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Accurate determination of thermoelectric figure of merit using ac Harman method with a four-probe configuration
Authors:
Kenjiro Okawa,
Yasutaka. Amagai,
Norihiko Sakamoto,
Nobu-Hisa Kaneko
Abstract:
The ac Harman method has been used for the direct estimation of dimensionless thermoelectric figure of merit (zT) through ac/dc resistance measurements. However, accurate zT estimation with a four-probe configuration is difficult owing to the occurrence of a thermal phase-delay in the heat flow with a low frequency current. This study reports an exact solution for zT estimation by solving the heat…
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The ac Harman method has been used for the direct estimation of dimensionless thermoelectric figure of merit (zT) through ac/dc resistance measurements. However, accurate zT estimation with a four-probe configuration is difficult owing to the occurrence of a thermal phase-delay in the heat flow with a low frequency current. This study reports an exact solution for zT estimation by solving the heat conduction equation. The analysis can explain the reverse heat flow, which is the main source of the error in the four-probe configuration, and the experimentally obtained behavior of the frequency dependence of zT of (Bi,Sb)$_2$Te$_3$. Approximately 20 % of the error is caused by a thermal phase-delay, unless an appropriate current frequency and voltage-terminal position are chosen. Thus, an accurate zT evaluation using a four-probe configuration at any voltage terminal position is achieved. These findings can lead to interesting thermoelectric metrology and could serve as a powerful tool to search for promising thermoelectric materials.
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Submitted 1 April, 2024;
originally announced April 2024.
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Phase diagram and piezoelectric response of (Ba1-xCax)(Zr0.1Ti0.9)O3 solid solution
Authors:
Desheng Fu,
Yuto Kamai,
Naonori Sakamoto,
Naoki Wakiya,
Hisao Suzuki,
Mitsuru Itoh
Abstract:
We report the phase diagram of (Ba1-xCax)(Zr0.1Ti0.9)O3 solid solution. It is found that substitution of smaller Ca ions for Ba ions can slightly increase the cubic-tetragonal(T) para-ferroelectric phase transition temperature and strongly decrease the T-orthorhombic (O) and O-rhombohedral (R) transition. This unique ferroelectric phase evolution is attributed to Ca off-centering effects. More imp…
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We report the phase diagram of (Ba1-xCax)(Zr0.1Ti0.9)O3 solid solution. It is found that substitution of smaller Ca ions for Ba ions can slightly increase the cubic-tetragonal(T) para-ferroelectric phase transition temperature and strongly decrease the T-orthorhombic (O) and O-rhombohedral (R) transition. This unique ferroelectric phase evolution is attributed to Ca off-centering effects. More importantly, lowering of the T-O or O-R phase transitions allows us to prepare the piezoelectric ceramics with a strain response as high as S/E~800 pm/V (E=10 kV/cm) over a wide range of compositions with x~0.1 - 0. 18 at room temperature, which may be interesting for piezoelectric applications.
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Submitted 16 September, 2013;
originally announced September 2013.
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High-Tc BaTiO3 ferroelectric films with frozen negative pressure states
Authors:
Desheng Fu,
Kouhei Fukamachi,
Naonori Sakamoto,
Naoki Wakiya,
Hisao Suzuki,
Mitsuru Itoh,
Takeshi Nishimatsu
Abstract:
We report that an energetic plasma process is extremely effective in enlarging the unit cell volume and ferroelectric distortion of the ferroelectric oxides, resulting in a significant increase in its Tc. We demonstrate experimentally that c-axis oriented BaTiO3 films can be deposited directly on quartz glass and Si substrates using such a process and that the material shows an approximately 5% ex…
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We report that an energetic plasma process is extremely effective in enlarging the unit cell volume and ferroelectric distortion of the ferroelectric oxides, resulting in a significant increase in its Tc. We demonstrate experimentally that c-axis oriented BaTiO3 films can be deposited directly on quartz glass and Si substrates using such a process and that the material shows an approximately 5% expansion of its unit cell volume and approximately 4 times the ferroelectric tetragonal distortion of the bulk crystals. Such a frozen negative pressure results in a Tc value that is approximately 580 K higher than that of bulk single crystals, providing a wide range of operating temperatures for the devices. The present results suggest an approach to producing ferroelectric oxides with unique properties that might be extended to ferromagnetic or superconductor oxides and demonstrate a route to a lead-free ferroelectric oxide for capacitive, ferroelectric memory, and electro-optical devices.
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Submitted 22 February, 2011;
originally announced February 2011.
