Showing 1–9 of 9 results for author: Spalek, L

Revealing contributions to conduction from transport within ordered and disordered regions in highly doped conjugated polymers through analysis of temperature-dependent Hall measurements

Authors: William A. Wood, Ian E. Jacobs, Leszek J. Spalek, Yuxuan Huang, Chen Chen, Xinglong Ren, Henning Sirringhaus

Abstract: Hall effect measurements in doped polymer semiconductors are widely reported, but are difficult to interpret due to screening of Hall voltages by carriers undergoing incoherent transport. Here, we propose a refined analysis for such Hall measurements, based on measuring the Hall coefficient as a function of temperature, and modelling carriers as existing in a regime of variable "deflectability" (i… ▽ More Hall effect measurements in doped polymer semiconductors are widely reported, but are difficult to interpret due to screening of Hall voltages by carriers undergoing incoherent transport. Here, we propose a refined analysis for such Hall measurements, based on measuring the Hall coefficient as a function of temperature, and modelling carriers as existing in a regime of variable "deflectability" (i.e. how strongly they "feel" the magnetic part of the Lorentz force). By linearly interpolating each carrier between the extremes of no deflection and full deflection, we demonstrate that it is possible to extract the (time-averaged) concentration of deflectable charge carriers, $\left<n_d\right>$, the average, temperature-dependent mobility of those carriers, $\left<μみゅー_d\right>(T)$, as well as the ratio of conductivity that comes from such deflectable transport, $d(T)$. Our method was enabled by the construction of an improved AC Hall measurement system, as well as an improved data extraction method. We measured Hall bar devices of ion-exchange doped films of PBTTT-C$_{14}$ from 10--300 K. Our analysis provides evidence for the proportion of conductivity arising from deflectable transport, $d(T)$, increasing with doping level, ranging between 15.4% and 16.4% at room temperature. When compared to total charge-carrier-density estimates from independent methods, the values of $\left<n_d\right>$ extracted suggest that carriers spend $\sim$37% of their time of flight being deflectable in the most highly doped of the devices measured here. The extracted values of $d(T)$ being less than half this value thus suggest that the limiting factor for conductivity in such highly doped devices is carrier mobility, rather than concentration. △ Less

Submitted 24 March, 2023; originally announced March 2023.

Comments: Accepted for publication in APS Physical Review Materials

The effect of the dielectric end groups on the positive bias stress stability of N2200 organic field effect transistors

Authors: D. Simatos, L. J. Spalek, U. Kraft, M. Nikolka, X. Jiao, C. R. McNeill, D. Venkateshvaran, H. Sirringhaus

Abstract: Bias stress degradation in conjugated polymer field-effect transistors is a fundamental problem in these disordered materials and can be traced back to interactions of the material with environmental species,1,2,3 as well as fabrication-induced defects.4,5 However, the effect of the end groups of the polymer gate dielectric and the associated dipole-induced disorder on bias stress stability has no… ▽ More Bias stress degradation in conjugated polymer field-effect transistors is a fundamental problem in these disordered materials and can be traced back to interactions of the material with environmental species,1,2,3 as well as fabrication-induced defects.4,5 However, the effect of the end groups of the polymer gate dielectric and the associated dipole-induced disorder on bias stress stability has not been studied so far in high-performing n-type materials, such as N2200.6,7 In this work, the performance metrics of N2200 transistors are examined with respect to dielectrics with different end groups (Cytop-M and Cytop-S8). We hypothesize that the polar end groups would lead to increased dipole-induced disorder, and worse performance.1,9,10 The long-time annealing scheme at lower temperatures used in the paper is assumed to lead to better crystallization by allowing the crystalline domains to reorganize in the presence of the solvent.11 It is hypothesized that the higher crystallinity could narrow down the range at which energy carriers are induced and thus decrease the gate dependence of the mobility. The results show that the dielectric end groups do not influence the bias stress stability of N2200 transistors. However, long annealing times result in a dramatic improvement in bias stress stability, with the most stable devices having a mobility that is only weakly dependent on or independent of gate voltage. △ Less

Submitted 14 April, 2021; originally announced April 2021.

