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High-refractive index and mechanically cleavable non-van der Waals InGaS3
Authors:
Adilet N. Toksumakov,
Georgy A. Ermolaev,
Alexander S. Slavich,
Natalia V. Doroshina,
Ekaterina V. Sukhanova,
Dmitry I. Yakubovsky,
Sergey M. Novikov,
Alexander S. Oreshonkov,
Dmitry M. Tsymbarenko,
Zakhar I. Popov,
Dmitry G. Kvashnin,
Andrey A. Vyshnevyy,
Aleksey V. Arsenin,
Davit A. Ghazaryan,
Valentyn S. Volkov
Abstract:
The growing families of two-dimensional crystals derived from naturally occurring van der Waals materials offer an unprecedented platform to investigate elusive physical phenomena and could be of use in a diverse range of devices. Of particular interest are recently reported atomic sheets of non-van der Waals materials, which could allow a better comprehension of the nature of structural bonds and…
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The growing families of two-dimensional crystals derived from naturally occurring van der Waals materials offer an unprecedented platform to investigate elusive physical phenomena and could be of use in a diverse range of devices. Of particular interest are recently reported atomic sheets of non-van der Waals materials, which could allow a better comprehension of the nature of structural bonds and increase the functionality of prospective heterostructures. Here, we study the optostructural properties of ultrathin non-van der Waals InGaS3 sheets produced by standard mechanical cleavage. Our ab initio calculation results suggest an emergence of authentically delicate out-of-plane covalent bonds within its unit cell, and, as a consequence, an artificial generation of layered structure within the material. Those yield to singular layer isolation energies of around 50 meVA-2, which is comparable with the conventional van der Waals material's monolayer isolation energies of 20 - 60 meVA-2. In addition, we provide a comprehensive analysis of the structural, vibrational, and optical properties of the materials presenting that it is a wide bandgap (2.73 eV) semiconductor with a high-refractive index (higher than 2.5) and negligible losses in the visible and infrared spectral ranges. It makes it a perfect candidate for further establishment of visible-range all-dielectric nanophotonics.
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Submitted 5 May, 2022;
originally announced May 2022.
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Highly Efficient Bilateral Doping of Single-Walled Carbon Nanotubes
Authors:
Anastasia E. Goldt,
Orysia T. Zaremba,
Mikhail O. Bulavskiy,
Fedor S. Fedorov,
Konstantin V. Larionov,
Alexey P. Tsapenko,
Zakhar I. Popov,
Pavel Sorokin,
Anton S. Anisimov,
Heena Inani,
Jani Kotakoski,
Kimmo Mustonen,
Albert G. Nasibulin
Abstract:
A boost in the development of flexible and wearable electronics facilitates the design of new materials to be applied as transparent conducting films (TCFs). Although single-walled carbon nanotube (SWCNT) films are the most promising candidates for flexible TCFs, they still do not meet optoelectronic requirements demanded their successful industrial integration. In this study, we proposed and thor…
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A boost in the development of flexible and wearable electronics facilitates the design of new materials to be applied as transparent conducting films (TCFs). Although single-walled carbon nanotube (SWCNT) films are the most promising candidates for flexible TCFs, they still do not meet optoelectronic requirements demanded their successful industrial integration. In this study, we proposed and thoroughly investigated a new approach that comprises simultaneous bilateral (outer and inner surfaces) SWCNT doping after their opening by thermal treatment at 400 C under an ambient air atmosphere. Doping by a chloroauric acid (HAuCl$_{4}$) ethanol solution allowed us to achieve the record value of sheet resistance of 31 $\pm$ 4 $Ω$/sq at a transmittance of 90% in the middle of visible spectra (550 nm). The strong p-doping was examined by open-circuit potential (OCP) measurements and confirmed by ab initio calculations demonstrating a downshift of Fermi level around 1 eV for the case of bilateral doping.
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Submitted 1 April, 2021;
originally announced April 2021.
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Spontaneous doping of the basal plane of MoS2 single-layers through oxygen substitution under ambient conditions
Authors:
János Pető,
Tamás Ollár,
Péter Vancsó,
Zakhar I. Popov,
Gábor Zsolt Magda,
Gergely Dobrik,
Chanyong Hwang,
Pavel B. Sorokin,
Levente Tapasztó
Abstract:
The chemical inertness of the defect-free basal plane confers environmental stability to MoS2 single-layers, but it also limits their chemical versatility and catalytic activity. The stability of the pristine MoS2 basal plane against oxidation under ambient conditions is a widely accepted assumption in the interpretation of various studies and applications. However, single-atom level structural in…
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The chemical inertness of the defect-free basal plane confers environmental stability to MoS2 single-layers, but it also limits their chemical versatility and catalytic activity. The stability of the pristine MoS2 basal plane against oxidation under ambient conditions is a widely accepted assumption in the interpretation of various studies and applications. However, single-atom level structural investigations reported here reveal that oxygen atoms spontaneously incorporate into the basal plane of MoS2 single layers during ambient exposure. Our scanning tunneling microscopy investigations reveal a slow oxygen substitution reaction, upon which individual sulfur atoms are one by one replaced by oxygen, giving rise to solid solution type 2D MoS2-xOx crystals. O substitution sites present all over the basal plane act as single-atomic active reaction centers, substantially increasing the catalytic activity of the entire MoS2 basal plane for the electrochemical H2 evolution reaction.
