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Interplay Between Mixed and Pure Exciton States Controls Singlet Fission in Rubrene Single Crystals
Authors:
Dmitry R. Maslennikov,
Marios Maimaris,
Haoqing Ning,
Xijia Zheng,
Navendu Mondal,
Vladimir V. Bruevich,
Saied Md Pratik,
Andrew J. Musser,
Vitaly Podzorov,
Jean-Luc Bredas,
Veaceslav Coropceanu,
Artem A. Bakulin
Abstract:
Singlet fission (SF) is a multielectron process in which one singlet exciton S converts into a pair of triplet excitons T+T. SF is widely studied as it may help overcome the Shockley-Queisser efficiency limit for semiconductor photovoltaic cells. To elucidate and control the SF mechanism, great attention has been given to the identification of intermediate states in SF materials, which often appea…
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Singlet fission (SF) is a multielectron process in which one singlet exciton S converts into a pair of triplet excitons T+T. SF is widely studied as it may help overcome the Shockley-Queisser efficiency limit for semiconductor photovoltaic cells. To elucidate and control the SF mechanism, great attention has been given to the identification of intermediate states in SF materials, which often appear elusive due to the complexity and fast timescales of the SF process. Here, we apply 10fs-1ms transient absorption techniques to high-purity rubrene single crystals to disentangle the intrinsic fission dynamics from the effects of defects and grain boundaries and to identify reliably the fission intermediates. We show that above-gap excitation directly generates a hybrid vibronically assisted mixture of singlet state and triplet-pair multiexciton [S:TT], which rapidly (<100fs) and coherently branches into pure singlet or triplet excitations. The relaxation of [S:TT] to S is followed by a relatively slow and temperature-activated (48 meV activation energy) incoherent fission process. The SF competing pathways and intermediates revealed here unify the observations and models presented in previous studies of SF in rubrene and propose alternative strategies for the development of SF-enhanced photovoltaic materials.
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Submitted 21 August, 2023;
originally announced August 2023.
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Local ultra-densification of single-walled carbon nanotube films: modeling and experiment
Authors:
Artem K. Grebenko,
Grigorii Drozdov,
Yuriy G. Gladush,
Igor Ostanin,
Sergey S. Zhukov,
Aleksandr V. Melentyev,
Eldar M. Khabushev,
Alexey P. Tsapenko,
Dmitry V. Krasnikov,
Boris Afinogenov,
Alexei G. Temiryazev,
Viacheslav V. Dremov,
Traian Dumitricã,
Mengjun Li,
Hussein Hijazi,
Vitaly Podzorov,
Leonard C. Feldman,
Albert G. Nasibulin
Abstract:
Fabrication of nanostructured metasurfaces poses a significant technological and fundamental challenge. Despite developing novel systems that support reversible elongation and distortion, their nanoscale patterning and control of optical properties remain an open problem. Herein we report the atomic force microscope lithography (AFML) application for nanoscale patterning of single-walled carbon na…
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Fabrication of nanostructured metasurfaces poses a significant technological and fundamental challenge. Despite developing novel systems that support reversible elongation and distortion, their nanoscale patterning and control of optical properties remain an open problem. Herein we report the atomic force microscope lithography (AFML) application for nanoscale patterning of single-walled carbon nanotube films and the associated reflection coefficient tuning. We present models of bundling reorganization, formed-pattern stability, and energy distribution describing mechanical behavior with mesoscopic distinct element method (MDEM). All observed and calculated phenomena support each other and present a platform for developing AFML patterned optical devices using meshy nanostructured matter.
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Submitted 12 March, 2022;
originally announced March 2022.
