Showing 1–50 of 52 results for author: Pan, C

Orbital torque switching in perpendicularly magnetized materials

Authors: Yuhe Yang, Ping Wang, Jiali Chen, Delin Zhang, Chang Pan, Shuai Hu, Ting Wang, Wensi Yue, Cheng Chen, Wei Jiang, Lujun Zhu, Xuepeng Qiu, Yugui Yao, Yue Li, Wenhong Wang, Yong Jiang

Abstract: The orbital Hall effect in light materials has attracted considerable attention for developing novel orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the switching of the perpendicularly magnetized materials through the orbital Hall material (OHM), i.e., Zirconium (Zr). The orbital torque efficiency of approximately 0.78 is achieved in the Zr OHM with the perpe… ▽ More The orbital Hall effect in light materials has attracted considerable attention for developing novel orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the switching of the perpendicularly magnetized materials through the orbital Hall material (OHM), i.e., Zirconium (Zr). The orbital torque efficiency of approximately 0.78 is achieved in the Zr OHM with the perpendicularly magnetized [Co/Pt]3 sample, which significantly surpasses that of the perpendicularly magnetized CoFeB/Gd/CoFeB sample (approximately 0.04). Such notable difference is attributed to the different spin-orbit correlation strength between the [Co/Pt]3 sample and the CoFeB/Gd/CoFeB sample, which has been confirmed through the theoretical calculations. Furthermore, the full magnetization switching of the [Co/Pt]3 sample with a switching current density of approximately 2.6x106 A/cm2 has been realized through Zr, which even outperforms that of the W spin Hall material. Our finding provides a guideline to understand orbital torque efficiency and paves the way to develop energy-efficient orbitronic devices. △ Less

Submitted 5 March, 2024; originally announced March 2024.

Comments: 21 pages, 4 figures, submitted

Moire synaptic transistor for homogeneous-architecture reservoir computing

Authors: Pengfei Wang, Moyu Chen, Yongqin Xie, Chen Pan, Kenji Watanabe, Takashi Taniguchi, Bin Cheng, Shi-Jun Liang, Feng Miao

Abstract: Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to implement the reservoir and the readout layer of reservoir computing system. Two-dimensional moire material, with an artificial lattice constant many times lar… ▽ More Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to implement the reservoir and the readout layer of reservoir computing system. Two-dimensional moire material, with an artificial lattice constant many times larger than the atomic length scale, is one type of most studied artificial quantum materials in community of material science and condensed-matter physics over the past years. These materials are featured with gate-tunable periodic potential and electronic correlation, thus varying the electric field allows the electrons in the moire potential per unit cell to exhibit distinct and reproducible dynamics, showing great promise in robust reservoir computing. Here, we report that a moire synaptic transistor can be used to implement the reservoir computing system with a homogeneous reservoir-readout architecture. The synaptic transistor is fabricated based on a h-BN/bilayer graphene/h-BN moire heterostructure, exhibiting ferroelectricity-like hysteretic gate voltage dependence of resistance. Varying the magnitude of the gate voltage enables the moire transistor to be switched between long-term memory and short-term memory with nonlinear dynamics. By employing the short- and long-term memory as the reservoir nodes and weights of the readout layer, respectively, we construct a full-moire physical neural network and demonstrate that the classification accuracy of 90.8% can be achieved for the MNIST handwritten digit database. Our work would pave the way towards the development of neuromorphic computing based on the moire materials. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Journal ref: Chin. Phys. Lett. 2023 40 (11): 117201

Pressure-induced color change arising from transformation between intra- and inter-band transitions in LuH$_{2\pm x}$N$_{y}$

Authors: Zhe Liu, Yingjie Zhang, Shenyang Huang, Xue Ming, Qing Li, Chenghao Pan, Yaomin Dai, Xiaoxiang Zhou, Xiyu Zhu, Hugen Yan, Hai-Hu Wen

Abstract: The pressure-induced color change in the nitrogen-doped lutetium hydride has triggered extensive discussions about the underlying physics. Here, we study the optical response of LuH$_{2 \pm x}$N$_{y}$ in a broad frequency range at ambient pressure and its evolution with pressure in the visible spectral range. The broad-band optical spectra at ambient pressure reveal a Drude component associated wi… ▽ More The pressure-induced color change in the nitrogen-doped lutetium hydride has triggered extensive discussions about the underlying physics. Here, we study the optical response of LuH$_{2 \pm x}$N$_{y}$ in a broad frequency range at ambient pressure and its evolution with pressure in the visible spectral range. The broad-band optical spectra at ambient pressure reveal a Drude component associated with intra-band electronic transitions and two Lorentz components (L1 and L2) arising from inter-band electronic transitions. The application of pressure causes a spectral weight transfer from L1 to the Drude component, leading to a blue shift of the plasma edge in the reflectivity spectrum alongside a reduction of the high-frequency reflectivity. Our results suggest that the pressure-induced color change in LuH$_{2 \pm x}$N$_{y}$ is closely related to the transformation between intra- and inter-band electronic transitions, providing new insights into the mechanism of the pressure-induced color change in LuH$_{2 \pm x}$N$_{y}$. △ Less

Submitted 30 January, 2024; v1 submitted 10 May, 2023; originally announced May 2023.

Comments: 20 pages, 4 figures. Comments are welcome and appreciated

Journal ref: Sci. China Phys. Mech. Astron. 67, 227411 (2024)

The discovery of three-dimensional Van Hove singularity

Authors: Wenbin Wu, Zeping Shi, Mykhaylo Ozerov, Yuhan Du, Yuxiang Wang, Xiao-Sheng Ni, Xianghao Meng, Xiangyu Jiang, Guangyi Wang, Congming Hao, Xinyi Wang, Pengcheng Zhang, Chunhui Pan, Haifeng Pan, Zhenrong Sun, Run Yang, Yang Xu, Yusheng Hou, Zhongbo Yan, Cheng Zhang, Hai-Zhou Lu, Junhao Chu, Xiang Yuan

Abstract: Arising from the extreme/saddle point in electronic bands, Van Hove singularity (VHS) manifests divergent density of states (DOS) and induces various new states of matter such as unconventional superconductivity. VHS is believed to exist in one and two dimensions, but rarely found in three dimension (3D). Here, we report the discovery of 3D VHS in a topological magnet EuCd2As2 by magneto-infrared… ▽ More Arising from the extreme/saddle point in electronic bands, Van Hove singularity (VHS) manifests divergent density of states (DOS) and induces various new states of matter such as unconventional superconductivity. VHS is believed to exist in one and two dimensions, but rarely found in three dimension (3D). Here, we report the discovery of 3D VHS in a topological magnet EuCd2As2 by magneto-infrared spectroscopy. External magnetic fields effectively control the exchange interaction in EuCd2As2, and shift 3D Weyl bands continuously, leading to the modification of Fermi velocity and energy dispersion. Above the critical field, the 3D VHS forms and is evidenced by the abrupt emergence of inter-band transitions, which can be quantitatively described by the minimal model of Weyl semimetals. Three additional optical transitions are further predicted theoretically and verified in magneto-near-infrared spectra. Our results pave the way to exploring VHS in 3D systems and uncovering the coordination between electronic correlation and the topological phase. △ Less

Submitted 13 March, 2024; v1 submitted 14 April, 2023; originally announced April 2023.

Journal ref: Nature Communications 15.1 (2024): 2313

Machine learning guided discovery of superconducting calcium borocarbides

Authors: Chao Zhang, Hui Tang, Chen Pan, Hong Jiang, Huai-Jun Sun, Kai-Ming Ho, Cai-Zhuang Wang

Abstract: Pursuit of superconductivity in light-element systems at ambient pressure is of great experimental and theoretical interest. In this work, we combine a machine learning (ML) method with first-principles calculations to efficiently search for the energetically favorable ternary Ca-B-C compounds. Three new layered borocarbides (stable CaBC5 and metastable Ca2BC11 and CaB3C3) are predicted to be phon… ▽ More Pursuit of superconductivity in light-element systems at ambient pressure is of great experimental and theoretical interest. In this work, we combine a machine learning (ML) method with first-principles calculations to efficiently search for the energetically favorable ternary Ca-B-C compounds. Three new layered borocarbides (stable CaBC5 and metastable Ca2BC11 and CaB3C3) are predicted to be phonon-mediated superconductors at ambient pressure. The hexagonal CaB3C3 possesses the highest Tc of 26.05 K among the three compounds. The σしぐま-bonging bands around the Fermi level account for the large electron-phonon coupling (λらむだ = 0.980) of hexagonal CaB3C3. The ML-guided approach opens up a way for greatly accelerating the discovery of new high-Tc superconductors. △ Less

Submitted 16 March, 2023; originally announced March 2023.