Comments: The following article has been accepted by APL Materials. After it is published, it will be found at https://doi.org/10.1063/5.0044785

Structural and dynamic disorder, not ionic trapping, controls charge transport in highly doped conducting polymers

Authors: Ian E. Jacobs, Gabriele D'Avino, Vincent Lemaur, Yue Lin, Yuxuan Huang, Chen Chen, Thomas Harrelson, William Wood, Leszek J. Spalek, Tarig Mustafa, Christopher A. O'Keefe, Xinglong Ren, Dimitrios Simatos, Dion Tjhe, Martin Statz, Joseph Strzalka, Jin-Kyun Lee, Iain McCulloch, Simone Fratini, David Beljonne, Henning Sirringhaus

Abstract: Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Us… ▽ More Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique, we find the conductivity of several classes of high-mobility conjugated polymers to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parameterized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localisation theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disordered-limited nature of charge transport and suggesting new strategies to further improve conductivities. △ Less

Submitted 23 September, 2021; v1 submitted 5 January, 2021; originally announced January 2021.

Journal ref: J. Am. Chem. Soc. 2022, 144, 3005-3019

Fragment Graphical Variational AutoEncoding for Screening Molecules with Small Data

Authors: John Armitage, Leszek J. Spalek, Malgorzata Nguyen, Mark Nikolka, Ian E. Jacobs, Lorena Marañón, Iyad Nasrallah, Guillaume Schweicher, Ivan Dimov, Dimitrios Simatos, Iain McCulloch, Christian B. Nielsen, Gareth Conduit, Henning Sirringhaus

Abstract: In the majority of molecular optimization tasks, predictive machine learning (ML) models are limited due to the unavailability and cost of generating big experimental datasets on the specific task. To circumvent this limitation, ML models are trained on big theoretical datasets or experimental indicators of molecular suitability that are either publicly available or inexpensive to acquire. These a… ▽ More In the majority of molecular optimization tasks, predictive machine learning (ML) models are limited due to the unavailability and cost of generating big experimental datasets on the specific task. To circumvent this limitation, ML models are trained on big theoretical datasets or experimental indicators of molecular suitability that are either publicly available or inexpensive to acquire. These approaches produce a set of candidate molecules which have to be ranked using limited experimental data or expert knowledge. Under the assumption that structure is related to functionality, here we use a molecular fragment-based graphical autoencoder to generate unique structural fingerprints to efficiently search through the candidate set. We demonstrate that fragment-based graphical autoencoding reduces the error in predicting physical characteristics such as the solubility and partition coefficient in the small data regime compared to other extended circular fingerprints and string based approaches. We further demonstrate that this approach is capable of providing insight into real world molecular optimization problems, such as searching for stabilization additives in organic semiconductors by accurately predicting 92% of test molecules given 69 training examples. This task is a model example of black box molecular optimization as there is minimal theoretical and experimental knowledge to accurately predict the suitability of the additives. △ Less

Submitted 30 October, 2019; v1 submitted 21 October, 2019; originally announced October 2019.

Magnetoelastic relaxations in EuTiO3

Authors: J. Schiemer, L. J. Spalek, S. S. Saxena, C. Panagopoulos, T. Katsufuji, M. A. Carpenter

