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Discovery of a topological exciton insulator with tunable momentum order
Authors:
Md Shafayat Hossain,
Tyler A. Cochran,
Yu-Xiao Jiang,
Songbo Zhang,
Huangyu Wu,
Xiaoxiong Liu,
Xiquan Zheng,
Byunghoon Kim,
Guangming Cheng,
Qi Zhang,
Maksim Litskevich,
Junyi Zhang,
Zi-Jia Cheng,
Jinjin Liu,
Jia-Xin Yin,
Xian P. Yang,
Jonathan Denlinger,
Massimo Tallarida,
Ji Dai,
Elio Vescovo,
Anil Rajapitamahuni,
Hu Miao,
Nan Yao,
Yingying Peng,
Yugui Yao
, et al. (4 additional authors not shown)
Abstract:
Topology and correlations are fundamental concepts in modern physics, but their simultaneous occurrence within a single quantum phase is exceptionally rare. In this study, we present the discovery of such a phase of matter in Ta2Pd3Te5, a semimetal where the Coulomb interaction between electrons and holes leads to the spontaneous formation of excitonic bound states below T=100 K. Our spectroscopy…
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Topology and correlations are fundamental concepts in modern physics, but their simultaneous occurrence within a single quantum phase is exceptionally rare. In this study, we present the discovery of such a phase of matter in Ta2Pd3Te5, a semimetal where the Coulomb interaction between electrons and holes leads to the spontaneous formation of excitonic bound states below T=100 K. Our spectroscopy unveils the development of an insulating gap stemming from the condensation of these excitons, thus giving rise to a highly sought-after correlated quantum phase known as the excitonic insulator. Remarkably, our scanning tunneling microscopy measurements reveal the presence of gapless boundary modes in the excitonic insulator state. Their magnetic field response and our theoretical calculations suggest a topological origin of these modes, rendering Ta2Pd3Te5 as the first experimentally identified topological excitonic insulator in a three-dimensional material not masked by any structural phase transition. Furthermore, our study uncovers a secondary excitonic instability below T=5 K, which differs from the primary one in having finite momentum. We observe unprecedented tunability of its wavevector by an external magnetic field. These findings unlock a frontier in the study of novel correlated topological phases of matter and their tunability.
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Submitted 25 December, 2023;
originally announced December 2023.
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Electronic structure, magnetic and transport properties of antiferromagnetic Weyl semimetal GdAlSi
Authors:
Antu Laha,
Asish K. Kundu,
Niraj Aryal,
Emil S. Bozin,
Juntao Yao,
Sarah Paone,
Anil Rajapitamahuni,
Elio Vescovo,
Tonica Valla,
Milinda Abeykoon,
Ran Jing,
Weiguo Yin,
Abhay N. Pasupathy,
Mengkun Liu,
Qiang Li
Abstract:
We report the topological electronic structure, magnetic, and magnetotransport properties of a noncentrosymmetric compound GdAlSi. Magnetic susceptibility shows an antiferromagnetic transition at $T_\mathrm{N}$ = 32 K. In-plane isothermal magnetization exhibits an unusual hysteresis behavior at higher magnetic field, rather than near zero field. Moreover, the hysteresis behavior is asymmetric unde…
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We report the topological electronic structure, magnetic, and magnetotransport properties of a noncentrosymmetric compound GdAlSi. Magnetic susceptibility shows an antiferromagnetic transition at $T_\mathrm{N}$ = 32 K. In-plane isothermal magnetization exhibits an unusual hysteresis behavior at higher magnetic field, rather than near zero field. Moreover, the hysteresis behavior is asymmetric under positive and negative magnetic fields. First-principles calculations were performed on various magnetic configurations, revealing that the antiferromagnetic state is the ground state, and the spiral antiferromagnetic state is a close competing state. The calculations also reveal that GdAlSi hosts multiple Weyl points near the Fermi energy. The band structure measured by angle-resolved photoemission spectroscopy (ARPES) shows relatively good agreement with the theory, with the possibility of Weyl nodes slightly above the Fermi energy. Within the magnetic ordered state, we observe an exceptionally large anomalous Hall conductivity (AHC) of ~ 1310 $Ω^{-1}$cm$^{-1}$ at 2 K. Interestingly, the anomalous Hall effect persists up to room temperature with a significant value of AHC (~ 155 $Ω^{-1}$cm$^{-1}$). Our analysis indicates that the large AHC originates from the Berry curvature associated with the multiple pairs of Weyl points near Fermi energy.
