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Contact conductance governs metallicity in conducting metal oxide nanocrystal films
Authors:
Corey M. Staller,
Stephen L. Gibbs,
Xing Yee Gan,
Jay T. Bender,
Karalee Jarvis,
Gary K. Ong,
Delia J. Milliron
Abstract:
In bulk semiconductor materials, the insulator-metal transition (IMT) is governed by the concentration of conduction electrons. Meanwhile, even when fabricated from metallic building blocks, nanocrystal films are often insulating with inter-nanocrystal contacts acting as electron transport bottlenecks. Using a library of transparent conducting tin-doped indium oxide nanocrystal films with varied e…
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In bulk semiconductor materials, the insulator-metal transition (IMT) is governed by the concentration of conduction electrons. Meanwhile, even when fabricated from metallic building blocks, nanocrystal films are often insulating with inter-nanocrystal contacts acting as electron transport bottlenecks. Using a library of transparent conducting tin-doped indium oxide nanocrystal films with varied electron concentration, size, and contact area, we test candidate criteria for the IMT and establish a phase diagram for electron transport behavior. From variable temperature conductivity measurements, we learn that both the IMT and a subsequent crossover to conventional metallic behavior near room temperature are governed by the conductance of the inter-nanocrystal contacts. To cross the IMT, inter-nanocrystal coupling must be sufficient to overcome the charging energy of a nanocrystal, while conventional metallic behavior requires contact conductance to reach the conductance of a nanocrystal. This understanding can enable the design and fabrication of metallic conducting materials from nanocrystal building blocks.
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Submitted 15 February, 2022; v1 submitted 20 November, 2021;
originally announced November 2021.
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Intrinsic Optical and Electronic Properties from Quantitative Analysis of Plasmonic Semiconductor Nanocrystal Ensemble Optical Extinction
Authors:
Stephen L. Gibbs,
Corey M. Staller,
Ankit Agrawal,
Robert W. Johns,
Camila A. Saez Cabezas,
Delia J. Milliron
Abstract:
The optical extinction spectra arising from localized surface plasmon resonance in doped semiconductor nanocrystals (NCs) have intensities and lineshapes determined by free charge carrier concentrations and the various mechanisms for damping the oscillation of those free carriers. However, these intrinsic properties are convoluted by heterogeneous broadening when measuring spectra of ensembles. We…
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The optical extinction spectra arising from localized surface plasmon resonance in doped semiconductor nanocrystals (NCs) have intensities and lineshapes determined by free charge carrier concentrations and the various mechanisms for damping the oscillation of those free carriers. However, these intrinsic properties are convoluted by heterogeneous broadening when measuring spectra of ensembles. We reveal that the traditional Drude approximation is not equipped to fit spectra from a heterogeneous ensemble of doped semiconductor NCs and produces fit results that violate Mie scattering theory. The heterogeneous ensemble Drude approximation (HEDA) model rectifies this issue by accounting for ensemble heterogeneity and near-surface depletion. The HEDA model is applied to tin-doped indium oxide NCs for a range of sizes and doping levels but we expect it can be employed for any isotropic plasmonic particles in the quasistatic regime. It captures individual NC optical properties and their contributions to the ensemble spectra thereby enabling the analysis of intrinsic NC properties from an ensemble measurement. Quality factors for the average NC in each ensemble are quantified and found to be notably higher than those of the ensemble. Carrier mobility and conductivity derived from HEDA fits matches that measured in the bulk thin film literature.
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Submitted 25 September, 2020; v1 submitted 25 December, 2018;
originally announced December 2018.
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Tuning Nanocrystal Surface Depletion by Controlling Dopant Distribution as a Route Toward Enhanced Film Conductivity
Authors:
Corey M. Staller,
Zachary L. Robinson,
Ankit Agrawal,
Stephen L. Gibbs,
Benjamin L. Greenberg,
Sebastien D. Lounis,
Uwe R. Kortshagen,
Delia J. Milliron
Abstract:
Electron conduction through bare metal oxide nanocrystal (NC) films is hindered by surface depletion regions resulting from the presence of surface states. We control the radial dopant distribution in tin-doped indium oxide (ITO) NCs as a means to manipulate the NC depletion width. We find in films of ITO NCs of equal overall dopant concentration that those with dopant-enriched surfaces show decre…
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Electron conduction through bare metal oxide nanocrystal (NC) films is hindered by surface depletion regions resulting from the presence of surface states. We control the radial dopant distribution in tin-doped indium oxide (ITO) NCs as a means to manipulate the NC depletion width. We find in films of ITO NCs of equal overall dopant concentration that those with dopant-enriched surfaces show decreased depletion width and increased conductivity. Variable temperature conductivity data shows electron localization length increases and associated depletion width decreases monotonically with increased density of dopants near the NC surface. We calculate band profiles for NCs of differing radial dopant distributions and, in agreement with variable temperature conductivity fits, find NCs with dopant-enriched surfaces have narrower depletion widths and longer localization lengths than those with dopant-enriched cores. Following amelioration of NC surface depletion by atomic layer deposition of alumina, all films of equal overall dopant concentration have similar conductivity. Variable temperature conductivity measurements on alumina-capped films indicate all films behave as granular metals. Herein, we conclude that dopant-enriched surfaces decrease the near-surface depletion region, which directly increases the electron localization length and conductivity of NC films.
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Submitted 2 January, 2018;
originally announced January 2018.
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Impacts of Surface Depletion on the Plasmonic Properties of Doped Semiconductor Nanocrystals
Authors:
Omid Zandi,
Ankit Agrawal,
Alex B. Shearer,
Lauren C. Gilbert,
Clayton J. Dahlman,
Corey M. Staller,
Delia J. Milliron
Abstract:
Degenerately doped semiconductor nanocrystals (NCs) exhibit a localized surface plasmon resonance (LSPR) in the infrared range of the electromagnetic spectrum. Unlike metals, semiconductor NCs offer tunable LSPR characteristics enabled by doping, or via electrochemical or photochemical charging. Tuning plasmonic properties through carrier density modulation suggests potential applications in smart…
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Degenerately doped semiconductor nanocrystals (NCs) exhibit a localized surface plasmon resonance (LSPR) in the infrared range of the electromagnetic spectrum. Unlike metals, semiconductor NCs offer tunable LSPR characteristics enabled by doping, or via electrochemical or photochemical charging. Tuning plasmonic properties through carrier density modulation suggests potential applications in smart optoelectronics, catalysis, and sensing. Here, we elucidate fundamental aspects of LSPR modulation through dynamic carrier density tuning in Sn-doped Indium Oxide NCs. Monodisperse Sn-doped Indium Oxide NCs with various doping level and sizes were synthesized and assembled in uniform films. NC films were then charged in an in situ electrochemical cell and the LSPR modulation spectra were monitored. Based on spectral shifts and intensity modulation of the LSPR, combined with optical modeling, it was found that often-neglected semiconductor properties, specifically band structure modification due to doping and surface states, strongly affect LSPR modulation. Fermi level pinning by surface defect states creates a surface depletion layer that alters the LSPR properties; it determines the extent of LSPR frequency modulation, diminishes the expected near field enhancement, and strongly reduces sensitivity of the LSPR to the surroundings.
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Submitted 2 January, 2018; v1 submitted 20 September, 2017;
originally announced September 2017.