Showing 1–42 of 42 results for author: Petit, L

Raman analysis of the dehydrogenation process of hydrogenated monolayer graphene

Authors: Tom Fournier, Kelvin Cruz, Marc Monthioux, Benjamin Lassagne, Lionel Petit, Sébastien Moyano, Pascal Puech, Fabrice Piazza

Abstract: Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or hydrogenated graphene is crucial for application, as processing conditions (e.g. temperature) and quality control (characterization) conditions may result in modifying… ▽ More Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or hydrogenated graphene is crucial for application, as processing conditions (e.g. temperature) and quality control (characterization) conditions may result in modifying the material through partial or full dehydrogenation, and subsequent alteration of its electronic properties. This work reports a study of various dehydrogenation conditions of hydrogenated or hydrogen-etched monolayer graphene (1LG), either free-standing or supported by an interferential (SiO2/Si) substrate, using incremental annealing under nitrogen atmosphere up to 400 {\textdegree}C. Materials were investigated by Raman spectroscopy. Indeed, it has been known since 2012 that the intensity ratio of two Raman bands activated by double resonance, D over D' (ID/ID') can be used to identify the type of defects in defective graphene. It is shown that hydrogenated 1LG, characterized by a large ID/ID' ratio (~9-15), is stable provided annealing remains below 300 {\textdegree}C. On the other hand, defective 1LG resulting from hydrogen etching remains stable up to 400 {\textdegree}C, whether the 1LG is hydrogenated on one side or both sides, while a modification in the type and proportions of defects is likely. Experimental conditions for the safe use of Raman spectroscopy, otherwise able to induce specimen overheating because of the laser energy and power, are also determined and discussed. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Journal ref: Materials Chemistry and Physics, 2024, 321, pp.129490

Performance of graphene Hall effect sensors: role of bias current, disorder and Fermi velocity

Authors: Lionel Petit, Tom Fournier, Géraldine Ballon, Cédric Robert, Delphine Lagarde, Pascal Puech, Thomas Blon, Benjamin Lassagne

Abstract: Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. He… ▽ More Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. Here we present an advanced model that provides an in-depth understanding of how graphene Hall sensors operate, and demonstrate its ability to quantitatively assess their performance. First, we report the fabrication of sensors with different qualities of graphene, with the best devices achieving magnetic field sensitivities as high as 5000 ohms/T, outperforming the best silicon and narrow-gap semiconductor-based sensors. Then, we examine their performance in detail using the proposed numerical model, which combines Boltzmann formalism, with distinct Fermi levels for electrons and holes, and a new method for the introduction of substrate-induced electron-hole puddles. Importantly, the dependences of magnetic field sensitivity on bias current, disorder, substrate and Hall bar geometry are quantitatively reproduced for the first time. In addition, the model emphasizes that the performance of devices with widths of the order of the charge carrier diffusion length, is significantly affected by the bias current due to the occurrence of large and non-symmetric carrier accumulation and depletion areas near the edges of the Hall bar. The formation of these areas induces a transverse diffusion particle flux capable of counterbalancing the particle flux induced by the Lorentz force when the Hall electric field cancels out in the ambipolar regime. Finally, we discuss how sensor performance can be enhanced by Fermi velocity engineering, paving the way for future ultra-sensitive graphene Hall effect sensors. △ Less

Submitted 17 March, 2024; originally announced March 2024.

Comments: 27 pages including supplemental material, 12 figures in the main text and 6 figures in the supplemental material

Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device

Authors: Morteza Aghaee, Alejandro Alcaraz Ramirez, Zulfi Alam, Rizwan Ali, Mariusz Andrzejczuk, Andrey Antipov, Mikhail Astafev, Amin Barzegar, Bela Bauer, Jonathan Becker, Umesh Kumar Bhaskar, Alex Bocharov, Srini Boddapati, David Bohn, Jouri Bommer, Leo Bourdet, Arnaud Bousquet, Samuel Boutin, Lucas Casparis, Benjamin James Chapman, Sohail Chatoor, Anna Wulff Christensen, Cassandra Chua, Patrick Codd, William Cole , et al. (137 additional authors not shown)

Abstract: The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct… ▽ More The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μみゅー$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μみゅー$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%. △ Less

Submitted 2 April, 2024; v1 submitted 17 January, 2024; originally announced January 2024.

Comments: Added data on a second measurement of device A and a measurement of device B, expanded discussion of a trivial scenario. Refs added, author list updated

Electron and hole doping of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride

Authors: Jules Fraunié, Rayan Jamil, Richard Kantelberg, Sébastien Roux, Lionel Petit, Emmanuel Lepleux, Louis Pacheco, Kenji Watanabe, Takashi Taniguchi, Vincent Jacques, Laurent Lombez, Mikhail M. Glazov, Benjamin Lassagne, Xavier Marie, Cedric Robert

Abstract: For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show t… ▽ More For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show that opposite polarizations in ferroelectric domains of a folded hBN layer can imprint local n and p doping in a semiconducting transition metal dichalcogenide WSe2 monolayer. We demonstrate that WSe2 can be used as an optical probe of ferroelectricity in hBN and show that the doping density and type can be controlled with the position of the semiconductor with respect to the ferroelectric interface. Our results establish the ferroelectric hBN/WSe2 van der Waals stacking as a promising optoelectronic structure. △ Less

Submitted 6 December, 2023; v1 submitted 16 July, 2023; originally announced July 2023.

InAs-Al Hybrid Devices Passing the Topological Gap Protocol

Authors: Morteza Aghaee, Arun Akkala, Zulfi Alam, Rizwan Ali, Alejandro Alcaraz Ramirez, Mariusz Andrzejczuk, Andrey E Antipov, Pavel Aseev, Mikhail Astafev, Bela Bauer, Jonathan Becker, Srini Boddapati, Frenk Boekhout, Jouri Bommer, Esben Bork Hansen, Tom Bosma, Leo Bourdet, Samuel Boutin, Philippe Caroff, Lucas Casparis, Maja Cassidy, Anna Wulf Christensen, Noah Clay, William S Cole, Fabiano Corsetti , et al. (102 additional authors not shown)

Abstract: We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-loca… ▽ More We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μみゅー$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes. △ Less

Submitted 8 March, 2024; v1 submitted 6 July, 2022; originally announced July 2022.

Comments: Final version

Multiscale Modelling of the Antiferromagnet Mn2Au: From ab-initio to Micromagnetics

Authors: Joel Hirst, Unai Atxitia, Sergiu Ruta, Jerome Jackson, Leon Petit, Thomas Ostler

Abstract: Antiferromagnets (AFMs) are strong candidates for the future spintronic and memory applications largely because of their inherently fast dynamics and lack of stray fields, with Mn2Au being one of the most promising. For the numerical modelling of magnetic material properties, it is common to use ab-initio methods, atomistic models and micromagnetics. However, each method alone describes the physic… ▽ More Antiferromagnets (AFMs) are strong candidates for the future spintronic and memory applications largely because of their inherently fast dynamics and lack of stray fields, with Mn2Au being one of the most promising. For the numerical modelling of magnetic material properties, it is common to use ab-initio methods, atomistic models and micromagnetics. However, each method alone describes the physics within certain limits. Multiscale methods bridging the gap between these three approaches have been already proposed for ferromagnetic materials. Here, we present a complete multiscale model of the AFM Mn2Au as an exemplar material, starting with results from ab-initio methods going via atomistic spin dynamics (ASD) to an AFM Landau-Lifshitz-Bloch (AFM-LLB) model. Firstly, bulk is modelled using a classical spin Hamiltonian constructed based on earlier first-principles calculations. Secondly, this spin model is used in the stochastic Landau-Lifshitz-Gilbert (LLG) to calculate temperature-dependent equilibrium properties, such as magnetization and magnetic susceptibilities. Thirdly, the temperature dependent micromagnetic parameters are used in the AFM-LLB. We validate our approach by comparing the ASD and AFM-LLB models for three paradigmatic cases; (i) Damped magnetic oscillations, (ii) magnetization dynamics following a heat pulse resembling pump-probe experiments, (iii) magnetic domain wall motion under thermal gradients. △ Less

Submitted 17 June, 2022; originally announced June 2022.

