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Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology
Authors:
Ghulam Hussain,
Giuseppe Cuono,
Piotr Dziawa,
Dorota Janaszko,
Janusz Sadowski,
Slawomir Kret,
Boguslawa Kurowska,
Jakub Polaczynski,
Kinga Warda,
Shahid Sattar,
Carlo M. Canali,
Alexander Lau,
Wojciech Brzezicki,
Tomasz Story,
Carmine Autieri
Abstract:
We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, w…
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We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundary, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region.
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Submitted 17 May, 2024; v1 submitted 7 January, 2024;
originally announced January 2024.
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Monolayer MnX and Janus XMnY (X, Y= S, Se, Te): A New Family of 2D Antiferromagnetic Semiconductors
Authors:
Shahid Sattar,
Md. Fhokrul Islam,
C. M. Canali
Abstract:
We present first-principles results on the structural, electronic, and magnetic properties of a new family of two-dimensional antiferromagnetic (AFM) manganese chalcogenides, namely monolayer MnX and Janus XMnY (X, Y= S, Se, Te), among which monolayer MnSe was recently synthesized in experiments [\href{https://pubs.acs.org/doi/abs/10.1021/acsnano.1c05532}{ACS Nano 15 (8),13794 (2021)}]. By carryin…
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We present first-principles results on the structural, electronic, and magnetic properties of a new family of two-dimensional antiferromagnetic (AFM) manganese chalcogenides, namely monolayer MnX and Janus XMnY (X, Y= S, Se, Te), among which monolayer MnSe was recently synthesized in experiments [\href{https://pubs.acs.org/doi/abs/10.1021/acsnano.1c05532}{ACS Nano 15 (8),13794 (2021)}]. By carrying out calculations of the phonon dispersion and \textit{ab-initio} molecular dynamics simulations, we first confirmed that these systems, characterized by an unconventional strongly coupled bilayer atomic structure (consisting of Mn atoms buckled to chalcogens forming top and bottom ferromagnetic (FM) planes with antiparallel spin orientation) are dynamically and thermally stable. The analysis of the the magnetic properties shows that these materials have robust AFM order, retaining a much lower energy than the FM state even for under strain. Our electronic structure calculations reveal that pristine MnX and their Janus counterparts are indirect-gap semiconductors, covering a wide energy range and displaying tunable band gaps by the application of biaxial tensile and compressive strain. Interestingly, owing to the absence of inversion and time-reversal symmetry, and the presence of an asymmetrical potential in the out-of-plane direction, Janus XMnY become spin-split gapped systems, presenting a rich physics yet to be explored. Our findings provide novel insights in this physics, and highlight the potential for these two-dimensional manganese chalcogenides in AFM spintronics.
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Submitted 11 April, 2022;
originally announced April 2022.
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Giant Valley-Polarized Spin Splittings in Magnetized Janus Pt Dichalcogenides
Authors:
Shahid Sattar,
J. Andreas Larsson,
C. M. Canali,
Stephan Roche,
Jose H. Garcia
Abstract:
We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K$^{'}$valleys in the conduction bands. Each of these valleys dis…
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We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K$^{'}$valleys in the conduction bands. Each of these valleys displays its own spin polarization and a specific spin-texture dictated by broken inversion and time-reversal symmetries, and valley-exchange and Rashba splittings as large as hundreds of meV. This provides a platform for exploring novel spin-valley physics in low-dimensional semiconductors, with potential spin transport mechanisms such as spin-orbit torques much more resilient to disorder and temperature effects.
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Submitted 11 January, 2022;
originally announced January 2022.
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Superior Gas Sensing Properties of $β$-In$_2$Se$_3$: A First-Principles Investigation
Authors:
Sherifdeen O. Bolarinwa,
Shahid Sattar,
Abdullah A. AlShaikhi
Abstract:
Using first-principles calculations, we report structural and electronic properties of CO, NO$_2$, and NO molecular adsorption on $β$-In$_2$Se$_3$ in comparison to a previous study on alpha-phase. Analysis and comparison of adsorption energies and extent of charge transfer indicates $β$-In$_2$Se$_3$ to be selective in detecting gas molecules. We found NO molecules acting as charge donor whereas CO…
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Using first-principles calculations, we report structural and electronic properties of CO, NO$_2$, and NO molecular adsorption on $β$-In$_2$Se$_3$ in comparison to a previous study on alpha-phase. Analysis and comparison of adsorption energies and extent of charge transfer indicates $β$-In$_2$Se$_3$ to be selective in detecting gas molecules. We found NO molecules acting as charge donor whereas CO and NO2 molecules as charge acceptors, respectively, experiencing physisorption in all cases. Owing to enhanced adsorption, faster desorption and improved selectivity of the gas molecules discussed in detail, we conclude $β$-In$_2$Se$_3$ to be a superior gas sensing material ideal for chemoresistive-type gas sensing applications.
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Submitted 2 October, 2021;
originally announced October 2021.