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Submitted 21 December, 2023;
originally announced December 2023.
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Thickness-dependent insulator-to-metal transition in epitaxial RuO2 films
Authors:
Anil Kumar Rajapitamahuni,
Sreejith Nair,
Zhifei Yang,
Anusha Kamath Manjeshwar,
Seung Gyo Jeong,
William Nunn,
Bharat Jalan
Abstract:
Epitaxially grown RuO2 films on TiO2 (110) exhibit significant in-plane strain anisotropy, with a compressive strain of - 4.7% along the [001] crystalline direction and a tensile strain of +2.3% along [1-10]. As the film thickness increases, anisotropic strain relaxation is expected. By fabricating Hall bar devices with current channels along two in-plane directions <001> and <1-10>, we revealed a…
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Epitaxially grown RuO2 films on TiO2 (110) exhibit significant in-plane strain anisotropy, with a compressive strain of - 4.7% along the [001] crystalline direction and a tensile strain of +2.3% along [1-10]. As the film thickness increases, anisotropic strain relaxation is expected. By fabricating Hall bar devices with current channels along two in-plane directions <001> and <1-10>, we revealed anisotropic in-plane transport in RuO2/TiO2 (110) films grown via solid-source metal-organic molecular beam epitaxy approach. For film thicknesses (t_film) < 3.6 nm, the resistivity along <001> exceeds that along <1-10> direction at all temperatures. With further decrease in film thicknesses, we uncover a transition from metallic to insulating behavior at t_film <2.1 nm. Our combined temperature- and magnetic field-dependent electrical transport measurements reveal that this transition from metallic to insulating behavior is driven by electron-electron interactions.
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Submitted 12 December, 2023;
originally announced December 2023.
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Evolution of highly anisotropic magnetism in the titanium-based kagome metals LnTi$_3$Bi$_4$ (Ln: La...Gd$^{3+}$, Eu$^{2+}$, Yb$^{2+}$)
Authors:
Brenden R. Ortiz,
Hu Miao,
David S. Parker,
Fazhi Yang,
German D. Samolyuk,
Eleanor M. Clements,
Anil Rajapitamahuni,
Turgut Yilmaz,
Elio Vescovo,
Jiaqiang Yan,
Andrew F. May,
Michael A. McGuire
Abstract:
Here we present the family of titanium-based kagome metals of the form LnTi$_3$Bi$_4$ (Ln: La...Gd$^{3+}$, Eu$^{2+}$, Yb$^{2+}$). Single crystal growth methods are presented alongside detailed magnetic and thermodynamic measurements. The orthorhombic (Fmmm) LnTi$_3$Bi$_4$ family of compounds exhibit slightly distorted titanium-based kagome nets interwoven with zig-zag lanthanide-based (Ln) chains.…
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Here we present the family of titanium-based kagome metals of the form LnTi$_3$Bi$_4$ (Ln: La...Gd$^{3+}$, Eu$^{2+}$, Yb$^{2+}$). Single crystal growth methods are presented alongside detailed magnetic and thermodynamic measurements. The orthorhombic (Fmmm) LnTi$_3$Bi$_4$ family of compounds exhibit slightly distorted titanium-based kagome nets interwoven with zig-zag lanthanide-based (Ln) chains. Crystals are easily exfoliated parallel to the kagome sheets and angular resolved photoemission (ARPES) measurements highlight the intricacy of the electronic structure in these compounds, with Dirac points existing at the Fermi level. The magnetic properties and the associated anisotropy emerge from the quasi-1D zig-zag chains of Ln, and impart a wide array of magnetic ground states ranging from anisotropic ferromagnetism to complex antiferromagnetism with a cascade of metamagnetic transitions. Kagome metals continue to provide a rich direction for the exploration of magnetic, topologic, and highly correlated behavior. Our work here introduces the LnTi$_3$Bi$_4$ compounds to augment the continuously expanding suite of complex and interesting kagome materials.