Cascadable in-memory computing based on symmetric writing and read out

Authors: Lizheng Wang, Junlin Xiong, Bin Cheng, Yudi Dai, Fuyi Wang, Chen Pan, Tianjun Cao, Xiaowei Liu, Pengfei Wang, Moyu Chen, Shengnan Yan, Zenglin Liu, Jingjing Xiao, Xianghan Xu, Zhenlin Wang, Youguo Shi, Sang-Wook Cheong, Haijun Zhang, Shi-Jun Liang, Feng Miao

Abstract: The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anis… ▽ More The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe3GeTe2 and WTe2. We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved by employing unconventional charge to z-spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z-spin to charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing. △ Less

Submitted 12 November, 2022; originally announced November 2022.

Comments: Accepted by Science Advances

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential

Authors: Madisen Holbrook, Yuxuan Chen, Hyunsue Kim, Lisa Frammolino, Mengke Liu, Chi-Ruei Pan, Mei-Yin Chou, Chengdong Zhang, Chih-Kang Shih

Abstract: The ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. However, the traditional approach to creating a heterojunction by direct growth of a heterostructure of two different materials constrains the available band offsets, and it is still unclear if large built-in potentials are attainable… ▽ More The ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. However, the traditional approach to creating a heterojunction by direct growth of a heterostructure of two different materials constrains the available band offsets, and it is still unclear if large built-in potentials are attainable for 2D materials. The electronic properties of atomically thin semiconducting transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and quasiparticle band gap depend strongly on the proximal environment. Recent studies have shown that this effect can be harnessed to engineer the lateral band profile of monolayer TMDs to create a heterojunction. Here we demonstrate the synthesis of a nanoscale lateral heterojunction in monolayer MoSe2 by intercalating Se at the interface of a hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe2 monolayer to create a large built-in potential of 0.83 eV. We spatially resolve the MoSe2 band profile and work function using scanning tunneling spectroscopy to map out the nanoscale depletion region. The Se intercalation also modifies the dielectric environment, influencing the local band gap renormalization and increasing the MoSe2 band gap by ~0.26 eV. This work illustrates that environmental proximity engineering provides a robust method to indirectly manipulate the band profile of 2D materials outside the limits of their intrinsic properties, providing avenues for future device design. △ Less

Submitted 9 August, 2022; originally announced August 2022.

Comments: 22 pages, 4 figures, submitted for publications at ACS Nano

Chirality-Induced Noncollinear Magnetization and Asymmetric Domain-Wall Propagation in Hydrogenated CoPd Thin Films

Authors: Wei-Hsiang Wang, Ching-Yang Pan, Chak-Ming Liu, Wen-Chin Lin, Pei-hsun Jiang

Abstract: Array-patterned CoPd-based heterostructures are created through e-beam lithography and plasma pretreatment that induces oxidation with depth gradient in the CoPd alloy films, breaking the central symmetry of the structure. Effects on the magnetic properties of the follow-up hydrogenation of the thin film are observed via magneto-optic Kerr effect microscopy. The system exhibits strong vertical and… ▽ More Array-patterned CoPd-based heterostructures are created through e-beam lithography and plasma pretreatment that induces oxidation with depth gradient in the CoPd alloy films, breaking the central symmetry of the structure. Effects on the magnetic properties of the follow-up hydrogenation of the thin film are observed via magneto-optic Kerr effect microscopy. The system exhibits strong vertical and lateral antiferromagnetic coupling in the perpendicular component between the areas with and without plasma pretreatment, and asymmetric domain-wall propagation in the plasma-pretreated areas during magnetization reversal. These phenomenon exhibit evident magnetic chirality and can be interpreted with the Ruderman-Kittel-Kasuya-Yosida coupling and the Dzyaloshinskii-Moriya interaction (DMI). The sample processing demonstrated in this study allows easy incorporation of lithography techniques that can define areas with or without DMI to create intricate magnetic patterns on the sample, which provides an avenue towards more sophisticate control of canted spin textures in future spintronic devices. △ Less

Submitted 26 April, 2022; originally announced April 2022.

Comments: Supplementary materials available at https://pubs.acs.org/doi/10.1021/acsami.1c23276#notes-1

Quantitative determination of interlayer electronic coupling at various critical points in bilayer MoS2

Authors: Wei-Ting Hsu, Jiamin Quan, Chi-Ruei Pan, Peng-Jen Chen, Mei-Yin Chou, Wen-Hao Chang, Allan H MacDonald, Xiaoqin Li, Jung-Fu Lin, Chih-Kang Shih

Abstract: Tailoring interlayer coupling has emerged as a powerful tool to tune the electronic structure of van der Waals (vdW) bilayers. One example is the usage of the moire pattern to create controllable two-dimensional electronic superlattices through the configurational dependence of interlayer electronic couplings. This approach has led to some remarkable discoveries in twisted graphene bilayers, and t… ▽ More Tailoring interlayer coupling has emerged as a powerful tool to tune the electronic structure of van der Waals (vdW) bilayers. One example is the usage of the moire pattern to create controllable two-dimensional electronic superlattices through the configurational dependence of interlayer electronic couplings. This approach has led to some remarkable discoveries in twisted graphene bilayers, and transition metal dichalcogenide (TMD) homo- and hetero-bilayers. However, a largely unexplored factor is the interlayer distance, d, which can impact the interlayer coupling strength exponentially. In this letter, we quantitatively determine the coupling strengths as a function of interlayer spacing at various critical points of the Brillouin zone in bilayer MoS2. The exponential dependence of the coupling parameter on the gap distance is demonstrated. Most significantly, we achieved a 280% enhancement of K-valley coupling strength with an 8% reduction of the vdW gap, pointing to a new strategy in designing a novel electronic system in vdW bilayers. △ Less

Submitted 30 March, 2022; originally announced March 2022.

Phase transition and enhanced hardness of LaB4 under pressure

Authors: Chen Pan, Sheng-Yan Wang, Hui Tang, Hong-Yun Wu, Hong Jiang, Yue-Hua Su, Chao Zhang

Abstract: The crystalline structures of lanthanum tetraboride, LaB4, under pressure are investigated using a genetic algorithm method coupled with first-principles calculations. We find two low-enthalpy phases for LaB4 as the thermodynamic ground state up to 200 GPa: a phase previously observed in experiments (P4/mbm) and a novel orthorhombic phase (Pnma-I). The P4/mbm phase transforms to the Pnma-I phase a… ▽ More The crystalline structures of lanthanum tetraboride, LaB4, under pressure are investigated using a genetic algorithm method coupled with first-principles calculations. We find two low-enthalpy phases for LaB4 as the thermodynamic ground state up to 200 GPa: a phase previously observed in experiments (P4/mbm) and a novel orthorhombic phase (Pnma-I). The P4/mbm phase transforms to the Pnma-I phase at around 106 GPa, accompanied by breakage of the B-octahedron. The P4/mbm phase of LaB4 exhibits a high hardness (30.5 GPa) at ambient conditions, which is comparable to that of the hard material B4C. The hardness of the two low-enthalpy phases increases with pressure. The electronic band structures shows that all of the competitive phases (two stable and two metastable phases) are metallic. Phonon calculations shows the P4/mbm and Pnma-I phases are thermodynamically stable in their respective pressure ranges. This elucidation of the phase transition behavior and hardness of LaB4 provides new knowledge on the interesting high-pressure behaviors of the rare-earth metal borides. △ Less

Submitted 30 November, 2021; originally announced December 2021.

Dynamic Behaviors and Training Effects in TiN/Ti/HfO$_x$/TiN Nanolayered Memristors with Controllable Quantized Conductance States: Implications for Quantum and Neuromorphic Computing Devices

Authors: Min-Hsuan Peng, Ching-Yang Pan, Hao-Xuan Zheng, Ting-Chang Chang, Pei-hsun Jiang

Abstract: Controllable quantized conductance states of TiN/Ti/HfO$_x$/TiN memristors are realized with great precision through a pulse-mode reset procedure, assisted with analytical differentiation of the condition of the set procedure, which involves critical monitoring of the measured bias voltage. An intriguing training effect that leads to faster switching of the states is also observed during the opera… ▽ More Controllable quantized conductance states of TiN/Ti/HfO$_x$/TiN memristors are realized with great precision through a pulse-mode reset procedure, assisted with analytical differentiation of the condition of the set procedure, which involves critical monitoring of the measured bias voltage. An intriguing training effect that leads to faster switching of the states is also observed during the operation. Detailed analyses on the low- and high-resistance states under different compliance currents reveal a complete picture of the structural evolution and dynamic behaviors of the conductive filament in the HfO$_x$ layer. This study provides a closer inspection on the quantum-level manipulation of nanoscale atomic configurations in the memristors, which helps to develop essential knowledge about the design and fabrication of the future memristor-based quantum devices and neuromorphic computing devices. △ Less

Submitted 22 September, 2021; originally announced September 2021.