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Rashba Effect and Raman Spectra of Tl$_2$O/PtS$_2$ Heterostructure
Authors:
Shahid Sattar,
J. Andreas Larsson
Abstract:
The possibility to achieve charge-to-spin conversion via Rashba spin-orbit effects provide stimulating opportunities toward the development of nanoscale spintronics. Here we use first-principles calculations to study the electronic and spintronic properties of Tl$_2$O/PtS$_2$ heterostructure, for which we have confirmed the dynamical stability by its positive phonon frequencies. An unexpectedly hi…
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The possibility to achieve charge-to-spin conversion via Rashba spin-orbit effects provide stimulating opportunities toward the development of nanoscale spintronics. Here we use first-principles calculations to study the electronic and spintronic properties of Tl$_2$O/PtS$_2$ heterostructure, for which we have confirmed the dynamical stability by its positive phonon frequencies. An unexpectedly high binding energy of -0.38 eV per unit cell depicts strong interlayer interactions between Tl$_2$O and PtS$_2$. Interestingly, we discover Rashba spin-splitting's (with large $α_R$ value) in the valence band of Tl$_2$O stemming from interfacial spin-orbit effects caused by PtS$_2$. The role of van der Waals binding on the orbital rearrangements has been studied using electron localization function and atomic orbital projections, which explains in detail the electronic dispersion near the Fermi level. Moreover, we explain the distinct band structure alignment in momentum space but separation in real space of Tl$_2$O/PtS$_2$ heterostructure. Since 2D Tl$_2$O still awaits experimental confirmation, we calculate, for the first time, the Raman spectra of pristine Tl$_2$O and the Tl$_2$O/PtS$_2$ heterostructure and discuss peak positions corresponding to vibrational modes of the atoms. These findings offer a promising avenue to explore spin physics for potential spintronics applications via 2D heterostructures.
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Submitted 22 December, 2020;
originally announced December 2020.
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Tunable Electronic Properties and Large Rashba Splittings Found in Few-Layer Bi$_2$Se$_3$/PtSe$_2$ Van der Waals Heterostructures
Authors:
Shahid Sattar,
J. Andreas Larsson
Abstract:
We use first-principles calculations to show that van der Waals (vdW) heterostructures consisting of few-layer Bi$_2$Se$_3$ and PtSe$_2$ exhibit electronic and spintronics properties that can be tuned by varying the constituent layers. Type-II band alignment with layer-tunable band gaps and type-III band alignment with spin-splittings have been found. Most noticeably, we reveal the coexistence of…
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We use first-principles calculations to show that van der Waals (vdW) heterostructures consisting of few-layer Bi$_2$Se$_3$ and PtSe$_2$ exhibit electronic and spintronics properties that can be tuned by varying the constituent layers. Type-II band alignment with layer-tunable band gaps and type-III band alignment with spin-splittings have been found. Most noticeably, we reveal the coexistence of Rashba-type spin-splittings (with large $α_{\rm R}$ parameters) in both the conduction and valence band stemming from few-layer Bi$_2$Se$_3$ and PtSe$_2$, respectively, which has been confirmed by spin-texture plots. We discuss the role of inversion symmetry breaking, changes in orbital hybridization and spin-orbit coupling in altering electronic dispersion near the Fermi level. Since low-temperature growth mechanisms are available for both materials, we believe that few-layer Bi$_2$Se$_3$/PtSe$_2$ vdW heterostructures are feasible to realize experimentally, offering great potential for electronic and spintronics applications.
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Submitted 14 December, 2020;
originally announced December 2020.
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Proximity induced spin-valley polarization in silicene/germanene on F-doped WS$_2$
Authors:
Shahid Sattar,
Nirpendra Singh,
Udo Schwingenschlögl
Abstract:
Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS$_2$) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for…
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Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS$_2$) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for this purpose. The behavior is explained by proximity effects on silicene/germanene, as demonstrated by first-principles calculations. Broken inversion symmetry due to the presence of WS$_2$ opens a substantial band gap in silicene/germanene. F doping of WS$_2$ results in spin polarization, which, in conjunction with proximity-enhanced spin orbit coupling, creates sizable spin-valley polarization.
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Submitted 13 January, 2017;
originally announced January 2017.
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Solid argon as a possible substrate for quasi-freestanding silicene
Authors:
S. Sattar,
R. Hoffmann,
U. Schwingenschlögl
Abstract:
We study the structural and electronic properties of silicene on solid Ar(111) substrate using ab-initio calculations. We demonstrate that due to weak interaction quasi-freestanding silicene is realized in this system. The small binding energy of only $-32$ meV per Si atom also indicates the possibility to separate silicene from the solid Ar(111) substrate. In addition, a band gap of $11$ meV and…
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We study the structural and electronic properties of silicene on solid Ar(111) substrate using ab-initio calculations. We demonstrate that due to weak interaction quasi-freestanding silicene is realized in this system. The small binding energy of only $-32$ meV per Si atom also indicates the possibility to separate silicene from the solid Ar(111) substrate. In addition, a band gap of $11$ meV and a significant splitting of the energy levels due to spin-orbit coupling are observed.
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Submitted 24 June, 2014;
originally announced June 2014.