Comments: 14 pages, 12 figures

Hubbard models with arbitrary structures in programmable optical lattices

Authors: J. P. Hague, L. Petit, C. MacCormick

Abstract: We investigate the use of programmable optical lattices for quantum simulation of Hubbard models, determining analytic expressions for the hopping and Hubbard U, finding that they are suitable for emulating strongly correlated systems with arbitrary structures, including those with multiple site basis and impurities. Programmable potentials are highly flexible, with the ability to control the dept… ▽ More We investigate the use of programmable optical lattices for quantum simulation of Hubbard models, determining analytic expressions for the hopping and Hubbard U, finding that they are suitable for emulating strongly correlated systems with arbitrary structures, including those with multiple site basis and impurities. Programmable potentials are highly flexible, with the ability to control the depth and shape of individual sites in the optical lattice dynamically. Quantum simulators of Hubbard models with (1) arbitrary basis are required to represent many real materials of contemporary interest, (2) broken translational symmetry are needed to study impurity physics, and (3) dynamical lattices are needed to investigate strong correlation out of equilibrium. We derive analytic expressions for Hubbard Hamiltonians in programmable potential systems. We find experimental parameters for quantum simulation of Hubbard models with arbitrary basis, concluding that programmable optical lattices are suitable for this purpose. We discuss how programmable optical lattices can be used for quantum simulation of dynamical multi-band Hubbard models that represent complicated compounds, impurities, and non-equilibrium physics. △ Less

Submitted 24 August, 2021; v1 submitted 6 May, 2021; originally announced May 2021.

Experimental and theoretical study of the correlated compound YbCdSn: Evidence for large magnetoresistance and mass enhancement

Authors: Antu Laha, P. Rambabu, V. Kanchana, L. Petit, Z. Szotek, Z. Hossain

Abstract: The unusual features of topological semimetals arise from its nontrivial band structure. The impact of strong electron correlations on the topological states remains largely unexplored in real materials. Here, we report the magnetotransport properties of YbCdSn single crystals. We found two fundamental experimental evidences of electron correlations through magnetic susceptibility and specific hea… ▽ More The unusual features of topological semimetals arise from its nontrivial band structure. The impact of strong electron correlations on the topological states remains largely unexplored in real materials. Here, we report the magnetotransport properties of YbCdSn single crystals. We found two fundamental experimental evidences of electron correlations through magnetic susceptibility and specific heat. The electron correlations in this compound lead to an intermediate valence state and enhance the effective mass of the charge carriers. This correlated state exhibits large nonsaturating magnetoresistance, low carrier density, magnetic field induced metal-semiconductor-like crossover and a plateau in resistivity at low temperatures. This compound also shows a cusp-like magnetoconductivity at low magnetic field which indicates the presence of weak antilocalization effect. Our band structure calculations of Yb$^{2+}$ state predict YbCdSn to be a topological nodal-line semimetal. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Comments: 10 Pages, 8 Figures, Published, Phys. Rev. B

High-fidelity two-qubit gates in silicon above one Kelvin

Authors: L. Petit, M. Russ, H. G. J. Eenink, W. I. L. Lawrie, J. S. Clarke, L. M. K. Vandersypen, M. Veldhorst

Abstract: Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to exec… ▽ More Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to execute a multitude of native two-qubit gates in a single device, reducing the operation overhead to perform quantum algorithms. We demonstrate, at a temperature above one Kelvin, single-qubit rotations together with the two-qubit gates CROT, CPHASE and SWAP. Furthermore we realize adiabatic, diabatic and composite sequences to optimize the qubit control fidelity and the gate time. We find two-qubit gates that can be executed within 67 ns and by theoretically analyzing the experimental noise sources we predict fidelities exceeding 99%. This promises fault-tolerant operation using quantum hardware that can be embedded with classical electronics for quantum integrated circuits. △ Less

Submitted 17 July, 2020; originally announced July 2020.

Comments: 7 pages, 5 figures

Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots

Authors: W. I. L. Lawrie, N. W. Hendrickx, F. van Riggelen, M. Russ, L. Petit, A. Sammak, G. Scappucci, M. Veldhorst

Abstract: We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the (1,5)-(0,6) anticrossing, consistent with a standard Fock-Darwin spectrum. We find spin relaxation times $T_1$ as high as 32 ms for a quantum dot with single-hole… ▽ More We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the (1,5)-(0,6) anticrossing, consistent with a standard Fock-Darwin spectrum. We find spin relaxation times $T_1$ as high as 32 ms for a quantum dot with single-hole occupation and 1.2 ms for a quantum dot occupied by five-holes, setting benchmarks for spin relaxation times for hole quantum dots. Furthermore, we investigate the qubit addressability and sensitivity to electric fields by measuring the resonance frequency dependence of each qubit on gate voltages. We are able to tune the resonance frequency over a large range for both the single and multi-hole qubit. Simultaneously, we find that the resonance frequencies are only weakly dependent on neighbouring gates, and in particular the five-hole qubit resonance frequency is more than twenty times as sensitive to its corresponding plunger gate. The excellent individual qubit tunability and long spin relaxation times make holes in germanium promising for addressable and high-fidelity spin qubits in dense two-dimensional quantum dot arrays for large-scale quantum information. △ Less

Submitted 22 June, 2020; originally announced June 2020.

Comments: 7 Pages (6 Main + 1 Supplementary Information) 5 Figures (4 Main, 1 Supplementary Information)

Journal ref: Nano Lett. 2020, 20, 10, 7237-7242

First-order ferromagnetic transitions of lanthanide local moments in divalent compounds: An itinerant electron positive feedback mechanism and Fermi surface topological change

Authors: Eduardo Mendive-Tapia, Durga Paudyal, Leon Petit, Julie B. Staunton

Abstract: Around discontinuous (first-order) magnetic phase transitions the strong caloric response of materials to the application of small fields is widely studied for the development of solid-state refrigeration. Typically strong magnetostructural coupling drives such transitions and the attendant substantial hysteresis dramatically reduces the cooling performance. In this context we describe a purely el… ▽ More Around discontinuous (first-order) magnetic phase transitions the strong caloric response of materials to the application of small fields is widely studied for the development of solid-state refrigeration. Typically strong magnetostructural coupling drives such transitions and the attendant substantial hysteresis dramatically reduces the cooling performance. In this context we describe a purely electronic mechanism which pilots a first-order paramagnetic-ferromagnetic transition in divalent lanthanide compounds and which explains the giant non-hysteretic magnetocaloric effect recently discovered in a Eu$_2$In compound. There is positive feedback between the magnetism of itinerant valence electrons and the ferromagnetic ordering of local $f$-electron moments, which appears as a topological change to the Fermi surface. The origin of this electronic mechanism stems directly from Eu's divalency, which explains the absence of a similar discontinuous transition in Gd$_2$In. △ Less

Submitted 26 May, 2020; originally announced May 2020.

