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Deposition and photoluminescence of zinc gallium oxide thin films with varied stoichiometry made by reactive magnetron co-sputtering
Authors:
Martins Zubkins,
Edvards Strods,
Viktors Vibornijs,
Anatolijs Sarakovskis,
Ramūnas Nedzinskas,
Reinis Ignatans,
Edgars Butanovs,
Juris Purans,
Andris Azens
Abstract:
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron co-sputtering from liquid/solid gallium/zinc targets onto fused quartz substrates; the temperature of the substrate is varied from room temperature (RT) to 800°C. The…
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This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron co-sputtering from liquid/solid gallium/zinc targets onto fused quartz substrates; the temperature of the substrate is varied from room temperature (RT) to 800°C. The sputtering process is effectively controlled by fixing the sputtering power of one of the targets and controlling the power of the other target by plasma optical emission spectroscopy. The method, in conjunction with oxygen flow adjustment, enables the production of near-stoichiometric films at any temperature used. The composition analysis suggests a few at.% oxygen deficiency in the films. The resulting deposition rate is at least an order of magnitude higher compared to the commonly used radio-frequency sputtering from a ceramic ZnO:Ga2O3 target. Deposited onto unheated substrates, the films with Ga:Zn {\approx} 2 are X-ray amorphous. Well-defined X-ray diffraction peaks of spinel ZnGa2O4 start to appear at a substrate temperature of 300°C. The surface of the as-deposited films is dense and exhibits a fine-featured structure observed in electron microscopy images. Increasing the deposition temperature from RT to 800°C eliminates defects and improves crystallinity, which for the films with Ga:Zn ratio close to 2 results in an increase in the optical band gap from 4.6 eV to 5.1 eV. Room temperature photoluminescence established the main peak at 3.1 eV (400 nm); a similar peak in Ga2O3 is ascribed to oxygen-vacancy related transitions. A prominent feature around 2.9 eV (428 nm) is attributed to self-activation center of the octahedral Ga-O groups in the spinel lattice of ZnGa2O4. It was found that photoluminescence from ZnGa2O4 depends significantly on the ratio Ga:Zn.
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Submitted 5 February, 2024;
originally announced February 2024.
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Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics
Authors:
H. Arslan,
I. Aulika,
A. Sarakovskis,
L. Bikse,
M. Zubkins,
A. Azarov,
J. Gabrusenoks,
J. Purans
Abstract:
An experimental investigation was conducted to explore spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (+/- 5K) utilizing reactive pulsed direct current magnetron sputtering. Based on the results obtained from both x-ray diffraction and transmission electron microscope measurements, yttrium monoxide is very likely formed in the transition…
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An experimental investigation was conducted to explore spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (+/- 5K) utilizing reactive pulsed direct current magnetron sputtering. Based on the results obtained from both x-ray diffraction and transmission electron microscope measurements, yttrium monoxide is very likely formed in the transition region between β-Y2O3 and α-Y2O3, and accompanied by the crystalline Y2O3. Resulting from either the low energy separation between 4d and 5s orbitals and/or different spin states of the corresponding orbitals' sublevels, the stability of monoxide is most presumably self-limited by the size of the crystal in thermodynamic terms. This behavior develops a distortion in the structure of the crystal compared to the metal oxide cubic structure and it also effectuates the arrangement in nanocrystalline/amorphous phase. In addition to this, spectroscopic ellipsometry denotes that the semiconducting yttrium oxide has the dominant, mostly amorphous, formation character over crystalline Y2O3. Our purpose, by means of the current findings, is to advance the understanding of formation kinetics/conditions of yttrium with an unusual valency (2+).
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Submitted 11 May, 2023;
originally announced May 2023.
