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Thermally-generated spin current in the topological insulator Bi$_2$Se$_3$
Authors:
Rakshit Jain,
Max Stanley,
Arnab Bose,
Anthony R. Richardella,
Xiyue S. Zhang,
Timothy Pillsbury,
David A. Muller,
Nitin Samarth,
Daniel C. Ralph
Abstract:
We complete measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents in the topological insulator Bi$_2$Se$_3$ by quantifying the efficiency with which thermal gradients can generate transverse spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnesistance for bilayers of Bi$_2$Se$_3$/CoFeB. We…
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We complete measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents in the topological insulator Bi$_2$Se$_3$ by quantifying the efficiency with which thermal gradients can generate transverse spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnesistance for bilayers of Bi$_2$Se$_3$/CoFeB. We find that Bi$_2$Se$_3$ does generate substantial thermally-driven spin currents. A lower bound for the ratio of spin current to thermal gradient is $J_s/\nabla_x T$ = (4.9 $\pm$ 0.9) $\times$ 10$^{6}$ ($\hbar/2e$) A m$^{-2}$ / K $μ$m$^{-1}$, and a lower bound for the magnitude of the spin Nernst ratio is $-$0.61 $\pm$ 0.11. The spin Nernst ratio for Bi$_2$Se$_3$ is the largest among all materials measured to date, 2-3 times larger compared to previous measurements for the heavy metals Pt and W.
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Submitted 11 October, 2022;
originally announced October 2022.
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ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics
Authors:
Yongxi Ou,
Wilson Yanez,
Run Xiao,
Max Stanley,
Supriya Ghosh,
Boyang Zheng,
Wei Jiang,
Yu-Sheng Huang,
Timothy Pillsbury,
Anthony Richardella,
Chaoxing Liu,
Tony Low,
Vincent H. Crespi,
K. Andre Mkhoyan,
Nitin Samarth
Abstract:
The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fu…
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The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.
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Submitted 16 November, 2021; v1 submitted 18 July, 2021;
originally announced July 2021.
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Spin and charge interconversion in Dirac semimetal thin films
Authors:
Wilson Yanez,
Yongxi Ou,
Run Xiao,
Jahyun Koo,
Jacob T. Held,
Supriya Ghosh,
Jeffrey Rable,
Timothy Pillsbury,
Enrique Gonzalez Delgado,
Kezhou Yang,
Juan Chamorro,
Alexander J. Grutter,
Patrick Quarterman,
Anthony Richardella,
Abhronil Sengupta,
Tyrel McQueen,
Julie A. Borchers,
K. Andre Mkhoyan,
Binghai Yan,
Nitin Samarth
Abstract:
We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pumping. Analysis of the symmetric and anti-symmetric compone…
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We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pumping. Analysis of the symmetric and anti-symmetric components of the mixing voltage in spin torque ferromagnetic resonance and the frequency and power dependence of the spin pumping signal show that the behavior of these processes is consistent with previously reported spin-charge interconversion mechanisms in heavy metals, topological insulators, and Weyl semimetals. We find that the efficiency of spin-charge interconversion in Cd3As2/permalloy bilayers can be comparable to that in heavy metals. We discuss the underlying mechanisms by comparing our results with first principles calculations.
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Submitted 28 February, 2021;
originally announced March 2021.
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Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator
Authors:
Peng Li,
Jinjun Ding,
Steven S. -L. Zhang,
James Kally,
Timothy Pillsbury,
Olle G. Heinonen,
Gaurab Rimal,
Chong Bi,
August DeMann,
Stuart B. Field,
Weigang Wang,
Jinke Tang,
J. S. Jiang,
Axel Hoffmann,
Nitin Samarth,
Mingzhong Wu
Abstract:
A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that ha…
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A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T=2-3 K and an AHE at T=80-300 K. Over T=3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to an interfacial DMI interaction. The DMI strength estimated is substantially higher than that in heavy metal-based systems.
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Submitted 16 December, 2020;
originally announced December 2020.