Comments: 8 pages, 7 figures

Journal ref: Physical Review B 101, 174437 (2020)

A single-hole spin qubit

Authors: N. W. Hendrickx, W. I. L. Lawrie, L. Petit, A. Sammak, G. Scappucci, M. Veldhorst

Abstract: Qubits based on quantum dots have excellent prospects for scalable quantum technology due to their inherent compatibility with standard semiconductor manufacturing. While early on it was recognized that holes may offer a multitude of favourable properties for fast and scalable quantum control, research thus far has remained almost exclusively restricted to the simpler electron system. However, rec… ▽ More Qubits based on quantum dots have excellent prospects for scalable quantum technology due to their inherent compatibility with standard semiconductor manufacturing. While early on it was recognized that holes may offer a multitude of favourable properties for fast and scalable quantum control, research thus far has remained almost exclusively restricted to the simpler electron system. However, recent developments with holes have led to separate demonstrations of single-shot readout and fast quantum logic, albeit only in the multi-hole regime. Here, we establish a single-hole spin qubit in germanium and demonstrate the integration of single-shot readout and quantum control. Moreover, we make use of Pauli spin blockade, allowing to arbitrarily set the qubit resonance frequency, while providing large readout windows. We deplete a planar germanium double quantum dot to the last hole, confirmed by radio-frequency reflectrometry charge sensing, and achieve single-shot spin readout. To demonstrate the integration of the readout and qubit operation, we show Rabi driving on both qubits and find remarkable electric control over their resonance frequencies. Finally, we analyse the spin relaxation time, which we find to exceed one millisecond, setting the benchmark for hole-based spin qubits. The ability to coherently manipulate a single hole spin underpins the quality of strained germanium and defines an excellent starting point for the construction of novel quantum hardware. △ Less

Submitted 24 December, 2019; v1 submitted 22 December, 2019; originally announced December 2019.

Comments: 6 pages, 4 figures

Universal quantum logic in hot silicon qubits

Authors: L. Petit, H. G. J. Eenink, M. Russ, W. I. L. Lawrie, N. W. Hendrickx, J. S. Clarke, L. M. K. Vandersypen, M. Veldhorst

Abstract: Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is ext… ▽ More Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is extremely limited, and this severely impacts the perspective for practical quantum computation. Recent works on spins in silicon have shown steps towards a platform that can be operated at higher temperatures by demonstrating long spin lifetimes, gate-based spin readout, and coherent single-spin control, but the crucial two-qubit logic gate has been missing. Here we demonstrate that silicon quantum dots can have sufficient thermal robustness to enable the execution of a universal gate set above one Kelvin. We obtain single-qubit control via electron-spin-resonance (ESR) and readout using Pauli spin blockade. We show individual coherent control of two qubits and measure single-qubit fidelities up to 99.3 %. We demonstrate tunability of the exchange interaction between the two spins from 0.5 up to 18 MHz and use this to execute coherent two-qubit controlled rotations (CROT). The demonstration of `hot' and universal quantum logic in a semiconductor platform paves the way for quantum integrated circuits hosting the quantum hardware and their control circuitry all on the same chip, providing a scalable approach towards practical quantum information. △ Less

Submitted 11 October, 2019; originally announced October 2019.

Journal ref: Nature 580, 355-359 (2020)

Quantum Dot Arrays in Silicon and Germanium

Authors: W. I. L. Lawrie, H. G. J. Eenink, N. W. Hendrickx, J. M. Boter, L. Petit, S. V. Amitonov, M. Lodari, B. Paquelet Wuetz, C. Volk, S. Philips, G. Droulers, N. Kalhor, F. van Riggelen, D. Brousse, A. Sammak, L. M. K. Vandersypen, G. Scappucci, M. Veldhorst

Abstract: Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereb… ▽ More Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing. △ Less

Submitted 14 September, 2019; originally announced September 2019.

Comments: Main text: 8 pages, 6 figures. Supporting Info: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 116, 080501 (2020)

Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots

Authors: H. G. J. Eenink, L. Petit, W. I. L. Lawrie, J. S. Clarke, L. M. K. Vandersypen, M. Veldhorst

Abstract: Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hu… ▽ More Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hurdle with gate-defined quantum dots and show couplings that can be tuned on and off for quantum operations. We use charge sensing to discriminate between the (2,0) and (1,1) charge states of a double quantum dot and show excellent charge sensitivity. We demonstrate tunable coupling up to 13 GHz, obtained by fitting charge polarization lines, and tunable tunnel rates down to below 1 Hzへるつ, deduced from the random telegraph signal. The demonstration of tunable coupling between single electrons in a silicon metal-oxide-semiconductor device provides significant scope for high-fidelity two-qubit logic toward quantum information processing with standard manufacturing. △ Less

Submitted 13 January, 2020; v1 submitted 19 July, 2019; originally announced July 2019.

Comments: 6 pages, 3 figures

Journal ref: Nano Letters 19 (12), 8653-8657 (2019)

Spin lifetime and charge noise in hot silicon quantum dot qubits

Authors: L. Petit, J. M. Boter, H. G. J. Eenink, G. Droulers, M. L. V. Tagliaferri, R. Li, D. P. Franke, K. J. Singh, J. S. Clarke, R. N. Schouten, V. V. Dobrovitski, L. M. K. Vandersypen, M. Veldhorst

Abstract: We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise… ▽ More We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures. △ Less

Submitted 1 September, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Lett. 121, 076801 (2018)

Calculating the Magnetic Anisotropy of Rare-Earth-Transition-Metal Ferrimagnets

Authors: Christopher E. Patrick, Santosh Kumar, Geetha Balakrishnan, Rachel S. Edwards, Martin R. Lees, Leon Petit, Julie B. Staunton

Abstract: Magnetocrystalline anisotropy, the microscopic origin of permanent magnetism, is often explained in terms of ferromagnets. However, the best performing permanent magnets based on rare earths and transition metals (RE-TM) are in fact ferrimagnets, consisting of a number of magnetic sublattices. Here we show how a naive calculation of the magnetocrystalline anisotropy of the classic RE-TM ferrimagne… ▽ More Magnetocrystalline anisotropy, the microscopic origin of permanent magnetism, is often explained in terms of ferromagnets. However, the best performing permanent magnets based on rare earths and transition metals (RE-TM) are in fact ferrimagnets, consisting of a number of magnetic sublattices. Here we show how a naive calculation of the magnetocrystalline anisotropy of the classic RE-TM ferrimagnet GdCo$_5$ gives numbers which are too large at 0 K and exhibit the wrong temperature dependence. We solve this problem by introducing a first-principles approach to calculate temperature-dependent magnetization vs. field (FPMVB) curves, mirroring the experiments actually used to determine the anisotropy. We pair our calculations with measurements on a recently-grown single crystal of GdCo$_5$, and find excellent agreement. The FPMVB approach demonstrates a new level of sophistication in the use of first-principles calculations to understand RE-TM magnets. △ Less

Submitted 1 March, 2018; originally announced March 2018.

