Showing 1–1 of 1 results for author: Stass, I

Graphene Growth by Metal Etching on Ru(0001)

Authors: E. Loginova, S. Maier, I. Stass, N. C. Bartelt, P. J. Feibelman, M. Salmeron, K. F. McCarty

Abstract: Low-energy electron microscopy (LEEM) reveals a new mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density functional calculations, we propose a model wherein injected Ru atoms form metastable islands under the graphene. Scanning tunneling microscopy (STM) reveals that dislocation networks exist near step ed… ▽ More Low-energy electron microscopy (LEEM) reveals a new mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density functional calculations, we propose a model wherein injected Ru atoms form metastable islands under the graphene. Scanning tunneling microscopy (STM) reveals that dislocation networks exist near step edges, consistent with some of the injected atoms being incorporated into the topmost Ru layer, thereby increasing its density. △ Less

Submitted 26 January, 2010; originally announced January 2010.

Comments: 20 pages. 9 figures

Journal ref: Physical Review B Volume: 80 Issue: 23 Article Number: 235422 Published: DEC 2009