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Deposition of Ga2O3 thin films by liquid metal target sputtering
Authors:
Martins Zubkins,
Viktors Vibornijs,
Edvards Strods,
Edgars Butanovs,
Liga Bikse,
Mikael Ottosson,
Anders Hallén,
Jevgenijs Gabrusenoks,
Juris Purans,
Andris Azens
Abstract:
This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the temperature of the substrate is varied from room temperature (RT) to 800°C. The deposition rate (up to 37 nm/min at RT on f-quartz and 5 nm/min at 800°C on c-s…
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This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the temperature of the substrate is varied from room temperature (RT) to 800°C. The deposition rate (up to 37 nm/min at RT on f-quartz and 5 nm/min at 800°C on c-sapphire) is two to five times higher than the data given in the literature for radio frequency sputtering. Deposited onto unheated substrates, the films are X-ray amorphous. Well-defined X-ray diffraction peaks of \b{eta}-Ga2O3 start to appear at a substrate temperature of 500°C. Films grown on c-sapphire at temperatures above 600°C are epitaxial. However, the high rocking curve full width at half maximum values of {\approx} 2.4-2.5° are indicative of the presence of defects. A dense and void-free microstructure is observed in electron microscopy images. Composition analysis show stoichiometry close to Ga2O3 and no traces of impurities. The optical properties of low absorptance (<1%) in the visible range and an optical band gap of approximately 5 eV are consistent with the data in the literature for Ga2O3 films produced by other deposition methods.
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Submitted 10 January, 2023;
originally announced January 2023.
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Amorphous p-Type Conducting Zn-x Ir Oxide (x > 0.13) Thin Films Deposited by Reactive Magnetron Cosputtering
Authors:
Martins Zubkins,
Janis Timoshenko,
Jevgenijs Gabrusenoks,
Kaspars Pudzs,
Andris Azens,
Qin Wang,
Juris Purans
Abstract:
Zinc-iridium oxide (Zn-Ir-O) thin films have been demonstrated as a p-type conducting material. However, the stability of p-type conductivity with respect to chemical composition or temperature is still unclear. In this study we discuss the local atomic structure and the electrical properties of Zn-Ir-O films in the large Ir concentration range. The films are deposited by reactive DC magnetron co-…
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Zinc-iridium oxide (Zn-Ir-O) thin films have been demonstrated as a p-type conducting material. However, the stability of p-type conductivity with respect to chemical composition or temperature is still unclear. In this study we discuss the local atomic structure and the electrical properties of Zn-Ir-O films in the large Ir concentration range. The films are deposited by reactive DC magnetron co-sputtering at two different substrate temperatures-without intentional heating and at 300 °C. Extended X-ray absorption fine structure (EXAFS) analysis reveals that strongly disordered ZnO4 tetrahedra are the main Zn complexes in Zn-Ir-O films with up to 67.4 at% Ir. As the Ir concentration increases, an effective increase of Ir oxidation state is observed. Reverse Monte Carlo analysis of EXAFS at Zn K-edge shows that the average Zn-O interatomic distance and disorder factor increase with the Ir concentration. We observed that the nano-crystalline w-ZnO structure is preserved in a wider Ir concentration range if the substrate is heated during deposition. At low Ir concentration, the transition from n- to p-type conductivity is observed regardless of the temperature of the substrates. Electrical resistivity decreases exponentially with the Ir concentration in the Zn-Ir-O films.
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Submitted 12 July, 2022;
originally announced July 2022.