Comments: Accepted by ACS Applied Nano Materials

Scalable massively parallel computing using continuous-time data representation in nanoscale crossbar array

Authors: Cong Wang, Shi-Jun Liang, Chen-Yu Wang, Zai-Zheng Yang, Yingmeng Ge, Chen Pan, Xi Shen, Wei Wei, Yichen Zhao, Zaichen Zhang, Bin Cheng, Chuan Zhang, Feng Miao

Abstract: The growth of connected intelligent devices in the Internet of Things has created a pressing need for real-time processing and understanding of large volumes of analogue data. The difficulty in boosting the computing speed renders digital computing unable to meet the demand for processing analogue information that is intrinsically continuous in magnitude and time. By utilizing a continuous data re… ▽ More The growth of connected intelligent devices in the Internet of Things has created a pressing need for real-time processing and understanding of large volumes of analogue data. The difficulty in boosting the computing speed renders digital computing unable to meet the demand for processing analogue information that is intrinsically continuous in magnitude and time. By utilizing a continuous data representation in a nanoscale crossbar array, parallel computing can be implemented for the direct processing of analogue information in real time. Here, we propose a scalable massively parallel computing scheme by exploiting a continuous-time data representation and frequency multiplexing in a nanoscale crossbar array. This computing scheme enables the parallel reading of stored data and the one-shot operation of matrix-matrix multiplications in the crossbar array. Furthermore, we achieve the one-shot recognition of 16 letter images based on two physically interconnected crossbar arrays and demonstrate that the processing and modulation of analogue information can be simultaneously performed in a memristive crossbar array. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Comments: 18 pages, 4 figures

Journal ref: Nature Nanotechnology (2021)

Plasmon-Exciton Coupling Effect on Plasmon Damping

Authors: Lulu Ye, Weidong Zhang, Aiqin Hu, Hai Lin, Jinglin Tang, Yunkun Wang, Chenxinyu Pan, Pan Wang, Xin Guo, Limin Tong, Yunan Gao, Qihuang Gong, Guowei Lu

Abstract: Plasmon decay via the surface or interface is a critical process for practical energy conversion and plasmonic catalysis. However, the relationship between plasmon damping and the coupling between the plasmon and 2D materials is still unclear. The spectral splitting due to plasmon-exciton interaction impedes the conventional single-particle method to evaluate the plasmon damping rate by the spectr… ▽ More Plasmon decay via the surface or interface is a critical process for practical energy conversion and plasmonic catalysis. However, the relationship between plasmon damping and the coupling between the plasmon and 2D materials is still unclear. The spectral splitting due to plasmon-exciton interaction impedes the conventional single-particle method to evaluate the plasmon damping rate by the spectral linewidth directly. Here, we investigated the interaction between a single gold nanorod (GNR) and 2D materials using the single-particle spectroscopy method assisted with in situ nanomanipulation technique by comparing scattering intensity and linewidth together. Our approach allows us to indisputably identify that the plasmon-exciton coupling in the GNR-WSe2 hybrid would induce plasmon damping. We can also isolate the contribution between the charge transfer channel and resonant energy transfer channel for the plasmon decay in the GNR-graphene hybrid by comparing that with thin hBN layers as an intermediate medium to block the charge transfer. We find out that the contact layer between the GNR and 2D materials contributes most of the interfacial plasmon damping. These findings contribute to a deep understanding of interfacial excitonic effects on the plasmon and 2D materials hybrid. △ Less

Submitted 17 July, 2021; originally announced July 2021.

Temperature-sensitive spatial distribution of defects in PdSe2 flakes

Authors: Xiaowei Liu, Yaojia Wang, Qiqi Guo, Shijun Liang, Tao Xu, Bo Liu, Jiabin Qiao, Shengqiang Lai, Junwen Zeng, Song Hao, Chenyi Gu, Tianjun Cao, Chenyu Wang, Yu Wang, Chen Pan, Guangxu Su, Yuefeng Nie, Xiangang Wan, Litao Sun, Zhenlin Wang, Lin He, Bin Cheng, Feng Miao

Abstract: Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microsco… ▽ More Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microscopy (STM). We observe that the spatial distribution of Se vacancies in PdSe2 flakes exhibits a strong anisotropic characteristic at 80 K, and that this orientation-dependent feature is weakened when temperature is raised. Moreover, we carry out transport measurements on PdSe2 thin flakes and show that the anisotropic features of carrier mobility and phase coherent length are also sensitive to temperature. Combining with theoretical analysis, we conclude that temperature-driven defect spatial redistribution could interpret the temperature-sensitive electrical transport behaviors in PdSe2 thin flakes. Our work highlights that engineering spatial distribution of defects in the van der Waals materials, which has been overlooked before, may open up a new avenue to tailor the physical properties of materials and explore new device functionalities. △ Less

Submitted 14 April, 2021; originally announced April 2021.

Comments: 24 pages, 12 figures, accepted by Physical Review Materials

Critical role of parallel momentum in quantum well state couplings in multi-stacked nanofilms: an angle resolved photoemission study

Authors: Woojoo Lee, Chi-Ruei Pan, Hyoungdo Nam, Mei-Yin Chou, Chih-Kang Shih

Abstract: We use angle resolved photoemission spectroscopy (ARPES) to investigate the coupling of electron quantum well states (QWS) in epitaxial thin Pb and Ag films. More specifically, we investigate the Ag/Si, Pb/Si, and Pb/Ag/Si systems. We found that the parallel momentum plays a very profound role determining how two adjacent quantum wells are coupled electronically across the interface. We revealed t… ▽ More We use angle resolved photoemission spectroscopy (ARPES) to investigate the coupling of electron quantum well states (QWS) in epitaxial thin Pb and Ag films. More specifically, we investigate the Ag/Si, Pb/Si, and Pb/Ag/Si systems. We found that the parallel momentum plays a very profound role determining how two adjacent quantum wells are coupled electronically across the interface. We revealed that in the Pb/Ag bimetallic system, there exist two distinctly different regimes in the energy versus momentum (E vs. k) space. In one regime the electronic states in Ag and Pb are strongly coupled resulting in a new set of quantum well states for the bi-metallic system. In the other regime the electronic states in individual metallic layers are retained in their respective regions, as if they are totally decoupled. This result is corroborated by calculations using density functional theory. We further unravel the underlying mechanism associated with the electron refraction and total internal reflection across the interface. △ Less

Submitted 13 October, 2020; originally announced October 2020.

Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO

Authors: Hui Zhang, Madisen Holbrook, Fei Cheng, Hyoungdo Nam, Mengke Liu, Chi-Ruei Pan, Damien West, Shengbai Zhang, Mei-Yin Chou, Chih-Kang Shih

Abstract: The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), altho… ▽ More The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are conveniently grown on Si(111) wafers. Using scanning tunneling microscopy and spectroscopy (STM/S), the honeycomb BeO lattice constant is determined to be 2.65 angstrom with an insulating band gap of 6 eV. Our low energy electron diffraction (LEED) measurements indicate that the h-BeO forms a continuous layer with good crystallinity at the millimeter scale. Moiré pattern analysis shows the BeO honeycomb structure maintains long range phase coherence in atomic registry even across Ag steps. We find that the interaction between the h-BeO layer and the Ag(111) substrate is weak by using STS and complimentary density functional theory calculations. We not only demonstrate the feasibility of growing h-BeO monolayers by MBE, but also illustrate that the large-scale growth, weak substrate interactions, and long-range crystallinity make h-BeO an attractive candidate for future technological applications. More significantly, the ability to create a stable single crystalline atomic sheet without a bulk layered counterpart is an intriguing approach to tailoring novel 2D electronic materials. △ Less

Submitted 20 August, 2020; originally announced August 2020.

Comments: 25 pages, 7 figures, submitted to ACS Nano, equal contribution by Hui Zhang and Madisen Holbrook

Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor

Authors: Chen-Yu Wang, Shi-Jun Liang, Shuang Wang, Pengfei Wang, Zhuan Li, Zhongrui Wang, Anyuan Gao, Chen Pan, Chuan Liu, Jian Liu, Huafeng Yang, Xiaowei Liu, Wenhao Song, Cong Wang, Xiaomu Wang, Kunji Chen, Zhenlin Wang, Kenji Watanabe, Takashi Taniguchi, J. Joshua Yang, Feng Miao

Abstract: Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heteros… ▽ More Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heterostructures. The sensor emulates not only the neurobiological functionalities of bipolar cells and photoreceptors but also the unique synaptic connectivity between bipolar cells and photoreceptors. By tuning gate voltage for each pixel, we achieve reconfigurable vision sensor for simultaneously image sensing and processing. Furthermore, our prototype vision sensor itself can be trained to classify the input images, via updating the gate voltages applied individually to each pixel in the sensor. Our work indicates that vdW vertical heterostructures offer a promising platform for the development of neural network vision sensor. △ Less

Submitted 25 March, 2020; v1 submitted 4 March, 2020; originally announced March 2020.