Comments: 13 pages, 3 figures; Supplemental Information included in submission

Journal ref: Phys. Rev. Lett. 120, 097202 (2018)

Probing the Fluctuation-Dissipation Theorem in a Perrin-like Experiment

Authors: Jean Colombani, Laure Petit, Christophe Ybert, Catherine Barentin

Abstract: In this Letter, we present a new experimental approach to investigate the effective temperature concept as a generalization of the fluctuation-dissipation theorem (FDT) for nonequilibrium systems. Simultaneous measurements of diffusion coefficient and sedimentation velocity of heavy colloids, embedded in a Laponite clay suspension, are performed with a fluorescence-recovery-based setup. This nonpe… ▽ More In this Letter, we present a new experimental approach to investigate the effective temperature concept as a generalization of the fluctuation-dissipation theorem (FDT) for nonequilibrium systems. Simultaneous measurements of diffusion coefficient and sedimentation velocity of heavy colloids, embedded in a Laponite clay suspension, are performed with a fluorescence-recovery-based setup. This nonperturbative dual measurement, performed at a single time in a single sample, allows for a direct application of the FDT to the tracer velocity observable. It thus provides a well-defined derivation of the effective temperature in this ageing colloidal gel. For a wide range of concentrations and ageing times, we report no violation of the FDT, with effective temperature agreeing with bath temperature. This result is consistent with recent theoretical predictions on the coupling between the velocity observable and nonequilibrium gels dynamics. △ Less

Submitted 5 December, 2017; originally announced December 2017.

Journal ref: Physical Review Letters, American Physical Society, 2011, 107 (13)

A Crossbar Network for Silicon Quantum Dot Qubits

Authors: R. Li, L. Petit, D. P. Franke, J. P. Dehollain, J. Helsen, M. Steudtner, N. K. Thomas, Z. R. Yoscovits, K. J. Singh, S. Wehner, L. M. K. Vandersypen, J. S. Clarke, M. Veldhorst

Abstract: The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. In order to increase the number of qubits to the thousands or millions of qubits needed for practical quantum info… ▽ More The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. In order to increase the number of qubits to the thousands or millions of qubits needed for practical quantum information we present an architecture based on shared control and a scalable number of lines. Crucially, the control lines define the qubit grid, such that no local components are required. Our design enables qubit coupling beyond nearest neighbors, providing prospects for non-planar quantum error correction protocols. Fabrication is based on a three-layer design to define qubit and tunnel barrier gates. We show that a double stripline on top of the structure can drive high-fidelity single-qubit rotations. Qubit addressability and readout are enabled by self-aligned inhomogeneous magnetic fields induced by direct currents through superconducting gates. Qubit coupling is based on the exchange interaction, and we show that parallel two-qubit gates can be performed at the detuning noise insensitive point. While the architecture requires a high level of uniformity in the materials and critical dimensions to enable shared control, it stands out for its simplicity and provides prospects for large-scale quantum computation in the near future. △ Less

Submitted 10 November, 2017; originally announced November 2017.

Comments: 13 pages, 7 figures

Journal ref: Science Advances 4, eaar3960 (2018)

Rare-earth/transition-metal magnetic interactions in pristine and (Ni,Fe)-doped YCo5 and GdCo5

Authors: Christopher E. Patrick, Santosh Kumar, Geetha Balakrishnan, Rachel S. Edwards, Martin R. Lees, Eduardo Mendive-Tapia, Leon Petit, Julie B. Staunton

Abstract: We present an investigation into the intrinsic magnetic properties of the compounds YCo5 and GdCo5, members of the RETM5 class of permanent magnets (RE = rare earth, TM = transition metal). Focusing on Y and Gd provides direct insight into both the TM magnetization and RE-TM interactions without the complication of strong crystal field effects. We synthesize single crystals of YCo5 and GdCo5 using… ▽ More We present an investigation into the intrinsic magnetic properties of the compounds YCo5 and GdCo5, members of the RETM5 class of permanent magnets (RE = rare earth, TM = transition metal). Focusing on Y and Gd provides direct insight into both the TM magnetization and RE-TM interactions without the complication of strong crystal field effects. We synthesize single crystals of YCo5 and GdCo5 using the optical floating zone technique and measure the magnetization from liquid helium temperatures up to 800 K. These measurements are interpreted through calculations based on a Green's function formulation of density-functional theory, treating the thermal disorder of the local magnetic moments within the coherent potential approximation. The rise in the magnetization of GdCo5 with temperature is shown to arise from a faster disordering of the Gd magnetic moments compared to the antiferromagnetically aligned Co sublattice. We use the calculations to analyze the different Curie temperatures of the compounds and also compare the molecular (Weiss) fields at the RE site with previously published neutron scattering experiments. To gain further insight into the RE-TM interactions, we perform substitutional doping on the TM site, studying the compounds RECo4.5Ni0.5, RECo4Ni, and RECo4.5Fe0.5. Both our calculations and experiments on powdered samples find an increased/decreased magnetization with Fe/Ni doping, respectively. The calculations further reveal a pronounced dependence on the location of the dopant atoms of both the Curie temperatures and the Weiss field at the RE site. △ Less

Submitted 1 August, 2017; originally announced August 2017.

Comments: 13 figures, 1 table

Journal ref: Phys. Rev. Materials 1, 024411 (2017)

Effect of the addition of Al2O3, TiO2 and ZnO on the thermal, structural and luminescence properties of Er3+-doped phosphate glasses

Authors: Pablo Lopez-Iscoa, Laeticia Petit, Jonathan Massera, Davide Janner, Nadia G. Boetti, Diego Pugliese, Sonia Fiorilli, Chiara Novara, Fabrizio Giorgis, Daniel Milanese

Abstract: Er-doped phosphate glasses were fabricated by melt-quenching technique. The changes in their thermal, structural and luminescence properties with the addition of Al2O3, TiO2 or ZnO were studied. Physical and thermal properties were investigated through density measurement and differential thermal analysis. Structural characterization was performed using the Raman and Infrared spectroscopy. In orde… ▽ More Er-doped phosphate glasses were fabricated by melt-quenching technique. The changes in their thermal, structural and luminescence properties with the addition of Al2O3, TiO2 or ZnO were studied. Physical and thermal properties were investigated through density measurement and differential thermal analysis. Structural characterization was performed using the Raman and Infrared spectroscopy. In order to study the influence of the composition on the luminescence properties of the glasses, the refractive index, the luminescence spectra and the lifetime values were measured. The results show that with the addition of Al2O3 and TiO2 the phosphate network becomes more connected increasing the glass transition temperature, whereas the addition of ZnO does not show significant changes in the optical, thermal and structural properties but it leads to a larger emission cross-section at 1540 nm as compared to the other glasses. As the site of the Er3+ is not strongly affected by the change in the glass composition, we think that the emission properties of the glasses depend on the glass structure connectivity, which has an impact on the Er3+ ions solubility. △ Less

Submitted 9 April, 2018; v1 submitted 9 March, 2017; originally announced March 2017.