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Submitted 6 September, 2023; v1 submitted 30 August, 2023;
originally announced August 2023.
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Softening of a flat phonon mode in the kagome ScV$_6$Sn$_6$
Authors:
A. Korshunov,
H. Hu,
D. Subires,
Y. Jiang,
D. Călugăru,
X. Feng,
A. Rajapitamahuni,
C. Yi,
S. Roychowdhury,
M. G. Vergniory,
J. Strempfer,
C. Shekhar,
E. Vescovo,
D. Chernyshov,
A. H. Said,
A. Bosak,
C. Felser,
B. Andrei Bernevig,
S. Blanco-Canosa
Abstract:
The long range electronic modulations recently discovered in the geometrically frustrated kagome lattice have opened new avenues to explore the effect of correlations in materials with topological electron flat bands. The observation of the lattice response to the emergent new phases of matter, a soft phonon mode, has remained elusive and the microscopic origin of charge density waves (CDWs) is st…
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The long range electronic modulations recently discovered in the geometrically frustrated kagome lattice have opened new avenues to explore the effect of correlations in materials with topological electron flat bands. The observation of the lattice response to the emergent new phases of matter, a soft phonon mode, has remained elusive and the microscopic origin of charge density waves (CDWs) is still unknown. Here, we show, for the first time, a complete melting of the ScV$_ 6$Sn$_ 6$ (166) kagome lattice. The low energy phonon with propagation vector $\frac{1}{3} \frac{1}{3} \frac{1}{2}$ collapses at 98 K, without the emergence of long-range charge order, which sets in with a propagation vector $\frac{1}{3} \frac{1}{3} \frac{1}{3}$. The CDW is driven (but locks at a different vector) by the softening of an overdamped phonon flat plane at k$_z$=$π$. We observe broad phonon anomalies in momentum space, pointing to (1) the existence of approximately flat phonon bands which gain some dispersion due to electron renormalization, and (2) the effects of the momentum dependent electron-phonon interaction in the CDW formation. Ab initio and analytical calculations corroborate the experimental findings to indicate that the weak leading order phonon instability is located at the wave vector $\frac{1}{3} \frac{1}{3} \frac{1}{2}$ of a rather flat collapsed mode. We analytically compute the phonon frequency renormalization from high temperatures to the soft mode, and relate it to a peak in the orbital-resolved susceptibility, obtaining an excellent match with both ab initio and experimental results, and explaining the origin of the approximately flat phonon dispersion. Our data report the first example of the collapse of a softening of a flat phonon plane and promote the 166 compounds of the kagome family as primary candidates to explore correlated flat phonon-topological flat electron physics.
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Submitted 18 April, 2023;
originally announced April 2023.
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Remote Surface Optical Phonon Scattering in Ferroelectric Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ Gated Graphene
Authors:
Hanying Chen,
Tianlin Li,
Yifei Hao,
Anil Rajapitamahuni,
Zhiyong Xiao,
Stefan Schoeche,
Mathias Schubert,
Xia Hong
Abstract:
We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ films, with field effect mobility up to 23,000 cm$^{2}$V$^{-1}$s$^{-1}$ achieved. Switching the ferroelectric polarization induces nonvolatile modulation…
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We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ films, with field effect mobility up to 23,000 cm$^{2}$V$^{-1}$s$^{-1}$ achieved. Switching the ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$, from which we extract the RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.
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Submitted 30 September, 2022;
originally announced September 2022.