Comments: 20 pages, 4 figures

Journal ref: Science Advances 6, eaba6173 (2020)

Increased Curie temperature and enhanced perpendicular magneto anisotropy of Cr2Ge2Te6/NiO heterostructure

Authors: H. Idzuchi, A. E. Llacsahuanga Allcca, X. C. Pan, K. Tanigaki, Y. P. Chen

Abstract: Magnetism in two-dimensional van der Waals materials has received significant attention recently. The Curie temperature reported for those materials, however, has been so far remained relatively low. Here, we measure magneto-optical Kerr effects (MOKE) under perpendicular magnetic field for van der Waals ferromagnet Cr2Ge2Te6 as well as its heterostructure with antiferromagnetic insulator NiO. We… ▽ More Magnetism in two-dimensional van der Waals materials has received significant attention recently. The Curie temperature reported for those materials, however, has been so far remained relatively low. Here, we measure magneto-optical Kerr effects (MOKE) under perpendicular magnetic field for van der Waals ferromagnet Cr2Ge2Te6 as well as its heterostructure with antiferromagnetic insulator NiO. We observe a notable increase in both Curie temperature and magnetic perpendicular anisotropy in Cr2Ge2Te6/NiO heterostructures compared to those in Cr2Ge2Te6. Measurements on the same exfoliated Cr2Ge2Te6 flake (on a SiO2/Si substrate) before and after depositing NiO show that the hysteresis loop can change into a square shape with larger coercive field for Cr2Ge2Te6/NiO. The maximum Curie temperature (TC) observed for Cr2Ge2Te6/NiO reaches ~120 K, is nearly twice the maximum TC ~ 60 K reported for Cr2Ge2Te6 alone. Both enhanced perpendicular anisotropy and increased Curie temperature are observed for Cr2Ge2Te6 flakes with a variety of thicknesses ranging from ~5 nm to ~200 nm. The results indicate that magnetic properties of two-dimensional van der Waals magnets can be engineered and controlled by using the heterostructure interface with other materials. △ Less

Submitted 6 December, 2019; originally announced December 2019.

Journal ref: Appl. Phys. Lett. 115, 232403 (2019)

Role of ferroelectric polarization during growth of highly strained ferroelectrics revealed by in-situ x-ray diffraction

Authors: Rui Liu, Jeffrey G. Ulbrandt, Hsiang-Chun Hsing, Anna Gura, Benjamin Bein, Alec Sun, Charles Pan, Giulia Bertino, Amanda Lai, Kaize Cheng, Eli Doyle, Kenneth Evans-Lutterodt, Randall L. Headrick, Matthew Dawber

Abstract: Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical prope… ▽ More Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. We have studied this effect in detail by focusing on the properties of BaTiO$_{3}$ thin films grown on very thin layers of PbTiO$_{3}$ using a combination of x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. Our research motivates the concept of polarization engineering during the growth process as a new and complementary approach to strain engineering. △ Less

Submitted 26 September, 2019; originally announced September 2019.

S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Authors: Miao Wang, Chengyu Wang, Chenchen Wu, Qiao Li, Chen Pan, Cong Wang, Shi-Jun Liang, Feng Miao

Abstract: Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we… ▽ More Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we experimentally identify that semiconducting transition metal dichalcogenides (TMDs) can host a bipolar S-type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, we demonstrate the potential applications of TMDs based S-type NDR device in signal processing and neuromorphic electronics. △ Less

Submitted 21 January, 2019; originally announced January 2019.

Comments: To be appear in Advanced Electronic Materials, 9 pages 4 figures

Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials

Authors: Junwen Zeng, Xin He, Shi-Jun Liang, Erfu Liu, Yuanhui Sun, Chen Pan, Yu Wang, Tianjun Cao, Xiaowei Liu, Chengyu Wang, Lili Zhang, Shengnan Yan, Guangxu Su, Zhenlin Wang, Kenji Watanabe, Takashi Taniguchi, David J. Singh, Lijun Zhang, Feng Miao

Abstract: Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and theoretical work points to large improvements in electronic properties. However, realization of the electronic benefits in practical materials has been elusive experimentally. A key challenge is that experimental identifica… ▽ More Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and theoretical work points to large improvements in electronic properties. However, realization of the electronic benefits in practical materials has been elusive experimentally. A key challenge is that experimental identification of the quantum confinement length, below which the thermoelectric power factor is significantly enhanced, remains elusive due to lack of simultaneous control of size and carrier density. Here we investigate gate tunable and temperature-dependent thermoelectric transport in $γがんま$ phase indium selenide ($γがんま$ InSe, n type semiconductor) samples with thickness varying from 7 to 29 nm. This allows us to properly map out dimension and doping space. Combining theoretical and experimental studies, we reveal that the sharper pre-edge of the conduction-band density of states arising from quantum confinement gives rise to an enhancement of the Seebeck coefficient and the power factor in the thinner InSe samples. Most importantly, we experimentally identify the role of the competition between quantum confinement length and thermal de Broglie wavelength in the enhancement of power factor. Our results provide an important and general experimental guideline for optimizing the power factor and improving the thermoelectric performance of two-dimensional layered semiconductors. △ Less

Submitted 28 November, 2018; originally announced November 2018.

Comments: 26 page, 5 figures

Crack Path Selection in Orientationally Ordered Composites

Authors: Ataollah Mesgarnejad, Chunzhou Pan, Randall M. Erb, Sandra J. Shefelbine, Alain Karma

Abstract: While cracks in isotropic homogeneous materials propagate straight, perpendicularly to the tensile axis, cracks in natural and synthetic composites deflect from a straight path, often increasing the toughness of the material. Here we combine experiments and simulations to identify materials properties that predict whether cracks propagate straight or kink on a macroscale larger than the composite… ▽ More While cracks in isotropic homogeneous materials propagate straight, perpendicularly to the tensile axis, cracks in natural and synthetic composites deflect from a straight path, often increasing the toughness of the material. Here we combine experiments and simulations to identify materials properties that predict whether cracks propagate straight or kink on a macroscale larger than the composite microstructure. Those properties include the anisotropy of the fracture energy, which we vary several folds by increasing the volume fraction of orientationally ordered alumina platelets inside a polymer matrix, and a microstructure-dependent process zone size that is found to modulate the additional stabilizing or destabilizing effect of the non-singular stress acting parallel to the crack. Those properties predict the existence of an anisotropy threshold for crack kinking and explain the surprisingly strong dependence of this threshold on sample geometry and load distribution. △ Less

Submitted 17 December, 2019; v1 submitted 31 October, 2018; originally announced November 2018.

MSC Class: 74Rxx

Journal ref: Phys. Rev. E 102, 013004 (2020)

Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor

Authors: Yu Wang, Erfu Liu, Anyuan Gao, Tianjun Cao, Mingsheng Long, Chen Pan, Lili Zhang, Junwen Zeng, Chenyu Wang, Weida Hu, Shi-Jun Liang, Feng Miao

Abstract: Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterost… ▽ More Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterostructures. Here we report the observation of the NPC in ReS2/h-BN/MoS2 vdW heterostructures-based floating gate phototransistor. The fabricated devices exhibit excellent performance of nonvolatile memory without light illumination. More interestingly, we observe a gate-tunable transition between the PPC and the NPC under the light illumination. The observed NPC phenomenon can be attributed to the charge transfer between floating gate and conduction channel. Furthermore, we show that the control of NPC through light intensity is promising in realization of light-tunable multi-bit memory devices. Our results may enable potential applications in multifunctional memories and optoelectronic devices. △ Less

Submitted 18 August, 2018; originally announced August 2018.

Comments: 21 pages, 4 figures, accepted by ACS Nano

Quantum Wires and Waveguides Formed in Graphene by Strain

Authors: Y. Wu, D. Zhai, C. Pan, B. Cheng, T. Taniguchi, K. Watanabe, N. Sandler, M. Bockrath

Abstract: Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up approaches are limited in size to a few nanometers. Fortunately, its mechanical flexibility raises the possibility of using strain to alter graphene's properties a… ▽ More Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up approaches are limited in size to a few nanometers. Fortunately, its mechanical flexibility raises the possibility of using strain to alter graphene's properties and create novel straintronic devices. Here, we report transport studies of nanowires created by linearly-shaped strained regions resulting from individual folds formed by layer transfer onto hexagonal boron nitride. Conductance measurements across the folds reveal Coulomb blockade signatures, indicating confined charges within these structures, which act as quantum dots. Along folds, we observe sharp features in traverse resistivity measurements, attributed to an amplification of the dot conductance modulations by a resistance bridge incorporating the device. Our data indicates ballistic transport up to ~1 um along the folds. Calculations using the Dirac model including strain are consistent with measured bound state energies and predict the existence of valley-polarized currents. Our results show that graphene folds can act as straintronic quantum wires. △ Less

Submitted 31 March, 2018; originally announced April 2018.

Journal ref: Nano Lett., 2018, 18, 64

Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures

Authors: Shi Che, Petr Stepanov, Supeng Ge, Yongjin Lee, Kevin Myhro, Yanmeng Shi, Ruoyu Chen, Ziqi Pi, Cheng Pan, Bin Cheng, Takashi Taniguchi, Kenji Watanabe, Marc Bockrath, Yafis Barlas, Roger Lake, Chun Ning Lau

Abstract: The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depend… ▽ More The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K' valley in TLG's lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering. △ Less

Submitted 9 March, 2018; originally announced March 2018.