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The intrinsic (trap-free) transistors based on perovskite single crystals with self-passivated surfaces
Authors:
V. Bruevich,
L. Kasaei,
S. Rangan,
H. Hijazi,
Z. Zhang,
T. Emge,
E. Andrei,
R. A. Bartynski,
L. C. Feldman,
V. Podzorov
Abstract:
Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental and applied research on charge transport properties of this class of materials, has proven challenging. Here we demonstrate high-performance perovskite FETs bas…
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Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental and applied research on charge transport properties of this class of materials, has proven challenging. Here we demonstrate high-performance perovskite FETs based on epitaxial, single crystalline thin films of cesium lead bromide (CsPbBr3). An improved vapor-phase epitaxy has allowed growing truly large-area, atomically flat films of this perovskite with excellent structural and surface properties. FETs based on these CsPbBr3 films exhibit textbook transistor characteristics, with a very low hysteresis and high intrinsic charge carrier mobility. Availability of such high-performance devices has allowed the study of Hall effect in perovskite FETs for the first time. Our magneto-transport measurements show that the charge carrier mobility of CsPbBr3 FETs increases on cooling, from ~ 30 cm2V-1s-1 at room temperature, to ~ 250 cm2V-1s-1 at 50 K, exhibiting a band transport mostly limited by phonon scattering. The epitaxial growth and FET fabrication methodologies described here can be naturally extended to other perovskites, including the hybrid ones, thus representing a technological leap forward, overcoming the performance bottleneck in research on perovskite FETs.
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Submitted 24 December, 2021;
originally announced December 2021.
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Experimental demonstration of correlated flux scaling in photoconductivity and photoluminescence of lead-halide perovskites
Authors:
Hee Taek Yi,
Pavel Irkhin,
Prakriti P. Joshi,
Yuri N. Gartstein,
Xiaoyang Zhu,
Vitaly Podzorov
Abstract:
Lead-halide perovskites attracted attention as materials for high-efficiency solar cells and light emitting applications. Among their attributes are solution processability, high absorbance in the visible spectral range and defect tolerance, as manifested in long photocarrier lifetimes and diffusion lengths. The microscopic origin of photophysical properties of perovskites is, however, still uncle…
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Lead-halide perovskites attracted attention as materials for high-efficiency solar cells and light emitting applications. Among their attributes are solution processability, high absorbance in the visible spectral range and defect tolerance, as manifested in long photocarrier lifetimes and diffusion lengths. The microscopic origin of photophysical properties of perovskites is, however, still unclear and under debate. Here, we have observed an interesting universal scaling behavior in a series of (hybrid and all-inorganic) perovskite single crystals investigated via simultaneous measurements of the Hall effect, photoconductivity and photoluminescence. A clear correlation between photoconductivity and photoluminescence as functions of the incident photon flux is observed. While photoconductivity exhibits a crossover in the power-law dependence between power exponents 1 and 1/2, photoluminescence exhibits a crossover between power exponents 2 and 3/2. This correlation is found in all the studied compounds irrespective of the cation type (organic or inorganic) or crystallographic phases. We propose phenomenological microscopic mechanisms that explain these interesting non-trivial power exponents and crossovers between them in this broad class of lead-halide perovskites.
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Submitted 30 March, 2018;
originally announced April 2018.
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Charge carrier coherence and Hall effect in organic semiconductors
Authors:
H. T. Yi,
Y. Gartstein,
V. Podzorov
Abstract:
Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in…
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Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model explains the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.
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Submitted 21 January, 2016;
originally announced January 2016.
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Steady-state photoconductivity and multi-particle interactions in rubrene single crystals
Authors:
P. Irkhin,
H. Najafov,
V. Podzorov
Abstract:
We demonstrate that photoconductivity of pristine rubrene crystals exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and 1/4. We show that this photocurrent is generated almost exclusively at the surface of pristine rubrene crystals, while the bulk photocur…
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We demonstrate that photoconductivity of pristine rubrene crystals exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and 1/4. We show that this photocurrent is generated almost exclusively at the surface of pristine rubrene crystals, while the bulk photocurrent is dramatically smaller and follows a different set of exponents, 1 and 1/2. A model based on exciton fission, fusion and triplet-charge quenching is developed to describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors.
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Submitted 29 January, 2015;
originally announced January 2015.
