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Dynamic phase transition into a mixed-CDW state in 1$T$-TaS$_2$ via a thermal quench
Authors:
A. de la Torre,
Q. Wang,
B. Campbell,
J. V. Riffle,
D. Balasundaram,
P. M. Vora,
J. P. C. Ruff,
S. M. Hollen,
K. W. Plumb
Abstract:
Ultrafast light-matter interaction has emerged as a new mechanism to exert control over the macroscopic properties of quantum materials toward novel functionality. To date, technological applications of these non-thermal phases are limited by their ultrashort lifetimes and low-ordering temperatures. Among the most studied photoinduced metastable phases for their technological promise is the hidden…
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Ultrafast light-matter interaction has emerged as a new mechanism to exert control over the macroscopic properties of quantum materials toward novel functionality. To date, technological applications of these non-thermal phases are limited by their ultrashort lifetimes and low-ordering temperatures. Among the most studied photoinduced metastable phases for their technological promise is the hidden metallic charge density wave (H-CDW) in the model correlated CDW compound 1$T$-TaS$_2$. Despite active study and engineering, the nature of the photoinduced H-CDW remains the subject of debate and is only accessible at cryogenic temperatures. Here, we stabilize the H-CDW phase at thermal equilibrium up to near-room temperature by accessing an intermediate mixed CDW order regime via thermal quenching. Using x-ray high dynamic range reciprocal space mapping (HDRM) and scanning tunneling spectroscopy (STS), we reveal the coexistence of commensurate (C) CDW and H-CDW domains below 180 K during cooling and below 210 K during warming. Our findings show that each order parameter breaks basal plane mirror symmetry with different chiral orientations and induces out-of-plane unit cell tripling in the H-CDW phase. Despite metallic domain walls and a finite density of states at zero bias observed via STS, bulk resistance remains insulating due to CDW stacking disorder. This study establishes the H-CDW as a thermally stable phase and introduces a new mechanism for switchable metallic behavior in thin flakes of 1$T$-TaS$_2$ and similar materials with competing order phases.
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Submitted 12 July, 2024; v1 submitted 10 July, 2024;
originally announced July 2024.
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Nanoscale electronic inhomogeneities in 1T-TaS$_2$
Authors:
B. Campbell,
J. V. Riffle,
A. de la Torre,
Q. Wang,
K. W. Plumb,
S. M. Hollen
Abstract:
We report a set of scanning tunneling microscopy (STM) and spectroscopy (STS) experiments studying native defects in CVT grown 1T-TaS$_2$. Six different sample surfaces from four bulk crystals were investigated. Wide area imaging reveals a prevalence of nanometer-scale electronic inhomogeneities due to native defects, with pristine regions interspersed. These inhomogeneities appear in typical as-g…
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We report a set of scanning tunneling microscopy (STM) and spectroscopy (STS) experiments studying native defects in CVT grown 1T-TaS$_2$. Six different sample surfaces from four bulk crystals were investigated. Wide area imaging reveals a prevalence of nanometer-scale electronic inhomogeneities due to native defects, with pristine regions interspersed. These inhomogeneities appear in typical as-grown crystals and coexist with a well-formed commensurate charge density wave of 1T-TaS$_2$ at low temperatures. Electronic inhomogeneities show up both as variations in the apparent height in STM and in the local density of states in STS; the bands can shift by 60 meV and the gap varies by more than 100 meV across inhomogeneities. These inhomogeneities are present in similar concentration across large-scale areas of all samples studied, but do not influence the charge density wave formation on local or global scales. The commensurate charge density wave exhibits long-range order and remains locally intact in the presence of these inhomogeneities.
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Submitted 30 October, 2023;
originally announced October 2023.
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Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene Heterointerfaces
Authors:
Jiayun Liang,
Ke Ma,
Xiao Zhao,
Guanyu Lu,
Jake V. Riffle,
Carmen Andrei,
Chengye Dong,
Turker Furkan,
Siavash Rajabpour,
Rajiv Ramanujam Prabhakar,
Joshua A. Robinson,
Magdaleno R. Vasquez Jr.,
Quang Thang Trinh,
Joel W. Ager,
Miquel Salmeron,
Shaul Aloni,
Joshua D. Caldwell,
Shawna M. Hollen,
Hans A. Bechtel,
Nabil Bassim,
Matthew P. Sherburne,
Zakaria Y. Al Balushi
Abstract:
Intercalation is a process of inserting chemical species into the heterointerfaces of two-dimensional (2D) layered materials. While much research has focused on intercalating metals and small gas molecules into graphene, the intercalation of larger molecules through the basal plane of graphene remains highly unexplored. In this work, we present a new mechanism for intercalating large molecules thr…
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Intercalation is a process of inserting chemical species into the heterointerfaces of two-dimensional (2D) layered materials. While much research has focused on intercalating metals and small gas molecules into graphene, the intercalation of larger molecules through the basal plane of graphene remains highly unexplored. In this work, we present a new mechanism for intercalating large molecules through monolayer graphene to form confined oxide materials at the graphene-substrate heterointerface. We investigate the intercalation of phosphorus pentoxide (P2O5) molecules directly from the vapor phase and confirm the formation of confined P2O5 at the graphene heterointerface using various techniques. Density functional theory (DFT) corroborate the experimental results and reveal the intercalation mechanism, whereby P2O5 dissociates into small fragments catalyzed by defects in the graphene that then permeates through lattice defects and reacts at the heterointerface to form P2O5. This process can also be used to form new confined metal phosphates (e.g., 2D InPO4). While the focus of this study is on P2O5 intercalation, the possibility of intercalation from pre-dissociated molecules catalyzed by defects in graphene may exist for other types of molecules as well. This study is a significant milestone in advancing our understanding of intercalation routes of large molecules via the basal plane of graphene, as well as heterointerface chemical reactions leading to the formation of distinctive confined complex oxide compounds.
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Submitted 4 April, 2023;
originally announced April 2023.
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Imaging atomic vacancies in commercially available black phosphorus
Authors:
J. V. Riffle,
C. Flynn,
B. St. Laurent,
C. A. Ayotte,
C. A. Caputo,
S. M. Hollen
Abstract:
Black phosphorus (BP) is receiving significant attention because of its direct 0.4-1.5 eV layer-dependent band gap and high mobility. Because BP devices rely on exfoliation from bulk crystals, there is a need to understand native impurities and defects in the source material. In particular, samples are typically p-doped, but the source of the doping is not well understood. Here, we use scanning tu…
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Black phosphorus (BP) is receiving significant attention because of its direct 0.4-1.5 eV layer-dependent band gap and high mobility. Because BP devices rely on exfoliation from bulk crystals, there is a need to understand native impurities and defects in the source material. In particular, samples are typically p-doped, but the source of the doping is not well understood. Here, we use scanning tunneling microscopy and spectroscopy to compare atomic defects of BP samples from two commercial sources. Even though the sources produced crystals with an order of magnitude difference in impurity atoms, we observed a similar defect density and level of p-doping. We attribute these defects to phosphorus vacancies and provide evidence that they are the source of the p-doping. We also compare these native defects to those induced by air exposure and show they are distinct and likely more important for control of electronic structure. These results indicate that impurities in BP play a minor role compared to vacancies, which are prevalent in commercially-available materials, and call for better control of vacancy defects.
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Submitted 22 December, 2017;
originally announced December 2017.
