Showing 1–8 of 8 results for author: Poumirol, J M

Hall and field-effect mobilities in few layered $p$-WSe$_2$ field-effect transistors

Authors: N. R. Pradhan, D. Rhodes, S. Memaran, J. M. Poumirol, D. Smirnov, S. Talapatra, S. Feng, N. Perea-Lopez, A. L. Elias, M. Terrones, P. M. Ajayan, L. Balicas

Abstract: Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/V… ▽ More Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/Vs as $T$ is lowered below $\sim$ 150 K, indicating that insofar WSe$_2$-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe$_2$ and SiO$_2$. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe$_2$-based FETs displaying higher room temperature mobilities, i.e. approaching those of $p$-doped Si, which would make it a suitable candidate for high performance opto-electronics. △ Less

Submitted 1 February, 2015; originally announced February 2015.

Comments: 35 pages including supplementary information. 7 figures in main text, 4 figures in supplementary file

Journal ref: Sci. Rep. 5, 8979 (2015)

Multicomponent Quantum Hall Ferromagnetism and Landau Level Crossing in Rhombohedral Trilayer Graphene

Authors: Y. Lee, D. Tran, K. Myhro, J. Velasco Jr., N. Gillgren, J. M. Poumirol, D. Smirnov, Y. Barlas, C. N. Lau

Abstract: Using transport measurements, we investigate multicomponent quantum Hall (QH) ferromagnetism in dual-gated rhombohedral trilayer graphene (r-TLG), in which the real spin, orbital pseudospin and layer pseudospins of the lowest Landau level form spontaneous ordering. We observe intermediate quantum Hall plateaus, indicating a complete lifting of the degeneracy of the zeroth Landau level (LL) in the… ▽ More Using transport measurements, we investigate multicomponent quantum Hall (QH) ferromagnetism in dual-gated rhombohedral trilayer graphene (r-TLG), in which the real spin, orbital pseudospin and layer pseudospins of the lowest Landau level form spontaneous ordering. We observe intermediate quantum Hall plateaus, indicating a complete lifting of the degeneracy of the zeroth Landau level (LL) in the hole-doped regime. In charge neutral r-TLG, the orbital degeneracy is broken first, and the layer degeneracy is broken last and only the in presence of an interlayer potential U. In the phase space of U and filling factor, we observe an intriguing hexagon pattern, which is accounted for by a model based on crossings between symmetry-broken LLs. △ Less

Submitted 16 January, 2016; v1 submitted 12 June, 2014; originally announced June 2014.

Journal ref: Nano Letters,16, 227 (2016)

Giant Interaction-Induced Gap and Electronic Phases in Rhombohedral Trilayer Graphene

Authors: Y. Lee, D. Tran, K. Myhro, J. Velasco Jr., N. Gillgren, C. N. Lau, Y. Barlas, J. M. Poumirol, D. Smirnov, F. Guinea

Abstract: Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can be marginal or relevant. Relevant interactions can result in spontaneous symmetry breaking, which is responsible for a large class of physical phenomena ranging from mass generation in high energy physics to correlated s… ▽ More Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can be marginal or relevant. Relevant interactions can result in spontaneous symmetry breaking, which is responsible for a large class of physical phenomena ranging from mass generation in high energy physics to correlated states such as superconductivity and magnetism in condensed matter. Here, using transport measurements, we show that rhombohedral-stacked trilayer graphene (r-TLG) offers a simple, yet novel and tunable, platform for study of various phases with spontaneous or field-induced broken symmetries. Here, we show that, contrary to predictions by tight-binding calculations, rhombohedral-stacked trilayer graphene (r-TLG) is an intrinsic insulator, with a giant interaction-induced gap Δでるた~42meV. This insulating state is a spontaneous layer antiferromagnetic with broken time reversal symmetry, and can be suppressed by increasing charge density n, an interlayer potential, a parallel magnetic field, or a critical temperature Tc~38K. This gapped collective state can be explored for switches with low input power and high on/off ratio. △ Less

Submitted 26 February, 2014; originally announced February 2014.