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Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior
Authors:
Laxman Raju Thoutam,
Tristan K. Truttmann,
Anil Kumar Rajapitamahuni,
Bharat Jalan
Abstract:
Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide thin films and heterostructures. Here, magnetotransport is investigated in a non-magnetic uniformly La-doped SrSnO3 film grown using hybrid molecular beam epitaxy. A 12 nm La:SrSnO3/2 nm SrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at T < 5 K accomp…
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Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide thin films and heterostructures. Here, magnetotransport is investigated in a non-magnetic uniformly La-doped SrSnO3 film grown using hybrid molecular beam epitaxy. A 12 nm La:SrSnO3/2 nm SrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at T < 5 K accompanied by an anomaly at ~ +/- 3 T at T < 2.5 K. Furthermore, MR with the field in-plane yielded a value exceeded 100% at 1.8 K. Using detailed temperature-, angle- and magnetic field-dependent resistance measurements, we illustrate the origin of hysteresis is not due to magnetism in the film but rather is associated with the magnetocaloric effect of the GdScO3 substrate. Given GdScO3 and similar substrates are commonly used in complex oxide research, this work highlights the importance of thermal coupling to processes in the substrates which must be carefully accounted for in the data interpretation for thin films and heterostructures utilizing these substrates.
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Submitted 11 July, 2021;
originally announced July 2021.
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Solid Source Metal-Organic Molecular Beam Epitaxy of Epitaxial RuO2
Authors:
William Nunn,
Sreejith Nair,
Hwanhui Yun,
Anusha Kamath Manjeshwar,
Anil Rajapitamahuni,
Dooyong Lee,
K. Andre Mkhoyan,
Bharat Jalan
Abstract:
A seemingly simple oxide with a rutile structure, RuO2 has been shown to possess several intriguing properties ranging from strain-stabilized superconductivity to a strong catalytic activity. Much interest has arisen surrounding the controlled synthesis of RuO2 films but, unfortunately, utilizing atomically-controlled deposition techniques like molecular beam epitaxy (MBE) has been difficult due t…
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A seemingly simple oxide with a rutile structure, RuO2 has been shown to possess several intriguing properties ranging from strain-stabilized superconductivity to a strong catalytic activity. Much interest has arisen surrounding the controlled synthesis of RuO2 films but, unfortunately, utilizing atomically-controlled deposition techniques like molecular beam epitaxy (MBE) has been difficult due to the ultra-low vapor pressure and low oxidation potential of Ru. Here, we demonstrate the growth of epitaxial, single-crystalline RuO2 films on different substrate orientations using the novel solid-source metal-organic (MO) MBE. This approach circumvents these issues by supplying Ru using a pre-oxidized solid metal-organic precursor containing Ru. High-quality epitaxial RuO2 films with bulk-like room-temperature resistivity of 55 micro-ohm-cm were obtained at a substrate temperature as low as 300 C. By combining X-ray diffraction, transmission electron microscopy, and electrical measurements, we discuss the effect of substrate temperature, orientation, film thickness, and strain on the structure and electrical properties of these films. Our results illustrating the use of novel solid-source MOMBE approach paves the way to the atomic-layer controlled synthesis of complex oxides of stubborn metals, which are not only difficult to evaporate but also hard to oxidize.
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Submitted 30 June, 2021;
originally announced July 2021.
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Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films
Authors:
Anil Kumar Rajapitamahuni,
Laxman Raju Thoutam,
Praneeth Ranga,
Sriram Krishnamoorthy,
Bharat Jalan
Abstract:
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics i…
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By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics in both bands yielding donor state energies of ~ 33.7 and ~ 45.6 meV. The former is consistent with the donor energy of Si in \b{eta}-Ga2O3 whereas the latter suggests a residual donor state, likely associated with a DX center. This study provides a critical insight into the impurity band conduction and the defect energy states in \b{eta}-Ga2O3 using high-field magnetotransport measurements.
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Submitted 1 October, 2020;
originally announced October 2020.