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Submitted 2 April, 2019;
originally announced April 2019.
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Potassium carbonate under pressure: common structural trend for alkaline carbonates and binary compounds
Authors:
Pavel N. Gavryushkin,
Anna Y. Likhacheva,
Zakhar I. Popov,
Vladimir V. Bakakin,
Konstantin D. Litasov,
Anton F. Shatskiy,
Alexey I. Ancharov,
Alex Gavryushkin
Abstract:
The behaviour of alkaline carbonates at high pressure is poorly understood. Indeed, theoretical and experimental investigations of general trends of pressure induced structural changes appear in the literature only sporadically. In this article we use a combination of ab-initio calculations and high-pressure experiments in diamond anvil cell to determine crystal structures of high-pressure phases…
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The behaviour of alkaline carbonates at high pressure is poorly understood. Indeed, theoretical and experimental investigations of general trends of pressure induced structural changes appear in the literature only sporadically. In this article we use a combination of ab-initio calculations and high-pressure experiments in diamond anvil cell to determine crystal structures of high-pressure phases of K2CO3. The comparison with experimental data on Li2CO3 allows to reconstruct the common structural trend, which is consistent with the simple rule that the structure of high-pressure polymorph is the same as the ambient structure of a heavier element compound from the same group of the periodic table. The correctness of the constructed trend is confirmed by the perfect consistency with pressure-induced structural transformations in a wide range of binary A2B compounds.
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Submitted 26 August, 2015;
originally announced August 2015.
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Enhancing Electron Coherence via Quantum Phonon Confinement in Atomically Thin Nb3SiTe6
Authors:
J. Hu,
X. Liu,
C. L. Yue,
J. Y. Liu,
H. W. Zhu,
J. B. He,
J. Wei,
Z. Q. Mao,
L. Yu. Antipina,
Z. I. Popov,
P. B. Sorokin,
T. J. Liu,
P. W. Adams,
S. M. A Radmanesh,
L. Spinu,
H. Ji,
D. Natelson
Abstract:
The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcogenides MX2 (M = Mo or W, X = S, Se) monolayers, highlight the crucial role quantum confinement can have in producing a wide spectrum of technologically important electronic properties. Currently one of the highest priori…
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The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcogenides MX2 (M = Mo or W, X = S, Se) monolayers, highlight the crucial role quantum confinement can have in producing a wide spectrum of technologically important electronic properties. Currently one of the highest priorities in the field is to search for new 2D crystalline systems with structural and electronic properties that can be exploited for device development. In this letter, we report on the unusual quantum transport properties of the 2D ternary transition metal chalcogenide - Nb3SiTe6. We show that the micaceous nature of Nb3SiTe6 allows it to be thinned down to one-unit-cell thick 2D crystals using microexfoliation technique. When the thickness of Nb3SiTe6 crystal is reduced below a few unit-cells thickness, we observed an unexpected, enhanced weak-antilocalization signature in magnetotransport. This finding provides solid evidence for the long-predicted suppression of electron-phonon interaction caused by the crossover of phonon spectrum from 3D to 2D.
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Submitted 1 April, 2015;
originally announced April 2015.
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Unbiased crystal structure prediction of NiSi under high pressure
Authors:
Pavel N. Gavryushkin,
Zakhar I. Popov,
Konstantin D. Litasov,
Alex N. Gavryushkin
Abstract:
Based on the unbiased structure prediction, we showed that the stable form of NiSi compound under the pressure of 100 and 200 GPa is the Pmmn-structure. Furthermore, we discovered a new stable phase - the deformed tetragonal CsCl-type structure with a = 2.174 Å and c = 2.69 Å at 400 GPa. Specifically, the sequence of high-pressure phase transitions is the following: the Pmmn-structure - below 213…
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Based on the unbiased structure prediction, we showed that the stable form of NiSi compound under the pressure of 100 and 200 GPa is the Pmmn-structure. Furthermore, we discovered a new stable phase - the deformed tetragonal CsCl-type structure with a = 2.174 Å and c = 2.69 Å at 400 GPa. Specifically, the sequence of high-pressure phase transitions is the following: the Pmmn-structure - below 213 GPa, the tetragonal CsCl-type - in the range 213-522 GPa, and cubic CsCl - higher than 522 GPa. As the CsCl-type structure is considered as the model structure of FeSi compound at the conditions of the Earth's core, this result implies restrictions on the Fe-Ni isomorphic miscibility in FeSi.
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Submitted 20 March, 2015;
originally announced March 2015.