Journal ref: Phys. Rev. Lett. 125, 246401 (2020)

Gate-Induced Interfacial Superconductivity in 1T-SnSe2

Authors: Junwen Zeng, Erfu Liu, Yajun Fu, Zhuoyu Chen, Chen Pan, Chenyu Wang, Miao Wang, Yaojia Wang, Kang Xu, Songhua Cai, Xingxu Yan, Yu Wang, Xiaowei Liu, Peng Wang, Shi-Jun Liang, Yi Cui, Harold Y. Hwang, Hongtao Yuan, Feng Miao

Abstract: Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides a… ▽ More Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc around 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on 1) a 2D Tinkham description of the angle-dependent upper critical field, 2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity. △ Less

Submitted 2 February, 2018; originally announced February 2018.

Comments: 18 pages, 4 figures, accepted by Nano Letters

Analog Circuit Applications based on Ambipolar Graphene/MoTe2 Vertical Transistors

Authors: Chen Pan, Yajun Fu, Jiaxin Wang, Junwen Zeng, Guangxu Su, Mingsheng Long, Erfu Liu, Chenyu Wang, Anyuan Gao, Miao Wang, Yu Wang, Zhenlin Wang, Shi-Jun Liang, Ru Huang, Feng Miao

Abstract: The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology. However, low on/off current ratio caused by the… ▽ More The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology. However, low on/off current ratio caused by the semimetal nature of graphene has severely hindered its practical applications. Here we report a graphene/MoTe2 van der Waals (vdW) vertical transistor with V-shaped ambipolar field effect transfer characteristics to overcome this challenge. Investigations on temperature dependence of transport properties reveal that gate tunable asymmetric barriers of the devices are account for the ambipolar behaviors. Furthermore, to demonstrate the analog circuit applications of such vdW vertical transistors, we successfully realized output polarity controllable (OPC) amplifier and frequency doubler. These results enable vdW heterojunction based electronic devices to open up new possibilities for wide perspective in telecommunication field. △ Less

Submitted 5 January, 2018; originally announced January 2018.

Comments: To appear on Advanced Electronics Materials; 26 pages, 5 figures, 7 supplementary figures

Journal ref: Advanced Electronics Materials 1700662 1-7 (2018)

Robust memristors based on layered two-dimensional materials

Authors: Miao Wang, Songhua Cai, Chen Pan, Chenyu Wang, Xiaojuan Lian, Ye Zhuo, Kang Xu, Tianjun Cao, Xiaoqing Pan, Baigeng Wang, Shijun Liang, J. Joshua Yang, Peng Wang, Feng Miao

Abstract: Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining superior properties of each component, such heterostructure also provides possible solutions to address various challenges of the electronic devices, especially those with vertical multilayered structures. Here, we report… ▽ More Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining superior properties of each component, such heterostructure also provides possible solutions to address various challenges of the electronic devices, especially those with vertical multilayered structures. Here, we report the realization of robust memristors for the first time based on van der Waals heterostructure of fully layered 2D materials (graphene/MoS2-xOx/graphene) and demonstrate a good thermal stability lacking in traditional memristors. Such devices have shown excellent switching performance with endurance up to 107 and a record-high operating temperature up to 340oC. By combining in situ high-resolution TEM and STEM studies, we have shown that the MoS2-xOx switching layer, together with the graphene electrodes and their atomically sharp interfaces, are responsible for the observed thermal stability at elevated temperatures. A well-defined conduction channel and a switching mechanism based on the migration of oxygen ions were also revealed. In addition, the fully layered 2D materials offer a good mechanical flexibility for flexible electronic applications, manifested by our experimental demonstration of a good endurance against over 1000 bending cycles. Our results showcase a general and encouraging pathway toward engineering desired device properties by using 2D van der Waals heterostructures. △ Less

Submitted 1 January, 2018; originally announced January 2018.

Comments: To appear on Nature Electronics; 31 pages, 6 figures, 8 supplementary figures

Journal ref: Nature Electronics 1, 130 (2018)

Gated Tuned Superconductivity and Phonon Softening in Mono- and Bilayer MoS$_2$

Authors: Yajun Fu, Erfu Liu, Hongtao Yuan, Peizhe Tang, Biao Lian, Gang Xu, Junwen Zeng, Zhuoyu Chen, Yaojia Wang, Wei Zhou, Kang Xu, Anyuan Gao, Chen Pan, Miao Wang, Baigeng Wang, Shou-Cheng Zhang, Yi Cui, Harold Y. Hwang, Feng Miao

Abstract: Superconductors at the atomic two-dimensional (2D) limit are the focus of an enduring fascination in the condensed matter community. This is because, with reduced dimensions, the effects of disorders, fluctuations, and correlations in superconductors become particularly prominent at the atomic 2D limit; thus such superconductors provide opportunities to tackle tough theoretical and experimental ch… ▽ More Superconductors at the atomic two-dimensional (2D) limit are the focus of an enduring fascination in the condensed matter community. This is because, with reduced dimensions, the effects of disorders, fluctuations, and correlations in superconductors become particularly prominent at the atomic 2D limit; thus such superconductors provide opportunities to tackle tough theoretical and experimental challenges. Here, based on the observation of ultrathin 2D superconductivity in mono- and bilayer molybdenum disulfide (MoS$_2$) with electric-double-layer (EDL) gating, we found that the critical sheet carrier density required to achieve superconductivity in a monolayer MoS$_2$ flake can be as low as 0.55*10$^{14}$cm$^{-2}$, which is much lower than those values in the bilayer and thicker cases in previous report and also our own observations. Further comparison of the phonon dispersion obtained by ab initio calculations indicated that the phonon softening of the acoustic modes around the M point plays a key role in the gate-induced superconductivity within the Bardeen-Cooper Schrieffer (BCS) theory framework. This result might help enrich the understanding of 2D superconductivity with EDL gating. △ Less

Submitted 16 October, 2017; v1 submitted 15 October, 2017; originally announced October 2017.

Journal ref: npj Quantum Materials 2, Article number: 52 (2017)

Site preference and diffusion behaviors of H influenced by the implanted-He in 3C-\b{eta} SiC

Authors: Sen Wang, H. Y. He, R. Ding, B. C. Pan, J. L. Chen

Abstract: SiC materials are potential plasma facing materials in fusion reactors. In this study, site preference and diffusion behaviors of H in pure 3C-\b{eta} SiC and in He-implanted 3C-\b{eta} SiC are investigated, on the basis of the first-principles calculations. We find that the most stable sites for H in pure 3C-\b{eta}SiC is the anti-bond site of C (ABc) in Si-C, while it becomes the bond-center (BC… ▽ More SiC materials are potential plasma facing materials in fusion reactors. In this study, site preference and diffusion behaviors of H in pure 3C-\b{eta} SiC and in He-implanted 3C-\b{eta} SiC are investigated, on the basis of the first-principles calculations. We find that the most stable sites for H in pure 3C-\b{eta}SiC is the anti-bond site of C (ABc) in Si-C, while it becomes the bond-center (BC) site of Si-C bonds in the He-implanted 3C-\b{eta} SiC. Analysis on the electronic structures reveals that such change is attributed to the reduction of hybridization of C-Si bonds induced by He. Moreover, the presence of He strongly affect the vibrational features in the high frequency region, causing a blue shift of 25 cm-1 for C-H stretch mode with H at ABc site and a red shift of 165cm-1 for that at BC site, with respect to that in the pure system. In pure 3C-\b{eta} SiC, H is diffusive with an energy cost of about 0.5 eV, preferring to rotate around the C atom in a Si-C tetrahedron with an energy barrier of just about 0.10 eV. In contrast, in He-implanted 3C-\b{eta} SiC, the energy barriers for H migration goes up to be about 0.95 eV, indicating the implanted-He blocks the diffusive H to some extent. Our calculations also show that the influence of He on H diffusion is effective in a short range, just covering the nearest neighbor. △ Less

Submitted 17 September, 2017; v1 submitted 14 September, 2017; originally announced September 2017.

Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping

Authors: Yajun Fu, Mingsheng Long, Anyuan Gao, Yu Wang, Chen Pan, Xiaowei Liu, Junwen Zeng, Kang Xu, Lili Zhang, Erfu Liu, Weida Hu, Xiaomu Wang, Feng Miao

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which originates from chalcogen vacancies, obtaining intrinsic high-quality p-type semiconducting TMDs has been challenging. Here, we report an experimental approach to… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which originates from chalcogen vacancies, obtaining intrinsic high-quality p-type semiconducting TMDs has been challenging. Here, we report an experimental approach to obtain intrinsic p-type Tungsten (W)-based TMDs by substitutional Ta-doping. The obtained few-layer Ta-doped WSe2 (Ta0.01W0.99Se2) field-effect transistor (FET) devices exhibit competitive p-type performances, including ~10^6 current on/off at room temperature. We also demonstrate high quality van der Waals (vdW) p-n heterojunctions based on Ta0.01W0.99Se2/MoS2 structure, which exhibit nearly ideal diode characteristics (with an ideality factor approaching 1 and a rectification ratio up to 10^5) and excellent photodetecting performance. Our study suggests that substitutional Ta-doping holds great promise to realize intrinsic p-type W-based TMDs for future electronic and photonic applications. △ Less

Submitted 17 July, 2017; originally announced July 2017.

