
Erzsébet Dodony,
Zsolt Fogarassy,
Béla Pécz,
Katalin Kamarás
Abstract:
Graphene nanoribbons are prepared inside boron nitride nanotubes by liquid phase encapsulation and subsequent annealing of 1,2,4-trichlorobenzene. The product is imaged with high resolution transmission electron microscopy, and characterized by optical absorption and Raman spectroscopy. Carbon-containing material is detected inside the boron nitride nanotubes with energy-dispersive x-ray spectrosc…
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Graphene nanoribbons are prepared inside boron nitride nanotubes by liquid phase encapsulation and subsequent annealing of 1,2,4-trichlorobenzene. The product is imaged with high resolution transmission electron microscopy, and characterized by optical absorption and Raman spectroscopy. Carbon-containing material is detected inside the boron nitride nanotubes with energy-dispersive x-ray spectroscopy (EDS) and scanning transmission electron microscopy (STEM). The observed structures twist under the electron beam and the characteristic features of nanoribbons appear in the Raman spectra.
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Submitted 16 September, 2022; v1 submitted 3 August, 2022;
originally announced August 2022.
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2D graphitic-like gallium nitride and structural selectivity in confinement at graphene/SiC interface
Authors:
Gianfranco Sfuncia,
Giuseppe Nicotra,
Filippo Giannazzo,
Béla Pécz,
Gueorgui Kostov Gueorguiev,
Anelia Kakanakova-Georgieva
Abstract:
Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC interface by metalorganic chemical vapor deposition (MOCVD). Conductive atomic force microscopy (C-AFM) has been employed to probe vertical current injection thro…
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Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC interface by metalorganic chemical vapor deposition (MOCVD). Conductive atomic force microscopy (C-AFM) has been employed to probe vertical current injection through the graphene/SiC interface and to establish the uniformity of the intercalated areas. Scanning transmission electron microscopy (S/TEM) has been employed for atomic resolution imaging and spectroscopy. Discontinuity in the anticipated stacking sequence of graphitic-like GaN monolayers has been exposed and reasoned as a case of simultaneous formation of Ga-N and Ga-O bonds. The formation of Ga-O bonds acquires importance in instigating chemical-species-specific structural selectivity in confinement at atom-size scale.
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Submitted 21 June, 2022;
originally announced June 2022.
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Near-field optical investigation of Ni clusters inside single-walled carbon nanotubes on the nanometer scale
Authors:
Gergely Németh,
Dániel Datz,
Áron Pekker,
Takeshi Saito,
Oleg Domanov,
Hidetsugu Shiozawa,
Sándor Lenk,
Béla Pécz,
Pál Koppa,
Katalin Kamarás
Abstract:
We used scattering-type scanning near-field optical microscopy (s-SNOM) to characterize nickel nanoclusters grown inside single-walled carbon nanotubes (SWCNT). The nanotubes were filled with Ni(II) acetylacetonate and the molecules were transformed into nickel clusters via annealing. The metal clusters give high local contrast enhancement in near-field phase maps caused by the excitation of free…
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We used scattering-type scanning near-field optical microscopy (s-SNOM) to characterize nickel nanoclusters grown inside single-walled carbon nanotubes (SWCNT). The nanotubes were filled with Ni(II) acetylacetonate and the molecules were transformed into nickel clusters via annealing. The metal clusters give high local contrast enhancement in near-field phase maps caused by the excitation of free charge carriers. The near-field contrast was simulated using the finite dipole model, approximating the clusters with elliptical nanoparticles. Compared to magnetic force microscopy, s-SNOM appears much more sensitive to localize metal clusters inside carbon nanotubes. We estimate the detection threshold to be ~600 Ni atoms.
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Submitted 20 September, 2018; v1 submitted 21 August, 2018;
originally announced August 2018.