Comments: 32 pages, 9 figures, 1 table

Journal ref: Journal of Non Crystalline Solids 460 (2017) 161-168

Complex magnetism of lanthanide intermetallics unravelled

Authors: L. Petit, D. Paudyal, Y. Mudryk, K. A. Gschneidner Jr., V. K. Pecharsky, M. Lueders, Z. Szotek, R. Banerjee, J. B. Staunton

Abstract: We explain a profound complexity of magnetic interactions of some technologically relevant gadolinium intermetallics using an ab-initio electronic structure theory which includes disordered local moments and strong $f$-electron correlations. The theory correctly finds GdZn and GdCd to be simple ferromagnets and predicts a remarkably large increase of Curie temperature with pressure of +1.5 K kbar… ▽ More We explain a profound complexity of magnetic interactions of some technologically relevant gadolinium intermetallics using an ab-initio electronic structure theory which includes disordered local moments and strong $f$-electron correlations. The theory correctly finds GdZn and GdCd to be simple ferromagnets and predicts a remarkably large increase of Curie temperature with pressure of +1.5 K kbar$^{-1}$ for GdCd confirmed by our experimental measurements of +1.6 K kbar$^{-1}$. Moreover we find the origin of a ferromagnetic-antiferromagnetic competition in GdMg manifested by non-collinear, canted magnetic order at low temperatures. Replacing 35\% of the Mg atoms with Zn removes this transition in excellent agreement with longstanding experimental data. △ Less

Submitted 18 August, 2015; originally announced August 2015.

Comments: 11 pages, 4 figures

Journal ref: Phys. Rev. Lett. 115, 207201 (2015)

Rare Earth Monopnictides and Monochalcogenides from First Principles: Towards an Electronic Phase Diagram of Strongly Correlated Materials

Authors: L. Petit, R. Tyer, Z. Szotek, W. M. Temmerman, A. Svane

Abstract: We present results of an ab-initio study of the electronic structure of 140 rare earth compounds. Specifically we predict an electronic phase diagram of the entire range of rare earth monopnictides and monochalcogenides, composed of metallic, semiconducting and heavy fermion-like regions, and exhibiting valency transitions brought about by a complex interplay between ligand chemistry and lanthanid… ▽ More We present results of an ab-initio study of the electronic structure of 140 rare earth compounds. Specifically we predict an electronic phase diagram of the entire range of rare earth monopnictides and monochalcogenides, composed of metallic, semiconducting and heavy fermion-like regions, and exhibiting valency transitions brought about by a complex interplay between ligand chemistry and lanthanide contraction. The calculations exploit the combined effect of a first-principles methodology, which can adequately describe the dual character of electrons, itinerant vs. localized, and high throughput computing made possible by the increasing available computational power. Our findings, including the predicted "intermediate valent" compounds SmO and TmSe, are in overall excellent agreement with the available experimental data. The accuracy of the approach, proven e.g. through the lattice parameters calculated to within 1.5% of the experimental values, and its ability to describe localization phenomena in solids, makes it a competitive atomistic simulation approach in the search for and design of new materials with specific physical properties and possible technological applications. △ Less

Submitted 8 December, 2010; originally announced December 2010.

Comments: 20 pages, 8 figures

Journal ref: New J. Phys. 12, 113041 (2010)

Electronic structure and ionicity of actinide oxides from first principles calculations

Authors: L. Petit, A. Svane, Z. Szotek, W. M. Temmerman, G. M. Stocks

Abstract: The ground state electronic structures of the actinide oxides AO, A2O3 and AO2 (A=U, Np, Pu, Am, Cm, Bk, Cf) are determined from first-principles calculations, using the self-interaction corrected local spin-density (SIC-LSD) approximation. Emphasis is put on the degree of f-electron localization, which for AO2 and A2O3 is found to follow the stoichiometry, namely corresponding to A(4+) ions in… ▽ More The ground state electronic structures of the actinide oxides AO, A2O3 and AO2 (A=U, Np, Pu, Am, Cm, Bk, Cf) are determined from first-principles calculations, using the self-interaction corrected local spin-density (SIC-LSD) approximation. Emphasis is put on the degree of f-electron localization, which for AO2 and A2O3 is found to follow the stoichiometry, namely corresponding to A(4+) ions in the dioxide and A(3+) ions in the sesquioxides. In contrast, the A(2+) ionic configuration is not favorable in the monoxides, which therefore become metallic. The energetics of the oxidation and reduction of the actinide dioxides is discussed, and it is found that the dioxide is the most stable oxide for the actinides from Np onwards. Our study reveals a strong link between preferred oxidation number and degree of localization which is confirmed by comparing to the ground state configurations of the corresponding lanthanide oxides. The ionic nature of the actinide oxides emerges from the fact that only those compounds will form where the calculated ground state valency agrees with the nominal valency expected from a simple charge counting. △ Less

Submitted 12 August, 2009; originally announced August 2009.

Comments: 12 pages, 6 figures

Groundstate electronic structure of actinide carbides and nitrides

Authors: L. Petit, A. Svane, Z. Szotek, W. M. Temmerman, G. M. Stocks

Abstract: The self-interaction corrected (SIC) local spin-density approximation (LSD) is used to investigate the groundstate valency configuration of the actinide ions in the actinide mono-carbides, AC (A = U, Np, Pu, Am, Cm), and the actinide mono-nitrides, AN. The electronic structure is characterized by a gradually increasing degree of f-electron localization from U to Cm, with the tendency towards loc… ▽ More The self-interaction corrected (SIC) local spin-density approximation (LSD) is used to investigate the groundstate valency configuration of the actinide ions in the actinide mono-carbides, AC (A = U, Np, Pu, Am, Cm), and the actinide mono-nitrides, AN. The electronic structure is characterized by a gradually increasing degree of f-electron localization from U to Cm, with the tendency towards localization being slightly stronger in the (more ionic) nitrides compared to the (more covalent) carbides. The itinerant band-picture is found to be adequate for UC and acceptable for UN, whilst a more complex manifold of competing localized and delocalized f-electron configurations underlies the groundstates of NpC, PuC, AmC, NpN, and PuN. The fully localized 5f-electron configuration is realized in CmC (f7), CmN (f7), and AmN (f6). The observed sudden increase in lattice parameter from PuN to AmN is found to be related to the localization transition. The calculated valence electron densities of states are in good agreement with photoemission data. △ Less

Submitted 28 April, 2009; originally announced April 2009.

Comments: 8 pages, 6 figures, 1 table

First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN semiconductors

Authors: T. C. Schulthess, W. M. Temmerman, Z. Szotek, A. Svane, L. Petit

Abstract: We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic… ▽ More We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments. △ Less

Submitted 13 October, 2006; originally announced October 2006.

Comments: 25 pages, 3 figures, 2 tables

Pressure Induced Valence Transitions in f-Electron Systems

Authors: W. M. Temmerman, A. Svane, L. Petit, M. Lueders, P. Strange, Z. Szotek

Abstract: A review is given of pressure induced valence transitions in f-electron systems calculated with the self-interaction corrected local spin density (SIC-LSD) approximation. These calculations show that the SIC-LSD is able to describe valence changes as a function of pressure or chemical composition. An important finding is the dual character of the f-electrons as either localized or band-like. A f… ▽ More A review is given of pressure induced valence transitions in f-electron systems calculated with the self-interaction corrected local spin density (SIC-LSD) approximation. These calculations show that the SIC-LSD is able to describe valence changes as a function of pressure or chemical composition. An important finding is the dual character of the f-electrons as either localized or band-like. A finite temperature generalisation is presented and applied to the study of the p-T phase diagram of the alpha to gamma phase transition in Ce. △ Less

Submitted 10 October, 2006; originally announced October 2006.