Comments: To appear in Applied Physics Letters; 31 pages, 4 pages, 7 supplementary figures; submitted on May 1st, 2017

Room-temperature high detectivity mid-infrared photodetectors based on black arsenic phosphorus

Authors: Mingsheng Long, Anyuan Gao, Peng Wang, Hui Xia, Claudia Ott, Chen Pan, Yajun Fu, Erfu Liu, Xiaoshuang Chen, Wei Lu, Tom Nilges, Jianbin Xu, Xiaomu Wang, Weida Hu, Feng Miao

Abstract: The mid-infrared (MIR) spectral range, pertaining to important applications such as molecular 'fingerprint' imaging, remote sensing, free space telecommunication and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high cost phot… ▽ More The mid-infrared (MIR) spectral range, pertaining to important applications such as molecular 'fingerprint' imaging, remote sensing, free space telecommunication and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high cost photodetectors requiring cryogenic operation. We report black arsenic-phosphorus-based long wavelength infrared photodetectors with room temperature operation up to 8.2 um, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature specific detectivity higher than 4.9*10^9 Jones was obtained in the 3-5 um range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodector not only exemplify black arsenic-phosphorus as a promising candidate for MIR opto-electronic applications, but also pave the way for a general strategy to suppress 1/f noise in photonic devices. △ Less

Submitted 2 May, 2017; originally announced May 2017.

Comments: To appear in Science Advances; 27 pages, 3 figures, 9 supplementary figures; submitted on Feb. 24th, 2017

Journal ref: Science Advances 3: e1700589 (2017)

Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Authors: Qiang Zhang, Yuxuan Chen, Chendong Zhang, Chi-Ruei Pan, Mei-Yin Chou, Changgan Zeng, Chih-Kang Shih

Abstract: Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic structures of MoSe2 using scanning tunneling microscopy and spectroscopy. Surprisingly, we found that the quasi-particle gap of the MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We… ▽ More Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic structures of MoSe2 using scanning tunneling microscopy and spectroscopy. Surprisingly, we found that the quasi-particle gap of the MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru which causes residual metallic screening from the substrate. The surface of MoSe2 exhibits Moiré pattern that replicates the Moiré pattern of hBN/Ru. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ~ 0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moiré pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude. △ Less

Submitted 6 September, 2016; originally announced September 2016.

Comments: 4 figures, 2 supplementary figures

Tunable plasmonic reflection by bound 1D electron states in a 2D Dirac metal

Authors: Bor-Yuan Jiang, Guangxin Ni, Cheng Pan, Zhe Fei, Bin Cheng, Chun Ning Lau, Marc Bockrath, Dimitri N. Basov, Michael M. Fogler

Abstract: We show that surface plasmons of a two-dimensional Dirac metal such as graphene can be reflected by line-like perturbations hosting one-dimensional electron states. The reflection originates from a strong enhancement of the local optical conductivity caused by optical transitions involving these bound states. We propose that the bound states can be systematically created, controlled, and liquidate… ▽ More We show that surface plasmons of a two-dimensional Dirac metal such as graphene can be reflected by line-like perturbations hosting one-dimensional electron states. The reflection originates from a strong enhancement of the local optical conductivity caused by optical transitions involving these bound states. We propose that the bound states can be systematically created, controlled, and liquidated by an ultranarrow electrostatic gate. Using infrared nanoimaging, we obtain experimental evidence for the locally enhanced conductivity of graphene induced by a carbon nanotube gate, which supports this theoretical concept. △ Less

Submitted 15 June, 2016; v1 submitted 9 February, 2016; originally announced February 2016.

Comments: 14 pages, 12 figures, submitted to PRL

Journal ref: Phys. Rev. Lett. 117, 086801 (2016)

Black Phosphorus-Polymer Composites for Pulsed Lasers

Authors: Haoran Mu, Shenghuang Lin, Zhongchi Wang, Si Xiao, Pengfei Li, Yao Chen, Han Zhang, Haifeng Bao, Shu Ping Lau, Chunxu Pan, Dianyuan Fan, Qiaoliang Bao

Abstract: Black phosphorus is a very promising material for telecommunication due to its direct bandgap and strong resonant absorption in near-infrared wavelength range. However, ultrafast nonlinear photonic applications relying on the ultrafast photo-carrier dynamics as well as optical nonlinearity in black phosphorus remain unexplored. In this work, we investigate nonlinear optical properties of solution… ▽ More Black phosphorus is a very promising material for telecommunication due to its direct bandgap and strong resonant absorption in near-infrared wavelength range. However, ultrafast nonlinear photonic applications relying on the ultrafast photo-carrier dynamics as well as optical nonlinearity in black phosphorus remain unexplored. In this work, we investigate nonlinear optical properties of solution exfoliated BP and demonstrate the usage of BP as a new saturable absorber for high energy pulse generation in fiber laser. In order to avoid the oxidization and degradation of BP, we encapsulated BP by polymer matrix which is optically transparent in the spectrum range of interest to form a composite. Two fabrication approaches were demonstrated to produce BP-polymer composite films which were further incorporated into fiber laser cavity as nonlinear media. BP shows very fast carrier dynamics and BP-polymer composite has a modulation depth of 10.6%. A highly stable Q-switched pulse generation was achieved and the single pulse energy of ~194 nJ was demonstrated. The ease of handling of such black phosphorus-polymer composite thin films affords new opportunities for wider applications such as optical sensing, signal processing and light modulation. △ Less

Submitted 23 June, 2015; originally announced June 2015.

Comments: 18 pages, 4 figures

Self-blocking of interstitial clusters near metallic grain boundaries

Authors: Xiangyan Li, Wei Liu, Yichun Xu, C. S. Liu, B. C. Pan, Yunfeng Liang, Q. F. Fang, Jun-Ling Chen, G. -N. Luo, Zhiguang Wang, Y. Dai

Abstract: Nano-crystallize materials have been known for decades to potentially owe the novel self-healing ability for radiation damage, which has been demonstrated to be especially linked to preferential occupation of interstitials at grain boundary (GB) and promoted vacancy-interstitial annihilation. A major obstacle to better understanding the healing property is the lack of an atomistic picture of the i… ▽ More Nano-crystallize materials have been known for decades to potentially owe the novel self-healing ability for radiation damage, which has been demonstrated to be especially linked to preferential occupation of interstitials at grain boundary (GB) and promoted vacancy-interstitial annihilation. A major obstacle to better understanding the healing property is the lack of an atomistic picture of the interstitial states near GBs, due to severely separation of the timescale of interstitial segregation from other events and abundance of interstitials at the GB. Here, we report a generic "self-blocking" effect of the interstitial cluster (SIAn) near the metallic GB in W, Mo and Fe. Upon creating a SIAn near the GB, it is immediately trapped by the GB during the GB structural relaxation and blocks there, impeding GB's further spontaneous trapping of the SIAn in the vicinity and making these SIAns stuck nearby the GB. The SIAn in the stuck state surprisingly owes an exceptionally larger number of annihilation sites with vacancies near the GB than the SIAn trapped at the GB due to maintaining its bulk configuration basically. Besides, it also has an unexpectedly long-ranged repelling interaction with the SIA in the bulk region, which may further affect the GB's trap of the SIAn. The self-blocking effect might shed light on more critical and extended role of the GB in healing radiation-damage in NCs than previously recognized the GB's limited role based on GB's trap for the SIA and resulted vacancy-SIA recombination. △ Less

Submitted 27 May, 2015; originally announced May 2015.

Comments: 29 pages, 6 figures

Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2

Authors: J. Jiang, F. Tang, X. C. Pan, H. M. Liu, X. H. Niu, Y. X. Wang, D. F. Xu, H. F. Yang, B. P. Xie, F. Q. Song, X. G. Wan, D. L. Feng

Abstract: We report the detailed electronic structure of WTe$_2$ by high resolution angle-resolved photoemission spectroscopy. Unlike the simple one electron plus one hole pocket type of Fermi surface topology reported before, we resolved a rather complicated Fermi surface of WTe$_2$. Specifically, there are totally nine Fermi pockets, including one hole pocket at the Brillouin zone center $Γがんま$, and two hole… ▽ More We report the detailed electronic structure of WTe$_2$ by high resolution angle-resolved photoemission spectroscopy. Unlike the simple one electron plus one hole pocket type of Fermi surface topology reported before, we resolved a rather complicated Fermi surface of WTe$_2$. Specifically, there are totally nine Fermi pockets, including one hole pocket at the Brillouin zone center $Γがんま$, and two hole pockets and two electron pockets on each side of $Γがんま$ along the $Γがんま$-$X$ direction. Remarkably, we have observed circular dichroism in our photoemission spectra, which suggests that the orbital angular momentum exhibits a rich texture at various sections of the Fermi surface. As reported previously for topological insulators and Rashiba systems, such a circular dichroism is a signature for spin-orbital coupling (SOC). This is further confirmed by our density functional theory calculations, where the spin texture is qualitatively reproduced as the conjugate consequence of SOC. Since the backscattering processes are directly involved with the resistivity, our data suggest that the SOC and the related spin and orbital angular momentum textures may be considered in the understanding of the anomalous magnetoresistance of WTe$_2$. △ Less