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Tailoring of rhenium oxidation state in ReOx thin films during reactive HiPIMS deposition process and following annealing
Authors:
M. Zubkins,
A. Sarakovskis,
E. Strods,
L. Bikse,
B. Polyakov,
A. Kuzmin,
V. Vibornijs,
J. Purans
Abstract:
Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium in a 6+ oxidation state. Here we present a novel approach for the deposition of ReOx (x = 1.6-2.9) thin films using reactive high power impulse magnetron sputter…
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Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium in a 6+ oxidation state. Here we present a novel approach for the deposition of ReOx (x = 1.6-2.9) thin films using reactive high power impulse magnetron sputtering (r-HiPIMS) from a metallic rhenium target in a mixed Ar/O2 atmosphere. The thin films were deposited in the gas-sustained self-sputtering regime, observed during r-HiPIMS process according to current waveforms. The influence of the substrate temperature, the oxygen-to-argon flow ratio and post-annealing at 250 °C in the air for 3 h on the properties of the films were studied. The as-deposited films have an X-ray amorphous structure (a-ReOx) when deposited at room temperature while a nano-crystalline \b{eta}-ReO2 phase when deposited at elevated temperatures (150 or 250 °C). The amorphous a-ReOx can be converted into the crystalline ReO3 with a lattice parameter of 3.75 Å upon annealing in the air. The surface morphology of the films is dense without detectable voids when elevated substrate temperatures are used. Various Re oxidation states are observed on the surface of the films in different ratios depending on the deposition parameters. All samples exhibit electrical resistivity on the order of 10-3 Ohmxcm and optical properties typical for thin metallic films.
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Submitted 29 June, 2022;
originally announced June 2022.
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Optical properties of oxygen-containing yttrium hydride thin films during and after the deposition
Authors:
M. Zubkins,
I. Aulika,
E. Strods,
V. Vibornijs,
L. Bikse,
A. Sarakovskis,
G. Chikvaidze,
J. Gabrusenoks,
H. Arslan,
J. Purans
Abstract:
The synthesis of the photochromic YHO films is based on the oxidation of deposited yttrium hydride in ambient conditions. The actual state of the films during the deposition process, which is influenced by the deposition pressure and the oxidation caused by the residual gases, is not completely known. We report on the YHxOy thin films deposited by reactive pulsed-DC magnetron sputtering. Since the…
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The synthesis of the photochromic YHO films is based on the oxidation of deposited yttrium hydride in ambient conditions. The actual state of the films during the deposition process, which is influenced by the deposition pressure and the oxidation caused by the residual gases, is not completely known. We report on the YHxOy thin films deposited by reactive pulsed-DC magnetron sputtering. Since the visible light transmittance is closely related to the phase and chemical composition of the films, in-situ transmittance measurements during and after deposition are performed. Ex-situ spectroscopic ellipsometry is used to determine the optical constants of YHxOy throughout the film thickness. In order to obtain metallic YH2-x films, the densest possible structure with a high deposition rate is required, otherwise the films could already be partially transparent during the deposition. The transmittance is higher if deposition pressure is increased. This is because of the oxidation promoted by more porous growth of the microstructure that is observed at the surface and cross-section images of the films. The films exhibit a refractive index gradient perpendicular to the substrate surface, which is related to the porosity and variation of the chemical composition.
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Submitted 29 June, 2022;
originally announced June 2022.
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Enhanced Reflectivity Change and Phase Shift of Polarized Light: Double Parameter Multilayer Sensor
Authors:
Ilze Aulika,
Martins Zubkins,
Jelena Butikova,
Juris Purans
Abstract:
Herein, the concept of point of darkness based on polarized light phase difference and absorption of light is demonstrated by simulations using low refractive index and extinction coefficient semiconductor and dielectric, and high refractive index nonoxidizing metal multilayer thin film structures. Several multilayer sensor configurations show great sensitivity to thickness and refractive index va…
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Herein, the concept of point of darkness based on polarized light phase difference and absorption of light is demonstrated by simulations using low refractive index and extinction coefficient semiconductor and dielectric, and high refractive index nonoxidizing metal multilayer thin film structures. Several multilayer sensor configurations show great sensitivity to thickness and refractive index variation of the detectable material by measuring the reflectivity ratio Ψ and phase shift Δ. Focus is on such multilayers, which have sensitivity to both parameters (Ψ, Δ) in the visible spectral range, thus opening the possibility for further research on a new biomedical sensor development with enhanced double parameter sensing.
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Submitted 16 February, 2022;
originally announced February 2022.