Comments: 18 pages, 19 figures, 4 tables, review article

Self-interaction Corrected Local Spin Density Theory of 5f Electron Localization in Actindes

Authors: A. Svane, L. Petit, Z. Szotek, W. M. Temmerman

Abstract: The electronic structures of the actinide elements U, Np, Pu, Am, Cm and Bk are investigated within the self-interaction corrected local spin density approximation. This method allows to describe a dual character of the 5f electrons, some of which occupy localized and core-like states, while the remaining 5f electrons hybridize and form bands. Based on energetics the calculations predict delocal… ▽ More The electronic structures of the actinide elements U, Np, Pu, Am, Cm and Bk are investigated within the self-interaction corrected local spin density approximation. This method allows to describe a dual character of the 5f electrons, some of which occupy localized and core-like states, while the remaining 5f electrons hybridize and form bands. Based on energetics the calculations predict delocalization/paramagnetism in the early actinides, and localization/anti-ferromagnetism in the later actinides. The corresponding calculated equilibrium volumes are in agreement with the experimental values. For Pu and Am, the method wrongly predicts magnetic ordering, but we find that the paramagnetic state gives a better desciption of cohesive properties. Under compression, in the later actinides, a localization-delocalization transition happens gradually as more and more f electrons become band-like with decreasing volume. Pu is already at this transition point at ambient conditions. Delocalization sets in for Am and Bk at a compression of $V\sim 0.75V_0$, for Cm at $V\sim 0.60 V_0$, where V_0 is the equilibrium volume, and the transition is complete for $V\sim 0.4-0.5 V_0$ in these three elements. △ Less

Submitted 14 August, 2007; v1 submitted 5 October, 2006; originally announced October 2006.

Comments: 13 pages, 10 figures; revised manuscript

Ground-state valency and spin configuration of the Ni-ions in nickelates

Authors: L. Petit, G. M. Stocks, T. Egami, Z. Szotek, W. M. Temmerman

Abstract: The ab initio self-interaction-corrected local-spin-density approximation is used to study the electronic structure of both stoichiometric and non-stoichiometric nickelates. From total energy considerations it emerges that, in their ground-state, both LiNiO2 and NaNiO2 are insulators, with the Ni ion in the Ni3+ low spin state (6t2g 1eg) configuration. It is established that a substitution of a… ▽ More The ab initio self-interaction-corrected local-spin-density approximation is used to study the electronic structure of both stoichiometric and non-stoichiometric nickelates. From total energy considerations it emerges that, in their ground-state, both LiNiO2 and NaNiO2 are insulators, with the Ni ion in the Ni3+ low spin state (6t2g 1eg) configuration. It is established that a substitution of a number of Li/Na atoms by divalent impurities drives an equivalent number of Ni ions in the NiO2 layers from the JT-active trivalent low-spin state to the JT-inactive divalent state. We describe how the observed considerable di_erences between LiNiO2 and NaNiO2 can be explained through the creation of Ni2+ impurities in LiNiO2. The indications are that the random distribution of the Ni2+ impurities might be responsible for the destruction of the long-range orbital ordering in LiNiO2. △ Less

Submitted 31 August, 2006; originally announced August 2006.

Comments: 3 figures, 1 table

Electronic structure of normal and inverse spinel ferrites from first principles

Authors: Z. Szotek, W. M. Temmerman, D. Koedderitzsch, A. Svane, L. Petit, H. Winter

Abstract: We apply the self-interaction corrected local spin density %(SIC-LSD) approximation to study the electronic structure and magnetic properties of the spinel ferrites MnFe$_{2}$O$_{4}$, Fe$_{3}$O$_{4}$, CoFe$_{2}$O$_{4}$, and NiFe$_{2}$O$_{4}$. We concentrate on establishing the nominal valence of the transition metal elements and the ground state structure, based on the study of various valence s… ▽ More We apply the self-interaction corrected local spin density %(SIC-LSD) approximation to study the electronic structure and magnetic properties of the spinel ferrites MnFe$_{2}$O$_{4}$, Fe$_{3}$O$_{4}$, CoFe$_{2}$O$_{4}$, and NiFe$_{2}$O$_{4}$. We concentrate on establishing the nominal valence of the transition metal elements and the ground state structure, based on the study of various valence scenarios for both the inverse and normal spinel structures for all the systems. For both structures we find all the studied compounds to be insulating, but with smaller gaps in the normal spinel scenario. On the contrary, the calculated spin magnetic moments and the exchange splitting of the conduction bands are seen to increase dramatically when moving from the inverse spinel structure to the normal spinel kind. We find substantial orbital moments for NiFe$_{2}$O$_{4}$ and CoFe$_{2}$O$_{4}$. △ Less

Submitted 7 August, 2006; originally announced August 2006.

Comments: 12 pages, 4 figures and 11 tables

Valency Configuration of Transition Metal Impurities in ZnO

Authors: L. Petit, T. C. Schulthess, A. Svane, W. M. Temmerman, Z. Szotek, A. Janotti

Abstract: We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM = Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn1-xTMxO, the localized TM2+ configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furth… ▽ More We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM = Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn1-xTMxO, the localized TM2+ configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furthermore that the (+/0) donor level is situated in the ZnO gap. Consequently, for n-type conditions, with the Fermi energy eF close to the conduction band minimum, TM remains in the 2+ charge state, while for p-type conditions, with eF close to the valence band maximum, the 3+ charge state is energetically preferred. In the latter scenario, modeled here by co-doping with N, the additional delocalized d-electron charge transfers into the entire states at the top of the valence band, and hole carriers will only exist, if the N concentration exceeds the TM impurity concentration. △ Less

Submitted 15 June, 2006; originally announced June 2006.

Journal ref: Journal of ELECTRONIC MATERIALS, Vol. 35, No. 4, p 556 2006

Mott Transition of MnO under Pressure: Comparison of Correlated Band Theories

Authors: Deepa Kasinathan, J. Kunes, K. Koepernik, Cristian V. Diaconu, Richard L. Martin, Ionut Prodan, Gustavo E. Scuseria, Nicola Spaldin, L. Petit, T. C. Schulthess, W. E. Pickett

Abstract: The electronic structure, magnetic moment, and volume collapse of MnO under pressure are obtained from four different correlated band theory methods; local density approximation + Hubbard U (LDA+U), pseudopotential self-interaction correction (pseudo-SIC), the hybrid functional (combined local exchange plus Hartree-Fock exchange), and the local spin density SIC (SIC-LSD) method. Each method trea… ▽ More The electronic structure, magnetic moment, and volume collapse of MnO under pressure are obtained from four different correlated band theory methods; local density approximation + Hubbard U (LDA+U), pseudopotential self-interaction correction (pseudo-SIC), the hybrid functional (combined local exchange plus Hartree-Fock exchange), and the local spin density SIC (SIC-LSD) method. Each method treats correlation among the five Mn 3d orbitals (per spin), including their hybridization with three O $2p$ orbitals in the valence bands and their changes with pressure. The focus is on comparison of the methods for rocksalt MnO (neglecting the observed transition to the NiAs structure in the 90-100 GPa range). Each method predicts a first-order volume collapse, but with variation in the predicted volume and critical pressure. Accompanying the volume collapse is a moment collapse, which for all methods is from high-spin to low-spin (5/2 to 1/2), not to nonmagnetic as the simplest scenario would have. The specific manner in which the transition occurs varies considerably among the methods: pseudo-SIC and SIC-LSD give insulator-to-metal, while LDA+U gives insulator-to-insulator and the hybrid method gives an insulator-to-semimetal transition. Projected densities of states above and below the transition are presented for each of the methods and used to analyze the character of each transition. In some cases the rhombohedral symmetry of the antiferromagnetically ordered phase clearly influences the character of the transition. △ Less

Submitted 4 October, 2006; v1 submitted 17 May, 2006; originally announced May 2006.