Submitted 4 March, 2015; originally announced March 2015.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 115, 166601 (2015)

Rigorous Error Bounds for Ewald Summation of Electrostatics at Planar Interfaces

Authors: Cong Pan, Zhonghan Hu

Abstract: We present a rigorous Ewald summation formula to evaluate the electrostatic interactions in two-dimensionally periodic planar interfaces of three-dimensional systems. By rewriting the Fourier part of the summation formula of the original Ewald2D expression with an explicit order N2 complexity to a closed form Fourier integral, we find that both the previously developed electrostatic layer correcti… ▽ More We present a rigorous Ewald summation formula to evaluate the electrostatic interactions in two-dimensionally periodic planar interfaces of three-dimensional systems. By rewriting the Fourier part of the summation formula of the original Ewald2D expression with an explicit order N2 complexity to a closed form Fourier integral, we find that both the previously developed electrostatic layer correction term and the boundary correction term naturally arise from the expression of a rigorous trapezoidal summation of the Fourier integral part. We derive the exact corrections to the trapezoidal summation in a form of contour integrals offering precise error bounds with given parameter sets of mesh size and system length. Numerical calculations of Madelung constants in model ionic crystals of slab geometry have been performed to support our analytical results. △ Less

Submitted 14 September, 2014; originally announced September 2014.

Comments: 10 pages, 7 figures

Journal ref: J. Chem. Theory Comput. (2014), 10, 534

Atomistic Mechanism from Vacancy Trapped H/He Atoms to Initiation of Bubble in W under Low Energy Ions Irradiation

Authors: Yu-Wei You, Xiang-Shan Kong, Q. F. Fang, Jun-Ling Chen, G. -N. Luo, C. S. Liu, B. C. Pan, Y. Daid

Abstract: With the first principles calculations of H and He induced energetics change we demonstrate that in W the accumulation of H (up to 9) and He (up to 4) in a single vacancy (V) surprisingly reduce the formation energy of first and second nearest vacancy (as low as 0 eV), which gives the direct evidence of V-H (He) complex mutation mechanism from V-Hn (Hen) to V2-Hn (Hen) and with the potential to le… ▽ More With the first principles calculations of H and He induced energetics change we demonstrate that in W the accumulation of H (up to 9) and He (up to 4) in a single vacancy (V) surprisingly reduce the formation energy of first and second nearest vacancy (as low as 0 eV), which gives the direct evidence of V-H (He) complex mutation mechanism from V-Hn (Hen) to V2-Hn (Hen) and with the potential to lead to the growth of H (He)-vacancy complexes: an initial step to H and He bubble. This finding well explains the long-standing problem of why H and He bubbles being produced on W surface exposed to low-energy (far lower than displacement threshold energy) D or He ions irradiation. The further identified repulsive (attractive) interaction between V-H12 (V-He14) and additional H (He) illustrates the experimentally observed big difference of deposition depth of H (micron) and He (100 angstrom) bubbles in W even the migration rate of He is far larger than that of H. △ Less

Submitted 2 May, 2013; originally announced May 2013.

Comments: 34 pages 6 figures

An operational window for radiation-resistant materials based on sequentially healing grain interiors and boundaries

Authors: Xiangyan Li, Yichun Xu, C. S. Liu, B. C. Pan, Yunfeng Liang, Q. F. Fang, Jun- Ling Chen, G. -N. Luo, Zhiguang Wang, Y. Dai

Abstract: Design of nuclear materials with high radiation-tolerance has great significance1, especially for the next generation of nuclear energy systems2,3. Response of nano- and poly-crystals to irradiation depends on the radiation temperature, dose-rate and grain size4-13. However the dependencies had been studied and interpreted individually, and thus severely lacking is the ability to predict radiation… ▽ More Design of nuclear materials with high radiation-tolerance has great significance1, especially for the next generation of nuclear energy systems2,3. Response of nano- and poly-crystals to irradiation depends on the radiation temperature, dose-rate and grain size4-13. However the dependencies had been studied and interpreted individually, and thus severely lacking is the ability to predict radiation performance of materials in extreme environments. Here we propose an operational window for radiation-resistant materials, which is based on a perspective of interactions among irradiation-induced interstitials, vacancies, and grain boundaries. Using atomic simulations, we find that healing grain boundaries needs much longer time than healing grain interiors. Not been noticed before, this finding suggests priority should be thereafter given to recovery of the grain boundary itself. This large disparity in healing time is reflected in the spectra of defects-recombination energy barriers by the presence of one high-barrier peak in addition to the peak of low barriers. The insight gained from the study instigates new avenues for examining the role of grain boundaries in healing the material. In particular, we sketch out the radiation-endurance window in the parameter space of temperature, dose-rate and grain size. The window helps evaluate material performance and develop resistant materials against radiation damage. △ Less

Submitted 29 March, 2013; originally announced March 2013.

Comments: 22p ages, 4 figures

Asymptotic Correction Schemes for Semilocal Exchange-Correlation Functionals

Authors: Chi-Ruei Pan, Po-Tung Fang, Jeng-Da Chai

Abstract: Aiming to remedy the incorrect asymptotic behavior of conventional semilocal exchange-correlation (XC) density functionals for finite systems, we propose an asymptotic correction scheme, wherein an exchange density functional whose functional derivative has the correct (-1/r) asymptote can be directly added to any semilocal density functional. In contrast to semilocal approximations, our resulting… ▽ More Aiming to remedy the incorrect asymptotic behavior of conventional semilocal exchange-correlation (XC) density functionals for finite systems, we propose an asymptotic correction scheme, wherein an exchange density functional whose functional derivative has the correct (-1/r) asymptote can be directly added to any semilocal density functional. In contrast to semilocal approximations, our resulting exchange kernel in reciprocal space exhibits the desirable singularity of the type O(-1/q^2) as q -> 0, which is a necessary feature for describing the excitonic effects in non-metallic solids. By applying this scheme to a popular semilocal density functional, PBE [J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996)], the predictions of the properties that are sensitive to the asymptote are significantly improved, while the predictions of the properties that are insensitive to the asymptote remain essentially the same as PBE. Relative to the popular model XC potential scheme, our scheme is significantly superior for ground-state energies and related properties. In addition, without loss of accuracy, two closely related schemes are developed for the efficient treatment of large systems. △ Less

Submitted 8 April, 2013; v1 submitted 2 November, 2012; originally announced November 2012.

Comments: 7 pages, 2 figures, 2 tables, supplementary material not included

Journal ref: Phys. Rev. A 87, 052510 (2013)

Tuning electronic structure of graphene via tailoring structure: theoretical study

Authors: H. Y. He, Y. Zhang, B. C. Pan

Abstract: Electronic structures of graphene sheet with different defective patterns are investigated, based on the first principles calculations. We find that defective patterns can tune the electronic structures of the graphene significantly. Triangle patterns give rise to strongly localized states near the Fermi level, and hexagonal patterns open up band gaps in the systems. In addition, rectangular patte… ▽ More Electronic structures of graphene sheet with different defective patterns are investigated, based on the first principles calculations. We find that defective patterns can tune the electronic structures of the graphene significantly. Triangle patterns give rise to strongly localized states near the Fermi level, and hexagonal patterns open up band gaps in the systems. In addition, rectangular patterns, which feature networks of graphene nanoribbons with either zigzag or armchair edges, exhibit semiconducting behaviors, where the band gap has an evident dependence on the width of the nanoribbons. For the networks of the graphene nanoribbons, some special channels for electronic transport are predicted. △ Less

Submitted 15 June, 2010; originally announced June 2010.

Comments: 5 figures, 6 pages

Journal ref: published in J. Appl. Phys. 107, 114322 (2010)

Quantum interference induced by multiple Landau-Zener transitions in a strongly driven rf-SQUID qubit

Authors: Yiwen Wang, Shanhua Cong, Xueda Wen, Cheng Pan, Guozhu Sun, Jian Chen, Lin Kang, Weiwei Xu, Yang Yu, Peiheng Wu

Abstract: We irradiated an rf-SQUID qubit with large-amplitude and high frequency electromagnetic field. Population transitions between macroscopic distinctive quantum states due to Landau-Zener transitions at energy-level avoided crossings were observed. The qubit population on the excited states as a function of flux detuning and microwave power exhibits interference patterns. Some novel features are foun… ▽ More We irradiated an rf-SQUID qubit with large-amplitude and high frequency electromagnetic field. Population transitions between macroscopic distinctive quantum states due to Landau-Zener transitions at energy-level avoided crossings were observed. The qubit population on the excited states as a function of flux detuning and microwave power exhibits interference patterns. Some novel features are found in the interference and a model based on rate equations can well address the features. △ Less

Submitted 9 May, 2017; v1 submitted 6 December, 2009; originally announced December 2009.