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Infrared signatures of high carrier densities induced in semiconducting poly(3-hexylthiophene) by fluorinated organosilane molecules
Authors:
Omar Khatib,
Bumsu Lee,
Jonathan D. Yuen,
Zhiqiang Li,
Massimiliano Di Ventra,
Alan J. Heeger,
Vitaly Podzorov,
Dimitri N. Basov
Abstract:
We report on infrared (IR) absorption and dc electrical measurements of thin films of poly(3-hexylthiophene) (P3HT) that have been modified by a fluoroalkyl trichlorosilane (FTS). Spectra for FTS-treated films were compared to data for electrostatically-doped P3HT in an organic field-effect transistor (OFET). The appearance of a prominent polaron band in mid-IR absorption data for FTS-treated P3HT…
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We report on infrared (IR) absorption and dc electrical measurements of thin films of poly(3-hexylthiophene) (P3HT) that have been modified by a fluoroalkyl trichlorosilane (FTS). Spectra for FTS-treated films were compared to data for electrostatically-doped P3HT in an organic field-effect transistor (OFET). The appearance of a prominent polaron band in mid-IR absorption data for FTS-treated P3HT supports the assertion of hole doping via a charge-transfer process between FTS molecules and P3HT. In highly-doped films with a significantly enhanced polaron band, we find a monotonic Drude-like absorption in the far-IR, signifying delocalized states. Utilizing a simple capacitor model of an OFET, we extracted a carrier density for FTS-treated P3HT from the spectroscopic data. With carrier densities reaching 10$^{14}$ holes/cm$^2$, our results demonstrate that FTS doping provides a unique way to study the metal-insulator transition in polythiophenes.
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Submitted 1 September, 2011;
originally announced September 2011.
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Electrostatic modification of infrared response in gated structures based on VO2
Authors:
M. M. Qazilbash,
Z. Q. Li,
V. Podzorov,
M. Brehm,
F. Keilmann,
B. G. Chae,
H. T. Kim,
D. N. Basov
Abstract:
We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal tr…
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We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.
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Submitted 30 June, 2008;
originally announced June 2008.
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Light Quasiparticles Dominate Electronic Transport in Molecular Crystal Field-Effect Transistors
Authors:
Z. Q. Li,
V. Podzorov,
N. Sai,
M. C. Martin,
M. E. Gershenson,
M. Di Ventra,
D. N. Basov
Abstract:
We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that both transport and infrared properties of these transistors at room temperature are governed by light quasiparticles in molecular orbital bands with the effective masses m* comparable to free electron mass. Furthermore,…
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We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that both transport and infrared properties of these transistors at room temperature are governed by light quasiparticles in molecular orbital bands with the effective masses m* comparable to free electron mass. Furthermore, the m* values inferred from our experiments are in agreement with those determined from band structure calculations. These findings reveal no evidence for prominent polaronic effects, which is at variance with the common beliefs of polaron formation in molecular solids.
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Submitted 10 July, 2007;
originally announced July 2007.
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Effect of shallow traps on polaron transport at the surface of organic semiconductors
Authors:
M. F. Calhoun,
C. Hsieh,
V. Podzorov
Abstract:
The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel.…
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The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, mu(N), has been measured, which allowed to estimate the average polaron trapping time, tau_tr = 50 +- 10 ps, and the density of shallow traps, N_0 = (3 +- 0.5)*10^11 cm^-2, in the channel of single-crystal tetracene devices.
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Submitted 30 October, 2006;
originally announced October 2006.
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Primary Photoexcitations and the Origin of the Photocurrent in Rubrene Single Crystals
Authors:
Hikmat Najafov,
Ivan Biaggio,
Vitaly Podzorov,
Matt Calhoun,
Michael E. Gershenson
Abstract:
By simultaneously measuring the excitation spectra of transient luminescence and transient photoconductivity after picosecond pulsed excitation in rubrene single crystals we show that free excitons are photoexcited starting at photon energies above 2.0 eV. We observe a competition between photoexcitation of free excitons and photoexcitation into vibronic states that subsequently decays into free…
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By simultaneously measuring the excitation spectra of transient luminescence and transient photoconductivity after picosecond pulsed excitation in rubrene single crystals we show that free excitons are photoexcited starting at photon energies above 2.0 eV. We observe a competition between photoexcitation of free excitons and photoexcitation into vibronic states that subsequently decays into free carriers, while molecular excitons are instead formed predominantly through the free exciton. At photon energies below 2.25 eV, free charge carriers are only created through a long-lived intermediate state with a lifetime of up to 0.1 ms and no free carriers appear during the exciton lifetime.