Abstract: The multiferroic properties of EuTiO3 are greatly enhanced when a sample is strained, signifying that coupling between strain and structural, magnetic or ferroelectric order parameters is extremely important. Here resonant ultrasound spectroscopy has been used to investigate strain coupling effects, as well as possible additional phase transitions, through their influence on elastic and anelastic… ▽ More The multiferroic properties of EuTiO3 are greatly enhanced when a sample is strained, signifying that coupling between strain and structural, magnetic or ferroelectric order parameters is extremely important. Here resonant ultrasound spectroscopy has been used to investigate strain coupling effects, as well as possible additional phase transitions, through their influence on elastic and anelastic relaxations that occur as a function of temperature between 2 and 300 K and with applied magnetic field up to 14 T. Antiferromagnetic ordering is accompanied by acoustic loss and softening, and a weak magnetoelastic effect is also associated with the change in magnetization direction below ~2.8 K. Changes in loss due to the influence of magnetic field suggest the existence of magnetic defects which couple with strain and may play a role in pinning of ferroelastic twin walls. △ Less

Submitted 18 March, 2015; originally announced March 2015.

Journal ref: Europhysics Letters 109, 57004, 2015

Intrinsic Structural Disorder and the Magnetic Ground State in Bulk EuTiO3

Authors: A. P. Petrovic, Y. Kato, S. S. Sunku, T. Ito, P. Sengupta, L. Spalek, M. Shimuta, T. Katsufuji, C. D. Batista, S. Saxena, C. Panagopoulos

Abstract: The magnetic properties of single-crystal EuTiO3 are suggestive of nanoscale disorder below its cubic-tetragonal phase transition. We demonstrate that electric field cooling acts to restore monocrystallinity, thus confirming that emergent structural disorder is an intrinsic low-temperature property of this material. Using torque magnetometry, we deduce that tetragonal EuTiO3 enters an easy-axis an… ▽ More The magnetic properties of single-crystal EuTiO3 are suggestive of nanoscale disorder below its cubic-tetragonal phase transition. We demonstrate that electric field cooling acts to restore monocrystallinity, thus confirming that emergent structural disorder is an intrinsic low-temperature property of this material. Using torque magnetometry, we deduce that tetragonal EuTiO3 enters an easy-axis antiferromagnetic phase at 5.6 K, with a first-order transition to an easy-plane ground state below 3 K. Our data is reproduced by a 3D anisotropic Heisenberg spin model. △ Less

Submitted 31 March, 2012; originally announced April 2012.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B 87, 064103 (2013)

On the role of intrinsic disorder in the structural phase transition of magnetoelectric EuTiO3

Authors: Mattia Allieta, Marco Scavini, Leszek Spalek, Valerio Scagnoli, Helen C. Walker, Christos Panagopoulos, Siddharth Saxena, Takuro Katsufuji, Claudio Mazzoli

Abstract: Up to now the crystallographic structure of the magnetoelectric perovskite EuTiO3 was considered to remain cubic down to low temperature. Here we present high resolution synchrotron X-ray powder diffraction data showing the existence of a structural phase transition, from cubic Pm-3m to tetragonal I4/mcm, involving TiO6 octahedra tilting, in analogy to the case of SrTiO3. The temperature evolution… ▽ More Up to now the crystallographic structure of the magnetoelectric perovskite EuTiO3 was considered to remain cubic down to low temperature. Here we present high resolution synchrotron X-ray powder diffraction data showing the existence of a structural phase transition, from cubic Pm-3m to tetragonal I4/mcm, involving TiO6 octahedra tilting, in analogy to the case of SrTiO3. The temperature evolution of the tilting angle indicates a second-order phase transition with an estimated Tc=235K. This critical temperature is well below the recent anomaly reported by specific heat measurement at TA\sim282K. By performing atomic pair distribution function analysis on diffraction data we provide evidence of a mismatch between the local (short-range) and the average crystallographic structures in this material. Below the estimated Tc, the average model symmetry is fully compatible with the local environment distortion but the former is characterized by a reduced value of the tilting angle compared to the latter. At T=240K data show the presence of local octahedra tilting identical to the low temperature one, while the average crystallographic structure remains cubic. On this basis, we propose intrinsic lattice disorder to be of fundamental importance in the understanding of EuTiO3 properties. △ Less

Submitted 3 November, 2011; v1 submitted 2 November, 2011; originally announced November 2011.