Comments: 14 pages, 9 figures. A 7 institute collaboration, Updated version

Electronic structure of rare-earth impurities in GaAs and GaN

Authors: A. Svane, N. E. Christensen, L. Petit, Z. Szotek, W. M. Temmerman

Abstract: The electronic structures of substitutional rare-earth (RE) impurities in GaAs and cubic GaN are calculated. The total energy is evaluated with the self-interaction corrected local spin density approximation, by which several configurations of the open 4f shell of the rare-earth ion may be investigated. The defects are modelled by supercells of type REGa$_{n-1}$As$_n$, for n=4, 8 and 16. The pre… ▽ More The electronic structures of substitutional rare-earth (RE) impurities in GaAs and cubic GaN are calculated. The total energy is evaluated with the self-interaction corrected local spin density approximation, by which several configurations of the open 4f shell of the rare-earth ion may be investigated. The defects are modelled by supercells of type REGa$_{n-1}$As$_n$, for n=4, 8 and 16. The preferred defect is the rare-earth substituting Ga, for which case the rare-earth valency in intrinsic material is found to be trivalent in all cases except Ce and Pr in GaN. The 3+ --> 2+ f-level is found above the theoretical conduction band edge in all cases and within the experimental gap only for Eu, Tm and Yb in GaAs and for Eu in GaN. The exchange interaction of the rare-earth impurity with the states at both the valence band maximum and the conduction band minimum is weak, one to two orders of magnitude smaller than that of Mn impurities. Hence the coupling strength is insufficient to allow for ferromagnetic ordering of dilute impurities, except at very low temperatures. △ Less

Submitted 10 March, 2006; originally announced March 2006.

Comments: 12 pages, 10 figures

First principles study of rare-earth oxides

Authors: L. Petit, A. Svane, Z. Szotek, W. M. Temmerman

Abstract: The self-interaction-corrected local-spin-density approximation is used to describe the electronic structure of dioxides, REO$_2$, and sesquioxides, RE$_2$O$_3$, for the rare earths, RE=Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy and Ho. The valencies of the rare earth ions are determined from total energy minimization. We find Ce, Pr, Tb in their dioxides to have the tetravalent configuration, while for… ▽ More The self-interaction-corrected local-spin-density approximation is used to describe the electronic structure of dioxides, REO$_2$, and sesquioxides, RE$_2$O$_3$, for the rare earths, RE=Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy and Ho. The valencies of the rare earth ions are determined from total energy minimization. We find Ce, Pr, Tb in their dioxides to have the tetravalent configuration, while for all the sesquioxides the trivalent groundstate configuration is found to be the most favourable. The calculated lattice constants for these valency configurations are in good agreement with experiment. Total energy considerations are exploited to show the link between oxidation and $f$-electron delocalization, and explain why, among the dioxides, only the CeO$_2$, PrO$_2$, and TbO$_2$ exist in nature. Tetravalent NdO$_2$ is predicted to exist as a metastable phase - unstable towards the formation of hexagonal Nd$_2$O$_3$. △ Less

Submitted 29 March, 2005; originally announced March 2005.

Comments: 22 pages, 4 tables, 7 figures

Electronic structure of transition metal impurities in p-type ZnO

Authors: L. Petit, T. C. Schulthess, A. Svane, Z. Szotek, W. M. Temmerman, A. Janotti

Abstract: The self-interaction corrected local spin-density approximation is used to investigate the ground-state valency configuration of transition metal (TM=Mn, Co) impurities in p-type ZnO. Based on the total energy considerations, we find a stable localised TM$^{2+}$ configuration for a TM impurity in ZnO if no additional hole donors are present. Our calculations indicate that the (+/0) donor level i… ▽ More The self-interaction corrected local spin-density approximation is used to investigate the ground-state valency configuration of transition metal (TM=Mn, Co) impurities in p-type ZnO. Based on the total energy considerations, we find a stable localised TM$^{2+}$ configuration for a TM impurity in ZnO if no additional hole donors are present. Our calculations indicate that the (+/0) donor level is situated in the band gap, as a consequence of which the TM$^{3+}$ becomes more favourable in p-type ZnO, where the Fermi level is positioned at the top of the valence band. When co-doping with N, it emerges that the carrier-mediated ferromagnetism can be realized in the scenario where the N concentration exceeds the TM impurity concentration. If TM and N concentrations are equal, the shallow acceptor levels introduced by N are fully compensated by delocalised TM d-electrons. △ Less

Submitted 25 October, 2004; originally announced October 2004.

Comments: 11 pages, 2 figures and 1 table

Electronic Structure of Samarium Monopnictides and Monochalcogenides

Authors: A. Svane, V. Kanchana, G. Vaitheeswaran, G. Santi, W. M. Temmerman, Z. Szotek, P. Strange, L. Petit

Abstract: The electronic structures of SmX (X=N, P, As, Sb, Bi, O, S, Se, Te, Po)compounds are calculated using the self-interaction corrected local-spin density approximation. The Sm ion is described with either five or six localized $f$-electrons while the remaining electrons form bands, and the total energies of these scenarios are compared. With five localized $f$-electrons a narrow $f$-band is formed… ▽ More The electronic structures of SmX (X=N, P, As, Sb, Bi, O, S, Se, Te, Po)compounds are calculated using the self-interaction corrected local-spin density approximation. The Sm ion is described with either five or six localized $f$-electrons while the remaining electrons form bands, and the total energies of these scenarios are compared. With five localized $f$-electrons a narrow $f$-band is formed in the vicinity of the Fermi level leading to an effective intermediate valence. This scenario is the ground state of all the pnictides as well as SmO. With six localized $f$-electrons, the chalcogenides are semiconductors, which is the ground state of SmS, SmSe and SmTe. Under compression the Sm chalcogenides undergo first order transitions with destabilization of the $f$ states into the intermediate valence state, the bonding properties of which are well reproduced by the present theory. △ Less

Submitted 14 July, 2004; originally announced July 2004.

Comments: 13 pages, 7 figures

Self-interaction Corrected Calculations of Correlated f-electron Systems

Authors: L. Petit, A. Svane, Z. Szotek, W. M. Temmerman

Abstract: The electronic structures of several actinide solid systems are calculated using the self-interaction corrected local spin density approximation. Within this scheme the $5f$ electron manifold is considered to consist of both localized and delocalized states, and by varying their relative proportions the energetically most favourable (groundstate) configuration can be established. Specifically, w… ▽ More The electronic structures of several actinide solid systems are calculated using the self-interaction corrected local spin density approximation. Within this scheme the $5f$ electron manifold is considered to consist of both localized and delocalized states, and by varying their relative proportions the energetically most favourable (groundstate) configuration can be established. Specifically, we discuss elemental Pu in its $δでるた$-phase, PuO$_2$ and the effects of addition of oxygen, the series of actinide monopnictides and monochalcogenides, and the UX$_3$, X= Rh, Pd, Pt, Au, intermetallic series. △ Less

Submitted 30 October, 2003; originally announced October 2003.

