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Hydrogen-induced tunable remanent polarization in a perovskite nickelate
Authors:
Yifan Yuan,
Michele Kotiuga,
Tae Joon Park,
Yuanyuan Ni,
Arnob Saha,
Hua Zhou,
Jerzy T. Sadowski,
Abdullah Al-Mahboob,
Haoming Yu,
Kai Du,
Minning Zhu,
Sunbin Deng,
Ravindra S. Bisht,
Xiao Lyu,
Chung-Tse Michael Wu,
Peide D. Ye,
Abhronil Sengupta,
Sang-Wook Cheong,
Xiaoshan Xu,
Karin M. Rabe,
Shriram Ramanathan
Abstract:
Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential ca…
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Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trapping of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H doping. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing novel ferroelectric materials and electrets using light-ion doping.
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Submitted 20 November, 2023;
originally announced November 2023.
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Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Synaptic Devices
Authors:
Sampath Gamage,
Sukriti Manna,
Marc Zajac,
Steven Hancock,
Qi Wang,
Sarabpreet Singh,
Mahdi Ghafariasl,
Kun Yao,
Tom Tiwald,
Tae Joon Park,
David P. Landau,
Haidan Wen,
Subramanian Sankaranarayanan,
Pierre Darancet,
Shriram Ramanathan,
Yohannes Abate
Abstract:
Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nick…
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Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO3) devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveil a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in-situ - x-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential to the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function.
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Submitted 29 August, 2023;
originally announced September 2023.
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Electrically tunable VO2-metal metasurface for mid-infrared switching, limiting, and nonlinear isolation
Authors:
Jonathan King,
Chenghao Wan,
Tae Joon Park,
Sanket Despande,
Zhen Zhang,
Shriram Ramanathan,
Mikhail A. Kats
Abstract:
We demonstrate an electrically controlled metal-VO2 metasurface for the mid-wave infrared that simultaneously functions as a tunable optical switch, an optical limiter with a tunable limiting threshold, and a nonlinear optical isolator with a tunable operating range. The tunability is achieved via Joule heating through the metal comprising the metasurface, resulting in an integrated optoelectronic…
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We demonstrate an electrically controlled metal-VO2 metasurface for the mid-wave infrared that simultaneously functions as a tunable optical switch, an optical limiter with a tunable limiting threshold, and a nonlinear optical isolator with a tunable operating range. The tunability is achieved via Joule heating through the metal comprising the metasurface, resulting in an integrated optoelectronic device. As an optical switch, the device has an experimental transmission ratio of ~100 when varying the bias current. Operating as an optical limiter, we demonstrated tunability of the limiting threshold from 20 mW to 180 mW of incident laser power. Similar degrees of tunability are also achieved for nonlinear optical isolation, which enables asymmetric (nonreciprocal) transmission.
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Submitted 21 July, 2023; v1 submitted 15 March, 2023;
originally announced March 2023.
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Efficient Probabilistic Computing with Stochastic Perovskite Nickelates
Authors:
Tae Joon Park,
Kemal Selcuk,
Hai-Tian Zhang,
Sukriti Manna,
Rohit Batra,
Qi Wang,
Haoming Yu,
Subramanian K. R. S. Sankaranarayanan,
Hua Zhou,
Kerem Y. Camsari,
Shriram Ramanathan
Abstract:
Probabilistic computing has emerged as a viable approach to solve hard optimization problems. Devices with inherent stochasticity can greatly simplify their implementation in electronic hardware. Here, we demonstrate intrinsic stochastic resistance switching controlled via electric fields in perovskite nickelates doped with hydrogen. The ability of hydrogen ions to reside in various metastable con…
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Probabilistic computing has emerged as a viable approach to solve hard optimization problems. Devices with inherent stochasticity can greatly simplify their implementation in electronic hardware. Here, we demonstrate intrinsic stochastic resistance switching controlled via electric fields in perovskite nickelates doped with hydrogen. The ability of hydrogen ions to reside in various metastable configurations in the lattice leads to a distribution of transport gaps. With experimentally characterized p-bits, a shared-synapse p-bit architecture demonstrates highly-parallelized and energy-efficient solutions to optimization problems such as integer factorization and Boolean-satisfiability. The results introduce perovskite nickelates as scalable potential candidates for probabilistic computing and showcase the potential of light-element dopants in next-generation correlated semiconductors.
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Submitted 30 August, 2022;
originally announced August 2022.
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Proton distribution visualization in perovskite nickelate devices utilizing nanofocused X-rays
Authors:
Ivan A. Zaluzhnyy,
Peter O. Sprau,
Richard Tran,
Qi Wang,
Hai-Tian Zhang,
Zhen Zhang,
Tae Joon Park,
Nelson Hua,
Boyan Stoychev,
Mathew J. Cherukara,
Martin V. Holt,
Evgeny Nazarertski,
Xiaojing Huang,
Hanfei Yan,
Ajith Pattammattel,
Yong S. Chu,
Shyue Ping Ong,
Shriram Ramanathan,
Oleg G. Shpyrko,
Alex Frano
Abstract:
We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO$_3$-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory (DFT) simulations show partial reduction of nickel valence in the region with high proton concentration, which leads to the insulating behavior. Concurrently, x-ray diffraction reveals only a small latti…
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We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO$_3$-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory (DFT) simulations show partial reduction of nickel valence in the region with high proton concentration, which leads to the insulating behavior. Concurrently, x-ray diffraction reveals only a small lattice distortion in the doped regions. Together, our results directly show that the knob which proton doping modifies is the electronic valency, and not the crystal lattice. The studies are relevant to on-going efforts to disentangle structural and electronic effects across metal-insulator phase transitions in correlated oxides.
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Submitted 13 August, 2021;
originally announced August 2021.
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Direct evidence of electronic interaction at the atomic-layer-deposited MoS2 monolayer/SiO2 interface
Authors:
Minji Lee,
Yejin Kim,
Ahmed Yousef Mohamed,
Han-Koo Lee,
Kyuwook Ihm,
Dae Hyun Kim,
Tae Joo Park,
Deok-Yong Cho
Abstract:
The electronic structure of an atomic-layer-deposited MoS2 monolayer on SiO2 was investigated using X-ray absorption spectroscopy (XAS) and synchrotron X-ray photoelectron spectroscopy (XPS). The angle-dependent evolution of the XAS spectra and the photon-energy-dependent evolution of the XPS spectra were analyzed in detail using an ab-initio electronic structure simulation. Although similar to th…
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The electronic structure of an atomic-layer-deposited MoS2 monolayer on SiO2 was investigated using X-ray absorption spectroscopy (XAS) and synchrotron X-ray photoelectron spectroscopy (XPS). The angle-dependent evolution of the XAS spectra and the photon-energy-dependent evolution of the XPS spectra were analyzed in detail using an ab-initio electronic structure simulation. Although similar to the theoretical spectra of an ideal free-standing MoS2 ML, the experimental spectra exhibit features that are distinct from those of an ideal ML, which can be interpreted as a consequence of S-O van der Waals (vdW) interactions. The strong consensus among the experimental and theoretical spectra suggests that the vdW interactions between MoS2 and adjacent SiO2 layers can influence the electronic structure of the system, manifesting a substantial electronic interaction at the MoS2-SiO2 interface.
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Submitted 27 April, 2021;
originally announced April 2021.