Comments: 13 pages, 8 figures, 2 tables

Journal ref: Phys. Rev. B 85, 184107 (2012)

Quantum criticality in ferroelectrics

Authors: S. E. Rowley, L. J. Spalek, R. P. Smith, M. P. M. Dean, G. G. Lonzarich, J. F. Scott, S. S. Saxena

Abstract: Materials tuned to the neighbourhood of a zero temperature phase transition often show the emergence of novel quantum phenomena. Much of the effort to study these new effects, like the breakdown of the conventional Fermi-liquid theory of metals has been focused in narrow band electronic systems. Ferroelectric crystals provide a very different type of quantum criticality that arises purely from t… ▽ More Materials tuned to the neighbourhood of a zero temperature phase transition often show the emergence of novel quantum phenomena. Much of the effort to study these new effects, like the breakdown of the conventional Fermi-liquid theory of metals has been focused in narrow band electronic systems. Ferroelectric crystals provide a very different type of quantum criticality that arises purely from the crystalline lattice. In many cases the ferroelectric phase can be tuned to absolute zero using hydrostatic pressure or chemical or isotopic substitution. Close to such a zero temperature phase transition, the dielectric constant and other quantities change into radically unconventional forms due to the quantum fluctuations of the electrical polarization. The simplest ferroelectrics may form a text-book paradigm of quantum criticality in the solid-state as the difficulties found in metals due to a high density of gapless excitations on the Fermi surface are avoided. We present low temperature high precision data demonstrating these effects in pure single crystals of SrTiO3 and KTaO3. We outline a model for describing the physics of ferroelectrics close to quantum criticality and highlight the expected 1/T2 dependence of the dielectric constant measured over a wide temperature range at low temperatures. In the neighbourhood of the quantum critical point we report the emergence of a small frequency independent peak in the dielectric constant at approximately 2K in SrTiO3 and 3K in KTaO3 believed to arise from coupling to acoustic phonons. Looking ahead, we suggest that in ferroelectric materials supporting mobile charge carriers, quantum paraelectric fluctuations may mediate new effective electron-electron interactions giving rise to a number of possible states such as superconductivity. △ Less

Submitted 9 March, 2009; originally announced March 2009.

Comments: 10 pages, 4 figures

Journal ref: Nature Physics 10, 367-372 (2014)

Verwey transition in Fe$_{3}$O$_{4}$ at high pressure: quantum critical behavior at the onset of metallization

Authors: J. Spałek, A. Kozłowski, Z. Tarnawski, Z. Kcakol, Y. Fukami, F. Ono, R. Zach, L. J. Spalek

Abstract: We provide evidence for the existence of a {\em quantum critical point} at the metallization of magnetite Fe$_{3}$O$_{4}$ at an applied pressure of $p_{c} \approx 8$ GPa. We show that the present ac magnetic susceptibility data support earlier resistivity data. The Verwey temperature scales with pressure $T_{V}\sim (1-p/p_{c})^νにゅー$, with $νにゅー\sim 1/3$. The resistivity data shows a temperature depend… ▽ More We provide evidence for the existence of a {\em quantum critical point} at the metallization of magnetite Fe$_{3}$O$_{4}$ at an applied pressure of $p_{c} \approx 8$ GPa. We show that the present ac magnetic susceptibility data support earlier resistivity data. The Verwey temperature scales with pressure $T_{V}\sim (1-p/p_{c})^νにゅー$, with $νにゅー\sim 1/3$. The resistivity data shows a temperature dependence $ρろー(T)=ρろー_{0}+AT^{n}$, with $n\simeq 3$ above and 2.5 at the critical pressure, respectively. This difference in $n$ with pressure is a sign of critical behavior at $p_{c}$. The magnetic susceptibility is smooth near the critical pressure, both at the Verwey transition and near the ferroelectric anomaly. A comparison with the critical behavior observed in the Mott-Hubbard and related systems is made. △ Less

Submitted 5 February, 2008; originally announced February 2008.

Comments: 5 pages, 5 figures