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Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator
Authors:
Tao Liu,
James Kally,
Timothy Pillsbury,
Chuanpu Liu,
Houchen Chang,
Jinjun Ding,
Yang Cheng,
Maria Hilse,
Roman Engel-Herbert,
Anthony Richardella,
Nitin Samarth,
Mingzhong Wu
Abstract:
This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y3Fe5O12. Such TSS-induced c…
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This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y3Fe5O12. Such TSS-induced changes become more pronounced as the temperature decreases from 300 K to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.
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Submitted 6 June, 2020;
originally announced June 2020.
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Spin-valley locking, bulk quantum Hall effect and chiral surface state in a noncentrosymmetric Dirac semimetal BaMnSb$_2$
Authors:
J. Y. Liu,
J. Yu,
J. L. Ning,
H. M. Yi,
L. Miao,
L. J. Min,
Y. F. Zhao,
W. Ning,
K. A. Lopez,
Y. L. Zhu,
T. Pillsbury,
Y. B. Zhang,
Y. Wang,
J. Hu,
H. B. Cao,
F. Balakirev,
F. Weickert,
M. Jaime,
Y. Lai,
Kun Yang,
J. W. Sun,
N. Alem,
V. Gopalan,
C. Z. Chang,
N. Samarth
, et al. (3 additional authors not shown)
Abstract:
Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently co…
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Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy and quantum transport measurements. Moreover, this material also exhibits a stacked quantum Hall effect. The spin-valley degeneracy extracted from the plateau height of quantized Hall resistivity is close to 2. This result, together with the observed Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we have also observed a two-dimensional chiral metal at the side surface, which represents a novel topological quantum liquid. These findings establish BaMnSb$_2$ as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.
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Submitted 4 November, 2020; v1 submitted 14 July, 2019;
originally announced July 2019.
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Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$
Authors:
Seng Huat Lee,
Yanglin Zhu,
Yu Wang,
Leixin Miao,
Timothy Pillsbury,
Susan Kempinger,
David Graf,
Nasim Alem,
Cui-Zu Chang,
Nitin Samarth,
Zhiqiang Mao
Abstract:
$\mathrm{MnBi_2Te_4}…
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$\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We performed comprehensive studies on the structure, nontrivial surface state and magnetotransport properties of this material. Our results reveal an intrinsic anomalous Hall effect arising from a non-collinear spin structure for the magnetic field parallel to the $c$-axis. We also observed remarkable negative magnetoresistance under arbitrary field orientation below and above the Neel temperature (T$_N$), providing clear evidence for strong spin fluctuation-driven spin scattering in both the AFM and paramagnetic states. Further, we found that the nontrivial surface state opens a large gap (~85 meV) even at temperatures far above T$_N$ = 25K. These findings demonstrate that the bulk band structure of $\mathrm{MnBi_2Te_4}$ is strongly coupled to the magnetic structure and that a net Berry curvature in momentum space can be created in a canted AFM state. In addition, our results imply that the gap opening in the surface states is intrinsic, likely caused by the strong spin fluctuations near the surface layers.
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Submitted 2 December, 2018;
originally announced December 2018.
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Helicity dependent photocurrent in electrically gated (Bi,Sb)_2Te_3 thin films
Authors:
Yu Pan,
Qing-Ze Wang,
Andrew L. Yeats,
Timothy Pillsbury,
Thomas C. Flanagan,
Anthony Richardella,
Haijun Zhang,
David D. Awschalom,
Chao-Xing Liu,
Nitin Samarth
Abstract:
Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that excite electrons to states far above the spin-momentum locked Dirac cone and the underlying mechanism for the helicity-dependent photocurrent is still not understood…
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Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that excite electrons to states far above the spin-momentum locked Dirac cone and the underlying mechanism for the helicity-dependent photocurrent is still not understood. We resolve the puzzle through a comprehensive study of the helicity-dependent photocurrent in (Bi,Sb)_2Te_3 thin films as a function of the incidence angle of the optical excitation, its wavelength, and the gate-tuned chemical potential. Our observations allow us to unambiguously identify the circular photo-galvanic effect as the dominant mechanism for the helicity-dependent photocurrent. Additionally, we use an analytical calculation to relate the directional nature of the photocurrent to asymmetric optical transitions between the topological surface states and bulk bands. The insights we obtain are important for engineering opto-spintronic devices that rely on optical steering of spin and charge currents.
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Submitted 13 June, 2017;
originally announced June 2017.