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Submitted 27 October, 2005;
originally announced October 2005.
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Hall effect in the accumulation layers on the surface of organic semiconductors
Authors:
V. Podzorov,
E. Menard,
J. A. Rogers,
M. E. Gershenson
Abstract:
We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measureme…
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We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, n_H, coincides with the density n calculated using the gate-channel capacitance, and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive band-like motion of field-induced charge carriers between the trapping events.
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Submitted 29 July, 2005;
originally announced August 2005.
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Interaction of Organic Surfaces with Active Species in the High-Vacuum Environment
Authors:
V. Podzorov,
E. Menard,
S. Pereversev,
B. Yakshinsky,
T. Madey,
J. A. Rogers,
M. E. Gershenson
Abstract:
Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source-drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect…
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Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source-drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect to interaction of the organic surface with electrically neutral free radicals produced in the process of hydrocarbon cracking on hot filaments with a relatively low activation energy Ea ~ 2.5 eV (240 kJ/mol). The reported results might be important for optimizing the high-vacuum processes of fabrication and characterization of a wide range of organic and molecular electronic devices.
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Submitted 15 May, 2005;
originally announced May 2005.
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Photo-induced charge transfer across the interface between organic molecular crystals and polymers
Authors:
V. Podzorov,
M. E. Gershenson
Abstract:
Photo-induced charge transfer of positive and negative charges across the interface between an ordered organic semiconductor and a polymeric insulator is observed in the field-effect experiments. Immobilization of the transferred charge in the polymer results in a shift of the field-effect threshold of polaronic conduction along the interface in the semiconductor, which allows for direct measure…
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Photo-induced charge transfer of positive and negative charges across the interface between an ordered organic semiconductor and a polymeric insulator is observed in the field-effect experiments. Immobilization of the transferred charge in the polymer results in a shift of the field-effect threshold of polaronic conduction along the interface in the semiconductor, which allows for direct measurements of the charge transfer rate. The transfer occurs when the photon energy exceeds the absorption edge of the semiconductor. The direction of the transverse electric field at the interface determines the sign of the transferred charge; the transfer rate is controlled by the field magnitude and light intensity.
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Submitted 22 November, 2004;
originally announced November 2004.
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Light-induced switching in the back-gated organic transistors with built-in conduction channel
Authors:
V. Podzorov,
V. M. Pudalov,
M. E. Gershenson
Abstract:
We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high…
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We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high-current ON state corresponds to zero or negative back-gate voltage; the low-current OFF state - to a positive back-gate voltage that blocks the Schottky contacts. Illumination of the OFET in the OFF state with a short pulse of light switches the device into the ON state that persists in the dark for days. The OFF state can be restored by cycling the back gate voltage. The observed effect can be explained by screening of the back-gate electric field by the charges photo-generated in the bulk of organic semiconductor.
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Submitted 29 June, 2004;
originally announced June 2004.
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Organic Single-Crystal Field-Effect Transistors
Authors:
R. W. I. de Boer,
M. E. Gershenson,
A. F. Morpurgo,
V. Podzorov
Abstract:
We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different t…
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We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different techniques that have been developed for device fabrication. We then concentrate on the measurements of the electrical characteristics. In most cases, these characteristics are highly reproducible and demonstrate the quality of the single crystal transistors. Particularly noticeable are the small sub-threshold slope, the non-monotonic temperature dependence of the mobility, and its weak dependence on the gate voltage. In the best rubrene transistors, room-temperature values of $μ$ as high as 15 cm$^2$/Vs have been observed. This represents an order-of-magnitude increase with respect to the highest mobility previously reported for organic thin film transistors. In addition, the highest-quality single-crystal devices exhibit a significant anisotropy of the conduction properties with respect to the crystallographic direction. These observations indicate that the field effect transistors fabricated on single crystals are suitable for the study of the \textit{intrinsic} electronic properties of organic molecular semiconductors. We conclude by indicating some directions in which near-future work should focus to progress further in this rapidly evolving area of research.
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Submitted 5 April, 2004;
originally announced April 2004.