Comments: 16 pages, 5 figures

Journal ref: Molecular Physics Reports 38, 20-29 (2003)

Ab initio charge, spin and orbital energy scales in LaMnO3

Authors: R. Tyer, W. M. Temmerman, Z. Szotek, G. Banach, A. Svane, L. Petit, G. A. Gehring

Abstract: The first-principles SIC-LSD theory is utilized to study electronic, magnetic and orbital phenomena in LaMnO$_{3}$. The correct ground state is found, which is antiferro orbitally ordered with the spin magnetic moments antiferromagnetically aligned. Jahn-Teller energies are found to be the largest energy scale. In addition it is the Jahn-Teller interaction which is the dominant effect in realisi… ▽ More The first-principles SIC-LSD theory is utilized to study electronic, magnetic and orbital phenomena in LaMnO$_{3}$. The correct ground state is found, which is antiferro orbitally ordered with the spin magnetic moments antiferromagnetically aligned. Jahn-Teller energies are found to be the largest energy scale. In addition it is the Jahn-Teller interaction which is the dominant effect in realising orbital order, and the electronic effects alone do not suffice. △ Less

Submitted 28 March, 2003; originally announced March 2003.

Comments: 4 pages, 3 figures

Journal ref: Europhys. Lett. 65 519-525 (2004)

Electronic structure of half-metallic double perovskites

Authors: Z. Szotek, W. M. Temmerman, A. Svane, L. Petit, H. Winter

Abstract: We present the self-interaction corrected local spin density (SIC-LSD) electronic structure and total energy calculations, leading also to valencies of the ground state configurations, for the half-metallic double perovskites such as Sr$_{2}$FeMoO$_{6}$, Ba$_{2}$FeMoO$_{6}$, Ca$_{2}$FeMoO$_{6}$, and Ca$_{2}$FeReO$_{6}$. We conclude that the Fe and Mo (or Re) spin magnetic moments are anti-parall… ▽ More We present the self-interaction corrected local spin density (SIC-LSD) electronic structure and total energy calculations, leading also to valencies of the ground state configurations, for the half-metallic double perovskites such as Sr$_{2}$FeMoO$_{6}$, Ba$_{2}$FeMoO$_{6}$, Ca$_{2}$FeMoO$_{6}$, and Ca$_{2}$FeReO$_{6}$. We conclude that the Fe and Mo (or Re) spin magnetic moments are anti-parallel aligned, and the magnitude of the hybridization induced moment on Mo does not vary much between the different compounds. The hybridization spin magnetic moment on Re is of the order of -1.1 $μみゅー_{B}$, while that on Mo is about -0.4 $μみゅー_{B}$, independently of the alkaline earth element. Also the electronic structure of all the compounds studied is very similar, with a well defined gap in the majority spin component and metallic density of states for the minority spin component, with highly hybridized Fe, Mo (or Re), and oxygen bands. △ Less

Submitted 18 February, 2003; originally announced February 2003.

Comments: 6 pages, 2 figures

Journal ref: Phys. Rev. B68, 104411 (2003)

Ab initio study of charge order in Fe3O4

Authors: Z. Szotek, W. M. Temmerman, A. Svane, L. Petit, G. M. Stocks, H. Winter

Abstract: We present a self-interaction corrected local spin density (SIC-LSD) study of the electronic structure and possible charge order of magnetite, Fe$_{3}$O$_{4}$. The issue of charge order in magnetite is explored in both cubic and orthorhombic structures, the latter being an approximation to the true, low temperature, monoclinic structure. We find that the Verwey charge ordered phase is not the gr… ▽ More We present a self-interaction corrected local spin density (SIC-LSD) study of the electronic structure and possible charge order of magnetite, Fe$_{3}$O$_{4}$. The issue of charge order in magnetite is explored in both cubic and orthorhombic structures, the latter being an approximation to the true, low temperature, monoclinic structure. We find that the Verwey charge ordered phase is not the groundstate solution for this compound neither in cubic nor orthorhombic structure. △ Less

Submitted 6 February, 2004; v1 submitted 12 February, 2003; originally announced February 2003.

Comments: 11 page, 4 figures

Journal ref: Phys. Rev. B 68 054415 (2003)

Ab-initio determination of the localized/delocalized f-manifold in UPd_2Al_3

Authors: L. Petit, A. Svane, W. M. Temmerman, Z. Szotek, R. Tyer

Abstract: The electronic structure of UPd_2Al_3 is described using the self-interaction corrected local-spin-density approximation to density functional theory. The groundstate is found to be characterized by the coexistence of localized (f^2) and delocalized U f electrons, in agreement with experimental evidence. We observe significant difference in electronic structure between UPd_2Al_3 and the previous… ▽ More The electronic structure of UPd_2Al_3 is described using the self-interaction corrected local-spin-density approximation to density functional theory. The groundstate is found to be characterized by the coexistence of localized (f^2) and delocalized U f electrons, in agreement with experimental evidence. We observe significant difference in electronic structure between UPd_2Al_3 and the previously studied UPt_3 compound. Even though a trend towards localization exists in UPt_3, the total energies and the density of states at the Fermi level favor a groundstate with localized f^1, rather than f^2 U ions. △ Less

Submitted 14 January, 2003; originally announced January 2003.

Journal ref: Europhys. Lett. 62, 391 (2003)

Investigating liquid surfaces down to the nanometer scale using grazing incidence x-ray scattering

Authors: C. Fradin, A. Braslau, D. Luzet, M. Alba, C. Gourier, J. Daillant, G. Gruebel, G. Vignaud, J. -F. Legrand, J. Lal J. -M. Petit, F. Rieutord

Abstract: Grazing incidence x-ray surface scattering has been used to investigate liquid surfaces down to the molecular scale. The free surface of water is well described by the capillary wave model (<z(q)z(-q)> ~ q-2 spectrum) up to wavevectors > 10^8 m^-1. At larger wavevectors near-surface acoustic waves must be taken into account. When the interface is bounded by a surfactant monolayer, it exhibits a… ▽ More Grazing incidence x-ray surface scattering has been used to investigate liquid surfaces down to the molecular scale. The free surface of water is well described by the capillary wave model (<z(q)z(-q)> ~ q-2 spectrum) up to wavevectors > 10^8 m^-1. At larger wavevectors near-surface acoustic waves must be taken into account. When the interface is bounded by a surfactant monolayer, it exhibits a bending stiffness and the bending rigidity modulus can be measured. However, bending effects generally cannot be described using the Helfrich Hamiltonian and the characteristic exponent in the roughness power spectrum can smaller than 4. Finally, upon compression, tethered monolayers formed on a subphase containing divalent ions are shown to buckle in the third dimension with a characteristic wavelength on the order of 10^8 m^-1. △ Less

Submitted 22 August, 1997; originally announced August 1997.