Cyclotron resonance of single valley Dirac fermions in gapless HgTe quantum well

Authors: J. Ludwig, Yu. B. Vasilyev, N. N. Mikhailov, J. M. Poumirol, Z. Jiang, O. Vafek, D. Smirnov

Abstract: We report on Landau level spectroscopy studies of two HgTe quantum wells (QWs) near or at the critical well thickness, where the band gap vanishes. In magnetic fields up to $B$=16T, oriented perpendicular to the QW plane, we observe a $\sqrt{B}$ dependence for the energy of the dominant cyclotron resonance (CR) transition characteristic of two-dimensional Dirac fermions. The dominant CR line exhib… ▽ More We report on Landau level spectroscopy studies of two HgTe quantum wells (QWs) near or at the critical well thickness, where the band gap vanishes. In magnetic fields up to $B$=16T, oriented perpendicular to the QW plane, we observe a $\sqrt{B}$ dependence for the energy of the dominant cyclotron resonance (CR) transition characteristic of two-dimensional Dirac fermions. The dominant CR line exhibits either a single or double absorption lineshape for the gapless or gapped QW. Using an effective Dirac model, we deduce the band velocity of single valley Dirac fermions in gapless HgTe quantum wells, $v_F=6.4 \times10^5$ m/s, and interpret the double absorption of the gapped QW as resulting from the addition of a small relativistic mass. △ Less

Submitted 18 October, 2013; originally announced October 2013.

Magnetoplasmons in quasi-neutral epitaxial graphene nanoribbons

Authors: J. M. Poumirol, W. Yu, X. Chen, C. Berger, W. A. de Heer, M. L. Smith, T. Ohta, W. Pan, M. O. Goerbig, D. Smirnov, Z. Jiang

Abstract: We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the… ▽ More We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the Landau level transition and the plasmon resonance. In the quantum regime the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensional systems and highly doped graphene. △ Less

Submitted 29 June, 2013; v1 submitted 21 May, 2013; originally announced May 2013.

Journal ref: Phys. Rev. Lett. 110, 246803 (2013)

Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

Authors: Y. Kim, J. M. Poumirol, A. Lombardo, N. G. Kalugin, T. Georgiou, Y. J. Kim, K. S. Novoselov, A. C. Ferrari, J. Kono, O. Kashuba, V. I. Fal'ko, D. Smirnov

Abstract: We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E$_{2g}$ phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier d… ▽ More We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E$_{2g}$ phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudo-magnetic fields lead to increased scattering intensity inside the anti-crossing gap, consistent with the experiment. △ Less

Submitted 19 June, 2013; v1 submitted 26 November, 2012; originally announced November 2012.

Journal ref: Phys. Rev. Lett. 110, 227402 (2013)

Integer Quantum Hall Effect in Trilayer Graphene

Authors: A. Kumar, W. Escoffier, J. M. Poumirol, C. Faugeras, D. P. Arovas, M. M. Fogler, F. Guinea, S. Roche, M. Goiran, B. Raquet

Abstract: The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landa… ▽ More The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. △ Less

Submitted 6 April, 2011; originally announced April 2011.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 107, 126806, (2011)

Electron-hole coexistence in disordered graphene probed by high-field magneto-transport

Authors: J. M. Poumirol, W. Escoffier, A. Kumar, M. Goiran, B. Raquet, J. M. Broto

Abstract: We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to graphene up to filling factor $νにゅー=2$. In the close vicinity of the charge neutrality point, the system breaks up into co-existing puddles of holes and electrons, leadin… ▽ More We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to graphene up to filling factor $νにゅー=2$. In the close vicinity of the charge neutrality point, the system breaks up into co-existing puddles of holes and electrons, leading to a vanishing Hall and finite longitudinal resistance with no hint of divergence at very high magnetic field. Large resistance fluctuations are observed near the Dirac point. They are interpreted as the the natural consequence of the presence of electron and hole puddles. The magnetic field at which the amplitude of the fluctuations are the largest is directly linked to the mean size of the puddles. △ Less

Submitted 14 April, 2010; originally announced April 2010.