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Intrinsic charge transport on the surface of organic semiconductors
Authors:
V. Podzorov,
E. Menard,
A. Borissov,
V. Kiryukhin,
J. A. Rogers,
M. E. Gershenson
Abstract:
The novel technique based on air-gap transistor stamps enabled realization of the intrinsic (not dominated by static disorder) transport of the electric-field-induced charge carriers on the surface of rubrene crystals over a wide temperature range. The signatures of the intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. The anisotropy of mu van…
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The novel technique based on air-gap transistor stamps enabled realization of the intrinsic (not dominated by static disorder) transport of the electric-field-induced charge carriers on the surface of rubrene crystals over a wide temperature range. The signatures of the intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. The anisotropy of mu vanishes in the activation regime at lower temperatures, where the charge transport becomes dominated by shallow traps. The deep traps, deliberately introduced into the crystal by X-ray radiation, increase the field-effect threshold without affecting the mobility. These traps filled above the field-effect threshold do not scatter the mobile polaronic carriers.
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Submitted 23 March, 2004;
originally announced March 2004.
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Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides
Authors:
V. Podzorov,
M. E. Gershenson,
Ch. Kloc,
R. Zeis,
E. Bucher
Abstract:
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity…
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We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity in the WSe2-based FETs at room temperature). These novel FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in "flexible" electronics.
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Submitted 14 January, 2004;
originally announced January 2004.
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Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs
Authors:
V. Podzorov,
S. E. Sysoev,
E. Loginova,
V. M. Pudalov,
M. E. Gershenson
Abstract:
We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate…
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We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. Subthreshold slope as small as S = 0.85 V/decade has been observed for a gate insulator capacitance Ci = 2 +- 0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si = SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (a-Si:H) devices.
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Submitted 7 June, 2003;
originally announced June 2003.
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Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator
Authors:
V. Podzorov,
V. M. Pudalov,
M. E. Gershenson
Abstract:
We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discusse…
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We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discussed.
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Submitted 24 October, 2002;
originally announced October 2002.
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Martensitic accommodation strain and the metal-insulator transition in manganites
Authors:
V. Podzorov,
B. G. Kim,
V. Kiryukhin,
M. E. Gershenson,
S-W. Cheong
Abstract:
In this paper, we report polarized optical microscopy and electrical transport studies of manganese oxides that reveal that the charge ordering transition in these compounds exhibits typical signatures of a martensitic transformation. We demonstrate that specific electronic properties of charge-ordered manganites stem from a combination of martensitic accommodation strain and effects of strong e…
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In this paper, we report polarized optical microscopy and electrical transport studies of manganese oxides that reveal that the charge ordering transition in these compounds exhibits typical signatures of a martensitic transformation. We demonstrate that specific electronic properties of charge-ordered manganites stem from a combination of martensitic accommodation strain and effects of strong electron correlations. This intrinsic strain is strongly affected by the grain boundaries in ceramic samples. Consistently, our studies show a remarkable enhancement of low field magnetoresistance and the grain size effect on the resistivity in polycrystalline samples and suggest that the transport properties of this class of manganites are governed by the charge-disordered insulating phase stabilized at low temperature by virtue of martensitic accommodation strain. High sensitivity of this phase to strains and magnetic field leads to a variety of striking phenomena, such as unusually high magnetoresistance (10^10 %) in low magnetic fields.
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Submitted 30 July, 2001;
originally announced July 2001.
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Mesoscopic, Non-equilibrium Fluctuations of Inhomogeneous Electronic States in Manganites
Authors:
V. Podzorov,
C. H. Chen,
M. E. Gershenson,
S-W. Cheong
Abstract:
By using the dark-field real-space imaging technique of transmission electron microscopy (TEM), we have observed slow 200 A-scale fluctuations of charge-ordered (CO) phase in mixed-valent manganites under a strong electron beam irradiation. In addition to these unusual fluctuations of the CO phase, we observed the switching-type fluctuations of electrical resistivity in the same sample, which we…
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By using the dark-field real-space imaging technique of transmission electron microscopy (TEM), we have observed slow 200 A-scale fluctuations of charge-ordered (CO) phase in mixed-valent manganites under a strong electron beam irradiation. In addition to these unusual fluctuations of the CO phase, we observed the switching-type fluctuations of electrical resistivity in the same sample, which were found to be as large as several percents. Systematic analysis indicates that these two different types of fluctuations with a similar time scale of the order of seconds are interconnected through a meta-stable insulating charge-disordered state. Current dependence of the fluctuations suggests a non-equilibrium nature of this slow dynamics.