Comments: 6 pages, 3 figures, comments are welcome

Journal ref: Phys. Rev. B 81, 144505 (2010)

Electronic structures and Raman features of a carbon nanobud

Authors: H. Y. He, B. C. Pan

Abstract: By employing the first-principles calculations, we investigate electronic properties of a novel carbon nanostructure called a carbon nanobud, in which a $C_{60}$ molecule covalently attaches or embeds in an armchair carbon nanotube. We find that the carbon nanobud exhibits either semiconducting or metallic behavior, depending on the size of the nanotube, as well as the combination mode. Moreover… ▽ More By employing the first-principles calculations, we investigate electronic properties of a novel carbon nanostructure called a carbon nanobud, in which a $C_{60}$ molecule covalently attaches or embeds in an armchair carbon nanotube. We find that the carbon nanobud exhibits either semiconducting or metallic behavior, depending on the size of the nanotube, as well as the combination mode. Moreover, with respect to the case of the corresponding pristine nanotubes, some new electronic states appear at 0.3-0.8 eV above the Fermi level for the carbon nanobuds with the attaching mode, which agrees well with the experimental reports. In addition, the vibrational properties of the carbon nanobuds are explored. The characteristic Raman active modes for both $C_{60}$ and the corresponding pristine nanotube present in Raman spectra of the carbon nanobuds with attaching modes, consistent with the observations of a recent experiment. In contrast, such situation does not appear for the case of the carbon nanobud with the embedding mode. This indicates that the synthesized carbon nanobuds are probably of the attaching configuration rather than the embedding configuration. △ Less

Submitted 18 November, 2009; originally announced November 2009.

Comments: 5 pages, 4 figures. accepted by J. Phys. Chem. C

Journal ref: J. Phys. Chem. C 113, 20822, (2009)

Hydrogen in Ag-doped ZnO: theoretical calculations

Authors: H. Y. He, J. Hu, B. C. Pan

Abstract: Based on density functional theory calculations, we systematically investigate the behaviors of a H atom in Ag-doped ZnO, involving the preference sites, diffusion behaviors, the electronic structures and vibrational properties. We find that a H atom can migrate to the doped Ag to form a Ag-H complex by overcoming energy barriers of 0.3 - 1.0 eV. The lowest-energy site for H location is the bond… ▽ More Based on density functional theory calculations, we systematically investigate the behaviors of a H atom in Ag-doped ZnO, involving the preference sites, diffusion behaviors, the electronic structures and vibrational properties. We find that a H atom can migrate to the doped Ag to form a Ag-H complex by overcoming energy barriers of 0.3 - 1.0 eV. The lowest-energy site for H location is the bond center of a Ag-O in the basal plane. Moreover, H can migrate between this site and its equivalent sites with energy cost of less than 0.5 eV. In contrast, dissociation of such a Ag-H complex needs energy of about 1.1 - 1.3 eV. This implies that the Ag-H complexes can commonly exist in the Ag-doped ZnO, which have a negative effect on the desirable p-type carrier concentrations of Ag-doped ZnO. In addition, based on the frozen phonon calculation, the vibrational properties of ZnO with a Ag-H complex are predicted. Some new vibrational modes associated with the Ag-H complex present in the vibrational spectrum of the system. △ Less

Submitted 8 May, 2009; originally announced May 2009.

Comments: 5 pages, 4 figures, accepted by J. Chem. Phys

Journal ref: J. Chem. Phys. 130, 204516 (2009)

Lengthscale dependence of dynamic four-point susceptibilities in glass formers

Authors: David Chandler, Juan P. Garrahan, Robert L. Jack, Lutz Maibaum, Albert C. Pan

Abstract: Dynamical four-point susceptibilities measure the extent of spatial correlations in the dynamics of glass forming systems. We show how these susceptibilities depend on the length scales that necessarily form part of their definition. The behaviour of these susceptibilities is estimated by means of an analysis in terms of renewal processes within the context of dynamic facilitation. The analytic… ▽ More Dynamical four-point susceptibilities measure the extent of spatial correlations in the dynamics of glass forming systems. We show how these susceptibilities depend on the length scales that necessarily form part of their definition. The behaviour of these susceptibilities is estimated by means of an analysis in terms of renewal processes within the context of dynamic facilitation. The analytic results are confirmed by numerical simulations of an atomistic model glass-former, and of two kinetically constrained models. Hence we argue that the scenario predicted by the dynamic facilitation approach is generic. △ Less

Submitted 8 November, 2006; v1 submitted 3 May, 2006; originally announced May 2006.

Comments: 10 pages, 8 figures, v3 has minor revisions

Journal ref: Phys. Rev. E 74, 051501 (2006)

Rotational correlation and dynamic heterogeneity in a kinetically constrained lattice gas

Authors: Albert C. Pan

Abstract: We study dynamical heterogeneity and glassy dynamics in a kinetically constrained lattice gas model which has both translational and rotational degrees of freedom. We find that the rotational diffusion constant tracks the structural relaxation time as density is increased whereas the translational diffusion constant exhibits a strong decoupling. We investigate distributions of exchange and persi… ▽ More We study dynamical heterogeneity and glassy dynamics in a kinetically constrained lattice gas model which has both translational and rotational degrees of freedom. We find that the rotational diffusion constant tracks the structural relaxation time as density is increased whereas the translational diffusion constant exhibits a strong decoupling. We investigate distributions of exchange and persistence times for both the rotational and translational degrees of freedom and compare our results on the distributions of rotational exchange times to recent single molecule studies. △ Less

Submitted 29 June, 2005; originally announced June 2005.

Comments: 7 pages, 5 figures

Journal ref: J. Chem. Phys. 123, 164501 (2005)

Decoupling of self-diffusion and structural relaxation during a fragile-to-strong crossover in a kinetically constrained lattice gas

Authors: Albert C. Pan, Juan P. Garrahan, David Chandler

Abstract: We present an interpolated kinetically constrained lattice gas model which exhibits a transition from fragile to strong supercooled liquid behavior. We find non-monotonic decoupling that is due to this crossover and is seen in experiment. We present an interpolated kinetically constrained lattice gas model which exhibits a transition from fragile to strong supercooled liquid behavior. We find non-monotonic decoupling that is due to this crossover and is seen in experiment. △ Less

Submitted 30 January, 2005; originally announced January 2005.

Comments: 3 pages, 3 figures, in press at Chem. Phys. Chem

Journal ref: Chem. Phys. Chem. 6, 1783 (2005)

Heterogeneity and growing lengthscales in the dynamics of kinetically constrained lattice gases in two dimensions

Authors: Albert C. Pan, Juan P. Garrahan, David Chandler

Abstract: We study dynamical heterogeneity and growing dynamical lengthscales in two kinetically constrained models, namely, the one- and two-vacancy assisted triangular lattice gases. One of the models is a strong glassformer and the other is a fragile glassformer. Both exhibit heterogeneous dynamics with broadly distributed timescales as seen in the distribution of persistence times. We show that the St… ▽ More We study dynamical heterogeneity and growing dynamical lengthscales in two kinetically constrained models, namely, the one- and two-vacancy assisted triangular lattice gases. One of the models is a strong glassformer and the other is a fragile glassformer. Both exhibit heterogeneous dynamics with broadly distributed timescales as seen in the distribution of persistence times. We show that the Stokes-Einstein relation is violated, to a greater degree in the fragile glassformer, and show how this violation is related to dynamic heterogeneity. We extract dynamical lengthscales from structure factors of mobile particles and show, quantitatively, the growth of this lengthscale as density increases. We comment on how the scaling of lengths and times in these models relates to that in facilitated spin models of glasses. △ Less

Submitted 28 June, 2005; v1 submitted 21 October, 2004; originally announced October 2004.

Comments: 9 pages, 13 figures, updated fig. 12 and added fig. 13

Journal ref: Phys. Rev. E 72, 041106 (2005)

Dynamics of Nucleation in the Ising Model

Authors: Albert C. Pan, David Chandler

Abstract: Reactive pathways to nucleation in a three-dimensional Ising model at 60% of the critical temperature are studied using transition path sampling of single spin flip Monte Carlo dynamics. Analysis of the transition state ensemble (TSE) indicates that the critical nuclei are rough and anisotropic. The TSE, projected onto the free energy surface characterized by cluster size, N, and surface area, S… ▽ More Reactive pathways to nucleation in a three-dimensional Ising model at 60% of the critical temperature are studied using transition path sampling of single spin flip Monte Carlo dynamics. Analysis of the transition state ensemble (TSE) indicates that the critical nuclei are rough and anisotropic. The TSE, projected onto the free energy surface characterized by cluster size, N, and surface area, S, indicates the significance of other variables in addition to these two traditional reaction coordinates for nucleation. The transmission coefficient along N is ~ 0.35, and this reduction of the transmission coefficient from unity is explained in terms of the stochastic nature of the dynamic model. △ Less

Submitted 13 August, 2004; originally announced August 2004.

Comments: In press at the Journal of Physical Chemistry B, 7 pages, 8 figures

Journal ref: J. Phys. Chem. B 108, 19681-19686 (2004)