NV microscopy of thermally controlled stresses caused by Cr$_2$O$_3$ thin films
Authors:
Andris Berzins,
Janis Smits,
Andrejs Petruhins,
Roberts Rimsa,
Gatis Mozolevskis,
Martins Zubkins,
Ilja Fescenko
Abstract:
Many modern applications, including quantum computing and quantum sensing, use substrate-film interfaces. Particularly, thin films of chromium or titanium and their oxides are commonly used to bind various structures, such as resonators, masks, or microwave antennas, to a diamond surface. Due to different thermal expansions of involved materials, such films and structures could produce significant…
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Many modern applications, including quantum computing and quantum sensing, use substrate-film interfaces. Particularly, thin films of chromium or titanium and their oxides are commonly used to bind various structures, such as resonators, masks, or microwave antennas, to a diamond surface. Due to different thermal expansions of involved materials, such films and structures could produce significant stresses, which need to be measured or predicted. In this paper, we demonstrate imaging of stresses in the top layer of diamond with deposited structures of Cr$_2$O$_3$ at temperatures 19$^{\circ}$C and 37$^{\circ}$C by using stress-sensitive optically detected magnetic resonances (ODMR) in NV centers. We also calculated stresses in the diamond-film interface by using finite-element analysis and correlated them to measured ODMR frequency shifts. As predicted by the simulation, the measured high-contrast frequency-shift patterns are only due to thermal stresses, whose spin-stress coupling constant along the NV axis is 21$\pm$1 MHz/GPa, that is in agreement with constants previously obtained from single NV centers in diamond cantilever. We demonstrate that NV microscopy is a convenient platform for optically detecting and quantifying spatial distributions of stresses in diamond-based photonic devices with micrometer precision and propose thin films as a means for local application of temperature-controlled stresses. Our results also show that thin film structures produce significant stresses in diamond substrates, which should be accounted for in NV-based applications.
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Submitted 9 February, 2023; v1 submitted 25 November, 2021;
originally announced November 2021.
Deposition of MAX phase containing thin films from a (Ti,Zr)2AlC compound target
Authors:
Clio Azina,
Bensu Tunca,
Andrejs Petruhins,
Binbin Xin,
Melike Yildizhan,
Per O. Å. Persson,
Jozef Vleugels,
Konstantina Lambrinou,
Johanna Rosén,
Per Eklund
Abstract:
This work reports on sputter depositions carried out from a compound (Ti,Zr)2AlC target, whereupon Al-containing (Ti,Zr)C thin films (30-40 nm in thickness) were deposited on MgO(111) and Al2O3(0001) substrates at temperatures ranging between 500 and 900 °C. The presence of Al within the carbide structure was evidenced by lattice parameter variations. Furthermore, chemical analyses showed that the…
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This work reports on sputter depositions carried out from a compound (Ti,Zr)2AlC target, whereupon Al-containing (Ti,Zr)C thin films (30-40 nm in thickness) were deposited on MgO(111) and Al2O3(0001) substrates at temperatures ranging between 500 and 900 °C. The presence of Al within the carbide structure was evidenced by lattice parameter variations. Furthermore, chemical analyses showed that the Al distribution throughout the film thickness was fairly homogeneous. Thicker films (80-90 nm) deposited from the same compound target consisted of the pseudo-binary (Ti,Zr)C and intermetallic compounds in the Ti-Zr-Al system up to 800 °C, as well as solid solution MAX phases with different Ti:Zr ratios at 900 °C. X-ray diffraction and transmission electron microscopy showed that both (Ti,Zr)2AlC and (Ti,Zr)3AlC2 solid solution MAX phases were formed. Moreover, this work discusses the growth mechanism of the thicker films, which started with the formation of the mixed (Ti,Zr)C carbide, followed by the nucleation and growth of aluminides, eventually leading to the formation of the MAX phases, which was the primary objective of the sputter depositions.
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Submitted 12 August, 2020; v1 submitted 9 September, 2019;
originally announced September 2019.