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Submitted 21 May, 2001;
originally announced May 2001.
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Multiphase segregation and metal-insulator transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3
Authors:
V. Kiryukhin,
B. G. Kim,
V. Podzorov,
S-W. Cheong,
T. Y. Koo,
J. P. Hill,
I. Moon,
Y. H. Jeong
Abstract:
The insulator-metal transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3 with y=0.35 was studied using synchrotron x-ray diffraction, electric resistivity, magnetic susceptibility, and specific heat measurements. Despite the dramatic drop in the resistivity at the insulator-metal transition temperature Tmi, the charge-ordering (CO) peaks exhibit no anomaly at this temperature and continue to g…
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The insulator-metal transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3 with y=0.35 was studied using synchrotron x-ray diffraction, electric resistivity, magnetic susceptibility, and specific heat measurements. Despite the dramatic drop in the resistivity at the insulator-metal transition temperature Tmi, the charge-ordering (CO) peaks exhibit no anomaly at this temperature and continue to grow below Tmi. Our data suggest then, that in addition to the CO phase, another insulating phase is present below Tco. In this picture, the insulator-metal transition is due to the changes within this latter phase. The CO phase does not appear to play a major role in this transition. We propose that a percolation-like insulator-metal transition occurs via the growth of ferromagnetic metallic domains within the parts of the sample that do not exhibit charge ordering. Finally, we find that the low-temperature phase-separated state is unstable against x-ray irradiation, which destroys the CO phase at low temperatures.
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Submitted 18 July, 2000;
originally announced July 2000.
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Giant Peak of the 1/f Noise at the Metal-Insulator Transitions in Low-Tc CMR Manganites: Evidence of the Percolation Threshold at Tc
Authors:
V. Podzorov,
M. Uehara,
M. E. Gershenson,
S-W. Cheong
Abstract:
We observed a dramatic peak in the 1/f noise at the metal-insulator transition (MIT) in low-Tc manganites. This many-orders-of-magnitude noise enhancement is observed for both polycrystalline and single-crystal samples of La{5/8-y}Pr{y}Ca{3/8}MnO{3} (y=0.35-0.4) in zero magnetic field and Pr{1-x}Ca{x}MnO{3} (x=0.35-0.5) in magnetic field. This observation strongly suggests that the microscopic p…
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We observed a dramatic peak in the 1/f noise at the metal-insulator transition (MIT) in low-Tc manganites. This many-orders-of-magnitude noise enhancement is observed for both polycrystalline and single-crystal samples of La{5/8-y}Pr{y}Ca{3/8}MnO{3} (y=0.35-0.4) in zero magnetic field and Pr{1-x}Ca{x}MnO{3} (x=0.35-0.5) in magnetic field. This observation strongly suggests that the microscopic phase separation in the low-Tc manganites causes formation of a percolation network, and that the observed MIT is a percolation threshold.
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Submitted 3 December, 1999;
originally announced December 1999.
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Giant 1/f noise in perovskite manganites: evidence of the percolation threshold
Authors:
V. Podzorov,
M. Uehara,
M. E. Gershenson,
T. Y. Koo,
S-W. Cheong
Abstract:
We discovered an unprecedented magnitude of the 1/f noise near the Curie temperature Tc in low-Tc manganites. The scaling behavior of the 1/f noise and the resistance provides strong evidence of the percolation nature of the ferromagnetic transition in the polycrystalline samples. The step-like changes of the resistance with temperature, observed for single crystals, suggest that the size of the…
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We discovered an unprecedented magnitude of the 1/f noise near the Curie temperature Tc in low-Tc manganites. The scaling behavior of the 1/f noise and the resistance provides strong evidence of the percolation nature of the ferromagnetic transition in the polycrystalline samples. The step-like changes of the resistance with temperature, observed for single crystals, suggest that the size of the ferromagnetic domains depends on the size of crystallites.
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Submitted 14 October, 1999;
originally announced October 1999.