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Ab initio molecular dynamics simulations of negative thermal expansion in ScF3: the effect of the supercell size
Authors:
D. Bocharov,
M. Krack,
Yu. Rafalskij,
A. Kuzmin,
J. Purans
Abstract:
Scandium fluoride (ScF3) belongs to a class of negative thermal expansion (NTE) materials. It shows a strong lattice contraction up to about 1000 K switching to expansion at higher temperatures. Here the NTE effect in ScF3 is studied in the temperature range from 300 K to 1600 K using ab initio molecular dynamics (AIMD) simulations in the isothermal-isobaric (NpT) ensemble. The temperature depende…
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Scandium fluoride (ScF3) belongs to a class of negative thermal expansion (NTE) materials. It shows a strong lattice contraction up to about 1000 K switching to expansion at higher temperatures. Here the NTE effect in ScF3 is studied in the temperature range from 300 K to 1600 K using ab initio molecular dynamics (AIMD) simulations in the isothermal-isobaric (NpT) ensemble. The temperature dependence of the lattice constant, inter-atomic Sc-F-Sc bond angle distributions and the Sc-F and Sc-Sc radial distribution functions is obtained as a function of supercell size from 2a x 2a x 2a to 5a x 5a x 5a where a is the lattice parameter of ScF3. A comparison with the experimental Sc K-edge EXAFS data at 600 K is used to validate the accuracy of the AIMD simulations. Our results suggest that the AIMD calculations are able to reproduce qualitatively the NTE effect in ScF3, however a supercell size larger than 2a x 2a x 2a should be used to account accurately for dynamic disorder. The origin of the NTE in ScF3 is explained by the interplay between expansion and rotation of ScF6 octahedra.
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Submitted 24 February, 2020;
originally announced February 2020.
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Electronic structure of cubic ScF$_3$ from first-principles calculations
Authors:
P. Zhgun,
D. Bocharov,
S. Piskunov,
A. Kuzmin,
J. Purans
Abstract:
The first-principles calculations have been performed to investigate the ground state properties of cubic scandium trifluoride (ScF$_3$) perovskite. Using modified hybrid exchange-correlation functionals within the density functional theory (DFT) we have comprehensively compared the electronic properties of ScF$_3$ obtained by means of the linear combination of atomic orbitals (LCAO) and projector…
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The first-principles calculations have been performed to investigate the ground state properties of cubic scandium trifluoride (ScF$_3$) perovskite. Using modified hybrid exchange-correlation functionals within the density functional theory (DFT) we have comprehensively compared the electronic properties of ScF$_3$ obtained by means of the linear combination of atomic orbitals (LCAO) and projector augmented-waves (PAW) methods. Both methods allowed us to reproduce the lattice constant experimentally observed in cubic ScF$_3$ at low temperatures and predict its electronic structure in good agreement with known experimental valence-band photoelectron and F 1$s$ X-ray absorption spectra.
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Submitted 24 November, 2012;
originally announced November 2012.
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Quantum chemistry studies of the O K-edge X-ray absorption in WO3 and AWO3
Authors:
Dmitry Bocharov,
Alexei Kuzmin,
Juris Purans,
Yuri Zhukovskii
Abstract:
In this work we present an interpretation of experimental O K-edge x-ray absorption near edge structure (XANES) in perovskite-type WO3 and AWO3 compounds (A = H and Na) using three different first principles approaches: (i) full-multiple-scattering (FMS) formalism (the real-space FEFF code), (ii) hybrid density functional theory (DFT) method with partial incorporation of exact Hartree-Fock exchang…
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In this work we present an interpretation of experimental O K-edge x-ray absorption near edge structure (XANES) in perovskite-type WO3 and AWO3 compounds (A = H and Na) using three different first principles approaches: (i) full-multiple-scattering (FMS) formalism (the real-space FEFF code), (ii) hybrid density functional theory (DFT) method with partial incorporation of exact Hartree-Fock exchange using formalism of the linear combination of atomic orbitals (LCAO) as implemented in the CRYSTAL code; (iii) plane-wave DFT method using formalism of the projector-augmented waves (PAW) as implemented in the VASP code.
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Submitted 31 August, 2010;
originally announced August 2010.
